JPH07331421A - Vacuum deposition device - Google Patents

Abstract

PURPOSE:To optimally control the discrete vapor-deposition materials in plural vaporization sources as well as the deposition of a single vaporization source. CONSTITUTION:The heating temp. of the vapor-deposition material 6 in a vaporization source 7 is controlled by a control part 5 based on the temp. measured by a non-contact radiation thermometer 9 to measure the vaporization temp. when the material 6 in the source 7 is heated, and the amt. of the vaporized material is controlled. Consequently, the material 6 is heated and vaporized at an optimum temp., the amt. of the vaporized material is stabilized, and the material is stably deposited on a substrate 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus for heating a vapor deposition substance in a vacuum to evaporate it and deposit it on an object to be vapor deposited such as a glass substrate.

[0002]

2. Description of the Related Art Conventionally, in a vacuum vapor deposition apparatus, the evaporation amount of a vapor deposition material deposited on an object to be vapor-deposited such as a glass substrate is variable, for example, in a resistance heating method, by changing the current value of a vapor deposition source for heating and vaporizing the vapor deposition material. The evaporation amount is controlled. The control of this evaporation amount is usually carried out by indirectly measuring the film thickness of the substance deposited on a film thickness measuring means such as a crystal oscillator, which is installed at an appropriate position in the vacuum chamber. Based on the above, the amount of evaporation was controlled by changing the current value of the vapor deposition source.

[0003]

However, the above-mentioned method of controlling the evaporation amount has the following drawbacks. That is, (1) when the position where the film thickness measuring means is mounted is different from the position of the glass substrate on which vapor deposition is actually performed,
The film formation on the glass substrate is different from the film formation based on the data of the measuring means. (2) In vapor deposition using two or more evaporation sources, it is difficult to accurately control the evaporation amount of each evaporation source. (3) When vapor deposition is performed by two or more vaporization sources, if the vaporization sources are controlled based on the data of the film thickness measuring means,
Deposition cannot be performed under optimum evaporation conditions for each deposition material, making stable deposition difficult. It has drawbacks such as

The present invention has been made in view of the above circumstances, and optimal evaporation control for individual vapor deposition substances is achieved not only by vapor deposition by a single evaporation source but also by vaporization by a plurality of evaporation sources. It is an object of the present invention to provide a vacuum vapor deposition apparatus that enables the above.

[0005]

In order to achieve the above-mentioned object, the present invention provides a vacuum vapor deposition apparatus for forming a vapor deposition film on an object to be vapor-deposited in a vacuum chamber, wherein the vapor deposition material is installed in the vacuum chamber. At least one evaporation source that variably heats and evaporates to form an evaporation film on the object to be evaporated, non-contact temperature measuring means for measuring the evaporation temperature of the evaporation material in the evaporation source, and this temperature And a control means for controlling a temperature for heating the vapor deposition material of the evaporation source based on a measurement temperature of the measurement means to control an evaporation amount.

Further, the vacuum vapor deposition apparatus of the present invention is characterized in that a plurality of evaporation sources are installed and a plurality of temperature measuring means are provided corresponding to the plurality of evaporation sources.

Further, the vacuum vapor deposition apparatus of the present invention is provided with a film thickness measuring means for measuring the film thickness of the vapor deposition material deposited near the object to be vapor-deposited, and the film thickness measuring means The control means controls the temperature for heating the evaporation material of the evaporation source to control the evaporation amount based on the measured temperature measured by the temperature measuring means.

[0008]

Since the present invention is configured as described above, the temperature at which the control means heats the vapor deposition material of the evaporation source is based on the temperature measured by the temperature measuring means for measuring the vaporization temperature when the vapor deposition material is heated by the vapor deposition source. And by controlling the evaporation amount,
The evaporation material is heated and evaporated at the optimum evaporation temperature, so that the evaporation amount can be stabilized and the deposition state of the substrate can be stabilized.

Further, in the present invention, since a plurality of temperature measuring means are provided corresponding to a plurality of evaporation sources, the heating temperature of each evaporation source is set to the optimum evaporation temperature of the evaporation substance, so that each evaporation source is It is possible to stabilize the amount of evaporation of the vapor deposition material due to and to stabilize the vapor deposition state of the substrate.

Further, according to the present invention, based on the film thickness measured by the film thickness measuring means and the measured temperature measured by the temperature measuring means, the control means controls the temperature at which the vapor deposition material of the evaporation source is heated to evaporate. Since the amount is controlled, it is possible to control the evaporation temperature of the evaporation material more precisely by controlling the heating temperature of the evaporation source in conjunction with the film thickness of the evaporated film to be formed. Can be more stable.

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a view showing the schematic arrangement of a vacuum vapor deposition apparatus according to an embodiment of the present invention.

In the figure, 1 has a diameter of 1200, for example.
Dome in which a substrate 2 such as a glass substrate to be deposited is mounted above the vacuum chamber 1 with a large vacuum chamber of mm or more.
The dome 3 is provided with a driving force from a dome rotation motor (not shown) outside the vacuum chamber 1 through an appropriate means such as a ring gear, and the dome 2 is guided to the guide rail 4. Being rotated. Dome rotation motor
For example, it is controlled by the control unit 5 which is composed of a computer and controls the operation of the entire vacuum vapor deposition apparatus, and the rotation cycle thereof is set.

Below the vacuum chamber 1, the evaporation material 6 evaporated on the substrate 2 mounted on the dome 3 is evaporated.
For example, a resistance heating type evaporation source 7 is installed. The evaporation source 7 is configured so that an electric signal for varying the current value when heating the vapor deposition material 6 is supplied from the control unit 5 via the cable 8 and the heating temperature for heating the vapor deposition material 6 is variable. ing.

A thermometer, for example, a radiation thermometer 9 is installed on the side wall of the vacuum chamber 1 to measure the evaporation temperature of the vapor deposition material 6 in the evaporation source 7. This radiation thermometer 9 receives the energy radiated from the surface of the vapor deposition material 6 in the light-energy conversion means 9a, and the temperature detection unit 9b detects the surface temperature of the vapor deposition material 6 based on the output of the light-energy conversion means 9a. By detecting, the evaporation temperature of the vapor deposition material 6 is measured. In this way, the temperature data S1 indicating the monitoring state of the evaporation temperature of the vapor deposition material 6 measured by the radiation thermometer 9 is transmitted and input to the temperature controller (not shown) which constitutes the control unit 5. In order to maintain the evaporation temperature of the vapor deposition material 6 at a constant temperature, the control unit 5 sends a control signal for controlling the temperature at which the vapor deposition material 6 is heated to the vaporization source 7 to the cable 8 based on the input temperature data S1. Output through.

By the way, the thermometer for measuring the evaporation temperature of the vapor deposition substance 6 is preferably a non-contact type thermometer such as the radiation thermometer 9 applied in this embodiment. The reason is vapor deposition material
Since 6 is heated by the evaporation source 7 and evaporates, when a contact type thermometer is applied, the contact part of the thermometer melts and mixes into the vapor deposition substance 6, and the vapor deposition film formed on the substrate 2 This is because it will adversely affect. In short, the thermometer may be anything that can detect the temperature in a non-contact manner.In addition to the radiation thermometer 9, for example, the electromagnetic wave radiated from the object to be heated is detected by an infrared detector and the surface of the object to be heated is detected. You may make it apply the thermography which detects the temperature of.

Further, a film thickness meter, for example, a crystal oscillator type film thickness monitoring device 10 is installed in the central portion of the ceiling of the vacuum chamber 1 in order to detect and monitor the film thickness of the deposited film deposited on the substrate 2. ing. This crystal oscillator type film thickness monitoring device 10 is installed in the vicinity of the curved surface of the dome 3, that is, in the vicinity of the substrate 2 mounted on the dome 3, and is composed of a crystal oscillator to which a vapor deposition film similar to the substrate 2 is attached. It consists of a quartz film thickness sensor 10a and a quartz film thickness meter 10b that reads the thickness of the deposited film attached to this quartz film thickness sensor 10a as a change in the frequency of the quartz resonator. The thickness is regarded as the thickness of the vapor deposition film attached to the crystal film thickness sensor 10a, the crystal film thickness meter 10b detects the film thickness formed on the substrate 2, and the film thickness data S2 detected by the crystal film thickness meter 10b is detected. Is transmitted and input to a film thickness controller (not shown) that constitutes the control unit 5, similarly to the temperature data measured by the radiation thermometer 9. The control unit 5 controls the temperature at which the vapor deposition material 6 is heated by the evaporation source 7 based on the input film thickness data S2 for controlling the vapor deposition rate for controlling the film thickness formed on the substrate 2. The signal is output via cable 8.

In this embodiment, the crystal oscillator type film thickness monitoring device 10 was applied as the film thickness meter, but instead of the crystal oscillator type film thickness monitoring device 10, the thickness of the vapor deposition film attached to the monitor glass It is also possible to apply an optical film thickness meter that optically reads.

Next, the operation of the present invention having the above construction will be described.

First, as a preparation for film formation on the substrate 2, a predetermined number of substrates 2 are mounted on the dome 3 and the evaporation material 6 is set on the evaporation source 7.

After the preparation is completed, the temperature for heating the vapor deposition material 6 is a preset constant temperature, for example, the vaporization material 6
A control signal is output from the control unit 5 to the evaporation source 7 so that the optimum evaporation temperature is obtained, and the evaporation source 7 heats the vapor deposition material 6 with a current value according to the control signal. Deposition material 6 by evaporation source 7
When heating is started, the vapor deposition material 6 is vaporized, and the vapor deposition film adheres to the surfaces of the substrate 2 and the crystal film thickness sensor 10a facing the evaporation source 7 side.

On the other hand, the radiation thermometer 9 detects the surface temperature of the vapor deposition material 6 to measure the evaporation temperature, and sends the measured temperature data S1 to the control unit 5. The control unit 5 outputs a control signal for controlling the temperature for heating the vapor deposition material 6 to the evaporation source 7 based on the input temperature data S1, and maintains the vaporization temperature of the vapor deposition material 6 at the optimum vaporization temperature.

Further, the crystal oscillator type film thickness monitoring device 10 has a film thickness of the vapor deposition film attached to the crystal film thickness sensor 10a, that is, the substrate 2
The film thickness data S2 corresponding to the film thickness of the vapor deposition film attached to is transmitted to the control unit 5. The control unit 5 controls the input film thickness data S2
Based on the above, a control signal for controlling the temperature for heating the vapor deposition material 6 is output to the evaporation source 7 to control the vapor deposition rate of the film thickness formed on the substrate 2. Then, when the thickness of the vapor deposition film attached to the substrate 2 reaches a predetermined thickness, the control unit 5 outputs a control signal to the evaporation unit 7 to stop the heating of the vapor deposition substance 6, and the vapor deposition substance 6 on the substrate 2 is controlled. Stop the vapor deposition of.

As described above, according to the embodiment of the present invention, the radiation thermometer 9 detects the surface temperature of the vapor deposition material 6 and measures the vaporization temperature to heat the vapor deposition material 6 at the optimum vaporization temperature. This makes it possible to stabilize the evaporation amount of the vapor deposition material 6 and stabilize the vapor deposition state of the substrate 2.

Further, the temperature data S1 input by the control unit 5
By controlling the temperature for heating the vapor deposition material 6 based on the above, it is possible to shorten the time for raising the vapor deposition material 6 to the optimum evaporation temperature of a constant temperature.

Further, in conjunction with the measurement of the evaporation temperature of the vapor deposition material 6 by the radiation thermometer 9, a crystal oscillator type film thickness monitoring device 10
By measuring the film thickness formed on the substrate 2 by means of the method described above, the evaporation amount of the evaporation material can be controlled more precisely, and the evaporation state of the evaporation film can be further stabilized.

Although the present invention uses a single evaporation source 7 and a single radiation thermometer 9 in the above embodiment, the present invention is not limited to this, and a plurality of evaporation sources 7 are installed and these Evaporation source 7
A radiation thermometer 9 may be provided for each of the above, and by configuring in this way, the heating temperature of each evaporation source 7 is set to the optimum evaporation temperature of the evaporation material, It is possible to stabilize the evaporation amount of the vapor deposition material 6 and stabilize the vapor deposition state of the substrate 7.

Further, in the above-mentioned embodiment, according to the present invention, the evaporation temperature of the vapor deposition material 6 is measured by the radiation thermometer 9 and the film thickness formed on the substrate 2 by the crystal oscillator type film thickness monitoring device 10. Although the heating temperature of the evaporation material 6 by the evaporation source 7 is controlled in conjunction with this, the evaporation temperature of the evaporation material 6 may be measured by the radiation thermometer 9 alone, and only the evaporation temperature is measured. Even if you control the heating temperature with
It is possible to sufficiently stabilize the evaporation amount of the vapor deposition material 6 by the evaporation source 7.

Further, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.

[0030]

As described in detail above, according to the vacuum vapor deposition apparatus of the present invention, the control means evaporates based on the measured temperature of the temperature measuring means for measuring the evaporation temperature when the vapor deposition material is heated by the vapor deposition source. By controlling the heating temperature of the source evaporation material and controlling the evaporation amount, the evaporation material is heated and evaporated at the optimum evaporation temperature, and it is possible to stabilize the evaporation amount and stabilize the evaporation state of the substrate. Can be planned.

Further, according to the present invention, since a plurality of temperature measuring means are provided corresponding to a plurality of evaporation sources, the heating temperature of each evaporation source is set to the optimum evaporation temperature of the evaporation substance, so that each evaporation source is set. It is possible to stabilize the amount of evaporation of the vapor deposition material due to and to stabilize the vapor deposition state of the substrate.

Further, according to the present invention, the control means controls the temperature for heating the vapor deposition material of the evaporation source on the basis of the film thickness measured by the film thickness measuring means and the measured temperature measured by the temperature measuring means. Since the amount is controlled, it is possible to control the evaporation temperature of the evaporation material more precisely by controlling the heating temperature of the evaporation source in conjunction with the film thickness of the evaporated film to be formed. Can be more stable.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a vacuum vapor deposition apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 1 ... Vacuum chamber 2 ... Substrate (deposition object) 5 ... Control unit (control means) 6 ... Evaporation material 7 ... Evaporation source 9 ... Radiation thermometer (temperature measurement means) 10 ... Quartz crystal type film thickness monitoring device (film Thickness measuring means)

Claims (3)

[Claims] 1. A vacuum vapor deposition apparatus for depositing a vapor deposition film on an object to be vapor-deposited in a vacuum chamber, wherein the vapor deposition material is variably heated and vaporized in the vacuum chamber to vaporize the vapor-deposited film on the substance to be vapor-deposited. At least one evaporation source for film formation, non-contact temperature measuring means for measuring the evaporation temperature of the vapor deposition material in the evaporation source, and the vapor deposition material of the evaporation source based on the temperature measured by the temperature measuring means. A vacuum vapor deposition apparatus comprising: a control unit that controls a heating temperature to control an evaporation amount. 2. The vacuum vapor deposition apparatus according to claim 1, wherein a plurality of evaporation sources are installed and a plurality of temperature measuring means are provided corresponding to the plurality of evaporation sources. 3. A film thickness measuring means for measuring the film thickness of the vapor deposition material deposited near the object to be vapor-deposited, and a film thickness measured by the film thickness measuring means and a measurement measured by the temperature measuring means. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the control means controls the temperature for heating the vapor deposition material of the vaporization source based on the temperature to control the vaporization amount.