TWI410604B - Deposition apparatus and deposition method using the same - Google Patents

Abstract

A transmission chamber connected to the processing chamber, a substrate seating part located in the processing chamber to seat a substrate, a deposition source facing the substrate seating part and storing a source material, and a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate. It is possible to directly measure and monitor the practical thickness of the deposition layer using the deposition apparatus employing the thickness measuring part. Thus, a thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer in real time and correcting the deposition control thickness used to control the practical thickness of the deposition layer, so that the reliability and the yield rate of a device fabricated on the substrate can be improved.

Description

Deposition instrument and deposition method using the same

The present invention relates to a deposition apparatus and a deposition method using the deposition apparatus, and more particularly to a deposition apparatus and method capable of instantaneously monitoring the actual thickness of one of the layers deposited on a substrate.

An organic light emitting device (OLED) is a next-generation display that appears after displays such as liquid crystal displays (LCDs) and plasma display panels (PDPs).

The organic light-emitting device adopts the following scheme: sequentially forming a positive electrode, an organic material layer and a negative electrode on a substrate, and supplying a voltage between the positive electrode and the negative electrode to make electrons and holes ( The hole) moves to the organic material layer, and then the electrons and the holes are recombine to emit light. Here, the organic material layer is usually formed by a thermal deposition method. A conventional deposition apparatus for forming the layer of typical organic material employs a sensor to monitor the thickness of one of the layers deposited on the substrate. The sensor is configured to be exposed to a deposition source that heats and vaporizes an organic material. Thereby, the sensor detects a total amount of organic materials attached thereto, and converts the total amount of the organic materials into a thickness of a layer deposited on the substrate. That is, the thickness of the layer deposited on the substrate is indirectly detected by the sensor. However, since the scheme is an indirect scheme rather than one of the thicknesses for actually measuring the thickness of the layer deposited on the substrate, the accuracy of the thickness measurement is lowered and it is difficult to monitor one of the layers deposited on the substrate in real time. thickness. Moreover, since there is no method for verifying the actual thickness of the layer deposited on the substrate, thickness defects can be found when the characteristics of the device are evaluated after the deposition process is completed, so that the yield rate of the device may be lowered.

The present invention provides a deposition apparatus using a thickness measuring member capable of measuring one of actual thicknesses of one of layers of a substrate, and a deposition method using the deposition apparatus.

According to an exemplary embodiment, a deposition apparatus includes: a processing chamber having a reaction space therein; a transfer chamber coupled to the processing chamber; and a substrate receiving member located in the processing chamber a substrate is placed on the substrate receiving member; a deposition source facing the substrate receiving member and storing a source material; and a thickness measuring member mounted in the transfer chamber to directly The actual thickness of one of the deposited layers formed on the substrate is measured.

The thickness measuring component can utilize an ellipsometer.

A light transmissive plate may be mounted on one side of the transfer chamber provided with the elliptical thickness gauge.

The deposition apparatus may further include a sensor mounted on one side of the processing chamber to sense a total amount of the source material evaporated from the deposition source and calculate a conversion thickness of the deposition layer .

A plurality of processing chambers and a plurality of transfer chambers may be prepared and connected to each other in a direction, each of the processing chambers including one of the deposition sources mounted, and each of the transfer chambers includes a thickness measuring member mounted thereto.

The deposition apparatus can further include a monitoring unit coupled to the sensor to adjust a thickness of one of the deposited layers formed on the substrate.

The monitoring unit can be coupled to a control unit that is coupled to the deposition source to control power supplied to the deposition source and a deposition processing time.

The deposition apparatus can further include a mask holder coupled to a lower portion of the substrate receiving member, wherein a shadow mask can be mounted in the mask holder.

The deposition apparatus can further include an auxiliary mask comprising at least one mask pattern and facing a passive region of the substrate between the open areas of the shadow mask.

A plurality of driving units may be disposed at both ends of the auxiliary mask to change the position of the mask pattern by moving the auxiliary mask, and the driving units are connected to the mask bracket.

According to another exemplary embodiment, a deposition method includes: preparing a substrate in a chamber; forming a first deposition layer on the substrate by depositing a source material; moving the substrate into a transfer chamber and Directly measuring an actual thickness of one of the first deposited layers; comparing the actual thickness of the first deposited layer with a target thickness; and adjusting the plurality of processing conditions according to the comparison result.

After adjusting the processing conditions, a second deposited layer can be formed under the adjusted processing conditions.

The deposition method may further include determining the target thickness and a deposition control thickness before forming the first deposition layer.

By converting a total amount of the source material at a sensor during formation of the first deposited layer, one of the first deposited layers can be converted to a thickness.

The deposition process may be stopped when the converted thickness of the first deposited layer reaches the deposition control thickness.

The deposition control thickness can be changed when the processing conditions are adjusted according to the comparison result.

The substrate may include an active region and a passive region, and may measure the actual thickness of the first deposited layer formed in the passive region.

An average of the actual thickness of the second deposited layer formed under the adjusted processing conditions and the actual thickness of the first deposited layer may be compared to the target thickness.

After adjusting the processing conditions by comparing the actual thickness of the first deposited layer with the target thickness, the deposition method may further comprise continuously depositing different source materials on the substrate.

The different source materials may be continuously deposited on the substrate by moving a substrate receiving member carrying the substrate to at least one of a plurality of processing chambers interconnected in one direction.

The deposition method may further include changing a position of a mask pattern of the auxiliary mask to change a position of the passive region of the substrate exposed by the mask pattern before depositing the different source materials.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments described herein. The embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention is fully disclosed. In addition, the same or similar reference numerals indicate the same or similar constituent elements, although the reference numerals may appear in different embodiments or drawings of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a drawing of a deposition apparatus in accordance with one embodiment of the present invention.

Referring to FIG. 1, the deposition apparatus includes: a processing chamber 100; a transfer chamber 110 connected to an upper side of the processing chamber 100; and a substrate receiving member 300 connected to an upper portion of the processing chamber 100. An inner wall, wherein the substrate receiving member 300 carries a substrate 200; a mask holder 320 is connected to a lower portion of the substrate receiving member 300; a shadow mask 330 is mounted in the mask holder 320; a deposition source 400 disposed to face the substrate receiving member 300; a thickness measuring member 500 mounted on an outer wall of one of the lower portions of the transfer chamber 110; and a robot arm 150 mounted to the transfer chamber The chamber 110 is moved within the chamber 110 to move the chamber 200 into the transfer chamber 110. In addition, the deposition apparatus includes: a sensor 600 disposed on one side of the processing chamber 100 to sense a total amount of one of the source materials 401 evaporated from the deposition source 400; and a louver (not shown) ) is disposed in a space between the substrate receiving member 300 and the deposition source 400. According to an embodiment of the invention, the deposition apparatus further comprises: a vacuum control unit 700 disposed on one side of the processing chamber 100; a first substrate gate 801 disposed on an outer sidewall of the processing chamber 100; Not shown) disposed between the processing chamber 100 and the transfer chamber 110; and a second substrate shutter 802 disposed in one of the side walls of the transfer chamber 110.

The processing chamber 100 is generally formed by a cylindrical shape or a rectangular box shape and includes a predetermined reaction space for processing the substrate 200. Although the processing chamber 100 is formed in a cylindrical shape or a rectangular box shape in the present embodiment, the present invention is not limited to the embodiment. For example, the processing chamber 100 can be shaped to correspond to one of the shapes of the substrate 200. The first substrate gate 801 is formed on one of the outer sidewalls of the processing chamber 100, wherein the substrate 200 enters and exits the processing chamber 100 via the first substrate gate 801. A substrate gate 801 can be formed on the other outer sidewall of the processing chamber 100. The vacuum control unit 700 mounted to the processing chamber 100 includes a gate 710 in combination with one side of the processing chamber 100, a tube 720 coupled to the gate 710, and a vacuum pump 730 coupled to the tube 720. The gate 710 functions to shield or open the interior of the processing chamber 100, and the tube 720 and the vacuum pump 730 are connected to the gate 710. Therefore, the process chamber 100 can be evacuated by opening the gate 710 and utilizing the vacuum pump 730.

The substrate receiving member 300 is mounted to be coupled to an inner wall of the upper portion of the processing chamber 100 to support the substrate 200 entering the processing chamber 100. The substrate receiving member 300 includes a holder 301 for supporting the substrate 200 and an upper portion connected to one of the holders 301 to drive the shaft 302 of one of the rotating holders 301. Here, the drive shaft 302 is coupled to a power unit (not shown) that causes it to rotate.

The mask holder 320 is attached to the lower portion of the substrate receiving member 300 and the shadow mask 330 is placed on the mask holder 320. A shadow mask 330 is used to pattern the source material 401 and place it on the substrate 200.

The deposition source 400 is disposed to face the substrate receiving member 300 and functions to evaporate the source material 401 housed in an inner space of the deposition source 400 and to provide the evaporated source material on one side of the substrate 200. Here, the deposition source 400 of the present embodiment is a spot deposition source, but is not limited thereto. That is, the deposition source 400 can be a line type deposition source. The deposition source 400 includes a furnace 411 and a heater 412 for heating the furnace 411. The furnace 411 is formed with a shape having an open upper portion and an inner space for storing the source material 401. The heater 412 is disposed on one side of the furnace 411, at the lower portion or at the same time. By heating the furnace 411 by the heater 412, the source material 401, such as an organic material, stored in the inner space of the furnace 411 can be heated and evaporated. The heater 412 is connected to a temperature adjustment unit 130 that supplies power thereto. Here, the temperature of the internal space of the furnace 411 is changed depending on the power supplied from the temperature adjustment unit 130 to the heater 412. The temperature adjustment unit 130 is connected to a control unit 120. The control unit 120 adjusts the power supplied from the temperature adjustment unit 130 to the heater 412 according to the actual thickness of one of the layers deposited on the substrate 200.

A louver (not shown) may be further disposed between the substrate receiving member 300 and the deposition source 400. The louver acts to control one of the transport paths of the source material that has evaporated. Here, the louver can have a variety of shapes.

A sensor 600 is disposed inside one of the processing chambers 100 to sense the total amount of material from which the deposition source 400 evaporates. If the source material 401 evaporates, the sensor 600 senses such evaporation and converts the total amount of source material to a deposition thickness. That is, the total amount of the source material sensed by the sensor 600 is calculated as one of the layers deposited on one of the sensors 600. Therefore, when the deposition process is performed, the thickness of the layer deposited on the substrate 200 is indirectly detected based on the converted thickness of the layer deposited on the sensor 600 in real time. However, the thickness of the layer deposited on the substrate 200 detected by the sensor 600 is an indirect thickness detected from the total amount of the source material sensed by the sensor 600, and the indirect thickness may be different from the deposition. The actual thickness of the layer on substrate 200. The sensor 600 can be any sensor capable of sensing the total amount of material from which the deposition source 400 evaporates and dissipates. For example, sensor 600 can include a crystal oscillator.

The sensor 600 is coupled to a monitoring unit 140. The monitoring unit 140 instantly displays the thickness of the layer deposited on the sensor 600 obtained when the deposition process is performed, and controls the thickness of the layer deposited on the sensor 600.

A target thickness of a layer to be deposited on the substrate 200 and a deposition control thickness are provided to the monitoring unit 140 for controlling the thickness of the layer deposited on the sensor 600. Monitoring unit 140 is coupled to control unit 120, which controls the power supplied to deposition source 400. In the process of heating the deposition source 400 and thus depositing the source material 401 on the substrate 200, the sensor 600 converts the total amount of the source material sensed by itself into the deposition thickness of the layer deposited on the sensor 600, and If the deposition thickness reaches the deposition control thickness, the deposition process is stopped. That is, if the monitoring unit 140 sends a signal to the control unit 120, the control unit 120 controls the temperature adjustment unit 130 to stop supplying power to the heater 412, and stops the deposition process.

The transfer chamber 110 is connected to one side of the process chamber 100 that performs the deposition process. The transfer chamber 110 is formed in a cylindrical shape or a rectangular box shape. Although in the present embodiment, the transfer chamber 110 is formed in a cylindrical shape or a rectangular box shape, the present invention is not limited to the embodiment. For example, the transfer chamber 110 can be shaped to correspond to the shape of the substrate 200. A second substrate gate 802 is formed in one of the sidewalls of the transfer chamber 110, and the substrate 200 is transported out of the transfer chamber 110 via the second substrate gate 802. Further, although not shown, a vacuum control unit (not shown) is coupled to the transfer chamber 110. The vacuum control unit changes the pressure within the transfer chamber 110 to a vacuum or atmospheric pressure.

A robot arm 150 is disposed within the processing chamber 100 to move the substrate 200 on which the source material 401 is deposited into the transfer chamber 110. Here, the robotic arm 150 can be any device capable of moving the substrate 200 within the processing chamber 100 to the transfer chamber 110. In the present embodiment, the robot arm 150 utilizes one of the telescopic antennas. The substrate 200 disposed in the processing chamber 100 is moved by the robot arm 150 to a thickness measuring member 500 that faces the outer wall of the lower portion of the transfer chamber 110. Then, the thickness measuring member 500 measures the actual thickness of the layer deposited on the substrate 200 in a state in which the substrate 200 is placed on the robot arm 150. The substrate 200 is discharged to the outside via the second substrate shutter 802 mounted in one of the side walls of the transfer chamber 110 by the robot arm 150.

The deposition apparatus according to the embodiment of the present invention includes a thickness measuring part 500 capable of measuring the actual thickness of the layer deposited on the substrate 200. Referring to Fig. 1, the thickness measuring member 500 is mounted on the outer wall of the lower portion of the transfer chamber 110. The thickness measuring member 500 directly measures the thickness of the layer deposited on the substrate 200, and thereby calculates the actual thickness of the deposited layer. The thickness measuring member 500 according to the present embodiment is an elliptical thickness gauge that measures the actual thickness of the deposited layer by light. The elliptical thickness gauge emits light (e.g., a laser) on a measurement target layer and analyzes a change in polarization of light reflected from a surface of the measurement target layer to thereby measure the thickness of the deposition layer. Therefore, the thickness measuring component 500 includes a light emitting element 511 for emitting light (e.g., a laser) and a light detecting element 512 for detecting light reflected from the deposited layer. A first plate 521 and a second plate 522 are disposed under the transfer chamber 110 provided with the thickness measuring member 500. The first plate 521 transmits light emitted from the light-emitting element 511, and the second plate 522 transmits light reflected from the deposition layer toward the position where the detecting element 512 is disposed. The first plate 521 and the second plate 522 form a light transmissive material. One of the measurement points illuminated by the light may be in a passive region of the substrate 200 and measure the thickness of the layer deposited on the substrate 200. To measure the thickness, the robot arm 150 moves the substrate 200 so that the position of the passive region of the substrate 200 disposed on the robot arm 150 corresponds to the thickness measuring member 500. Thus, by measuring the actual thickness of one of the layers deposited on the passive region of the substrate 200, the actual thickness of one of the layers deposited in one of the active regions of the substrate 200 can be calculated. The thickness measuring component 500 is coupled to the monitoring unit 140.

2 is a flow chart for explaining a procedure for controlling the thickness of one of the deposited layers using the deposition apparatus of FIG. 1; hereinafter, the implementation according to the present invention will be described with reference to FIGS. 1 and 2 A procedure in which the deposition apparatus controls the thickness of the deposited layer.

First, in step S100, the target thickness of the layer to be deposited and the deposition control thickness are determined at the monitoring unit 140. One of the initial values of the deposition control thickness is equal to the target thickness. Then, in step S200, power is supplied to the heater 412 via the temperature adjustment unit 130, and a deposition layer is formed on the substrate 200 by heating the furnace 411 in which the source material 401 is stored. In step S300, while forming the deposited layer, the sensor 600 instantaneously senses the total amount of the evaporated source material and calculates the total amount of the sensed source material as one of the deposited layers to convert the thickness. The monitoring unit 140 instantly displays the converted thickness of the deposited layer. In step S400, the converted thickness of the deposited layer calculated by the sensor 600 is continuously compared with the deposition control thickness determined in the monitoring unit 140, and if the converted thickness reaches the deposition control thickness, the deposition process is stopped. After the deposition process is stopped, in step S500, the thickness measuring component 500 measures the actual thickness of the deposited layer formed on the substrate 200. At this time, after opening a door (not shown) disposed between the processing chamber 100 and the transfer chamber 110 and moving the substrate 200 to the transfer chamber 110 by the robot arm 150, the thickness measuring component 500 measures the sink. The actual thickness of the laminate, the thickness measuring member 500 is disposed on the outer wall of the lower portion of the transfer chamber 110.

Next, in step S600, the actual thickness of the deposited layer is compared with the target thickness or an average of one of the actual thicknesses and the target thickness. For example, if a first substrate (formed on the first substrate after the deposition of the first substrate) enters the processing chamber 100, the actual thickness of one of the deposited layers formed on the first substrate is compared with the target thickness. . Then, if a deposition layer is formed on a second substrate, an average value of one of actual thicknesses of the deposition layers formed on the first and second substrates is compared with the target thickness. Then, if the deposited layers are continuously formed on the third to tenth substrates, comparing the average values of the actual thicknesses of the deposited layers formed on the first to tenth substrates with the target thickness of each deposition process . In the present embodiment, the average values of the actual thicknesses of the deposited layers formed on the 10 substrates are calculated and compared with the target average. For example, if a deposition layer is formed on one of the eleventh substrates after the tenth substrate, an average value of one of actual thicknesses of the deposition layers formed on the second to eleventh substrates is compared with The target thickness. The present invention is not limited to the embodiment. Thus, an average of one of the actual thicknesses of the deposited layers formed on a different number of substrates can be calculated and compared to the target thickness. As described above, in the present embodiment, for each deposition process, in step S600, the actual thickness of the deposited layer formed on the substrate 200 is compared with the target thickness or an average of one of the actual thicknesses of the deposited layers is compared with After the target thickness, the deposition control thickness is corrected in step S700. Then, in step S800, the thickness of one of the deposition layers formed in one of the next deposition processes is adjusted by the modified deposition control thickness. Therefore, by measuring the actual thickness of one of the deposited layers formed on the substrate 200 in each deposition process, comparing the measured actual thickness with the deposition control thickness, and modifying the deposition control thickness, the formation has a reliable thickness. A deposition layer is on the substrate 200.

In the present embodiment, although the thickness of the deposited layer formed on the substrate 200 is adjusted by utilizing the converted thickness of the deposited layer calculated at the sensor 600, the present invention is not limited to the embodiment, and it is not necessary to utilize the sink. The thickness of the deposited layer formed on the substrate 200 can be controlled by the thickness of the laminate. That is, the target thickness is determined at the monitoring unit 140. Then, a deposition layer is formed on the substrate 200 by supplying power to the heater 412 and heating the furnace 411. After the deposition process is completed, the actual thickness of the deposited layer formed on the substrate 200 is measured by the thickness measuring component 500, and the measured actual thickness and the target thickness are compared. If the actual thickness is not equal to the target thickness, processing conditions such as deposition speed and power supplied to the heater 412 are changed. Then, in the next process, a deposited layer is formed under the changed processing conditions.

Fig. 3 is a schematic view showing a main part of a deposition apparatus according to a modification of the embodiment shown in Fig. 1. Hereinafter, a deposition apparatus according to this modification will be described with reference to Fig. 3.

Referring to FIG. 3, the deposition apparatus according to the modification is an in-line deposition apparatus, and thus formed into a shape in which a plurality of processing chambers 100a, 100b, and 100c are arranged in one direction and The plurality of transfer chambers 110a, 110b, and 110c. For example, in the present embodiment, the processing chamber 100 and the transfer chamber 110 described in FIG. 1 can be prepared as a plurality of chambers interconnected in one direction. Therefore, with the deposition apparatus according to this modification, the deposition layers can be continuously formed on the single substrate 200. In this variation, the in-line deposition apparatus is fabricated to include three processing chambers 100a, 100b, and 100c and three transfer chambers 110a, 110b, and 110c, but the present invention is not limited thereto. That is, the inline deposition apparatus can include a different number of processing chambers and transfer chambers.

Referring to Figure 3, processing chambers 100a, 100b, and 100c include deposition sources 400a, 400b, and 400c, respectively. The deposition sources 400a, 400b, and 400c can store source materials different from each other. Further, each of the transfer chambers 110a, 110b, and 110c is disposed between two adjacent processing chambers (e.g., processing chambers 100a, 100b, and 100c). The thickness measuring members 500a, 500b, and 500c are respectively disposed on the outer walls of the lower portions of the transfer chambers 110a, 110b, and 110c. The deposition apparatus according to the modification further includes: a guiding member 310 disposed to face the deposition sources 400a, 400b and 400c and the thickness measuring members 500a, 500b and 500c; a substrate receiving member 300 coupled to the guiding member 310; A mask holder 320 is coupled to a lower portion of the substrate receiving member 300; a shadow mask 330 mounted in the mask holder 320; and an auxiliary mask 340 coupled to the mask holder 320 and configured to correspond to One of the passive regions 200b of the substrate 200 is between the open areas of the shadow mask 330. A door (not shown) is mounted in a space between each of the processing chambers 100a, 100b, and 100c and one of the transfer chambers 110a, 110b, and 110c. When the door is opened, the substrate receiving member 300 is moved to correspond to one of the transfer chambers 110a, 110b, and 110c or one of the processing chambers 100a, 100b, and 100c.

The guiding member 310 serves to move the substrate receiving member 300 of the receiving substrate 200 to face the processing chambers 100a, 100b, and 100c and the respective transfer chambers 110a, 110b, and 110c. Here, the guide member 310 is formed in a shape corresponding to one of the deposition sources 400a, 400b, and 400c and one of the thickness measuring members 500a, 500b, and 500c. Therefore, the substrate receiving member 300 connected to the guiding member 310 can be moved along the guiding member 310 to face each of the processing chambers 100a, 100b, and 100c and each of the transfer chambers 110a, 110b, and 110c.

Figure 4 is a plan view of a region A of one of the deposition apparatus described in Figure 3. Fig. 5 is a cross-sectional view taken along line B-B' shown in Fig. 4. Figure 6 is a conceptual diagram of an auxiliary mask 340 in accordance with a variation of the present invention.

As shown in FIGS. 4 and 5, the auxiliary mask 340 is disposed to correspond to the passive region 200b of the substrate 200 between the closed regions of the shadow mask 330. The auxiliary mask 340 includes a mask pattern 341. The mask pattern 341 can include a different number of patterns. Referring to FIG. 5, the mask pattern 341 of the auxiliary mask 340 exposes an area of the open area of the shadow mask 330. Thus, in the passive region 200b of the substrate 200, the source material is deposited in a region exposed by the mask pattern 341 of the auxiliary mask 340. As shown in FIG. 4, the position of the mask pattern 341 of the auxiliary mask 340 can be changed. Therefore, in the passive region 200b of the substrate 200, the position of the region exposed by the mask pattern 341 is changed. Referring to Fig. 6, the gear member 342 is coupled to the two ends of the auxiliary shroud 340 in a longer direction, and a drive motor 343 is coupled to the gear member 342. The gear member 342 is coupled to the mask holder 320 as shown in FIGS. 3 and 4. The drive motor 343 can include one of a stamping motor and a micro-motor that can precisely control the movement of the auxiliary mask 340. A plurality of apertures (not shown) are disposed in a lower portion of one of the auxiliary shields 340, wherein the apertures are combined with one of the precision gears of the gear member 342 to move the auxiliary mask 340. In the present embodiment, the auxiliary mask 340 is moved by the gear member 342 and the drive motor 343, but the present invention is not limited thereto. That is, any means capable of changing the position of the mask pattern 341 of the auxiliary mask 340 can be utilized.

When the source materials 401, 402, and 403 respectively stored in the deposition sources 400a, 400b, and 400c are successively deposited on the single substrate 200, after the source material 401 is deposited by the first deposition source 400a, the mask of the auxiliary mask 340 is moved. Pattern 341. Source material 402 is then deposited using second deposition source 400b. As such, one of the first deposition layers formed using the first deposition source 400a and the second deposition layer formed by the second deposition source 400b are disposed apart from each other in the passive region 200b of the substrate 200.

Figure 7 is a diagram of an organic light-emitting device fabricated using the deposition apparatus described in Figure 3.

Hereinafter, an operation of one of the deposition apparatuses according to this modification will be described with reference to FIGS. 3 and 7.

First, the target thickness and the deposition control thickness are determined at the monitoring units 140a, 140b, and 140c. Then, the substrate 200 is moved into the first chamber 100a via the first substrate gate 801, and the substrate 200 is placed on the holder 301 of the substrate receiving member 300. At this time, the first deposition source 400a, the second deposition source 400b, and the third deposition source 400c store organic materials of different powder types as source materials. The shadow mask 330 is mounted in the mask holder 320 connected to the lower portion of the substrate receiving member 300, and the auxiliary mask 340 is disposed at a position corresponding to the passive region 200b of the substrate 200 between the open areas of the shadow mask 330. The drive shaft 302 of the substrate receiving member 300 moves along the guide member 310, and thus, the bracket 301 connected to the drive shaft 302 is located directly above the first deposition source 400a. Then, a deposition layer is formed on the substrate 200 by heating and evaporating the first organic material 401 stored in a first furnace 411a. In the process of forming the deposited layer, a first sensor 600a instantaneously senses a total amount of the evaporated first organic material 401 and calculates a thickness of one of the first organic material layers 401a, wherein the first sensing The device 600a is disposed on an inner wall of one of the sides of the first chamber 100a. If the calculated thickness of the first organic material layer 401a obtained by the first sensor 600a reaches the deposition control thickness, the deposition process is stopped. By the processes, as shown in FIG. 7, the first organic material layer 401a is formed in one of the active region 200a and the passive region 200b of the substrate 200. Then, the substrate 200 formed with the first organic material layer 401a is moved to face the first transfer chamber 110a, and the first organic material layer deposited in the passive region 200b of the substrate 200 is measured by the first thickness measuring member 500a. One of the actual thicknesses of 401a, wherein the first thickness measuring member 500a is mounted on the outer wall of the lower portion of the first transfer chamber 110a. Next, the actual thickness of the first organic material layer 401a is compared with the target thickness or an average of one of the actual thicknesses of the first organic material layer 401a is compared with the target thickness. That is, if it is the first substrate that enters the processing chamber 100a and is formed with the first organic material layer 401a, the actual thickness of the first organic material layer 401a formed on the first substrate is compared with the target thickness. In addition, if the M substrate (M is an integer) in the plurality of substrates continuously entering the processing chamber 100a, wherein the first organic material layer 401a is formed on the M substrate, the comparison is formed on the plurality of substrates. The average value of the actual thickness of the first organic material layer 401a and the average thickness of the actual thickness of the first organic material layer 401a formed on the Mth substrate are the target thickness. Then, after modifying the deposition control thickness determined in the monitoring unit 140, the thickness of one of the first organic material layers 401a to be formed in the next deposition process is adjusted by the modified deposition control thickness.

Then, after moving the substrate 200 on which the first organic material layer 401a is formed into the second processing chamber 100b and the second transfer chamber 110b, and then entering the third processing chamber 100c and the third transfer chamber 110c, repeating The process performed in the first processing chamber 100a and the first transfer chamber 110a. However, before the deposition of the second organic material 402 and the third organic material 403, the position of the mask pattern 341 of the auxiliary mask 340 is changed by rotationally connecting the gear member 342 of the auxiliary mask 340. That is, as shown in FIG. 7, the position of the auxiliary mask 340 is changed, and the first organic material layer 401a, the second organic material layer 402a, and the third organic material layer 403a are formed on the substrate 200 separately from each other. In the passive area 200b. Then, the substrate 200 on which the first organic material layer 401a, the second organic material layer 402a, and the third organic material layer 403a are formed is carried out via the second substrate gate 802.

The deposition sources 400a, 400b, and 400c according to this modification utilize a one-point deposition source, but the present invention is not limited thereto, that is, the deposition sources 400a, 400b, and 400c may also utilize a linear deposition source. The thickness measuring component 500 measures the thickness of the organic material layer a plurality of times by changing the position of the measuring point of the organic material layer. Thereby, the thickness of the organic material layer measured at different positions of the measurement points is compared with each other. Therefore, the uniformity of the deposited layer formed on the substrate 200 can be verified regardless of whether or not each opening constituting the linear deposition source is closed and regardless of the deposition rate.

In the present embodiment, although an organic material is used as the source material, the present invention is not limited thereto. A variety of materials such as inorganic materials and metals can be used as the source material.

As described above, according to an embodiment of the present invention, the actual thickness of one of the deposited layers formed on the substrate on which the thin film is deposited can be directly measured and monitored by using a deposition apparatus using a thickness measuring member. Therefore, the thickness of the deposited layer can be accurately controlled by instantly monitoring the actual thickness of the deposited layer formed on the substrate and correcting the deposition control thickness for controlling the actual thickness of the deposited layer. Therefore, the reliability and yield of the device fabricated on the substrate can be improved.

Although the deposition apparatus is described above with reference to specific embodiments, it is not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made thereto without departing from the spirit and scope of the invention as defined by the appended claims.

100. . . Processing chamber

100a. . . Processing chamber

100b. . . Processing chamber

100c. . . Processing chamber

110. . . Transfer chamber

110a. . . Transfer chamber

110b. . . Transfer chamber

110c. . . Transfer chamber

120. . . control unit

130. . . Temperature adjustment unit

140. . . Monitoring unit

140a. . . Monitoring unit

140b. . . Monitoring unit

140c. . . Monitoring unit

150. . . Mechanical arm

200. . . Substrate

200a. . . Active area

200b. . . Passive zone

300. . . Substrate receiving component

301. . . support

302. . . Drive shaft

310. . . Guide member

320. . . Mask bracket

330. . . Shadow mask

340. . . Auxiliary mask

341. . . Mask pattern

342. . . Gear member

343. . . Drive motor

400. . . Sedimentary source

400a. . . Sedimentary source

400b. . . Sedimentary source

400c. . . Sedimentary source

401. . . Source material

401a. . . First organic material layer

402. . . Source material

402a. . . Second organic material layer

403. . . Source material

403a. . . Third organic material layer

411. . . furnace

411a. . . First furnace

412. . . Heater

500. . . Thickness measuring part

500a. . . Thickness measuring part

500b. . . Thickness measuring part

500c. . . Thickness measuring part

511. . . Light emitting element

512. . . Detection component

521. . . First board

522. . . Second board

600. . . Sensor

600a. . . First sensor

700. . . Vacuum control unit

710. . . brake

720. . . tube

730. . . Vacuum pump

801. . . First substrate gate

802. . . Second substrate gate

B-B’. . . line

Exemplary embodiments of the present invention can be understood in more detail by reading the above description in conjunction with the accompanying drawings.

1 is a diagram of a deposition apparatus according to an embodiment of the present invention;

Figure 2 is a flow chart for explaining a procedure for controlling the thickness of a deposited layer using the deposition apparatus of Figure 1;

Figure 3 is a schematic view showing a main part of a deposition apparatus according to a modification of the embodiment shown in Figure 1;

Figure 4 is a plan view of a region A of one of the deposition instruments described in Figure 3;

Figure 5 is a cross-sectional view taken along line B-B' of Figure 4;

Figure 6 is a conceptual diagram of an auxiliary mask according to the variant described in Figure 3;

Figure 7 is a diagram of an organic light-emitting device fabricated using the deposition apparatus described in Figure 3.

100. . . Processing chamber

110. . . Transfer chamber

120. . . control unit

130. . . Temperature adjustment unit

140. . . Monitoring unit

150. . . Mechanical arm

200. . . Substrate

300. . . Substrate receiving component

301. . . support

302. . . Drive shaft

320. . . Mask bracket

330. . . Shadow mask

342. . . Gear member

400. . . Sedimentary source

401. . . Source material

411. . . furnace

412. . . Heater

500. . . Thickness measuring part

511. . . Light emitting element

512. . . Detection component

521. . . First board

522. . . Second board

600. . . Sensor

700. . . Vacuum control unit

710. . . brake

720. . . tube

730. . . Vacuum pump

801. . . First substrate gate

802. . . Second substrate gate

Claims (20)

A deposition apparatus comprising: a processing chamber having a reaction space; a transfer chamber coupled to the processing chamber; and a substrate receiving member located in the processing chamber for the substrate a substrate is disposed on the receiving component; a deposition source faces the substrate receiving component and stores a source material; a thickness measuring component is installed in the transfer chamber to directly measure the formed on the substrate a physical thickness of one of the deposited layers; and a sensor mounted on one side of the processing chamber to sense a total amount of the source material evaporated from the deposition source, and calculate a converted thickness of the deposited layer . The deposition apparatus of claim 1, wherein the thickness measuring component utilizes an ellipsometer. The deposition apparatus of claim 2, wherein a light transmissive plate is mounted on one side of the transfer chamber provided with the elliptical thickness gauge. The deposition apparatus of claim 1, wherein the plurality of processing chambers and the plurality of transfer chambers are prepared and connected to each other in a direction, each of the processing chambers including one of the deposition sources installed, and each of the transfer chambers includes the mounting One of the thickness measurement components. The deposition apparatus of claim 1, further comprising a monitoring unit coupled to the sensor to adjust a thickness of one of the deposited layers formed on the substrate. The deposition apparatus of claim 5, wherein the monitoring unit is connected to the thickness And a control unit coupled to the deposition source to control power supplied to the deposition source and a deposition processing time. The deposition apparatus of claim 1, further comprising a mask holder attached to a lower portion of the substrate receiving member, wherein a shadow mask is mounted in the mask holder. The deposition apparatus of claim 7, further comprising an auxiliary mask comprising at least one mask pattern and facing a passive region of the substrate between the open areas of the shadow mask. The deposition apparatus of claim 8, wherein a plurality of driving units are disposed at two ends of the auxiliary mask to change a position of the mask pattern by moving the auxiliary mask, the driving units being connected to the mask Cover bracket. A deposition method comprising: preparing a substrate in a chamber; forming a first deposition layer on the substrate by depositing a source material; moving the substrate into a transfer chamber and directly measuring the first sink One of the actual thicknesses of the laminate; comparing the actual thickness of the first deposited layer with a target thickness; and adjusting the complex processing conditions based on the comparison. The deposition method of claim 10, wherein after adjusting the processing conditions, a second deposited layer is formed under the adjusted processing conditions. The deposition method of claim 10, further comprising establishing the target thickness and a deposition control thickness before forming the first deposition layer. The deposition method of claim 10, wherein the first quantity is calculated by sensing a total amount of the source material at a sensor during formation of the first deposition layer One of the deposited layers converts the thickness. The deposition method of claim 13, wherein the deposition process is stopped when the converted thickness of the first deposited layer reaches a deposition control thickness. The deposition method according to any one of claims 12 to 14, wherein the deposition control thickness is changed when the processing conditions are adjusted according to the comparison result. The deposition method of claim 10, wherein the substrate comprises an active region and a passive region, and the actual thickness of the first deposited layer formed in the passive region is measured. The deposition method of claim 11, wherein the actual thickness of the second deposited layer formed under the adjusted processing conditions and an average of the actual thickness of the first deposited layer and the target thickness Compared. The deposition method of claim 10, wherein after adjusting the processing conditions by comparing the actual thickness of the first deposited layer with the target thickness, further comprising continuously depositing different source materials On the substrate. The deposition method of claim 18, wherein the different ones are continuously deposited by moving a substrate receiving member carrying the substrate to at least one of a plurality of processing chambers interconnected in one direction The source material is on the substrate. The deposition method of claim 19, wherein before depositing the different source materials, further comprising changing a position of a mask pattern of an auxiliary mask to change one of the substrates exposed by the mask pattern The location of the passive zone.