TWI410604B - Deposition apparatus and deposition method using the same - Google Patents

Deposition apparatus and deposition method using the same Download PDF

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TWI410604B
TWI410604B TW98129848A TW98129848A TWI410604B TW I410604 B TWI410604 B TW I410604B TW 98129848 A TW98129848 A TW 98129848A TW 98129848 A TW98129848 A TW 98129848A TW I410604 B TWI410604 B TW I410604B
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deposition
thickness
substrate
deposited
mask
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TW201024656A (en
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Chang Ho Kang
Hyun Goo Kwon
Sung Tae Namgoong
Sung Kwan Son
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Snu Precision Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A transmission chamber connected to the processing chamber, a substrate seating part located in the processing chamber to seat a substrate, a deposition source facing the substrate seating part and storing a source material, and a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate. It is possible to directly measure and monitor the practical thickness of the deposition layer using the deposition apparatus employing the thickness measuring part. Thus, a thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer in real time and correcting the deposition control thickness used to control the practical thickness of the deposition layer, so that the reliability and the yield rate of a device fabricated on the substrate can be improved.

Description

沈積儀器及利用該沈積儀器之沈積方法Deposition instrument and deposition method using the same

本發明係關於一種沈積儀器(deposition apparatus)及利用該沈積儀器之一沈積方法,更具體而言,係關於一種能夠即時地監測沈積於一基板之一層之一實際厚度的沈積儀器及方法。The present invention relates to a deposition apparatus and a deposition method using the deposition apparatus, and more particularly to a deposition apparatus and method capable of instantaneously monitoring the actual thickness of one of the layers deposited on a substrate.

有機發光裝置(organic light emitting device;OLED)係為繼諸如液晶顯示器(liquid crystal display;LCD)及電漿顯示面板(plasma display panel;PDP)等顯示器之後出現之下一代顯示器。An organic light emitting device (OLED) is a next-generation display that appears after displays such as liquid crystal displays (LCDs) and plasma display panels (PDPs).

該有機發光裝置利用以下方案:依序形成一正電極、一有機材料層及一負電極於一基板上,供應一電壓於正電極與負電極之間,以使電子(electron)及電洞(hole)移動至該有機材料層,然後使電子與電洞複合(recombine)而發光。此處,有機材料層通常係利用熱沈積方法形成。一種用於形成該典型有機材料層之傳統沈積儀器係採用一感測器以監測沈積於該基板之一層之一厚度。該感測器被設置成暴露於一沈積源,該沈積源加熱並蒸發一有機材料。藉此,該感測器偵測附著至其之有機材料之一總量,並將該有機材料之總量轉換成沈積於基板之層之厚度。亦即,利用感測器間接地偵測沈積於基板之層之厚度。然而,因該方案係為一種間接方案,而非用於實際量測沈積於基板之層之厚度之一方案,故厚度量測之精確度降低且難以即時地監測沈積於基板之層之一實際厚度。而且,因不存在用於驗證沈積於基板之層之實際厚度之方法,在沈積製程結束後評價裝置之特徵時,可發現厚度缺陷,故此可能降低裝置之良率(yield rate)。The organic light-emitting device adopts the following scheme: sequentially forming a positive electrode, an organic material layer and a negative electrode on a substrate, and supplying a voltage between the positive electrode and the negative electrode to make electrons and holes ( The hole) moves to the organic material layer, and then the electrons and the holes are recombine to emit light. Here, the organic material layer is usually formed by a thermal deposition method. A conventional deposition apparatus for forming the layer of typical organic material employs a sensor to monitor the thickness of one of the layers deposited on the substrate. The sensor is configured to be exposed to a deposition source that heats and vaporizes an organic material. Thereby, the sensor detects a total amount of organic materials attached thereto, and converts the total amount of the organic materials into a thickness of a layer deposited on the substrate. That is, the thickness of the layer deposited on the substrate is indirectly detected by the sensor. However, since the scheme is an indirect scheme rather than one of the thicknesses for actually measuring the thickness of the layer deposited on the substrate, the accuracy of the thickness measurement is lowered and it is difficult to monitor one of the layers deposited on the substrate in real time. thickness. Moreover, since there is no method for verifying the actual thickness of the layer deposited on the substrate, thickness defects can be found when the characteristics of the device are evaluated after the deposition process is completed, so that the yield rate of the device may be lowered.

本發明提供一種沈積儀器,該沈積儀器採用能夠量測沈積於一基板之一層之一實際厚度之一厚度量測部件,以及提供一種利用該沈積儀器之沈積方法。The present invention provides a deposition apparatus using a thickness measuring member capable of measuring one of actual thicknesses of one of layers of a substrate, and a deposition method using the deposition apparatus.

根據一實例性實施例,一種沈積儀器包含:一處理腔室,該處理腔室中具有一反應空間;一傳送腔室,連接至該處理腔室;一基板承放部件,位於該處理腔室中,以於該基板承放部件上承放一基板;一沈積源,面對該基板承放部件並儲存一來源材料;以及一厚度量測部件,安裝於該傳送腔室中,以直接地量測形成於該基板上之一沈積層之一實際厚度。According to an exemplary embodiment, a deposition apparatus includes: a processing chamber having a reaction space therein; a transfer chamber coupled to the processing chamber; and a substrate receiving member located in the processing chamber a substrate is placed on the substrate receiving member; a deposition source facing the substrate receiving member and storing a source material; and a thickness measuring member mounted in the transfer chamber to directly The actual thickness of one of the deposited layers formed on the substrate is measured.

該厚度量測部件可利用一橢圓測厚儀(ellipsometer)。The thickness measuring component can utilize an ellipsometer.

一透光板可安裝於該傳送腔室之設置有該橢圓測厚儀之一側。A light transmissive plate may be mounted on one side of the transfer chamber provided with the elliptical thickness gauge.

該沈積儀器可更包含一感測器,該感測器安裝於該處理腔室內之一側,以感測自該沈積源蒸發之該來源材料之一總量並計算該沈積層之一轉換厚度。The deposition apparatus may further include a sensor mounted on one side of the processing chamber to sense a total amount of the source material evaporated from the deposition source and calculate a conversion thickness of the deposition layer .

可準備複數處理腔室及複數傳送腔室並沿一方向相互連接,各該處理腔室包含安裝於其中之一沈積源,且各該傳送腔室包含安裝於其中之一厚度量測部件。A plurality of processing chambers and a plurality of transfer chambers may be prepared and connected to each other in a direction, each of the processing chambers including one of the deposition sources mounted, and each of the transfer chambers includes a thickness measuring member mounted thereto.

該沈積儀器可更包含一監測單元,該監測單元連接至該感測器,以調整形成於該基板之沈積層之一厚度。The deposition apparatus can further include a monitoring unit coupled to the sensor to adjust a thickness of one of the deposited layers formed on the substrate.

該監測單元可連接至一控制單元,該控制單元係連接至該沈積源,以控制供應至該沈積源之功率及一沈積處理時間。The monitoring unit can be coupled to a control unit that is coupled to the deposition source to control power supplied to the deposition source and a deposition processing time.

該沈積儀器可更包含一遮罩支架(mask holder),該遮罩支架係連接至該基板承放部件之一下部,其中一陰影遮罩(shadow mask)可安裝於該遮罩支架中。The deposition apparatus can further include a mask holder coupled to a lower portion of the substrate receiving member, wherein a shadow mask can be mounted in the mask holder.

該沈積儀器可更包含一輔助遮罩,該輔助遮罩包含至少一遮罩圖案並面對該陰影遮罩之開口區域之間該基板之一被動區域。The deposition apparatus can further include an auxiliary mask comprising at least one mask pattern and facing a passive region of the substrate between the open areas of the shadow mask.

複數驅動單元可設置於該輔助遮罩之二端,以藉由移動該輔助遮罩而改變該遮罩圖案之位置,該等驅動單元係連接至該遮罩支架。A plurality of driving units may be disposed at both ends of the auxiliary mask to change the position of the mask pattern by moving the auxiliary mask, and the driving units are connected to the mask bracket.

根據另一實例性實施例,一種沈積方法包含:準備一基板於一腔室中;藉由沈積一來源材料而形成一第一沈積層於該基板上;移動該基板至一傳送腔室中並直接量測該第一沈積層之一實際厚度;比較該第一沈積層之該實際厚度與一目標厚度;以及根據該比較結果,調整複數處理條件。According to another exemplary embodiment, a deposition method includes: preparing a substrate in a chamber; forming a first deposition layer on the substrate by depositing a source material; moving the substrate into a transfer chamber and Directly measuring an actual thickness of one of the first deposited layers; comparing the actual thickness of the first deposited layer with a target thickness; and adjusting the plurality of processing conditions according to the comparison result.

於調整該等處理條件後,可於該等已調整之處理條件下形成一第二沈積層。After adjusting the processing conditions, a second deposited layer can be formed under the adjusted processing conditions.

於形成該第一沈積層前,該沈積方法可更包含確定該目標厚度及一沈積控制厚度。The deposition method may further include determining the target thickness and a deposition control thickness before forming the first deposition layer.

藉由於形成該第一沈積層過程中於一感測器處感測該來源材料之一總量,可計算該第一沈積層之一轉換厚度。By converting a total amount of the source material at a sensor during formation of the first deposited layer, one of the first deposited layers can be converted to a thickness.

當該第一沈積層之該轉換厚度達到該沈積控制厚度時,可停止該沈積製程。The deposition process may be stopped when the converted thickness of the first deposited layer reaches the deposition control thickness.

當根據該比較結果調整該等處理條件時,可改變該沈積控制厚度。The deposition control thickness can be changed when the processing conditions are adjusted according to the comparison result.

該基板可包含一主動區域及一被動區域,並可量測形成於該被動區域之該第一沈積層之該實際厚度。The substrate may include an active region and a passive region, and may measure the actual thickness of the first deposited layer formed in the passive region.

可將於該等已調整之處理條件下形成之該第二沈積層之該實際厚度與該第一沈積層之該實際厚度之一平均值與該目標厚度相比較。An average of the actual thickness of the second deposited layer formed under the adjusted processing conditions and the actual thickness of the first deposited layer may be compared to the target thickness.

藉由比較該第一沈積層之實際厚度與該目標厚度而調整該等處理條件後,該沈積方法可更包含於該基板上連續沈積不同之來源材料。After adjusting the processing conditions by comparing the actual thickness of the first deposited layer with the target thickness, the deposition method may further comprise continuously depositing different source materials on the substrate.

可藉由將承放該基板之一基板承放部件移動至沿一方向相互連接之複數處理腔室至少其中之一中,連續地沈積該等不同之來源材料於該基板上。The different source materials may be continuously deposited on the substrate by moving a substrate receiving member carrying the substrate to at least one of a plurality of processing chambers interconnected in one direction.

於沈積該等不同之來源材料前,該沈積方法可更包含改變一輔助遮罩之一遮罩圖案之位置,以改變該遮罩圖案所暴露之該基板之該被動區域之位置。The deposition method may further include changing a position of a mask pattern of the auxiliary mask to change a position of the passive region of the substrate exposed by the mask pattern before depositing the different source materials.

以下,將參照附圖詳細說明本發明之具體實施例。然而,本發明可實施為不同之形式,而不應被視為僅限於本文所述之實施例。提供該等實施例旨在使本發明之揭露內容透徹且完整,並向熟習此項技藝者全面傳達本發明之範圍。此外,相同或相似之參考編號表示相同或相似之組成元件,儘管該等參考編號可出現於本發明之不同實施例或圖式中。Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments described herein. The embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention is fully disclosed. In addition, the same or similar reference numerals indicate the same or similar constituent elements, although the reference numerals may appear in different embodiments or drawings of the present invention.

第1圖係為根據本發明之一實施例之一沈積儀器之圖式。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a drawing of a deposition apparatus in accordance with one embodiment of the present invention.

參見第1圖,該沈積儀器包含:一處理腔室100;一傳送腔室110,連接至處理腔室100之一上側部;一基板承放部件300,連接至處理腔室100之一上部之一內壁,其中該基板承放部件300中承放一基板200;一遮罩支架320,連接至基板承放部件300之一下部;一陰影遮罩330,安裝於遮罩支架320內;一沈積源400,被設置成面對基板承放部件300;一厚度量測部件500,安裝於傳送腔室110之一下部之一外壁上;以及一機械手臂(robot arm) 150,安裝於傳送腔室110內以移動處理腔室100內之基板200至傳送腔室110。此外,該沈積儀器包含:一感測器600,設置於處理腔室100之一內側之,以感測自沈積源400蒸發之一來源材料401之一總量;以及一百葉窗(圖未示出),設置於基板承放部件300及沈積源400之間之一空間內。根據本發明之實施例,該沈積儀器更包含:一真空控制部件700,設置於處理腔室100之一側;一第一基板閘801,設置於處理腔室100之一外側壁上;一門(圖未示出),設置於處理腔室100與傳送腔室110之間;以及一第二基板閘802,設置於傳送腔室110之一側壁中。Referring to FIG. 1, the deposition apparatus includes: a processing chamber 100; a transfer chamber 110 connected to an upper side of the processing chamber 100; and a substrate receiving member 300 connected to an upper portion of the processing chamber 100. An inner wall, wherein the substrate receiving member 300 carries a substrate 200; a mask holder 320 is connected to a lower portion of the substrate receiving member 300; a shadow mask 330 is mounted in the mask holder 320; a deposition source 400 disposed to face the substrate receiving member 300; a thickness measuring member 500 mounted on an outer wall of one of the lower portions of the transfer chamber 110; and a robot arm 150 mounted to the transfer chamber The chamber 110 is moved within the chamber 110 to move the chamber 200 into the transfer chamber 110. In addition, the deposition apparatus includes: a sensor 600 disposed on one side of the processing chamber 100 to sense a total amount of one of the source materials 401 evaporated from the deposition source 400; and a louver (not shown) ) is disposed in a space between the substrate receiving member 300 and the deposition source 400. According to an embodiment of the invention, the deposition apparatus further comprises: a vacuum control unit 700 disposed on one side of the processing chamber 100; a first substrate gate 801 disposed on an outer sidewall of the processing chamber 100; Not shown) disposed between the processing chamber 100 and the transfer chamber 110; and a second substrate shutter 802 disposed in one of the side walls of the transfer chamber 110.

處理腔室100大體上形成由為一圓柱形狀或一矩形盒形狀所形成,並包含用於處理基板200之一預定反應空間。儘管於本實施例中處理腔室100係形成為由圓柱形狀或矩形盒形狀所形成,然而本發明不僅限於本實施例。例如,處理腔室100可成形為對應於基板200之一形狀。第一基板閘801形成於處理腔室100之一外側壁上,其中基板200經由第一基板閘801進出處理腔室100。基板閘801可形成於處理腔室100之另一外側壁上。安裝於處理腔室100之真空控制部件700包含:一閘710,與處理腔室100之一側相組合;一管子720,連接至閘710;以及一真空幫浦730,連接至管子720。閘710起到遮蔽或打開處理腔室100之內部之作用,且管子720與真空幫浦730連接至閘710。故,藉由打開閘710及利用真空幫浦730,可對處理腔室100抽真空。The processing chamber 100 is generally formed by a cylindrical shape or a rectangular box shape and includes a predetermined reaction space for processing the substrate 200. Although the processing chamber 100 is formed in a cylindrical shape or a rectangular box shape in the present embodiment, the present invention is not limited to the embodiment. For example, the processing chamber 100 can be shaped to correspond to one of the shapes of the substrate 200. The first substrate gate 801 is formed on one of the outer sidewalls of the processing chamber 100, wherein the substrate 200 enters and exits the processing chamber 100 via the first substrate gate 801. A substrate gate 801 can be formed on the other outer sidewall of the processing chamber 100. The vacuum control unit 700 mounted to the processing chamber 100 includes a gate 710 in combination with one side of the processing chamber 100, a tube 720 coupled to the gate 710, and a vacuum pump 730 coupled to the tube 720. The gate 710 functions to shield or open the interior of the processing chamber 100, and the tube 720 and the vacuum pump 730 are connected to the gate 710. Therefore, the process chamber 100 can be evacuated by opening the gate 710 and utilizing the vacuum pump 730.

基板承放部件300被安裝成連接至處理腔室100之上部之內壁,以支撐進入處理腔室100之基板200。基板承放部件300包含用於支撐基板200之一支架301以及連接至支架301之一上部以旋轉支架301之一驅動軸302。此處,驅動軸302連接至使其旋轉之一動力單元(圖未示出)。The substrate receiving member 300 is mounted to be coupled to an inner wall of the upper portion of the processing chamber 100 to support the substrate 200 entering the processing chamber 100. The substrate receiving member 300 includes a holder 301 for supporting the substrate 200 and an upper portion connected to one of the holders 301 to drive the shaft 302 of one of the rotating holders 301. Here, the drive shaft 302 is coupled to a power unit (not shown) that causes it to rotate.

遮罩支架320連接至基板承放部件300之下部且陰影遮罩330承放於遮罩支架320上。陰影遮罩330係用於使來源材料401圖案化並置於基板200上。The mask holder 320 is attached to the lower portion of the substrate receiving member 300 and the shadow mask 330 is placed on the mask holder 320. A shadow mask 330 is used to pattern the source material 401 and place it on the substrate 200.

沈積源400被設置成面對基板承放部件300且起如下作用:蒸發容納於沈積源400之一內部空間之來源材料401及提供所蒸發之來源材料於基板200之一側上。此處,本實施例之沈積源400係為一點沈積源(spot deposition source),但不僅限於此。亦即,沈積源400可係為一線型沈積源(line type deposition source)。沈積源400包含一熔爐411及用於加熱熔爐411之一加熱器412。熔爐411形成有一形狀,該形狀之上部係為開口的且其內部空間儲存來源材料401。加熱器412設置於熔爐411之一側、一下部或同時設置於該二位置。藉由利用加熱器412加熱熔爐411,可加熱及蒸發儲存於熔爐411之內部空間之來源材料401,例如一有機材料。加熱器412連接至對其供電之一溫度調整單元130。此處,熔爐411之內部空間之溫度係端視自溫度調整單元130供應至加熱器412之功率而改變。溫度調整單元130連接至一控制單元120。控制單元120根據沈積於基板200上之一層之一實際厚度而調整自溫度調整單元130供應至加熱器412之功率。The deposition source 400 is disposed to face the substrate receiving member 300 and functions to evaporate the source material 401 housed in an inner space of the deposition source 400 and to provide the evaporated source material on one side of the substrate 200. Here, the deposition source 400 of the present embodiment is a spot deposition source, but is not limited thereto. That is, the deposition source 400 can be a line type deposition source. The deposition source 400 includes a furnace 411 and a heater 412 for heating the furnace 411. The furnace 411 is formed with a shape having an open upper portion and an inner space for storing the source material 401. The heater 412 is disposed on one side of the furnace 411, at the lower portion or at the same time. By heating the furnace 411 by the heater 412, the source material 401, such as an organic material, stored in the inner space of the furnace 411 can be heated and evaporated. The heater 412 is connected to a temperature adjustment unit 130 that supplies power thereto. Here, the temperature of the internal space of the furnace 411 is changed depending on the power supplied from the temperature adjustment unit 130 to the heater 412. The temperature adjustment unit 130 is connected to a control unit 120. The control unit 120 adjusts the power supplied from the temperature adjustment unit 130 to the heater 412 according to the actual thickness of one of the layers deposited on the substrate 200.

一百葉窗(圖未示出)可更設置於基板承放部件300與沈積源400之間。該百葉窗起到控制已蒸發之來源材料之一傳送路徑之作用。此處,該百葉窗可具有各種各樣之形狀。A louver (not shown) may be further disposed between the substrate receiving member 300 and the deposition source 400. The louver acts to control one of the transport paths of the source material that has evaporated. Here, the louver can have a variety of shapes.

感測器600設置於處理腔室100之一內側,以感測自沈積源400蒸發之來源材料之總量。若來源材料401蒸發,則感測器600會感測到此種蒸發且將該來源材料之總量轉換為一沈積厚度。亦即,計算感測器600所感測之來源材料之總量作為沈積於感測器600之一層之一轉換厚度。因此,當執行該沈積製程時,根據即時地沈積於感測器600之該層之轉換厚度,間接地偵測沈積於基板200上之層之厚度。然而,因感測器600所偵測之沈積於基板200之層之厚度係為自感測器600所感測之來源材料之總量所偵測之一間接厚度,該間接厚度可不同於沈積於基板200上之層之實際厚度。感測器600可係為任何能夠感測自沈積源400蒸發及散發之來源材料之總量之感測器。例如,感測器600可包含一晶體振盪器(crystal oscillator)。A sensor 600 is disposed inside one of the processing chambers 100 to sense the total amount of material from which the deposition source 400 evaporates. If the source material 401 evaporates, the sensor 600 senses such evaporation and converts the total amount of source material to a deposition thickness. That is, the total amount of the source material sensed by the sensor 600 is calculated as one of the layers deposited on one of the sensors 600. Therefore, when the deposition process is performed, the thickness of the layer deposited on the substrate 200 is indirectly detected based on the converted thickness of the layer deposited on the sensor 600 in real time. However, the thickness of the layer deposited on the substrate 200 detected by the sensor 600 is an indirect thickness detected from the total amount of the source material sensed by the sensor 600, and the indirect thickness may be different from the deposition. The actual thickness of the layer on substrate 200. The sensor 600 can be any sensor capable of sensing the total amount of material from which the deposition source 400 evaporates and dissipates. For example, sensor 600 can include a crystal oscillator.

感測器600連接至一監測單元140。監測單元140即時地顯示於執行該沈積製程時所獲得之沈積於感測器600上之層之厚度,並且控制沈積於感測器600上之層之厚度。The sensor 600 is coupled to a monitoring unit 140. The monitoring unit 140 instantly displays the thickness of the layer deposited on the sensor 600 obtained when the deposition process is performed, and controls the thickness of the layer deposited on the sensor 600.

提供欲沈積於基板200上之層之一目標厚度及一沈積控制厚度予監測單元140,該沈積控制厚度係用於控制沈積於感測器600上之層之厚度。監測單元140連接至控制單元120,控制單元120控制供應至沈積源400之功率。於加熱沈積源400並因而沈積來源材料401於基板200上之過程中,感測器600將其自身所感測之來源材料之總量轉換為沈積於感測器600之該層之沈積厚度,並且,若該沈積厚度達到該沈積控制厚度,則沈積製程停止。亦即,若監測單元140發送一信號至控制單元120,則控制單元120控制溫度調整單元130以停止供電給加熱器412,俾停止該沈積製程。A target thickness of a layer to be deposited on the substrate 200 and a deposition control thickness are provided to the monitoring unit 140 for controlling the thickness of the layer deposited on the sensor 600. Monitoring unit 140 is coupled to control unit 120, which controls the power supplied to deposition source 400. In the process of heating the deposition source 400 and thus depositing the source material 401 on the substrate 200, the sensor 600 converts the total amount of the source material sensed by itself into the deposition thickness of the layer deposited on the sensor 600, and If the deposition thickness reaches the deposition control thickness, the deposition process is stopped. That is, if the monitoring unit 140 sends a signal to the control unit 120, the control unit 120 controls the temperature adjustment unit 130 to stop supplying power to the heater 412, and stops the deposition process.

傳送腔室110連接至執行該沈積製程之處理腔室100之一側。傳送腔室110係形成為一圓柱形狀或一矩形盒形狀。儘管在本實施例中,傳送腔室110係形成為圓柱形狀或矩形盒形狀,然而本發明不僅限於本實施例。舉例而言,傳送腔室110可成形為對應於基板200之形狀。第二基板閘802係形成於傳送腔室110之一側壁中,基板200經由第二基板閘802傳送出傳送腔室110。此外,儘管圖未示出,一真空控制單元(圖未示出)連接至該傳送腔室110。該真空控制單元將傳送腔室110內之壓力變為真空或大氣壓。The transfer chamber 110 is connected to one side of the process chamber 100 that performs the deposition process. The transfer chamber 110 is formed in a cylindrical shape or a rectangular box shape. Although in the present embodiment, the transfer chamber 110 is formed in a cylindrical shape or a rectangular box shape, the present invention is not limited to the embodiment. For example, the transfer chamber 110 can be shaped to correspond to the shape of the substrate 200. A second substrate gate 802 is formed in one of the sidewalls of the transfer chamber 110, and the substrate 200 is transported out of the transfer chamber 110 via the second substrate gate 802. Further, although not shown, a vacuum control unit (not shown) is coupled to the transfer chamber 110. The vacuum control unit changes the pressure within the transfer chamber 110 to a vacuum or atmospheric pressure.

機械手臂150設置於處理腔室100內,以移動沈積有來源材料401之基板200至傳送腔室110內。此處,機械手臂150可為任何能夠將處理腔室100內之基板200移動至傳送腔室110之裝置。於本實施例中,機械手臂150利用可伸縮之一天線。利用機械手臂150將設置於處理腔室100內之基板200移動至面對設置於傳送腔室110之下部之外壁上之厚度量測部件500。然後,於基板200承放於機械手臂150上之一狀態下,厚度量測部件500量測沈積於基板200上之層之實際厚度。利用機械手臂150,經由安裝於傳送腔室110之一側壁中之第二基板閘802將基板200排送至外面。A robot arm 150 is disposed within the processing chamber 100 to move the substrate 200 on which the source material 401 is deposited into the transfer chamber 110. Here, the robotic arm 150 can be any device capable of moving the substrate 200 within the processing chamber 100 to the transfer chamber 110. In the present embodiment, the robot arm 150 utilizes one of the telescopic antennas. The substrate 200 disposed in the processing chamber 100 is moved by the robot arm 150 to a thickness measuring member 500 that faces the outer wall of the lower portion of the transfer chamber 110. Then, the thickness measuring member 500 measures the actual thickness of the layer deposited on the substrate 200 in a state in which the substrate 200 is placed on the robot arm 150. The substrate 200 is discharged to the outside via the second substrate shutter 802 mounted in one of the side walls of the transfer chamber 110 by the robot arm 150.

根據本發明之本實施例之沈積儀器包含厚度量測部件500,厚度量測部件500能夠量測沈積於基板200上之層之實際厚度。參見第1圖,厚度量測部件500安裝於傳送腔室110之下部之外壁上。厚度量測部件500直接量測沈積於基板200上之層之厚度,並由此計算該沈積層之實際厚度。根據本實施例之厚度量測部件500係為利用光量測該沈積層之實際厚度之一橢圓測厚儀。該橢圓測厚儀發射光(例如雷射)於一量測目標層上,並分析反射自該量測目標層之一表面之光之偏振之變化,藉此量測該沈積層之厚度。因此,厚度量測部件500包含用於發射光(例如雷射)之一光發射元件511及用於偵測反射自該沈積層之光之一偵測元件512。一第一板521及一第二板522設置於設置有厚度量測部件500之傳送腔室110之下部。第一板521透過發自光發射元件511之光,第二板522則透過自該沈積層朝設置有偵測元件512之位置反射之光。第一板521及第二板522形成一透光材料。被光所照射之一量測點可處於基板200之一被動區域內,並量測沈積於基板200上之層之厚度。為量測厚度,機械手臂150移動基板200,俾使設置於機械手臂150上之基板200之被動區域之位置對應於厚度量測部件500。因此,藉由量測沈積於基板200之被動區域上之一層之一實際厚度,可計算沈積於基板200之一主動區域中之一層之一實際厚度。厚度量測部件500連接至監測單元140。The deposition apparatus according to the embodiment of the present invention includes a thickness measuring part 500 capable of measuring the actual thickness of the layer deposited on the substrate 200. Referring to Fig. 1, the thickness measuring member 500 is mounted on the outer wall of the lower portion of the transfer chamber 110. The thickness measuring member 500 directly measures the thickness of the layer deposited on the substrate 200, and thereby calculates the actual thickness of the deposited layer. The thickness measuring member 500 according to the present embodiment is an elliptical thickness gauge that measures the actual thickness of the deposited layer by light. The elliptical thickness gauge emits light (e.g., a laser) on a measurement target layer and analyzes a change in polarization of light reflected from a surface of the measurement target layer to thereby measure the thickness of the deposition layer. Therefore, the thickness measuring component 500 includes a light emitting element 511 for emitting light (e.g., a laser) and a light detecting element 512 for detecting light reflected from the deposited layer. A first plate 521 and a second plate 522 are disposed under the transfer chamber 110 provided with the thickness measuring member 500. The first plate 521 transmits light emitted from the light-emitting element 511, and the second plate 522 transmits light reflected from the deposition layer toward the position where the detecting element 512 is disposed. The first plate 521 and the second plate 522 form a light transmissive material. One of the measurement points illuminated by the light may be in a passive region of the substrate 200 and measure the thickness of the layer deposited on the substrate 200. To measure the thickness, the robot arm 150 moves the substrate 200 so that the position of the passive region of the substrate 200 disposed on the robot arm 150 corresponds to the thickness measuring member 500. Thus, by measuring the actual thickness of one of the layers deposited on the passive region of the substrate 200, the actual thickness of one of the layers deposited in one of the active regions of the substrate 200 can be calculated. The thickness measuring component 500 is coupled to the monitoring unit 140.

第2圖係為一流程圖,用於闡釋一種利用第1圖所述沈積儀器以控制一沈積層之一厚度之程序;以下,將參照第1圖及第2圖描述利用根據本發明之實施例之沈積儀器控制沈積層之厚度之程序。2 is a flow chart for explaining a procedure for controlling the thickness of one of the deposited layers using the deposition apparatus of FIG. 1; hereinafter, the implementation according to the present invention will be described with reference to FIGS. 1 and 2 A procedure in which the deposition apparatus controls the thickness of the deposited layer.

首先,於步驟S100中,於監測單元140處確定欲沈積之層之目標厚度及該沈積控制厚度。該沈積控制厚度之一初始值等於該目標厚度。然後,於步驟S200中,經由溫度調整單元130供電至加熱器412,且藉由加熱儲存有來源材料401之熔爐411,形成沈積層於基板200上。於步驟S300中,於形成該沈積層之同時,感測器600即時地感測已蒸發之來源材料之總量並計算所感測之來源材料總量作為該沈積層之一轉換厚度。監測單元140即時地顯示該沈積層之該轉換厚度。於步驟S400中,連續比較感測器600所計算之該沈積層之轉換厚度與在監測單元140中所確定之沈積控制厚度,並且若該轉換厚度達到該沈積控制厚度,該沈積製程停止。沈積製程停止後,於步驟S500中,厚度量測部件500量測形成於基板200之該沈積層之實際厚度。此時,於打開設置於處理腔室100與傳送腔室110間之一門(圖未示出)及利用機械手臂150移動基板200至傳送腔室110後,利用厚度量測部件500量測該沈積層之實際厚度,厚度量測部件500係設置於傳送腔室110之下部之外壁上。First, in step S100, the target thickness of the layer to be deposited and the deposition control thickness are determined at the monitoring unit 140. One of the initial values of the deposition control thickness is equal to the target thickness. Then, in step S200, power is supplied to the heater 412 via the temperature adjustment unit 130, and a deposition layer is formed on the substrate 200 by heating the furnace 411 in which the source material 401 is stored. In step S300, while forming the deposited layer, the sensor 600 instantaneously senses the total amount of the evaporated source material and calculates the total amount of the sensed source material as one of the deposited layers to convert the thickness. The monitoring unit 140 instantly displays the converted thickness of the deposited layer. In step S400, the converted thickness of the deposited layer calculated by the sensor 600 is continuously compared with the deposition control thickness determined in the monitoring unit 140, and if the converted thickness reaches the deposition control thickness, the deposition process is stopped. After the deposition process is stopped, in step S500, the thickness measuring component 500 measures the actual thickness of the deposited layer formed on the substrate 200. At this time, after opening a door (not shown) disposed between the processing chamber 100 and the transfer chamber 110 and moving the substrate 200 to the transfer chamber 110 by the robot arm 150, the thickness measuring component 500 measures the sink. The actual thickness of the laminate, the thickness measuring member 500 is disposed on the outer wall of the lower portion of the transfer chamber 110.

接著,於步驟S600中,比較該沈積層之實際厚度與該目標厚度或比較實際厚度之一平均值與該目標厚度。例如,若一第一基板(一沈積層於該第一基板後形成於該第一基板上)進入處理腔室100,則比較形成於該第一基板之沈積層之一實際厚度與該目標厚度。然後,若一沈積層形成於一第二基板上,則比較形成於該第一及第二基板上之該等沈積層之實際厚度之一平均值與該目標厚度。接著,若該等沈積層繼續形成於第三至第十基板上,則比較形成於該第一至第十基板上之該等沈積層之實際厚度之各平均值與每一沈積製程之目標厚度。於本實施例中,計算形成於10個基板上之該等沈積層之實際厚度之各平均值並比較該等平均值與該目標厚度。舉例而言,若一沈積層形成於居於該第十基板之後之一第十一基板上,則比較形成於該第二至第十一基板上之該等沈積層之實際厚度之一平均值與該目標厚度。本發明不僅限於本實施例。因此,可計算形成於不同數量之基板上之該等沈積層之實際厚度之一平均值並將其與該目標厚度相比較。如上所述,於本實施例中,對於每一沈積製程,於步驟S600中比較形成於基板200上之沈積層之實際厚度與該目標厚度或比較該等沈積層之實際厚度之一平均值與該目標厚度後,於步驟S700中修正沈積控制厚度。然後,於步驟S800中,藉由已修正之沈積控制厚度調整形成於下一沈積製程之一沈積層之一厚度。因此,可藉由量測每一沈積製程中形成於基板200上之沈積層之一實際厚度、比較該所量測實際厚度與該沈積控制厚度且修正該沈積控制厚度,形成具有一可靠厚度之一沈積層於基板200上。Next, in step S600, the actual thickness of the deposited layer is compared with the target thickness or an average of one of the actual thicknesses and the target thickness. For example, if a first substrate (formed on the first substrate after the deposition of the first substrate) enters the processing chamber 100, the actual thickness of one of the deposited layers formed on the first substrate is compared with the target thickness. . Then, if a deposition layer is formed on a second substrate, an average value of one of actual thicknesses of the deposition layers formed on the first and second substrates is compared with the target thickness. Then, if the deposited layers are continuously formed on the third to tenth substrates, comparing the average values of the actual thicknesses of the deposited layers formed on the first to tenth substrates with the target thickness of each deposition process . In the present embodiment, the average values of the actual thicknesses of the deposited layers formed on the 10 substrates are calculated and compared with the target average. For example, if a deposition layer is formed on one of the eleventh substrates after the tenth substrate, an average value of one of actual thicknesses of the deposition layers formed on the second to eleventh substrates is compared with The target thickness. The present invention is not limited to the embodiment. Thus, an average of one of the actual thicknesses of the deposited layers formed on a different number of substrates can be calculated and compared to the target thickness. As described above, in the present embodiment, for each deposition process, in step S600, the actual thickness of the deposited layer formed on the substrate 200 is compared with the target thickness or an average of one of the actual thicknesses of the deposited layers is compared with After the target thickness, the deposition control thickness is corrected in step S700. Then, in step S800, the thickness of one of the deposition layers formed in one of the next deposition processes is adjusted by the modified deposition control thickness. Therefore, by measuring the actual thickness of one of the deposited layers formed on the substrate 200 in each deposition process, comparing the measured actual thickness with the deposition control thickness, and modifying the deposition control thickness, the formation has a reliable thickness. A deposition layer is on the substrate 200.

於本實施例中,儘管藉由利用於感測器600處計算之沈積層之轉換厚度以調整形成於基板200上之沈積層之厚度,然而本發明不僅限於本實施例,且無需利用該沈積層之轉換厚度即可控制形成於基板200上之沈積層之厚度。亦即,於監測單元140處確定該目標厚度。然後,藉由供電給加熱器412且加熱熔爐411,形成沈積層於基板200上。於該沈積製程結束後,利用厚度量測部件500量測形成於基板200上之沈積層之實際厚度,並比較該所量測實際厚度與該目標厚度。若該實際厚度不等於該目標厚度,則改變處理條件,例如沈積速度及供應至加熱器412之功率。然後,於下一製程中,於該等已改變之處理條件下形成沈積層。In the present embodiment, although the thickness of the deposited layer formed on the substrate 200 is adjusted by utilizing the converted thickness of the deposited layer calculated at the sensor 600, the present invention is not limited to the embodiment, and it is not necessary to utilize the sink. The thickness of the deposited layer formed on the substrate 200 can be controlled by the thickness of the laminate. That is, the target thickness is determined at the monitoring unit 140. Then, a deposition layer is formed on the substrate 200 by supplying power to the heater 412 and heating the furnace 411. After the deposition process is completed, the actual thickness of the deposited layer formed on the substrate 200 is measured by the thickness measuring component 500, and the measured actual thickness and the target thickness are compared. If the actual thickness is not equal to the target thickness, processing conditions such as deposition speed and power supplied to the heater 412 are changed. Then, in the next process, a deposited layer is formed under the changed processing conditions.

第3圖係為根據第1圖所述實施例之一變型,一沈積儀器之一主要部件之示意圖;以下,將參照第3圖描述根據該變型之沈積儀器。Fig. 3 is a schematic view showing a main part of a deposition apparatus according to a modification of the embodiment shown in Fig. 1. Hereinafter, a deposition apparatus according to this modification will be described with reference to Fig. 3.

參見第3圖,根據該變型之該沈積儀器係為一直列式沈積儀器(in-line deposition apparatus),並因而形成有一如下形狀:其中沿一方向排列有複數處理腔室100a、100b及100c及複數傳送腔室110a、110b及110c。例如,於本實施例中,可準備於1圖中所描述之處理腔室100及傳送腔室110作為沿一方向相互連接之複數腔室。因此,利用根據該變型之沈積儀器,該等沈積層可連續形成於單一基板200上。於該變型中,該直列式沈積儀器被製成為包含三處理腔室100a、100b及100c及三傳送腔室110a、110b及110c,但是本發明不僅限於此。亦即,該直列式沈積儀器可包含不同數量之處理腔室及傳送腔室。Referring to FIG. 3, the deposition apparatus according to the modification is an in-line deposition apparatus, and thus formed into a shape in which a plurality of processing chambers 100a, 100b, and 100c are arranged in one direction and The plurality of transfer chambers 110a, 110b, and 110c. For example, in the present embodiment, the processing chamber 100 and the transfer chamber 110 described in FIG. 1 can be prepared as a plurality of chambers interconnected in one direction. Therefore, with the deposition apparatus according to this modification, the deposition layers can be continuously formed on the single substrate 200. In this variation, the in-line deposition apparatus is fabricated to include three processing chambers 100a, 100b, and 100c and three transfer chambers 110a, 110b, and 110c, but the present invention is not limited thereto. That is, the inline deposition apparatus can include a different number of processing chambers and transfer chambers.

參見第3圖,處理腔室100a、100b及100c分別包含沈積源400a、400b及400c。沈積源400a、400b及400c可儲存互不相同之來源材料。此外,各該傳送腔室110a、110b及110c設置於二相鄰處理腔室(例如處理腔室100a、100b及100c)之間。厚度量測部件500a、500b及500c分別設置於傳送腔室110a、110b及110c之下部之外壁上。根據該變型之沈積儀器更包含:一導向構件310,被設置成面對沈積源400a、400b及400c及厚度量測部件500a、500b及500c;一基板承放部件300,連接至導向構件310;一遮罩支架320,連接至基板承放部件300之一下部;一陰影遮罩330,安裝於遮罩支架320內;以及一輔助遮罩340,連接至遮罩支架320且被設置成對應於陰影遮罩330之開口區域之間基板200之一被動區域200b。一門(圖未示出)安裝於各該處理腔室100a、100b及100c與傳送腔室110a、110b及110c其中之一對應者之間之一空間中。當門打開時,將基板承放部件300移動至面對傳送腔室110a、110b及110c其中之一對應者或處理腔室100a、100b及100c其中之一對應者。Referring to Figure 3, processing chambers 100a, 100b, and 100c include deposition sources 400a, 400b, and 400c, respectively. The deposition sources 400a, 400b, and 400c can store source materials different from each other. Further, each of the transfer chambers 110a, 110b, and 110c is disposed between two adjacent processing chambers (e.g., processing chambers 100a, 100b, and 100c). The thickness measuring members 500a, 500b, and 500c are respectively disposed on the outer walls of the lower portions of the transfer chambers 110a, 110b, and 110c. The deposition apparatus according to the modification further includes: a guiding member 310 disposed to face the deposition sources 400a, 400b and 400c and the thickness measuring members 500a, 500b and 500c; a substrate receiving member 300 coupled to the guiding member 310; A mask holder 320 is coupled to a lower portion of the substrate receiving member 300; a shadow mask 330 mounted in the mask holder 320; and an auxiliary mask 340 coupled to the mask holder 320 and configured to correspond to One of the passive regions 200b of the substrate 200 is between the open areas of the shadow mask 330. A door (not shown) is mounted in a space between each of the processing chambers 100a, 100b, and 100c and one of the transfer chambers 110a, 110b, and 110c. When the door is opened, the substrate receiving member 300 is moved to correspond to one of the transfer chambers 110a, 110b, and 110c or one of the processing chambers 100a, 100b, and 100c.

導向構件310起到使承放基板200之基板承放部件300移動至面對各該處理腔室100a、100b及100c及各該傳送腔室110a、110b及110c。此處,導向構件310形成有對應於沈積源400a、400b及400c及厚度量測部件500a、500b及500c之一排列方向之一形狀。因此,連接至導向構件310之基板承放部件300可沿導向構件310移動至面對各該處理腔室100a、100b及100c及各該傳送腔室110a、110b及110c。The guiding member 310 serves to move the substrate receiving member 300 of the receiving substrate 200 to face the processing chambers 100a, 100b, and 100c and the respective transfer chambers 110a, 110b, and 110c. Here, the guide member 310 is formed in a shape corresponding to one of the deposition sources 400a, 400b, and 400c and one of the thickness measuring members 500a, 500b, and 500c. Therefore, the substrate receiving member 300 connected to the guiding member 310 can be moved along the guiding member 310 to face each of the processing chambers 100a, 100b, and 100c and each of the transfer chambers 110a, 110b, and 110c.

第4圖係為第3圖所述沈積儀器之一區域A之平面圖。第5圖係為沿第4圖所述之線B-B’截取之剖視圖。第6圖係為根據本發明之變型,輔助遮罩340之概念圖。Figure 4 is a plan view of a region A of one of the deposition apparatus described in Figure 3. Fig. 5 is a cross-sectional view taken along line B-B' shown in Fig. 4. Figure 6 is a conceptual diagram of an auxiliary mask 340 in accordance with a variation of the present invention.

如第4圖及第5圖所述,輔助遮罩340被設置成對應於陰影遮罩330之閉口區域之間之基板200之被動區域200b。輔助遮罩340包含一遮罩圖案341。遮罩圖案341可包含不同數量之圖案。參見第5圖,輔助遮罩340之遮罩圖案341暴露出陰影遮罩330之開口區域之某一區域。因此,於基板200之被動區域200b中,來源材料沈積於由輔助遮罩340之遮罩圖案341所暴露之一區域。如第4圖所示,可改變輔助遮罩340之遮罩圖案341之位置。因此,於基板200之被動區域200b中,改變由遮罩圖案341所暴露之區域之位置。參見第6圖,齒輪構件342沿一較長之方向連接至輔助遮罩340之二端,且一驅動馬達343連接至齒輪構件342。齒輪構件342如第3圖及第4圖所示連接至遮罩支架320。驅動馬達343可包含能精確地控制輔助遮罩340之移動之一沖壓馬達及一微動馬達其中之一。複數孔(圖未示出)設置於輔助遮罩340之一下部,其中該等孔與齒輪構件342之一精密齒輪相結合以移動輔助遮罩340。於本實施例中,利用齒輪構件342及驅動馬達343移動輔助遮罩340,但本發明不僅限於此。亦即,可利用任何能夠改變輔助遮罩340之遮罩圖案341之位置之裝置。As shown in FIGS. 4 and 5, the auxiliary mask 340 is disposed to correspond to the passive region 200b of the substrate 200 between the closed regions of the shadow mask 330. The auxiliary mask 340 includes a mask pattern 341. The mask pattern 341 can include a different number of patterns. Referring to FIG. 5, the mask pattern 341 of the auxiliary mask 340 exposes an area of the open area of the shadow mask 330. Thus, in the passive region 200b of the substrate 200, the source material is deposited in a region exposed by the mask pattern 341 of the auxiliary mask 340. As shown in FIG. 4, the position of the mask pattern 341 of the auxiliary mask 340 can be changed. Therefore, in the passive region 200b of the substrate 200, the position of the region exposed by the mask pattern 341 is changed. Referring to Fig. 6, the gear member 342 is coupled to the two ends of the auxiliary shroud 340 in a longer direction, and a drive motor 343 is coupled to the gear member 342. The gear member 342 is coupled to the mask holder 320 as shown in FIGS. 3 and 4. The drive motor 343 can include one of a stamping motor and a micro-motor that can precisely control the movement of the auxiliary mask 340. A plurality of apertures (not shown) are disposed in a lower portion of one of the auxiliary shields 340, wherein the apertures are combined with one of the precision gears of the gear member 342 to move the auxiliary mask 340. In the present embodiment, the auxiliary mask 340 is moved by the gear member 342 and the drive motor 343, but the present invention is not limited thereto. That is, any means capable of changing the position of the mask pattern 341 of the auxiliary mask 340 can be utilized.

當連續沈積分別儲存於沈積源400a、400b及400c中之來源材料401、402及403於單一基板200上時,於利用第一沈積源400a沈積來源材料401後,移動輔助遮罩340之遮罩圖案341。然後,利用第二沈積源400b沈積來源材料402。如此一來,將利用第一沈積源400a形成之一第一沈積層與利用第二沈積源400b形成之一第二沈積層相互分離地設置於基板200之被動區域200b中。When the source materials 401, 402, and 403 respectively stored in the deposition sources 400a, 400b, and 400c are successively deposited on the single substrate 200, after the source material 401 is deposited by the first deposition source 400a, the mask of the auxiliary mask 340 is moved. Pattern 341. Source material 402 is then deposited using second deposition source 400b. As such, one of the first deposition layers formed using the first deposition source 400a and the second deposition layer formed by the second deposition source 400b are disposed apart from each other in the passive region 200b of the substrate 200.

第7圖係為利用第3圖所述之沈積儀器製成之一有機發光裝置之圖式。Figure 7 is a diagram of an organic light-emitting device fabricated using the deposition apparatus described in Figure 3.

下文,將參照第3圖及第7圖描述根據該變型之沈積儀器之一操作。Hereinafter, an operation of one of the deposition apparatuses according to this modification will be described with reference to FIGS. 3 and 7.

首先,於監測單元140a、140b及140c處確定目標厚度及沈積控制厚度。然後,經由第一基板閘801移動基板200至第一腔室100a內,且承放基板200於基板承放部件300之支架301上。此時,第一沈積源400a、第二沈積源400b及第三沈積源400c儲存不同之粉末類型之有機材料作為來源材料。陰影遮罩330安裝於連接至基板承放部件300之下部之遮罩支架320中,且輔助遮罩340設置於與陰影遮罩330之開口區域之間基板200之被動區域200b相對應之位置。基板承放部件300之驅動軸302沿導向構件310移動,因而,連接至驅動軸302之支架301位於第一沈積源400a之正上方。然後,藉由加熱及蒸發儲存於一第一熔爐411a中之第一有機材料401,形成沈積層於基板200上。於形成該沈積層之過程中,一第一感測器600a即時地感測所蒸發之第一有機材料401之一總量及計算一第一有機材料層401a之一厚度,其中第一感測器600a設置於第一腔室100a之一側之一內壁上。若藉由第一感測器600a所獲得之第一有機材料層401a之計算厚度達到該沈積控制厚度,則該沈積製程停止。藉由該等製程,如第7圖所示,第一有機材料層401a形成於基板200之一主動區域200a及被動區域200b中。然後,移動形成有第一有機材料層401a之基板200以面對第一傳送腔室110a,且利用第一厚度量測部件500a量測沈積於基板200之被動區域200b中之第一有機材料層401a之一實際厚度,其中第一厚度量測部件500a安裝於第一傳送腔室110a之下部之外壁上。接著,比較第一有機材料層401a之實際厚度與該目標厚度或比較第一有機材料層401a之實際厚度之一平均值與該目標厚度。亦即,若為進入處理腔室100a且形成有第一有機材料層401a之第一基板,則比較形成於該第一基板之第一有機材料層401a之實際厚度與該目標厚度。此外,若為連續進入處理腔室100a之複數基板中之一第M基板(M係為一整數),其中第一有機材料層401a形成於該第M基板上,則比較形成於該複數基板上之第一有機材料層401a之實際厚度之平均值及形成於第M基板上之第一有機材料層401a之實際厚度之平均值與該目標厚度。然後,於修正在監測單元140中確定之該沈積控制厚度後,藉由該已修正之沈積控制厚度調整欲形成於下一沈積製程之第一有機材料層401a之一厚度。First, the target thickness and the deposition control thickness are determined at the monitoring units 140a, 140b, and 140c. Then, the substrate 200 is moved into the first chamber 100a via the first substrate gate 801, and the substrate 200 is placed on the holder 301 of the substrate receiving member 300. At this time, the first deposition source 400a, the second deposition source 400b, and the third deposition source 400c store organic materials of different powder types as source materials. The shadow mask 330 is mounted in the mask holder 320 connected to the lower portion of the substrate receiving member 300, and the auxiliary mask 340 is disposed at a position corresponding to the passive region 200b of the substrate 200 between the open areas of the shadow mask 330. The drive shaft 302 of the substrate receiving member 300 moves along the guide member 310, and thus, the bracket 301 connected to the drive shaft 302 is located directly above the first deposition source 400a. Then, a deposition layer is formed on the substrate 200 by heating and evaporating the first organic material 401 stored in a first furnace 411a. In the process of forming the deposited layer, a first sensor 600a instantaneously senses a total amount of the evaporated first organic material 401 and calculates a thickness of one of the first organic material layers 401a, wherein the first sensing The device 600a is disposed on an inner wall of one of the sides of the first chamber 100a. If the calculated thickness of the first organic material layer 401a obtained by the first sensor 600a reaches the deposition control thickness, the deposition process is stopped. By the processes, as shown in FIG. 7, the first organic material layer 401a is formed in one of the active region 200a and the passive region 200b of the substrate 200. Then, the substrate 200 formed with the first organic material layer 401a is moved to face the first transfer chamber 110a, and the first organic material layer deposited in the passive region 200b of the substrate 200 is measured by the first thickness measuring member 500a. One of the actual thicknesses of 401a, wherein the first thickness measuring member 500a is mounted on the outer wall of the lower portion of the first transfer chamber 110a. Next, the actual thickness of the first organic material layer 401a is compared with the target thickness or an average of one of the actual thicknesses of the first organic material layer 401a is compared with the target thickness. That is, if it is the first substrate that enters the processing chamber 100a and is formed with the first organic material layer 401a, the actual thickness of the first organic material layer 401a formed on the first substrate is compared with the target thickness. In addition, if the M substrate (M is an integer) in the plurality of substrates continuously entering the processing chamber 100a, wherein the first organic material layer 401a is formed on the M substrate, the comparison is formed on the plurality of substrates. The average value of the actual thickness of the first organic material layer 401a and the average thickness of the actual thickness of the first organic material layer 401a formed on the Mth substrate are the target thickness. Then, after modifying the deposition control thickness determined in the monitoring unit 140, the thickness of one of the first organic material layers 401a to be formed in the next deposition process is adjusted by the modified deposition control thickness.

接著,於移動形成有第一有機材料層401a之基板200進入第二處理腔室100b及第二傳送腔室110b、接著再進入第三處理腔室100c及第三傳送腔室110c後,重複在第一處理腔室100a及第一傳送腔室110a中所執行之製程。但是,於沈積第二有機材料402及第三有機材料403前,藉由旋轉連接至輔助遮罩340之齒輪構件342,以改變輔助遮罩340之遮罩圖案341之位置。亦即,如第7圖所示,改變輔助遮罩340之位置,俾使該第一有機材料層401a、一第二有機材料層402a及一第三有機材料層403a相互分離地形成於基板200之被動區域200b中。然後,將形成有第一有機材料層401a、第二有機材料層402a及第三有機材料層403a之基板200經由第二基板閘802載送出。Then, after moving the substrate 200 on which the first organic material layer 401a is formed into the second processing chamber 100b and the second transfer chamber 110b, and then entering the third processing chamber 100c and the third transfer chamber 110c, repeating The process performed in the first processing chamber 100a and the first transfer chamber 110a. However, before the deposition of the second organic material 402 and the third organic material 403, the position of the mask pattern 341 of the auxiliary mask 340 is changed by rotationally connecting the gear member 342 of the auxiliary mask 340. That is, as shown in FIG. 7, the position of the auxiliary mask 340 is changed, and the first organic material layer 401a, the second organic material layer 402a, and the third organic material layer 403a are formed on the substrate 200 separately from each other. In the passive area 200b. Then, the substrate 200 on which the first organic material layer 401a, the second organic material layer 402a, and the third organic material layer 403a are formed is carried out via the second substrate gate 802.

根據該變型之沈積源400a、400b及400c係利用一點沈積源,但是本發明不僅限於此,亦即,沈積源400a、400b及400c亦可利用一直線型沈積源。厚度量測部件500藉由改變該有機材料層之量測點之位置,多次量測該有機材料層之厚度。藉此,相互比較在量測點之不同位置所量測之有機材料層之厚度。因此,無論構成該直線型沈積源之每一開口是否閉合以及無論沈積速率如何,皆可驗證形成於基板200上之沈積層之均勻性。The deposition sources 400a, 400b, and 400c according to this modification utilize a one-point deposition source, but the present invention is not limited thereto, that is, the deposition sources 400a, 400b, and 400c may also utilize a linear deposition source. The thickness measuring component 500 measures the thickness of the organic material layer a plurality of times by changing the position of the measuring point of the organic material layer. Thereby, the thickness of the organic material layer measured at different positions of the measurement points is compared with each other. Therefore, the uniformity of the deposited layer formed on the substrate 200 can be verified regardless of whether or not each opening constituting the linear deposition source is closed and regardless of the deposition rate.

於本實施例中,儘管使用有機材料作為來源材料,然而本發明不僅限於此。可使用例如無機材料及金屬等各種各樣之材料作為來源材料。In the present embodiment, although an organic material is used as the source material, the present invention is not limited thereto. A variety of materials such as inorganic materials and metals can be used as the source material.

如上所述,根據本發明之實施例,利用採用厚度量測部件之沈積儀器,可直接量測及監測形成於沈積有一薄膜之基板上之沈積層之一實際厚度。因此,藉由即時地監測形成於該基板上之沈積層之實際厚度及修正用於控制該沈積層之實際厚度之沈積控制厚度,可準確地控制該沈積層之厚度。因此,可提高製作於該基板上之器件之可靠性及良率。As described above, according to an embodiment of the present invention, the actual thickness of one of the deposited layers formed on the substrate on which the thin film is deposited can be directly measured and monitored by using a deposition apparatus using a thickness measuring member. Therefore, the thickness of the deposited layer can be accurately controlled by instantly monitoring the actual thickness of the deposited layer formed on the substrate and correcting the deposition control thickness for controlling the actual thickness of the deposited layer. Therefore, the reliability and yield of the device fabricated on the substrate can be improved.

儘管上文參照具體實施例描述該沈積儀器,但並不僅限於此。因此,熟習此項技藝者將容易理解,於不背離隨附申請專利範圍所界定之本發明之精神及範圍之條件下,可對其作出各種各樣之修改及改動。Although the deposition apparatus is described above with reference to specific embodiments, it is not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made thereto without departing from the spirit and scope of the invention as defined by the appended claims.

100...處理腔室100. . . Processing chamber

100a...處理腔室100a. . . Processing chamber

100b...處理腔室100b. . . Processing chamber

100c...處理腔室100c. . . Processing chamber

110...傳送腔室110. . . Transfer chamber

110a...傳送腔室110a. . . Transfer chamber

110b...傳送腔室110b. . . Transfer chamber

110c...傳送腔室110c. . . Transfer chamber

120...控制單元120. . . control unit

130...溫度調整單元130. . . Temperature adjustment unit

140...監測單元140. . . Monitoring unit

140a...監測單元140a. . . Monitoring unit

140b...監測單元140b. . . Monitoring unit

140c...監測單元140c. . . Monitoring unit

150...機械手臂150. . . Mechanical arm

200...基板200. . . Substrate

200a...主動區域200a. . . Active area

200b...被動區域200b. . . Passive zone

300...基板承放部件300. . . Substrate receiving component

301...支架301. . . support

302...驅動軸302. . . Drive shaft

310...導向構件310. . . Guide member

320...遮罩支架320. . . Mask bracket

330...陰影遮罩330. . . Shadow mask

340...輔助遮罩340. . . Auxiliary mask

341...遮罩圖案341. . . Mask pattern

342...齒輪構件342. . . Gear member

343...驅動馬達343. . . Drive motor

400...沈積源400. . . Sedimentary source

400a...沈積源400a. . . Sedimentary source

400b...沈積源400b. . . Sedimentary source

400c...沈積源400c. . . Sedimentary source

401...來源材料401. . . Source material

401a...第一有機材料層401a. . . First organic material layer

402...來源材料402. . . Source material

402a...第二有機材料層402a. . . Second organic material layer

403...來源材料403. . . Source material

403a...第三有機材料層403a. . . Third organic material layer

411...熔爐411. . . furnace

411a...第一熔爐411a. . . First furnace

412...加熱器412. . . Heater

500...厚度量測部件500. . . Thickness measuring part

500a...厚度量測部件500a. . . Thickness measuring part

500b...厚度量測部件500b. . . Thickness measuring part

500c...厚度量測部件500c. . . Thickness measuring part

511...光發射元件511. . . Light emitting element

512...偵測元件512. . . Detection component

521...第一板521. . . First board

522...第二板522. . . Second board

600...感測器600. . . Sensor

600a...第一感測器600a. . . First sensor

700...真空控制部件700. . . Vacuum control unit

710...閘710. . . brake

720...管子720. . . tube

730...真空幫浦730. . . Vacuum pump

801...第一基板閘801. . . First substrate gate

802...第二基板閘802. . . Second substrate gate

B-B’...線B-B’. . . line

結合附圖閱讀上文之說明,可更詳盡地理解本發明之實例性實施例,附圖中:Exemplary embodiments of the present invention can be understood in more detail by reading the above description in conjunction with the accompanying drawings.

第1圖係為根據本發明之一實施例之一沈積儀器之圖式;1 is a diagram of a deposition apparatus according to an embodiment of the present invention;

第2圖係為一流程圖,用於闡釋一種利用第1圖所述沈積儀器以控制一沈積層之一厚度之程序;Figure 2 is a flow chart for explaining a procedure for controlling the thickness of a deposited layer using the deposition apparatus of Figure 1;

第3圖係為根據第1圖所述實施例之一變型,一沈積儀器之一主要部件之示意圖;Figure 3 is a schematic view showing a main part of a deposition apparatus according to a modification of the embodiment shown in Figure 1;

第4圖係為第3圖所述沈積儀器之一區域A之平面圖;Figure 4 is a plan view of a region A of one of the deposition instruments described in Figure 3;

第5圖係為沿第4圖所述之線B-B’截取之剖視圖;Figure 5 is a cross-sectional view taken along line B-B' of Figure 4;

第6圖係為根據第3圖所述之變型,一輔助遮罩之概念圖;以及Figure 6 is a conceptual diagram of an auxiliary mask according to the variant described in Figure 3;

第7圖係為利用第3圖所述之沈積儀器製成之一有機發光裝置之圖式。Figure 7 is a diagram of an organic light-emitting device fabricated using the deposition apparatus described in Figure 3.

100...處理腔室100. . . Processing chamber

110...傳送腔室110. . . Transfer chamber

120...控制單元120. . . control unit

130...溫度調整單元130. . . Temperature adjustment unit

140...監測單元140. . . Monitoring unit

150...機械手臂150. . . Mechanical arm

200...基板200. . . Substrate

300...基板承放部件300. . . Substrate receiving component

301...支架301. . . support

302...驅動軸302. . . Drive shaft

320...遮罩支架320. . . Mask bracket

330...陰影遮罩330. . . Shadow mask

342...齒輪構件342. . . Gear member

400...沈積源400. . . Sedimentary source

401...來源材料401. . . Source material

411...熔爐411. . . furnace

412...加熱器412. . . Heater

500...厚度量測部件500. . . Thickness measuring part

511...光發射元件511. . . Light emitting element

512...偵測元件512. . . Detection component

521...第一板521. . . First board

522...第二板522. . . Second board

600...感測器600. . . Sensor

700...真空控制部件700. . . Vacuum control unit

710...閘710. . . brake

720...管子720. . . tube

730...真空幫浦730. . . Vacuum pump

801...第一基板閘801. . . First substrate gate

802...第二基板閘802. . . Second substrate gate

Claims (20)

一種沈積儀器,包含:一處理腔室,該處理腔室中具有一反應空間;一傳送腔室,連接至該處理腔室;一基板承放部件,位於該處理腔室中,以於該基板承放部件上承放一基板;一沈積源,面對該基板承放部件並儲存一來源材料;一厚度量測部件,安裝於該傳送腔室中,以直接量測形成於該基板上之一沈積層之一實際厚度;以及一感測器,安裝於該處理腔室內之一側,以感測自該沈積源蒸發之該來源材料之一總量,並計算該沈積層之一轉換厚度。 A deposition apparatus comprising: a processing chamber having a reaction space; a transfer chamber coupled to the processing chamber; and a substrate receiving member located in the processing chamber for the substrate a substrate is disposed on the receiving component; a deposition source faces the substrate receiving component and stores a source material; a thickness measuring component is installed in the transfer chamber to directly measure the formed on the substrate a physical thickness of one of the deposited layers; and a sensor mounted on one side of the processing chamber to sense a total amount of the source material evaporated from the deposition source, and calculate a converted thickness of the deposited layer . 如請求項1所述之沈積儀器,其中該厚度量測部件係利用一橢圓測厚儀(ellipsometer)。 The deposition apparatus of claim 1, wherein the thickness measuring component utilizes an ellipsometer. 如請求項2所述之沈積儀器,其中一透光板係安裝於該傳送腔室之設置有該橢圓測厚儀之一側。 The deposition apparatus of claim 2, wherein a light transmissive plate is mounted on one side of the transfer chamber provided with the elliptical thickness gauge. 如請求項1所述之沈積儀器,其中準備複數處理腔室及複數傳送腔室並沿一方向相互連接,各該處理腔室包含安裝於其中之一沈積源,且各該傳送腔室包含安裝於其中之一厚度量測部件。 The deposition apparatus of claim 1, wherein the plurality of processing chambers and the plurality of transfer chambers are prepared and connected to each other in a direction, each of the processing chambers including one of the deposition sources installed, and each of the transfer chambers includes the mounting One of the thickness measurement components. 如請求項1所述之沈積儀器,更包含一監測單元,該監測單元連接至該感測器,以調整形成於該基板之該沈積層之一厚度。 The deposition apparatus of claim 1, further comprising a monitoring unit coupled to the sensor to adjust a thickness of one of the deposited layers formed on the substrate. 如請求項5所述之沈積儀器,其中該監測單元係連接至該厚 度量測部件及一控制單元,該控制單元係連接至該沈積源,以控制供應至該沈積源之功率及一沈積處理時間。 The deposition apparatus of claim 5, wherein the monitoring unit is connected to the thickness And a control unit coupled to the deposition source to control power supplied to the deposition source and a deposition processing time. 如請求項1所述之沈積儀器,更包含一遮罩支架,該遮罩支架係連接至該基板承放部件之一下部,其中一陰影遮罩安裝於該遮罩支架中。 The deposition apparatus of claim 1, further comprising a mask holder attached to a lower portion of the substrate receiving member, wherein a shadow mask is mounted in the mask holder. 如請求項7所述之沈積儀器,更包含一輔助遮罩,該輔助遮罩包含至少一遮罩圖案並面對該陰影遮罩之開口區域之間該基板之一被動區域。 The deposition apparatus of claim 7, further comprising an auxiliary mask comprising at least one mask pattern and facing a passive region of the substrate between the open areas of the shadow mask. 如請求項8所述之沈積儀器,其中複數驅動單元設置於該輔助遮罩之二端,以藉由移動該輔助遮罩而改變該遮罩圖案之位置,該等驅動單元係連接至該遮罩支架。 The deposition apparatus of claim 8, wherein a plurality of driving units are disposed at two ends of the auxiliary mask to change a position of the mask pattern by moving the auxiliary mask, the driving units being connected to the mask Cover bracket. 一種沈積方法,包含:準備一基板於一腔室中;藉由沈積一來源材料而形成一第一沈積層於該基板上;移動該基板至一傳送腔室中並直接量測該第一沈積層之一實際厚度;比較該第一沈積層之該實際厚度與一目標厚度;以及根據該比較結果,調整複數處理條件。 A deposition method comprising: preparing a substrate in a chamber; forming a first deposition layer on the substrate by depositing a source material; moving the substrate into a transfer chamber and directly measuring the first sink One of the actual thicknesses of the laminate; comparing the actual thickness of the first deposited layer with a target thickness; and adjusting the complex processing conditions based on the comparison. 如請求項10所述之沈積方法,其中,於調整該等處理條件後,於該等已調整之處理條件下形成一第二沈積層。 The deposition method of claim 10, wherein after adjusting the processing conditions, a second deposited layer is formed under the adjusted processing conditions. 如請求項10所述之沈積方法,其中,於形成該第一沈積層前,更包含建立該目標厚度及一沈積控制厚度。 The deposition method of claim 10, further comprising establishing the target thickness and a deposition control thickness before forming the first deposition layer. 如請求項10所述之沈積方法,其中藉由於形成該第一沈積層期間於一感測器處感測該來源材料之一總量,以計算該第一 沈積層之一轉換厚度。 The deposition method of claim 10, wherein the first quantity is calculated by sensing a total amount of the source material at a sensor during formation of the first deposition layer One of the deposited layers converts the thickness. 如請求項13所述之沈積方法,其中當該第一沈積層之該轉換厚度達到一沈積控制厚度時,停止該沈積製程。 The deposition method of claim 13, wherein the deposition process is stopped when the converted thickness of the first deposited layer reaches a deposition control thickness. 如請求項12及14中任一項所述之沈積方法,其中當根據該比較結果調整該等處理條件時,改變該沈積控制厚度。 The deposition method according to any one of claims 12 to 14, wherein the deposition control thickness is changed when the processing conditions are adjusted according to the comparison result. 如請求項10所述之沈積方法,其中該基板包含一主動區域與一被動區域,且量測形成於該被動區域中之該第一沈積層之該實際厚度。 The deposition method of claim 10, wherein the substrate comprises an active region and a passive region, and the actual thickness of the first deposited layer formed in the passive region is measured. 如請求項11所述之沈積方法,其中將於該等已調整之處理條件下形成之該第二沈積層之該實際厚度與該第一沈積層之該實際厚度之一平均值與該目標厚度相比較。 The deposition method of claim 11, wherein the actual thickness of the second deposited layer formed under the adjusted processing conditions and an average of the actual thickness of the first deposited layer and the target thickness Compared. 如請求項10所述之沈積方法,其中,於藉由將該第一沈積層之該實際厚度與該目標厚度相比較而調整該等處理條件後,更包含連續地沈積不同之來源材料於該基板上。 The deposition method of claim 10, wherein after adjusting the processing conditions by comparing the actual thickness of the first deposited layer with the target thickness, further comprising continuously depositing different source materials On the substrate. 如請求項18所述之沈積方法,其中藉由將承放該基板之一基板承放部件移動至沿一方向相互連接之複數處理腔室至少其中之一中,而連續地沈積該等不同之來源材料於該基板上。 The deposition method of claim 18, wherein the different ones are continuously deposited by moving a substrate receiving member carrying the substrate to at least one of a plurality of processing chambers interconnected in one direction The source material is on the substrate. 如請求項19所述之沈積方法,其中,於沈積該等不同之來源材料前,更包含改變一輔助遮罩之一遮罩圖案之位置,以改變該遮罩圖案所暴露之該基板之一被動區域之位置。 The deposition method of claim 19, wherein before depositing the different source materials, further comprising changing a position of a mask pattern of an auxiliary mask to change one of the substrates exposed by the mask pattern The location of the passive zone.
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