JP2008291320A - Vapor deposition system and vapor deposition method, and method for producing display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To swiftly perform control to an objective film deposition rate by all evaporation sources in a vapor deposition technique for evaporating vapor deposition materials from a plurality of evaporation sources. <P>SOLUTION: A vapor deposition system is provided with: a plurality of pods P1 to P3 storing vapor deposition materials M; and a plurality of temperature control parts 11 to 13 respectively controlling the coating film thickness of the vapor deposition materials M evaporated from the plurality of pods P1 to P3. Upon the temperature control of one pod by one temperature control part among the plurality of temperature control parts 11 to 13, temperature control reflecting the degree of influence to the region in charge of one pod for the vapor deposition materials evaporated from the other pods is performed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method for performing film formation by performing temperature control of a plurality of evaporation sources to evaporate a vapor deposition material.

  Vapor deposition, which is a technique for forming a predetermined material on a substrate, is a method in which the vapor deposition material is heated to evaporate, and the vapor deposition material is uniformly attached to the opposing substrate. In recent years, it has been used for forming various thin films in the manufacture of organic EL display devices, and a technique for forming a uniform thin film with a large area is desired. Here, Patent Documents 1 to 3 can be cited as techniques for performing vapor deposition on a wide region.

JP 2003-297570 A JP 2003-317957 A JP 2004-232090 A

  However, in the apparatus and method for performing vapor deposition using a plurality of vapor deposition sources, although individual temperature control for each vapor deposition source is performed, the conventional technology does not perform temperature control considering the influence on other vapor deposition sources. First, when feedback control is performed on the deposition rate for each evaporation source, there is a problem that it takes a long time until the rate balance of all the evaporation sources is achieved.

  The present invention has been made to solve such problems. That is, the present invention includes a plurality of evaporation sources that store the evaporation material, and a plurality of temperature control means that respectively control the deposition thickness of the evaporation material that evaporates from the plurality of evaporation sources, depending on the temperature. When performing temperature control of one evaporation source by one temperature control means among the temperature control means, vapor deposition that performs temperature control reflecting the degree of influence of the evaporation material evaporated from the other evaporation source on the area in charge of the evaporation source. Device.

  In the present invention, in performing temperature control of one evaporation source, temperature control reflecting the degree of influence of a vapor deposition material evaporated from another evaporation source on a region in charge of one evaporation source is performed. It is possible to realize temperature control in consideration of the amount of vapor deposition material scattered from other evaporation sources in the area in charge of the evaporation source.

  That is, in a vapor deposition apparatus provided with a plurality of evaporation sources, vapor deposition materials are scattered not only from the vapor deposition source but also from other vapor deposition sources in the area in which each vapor deposition source takes charge. In the present invention, in consideration of such scattering of the vapor deposition material from other vapor deposition sources, it becomes possible to control the degree of influence in advance while canceling out.

  In the present invention, the control temperature is determined by a calculation using a predetermined coefficient as the degree of influence of the vapor deposition material evaporated from another evaporation source. This coefficient is a value corresponding to the distance between one evaporation source and another evaporation source. One temperature control means determines the set temperature by subtracting the vapor deposition film thickness of the evaporation material obtained from the relationship between this coefficient and the temperature of another evaporation source.

  More specifically, the present invention includes: an evaporation source that stores the vapor deposition material; a film thickness detection unit that detects the film thickness of the vapor deposition material that is deposited from the evaporation source to the assigned region; and a film that is detected by the film thickness detection unit A vapor deposition apparatus including a plurality of vapor deposition units including a temperature control unit that feedback-controls the temperature of the evaporation source according to the thickness. As a temperature control in the temperature control unit in one vapor deposition unit among the plurality of vapor deposition units, The temperature control reflects the degree of influence of the vapor deposition material that the vapor deposition unit gives to the area in charge of one vapor deposition unit.

  In addition, the present invention is a vapor deposition method in which the temperature of a plurality of evaporation sources that store vapor deposition materials is controlled to evaporate the vapor deposition material from each evaporation source, and the temperature control of one evaporation source among the plurality of evaporation sources is performed. In doing so, temperature control is performed that reflects the degree of influence of a vapor deposition material that evaporates from another evaporation source on the area in charge of the evaporation source.

  In the present invention, in performing temperature control of one evaporation source, temperature control reflecting the degree of influence of a vapor deposition material evaporated from another evaporation source on a region in charge of one evaporation source is performed. It is possible to perform temperature control in consideration of the amount of vapor deposition material scattered from other evaporation sources in the area in charge of the evaporation source.

  In particular, in the present invention, the degree of influence of a vapor deposition material evaporated from another evaporation source on the area in charge of one evaporation source is taken in as a predetermined coefficient in advance, and the set temperature of one evaporation source is calculated by using this coefficient. Is a way to determine. As a result, the degree of influence due to the scattering of the vapor deposition material from another vapor deposition source is calculated by the coefficient taken in advance, and can be controlled while canceling the degree of influence in advance.

  According to another aspect of the present invention, there is provided a method of manufacturing a display device including a step of forming a vapor deposition film by controlling the temperatures of a plurality of evaporation sources that store vapor deposition materials, evaporating the vapor deposition materials from the respective evaporation sources, and In the temperature control of one evaporation source among the evaporation sources, this is also a method of manufacturing a display device that performs temperature control reflecting the degree of influence of the evaporation material evaporated from the other evaporation sources on the area in charge of one evaporation source.

  In the present invention, in performing temperature control of one evaporation source, temperature control reflecting the degree of influence of a vapor deposition material evaporated from another evaporation source on a region in charge of one evaporation source is performed. The vapor deposition film can be formed by controlling the temperature in consideration of the amount of the vapor deposition material scattered from other evaporation sources in the area in charge of the evaporation source.

  Therefore, the present invention has the following effects. That is, in the vapor deposition technique in which the vapor deposition material is evaporated from a plurality of evaporation sources, it becomes possible to quickly converge the control to the target film formation rate by all the evaporation sources.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram for explaining a vapor deposition apparatus according to the present embodiment. That is, the vapor deposition apparatus according to the present embodiment controls the pods P1 to P3, which are a plurality of evaporation sources that store the vapor deposition material M, and the deposition thickness of the vapor deposition material that evaporates from the plurality of pods P1 to P3, depending on the temperature. And a plurality of temperature control units 11 to 13.

  In the present embodiment, the pods P1 to P3 are provided with the left, center, and right three along the vapor deposition width direction (longitudinal direction of the nozzle 30), and the temperature control unit 11 corresponds to each pod P1 to P3. The vapor deposition apparatus provided with ˜13 is taken as an example.

  Corresponding to each of the pods P1 to P3, film thickness detectors S1 to S3 for detecting the deposited film thickness in the area in charge of vapor deposition of the pods P1 to P3 are provided. Here, one vapor deposition unit is configured by one pod, a temperature detector corresponding to the pod, and a temperature control unit. In this embodiment, three vapor deposition units are provided.

  The vapor deposition material M is mainly an organic material, and is a vapor deposition apparatus suitable for manufacturing an organic EL (Electro Luminescence) display device.

  The pods P1 to P3 are containers made of metal such as stainless steel, and can store a predetermined amount of the vapor deposition material M therein. The pods P <b> 1 to P <b> 3 are detachably attached to replenish the vapor deposition material M. In the pods P1 to P3, a heater for heating the vapor deposition material M to a predetermined temperature is provided, and a temperature detector for measuring the temperature of the vapor deposition material M is also provided.

  Outflow ports at the upper part of the pods P1 to P3 in the drawing are connected to a nozzle N extending in the width direction of vapor deposition. Dispersion plates are disposed in the vicinity of the outlets of the pods P1 to P3 inside the nozzle N and serve to diffuse the flow of the vapor deposition material M scattered from the outlet. Thereby, it is possible to prevent the vapor deposition material M from being deposited in large amounts at specific locations in the scattering direction and to form a uniform film.

  Thickness detectors S1 to S3 for detecting a deposited film thickness in a region (responsible region) where each pod P1 to P3 is responsible for vapor deposition are arranged at positions facing the vapor deposition direction from the nozzle N. In the present embodiment, the Lch film thickness detector S1 that measures the deposited film thickness in the assigned area (L assigned area) of the left pod P1, and the deposited film in the assigned area (C assigned area) of the central pod P2. There are provided a Cch film thickness detector S2 for measuring the thickness and an Rch film thickness detector S3 for measuring the deposited film thickness in the area (R area in charge) of the right pod P3.

  In each of the film thickness detectors S1 to S3, the detected value of the deposited film thickness of the vapor deposition material M measured for each assigned region is sent to the control system 10. The control system 10 is provided with three temperature controllers 11 to 13 that control the temperatures of the pods P1 to P3, respectively. The temperature control units 11 to 13 control the power supplied to the heaters of the pods P1 to P3 by converting the deposition amount into the temperatures of the pods P1 to P3 in order to feedback control the deposition amount based on the detected value of the film thickness. is doing.

  Here, the vapor deposition rate in a vapor deposition apparatus provided with several pods P1-P3 like this embodiment is demonstrated. The graph described on the upper side of the nozzle N shown in FIG. 1 shows the deposition rate corresponding to each pod and the overall deposition rate. The deposition rate corresponding to the left pod P1 is PF-L, the deposition rate corresponding to the center pod P2 is PF-C, the deposition rate corresponding to the right pod P3 is PF-R, and the overall deposition rate is PF-ALL. It is.

  For example, in the vapor deposition rate PF-L corresponding to the left pod P1, the front portion of the left pod P1 has the highest rate, and the rate decreases toward the right side. Moreover, in the vapor deposition rate PF-C corresponding to the center pod P2, the front portion of the center pod P2 has the highest rate, and the rate decreases toward the left and right sides. Furthermore, in the vapor deposition rate PF-R corresponding to the right pod P3, the front portion of the right pod P3 has the highest rate, and the rate decreases toward the left side.

  The overall deposition rate PF-ALL is a combination of the deposition rates PF-L, PF-C, and PF-R corresponding to the pods P1 to P3, and the deposition rate PF-L corresponding to the pods P1 to P3. Although the uniformity is higher than those of PF-C and PF-R, the rates of the front positions of the pods P1 to P3 are slightly higher.

  The overall deposition rate PF-ALL is determined by the synthesis of the deposition rates PF-L, PF-C, and PF-R corresponding to the pods P1 to P3. It can be seen that the deposition rate from other pods also contributes to the area that P3 is responsible for. For example, in the L charge area, which is the charge area of the left pod P1, the contribution of the deposition rate by the left pod P1 is the highest, but the contribution of the deposition rate by the center pod P2 is the second highest, and then the right The contribution of the deposition rate by the pod P3 is also included.

  Further, in the C charge area, which is the charge area of the central pod P2, the contribution of the deposition rate by the central pod P2 is the highest, and the contribution of the deposition rate by the left pod P1 and the right pod P3 is the same. include.

  In the R charge area, which is the charge area of the right pod P3, the contribution of the deposition rate by the right pod P3 is the highest, but the contribution of the deposition rate by the center pod P2 is the second highest, and then the left The contribution of the deposition rate by the pod P1 is also included.

  Thus, in each charge area in each of the pods P1 to P3, the deposition rate corresponding to the distance also contributes from the pod other than its own pod. Even if it changes, it will affect the area in charge of other pods, and this causes a long time to stabilize the overall deposition rate PF-ALL.

  Here, ideally, it is desirable that the entire deposition rate PF-ALL is uniform. However, since the heights of the front positions of the pods P1 to P3 are the same, sufficient film thickness uniformity can be obtained. Obtainable. In view of this, the present embodiment is characterized by control for quickly aligning the rates of the front positions of the pods P1 to P3.

  Next, the vapor deposition method according to the present embodiment will be specifically described. FIG. 2 is a schematic diagram illustrating control parameters used in the vapor deposition method according to the present embodiment, and FIG. 3 is a block diagram illustrating the configuration of each temperature control unit of the control system.

  In the vapor deposition method according to the present embodiment, when controlling the temperature of one pod among the plurality of pods P1 to P3, the area in charge of one pod of the vapor deposition material evaporated from another pod (at least one pod) The temperature control reflecting the degree of influence on is performed.

  The degree of influence of this one pod on the assigned area is obtained in advance as a coefficient, and calculation using this coefficient is performed when temperature control is performed.

  The arrows and symbols (af) described at the upper side of the nozzle N shown in FIG. 2 are coefficients indicating the degree of influence of each pod on the assigned area of the other pod. That is, the symbol a indicates the degree of influence of the pod P1 on the area in charge of the pod P2, the symbol b indicates the degree of influence of the pod P1 on the area in charge of the pod P3, and the symbol c indicates the degree of influence of the pod P2 on the area in charge of the pod P1. The degree of influence, d is the degree of influence of the pod P2 on the area in charge of the pod P3, the letter e is the degree of influence of the pod P3 in the area of charge of the pod P1, and the sign f is the area where the pod P3 is in charge of the pod P2. The degree of influence is shown.

  A temperature detector (circled in the figure) provided in each pod P1 to P3 detects the temperature, L temperature, C temperature, and R temperature of each pod P1 to P3 and sends it to the control system 10. Further, the deposition film thickness of the vapor deposition material in the assigned area corresponding to each pod P1 to P3 is detected by the film thickness detectors S1 to S3 and sent to the control system 10 as the Lch film thickness, Cch film thickness, and Rch film thickness. . The control system 10 performs a predetermined calculation based on each input parameter, and outputs supply power (L heater power, C heater power, R heater power) to the heaters of the pods P1 to P3. When this calculation is performed, the coefficient (af) shown above is used, and the calculation reflecting the degree of influence of other pods is performed by temperature control of a certain pod.

  As shown in FIG. 3, the control system 10 is provided with temperature controllers 11 to 13 corresponding to the respective pods. The temperature control unit 11 corresponding to the left pod P1 has a rate PID 1110 for performing PID calculation using the rate command and the Lch film thickness (film thickness detection value in the film thickness detector S1) as an actual rate, Using a calculation unit 1120 that performs a temperature conversion calculation using coefficients (c, e) of the degree of influence of the pods P2 and P3, and a temperature command and an actual temperature L temperature (temperature detection value at the temperature detector) are used. And a power amplifier 1140 that outputs power to the heater (L heater power) based on the temperature calculation value.

  Further, the temperature control unit 12 corresponding to the central pod P2 has a rate PID 1210 for performing PID calculation using a rate command and a Cch film thickness (film thickness detection value in the film thickness detector S2) which is an actual rate, A calculation unit 1220 that performs a temperature conversion calculation using coefficients (a, f) of the degree of influence of the other pods P1 and P3, a temperature command and a C temperature that is an actual temperature (temperature detection value at the temperature detector) And a power amplifier 1240 that outputs power to the heater (C heater power) based on the temperature calculation value.

  Further, the temperature control unit 13 corresponding to the right pod P3 has a rate PID 1310 for performing PID calculation using the rate command and the Rch film thickness (film thickness detection value in the film thickness detector S3) which is an actual rate, A calculation unit 1320 that performs a temperature conversion calculation using coefficients (b, d) of the influence degree of the other pods P1 and P2, a temperature command and an R temperature that is an actual temperature (a temperature detection value at a temperature detector) And a power amplifier 1340 that outputs power to the heater (R heater power) based on the temperature calculation value.

  Each temperature control part 11-13 which consists of the said structure calculates | requires the temperature command for control by the following calculations using various input parameters. That is, a temperature command is output by performing the following processing on the rate PID output.

Temperature command Tl = Ratel (PID calculation result) −Tc × c−Tr × e for the left pod P1
Temperature command Tc = Ratec (PID calculation result) −Tl × a−Tr × f for the center pod P2
Temperature command Tr = Rater (PID calculation result) −Tl × b−Tc × d for the right pod P3

  By the above calculation, it is possible to issue a temperature command that cancels in advance the effects of vapor deposition by other pods.

  Next, a method for determining a coefficient indicating the degree of influence of each pod on other pods will be described.

  First, in a state where the deposition rates of all the pods P1 to P3 are aligned, only the left pod P1 is heated (ΔTl), and the deposition rate changes ΔRatel, ΔRatec, and ΔRator of each pod P1 to P3 are filmed in a stable state. Measure with thickness detectors S1-S3.

Next, the deposition rate is converted into a temperature change by the following conversion formula.
ΔRate = 2 ^{(ΔTl / 10)}
ΔRatec = 2 ^{(ΔTc / 10)}
ΔRate = 2 ^{(ΔTr / 10)}

Then, the coefficients a and b are calculated by the following formula from the above conversion formula.
a = ΔTc / ΔTl = ln (ΔRatec) / ln (ΔRatel)
b = ΔTr / ΔTl = ln (ΔRater) / ln (ΔRatel)

  Similarly, when the deposition rates of all the pods P1 to P3 are uniform, only the central pod P2 is heated (ΔTc), and the deposition rate changes ΔRatel, ΔRatec of each pod P1 to P3 in a stable state. ΔRator is measured by film thickness detectors S1 to S3.

Then, the coefficients c and d are calculated by the following formula from the above conversion formula.
c = ΔTl / ΔTc = ln (ΔRatel) / ln (ΔRatec)
d = ΔTr / ΔTc = ln (ΔRater) / ln (ΔRatec)

  Similarly, when the deposition rates of all the pods P1 to P3 are uniform, only the right pod P3 is heated (ΔTr), and the deposition rate changes ΔRatel, ΔRatec of each pod P1 to P3 in a stable state. ΔRator is measured by film thickness detectors S1 to S3.

Then, the coefficients e and f are calculated by the following formula from the above conversion formula.
e = ΔTl / ΔTr = ln (ΔRatel) / ln (ΔRater)
f = ΔTc / ΔTr = ln (ΔRatec) / ln (ΔRater)

  The coefficients a to f are obtained in advance by the above calculation, and the temperature controllers 11 to 13 determine the control temperatures of the pods P1 to P3 using necessary coefficients. As a result, in independent pod temperature control, temperature control reflecting not only the deposition rate by the pod but also the degree of influence of the deposition rate by other pods can be realized, and excessive overshoot of feedback control is suppressed. It becomes possible to quickly stabilize the entire deposition rate.

  In determining the coefficients a to f, the vapor deposition rate is converted into a temperature change using the above conversion formula. This conversion formula is a vapor deposition material, a temperature range, a vapor deposition distance (a distance from the nozzle to the vapor deposition object). ), And is not limited to the above conversion formula.

  Further, in the present embodiment, an example of a vapor deposition apparatus using three pods P1 to P3 has been described, but the same applies to a vapor deposition apparatus including two or more pods. At this time, even if the coefficient is set to reflect the degree of influence of all other pods by controlling the deposition rate with one pod, only the degree of influence of some of the other pods is reflected. A coefficient may be set.

  According to the present embodiment, the following effects can be obtained. That is, it is possible to improve the speed until all the pods converge to the target rate. Thereby, the unstable period of the vapor deposition rate can be shortened, and the waste of the material used can be saved correspondingly, and as a result, the productivity can be improved. Also, even if the rate of any pod is disturbed, the degree of influence on the in-plane distribution during film formation can be reduced, and the uniformity of the film thickness can be improved.

  In addition, by applying the vapor deposition apparatus and the vapor deposition method of the present embodiment, it is possible to increase the area and improve the quality in manufacturing an organic EL display device that requires a particularly uniform film formation.

<Manufacturing method of display device>
Next, as a vapor deposition method and a display device manufacturing method using the vapor deposition apparatus having the above-described configuration, a description will be given of the manufacture of a display device in which a plurality of organic electroluminescent elements are formed on a substrate. FIG. 4 is a schematic cross-sectional view of three pixels in the display device manufactured here.

  As shown in FIG. 4, first, for example, an anode 21 is formed as a lower electrode on an apparatus substrate W made of a glass substrate or the like. The anode 21 is patterned for each pixel, for example, and is connected to each pixel circuit having a thin film transistor not shown here. Next, an insulating pattern 22 is formed so as to cover the peripheral edge of the anode 21, and pixel separation is performed. The pixel circuit will be described in detail later.

  Thereafter, by applying the film forming method using the above-described vapor deposition apparatus, for example, the hole injection layer 23 and the hole transport layer 24 are vapor deposited in this order as an organic layer (vapor deposited film) common to all pixels. To do. In this case, in order from the upper side of the transport direction y of the substrate W, an evaporation source filled with a hole injection material for forming the hole injection layer 23 as an evaporation material and a hole transport layer 24 are formed. A vapor deposition source filled with a hole transport material as a vapor deposition material is disposed. Thereby, the hole injection layer 23 and the hole transport layer 24 are continuously formed by vapor deposition. The vapor deposition film formation of the hole injection layer 23 and the hole transport layer 24 may be performed individually using a vapor deposition film forming apparatus in which only one vapor deposition source is provided.

  Next, a red light emitting layer 25r, a green light emitting layer 25g, and a blue light emitting layer 25b are pattern-formed on each pixel on the hole transport layer 24 by applying a film forming method using the above-described vapor deposition film forming apparatus. . In this case, a metal mask having, for example, a portion where the red light emitting layer 25r is formed is disposed between the substrate W on which the hole transport layer 24 is formed and the evaporation source. Then, vapor deposition is performed by integrally transporting the substrate W and the metal mask in the transport direction y above the vapor deposition source filled with the red light emitting material for depositing the red light emitting layer 25r as the vapor deposition material. The pattern formation of the green light emitting layer 25g and the blue light emitting layer 25b is sequentially performed in the same manner.

  After that, by applying a film forming method using the above-described vapor deposition apparatus, for example, the electron transport layer 26 is vapor deposited as an organic layer (vapor deposited film) common to all pixels.

  After the above, a cathode 27 using a transparent conductive material is sputter-deposited on the electron transport layer 26 as an upper electrode common to all pixels.

  As a result, organic electroluminescent elements of the respective colors formed by sandwiching the organic layer (deposited film) from the hole injection layer 23 to the electron transport layer 26 between the anode 21 and the cathode 27, that is, the red light emitting element 31r, the green color. The light emitting element 31g and the blue light emitting element 31b are obtained. Although illustration is omitted here, a sealing film covering each of the organic electroluminescent elements 31r, 31g, and 31b is further formed, and a sealing substrate made of a light-transmitting material is bonded through an adhesive. As a result, the active matrix display device 33 in which the light emission of the organic electroluminescent elements 31r, 31g, and 31b of each color is controlled by each pixel circuit connected to each anode 21 is completed. In the display device 33, the emitted light generated by the organic electroluminescent elements 31r, 31g, and 31b is extracted from the sealing substrate side through the cathode 27 made of a light transmissive material.

  According to the embodiment described above, it is possible to improve the speed until all the pods converge to the target rate, and it is possible to shorten the unstable period of the vapor deposition rate in the manufacture of the display device 33, and waste the material used accordingly. As a result, productivity can be improved. Also, even if the rate of any pod is disturbed, the degree of influence on the in-plane distribution during film formation can be reduced, and the uniformity of the film thickness can be improved. In addition, according to the present embodiment, it is possible to increase the area and improve the quality in manufacturing an organic EL display device that requires a particularly uniform film formation.

<Schematic configuration of display device>
FIGS. 5A and 5B are diagrams showing an example of the entire configuration of the display device 33 manufactured according to the above embodiment. FIG. 5A is a schematic configuration diagram, and FIG. 5B is a configuration diagram of a pixel circuit. Here, an example in which the present embodiment is applied to an active matrix display device will be described.

  As shown in FIG. 5A, a display region W-1 and its peripheral region W-2 are set on a substrate W which is a support substrate of the display device 33. The display area W-1 is configured as a pixel array section in which a plurality of scanning lines 41 and a plurality of signal lines 43 are wired vertically and horizontally, and one pixel a is provided corresponding to each intersection. Yes. Each of these pixels a is provided with one of the organic electroluminescent elements 31r, 31g, 31b shown in FIG. In the peripheral region W-2, a scanning line driving circuit b that scans and drives the scanning line 41 and a signal line driving circuit c that supplies a video signal (that is, an input signal) corresponding to luminance information to the signal line 43 are arranged. Has been.

  As shown in FIG. 5B, the pixel circuit provided in each pixel a includes, for example, any one of organic electroluminescent elements 31r, 31g, and 31b, a driving transistor Tr1, a writing transistor (sampling transistor) Tr2, and a holding circuit. It is comprised by the capacity | capacitance Cs. Then, the video signal written from the signal line 43 via the write transistor Tr2 is held in the holding capacitor Cs by driving by the scanning line driving circuit b, and a current corresponding to the held signal amount is sent from the drive transistor Tr1 to each organic transistor. The light is supplied to the electroluminescent elements 31r, 31g, and 31b, and the organic electroluminescent elements 31r, 31g, and 31b emit light with luminance according to the current value.

  Note that the configuration of the pixel circuit as described above is merely an example, and a capacitor element may be provided in the pixel circuit as necessary, or a plurality of transistors may be provided to configure the pixel circuit. Further, a necessary driving circuit is added to the peripheral area W-2 according to the change of the pixel circuit.

  The display device according to the present embodiment described above includes a module-shaped one having a sealed configuration as disclosed in FIG. For example, a sealing portion 51 is provided so as to surround the display area W-1 that is a pixel array portion, and this sealing portion 51 is used as an adhesive and is attached to a facing portion (sealing substrate 52) such as transparent glass. Applicable display module. The transparent sealing substrate 52 may be provided with a color filter, a protective film, a light shielding film, and the like. The substrate W as a display module in which the display area W-1 is formed is provided with a flexible printed circuit board 53 for inputting / outputting signals to / from the display area W-1 (pixel array unit) from the outside. May be.

<Application example>
The display device according to the present embodiment described above is input to various electronic devices shown in FIGS. 7 to 11 such as digital cameras, notebook personal computers, mobile terminal devices such as mobile phones, and video cameras. The video signal generated or the video signal generated in the electronic device can be applied to a display device of an electronic device in any field for displaying as an image or a video. Below, an example of the electronic device to which this embodiment is applied is demonstrated.

  FIG. 7 is a perspective view showing a television to which the present embodiment is applied. The television according to this application example includes a video display screen unit 101 including a front panel 102, a filter glass 103, and the like, and is created by using the display device according to the present embodiment as the video display screen unit 101.

  8A and 8B are diagrams showing a digital camera to which the present embodiment is applied, in which FIG. 8A is a perspective view seen from the front side, and FIG. 8B is a perspective view seen from the back side. The digital camera according to this application example includes a light emitting unit 111 for flash, a display unit 112, a menu switch 113, a shutter button 114, and the like, and is manufactured by using the display device according to the present embodiment as the display unit 112. .

  FIG. 9 is a perspective view showing a notebook personal computer to which the present embodiment is applied. A notebook personal computer according to this application example includes a main body 121 including a keyboard 122 that is operated when characters or the like are input, a display unit 123 that displays an image, and the like, and the display unit 123 includes a display device according to the present embodiment. It is produced by using.

  FIG. 10 is a perspective view showing a video camera to which the present embodiment is applied. The video camera according to this application example includes a main body 131, a subject shooting lens 132 on a side facing forward, a start / stop switch 133 at the time of shooting, a display unit 134, and the like. It is manufactured by using the display device according to the above.

  FIG. 11 is a diagram illustrating a mobile terminal device to which the present embodiment is applied, for example, a mobile phone, in which (A) is a front view in an opened state, (B) is a side view thereof, and (C) is closed. (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view. The mobile phone according to this application example includes an upper housing 141, a lower housing 142, a connecting portion (here, a hinge portion) 143, a display 144, a sub display 145, a picture light 146, a camera 147, and the like. In addition, the display device according to this embodiment is used as the sub display 145.

It is a schematic diagram explaining the vapor deposition apparatus which concerns on this embodiment. It is a schematic diagram which shows the control parameter used with the vapor deposition method which concerns on this embodiment. It is a block diagram explaining the structure of each temperature control part of a control system. It is a schematic diagram which shows the example of schematic structure of the display apparatus produced using the vapor deposition film-forming apparatus of this embodiment. It is a figure which shows an example of the circuit structure of the display apparatus of embodiment. It is a block diagram which shows the module-shaped display apparatus of the sealed structure to which this embodiment is applied. It is a perspective view which shows the television with which this embodiment is applied. It is a figure which shows the digital camera to which this embodiment is applied, (A) is the perspective view seen from the front side, (B) is the perspective view seen from the back side. It is a perspective view which shows the notebook type personal computer to which this embodiment is applied. It is a perspective view which shows the video camera to which this embodiment is applied. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the portable terminal device to which this embodiment is applied, for example, a mobile telephone, (A) is the front view in the open state, (B) is the side view, (C) is the front in the closed state (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Control system, 11-13 ... Temperature control part, P1-P3 ... Pod, S1-S3 ... Film thickness detection part

Claims (9)

A plurality of evaporation sources for storing vapor deposition materials;
A plurality of temperature control means for controlling the film thickness of the vapor deposition material evaporating from the plurality of evaporation sources, respectively, according to the temperature;
In performing temperature control of one evaporation source by one temperature control means among the plurality of temperature control means, the degree of influence of the evaporation material evaporated from another evaporation source on the area in charge of the one evaporation source is reflected. A vapor deposition apparatus characterized by performing temperature control. 2. The vapor deposition apparatus according to claim 1, wherein the one temperature control unit performs temperature control using a predetermined coefficient representing an influence degree of the vapor deposition material evaporated from the other evaporation source. The vapor deposition apparatus according to claim 2, wherein the predetermined coefficient is a value corresponding to a distance between the one evaporation source and the other evaporation source. The said one temperature control means determines preset temperature by the calculation which deducts the vapor deposition film thickness of the said evaporation material calculated | required from the relationship between the said predetermined coefficient and the temperature of the said other evaporation source. Vapor deposition equipment. An evaporation source for storing the vapor deposition material, a film thickness detection means for detecting the film thickness of the vapor deposition material deposited from the evaporation source to the area in charge, and the evaporation source according to the film thickness detected by the film thickness detection means. In a vapor deposition apparatus including a plurality of vapor deposition units including temperature control means for feedback control of temperature,
The temperature control means in one vapor deposition unit of the plurality of vapor deposition units performs temperature control that reflects the degree of influence of the vapor deposition material that other vapor deposition units have on the area in charge of the one vapor deposition unit. Vapor deposition equipment. The temperature control means in the one vapor deposition unit is predicted to be vapor-deposited from the vapor deposition source of the other vapor deposition unit to the area in charge of the one vapor deposition unit from the temperature detected by the temperature detection means of the other vapor deposition unit. The vapor deposition apparatus according to claim 5, wherein the set temperature is determined by an operation of subtracting a vapor deposition film thickness of the vapor deposition material. In a vapor deposition method for controlling the temperature of a plurality of evaporation sources containing vapor deposition materials and evaporating the vapor deposition materials from the respective evaporation sources,
In performing temperature control of one evaporation source among the plurality of evaporation sources, temperature control reflecting the degree of influence of the evaporation material evaporated from another evaporation source on the area in charge of the one evaporation source is performed. Vapor deposition method. The degree of influence of the vapor deposition material evaporating from the other evaporation source on the area in charge of the one evaporation source is taken in as a predetermined coefficient in advance, and the set temperature of the one evaporation source is determined by calculation using the coefficient. The vapor deposition method according to claim 7, wherein: In the method of manufacturing a display device, the method includes the steps of controlling the temperature of a plurality of evaporation sources that store the vapor deposition material, evaporating the vapor deposition material from each evaporation source, and forming a vapor deposition film.
In performing temperature control of one evaporation source among the plurality of evaporation sources, temperature control reflecting the degree of influence of the evaporation material evaporated from another evaporation source on the area in charge of the one evaporation source is performed. A method for manufacturing a display device.

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