JP2005281858A - Deposition thickness measurement method, material layer deposition method, deposition thickness measurement device, and material layer deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To correctly detect the thickness of a deposited material layer at the film deposition. <P>SOLUTION: X-rays are irradiated on a film thickness monitoring area provided on a substrate 14 or in a vicinity of the substrate 14 while changing the angle of incidence from an X-ray emitter 26. A monitoring unit 52 formed of the same material as a material layer is simultaneously formed on the film thickness monitoring area during the vapor deposition of a material film on the substrate. The X-rays reflected by the film thickness monitoring area reaches from an aperture of a film deposition chamber 10 to an X-ray detector 28. The X-ray detector 28 detects the X-ray reflectance. The thickness of the film deposited on the film thickness monitoring area is calculated by a control device 30 based on the period of oscillation of the reflectance. A material layer of the target thickness is correctly deposited on the substrate by adjusting the deposition speed by controlling the moving speed of a crucible 18, the heating state of a heater 20 or the like according to the calculated thickness of the film thickness monitoring unit 52. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  It relates to the deposition of materials on a substrate and the measurement of the deposition thickness.

  Conventionally, in various devices, a laminated structure of a plurality of material layers is used, and vapor deposition, sputtering, or the like is used for the deposition. For example, in an organic electroluminescence (EL) display, display is performed by arranging pixels each having an organic EL element (OLED) in a matrix. This organic EL element is known to have an organic layer such as a hole transport layer, a light emitting layer, and an electron transport layer. For example, Patent Document 1 discloses that these organic layers are formed by vacuum deposition. There is a description.

  In such an organic EL display, the thickness of each organic layer is much thinner than that of an electrode layer or the like, and a plurality of organic layers are often stacked. Therefore, it is expected that the thickness of the layer has a great influence on the light emission characteristics, and it is desired to appropriately deposit each layer. Therefore, there is a demand for making the thickness of each layer accurate.

  In the case of manufacturing an organic EL display, it is more efficient to use a substrate as large as possible. For example, in the case of a so-called small display of about 1 type to 10 type, these regions are formed on a mother substrate. It is preferable to prepare a large number at once and cut after the preparation. Accordingly, the organic material is also deposited on a substrate having a relatively large area. Therefore, there is also a demand for minimizing variation due to the deposition position on the substrate.

JP 2003-257644 A

  Here, for measuring the thickness of the thin film, a spectroscopic ellipsometer or a film thickness meter using a crystal resonator is used. The spectroscopic ellipsometer is used when a sample after film formation is measured outside the film formation apparatus, and cannot be measured during actual film formation. In addition, since the spectroscopic ellipsometer is required to have high smoothness on the surface of the film to be measured, an element such as a thin film transistor is formed in a lower layer than the organic EL element, and the surface uses unevenness due to them. High accuracy cannot be obtained for the film thickness measurement of the organic layer.

  In addition, if a method of measuring the film thickness (deposition amount) from the change in the frequency of the crystal unit is adopted, the thickness of the material attached to the crystal unit can be measured by placing the crystal unit in the film forming apparatus. However, when it is used continuously, the measurement value changes, so stable measurement is difficult. In addition, the thickness of the material layer actually formed on the substrate cannot be measured.

  An object of the present invention is to effectively measure the film thickness during material deposition and to effectively control the deposition according to the measured value.

  The present invention is a method for measuring a deposition thickness of a material layer on a substrate, wherein the material layer is deposited by depositing a material on a deposition thickness monitor region provided at a predetermined location near the substrate or the substrate and the substrate. And forming the deposited thickness monitor region with X-ray light, detecting an X-ray reflected wave from the material layer, and based on the detected X-ray reflected wave intensity of the material layer formed on the substrate. Measure the deposition thickness.

  Another aspect of the present invention is a method of forming a material layer on a substrate, wherein the material is deposited on a deposition thickness monitor region provided at a predetermined location near the substrate or the substrate and on the substrate. Forming a material layer, irradiating the deposition thickness monitor region with X-ray light, detecting an X-ray reflected wave from the material layer, and forming on the substrate based on the intensity of the detected X-ray reflected wave. The thickness of the deposited material layer is measured, and the deposition rate is controlled according to the measurement result.

  In another aspect of the present invention, at the time of depositing the material layer, at least one of a heating state of a vapor deposition material in a vapor deposition source for forming the material layer by vapor deposition or a relative scanning speed of the vapor deposition source and the substrate. To control.

  In another aspect of the present invention, a plurality of the deposition thickness monitor regions are provided apart from each other in the substrate or in the vicinity of the substrate, and the heating distribution of the vapor deposition source is controlled based on the deposition thickness in each deposition thickness monitor region. To do.

  In another aspect of the present invention, the vapor deposition chamber for vapor-depositing the material layer is emitted from a light emitter disposed outside the vapor deposition chamber and emitted from an X-ray optical path reaching the deposition thickness monitor region and from the material layer. X-ray transmission windows are respectively provided on the optical paths of the X-rays reaching the light receiver, and the X-ray transmission windows are heated while the material layer is deposited.

  In another aspect of the present invention, the deposition thickness of the material layer is such that the X-ray reflected wave generated by interference of the X-ray reflected wave is changed while changing an incident angle of the X-ray to the deposition thickness monitoring region. Calculation is based on the vibration of the reflectance.

  Thus, according to the present invention, the deposited film thickness of the material layer in the deposited thickness monitor region is obtained based on the reflection intensity of the irradiated X-rays. By detecting the actual deposition thickness of a material layer such as a vapor deposition layer from the reflection intensity of X-rays, the thickness can be obtained accurately and while forming the material layer. Therefore, the material layer can be formed to an appropriate thickness by controlling the deposition conditions (for example, the temperature of the vapor deposition source and the moving speed) according to the detected deposition thickness. In addition, since the thickness is measured at the same time as the material layer is formed, that is, the thickness is monitored at the time of formation, the measurement time of the deposited thickness can be drastically shortened compared to the method of separately measuring outside the apparatus, and the purpose of the deposited value is The thickness of the processed substrate deviating from the value can be adjusted or removed from the process at that time, and the manufacturing efficiency can be improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 shows a schematic configuration of a deposition apparatus (evaporation apparatus) according to an embodiment. The vacuum chamber (film formation chamber) 10 is configured to be airtight, and the inside of the interior after the substrate 14 (for example, a glass substrate), which is a deposition target, is introduced, is in a predetermined reduced pressure state using a vacuum pump or the like. Maintained. A substrate fixing part 12 is provided at the upper part in the vacuum chamber 10, and the substrate 14 is fixed thereto. Also, a crucible moving rail 16 is installed below the fixed substrate 14, and a crucible 18 is installed here so as to be able to reciprocate. For the movement of the crucible 18, the motor 40 is basically used, but there are various power transmission methods that can be adopted as appropriate. In this example, the long screw 42 is rotated by the motor 40, and the movement of the crucible 18 is controlled by the rotation of the long screw. The moving means is required to be movable at a constant speed in order to achieve uniform vapor deposition.

  The crucible 18 is, for example, an elongated box-shaped vapor deposition source (linear source) slightly longer than the width direction of the substrate. The vapor deposition material contained in the crucible 18 is heated and evaporated, and the material is removed from the opening above the crucible. discharge. The released evaporation material adheres to the lower surface of the substrate 14 and is deposited. By moving (scanning) the crucible 18 in the length (longitudinal) direction of the substrate 14, a material layer can be deposited on the entire surface of the substrate 14 under substantially the same conditions. Although only one crucible 18 is shown in the figure, a plurality of crucibles 18 may be provided to evaporate the material from each. In that case, a different material can be evaporated from each crucible 18 to form a laminated structure.

  In the case where the material layer is formed by vapor deposition only on a predetermined portion on the substrate, a mask 50 is disposed on the lower surface of the substrate 14 as shown in the figure to limit the vapor deposition portion. For example, in a display using an organic EL element, if an organic EL element having a light emitting layer of any of RGB three colors is formed for each pixel and this light emitting layer is separately formed for each color, for each material What is necessary is just to vapor-deposit by exchanging masks with different opening positions. Alternatively, the substrate 14 may be moved to another vacuum chamber 10 and vapor deposition may be performed using masks having different opening positions. Note that the substrate 14 may be moved instead of the crucible 18 during vapor deposition.

  A heater 20 is attached to the peripheral surface of the crucible 18, and a heater power supply unit 24 is connected to the heater 20 via a cable 22. Therefore, the heating state of the heater 20 is controlled by the power supply from the heater power source 24, and the evaporation state of the material from the crucible 18 is controlled.

  In the present embodiment, a plurality of pairs of transparent portions (windows) 11 are provided in a predetermined portion of the vacuum chamber 10, and a light emitter 26 and a light receiver 28 are disposed corresponding to them. The light beam emitted from the light emitter 26 is reflected by a predetermined portion (film thickness monitor region described later) of the substrate 14 on which the material layer is formed, and reaches the light receiver 28. As the light beam, a light beam having a wavelength range of about 200 nm to 900 nm, such as ultraviolet light and visible light, can be adopted. (When these light beams are used, for example, the light receiver 28 transmits the transmitted light of the light irradiated to the monitor region 52. In this embodiment, in particular, X-rays are employed. That is, in the present embodiment, the light emitter 26 and the light receiver 28 are specifically an X-ray emitter 26 and an X-ray detector (for example, a scintillator) 28 as shown in FIG.

  As shown in the figure, a mask 50 is disposed in proximity to the substrate 14 between the substrate 14 and the crucible 18, and a monitor region (monitor unit) for irradiating X-rays from the X-ray ejector 26 is disposed on the mask 50. 52) is provided at a position corresponding to 52). In addition, it is preferable that the positions of the light emitter 26 and the light receiver 28 are movable in accordance with the position of the opening 54 of the mask 50. Further, as will be described later, when measuring the film thickness, it is necessary to change the incident angle of the X-rays to the film thickness monitor region. Therefore, the X-ray ejector 26 has the incident angle of the X-rays to the film thickness monitor region. An angle adjustment mechanism for adjusting the angle is provided. Further, since both the X-ray emitter 26 and the X-ray detector 28 have a large incident angle emission angle to the X-ray monitor unit, the X-ray emitter 26 and the X-ray detector 28 are arranged on the side of the substrate 14 and the mask 50, and the corresponding light. An X-ray transmission window 11 provided in the film forming chamber 10 on the road is also provided on the side wall of the film forming chamber 10.

The vapor deposition material emitted from the crucible 18 is similar to the pattern opening corresponding to the pixel region.
Through the film thickness measurement opening 54, it adheres to the corresponding position of the substrate 14, and as a result, the same material is formed on the substrate as shown in FIG. The film thickness monitor section (monitor film) 52 is formed in the film thickness (deposition thickness) monitor region under the same conditions. The X-rays emitted from the X-ray emitter 26 are reflected by the film thickness measurement opening 54 and the film thickness monitor region of the substrate 14 and reach the X-ray detector 28. The X-ray detector 28 detects the intensity of the detected X-ray reflected wave, supplies a signal about the detected intensity to the control device 30, and the control device 30 detects the vibration of the reflectance, and vapor deposition is performed from the period of this vibration. The film thickness is calculated. The control device 30 controls the heater power source 24 to control the current supply from the heater power source 24 to the heater 20 and to control the motor 40 so that the vapor deposition film thickness is appropriate. Control the moving speed of the. By such control, the material deposition rate (film formation rate) on the substrate is controlled so that the film thickness of the material layer becomes an optimum value.

  Here, for example, ultraviolet rays are used for film thickness measurement, and ultraviolet rays are irradiated to the monitor unit 52, light that passes through the monitor unit 52 and reaches the light receiving unit is detected, and calibration data obtained in advance from the light absorption intensity. When the thickness of the vapor deposition film is detected by referring to FIG. 1, the light emitter 26 and the light receiver 28 are provided above and below the vapor deposition chamber 10 in order to transmit ultraviolet rays through the monitor unit 52. However, when X-rays are used for film thickness measurement as in this embodiment, the X-ray ejector 26 has a large incident angle at which the incident X-rays are totally reflected on the measurement target surface, that is, the film thickness monitor region. The X-ray detector 28 has a material layer forming surface (film thickness monitor region), which is as large as the incident angle. It is provided at a position where X-rays reflected at the exit angle can be detected.

  Specifically, the film thickness measurement using X-rays can adopt the X-ray reflectivity measurement method (Grazing Incidence X-ray Reflectively technique: GIXR method), and the intensity of the reflected wave ( The principle of detecting the (reflectance) and calculating the film thickness from the oscillation cycle of the reflectance is used. Since there is an optical path difference between the X-ray reflected at the surface of the material layer (monitor unit 52) and the X-ray reflected at the interface between the material layer and its lower layer (for example, the substrate), reflection occurs as shown in FIG. The waves interfere with each other. This optical path difference is the difference between the film thickness t of the measurement target film, the incident angle to the measurement target film corresponding to the difference between the X-ray incident angle θ and the total reflection critical angle θc, the emission angle, and the lower layer of the measurement target film. It occurs depending on the incident angle to the interface and the exit angle θ ′ (θ ′ = θ−θc).

  When the reflectivity is measured by the X-ray detector, more specifically, the X-ray reflectivity measuring detector 28 while changing the incident angle θ, the reflectivity has a vibration structure due to interference as shown in FIG. Occur. Therefore, the thickness t of the material layer can be calculated from the period of the vibration. As the film thickness increases, the period decreases. For example, the control device 30 can perform a Fourier analysis from the reflectance, whereby the film thickness can be obtained quantitatively. The measurement of the X reflected wave intensity in this embodiment can be measured based on the intensity instead of the spectroscopic ellipsometer that has already been proven as a film thickness measurement.

  The X-ray ejector 26 and the X-ray detector 28 described above may be provided in the vacuum chamber 10. In this case, it is preferable to attach a shutter to prevent the deposition of unnecessary vapor deposition material on the X-ray emitter 26 and the X-ray detector 28. Alternatively, instead of the shutter, at least the temperature around the X-ray detector 28 may be controlled (for example, heating control is performed so as to be a constant high temperature) so that the vapor deposition material does not adhere to the X-ray detector 28.

  Here, in the organic EL element, it is considered that the thickness of the organic layer is one of the important factors for determining the light emission conditions in the light emitting layer, and in order to realize higher light emission efficiency and high-precision light emission control, The demand for the accuracy of the organic layer thickness will increase further in the future. For example, a CuPc film is often used as a hole injection layer provided between an anode and a hole transport layer in an organic EL element, and is usually very thin, about 10 nm. It is desired that the film thickness be controlled with higher accuracy. As described above, accurate measurement is difficult if a crystal resonator lacking stability during continuous use is used.

  Furthermore, since the film surface of the CuPc film is in a surface state in which irregular reflection easily occurs, such a film is not suitable for film thickness measurement using an ellipsometer. On the other hand, in the X-ray reflectivity measurement method as in this embodiment, measurement accuracy higher than that of an ellipsometer can be obtained, and film thickness can be measured in real time. Moreover, the material of the organic layer of the organic EL element still has many problems in its durability. For this reason, after the formation of the lower layer side electrode (anode or cathode), for example, each layer of the organic layer having a multilayer structure formed by a vacuum deposition method has moisture that adheres to the surface or accelerates the deterioration of the organic layer. In order to reduce the possibility of exposure, it is desired to form continuously without breaking the vacuum atmosphere. Therefore, if the thickness of the film formed in the vacuum evaporation chamber is measured as needed as in this embodiment, it is necessary to take the substrate out of the apparatus only for film thickness measurement, for example, when using an ellipsometer. Therefore, the film thickness can be accurately controlled. The organic layer having a multilayer structure of the organic EL element includes, for example, a hole injection layer and a hole in order from the bottom when the anode is an electrode on the lower layer side and the upper layer is a cathode formed almost integrally with the electron injection layer. A laminated structure of a transport layer, a light emitting layer, and an electron transport layer is given as an example, and it is possible to continuously form each layer while controlling the thickness of each layer to an optimum value.

  Further, in the method of measuring the film thickness based on the reflectance obtained by detecting the reflection intensity of the X-ray as in the present embodiment, a standard sample is not required on the basis of the measurement principle, and an absolute analysis is performed. The result can be obtained. In addition, since long-term fluctuations in the X-ray intensity generated by the X-ray ejector 26 do not affect the measurement results in principle, there is no need for calibration work, and the thickness of the material layer can be easily and accurately adjusted in real time. Can be measured.

  In a normal vapor deposition process, first, the crucible 18 is heated to a predetermined temperature to stabilize the evaporation state. This is done by placing the crucible 18 in a standby position off the bottom of the substrate 14 as shown in FIG. It is also preferable to place a quartz-type film thickness meter above the crucible 18 at the standby position to detect the evaporation state.

  Further, the substrate 14 is set on the substrate fixing portion 12. Then, the motor 40 is driven to move the crucible 18 at a predetermined speed, and vapor deposition is performed on the lower surface of the substrate 14. As described above, since the film thickness can be detected from the vibration frequency of the X-ray reflection intensity, by controlling the heating state by the heater 20 and the number of rotations of the motor 40 based on the detection result, the deposition is always stable. It can be performed. Note that such control may be performed in order to prevent variations in deposition on one substrate 14 or may be performed in order to prevent variations in deposition on a plurality of substrates 14.

  Furthermore, in the said embodiment, the vapor deposition film thickness in the board | substrate 14 actually used as vapor deposition object was detected. However, a dummy substrate may be used, and the deposition state on the dummy substrate may be investigated to control the heating state of the crucible 18 and the movement state of the crucible 18. Here, this dummy substrate may be provided in place of the substrate 14 to be actually deposited, or may be provided adjacent to the substrate 14. Further, as shown in FIG. 4, the dummy substrate 15 may not be a flat plate, but may be a columnar shape or a polygonal columnar shape, corresponding to the change in the crucible 18 every time a plurality of vapor deposition films are formed (or the peripheral surface position (or And the evaporation state of the evaporated substance from the crucible 18 can be detected by calculating the deposition thickness of the vapor deposition film on the corresponding peripheral surface from the above-mentioned X-ray reflectivity. The amount of vapor deposition can be controlled. In particular, it is preferable to detect the film thickness by making the dummy substrate into a cylindrical shape, rotating it appropriately, and depositing it on the surface.

  FIG. 5 shows a monitor unit (film thickness measuring unit) 52 formed in the monitor region set on the substrate 14. In this example, three monitor areas are set in the width direction of the substrate 14 (matching the longitudinal direction of the crucible 18), and a monitor section (monitor film) 52 is formed here. These monitor sections are set in the substrate 14 as areas that are not used as actual organic EL element areas (or display areas). In this embodiment, the crucible 18 has an elongated shape in the width direction, and the crucible 18 moves in a direction perpendicular to the longitudinal direction (the width direction of the substrate 14). Therefore, by forming three monitor portions 52 along the longitudinal direction of the crucible 18, the uniformity of the evaporation amount in the longitudinal direction of the crucible 18 can be detected. Based on the detection result, the crucible 18 is detected. The heating state in the longitudinal direction can be controlled. The heating state can be performed by dividing the heater 20 into a plurality of parts in the longitudinal direction of the crucible 18 and controlling individual energization to the divided heaters.

  In FIG. 5, the film thickness monitor region (monitor unit 52) indicated by a broken line is a film of different vapor deposition films using different vapor deposition sources when performing multilayer vapor deposition continuously without breaking the vacuum atmosphere. Each can also be used for thickness measurement. That is, if the mask 50 used at the time of film formation is a mask in which the positions of the film thickness measurement openings are different, the monitor portions formed on the substrate are formed at different positions, and the lower layer already formed. It is possible to measure the thickness of the formed film without overlapping with the organic film. In the X-ray reflectivity measurement method, the thickness of each of a plurality of stacked layers can be calculated based on the vibration period. However, since there are many factors to be considered, as shown in FIG. By forming the monitor portions in different monitor regions without overlapping, the thickness of each layer can be obtained with higher accuracy. In addition, the position of the opening for measuring the film thickness may be different from each other by about 10 mm, for example. You may use the mask from which the position of this opening part for film thickness measurement differs for every film-forming chamber. By the method as described above, it is possible to reliably measure the thicknesses of the films that are continuously laminated. The monitor region may be provided dispersed throughout the substrate 14 (however, the region where the organic EL element is not formed is desirable).

In the above-described embodiment, the crucible 18 having an elongated shape is used. However, as the crucible 18, a large number of point-like ones may be provided. If the crucible 18 has such a planar shape, vapor deposition can be performed on the large-area substrate 14 without moving both the substrate 14 and the crucible 18. On the other hand, when such a large area of vapor deposition is performed, the film thickness of the vapor deposition tends to vary, but the film thickness detection of this embodiment is performed at a plurality of dispersed points on the substrate, and the heating state of the crucible 18 is partially If the configuration is controlled in a controlled manner, it can be controlled so that uniform vapor deposition can be performed as a whole. In addition, when the board | substrate 14 which is vapor deposition object is a small area, you may employ | adopt the single point-like crucible 18. FIG. Further, when the detected film thickness is about ± 50% of the target value, the heating control of the crucible 18 may not be sufficient, and the relative speed between the substrate 14 and the crucible 18 (for example, the crucible). It is desirable to change the 18 scan speed).

  In addition, the windows 11 provided in the vacuum chamber 10 corresponding to the X-ray emitter 26 and the X-ray detector 28 are heated to a high temperature, thereby preventing deposition of vapor deposition on these windows. it can. Even when the X-ray ejector 26 and the X-ray detector 28 are provided inside the vacuum chamber 10, it is preferable to prevent the deposition of the vapor deposition material of the detector at a high temperature to prevent the deposition.

  In the above description, as shown in FIG. 1, a horizontal vapor deposition apparatus in which a crucible 18 is disposed below, and a mask and a substrate are disposed above the surface in a horizontal direction is taken as an example. However, the present invention is not limited to this, and in a vertical deposition apparatus (vacuum deposition or sputtering apparatus), a window that transmits X-rays from the X-ray ejector 26 to the material layer forming side of the substrate in the film formation chamber, and a monitor A window for transmitting the X-rays reflected in the region to reach the X-ray detector 28 is provided, and the film thickness can be measured in real time by measuring the film thickness from the vibration period of the X-ray reflection intensity.

  FIG. 6 shows an example of the configuration of the vertical deposition apparatus (film formation apparatus) 600, which is in principle the same as the film formation apparatus of FIG. 1 described above, and supports the substrate 64 and the evaporation source. The difference is that the direction is vertical. That is, the substrate 64 on which the film is formed is supported upright in the vertical direction in the film forming chamber 60. Further, for example, a linear vapor deposition source 70 having the same width as that of the substrate is supported in the vertical direction. In the example of FIG. 6, for example, vapor deposition is performed so that the relative position between the vapor deposition source 70 and the substrate 64 changes. The source 70 moves and the material from the vapor deposition source 70 is deposited on the substrate 64 directly or through a mask 66. The mask 66 is provided with an opening 74 for measuring the film thickness in a non-formation region of the organic EL element. An X-ray ejector is formed on the film formed on the substrate 64 from the vapor deposition source 70 through the opening. By irradiating the X-ray from 76 while changing the incident angle and measuring the X-ray reflection intensity by the X-ray detector 78, the film thickness can be measured in the apparatus accurately and immediately after the film formation as described above. . Here, in the vertical deposition apparatus 600, since the substrate 64 is supported upright, the light from the light emitter 76 is preferably incident from the side surface of the film formation chamber 60. For example, the film is formed using an optical fiber. Light may be introduced into the chamber 60.

  In addition, as shown in FIG. 7, a shower-like nozzle 80 is employed as the discharge end of the vapor deposition source, and the film-forming material (for example, organic material) source is sequentially evaporated in the carrier gas in the order of film formation. The above-described film thickness measurement method can also be adopted in a vapor deposition type film forming apparatus 800 that discharges from the nozzle 80 and stacks on the substrate 14 selectively held in the heated film forming chamber through a valve from the line. That is, for example, a mask 90 disposed between the substrate 14 and the nozzle 80 is provided with an opening for film thickness measurement, and the thickness of the film formed at that position is determined by the X-ray emitter 86 and the X-ray detector 88. Can be measured with high accuracy by calculating the vibration period of the X-ray reflectivity. Further, the position of the film thickness measurement opening 84 of the mask 90 is changed by, for example, a shutter every time the deposition source is changed, or by using a different mask, the thickness of each thin film to be continuously formed can be changed. It can be measured in real time.

It is a figure which shows the structure of the whole vapor deposition apparatus provided with the film thickness measurement function by the X-ray reflectivity measurement which concerns on embodiment of this invention. It is a figure explaining the optical path difference produced | generated depending on the film thickness at the time of using an X-ray for a measurement. It is a figure which shows notionally the vibration structure of a X-ray reflectivity. It is a figure which shows the example of the dummy board | substrate for the film thickness measurement attached to the board | substrate. It is a figure which shows the monitor part of a board | substrate. This is an example in which the film thickness measurement mechanism of this embodiment is applied to a vertical vapor deposition apparatus. This is an example in which the film thickness measurement mechanism of this embodiment is applied to a film forming apparatus using a shower-like nozzle.

Explanation of symbols

  10 vacuum chamber, 12 substrate fixing part, 14, 64 substrate, 15 dummy substrate, 16 moving rail, 18 crucible (deposition source), 20 heater, 22 cable, 24 heater power supply unit, 26, 76, 86 X-ray injector, 28, 78, 88 X-ray detector, 30 controller, 40 motor, 50, 66, 90 mask, 52 monitor unit (film thickness measuring unit), 60 (vertical type) film forming chamber, 70 (vertical type) evaporation source 80 Shower nozzle, 600 Vertical film forming apparatus, 800 Vapor growth type film forming apparatus.

Claims (11)

A method for measuring a deposition thickness of a material layer on a substrate, comprising:
A material layer is formed by depositing a material on the deposition thickness monitor region provided at a predetermined location near the substrate or the substrate and on the substrate,
Irradiating the deposition thickness monitor region with X-ray light, detecting an X-ray reflected wave from the material layer;
A deposition thickness measurement method, comprising: measuring a deposition thickness of a material layer formed on a substrate based on the detected intensity of an X-ray reflected wave. A method for forming a material layer on a substrate, comprising:
A material layer is formed by depositing a material on the deposition thickness monitor region provided at a predetermined location near the substrate or the substrate and on the substrate,
Irradiating the deposition thickness monitor region with X-ray light, detecting an X-ray reflected wave from the material layer;
A method for forming a material layer, comprising: measuring a deposition thickness of a material layer formed on a substrate based on the detected intensity of an X-ray reflected wave; and controlling a deposition rate according to the measurement result. In the formation method of the material layer of Claim 2,
When depositing the material layer, at least one of a heating state of a vapor deposition material in a vapor deposition source for forming the material layer by vapor deposition or a relative scanning speed of the vapor deposition source and the substrate is controlled. Forming method. In the formation method of the material layer of Claim 3,
A plurality of the deposition thickness monitoring regions are provided apart from each other in the substrate or in the vicinity of the substrate, and the heating distribution of the vapor deposition source is controlled based on the deposition thickness in each deposition thickness monitoring region. Method. In the formation method of the material layer of Claim 2,
A vapor deposition chamber for depositing the material layer on the substrate is emitted from a light emitter disposed outside the vapor deposition chamber and is emitted from an X-ray optical path reaching the deposition thickness monitor region and from the material layer to reach a light receiver. Each has an X-ray transmission window on the X-ray optical path,
A method for forming a material layer, wherein the X-ray transmission window is heated while the material layer is deposited. The method according to any one of claims 1 to 5, wherein
The deposition thickness of the material layer is calculated based on the vibration of the reflectance of the X-ray reflected wave caused by the interference of the X-ray reflected wave while changing the incident angle of the X-ray to the deposition thickness monitor region. A method for measuring a deposition thickness or a method for forming a material layer. The method according to any one of claims 1 to 6, wherein
The deposition thickness measuring method or the material layer forming method, wherein the deposition thickness monitor region is irradiated with X-ray light and the X-ray reflected wave is received outside a deposition chamber for forming the material layer. In a forming apparatus for depositing a material layer on a substrate,
X-ray irradiation means for irradiating the substrate on which the material layer is deposited or a deposition thickness monitor region provided at a predetermined location near the substrate while irradiating X-rays while changing the incident angle;
X-ray detection means for detecting an X-ray reflected wave from a monitor region irradiated with the X-ray;
A deposition rate control unit that measures the deposition thickness based on the X-ray reflected wave intensity detected by the X-ray detection unit, and adjusts the deposition rate of the material layer on the substrate based on the measurement result;
An apparatus for forming a material layer, comprising: The forming apparatus according to claim 8.
In the vapor deposition chamber for forming the material layer, a vapor deposition source for forming the material layer by vapor deposition is disposed, and at least a heating state of the vapor deposition material in the vapor deposition source or a relative scanning speed of the vapor deposition source and the substrate is provided. An apparatus for forming a material layer, comprising: a control unit that controls a deposition rate by controlling one of the two. The forming apparatus according to claim 9, wherein
A plurality of the deposition thickness monitoring regions are provided apart from each other in the substrate or in the vicinity of the substrate, and the heating distribution of the vapor deposition source is controlled based on the deposition thickness in each deposition thickness monitoring region. apparatus. The forming apparatus according to any one of claims 8 to 10,
In the vapor deposition chamber for forming the material layer,
On the optical path of X-rays emitted from the X-ray irradiator disposed outside the vapor deposition chamber and reaching the deposition thickness monitor region and on the optical path of X-ray reflected waves emitted from the material layer and reaching the X-ray detector Each with an X-ray transmission window,
Furthermore, it has a heating part which heats the said window part, The formation apparatus of the material layer characterized by the above-mentioned.

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