JP5280542B2 - Vapor deposition apparatus and vapor deposition method using the same - Google Patents

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method using the same, and more particularly to a vapor deposition apparatus and a vapor deposition method capable of monitoring in real time the actual thickness of a vapor deposition film deposited on a substrate.

  Following the liquid crystal display (LCD) and plasma display panel (PDP), the organic light emitting device (OLED) is a display device expected as the next generation flat panel display. .

  In such an organic light emitting device, a positive electrode, an organic layer, and a negative electrode are sequentially formed on a substrate and a voltage is applied between the positive electrode and the negative electrode, so that electrons and holes move to the organic layer, respectively. In this method, light is recombined to generate light. At this time, the organic layer among the various layers is generally formed by a thermal deposition method. A conventional deposition apparatus for forming an organic material layer includes a sensor for monitoring the thickness of a deposited film deposited on a substrate. This sensor is disposed so as to be exposed to a vapor deposition source for heating and evaporating the organic material, and is attached to the sensor to detect the amount of the organic material sensed and convert it to the thickness of the deposited film. That is, the thickness of the deposited film deposited indirectly on the substrate is sensed using a sensor. However, since this method is an indirect method that does not actually measure the thickness of the deposited film deposited on the substrate, the thickness measurement accuracy is reduced, and the actual thickness of the deposited film is monitored in real time. There is a problem that can not be. In addition, there is no method for confirming the actual thickness of the deposited film, and a defect in thickness is discovered at the time of device characteristic inspection after the deposition process is completed, resulting in a problem of reducing the production yield of the device.

  The present invention provides a vapor deposition apparatus including a thickness measuring unit capable of measuring an actual thickness of a vapor deposited film deposited on a substrate, and a vapor deposition method using the vapor deposition apparatus.

  A deposition apparatus according to an embodiment of the present invention includes a process chamber for forming a reaction space, a transfer chamber connected to the process chamber, a substrate resting unit positioned in the process chamber for resting a substrate, and the substrate resting unit. And a vapor deposition source for storing the raw material, and a thickness measuring unit that is installed in the transfer chamber and directly measures the actual thickness of the deposited film deposited on the substrate.

  An ellipsometer is used as the thickness measuring means.

  A transmission window is preferably installed at one end of the transfer chamber where the ellipsometer is disposed.

  A sensor is provided on one side of the process chamber and senses the amount of the source material evaporated from the deposition source and calculates the converted thickness of the deposited film.

  A plurality of the process chambers and transfer chambers are provided and connected in one direction, a deposition source is installed in each of the plurality of process chambers, and a thickness measuring unit is installed in each of the plurality of transfer chambers.

  A monitoring unit connected to the sensor to adjust the thickness of the deposited film deposited on the substrate.

  The monitoring unit is connected to a deposition source and is connected to a power source supplied to the deposition source and a control unit for controlling a deposition process time.

  A mask holder is connected to the lower part of the substrate resting means, and a shadow mask is mounted on the mask holder.

  The substrate further includes an auxiliary mask including at least one mask pattern disposed corresponding to the inactive region of the substrate in the open region of the shadow mask.

  A driving unit for moving the auxiliary mask to change the position of the mask pattern is connected to both ends of the auxiliary mask, and the driving unit is connected to a mask holder.

  A deposition method according to an aspect of the present invention includes a step of preparing a substrate in a chamber, a step of forming a deposition film on the substrate, and a step of moving the substrate into a transfer chamber to form a deposition film formed on the substrate. The method includes a step of directly measuring an actual thickness, a step of comparing an actual thickness of the deposited film with a target thickness, and a step of adjusting process conditions according to the thickness comparison result.

  After the step of adjusting the process conditions, the deposited film following the next process is formed according to the adjusted process conditions.

  The method includes a step of setting a target thickness and a deposition control thickness before forming a deposition film on the substrate.

  The method includes the step of sensing the amount of the raw material with a sensor while forming the deposited film on the substrate and calculating the converted thickness of the deposited film.

  When the converted thickness reaches the deposition control thickness, the deposition process is stopped.

  In the step of adjusting the process condition according to the thickness comparison result, the set value of the deposition control thickness is changed.

  The substrate has an active region and an inactive region, and the actual thickness of the deposited film formed in the inactive region is measured.

  The actual thickness of the deposited film formed according to the adjusted process condition and the average thickness of the deposited film formed in the previous process are compared with the target thickness.

  After adjusting the process conditions by comparing the actual thickness of the deposited film with the target thickness, another source material is continuously deposited on the substrate.

  The substrate resting means on which the substrate on which the deposited film is formed is placed is moved into one of the plurality of process chambers connected in one direction, and the substrate is continuously placed on the other substrate. The source material is deposited.

  The method further includes changing the position of the mask pattern of the auxiliary mask before changing the position of the inactive region of the substrate exposed by the mask pattern before depositing another source material on the substrate.

  The vapor deposition apparatus according to the present invention and the vapor deposition method using the vapor deposition apparatus directly measure and monitor the actual thickness of the vapor deposition film formed on the substrate on which the thin film is deposited using the vapor deposition apparatus including the thickness measuring unit. Can do. Accordingly, the deposition apparatus and the deposition method using the same according to the present invention monitor the actual thickness of the deposited film deposited on the substrate in real time, and control the actual thickness of the deposited film. Is corrected in real time, the thickness of the deposited film can be accurately controlled. Therefore, the reliability and production yield of elements formed on the substrate can be increased.

FIG. 1 is a view showing a vapor deposition apparatus according to an embodiment of the present invention. FIG. 2 is a flowchart for explaining a process of controlling the thickness of the deposited film using the deposition apparatus according to the present embodiment. FIG. 3 is a schematic diagram showing a main part of a vapor deposition apparatus according to a modified embodiment of the present invention. 4 is a plan view of a region A of FIG. 3 according to a modified embodiment. FIG. 5 is a sectional view taken along line B-B ′ of FIG. 4. FIG. 6 is a conceptual diagram schematically showing an auxiliary mask according to a modified embodiment. FIG. 7 is a view illustrating an organic light emitting device manufactured using a vapor deposition apparatus according to a modified embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. However, this embodiment is intended to make the disclosure of the present invention complete and to inform a person with ordinary knowledge about the scope of the invention.

  FIG. 1 is a view showing a vapor deposition apparatus according to an embodiment of the present invention.

  Referring to FIG. 1, a deposition apparatus according to an exemplary embodiment of the present invention includes a process chamber 100, a transfer chamber 110 connected to an upper side of the process chamber 100, and a substrate 200 mounted on an upper part of the process chamber 100. The substrate resting means 300, the mask holder 320 connected to the lower part of the substrate resting means 300, the shadow mask 330 mounted on the mask holder 320, the vapor deposition source 400 disposed opposite to the substrate resting means 300, and the transfer A thickness measuring unit 500 installed on the outer wall of the lower portion of the chamber 110 and a robot arm 150 installed in the transfer chamber 110 and moving the substrate 200 into the transfer chamber 110 in the process chamber 100 are included. In addition, the sensor 600 is located on one side of the process chamber 100 and senses the amount of the source material evaporated from the deposition source 400, and a shutter (not shown) located in the space between the substrate resting means 300 and the deposition source 400. A). A vacuum controller 700 provided on one side of the process chamber 100, a first substrate inlet / outlet 801 located on the side wall of the process chamber 100, and a door (not shown) located between the process chamber 100 and the transfer chamber 110. And a second substrate inlet / outlet 802 located on the side wall of the transfer chamber 110.

  The process chamber 100 is manufactured in a cylindrical shape or a rectangular parallelepiped, and includes a predetermined reaction space in which the substrate 200 can be processed. Without being limited thereto, it is desirable that the process chamber 100 be manufactured to correspond to the shape of the substrate 200. A first substrate entrance / exit 801 for loading the substrate 200 is formed on one side wall of the process chamber 100, and the substrate entrance / exit 801 may be formed on the other side wall of the process chamber 100. The vacuum controller 700 installed in the process chamber 100 includes a gate 710 coupled to one side of the process chamber 100, a pipe 720 connected to the gate 710, and a vacuum pump 730 connected to the pipe 720. The gate 710 serves to seal or open the process chamber 100, and a pipe 720 and a vacuum pump 730 are connected to the gate 710. In this way, the gate 710 is opened and the vacuum in the process chamber 100 can be formed using the vacuum pump 730.

  The substrate resting means 300 is provided on the upper side in the process chamber 100 and supports the substrate 200 loaded in the process chamber 100. The substrate resting means 300 includes a support portion 301 that supports the substrate 200 and a drive shaft 302 that is connected to the upper portion of the support portion 301 and rotates the support portion 301. At this time, the drive shaft 302 is connected to a power unit (not shown) that rotates the drive shaft 302.

The mask holder 320 is connected to the lower part of the substrate resting means 300, and the deposition shadow mask 330 is rested on the mask holder 320. Here, the shadow mask 330 allows the source material to be patterned and deposited on the substrate 200.
The deposition source 400 is disposed corresponding to the substrate resting means 300 and serves to evaporate the source material stored in the internal space of the deposition source 400 and provide the evaporated source material on one surface of the substrate 200. Here, the vapor deposition source 400 according to the present embodiment is a point vapor deposition source 400. Of course, the deposition source 400 can be a linear deposition source without being limited thereto. The vapor deposition source 400 includes a crucible 411 and a heater 412 that heats the crucible 411. Here, the crucible 411 is manufactured to have a predetermined space in which an upper portion is opened and a raw material can be stored therein. The heater 412 is disposed in at least one of the side surface and the lower portion of the crucible 411. The crucible 411 is heated using the heater 412 to heat and evaporate a raw material, for example, an organic substance, stored in the internal space of the crucible 411. The heater 412 is connected to the temperature controller 130 and supplies power from the temperature controller 130 to the heater 412. At this time, the temperature in the crucible 411 changes according to the power supplied from the temperature adjustment unit 130 to the heater 412. In addition, the temperature adjustment unit 130 is connected to the control unit 120. The controller 120 controls the power supplied from the temperature controller 130 to the heater 412 according to the actual thickness of the deposited film deposited on the substrate 200.

  A shutter (not shown) is further provided between the substrate resting means 300 and the deposition source 400, and such a shutter (not shown) serves to control the movement path of the evaporated source material. Of course, the shape of the shutter (not shown) can be changed variously.

  One side of the process chamber 100 is provided with a sensor 600 that senses the amount of source material evaporated from the deposition source 400. When the source material is evaporated, the sensor 600 detects this and converts the amount of the source material detected by the sensor 600 into a deposition thickness. That is, the amount of the raw material sensed by the sensor 600 is calculated by the converted thickness of the deposited film deposited on the sensor 600. Therefore, the thickness of the deposited film deposited on the substrate 200 is indirectly detected through the converted thickness of the deposited film deposited on the sensor 600 in real time while the deposition is performed. However, since the thickness of the deposited film detected by the sensor 600 is an indirect thickness detected from the amount of the raw material sensed by the sensor 600, it is different from the actual thickness of the deposited film deposited on the substrate 200. Sometimes. The sensor 600 may be any sensor 600 as long as it can sense the amount of the source material that is evaporated from the deposition source 400 and sprayed. For example, a sensor 600 including a crystal resonator can be used.

  The sensor 600 is connected to a monitoring unit 140 that displays the thickness of the deposited film obtained from the sensor 600 in real time while the deposition is performed, and controls the thickness of the deposited film deposited on the sensor 600. The monitoring unit 140 receives a target thickness to be deposited on the substrate 200 and a deposition control thickness for adjusting the thickness of the deposited film deposited on the sensor 600. The monitoring unit 140 is connected to the control unit 120 that controls a power source applied to the deposition source 400. Subsequently, while the deposition source 400 is heated and the source material is deposited on the substrate 200, the sensor 600 converts the amount of the source material sensed by the sensor 600 into the deposition thickness deposited on the sensor 600, and deposits the material. When the equivalent thickness of the film reaches the deposition control thickness, the deposition process is stopped. That is, when a signal is sent from the monitoring unit 140 to the control unit 120, the control unit 120 controls the temperature adjustment unit 130 to stop the power supply applied to the heater 412 and stop the deposition process.

  The transfer chamber 110 is connected to a side of the process chamber 100 that performs the deposition process. Also, the transfer chamber 110 can be manufactured in a cylindrical shape or a rectangular parallelepiped. Without being limited thereto, it is preferable that the transfer chamber 110 is manufactured to correspond to the shape of the substrate 200. A second substrate entrance / exit 802 where the substrate 200 is unloaded is located on one side wall of the transfer chamber 110. Although not shown, the transfer chamber 110 is connected to a vacuum controller (not shown) that allows the inside of the transfer chamber 110 to be changed to vacuum and atmospheric pressure.

  The robot arm 150 is located in the process chamber 100 and transfers the substrate 200 on which the source material is deposited into the transfer chamber 110. Here, the robot arm 150 may be any means that can move the substrate 200 in the process chamber 100 into the transfer chamber 110. The robot arm 150 according to the present embodiment uses a device that can expand and contract together with an antenna. Using such a robot arm 150, the substrate 200 positioned in the process chamber 100 is moved so as to correspond to the thickness measuring means 500 positioned on the outer wall below the transfer chamber 110. Thereafter, the actual thickness of the deposited film formed on the substrate 200 is measured using the thickness measuring unit 500 while the substrate 200 is placed on the robot arm 150. Then, the substrate 200 is discharged through the second substrate inlet / outlet 802 disposed on one side wall of the transfer chamber 110 using the robot arm 150.

  The deposition apparatus according to the present embodiment includes a thickness measuring unit 500 that can measure the actual thickness of the deposited film deposited on the substrate 200. Referring to FIG. 1, the thickness measuring unit 500 is installed on the outer wall below the transfer chamber 110. The thickness measuring unit 500 can calculate the actual thickness of the deposited film by directly measuring the thickness of the deposited film deposited on the substrate 200. The thickness measuring unit 500 according to the present embodiment is an ellipsometer that measures the actual thickness of the deposited film using light. The ellipsometer measures the thickness of the deposited film by irradiating the measurement target film with light such as a laser and interpreting the change in the polarization state of the light reflected from the surface of the measurement target film. The thickness measurement unit 500 includes a light irradiation unit 511 that irradiates light such as laser light, and a detection unit 512 that detects light reflected by the deposited thin film. The first plate 521 for transmitting the light emitted from the light irradiating means 511 and the light reflected by the deposited film are located at the lower part of the transfer chamber 110 where the thickness measuring means 500 is disposed. A second plate 522 is provided to allow transmission in the direction. At this time, the first and second plates 521 and 522 are made of a light transmissive material that transmits light. The measurement point irradiated with light for measuring the thickness of the deposited film deposited on the substrate 200 is preferably an inactive region of the substrate 200. For this purpose, the substrate 200 is moved using the robot arm 150 so that the inactive region of the substrate 200 placed on the robot arm 150 is positioned corresponding to the thickness measuring unit 500. Thus, by measuring the actual thickness of the deposited film deposited on the inactive region of the substrate 200, the actual thickness of the deposited film deposited on the active region of the substrate 100 can be determined. At this time, the thickness measuring unit 500 is connected to the monitoring unit 140.

  FIG. 2 is a flowchart for explaining a process of controlling the thickness of the deposited film using the deposition apparatus according to the present embodiment.

  Hereinafter, a process of controlling the thickness of the deposited film using the deposition apparatus according to the embodiment of the present invention will be described with reference to FIGS. 1 and 2.

  FIG. 2 is a flowchart for explaining a process of controlling the thickness of the deposited film using the deposition apparatus according to the embodiment.

  First, the target thickness to be deposited and the thickness of deposition control are set in the monitoring unit 140 (S100). The initial value of the deposition control thickness is equal to the target thickness. Then, power is supplied to the heater 412 through the temperature controller 130 to heat the crucible 411 in which the source material is stored, thereby forming a deposited film on the substrate 200 (S200). While the deposited film is formed, the sensor 600 senses the amount of the raw material sensed by the sensor 600 in real time, and calculates the sensed amount of the raw material by the equivalent thickness of the deposited film (S300). The calculated equivalent thickness of the deposited film is displayed on the monitoring unit 140 in real time. Continuing to compare the equivalent thickness of the vapor deposition film calculated by the sensor 600 with the thickness of the vapor deposition control set in the monitoring unit 140, when the equivalent thickness reaches the vapor deposition control thickness, the vapor deposition process is stopped. The After the process is stopped by adjusting the deposition control thickness, the actual thickness of the deposited film deposited on the substrate 200 is measured through the thickness measuring unit 500 (S500). At this time, a door (not shown) disposed between the process chamber 100 and the transfer chamber 110 is opened, and the substrate 200 is moved into the transfer chamber 110 using the robot arm 150. 110, the actual thickness of the deposited film is measured using the thickness measuring unit 500 disposed on the outer wall of the lower part of S 110.

  In succession, the actual thickness of the deposited film is compared with the target thickness, or the average value of the actual thickness is compared with the target thickness S600. For example, in the case of a first substrate loaded in the process chamber 100 and having a deposited film formed thereon, the actual thickness of the deposited film formed on the first substrate is compared with the target thickness. Then, when the deposited film is formed on the second substrate by taking over the first substrate, the average value of the actual thicknesses of the deposited films formed on the first substrate and the second substrate is compared with the target thickness. In addition, when the deposition film is continuously formed on the third substrate to the tenth substrate by taking over the second substrate, the actual thickness of the deposition film formed on the first substrate to the tenth substrate in each deposition process. Compare the average thickness with the target thickness. In this embodiment, the average value of the actual thicknesses of the deposited films formed on the respective substrates 200 is calculated for the latest 10 substrates 200 and compared with the target thickness. For example, when a deposition film is formed on the eleventh substrate in succession to the tenth substrate, an average value of actual thicknesses of the deposition films formed on the second substrate to the eleventh substrate is compared with a target thickness. Of course, the present invention is not limited to this, and an average value can be calculated for various numbers of substrates 200 and compared with the target thickness. As described above, in this embodiment, the actual thickness of the deposited film formed on the substrate 200 at each deposition step is compared with the target thickness, or the average value of the actual thickness of the deposited film is determined as the target thickness. After comparing with S600, the thickness of deposition control is corrected S700. Then, the thickness of the deposited film following the next step is adjusted by the corrected deposition control thickness S800. Therefore, the actual thickness of the vapor deposition film formed on the substrate 200 is measured at each time of each vapor deposition step, and the thickness of the vapor deposition control is corrected in comparison with the target thickness, so that the substrate 200 can be trusted. A vapor-deposited film having a thickness can be formed.

  In the present embodiment, the thickness of the deposited film deposited on the substrate 200 is adjusted using the converted thickness of the deposited film calculated by the sensor 600. However, the present invention is not limited to this. The thickness of the deposited film deposited on the substrate 200 can be controlled without using the thickness. That is, the target thickness to be deposited is set in the monitoring unit 140. Then, power is supplied to the heater 412 to heat the crucible 411 in which the raw material is stored, so that a deposited film is formed on the substrate 100. After the vapor deposition step, the actual thickness of the vapor deposition film formed on the substrate 200 is measured using the thickness measuring unit 500 and compared with the target thickness. If the actual thickness of the deposited film does not match the target thickness, the process conditions such as the deposition rate and the power source applied to the heater 412 are modified. In the next step, the deposited film is formed by adjusting the corrected process conditions.

  FIG. 3 is a schematic view showing a main part of a vapor deposition apparatus according to a modification of the embodiment of the present invention.

  Hereinafter, a vapor deposition apparatus according to a modified embodiment of the embodiment will be described with reference to FIG.

  Referring to FIG. 3, the deposition apparatus according to a modified embodiment is an in-line deposition apparatus, and includes a plurality of process chambers 100a, 100b, 100c and a plurality of transfer chambers (110a, 110b, 110c: 110). Manufactured in a unidirectional array. For example, a plurality of deposition process chambers 100 and transfer chambers 110 shown in FIG. 1 may be provided and connected in one direction. Subsequently, a vapor deposition film can be continuously formed on the single substrate 200 using the vapor deposition apparatus according to the modified embodiment. In the present embodiment, an in-line deposition apparatus including three process chambers 100a, 100b, and 100c and three transfer chambers 110a, 110b, and 110c is manufactured. However, the present invention is not limited thereto. Can be produced in various numbers.

  Referring to FIG. 3, each of the process chambers (100a, 100b, 100c: 100) includes deposition sources 400a, 400b, 400c. Each of the vapor deposition sources 400a, 400b, and 400c preferably stores different source materials. In addition, a transfer chamber 110 is disposed between the process chambers 100a, 100b, and 100c, and an actual thickness of a deposited film deposited on the substrate 200 is measured on a lower outer wall of each of the transfer chambers 110a, 110b, and 110c. Thickness measuring means 500a, 500b, 500c are provided. The plurality of vapor deposition sources 400a, 400b, and 400c and the plurality of thickness measuring units 500a, 500b, and 500c, the guide member 310 disposed opposite to the guide member 310, the substrate resting unit 300 connected to the guide member 310, and the substrate resting unit 300. Corresponding to the inactive region 200b of the substrate 200 in the open region of the shadow mask 330 connected to the mask holder 320 and the shadow mask 330 attached to the mask holder 320. An auxiliary mask 340 is included. A door (not shown) is installed between the process chambers 100a, 100b, and 100c and the transfer chambers 110a, 110b, and 110c. When the door (not shown) is opened, the substrate resting means 300 transfers each of the transfer chambers. Move to chamber 110a, 110b, 110c or process chamber 100a, 100b, 100c.

  The guide member 130 serves to allow the substrate resting means 300 on which the substrate 200 is placed to move between the process chambers 110a, 110b, and 110c and the transfer chambers 110a, 110b, and 110c. Here, the guide member 130 is manufactured in a shape corresponding to the extending direction in which the plurality of vapor deposition sources 400a, 400b, and 400c and the plurality of thickness measuring units 500a, 500b, and 500c are arranged. Subsequently, the substrate resting means 300 connected to the guide member 310 can move between the process chambers 100a, 100b, and 100c and the transfer chambers 110a, 110b, and 110c along the guide member 310.

  FIG. 4 is a plan view of region A of FIG. 3 according to a modified embodiment. FIG. 5 is a cross-sectional view taken along line B-B ′ of FIG. 4. FIG. 6 is a conceptual diagram schematically illustrating an auxiliary mask according to a modified embodiment.

  As shown in FIGS. 4 and 5, the auxiliary mask 340 is disposed corresponding to the inactive region 200 b of the substrate 200 in the open region of the shadow mask 330. Such an auxiliary mask 340 includes a mask pattern 341. A variety of mask patterns 341 are provided. Referring to FIG. 5, the mask pattern 342 of the auxiliary mask 340 exposes a specific area among the open areas of the shadow mask 330. Accordingly, the source material is deposited on the inactive region 200b of the substrate 200 in the region exposed by the mask pattern 341 of the auxiliary mask 340. Further, as shown in FIG. 4, the position of the mask pattern 341 of the auxiliary mask 340 can be changed. As a result, the position of the region exposed by the mask pattern 341 in the non-active region 200b of the substrate 200 is changed. Referring to FIG. 6, a gear member 342 is connected to both ends of the auxiliary mask 340 in the length direction, and a drive motor 343 is connected to the gear member 342. The gear member 342 is connected to the mask holder 320 as shown in FIGS. The driving motor 343 may use any one of a micro-moving motor and a stepping motor capable of precise movement control of the auxiliary mask 340. The auxiliary mask 340 is provided with a hole (not shown) for moving the auxiliary mask 340 by being coupled with the fine gear of the gear member 342. In the modified embodiment, the auxiliary mask 340 is moved using the gear member 342 and the drive motor 343. However, the present invention is not limited to this, and the means can move the position of the mask pattern 341 of the auxiliary mask 340. Any means can be used.

  When the source material is continuously deposited on the single substrate 200, the source material is deposited using the first deposition source 400a, the mask pattern 341 of the auxiliary mask 340 is moved, and the second deposition source 400b is used. The source material is deposited. Accordingly, the first deposition film deposited through the first deposition source 400a and the second deposition film deposited through the second deposition source 400b are separated from each other in the inactive region 200b of the substrate 200 deposited through the auxiliary mask 340. Formed to be.

  FIG. 7 is a view showing an organic light emitting device manufactured using a vapor deposition apparatus according to a modified embodiment of the present invention.

  Hereinafter, the operation of the deposition apparatus according to the modified embodiment will be described with reference to FIGS. 3 and 7.

  First, the target thickness to be deposited and the deposition control thickness are set in the monitoring unit 140. Then, the substrate 200 is loaded into the first chamber 100 a through the first substrate inlet / outlet 801, and the substrate 200 is seated on the support portion 301 of the substrate resting means 300. At this time, the raw materials stored in the first vapor deposition source 400a, the second vapor deposition source 400b, and the third vapor deposition source 400c use separate organic substances in powder form. The mask holder 320 connected to the lower part of the substrate resting means 300 is mounted with a shadow mask 330, and an auxiliary mask 340 is provided at a position corresponding to the inactive region 200b of the substrate 200 in the open region of the shadow mask 330. Be placed. Then, the drive shaft 302 of the substrate resting means 300 is moved along the guide member 310 so that the support portion 301 connected to the drive shaft 302 is positioned immediately above the first vapor deposition source 400a. In succession, the first organic material 401 filled in the first crucible 411 a is heated and evaporated to form a deposited film on the substrate 200. During the formation of the deposited film, the first sensor 600a disposed on one side of the first chamber 100a senses the amount of the first organic material 401 in real time and calculates the converted thickness of the first organic material film 400a. When the converted thickness of the first organic film 400a calculated by the first sensor 600a reaches the deposition control thickness, the deposition process is stopped. As a result, a first organic film 401a is formed in each of the active region 200a and the non-active region 200b of the substrate 200 as shown in FIG. Subsequently, the substrate 200 having the first organic material film 401a formed thereon is moved to the first transfer chamber 110a, and the first thickness measuring unit 500a installed on the lower outer wall of the first transfer chamber 110a is used. The actual thickness of the first organic material film 401a deposited on the inactive region 200b of the substrate 200 is measured. Then, the actual thickness of the first organic film 401a is compared with the target thickness, or the average value of the actual thickness of the first organic film 401a is compared with the target thickness. That is, in the case of the first substrate loaded in the process chamber 100 to form the first organic film 401a, the actual thickness of the first organic film 401a formed on the first substrate is compared with the target thickness. In the case of a plurality of substrates 200 in which the first organic material film 401a is formed in the plurality of substrates 200 that are continuously loaded into the process chamber 100a, the plurality of substrates on which the first organic material film 401a is formed in advance. 200 and the average thickness of the first organic films 401a formed on the plurality of substrates 200 are compared with the target thickness. Then, after correcting the deposition control thickness of the monitoring unit 140, the thickness of the first organic film 401a is adjusted and formed according to the corrected deposition control thickness in the next step.

  Thereafter, the substrate 200 on which the first organic layer 400a is formed is moved into the second process chamber 100b, the second transfer chamber 110b, the third process chamber 100c, and the third transfer chamber 110c, and then the first process chamber 100a and The process performed in the second transfer chamber 110c is repeated. However, before depositing the second organic substance 402 and the third organic substance 403, the position of the mask pattern 341 of the auxiliary mask 340 is changed by rotating the gear member 342 connected to the auxiliary mask 340. That is, as shown in FIG. 7, the auxiliary mask is formed so that the first organic film 401a, the second organic film 402a, and the third organic film 403a formed in the inactive region 200b of the substrate 200 are spaced apart from each other. The position of 340 is changed. Then, the substrate 200 on which the first organic film 401a, the second organic film 402a, and the third organic film 403a are formed is carried out through the second substrate entrance / exit 802.

  Further, the vapor deposition sources 400a, 400b, and 400c according to the modified embodiment use point vapor deposition sources. However, the vapor deposition sources 400a, 400b, and 400c may use linear vapor deposition sources without being limited thereto. Then, the position of the measurement point of the organic material film measured through the thickness measuring means 500 is measured a plurality of times while being different from each other. Through this, the uniformity of the deposited film formed on the substrate 200, the blockage of each opening constituting the linear deposition source and the deposition rate are confirmed by comparing the thickness of the organic film measured at different positions. can do.

  In this embodiment, an organic material is used as a raw material, but the present invention is not limited to this, and various materials such as an inorganic material and a metal can be used.

Claims (21)

A process chamber forming a reaction space;
A transfer chamber coupled to the process chamber;
A substrate resting means for resting the substrate located in the process chamber;
A vapor deposition source that is disposed opposite to the substrate resting means and stores a raw material,
A thickness measuring means for directly measuring the actual thickness of the deposited film deposited on the substrate by being installed in the transfer chamber;   2. The vapor deposition apparatus according to claim 1, wherein an ellipsometer is used as the thickness measuring means.   The vapor deposition apparatus according to claim 2, wherein a transmission window is installed at one end of the transfer chamber in which the ellipsometer is arranged.   The vapor deposition according to claim 1, further comprising a sensor provided on one side of the process chamber for sensing the amount of a raw material evaporated from a vapor deposition source and calculating the converted thickness of the vapor deposition film. apparatus.   A plurality of the process chambers and the transfer chambers are connected in one direction, a deposition source is installed in each of the plurality of process chambers, and a thickness measuring unit is installed in each of the plurality of transfer chambers. The vapor deposition apparatus according to claim 1.   The deposition apparatus according to claim 4, further comprising a monitoring unit connected to the sensor to adjust a thickness of a deposited film deposited on the substrate.   The deposition apparatus according to claim 6, wherein the monitoring unit is connected to a power source supplied to the deposition source by being connected to the deposition source, a control unit for controlling a deposition process time, and a thickness measuring unit. .   The deposition apparatus according to claim 1, wherein a mask holder is connected to a lower portion of the substrate resting means, and a shadow mask is attached to the mask holder.   The deposition apparatus according to claim 8, further comprising an auxiliary mask disposed corresponding to a non-active region of the substrate in an open region of the shadow mask and including at least one mask pattern.   The driving device according to claim 9, wherein a driving unit for moving the auxiliary mask to change a position of the mask pattern is connected to both ends of the auxiliary mask, and the driving unit is connected to a mask holder. Vapor deposition equipment. Providing a substrate in a process chamber that forms a reaction space ;
Forming a deposited film on the substrate;
Moving the substrate into a transfer chamber connected to the process chamber to directly measure the actual thickness of the deposited film formed on the substrate;
Comparing the actual thickness of the deposited film with a target thickness;
Adjusting a process condition according to the thickness comparison result.   The deposition method according to claim 11, wherein after the step of adjusting the process conditions, the deposited film following the next process is formed according to the adjusted process conditions.   The deposition method according to claim 11, further comprising a step of setting a target thickness and a deposition control thickness before the step of forming a deposition film on the substrate.   12. The deposition method according to claim 11, further comprising the step of sensing the amount of the source material with a sensor while calculating the deposition thickness on the substrate and calculating the equivalent thickness of the deposition film.   The vapor deposition method according to claim 14, wherein the vapor deposition step is stopped when the converted thickness reaches a vapor deposition control thickness.   The deposition method according to claim 13 or 15, wherein the step of adjusting the process condition according to the thickness comparison result changes a set value of a deposition control thickness.   The deposition method according to claim 11, wherein the substrate has an active region and an inactive region, and an actual thickness of the deposited film formed in the inactive region is measured.   The average value of the actual thickness of the deposited film formed by the adjusted process condition and the actual thickness of the deposited film formed in the previous process is compared with a target thickness. The vapor deposition method as described.   The deposition method according to claim 11, wherein after the process condition is adjusted by comparing an actual thickness of the deposited film with a target thickness, another source material is continuously deposited on the substrate. A plurality of the process chambers and transfer chambers are connected to be aligned in one direction,
The substrate resting means on which the substrate is placed is moved into any one of the plurality of process chambers connected in one direction, and another source material is continuously deposited on the substrate. The vapor deposition method of Claim 19 characterized by these. A shadow mask having an open region for depositing a source material on the substrate, and an auxiliary mask disposed corresponding to an inactive region of the substrate among the open region of the shadow mask,
The method further includes changing a position of the mask pattern of the auxiliary mask before changing the position of the inactive region of the substrate exposed by the mask pattern before depositing another source material on the substrate. The vapor deposition method according to claim 20.

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