CN102217038B - Deposition apparatus and deposition method using the same - Google Patents
Deposition apparatus and deposition method using the same Download PDFInfo
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- CN102217038B CN102217038B CN200980135093.6A CN200980135093A CN102217038B CN 102217038 B CN102217038 B CN 102217038B CN 200980135093 A CN200980135093 A CN 200980135093A CN 102217038 B CN102217038 B CN 102217038B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
A transmission chamber connected to the processing chamber, a substrate seating part located in the processing chamber to seat a substrate, a deposition source facing the substrate seating part and storing a source material, and a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate. It is possible to directly measure and monitor the practical thickness of the deposition layer using the deposition apparatus employing the thickness measuring part. Thus, a thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer in real time and correcting the deposition control thickness used to control the practical thickness of the deposition layer, so that the reliability and the yield rate of a device fabricated on the substrate can be improved.
Description
Technical field
The present invention is about a kind of deposition instrument (deposition apparatus) and utilize a deposition process of this deposition instrument, more specifically, and about a kind of deposition instrument and the method that can monitor an actual (real) thickness of the one deck that is deposited on a substrate in real time.
Background technology
Organic light emitting apparatus (organic light emitting device; OLED) for continuing such as LCD (liquid crystal display; LCD) and Plasmia indicating panel (plasma display panel; The display of future generation that occurs after the display such as PDP).
This organic light emitting apparatus utilizes following scheme: form a positive electrode, an organic material layer and a negative electrode in regular turn on a substrate, supply a voltage between positive electrode and negative electrode, so that electronics (electron) and hole (hole) move to this organic material layer, make electronics and hole-recombination (recombine) then and luminous.Herein, organic material layer utilizes the heat deposition method to form usually.A kind of conventional deposition instrument that is used to form this typical case's organic material layer adopts a transducer to be deposited on a thickness of one deck of this substrate with monitoring.This transducer is configured to be exposed to a sedimentary origin, and this sedimentary origin heating is also evaporated an organic material.By this, this sensor is attached to a total amount of its organic material, and the total amount of this organic material is converted to the thickness of the layer that is deposited on substrate.That is, utilize transducer to detect indirectly to be deposited on the thickness of the layer of substrate.Yet, because of this scheme is a kind of indirect scheme, but not be used for the scheme of thickness that actual measurement is deposited on the layer of substrate, thus the accuracy of thickness measure reduce and be difficult to monitor in real time be deposited on substrate layer an actual (real) thickness.And, because of there not being the method for the actual (real) thickness that is used to verify the layer that is deposited on substrate, when deposition procedures finishes the feature of post-evaluation device, can find the thickness defective, so may reduce the yield (yield rate) of device.
Summary of the invention
The invention provides a kind of deposition instrument, this deposition instrument adopts thickness measure parts of the actual (real) thickness that can measure the one deck that is deposited on a substrate, and a kind of deposition process that utilizes this deposition instrument is provided.
According to an exemplary embodiment, a kind of deposition instrument comprises: a treatment chamber has a reaction compartment in this treatment chamber; One transfer chamber is connected to this treatment chamber; One substrate bears parts, is arranged in this treatment chamber, bears a substrate on the parts to bear in this substrate; One sedimentary origin is in the face of this substrate bears parts and stores a source material; And thickness measure parts, be installed in this transfer chamber, directly to measure an actual (real) thickness that is formed at the sedimentary deposit on this substrate.
These thickness measure parts can utilize an oval calibrator (ellipsometer).
One light-passing board can be installed on a side that is provided with this ellipse calibrator of this transfer chamber.
This deposition instrument can also comprise a transducer, and this transducer is installed on the side in this treatment chamber, with sensing from a total amount of this source material of this sedimentary origin evaporation and calculate a conversion thickness of this sedimentary deposit.
Can prepare a plurality of treatment chamber and a plurality of transfer chamber and interconnect along a direction, respectively this treatment chamber comprises and is installed on one of them sedimentary origin, and respectively this transfer chamber comprises and is installed on one of them thickness measure parts.
This deposition instrument can also comprise a monitoring means, and this monitoring means is connected to this transducer, is formed at a thickness of the sedimentary deposit of this substrate with adjustment.
This monitoring means can be connected to a control unit, and this control unit is connected to this sedimentary origin, is supplied to the power and a deposition processes time of this sedimentary origin with control.
This deposition instrument can also comprise a shield bracket (mask holder), and this shield bracket is connected to the bottom that this substrate bears parts, and a wherein shadow shield (shadow mask) can be installed in this shield bracket.
This deposition instrument can also comprise an auxiliary shield, and this auxiliary shield comprises at least one shielding pattern and faces an inactive regions of this substrate between the open area of this shadow shield.
A plurality of driver elements can be arranged at two ends of this auxiliary shield, and to change the position of this shielding pattern by mobile this auxiliary shield, these driver elements are connected to this shield bracket.
According to another exemplary embodiment, a kind of deposition process comprises: prepare a substrate in a chamber; Form one first sedimentary deposit on this substrate by depositing a source material; Move an actual (real) thickness of also directly measuring this first sedimentary deposit in this substrate to one transfer chamber; Relatively this actual (real) thickness of this first sedimentary deposit and a target thickness; And, adjust a plurality of treatment conditions according to this comparative result.
After adjusting these treatment conditions, can under these adjusted treatment conditions, form one second sedimentary deposit.
Before forming this first sedimentary deposit, this deposition process can also comprise determines this target thickness and a deposition control thickness.
By in forming this first sedimentary deposit process in a total amount of transducer place this source material of sensing, can calculate a conversion thickness of this first sedimentary deposit.
When this conversion thickness of this first sedimentary deposit reaches this deposition control thickness, can stop this deposition procedures.
When adjusting these treatment conditions, can change this deposition control thickness according to this comparative result.
This substrate can comprise an active region and an inactive regions, and can measure this actual (real) thickness of this first sedimentary deposit that is formed at this inactive regions.
This actual (real) thickness of this second sedimentary deposit of forming under these adjusted treatment conditions can be compared with this target thickness with a mean value of this actual (real) thickness of this first sedimentary deposit.
After actual (real) thickness by this first sedimentary deposit relatively and this target thickness were adjusted these treatment conditions, this deposition process can also be contained in the different source material of successive sedimentation on this substrate.
Can bear parts by a substrate that will bear this substrate moves to along the interconnective a plurality of treatment chamber of a direction and at least in one of them, deposits these different source materials continuously on this substrate.
Before these different source materials of deposition, this deposition process can also comprise the position of a shielding pattern that changes an auxiliary shield, with the position of this inactive regions of changing this substrate that this shielding pattern exposed.
The accessible effect of the present invention
As mentioned above, utilize the deposition instrument that adopts the thickness measure parts, can directly measure and monitor an actual (real) thickness of the sedimentary deposit that is formed on the substrate that deposits a film.Therefore, be formed at the deposition control thickness that the actual (real) thickness of the sedimentary deposit on this substrate and correction are used to control the actual (real) thickness of this sedimentary deposit by monitoring in real time, the thickness of this sedimentary deposit can be controlled exactly, therefore reliability and the yield that is made in the device on this substrate can be improved.
Description of drawings
By reading in conjunction with the accompanying drawings to explanation of the present invention, can more at large understand exemplary embodiment of the present invention, in the accompanying drawing:
Fig. 1 is the schematic diagram according to a deposition instrument of one embodiment of the invention;
Fig. 2 is a flow chart, is used to explain the program of the described deposition instrument of a kind of Fig. 1 of utilization with a thickness of controlling a sedimentary deposit;
Fig. 3 is the modification according to the described embodiment of Fig. 1, the schematic diagram of a critical piece of a deposition instrument;
Fig. 4 is the plane graph of a regional A of the described deposition instrument of Fig. 3;
Fig. 5 is the cutaway view along the described line B-B ' intercepting of Fig. 4;
Fig. 6 is according to the described modification of Fig. 3, the concept map of an auxiliary shield; And
Fig. 7 is the stereogram that utilizes the organic light emitting apparatus that the described deposition instrument of Fig. 3 makes.
Embodiment
Below, describe specific embodiments of the invention with reference to the accompanying drawings in detail.Yet the present invention can be embodied as different forms, and should not be regarded as only limiting to embodiment as herein described.Provide these embodiment to be intended to make disclosure of the present invention thorough and complete, and pass on scope of the present invention comprehensively to person skilled in the art person.In addition, same or analogous label is represented same or analogous composition assembly, although these labels can come across in different embodiments of the invention or the accompanying drawing.
Fig. 1 is the schematic diagram according to a deposition instrument of one embodiment of the invention.
Referring to Fig. 1, this deposition instrument comprises: a treatment chamber 100; One transfer chamber 110 is connected to a upper lateral part of treatment chamber 100; One substrate bears parts 300, is connected to an inwall on a top of treatment chamber 100, and wherein this substrate bears and bears a substrate 200 in the parts 300; One shield bracket 320 is connected to the bottom that substrate bears parts 300; One shadow shield 330 is installed in the shield bracket 320; One sedimentary origin 400 is configured to bear parts 300 in the face of substrate; One thickness measure parts 500 are installed on the outer wall of a bottom of transfer chamber 110; And a mechanical arm (robot arm) 150, be installed in the transfer chamber 110 with the substrate 200 in the mobile treatment chamber 100 to transfer chamber 110.In addition, this deposition instrument comprises: a transducer 600 is arranged at an inboard of treatment chamber 100, with a total amount of a source material 401 of sensing auto-deposition source 400 evaporations; And a shutter (scheming not shown), be arranged at substrate and bear in the space between parts 300 and the sedimentary origin 400.According to embodiments of the invention, this deposition instrument also comprises: vacuum control parts 700 are arranged at a side of treatment chamber 100; One first substrate lock 801 is arranged on the lateral wall of treatment chamber 100; One (scheming not shown) is arranged between treatment chamber 100 and the transfer chamber 110; And one second substrate lock 802, be arranged in the sidewall of transfer chamber 110.
Substrate bears the inwall that parts 300 are installed into the top that is connected to treatment chamber 100, enters the substrate 200 of treatment chamber 100 with support.Substrate bears parts 300 and comprises a support 301 that is used for supporting substrate 200 and be connected to the driving shaft 302 of a top of support 301 with runing rest 301.Herein, driving shaft 302 is connected to a power unit (scheming not shown) that makes its rotation.
One shutter (scheming not shown) can also be arranged at substrate and bear between parts 300 and the sedimentary origin 400.This shutter plays the effect of a transfer path of the source material that control evaporated.Herein, this shutter can have various shapes.
Provide a target thickness and a deposition control thickness of desiring to be deposited on the layer on the substrate 200 to give monitoring means 140, this deposition control thickness is used to control the thickness that is deposited on the layer on the transducer 600.Monitoring means 140 is connected to control unit 120, and control unit 120 controls are supplied to the power of sedimentary origin 400.In heating deposition source 400 and thereby the process of sedimentary derivation material 401 on substrate 200 in, transducer 600 is converted to the total amount of the source material of himself institute's sensing the deposit thickness of this layer that is deposited on transducer 600, and, if this deposit thickness reaches this deposition control thickness, then deposition procedures stops.That is if monitoring means 140 sends a signal to control unit 120, then control unit 120 control temperature adjustment units 130 are to stop power supply to heater 412, in order to do stopping this deposition procedures.
Mechanical arm 150 is arranged in the treatment chamber 100, deposits the substrate 200 of source material 401 to transfer chamber 110 to move.Herein, mechanical arm 150 can be any device that the substrate 200 in the treatment chamber 100 can be moved to transfer chamber 110.In present embodiment, mechanical arm 150 utilizes a telescopic antenna.Utilizing mechanical arm 150 will be arranged at substrates 200 in the treatment chamber 100 moves in the face of the thickness measure parts 500 on the outer wall of the bottom that is arranged at transfer chamber 110.Then, bear under the state on the mechanical arm 150 in substrate 200, thickness measure parts 500 are measured the actual (real) thickness that is deposited on the layer on the substrate 200.Utilize mechanical arm 150, via the second substrate lock 802 in the sidewall that is installed on transfer chamber 110 with substrate 200 dispatch to the outside.
Deposition instrument according to present embodiment of the present invention comprises thickness measure parts 500, and thickness measure parts 500 can be measured the actual (real) thickness that is deposited on the layer on the substrate 200.Referring to Fig. 1, thickness measure parts 500 are installed on the outer wall of bottom of transfer chamber 110.Thickness measure parts 500 are directly measured the thickness that is deposited on the layer on the substrate 200, and calculate the actual (real) thickness of this sedimentary deposit thus.Thickness measure parts 500 according to present embodiment are an oval calibrator that utilizes the actual (real) thickness of this sedimentary deposit of photo measure.This ellipse calibrator emission light (for example laser) is on a measurement target layer, and the analysis reflection is measured the thickness of this sedimentary deposit by this from the variation of the polarisation of light on a surface of this measurement target layer.Therefore, thickness measure parts 500 comprise and are used to launch a light emission component 511 of light (for example laser) and are used for the detection components 512 of detection of reflected from the light of this sedimentary deposit.One first plate 521 and one second plate 522 are arranged at the bottom of the transfer chamber 110 that is provided with thickness measure parts 500.The light that first plate 521 sees through from light emission component 511,522 of second plates see through the light towards the position reflection that is provided with detection components 512 from this sedimentary deposit.First plate 521 and second plate 522 form a light transmissive material.Can be in by the measurement point that light shone in the inactive regions of substrate 200, and measure the thickness that is deposited on the layer on the substrate 200.Be to measure thickness, mechanical arm 150 moving substrates 200, in order to do the position of the inactive regions that makes the substrate 200 that is arranged on the mechanical arm 150 corresponding to thickness measure parts 500.Therefore, be deposited on an actual (real) thickness of the one deck on the inactive regions of substrate 200 by measurement, can calculate an actual (real) thickness of the one deck in the active region that is deposited on substrate 200.Thickness measure parts 500 are connected to monitoring means 140.
Fig. 2 is a flow chart, is used to explain the program of the described deposition instrument of a kind of Fig. 1 of utilization with a thickness of controlling a sedimentary deposit;
Below, with reference to Fig. 1 and Fig. 2 the program that utilization deposits the thickness of instrument control sedimentary deposit is according to an embodiment of the invention described.
At first, in step S100, determine target thickness and this deposition control thickness of the layer of desire deposition in monitoring means 140 places.One initial value of this deposition control thickness equals this target thickness.Then, in step S200, supply power to heater 412, and store the smelting furnace 411 of source material 401, form sedimentary deposit on substrate 200 by heating via temperature adjustment unit 130.In step S300, when forming this sedimentary deposit, transducer 600 in real time the source material that evaporated of sensing total amount and calculate the conversion thickness of the source material total amount of institute's sensing as this sedimentary deposit.Monitoring means 140 shows this conversion thickness of this sedimentary deposit in real time.In step S400, relatively the conversion thickness and determined deposition control thickness in monitoring means 140 of this sedimentary deposit of being calculated of transducer 600 continuously, and if this conversion thickness reaches this deposition control thickness, this deposition procedures stops.After deposition procedures stopped, in step S500, thickness measure parts 500 were measured the actual (real) thickness of this sedimentary deposit that is formed at substrate 200.At this moment, in opening (the scheming not shown) that is arranged at 110 of treatment chamber 100 and transfer chamber and utilizing mechanical arm 150 moving substrates 200 to transfer chamber 110, utilize thickness measure parts 500 to measure the actual (real) thickness of these sedimentary deposits, thickness measure parts 500 are arranged on the outer wall of bottom of transfer chamber 110.
Then, in step S600, relatively a mean value of the actual (real) thickness of this sedimentary deposit and this target thickness or comparison actual (real) thickness and this target thickness.For example, if one first substrate (sedimentary deposit is in being formed on this first substrate behind this first substrate) enters treatment chamber 100, then relatively be formed at an actual (real) thickness and this target thickness of the sedimentary deposit of this first substrate.Then, if a sedimentary deposit is formed on one second substrate, then relatively be formed at a mean value and this target thickness of the actual (real) thickness of these sedimentary deposits on this first and second substrate.Then, if these sedimentary deposits continue to be formed on the 3rd to the tenth substrate, then relatively be formed at each mean value of actual (real) thickness of these sedimentary deposits on this first to the tenth substrate and the target thickness of each deposition procedures.In present embodiment, calculate each mean value of the actual (real) thickness that is formed at 10 these sedimentary deposits on the substrate and compare these mean values and this target thickness.For example, if a sedimentary deposit is formed on the hendecyl plate that occupy after the tenth substrate, then relatively be formed at this second a mean value and this target thickness of actual (real) thickness of these sedimentary deposits to the hendecyl plate.The present invention is not limited only to present embodiment.Therefore, can calculate these sedimentary deposits on the substrate that is formed at varying number actual (real) thickness a mean value and it is compared with this target thickness.As mentioned above, in present embodiment, for each deposition procedures, after in step S600, relatively being formed at a mean value and this target thickness of actual (real) thickness of the actual (real) thickness of the sedimentary deposit on the substrate 200 and this target thickness or these sedimentary deposits of comparison, in step S700, revise the deposition control thickness.Then, in step S800, be formed at a thickness of a sedimentary deposit of next deposition procedures by the deposition control thickness adjustment of having revised.Therefore, can have a sedimentary deposit of a reliable thickness on substrate 200 by measuring the actual (real) thickness that is formed at the sedimentary deposit on the substrate 200 in each deposition procedures, relatively this measured actual (real) thickness and this deposition control thickness and revise this deposition control thickness, forming.
In present embodiment, although be formed at the thickness of the sedimentary deposit on the substrate 200 with adjustment by the conversion thickness that is used in the sedimentary deposit that calculates at transducer 600 places, yet the present invention is not limited only to present embodiment, and to need not to utilize the conversion thickness of this sedimentary deposit be the thickness that may command is formed at the sedimentary deposit on the substrate 200.That is 140 places determine this target thickness in monitoring means.Then, give heater 412 and add hot melting furnace 411, form sedimentary deposit on substrate 200 by power supply.After this deposition procedures finishes, utilize thickness measure parts 500 to measure the actual (real) thickness that is formed at the sedimentary deposit on the substrate 200, and relatively this measured actual (real) thickness and this target thickness.If this actual (real) thickness is not equal to this target thickness, then change treatment conditions, for example deposition velocity and be supplied to the power of heater 412.Then, in subsequent processing, under these treatment conditions that changed, form sedimentary deposit.
Fig. 3 is the modification according to the described embodiment of Fig. 1, the schematic diagram of a critical piece of a deposition instrument;
Below, with reference to the deposition instrument of Fig. 3 description according to this modification.
Referring to Fig. 3, according to this deposition instrument of this modification is in-line arrangement deposition instrument (in-line deposition apparatus), and thereby be formed with a following shape: wherein be arranged with a plurality of treatment chamber 100a, 100b and 100c and a plurality of transfer chamber 110a, 110b and 110c along a direction.For example, in present embodiment, can be ready for treatment chamber 100 described in Fig. 1 and transfer chamber 110 as along the interconnective a plurality of chambers of a direction.Therefore, utilize the deposition instrument according to this modification, these sedimentary deposits can be formed on the single substrate 200 continuously.In this modification, this in-line arrangement deposition instrument is formed into and comprises three treatment chamber 100a, 100b and 100c and three transfer chamber 110a, 110b and 110c, but the present invention is not limited only to this.That is this in-line arrangement deposition instrument can comprise the treatment chamber and the transfer chamber of varying number.
Referring to Fig. 3, treatment chamber 100a, 100b and 100c comprise sedimentary origin 400a, 400b and 400c respectively.Sedimentary origin 400a, 400b and 400c can store mutually different source material.In addition, respectively this transfer chamber 110a, 110b and 110c are arranged between the two adjacent treatment chamber (for example treatment chamber 100a, 100b and 100c).Thickness measure parts 500a, 500b and 500c are arranged at respectively on the outer wall of bottom of transfer chamber 110a, 110b and 110c.Deposition instrument according to this modification also comprises: a ways 310 is configured in the face of sedimentary origin 400a, 400b and 400c and thickness measure parts 500a, 500b and 500c; One substrate bears parts 300, is connected to ways 310; One shield bracket 320 is connected to the bottom that substrate bears parts 300; One shadow shield 330 is installed in the shield bracket 320; And an auxiliary shield 340, be connected to shield bracket 320 and be configured to an inactive regions 200b corresponding to substrate 200 between the open area of shadow shield 330.One (scheming not shown) is installed on respectively in the space between this treatment chamber 100a, the 100b and 100c and transfer chamber 110a, 110b and one of them corresponding person of 110c.When door is opened, substrate is born parts 300 move in the face of transfer chamber 110a, 110b and one of them corresponding person of 110c or treatment chamber 100a, 100b and one of them corresponding person of 100c.
Fig. 4 is the plane graph of a regional A of the described deposition instrument of Fig. 3.Fig. 5 is the cutaway view along the described line B-B ' intercepting of Fig. 4.Fig. 6 is according to modification of the present invention, the concept map of auxiliary shield 340.
As described in Fig. 4 and Fig. 5, auxiliary shield 340 is configured to the inactive regions 200b corresponding to the substrate between the open area of shadow shield 330 200.Auxiliary shield 340 comprises a shielding pattern 341.Shielding pattern 341 can comprise the pattern of varying number.Referring to Fig. 5, the shielding pattern 341 of auxiliary shield 340 exposes a certain zone of the open area of shadow shield 330.Therefore, in the inactive regions 200b of substrate 200, source material is deposited on the zone that the shielding pattern 341 by auxiliary shield 340 is exposed.As shown in Figure 4, can change the position of the shielding pattern 341 of auxiliary shield 340.Therefore, in the inactive regions 200b of substrate 200, change position by 341 area exposed of shielding pattern.Referring to Fig. 6, gear part 342 is connected to two ends of auxiliary shield 340 along long direction, and a CD-ROM drive motor 343 is connected to gear part 342.Gear part 342 is connected to shield bracket 320 shown in Fig. 3 and the 4th figure.CD-ROM drive motor 343 can comprise the punching press motor that moves that can accurately control auxiliary shield 340 and a micro motor one of them.A plurality of holes (scheming not shown) are arranged at a bottom of auxiliary shield 340, and wherein these holes combine with mobile auxiliary shield 340 with a precision gear of gear part 342.In present embodiment, utilize gear part 342 and CD-ROM drive motor 343 to move auxiliary shield 340, but the present invention is not limited only to this.That is, can utilize the device of the position of any shielding pattern 341 that can change auxiliary shield 340.
When successive sedimentation is stored in source material 401,402 and 403 among sedimentary origin 400a, 400b and the 400c respectively on single substrate 200 time, after utilizing the first sedimentary origin 400a sedimentary derivation material 401, the shielding pattern 341 of mobile auxiliary shield 340.Then, utilize the second sedimentary origin 400b sedimentary derivation material 402.Thus, one first sedimentary deposit that utilizes the first sedimentary origin 400a to form and one second sedimentary deposit that utilizes the second sedimentary origin 400b to form are arranged among the inactive regions 200b of substrate 200 with being separated from each other.
Fig. 7 is utilize a organic light emitting apparatus that the described deposition instrument of Fig. 3 makes graphic.
Hereinafter, with reference to Fig. 3 and Fig. 7 a operation according to the deposition instrument of this modification is described.
At first, determine target thickness and deposition control thickness in monitoring means 140a, 140b and 140c place.Then, in the first substrate lock, 801 moving substrates, 200 to first chamber 100a, and bear substrate 200 and bear on the support 301 of parts 300 in substrate.At this moment, the first sedimentary origin 400a, the second sedimentary origin 400b and the 3rd sedimentary origin 400c store the organic material of different powder type as source material.Shadow shield 330 is installed on and is connected in the shield bracket 320 of bottom that substrate bears parts 300, and auxiliary shield 340 is arranged at and the open area of shadow shield 330 between the corresponding position of inactive regions 200b of substrate 200.The driving shaft 302 that substrate bears parts 300 moves along ways 310, thereby, the support 301 that is connected to driving shaft 302 be positioned at the first sedimentary origin 400a directly over.Then, by heating and evaporating first organic material 401 that is stored among the one first smelting furnace 411a, form sedimentary deposit on substrate 200.In the process that forms this sedimentary deposit, one total amount of one first sensor 600a, first organic material 401 that sensing evaporated in real time and calculate the thickness of one first organic material layer 401a, wherein first sensor 600a is arranged on the inwall of a side of the first chamber 100a.Calculated thickness as if the first organic material layer 401a that is obtained by first sensor 600a reaches this deposition control thickness, and then this deposition procedures stops.By these operations, as shown in Figure 7, the first organic material layer 401a is formed among the active region 200a and inactive regions 200b of substrate 200.Then, the mobile substrate 200 of the first organic material layer 401a that is formed with is to face the first transfer chamber 110a, and utilize the first thickness measure parts 500a measurement to be deposited on the actual (real) thickness of the first organic material layer 401a among the inactive regions 200b of substrate 200, wherein the first thickness measure parts 500a is installed on the outer wall of bottom of the first transfer chamber 110a.Then, a mean value and this target thickness of the actual (real) thickness of the actual (real) thickness of the comparison first organic material layer 401a and this target thickness or the comparison first organic material layer 401a.That is, if enter treatment chamber 100a and be formed with first substrate of the first organic material layer 401a, then relatively be formed at actual (real) thickness and this target thickness of the first organic material layer 401a of this first substrate.In addition, if enter the M substrate (M is an integer) in a plurality of substrates of treatment chamber 100a continuously, wherein the first organic material layer 401a is formed on this M substrate, then relatively be formed at the first organic material layer 401a on these a plurality of substrates actual (real) thickness mean value and be formed at mean value and this target thickness of the actual (real) thickness of the first organic material layer 401a on the M substrate.Then, after revising this deposition control thickness of in monitoring means 140, determining, desire to be formed at the thickness of the first organic material layer 401a of next deposition procedures by this deposition control thickness adjustment of having revised.
Then, in move the substrate 200 be formed with the first organic material layer 401a enter the second treatment chamber 100b and the second transfer chamber 110b, then enter the 3rd treatment chamber 100c and the 3rd transfer chamber 110c again after, repetition performed operation in the first treatment chamber 100a and the first transfer chamber 110a.But, before deposition second organic material 402 and the 3rd organic material 403, by the gear part 342 that is rotatably connected to auxiliary shield 340, with the position of the shielding pattern 341 that changes auxiliary shield 340.That is, as shown in Figure 7, change the position of auxiliary shield 340, in order to do this first organic material layer 401a, one second organic material layer 402a and one the 3rd organic material layer 403a are formed among the inactive regions 200b of substrate 200 with being separated from each other.Then, the substrate 200 that will be formed with the first organic material layer 401a, the second organic material layer 402a and the 3rd organic material layer 403a carries out via the second substrate lock 802.
In present embodiment, although use organic material as source material, yet the present invention is not limited only to this.For example can use various materials such as inorganic material and metal as source material.
As mentioned above,, utilize the deposition instrument that adopts the thickness measure parts, can directly measure and monitor an actual (real) thickness of the sedimentary deposit that is formed on the substrate that deposits a film according to embodiments of the invention.Therefore, be formed at the deposition control thickness that the actual (real) thickness of the sedimentary deposit on this substrate and correction are used to control the actual (real) thickness of this sedimentary deposit, can control the thickness of this sedimentary deposit exactly by monitoring in real time.Therefore, can improve reliability and the yield that is made in the device on this substrate.
Although describe this deposition instrument above with reference to specific embodiment, be not limited in this.Therefore, person skilled in the art person will readily appreciate that, under the condition of spirit of the present invention that does not deviate from appended claims and defined and scope, can make various modifications and change to it.
Claims (16)
1. a deposition instrument is characterized in that, comprises:
One treatment chamber has a reaction compartment in this treatment chamber;
One transfer chamber is connected to this treatment chamber;
One substrate bears parts, is arranged in this treatment chamber, bears a substrate on the parts to bear in this substrate;
One sedimentary origin is in the face of this substrate bears parts and stores a source material;
One thickness measure parts are installed in this transfer chamber, are formed at an actual (real) thickness of the sedimentary deposit on this substrate with direct measurement;
One shield bracket, this shield bracket are connected to the bottom that this substrate bears parts, and wherein a shadow shield is installed in this shield bracket; And
One auxiliary shield, this auxiliary shield comprises at least one shielding pattern, and this auxiliary shield is in the face of a passive zone of this substrate between the open area of this shadow shield.
2. deposition instrument according to claim 1 is characterized in that, these thickness measure parts utilize an oval calibrator.
3. deposition instrument according to claim 2 is characterized in that, a light-passing board is installed on a side that is provided with this ellipse calibrator of this transfer chamber.
4. deposition instrument according to claim 1 is characterized in that, more comprises a transducer, and this transducer is installed on the side in this treatment chamber, with sensing from a total amount of this source material of this sedimentary origin evaporation and calculate a conversion thickness of this sedimentary deposit.
5. deposition instrument according to claim 1, it is characterized in that, most treatment chamber and most transfer chamber are prepared and interconnect along a direction, and respectively this treatment chamber comprises and is installed on one of them sedimentary origin, and respectively this transfer chamber comprises thickness measure parts that are installed on wherein.
6. deposition instrument according to claim 4 is characterized in that, more comprises a monitoring means, and this monitoring means is connected to this transducer, is formed at a thickness of this sedimentary deposit of this substrate with adjustment.
7. deposition instrument according to claim 6 is characterized in that, this monitoring means is connected to these thickness measure parts and a control unit, and this control unit is connected to this sedimentary origin, is supplied to the power and a deposition processes time of this sedimentary origin with control.
8. deposition instrument according to claim 1 is characterized in that, a plurality of driver elements are arranged at two ends of this auxiliary shield, and to change the position of this shielding pattern by mobile this auxiliary shield, these driver elements are connected to this shield bracket.
9. a deposition process is characterized in that, comprises:
Prepare a substrate in a chamber;
Form one first sedimentary deposit on this substrate by depositing a source material;
Move an actual (real) thickness of also directly measuring this first sedimentary deposit in this substrate to one transfer chamber;
Relatively this actual (real) thickness of this first sedimentary deposit and a target thickness;
According to this comparative result, adjust a plurality of treatment conditions;
After adjusting these treatment conditions, deposit different source materials continuously on this substrate by this actual (real) thickness of this first sedimentary deposit is compared with this target thickness;
Wherein, bear parts by a substrate that will bear this substrate and move to along the interconnective a plurality of treatment chamber of a direction at least in one of them, and deposit these different source materials continuously on this substrate; And
Before these different source materials of deposition, change the position of a shielding pattern of an auxiliary shield, with the position of the inactive regions that changes this substrate that this shielding pattern exposed.
10. deposition process according to claim 9 is characterized in that, after adjusting these treatment conditions, forms one second sedimentary deposit under these adjusted treatment conditions.
11. deposition process according to claim 9 is characterized in that, before forming this first sedimentary deposit, also comprises and sets up this target thickness and a deposition control thickness.
12. deposition process according to claim 9 is characterized in that, by during forming this first sedimentary deposit in a total amount of transducer place this source material of sensing, to calculate a conversion thickness of this first sedimentary deposit.
13. deposition process according to claim 12 is characterized in that, when this conversion thickness of this first sedimentary deposit reaches a deposition control thickness, stops this deposition procedures.
14. deposition process according to claim 11 is characterized in that, when adjusting these treatment conditions according to this comparative result, changes this deposition control thickness.
15. deposition process according to claim 9 is characterized in that, this substrate comprises an active region and an inactive regions, and measures this actual (real) thickness that is formed at this first sedimentary deposit in this inactive regions.
16. deposition process according to claim 10 is characterized in that, this actual (real) thickness of this second sedimentary deposit that will form under these adjusted treatment conditions is compared with this target thickness with a mean value of this actual (real) thickness of this first sedimentary deposit.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080087763A KR101018644B1 (en) | 2008-09-05 | 2008-09-05 | Evaporation apparatus and evaporation method the same |
| KR10-2008-0087763 | 2008-09-05 | ||
| PCT/KR2009/004906 WO2010027178A2 (en) | 2008-09-05 | 2009-09-01 | Deposition apparatus and deposition method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102217038A CN102217038A (en) | 2011-10-12 |
| CN102217038B true CN102217038B (en) | 2013-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980135093.6A Expired - Fee Related CN102217038B (en) | 2008-09-05 | 2009-09-01 | Deposition apparatus and deposition method using the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5280542B2 (en) |
| KR (1) | KR101018644B1 (en) |
| CN (1) | CN102217038B (en) |
| TW (1) | TWI410604B (en) |
| WO (1) | WO2010027178A2 (en) |
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| EP2518178B1 (en) * | 2011-04-29 | 2014-01-01 | Applied Materials, Inc. | Tooling carrier for inline coating machine, method of operating thereof and process of coating a substrate |
| DE102011084996A1 (en) * | 2011-10-21 | 2013-04-25 | Robert Bosch Gmbh | Arrangement for coating a substrate |
| KR101394393B1 (en) * | 2012-06-29 | 2014-05-13 | 세메스 주식회사 | Apparatus and method of depositing organic thin film |
| KR101876306B1 (en) * | 2012-07-02 | 2018-07-10 | 주식회사 원익아이피에스 | Substrate Processing System and Controlling Method Therefor |
| WO2014050319A1 (en) * | 2012-09-25 | 2014-04-03 | 株式会社日立ハイテクノロジーズ | Film-forming apparatus and film-forming method |
| KR101435498B1 (en) * | 2012-11-26 | 2014-08-28 | 주식회사 선익시스템 | A Apparatus for Measuring Thickness of Film in In-line Deposition Device and Method thereof |
| KR101478781B1 (en) * | 2012-12-31 | 2015-01-02 | 엘아이지에이디피 주식회사 | Substrate Tray for Thin Layer Deposition and Thin Layer Deposition Equipment Having the Same |
| KR20140105670A (en) * | 2013-02-22 | 2014-09-02 | 삼성디스플레이 주식회사 | Organic film thickness measuring unit and organic film depositing apparatus having the same |
| KR102096049B1 (en) * | 2013-05-03 | 2020-04-02 | 삼성디스플레이 주식회사 | Deposition apparatus, method for manufacturing organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the same |
| JP6270205B2 (en) * | 2014-01-07 | 2018-01-31 | 株式会社アルバック | Organic EL device manufacturing equipment |
| CN105980597A (en) * | 2014-02-04 | 2016-09-28 | 株式会社爱发科 | Thin film production device, mask set, and thin film production method |
| KR101553149B1 (en) * | 2014-03-26 | 2015-09-14 | (주)쎄미시스코 | Apparatus for measuring thickness of a layer |
| CN105405788B (en) * | 2014-09-16 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| KR101737057B1 (en) | 2015-03-23 | 2017-05-18 | 에이피시스템 주식회사 | Thin-film forming apparatus, protective film forming apparatus for use in an organic electronic device and thin-film forming method of using it |
| US10233528B2 (en) | 2015-06-08 | 2019-03-19 | Applied Materials, Inc. | Mask for deposition system and method for using the mask |
| US9702689B2 (en) * | 2015-06-18 | 2017-07-11 | Xerox Corporation | Use of a full width array imaging sensor to measure real time film thicknesses on film manufacturing equipment |
| JP6795337B2 (en) * | 2016-06-29 | 2020-12-02 | 株式会社荏原製作所 | Film thickness signal processing device, polishing device, film thickness signal processing method, and polishing method |
| JP6580105B2 (en) | 2017-10-26 | 2019-09-25 | キヤノントッキ株式会社 | measuring device |
| JP7365878B2 (en) * | 2019-12-06 | 2023-10-20 | 東京エレクトロン株式会社 | Measuring device and method |
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| JP7424927B2 (en) | 2020-06-26 | 2024-01-30 | キヤノントッキ株式会社 | Film thickness measuring device, film forming device, film thickness measuring method, electronic device manufacturing method, program and storage medium |
| KR102595155B1 (en) * | 2021-06-01 | 2023-10-30 | 한국생산기술연구원 | Real time monitoring method and monitoring system for thin film composition ratio depositied on substrates |
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- 2009-09-01 JP JP2011525975A patent/JP5280542B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI410604B (en) | 2013-10-01 |
| WO2010027178A3 (en) | 2010-06-17 |
| JP5280542B2 (en) | 2013-09-04 |
| JP2012502177A (en) | 2012-01-26 |
| KR20100028836A (en) | 2010-03-15 |
| TW201024656A (en) | 2010-07-01 |
| KR101018644B1 (en) | 2011-03-03 |
| WO2010027178A2 (en) | 2010-03-11 |
| CN102217038A (en) | 2011-10-12 |
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