JP2016222974A - Vacuum deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus capable of measuring the film thickness of a deposited film with higher accuracy.SOLUTION: A vacuum deposition apparatus 30 comprises: a first vacuum chamber transmission window 14A and a second vacuum chamber transmission window 14B which are respectively disposed on a first side wall 1a of a vacuum chamber 1 and a second side wall 1b thereof facing the first side wall 1a and transmit light; a detector 10 which detects outgoing light 23 obtained by passing incident light 21, emitted from a light source 9 and entering from the first vacuum chamber transmission window 14A, through a material 15 blown from a crucible 5 of a vapor deposition source 2 and vaporized, reflecting the light at least once on a reflection surface 6 near a blow-out port 5e of the vaporized material of the crucible 5, and then making the light outgo to the outside of the vacuum chamber 1 from the second vacuum chamber transmission window 14B;and a measuring apparatus 11 for measuring the concentration of the vaporized material 15 using the incident light 21 entering into the vacuum chamber 1 from the light source 9 and the outgoing light 23 detected by the detector 10.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vacuum deposition apparatus that performs deposition on a substrate with a vaporized material in the production of an organic thin film such as an organic EL (Electro-Luminescence) element.

  In vacuum deposition, a material to be deposited and a substrate are placed facing each other in a vacuum chamber, and the material is heated and melted and vaporized or sublimated to form the surface of the facing substrate. This is a technique for depositing thin films. As a method for heating the material, a resistance heating type heater, an electron gun, high-frequency heating, or the like can be given.

Conventionally, vacuum deposition has been widely used for forming a surface antireflection film for an imaging lens used in a camera, or for aluminum coating on a film used for packaging confectionery or the like. As a thin film material to be deposited, an inorganic material such as SiO ₂ , aluminum, or magnesium fluoride is used.

  In recent years, research and development of next-generation devices using organic materials has been actively conducted. For example, an organic EL display, an organic EL illumination, an organic solar battery, and an organic semiconductor. In order to form the organic material film of these next-generation devices, generally, a method in which an ink dissolved in a solvent is applied and baked, or the above-described vacuum deposition method is used.

  In many organic devices, the thickness or elemental composition of the organic thin film layer greatly influences its performance. It is necessary to control. There are two types of methods for controlling the film thickness with high precision in a vacuum deposition apparatus. The first is a system in which a film thickness measurement substrate is placed in the vicinity of a substrate serving as a product, light is transmitted through the substrate and a thin film formed on the substrate, and the film thickness is optically measured. The second method is not to directly measure the thin film formed on the substrate but to measure the amount of vapor evaporated and indirectly measure the thickness of the thin film formed on the substrate. As the latter measuring apparatus, there are a crystal oscillator type and an optical type. Here, an optical vapor amount measuring method will be described (see, for example, Patent Document 1).

  Therefore, a conventional optical vapor measurement method will be described with reference to FIG.

  FIG. 6 is a schematic cross-sectional view of a conventional vacuum vapor deposition apparatus having an optical vapor amount measuring means. The vacuum chamber 101 can create a vacuum state by being evacuated by the vacuum pump 104. Inside the vacuum chamber 101, a substrate 103 on which a thin film is formed is disposed on the upper portion thereof, and a crucible 105 is disposed on the lower portion of the vacuum chamber 101 so as to face the substrate 103. The crucible 105 is filled with a material 107 for evaporating to form a thin film.

  In addition, a heating element 108 for evaporating the material 107 by raising the temperature of the crucible 105 is provided outside the crucible 105, and the heating element 108 is controlled by a heating element control unit 113 placed outside the vacuum chamber 101. Its output is controlled.

  In FIG. 6, two crucibles 105, two materials 107 and two heating elements 108 are shown so that two different materials can be evaporated simultaneously.

When each crucible 105 is heated by the heating element 108, the material 107 is vaporized and becomes vaporized materials 115 a and 115 b, facing toward the substrate 103 with a certain spread angle, and adhering to the substrate 103 to form a thin film.
On both sides of the vacuum chamber 101 between the crucible 105 and the substrate 103, a light source 109 and a detector 110 are arranged. Light from the light source 109 is received by the detector 110 through the vaporized materials 115a and 115b.

  From a comparison between light at the time of light emission and light at the time of light reception, there is a certain relationship between the concentration of the vaporized materials 115a and 115b measured indirectly and the thickness of the thin film deposited on the substrate 103. To do. For this reason, the film thickness of the thin film deposited on the substrate 103 can be obtained from the measurement result of light at the time of light reception.

  Therefore, the light at the time of light reception is measured, the film thickness of the thin film deposited on the substrate 103 is indirectly measured, and the instruction signal to the heating element control unit 113 that controls the heating temperature of the heating element 108 of each crucible 105 Is provided. The heating element control unit 113 can control the heating temperature of the heating element 108 of the crucible 105 based on the instruction signal from the analysis unit 111, and the film thickness of the thin film formed on the substrate 103 is controlled.

  Of course, the comparison between the light at the time of light emission and the light at the time of light reception described above is performed in the case where vaporized materials 115a and 115b exist. In order to obtain the film thickness of the thin film deposited on the substrate 103 by the comparison. Therefore, it is necessary to obtain in advance the relationship between the comparison result and the concentration of the vaporized materials 115a and 115b, that is, the thickness of the thin film.

  Furthermore, it goes without saying that the same measurement result in the case where the vaporized material 108 prepared in advance does not exist may be used to obtain the film thickness of the thin film with higher accuracy.

Japanese Patent No. 4840150

  However, in the above-described conventional vapor deposition apparatus (see FIG. 6), the temperature of the light source 109 and the detection unit 110 is considerably lower than the temperature of the vaporized material, so when the vaporized material 115a reaches the light source 9 and the detection unit 110, It adheres there, the intensity of the light from the light source 109 decreases, and the sensitivity of the detection unit 110 decreases, making it difficult to measure the film thickness with high accuracy. The adhesion can be reduced by moving the light source 109 and the detection unit 110 away from the crucible 105 as much as possible. On the other hand, the concentration of the vaporized material 115a decreases as the distance from the crucible 105 decreases. It ’s not going to be a fundamental solution.

  Further, when a plurality of materials 107 are vapor-deposited simultaneously as shown in FIG. 6, the vaporized materials 115a and 115b jump out of the respective crucibles 105 and mix after a while. It is very difficult to measure each evaporation rate. Of course, light having an optimum wavelength is usually used in view of the absorption characteristics peculiar to the material, but interference with the other material is unavoidable, and measurement with high accuracy is difficult.

  Further, as shown in FIG. 7, in general, in the vacuum vapor deposition method using the crucible 105, depending on the type of evaporation material, the filling amount or remaining amount of the material 107 in the crucible 105, or the conditions such as the crucible temperature, The spread angle of the materials 115c and 115d vaporized from the respective crucibles 105 varies. In FIG. 7, the same elements as those in FIG. In the above-described method in which the light emitted from the light source 109 passes through the vaporized materials 115c and 115d and is detected by the detection unit 110 in the vicinity of the substrate 103, the measurement value is also changed due to any change in these conditions. There is a problem that it fluctuates.

  An object of the present invention is to provide a vacuum deposition apparatus that can measure the thickness of a deposited film with higher accuracy in consideration of the above-described conventional problems.

In order to achieve the above object, the vacuum vapor deposition apparatus of the present invention is arranged such that the vaporized material is disposed in the vacuum chamber while measuring the concentration of the vaporized material from a vapor deposition source disposed in the vacuum chamber. A vacuum deposition apparatus for forming a thin film by vapor deposition on the surface of the substrate,
A light source disposed outside the vacuum chamber;
A first vacuum chamber transmission window disposed on the first side wall of the vacuum chamber, through which incident light emitted from the light source is transmitted;
A second vacuum chamber transmission window disposed on a second side wall facing the first side wall of the vacuum chamber and transmitting light;
The incident light emitted from the light source and incident from the first vacuum chamber transmission window is blown out from the crucible of the vapor deposition source and passed through the vaporized material, and near the vaporized material outlet of the crucible. And a detection device for detecting the emitted light emitted from the second vacuum chamber transmission window and emitted from the second vacuum chamber transmission window as emitted light to the outside of the vacuum chamber. ,
A measuring device that measures the concentration of the vaporized material using the incident light that enters the vacuum chamber from the light source and the emitted light that is emitted outside the vacuum chamber and detected by the detection device; .

  By the said aspect of this invention, the vacuum evaporation apparatus which can perform the film thickness measurement of a vapor deposition film with high precision by a comparatively simple structure can be provided.

1 is a schematic cross-sectional view of a vacuum vapor deposition apparatus according to a first embodiment of the present invention. Schematic sectional view (front view) of a vacuum vapor deposition apparatus according to a second embodiment of the present invention. Schematic sectional view (plan view) of a vacuum deposition apparatus according to a second embodiment of the present invention. Schematic sectional view (front view) of a vacuum deposition apparatus according to a third embodiment of the present invention. Schematic sectional view (plan view) of a vacuum deposition apparatus according to a third embodiment of the present invention. Schematic sectional view of a conventional vapor deposition apparatus disclosed in Patent Document 1 Schematic sectional view of a conventional vapor deposition apparatus disclosed in Patent Document 1

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the configuration of the vacuum evaporation apparatus according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view of a vacuum deposition apparatus according to a first embodiment of the present invention.

  The vacuum deposition apparatus 30 includes a vacuum chamber 1 and a deposition source 2 disposed inside the vacuum chamber 1, and the material 15 vaporized in the deposition source 2 is disposed above the inside of the vacuum chamber 1. A thin film is formed by vapor deposition on the surface of the substrate 3. More specifically, the vacuum deposition apparatus 30 includes a light source 9, a first vacuum chamber transmission window 14 </ b> A, a second vacuum chamber transmission window 14 </ b> B, a crucible 5, a detector 10, and an analysis unit 11. It is composed. Further, the vacuum vapor deposition apparatus 30 includes the arithmetic processing unit 12.

  The vacuum chamber 1 can create a vacuum state by being evacuated by the vacuum pump 4. A substrate 3 for depositing a thin film by vacuum vapor deposition is disposed above the inside of the vacuum chamber 1, and is disposed in a convex bottom 1 c that protrudes downward at the bottom of the vacuum chamber 1 so as to face the substrate 3. Arranges the vapor deposition source 2.

  The vapor deposition source 2 includes a crucible 5 that can hold a material 7 that is evaporated to form a thin film, and a heating element 8 that is disposed outside the crucible 5 and heats the crucible 5.

  The crucible 5 includes a material container 5d filled with a material 7 to be evaporated, a blowout port 5e through which the material 7 is vaporized and blown out, and a conical ring-shaped reflective surface (crucible reflective surface) near the blowout port 5e of the vaporized material 15 6 and a narrow portion 16 which is located between the material container 5d and the outlet 5e and is narrower than the opening area of the outlet 5e and the lateral material passage cross-sectional area of the material container 5d. Yes. Since the conical ring-shaped reflecting surface 6 provided at the outlet 5e of the crucible 5 is formed integrally with the crucible 5, the material 7 is always heated to an abnormal temperature at which the material 7 evaporates, and the vaporized material 15 is There is no adhesion and no reduction in reflectivity occurs. Further, by reflecting at the outlet 5e of the crucible 5, it becomes possible to make multiple reflections at the portion where the concentration of the vaporized material 15 is the highest, and simply from the transmission window provided on the side wall of the vacuum chamber 1 to the top of the crucible. High measurement accuracy can be expected, which cannot be realized by the conventional method of passing light in a straight line through a transmission window provided on the other side wall.

  The output of the heating element 8 is controlled by a heating element control unit 13 disposed outside the vacuum chamber 1.

  Therefore, by heating the crucible 5 with the heating element 8, the material 7 is vaporized to form the vaporized material 15, and the vaporized material 15 faces with a certain spread angle from the crucible 5 toward the substrate 3. By attaching to the substrate 3, it becomes a thin film.

  A light source 9 and a detector 10 are arranged outside the both side surfaces of the vacuum chamber 1 between the crucible 5 and the substrate 3. Light from the light source 9 is received by the detector 10 through the vaporized material 15.

  The first vacuum chamber transmission window 14 </ b> A is fitted and fixed to the first side wall 1 a of the vacuum chamber, and the first light (incident light) 21 emitted from the light source 9 is transmitted toward the inside of the vacuum chamber 1. 14 A of 1st vacuum chamber permeation | transmission windows are arrange | positioned in the part with very few adhesion of a vapor deposition film in the side near the lower crucible 5 among the 1st side walls 1a.

  The second vacuum chamber transmission window 14 </ b> B is fitted and fixed to the second side wall 1 b facing the first side wall 1 a of the vacuum chamber 1, and third light (emitted light) 23 is emitted from the vacuum chamber 1. Permeates outward. Similarly to the first vacuum chamber transmission window 14A, the second vacuum chamber transmission window 14B is also arranged in a portion of the second side wall 1b on the side close to the lower crucible 5 where the deposition film is extremely small. ing.

  About the place where these 1st vacuum chamber permeation window 14A and 2nd vacuum chamber permeation window 14B are installed, by selecting and installing the place where vaporized material 15 does not adhere, or the place where adhesion speed is very slow, It is possible to ensure measurement accuracy and extend the maintenance cycle. Further, the vaporized material 15 can be prevented from adhering by heating the transmission windows 14A and 14B with a heating mechanism (not shown).

  Therefore, the first light 21 transmitted through the first vacuum chamber transmission window 14A passes through the material 15 which is blown out from the crucible 5 and vaporized, and is reflected in the vicinity of the blowout port 5e of the vaporized material 15 in the crucible 5. The light is reflected at least once by the surface (the crucible reflection surface) 6 to be the second light 22. As an example, in FIG. 1, after the first light 21 is reflected once by the right reflecting surface (the crucible reflecting surface) 6 to become the second light 22, the second light 22 is opposed to the left side. After being reflected once again by the reflecting surface (crucible reflecting surface) 6, the light is then emitted as the third light 23 from the second vacuum chamber transmission window 14 B to the outside of the vacuum chamber 1 and enters the detector 10. Then, detection (intensity measurement) is performed.

  The detector 10 functions as an example of a detection device, detects the second light 22 that has passed through the first vacuum chamber transmission window 14A and the transmission window 14B of the second vacuum chamber, and performs intensity measurement. Thus, as the light entering the detector 10, the first light 21 incident from the first vacuum chamber transmission window 14 </ b> A passes through the vaporized material 15 blown out from the crucible 5, and is vaporized material. The second light 22 is reflected at least once by a part of the reflecting surface 6 near the 15 outlets 5 e. Thereafter, the second light 22 is passed through the vicinity of the blowout port 5 e and then reflected by a part of another reflecting surface 6 to be a third light 23. Thereafter, the third light 23 is emitted out of the vacuum chamber 1 from the second vacuum chamber transmission window 14B. Here, the meaning of reflecting the first light 21 by a part of the reflecting surface 6 near the outlet 5e of the vaporized material 15 is that the first light 21 is applied to a particularly high concentration portion of the vaporized material 15. It is for letting it pass. As a result, if the intensity of the light that has passed through the portion having a particularly high concentration is measured by the detector 10, the intensity of the light attenuated when passing through the vaporized material 15 can be measured with high accuracy. The film thickness of the deposited film can be accurately measured.

  The analysis unit 11 can function as an example of the optical density measurement unit 100 or a measurement device. In the analysis unit 11, the concentration of the vaporized material 15 is measured by using the first light 21 emitted from the light source 9 and the third light 23 detected by the detector 10, thereby measuring the intensity. The measurement result in the analysis unit 11 is output from the analysis unit 11 to the arithmetic processing unit 12.

  The arithmetic processing unit 12 functions as an example of a film forming condition control unit. The arithmetic processing unit 12 converts the film formation rate on the substrate 3 based on the measurement result in the analysis unit 11 and calculates the difference from the desired film formation rate. Then, the arithmetic processing unit 12 calculates a control numerical value of the heating element 8 for obtaining a desired film forming speed, and sends an instruction to the heating element control unit 13. The heating element controller 13 controls the heating of the heating element 8 as an example of a film forming condition based on an instruction from the arithmetic processing unit 12.

  In this way, the difference between the intensity of the emitted light 21 and the intensity of the detected light 23 is obtained by the arithmetic processing unit 12, and the difference means that the difference is absorbed by the vaporized material 15. In the arithmetic processing unit 12, the concentration of the vaporized material 15 and the film formation rate on the substrate 3 can be estimated.

  That is, based on a comparison between the light 21 at the time of light emission and the light 23 at the time of light reception, there is a certain relationship between the concentration of the vaporized material 15 measured indirectly and the film thickness of the thin film deposited on the substrate 3. Exists. For this reason, in the arithmetic processing part 12, the film thickness of the thin film vapor-deposited on the board | substrate 3 can be obtained from the measurement result of the light 23 at the time of light reception.

  Therefore, the light 23 at the time of light reception is measured, the film thickness of the thin film deposited on the substrate 3 is indirectly measured, and the heating temperature of the heating elements 8 of each crucible 5 is controlled by the heating element control unit 13. An instruction signal to the heating element control unit 13 is sent from the arithmetic processing unit 12. The heating element control unit 13 can control the heating temperature of the heating element 8 of the crucible 5 based on the instruction signal from the arithmetic processing unit 12, and the film thickness of the thin film formed on the substrate 3 is controlled.

  The comparison between the light 21 at the time of light emission and the light 23 at the time of light reception is performed in the case where the vaporized material 15 is present. In order to obtain the film thickness of the thin film deposited on the substrate 3 by the comparison, It is necessary to obtain in advance the relationship between the comparison result and the concentration of the vaporized material 15, that is, the thickness of the thin film.

  Next, the analysis unit 11 of the material 15 vaporized from the crucible 5 during vacuum deposition will be described. The first light 21 emitted from the light source 9 travels to the crucible 5 while passing through the vaporized material 15 through the transmission window 14A fitted in the first side wall 1a of the vacuum chamber 1. The light traveling toward the crucible 5 is reflected by a part of the crucible reflection surface 6 provided at the outlet 5 e of the crucible 5 and becomes the second light 22. The second light 22 passes through the region with the highest density of the vaporized material 15 ejected from the outlet 5 e of the crucible 5, is reflected again by a part of the crucible reflection surface 6, and becomes the third light 23. . The third light 23 again passes through the vaporized material 15, passes through the transmission window 14 </ b> B, is guided to the outside of the vacuum chamber 1, and its intensity is measured by the detector 10. The measurement result is analyzed by the analysis unit 11 and converted into a film formation rate on the substrate 3, and the calculation processing unit 12 receives the result and calculates a difference from a desired film formation rate. Then, the arithmetic processing unit 12 calculates a control value of the heating element 8 for obtaining a desired film forming speed, and sends an instruction to the heating element control unit 13. The heating element control unit 13 controls the heat generation of the heating element 8 based on the sent instruction. By this series of actions, the deposition rate can be kept constant at all times. By feeding back the information on the deposition rate on the substrate estimated as described above to the means for controlling the temperature of the crucible 5, the deposition rate can be controlled. With such a configuration, it is possible to estimate the deposition rate in vacuum deposition with high accuracy, and in addition to the means for controlling the evaporation rate of the material in the crucible 5, the thickness of the thin film formed on the substrate with high accuracy. Can be controlled.

In this example, an experiment was performed using Alq ₃ (tris (8-quinolinolato) aluminum) widely used as an organic EL material as an evaporation material. As the light source 9, a semiconductor laser having a wavelength of 405 nm that is close to the absorption wavelength range of Alq _{3 and} has high versatility was used. Sapphire was used as the material of the transmission windows 14A and 14B, and a heating mechanism for heating the transmission windows 14A and 14B and its surroundings was provided to prevent the evaporation material from adhering.

  Details of the crucible 5 used in this example will be described. The crucible 5 was made of stainless steel. The reflection surface 6 described above was manufactured at an inclination angle of 45 degrees and mirror-polished. The inner diameter of the portion filled with the material of the crucible 5 was about 30 mm, and the inner diameter of the narrow portion 16 between the outlet 5e was about 10 mm. Although there is a slight dimensional change of the whole crucible due to heating, since the light is reflected by a part of the reflecting surface 6, the optical axis can be adjusted with a little adjustment. Once the adjustment can be made, the temperature of the crucible is almost constant and the measurement can be continued with the specified optical path length.

  In the present embodiment, the evaporation rate of the material is controlled by the output of the heating element 8, but the conductance can be adjusted with a variable valve or the like until the material is vaporized in the crucible and blown out. A method of enclosing the mechanism in a crucible can also be applied. In the case of a system in which a film is formed while passing through the substrate, which is often used for a large-sized substrate, a desired film thickness can be realized by adjusting the transport speed of the substrate.

  According to the embodiment, the incident light 21 emitted from the light source 9 and entering the vacuum chamber 1 is blown out from the crucible 5 at least once on a part of the reflection surface 6 near the blowout port 5e of the material 15 that is vaporized. After the reflection, the film thickness of the deposited film can be measured with higher accuracy by a relatively simple configuration in which the light is reflected and then emitted as outgoing light outside the vacuum chamber 1.

(Second Embodiment)
Next, the structure of the vacuum evaporation apparatus 31 of 2nd Embodiment is demonstrated, referring FIG.2 and FIG.3. FIG. 2 is a schematic cross-sectional view (front view) of a vacuum vapor deposition apparatus 31 according to the second embodiment of the present invention. FIG. 3 is the same (plan view). Since the reference numerals are the same as those in FIG. 1, the description of the common parts is omitted.

  In the second embodiment, a configuration in the case where two different materials are evaporated at the same time to form a film on the substrate 3 will be described. In the front view shown in FIG. 2, various components such as the crucible 5 are actually arranged in the depth direction of the drawing. In FIG. 2, only the front one is shown as a representative. In FIG. 3, the front member or device is indicated with b at the end, and the rear member or device is indicated with a at the end. Various components include the crucibles 5a and 5b, the crucible reflection surfaces 6a and 6b, the light sources 9a and 9b, the detectors 10a and 10b, the transmission windows 14Aa and 14Ab, the transmission windows 14Ba and 14b, and the vaporized material 15a. , 15b and first to third lights 21a-23a, 21b-23b, respectively.

  In FIG. 3, the plane sectional view of the vacuum evaporation system 31 of this 2nd Embodiment is shown. The substrate 3 is shown virtually. FIG. 3 is a diagram of the vacuum evaporation apparatus 31 from above, and the heating element 8, the detection unit 11, the calculation unit 12, and the heating element control unit 13 are omitted. As shown in FIG. 3, the two crucibles 5a and 5b are arranged adjacent to each other with a certain distance.

  The first light emitted from the light source 9a for measuring the concentration of the vaporized first material 15a by a part of the crucible reflection surface 6a provided at the outlet of the crucible 5a filled with the first material 7a. The light 21a is reflected and becomes the second light 22a. The second light 22a passes through the portion with the highest concentration of the vaporized material 15a blown out from the crucible 5a. Thereafter, the second light 22a is reflected again by a part of the crucible reflection surface 6a to become the third light 23a, which is incident on the detector 10a.

  On the other hand, the analysis unit 11 as an example of a measuring device that measures the concentration of the vaporized second material 15b is also arranged. In the figure, b is given at the end. That is, the first light emitted from the light source 9b for measuring the concentration of the vaporized second material 15b by a part of the crucible reflection surface 6b provided at the outlet of the crucible 5b filled with the second material 7b. The first light 21b is reflected to become the second light 22b. The second light 22b passes through the highest concentration portion of the vaporized material 15b blown out from the crucible 5b. Thereafter, the second light 22b is reflected again by a part of the crucible reflection surface 6b to become the third light 23b, which is incident on the detector 10b.

  A characteristic point of the second embodiment is that light 21a to 23a for measuring the concentration of one vaporized material 15a does not pass through the other vaporized material 15b. That is, the lights 21a and 23a do not pass through the other vaporized material 15b, and the lights 21b and 23b do not pass through the one vaporized material 15a. Two or more crucibles 5a and 5b holding different materials 7a and 7b, respectively, and each incident light 21a and 21b for measuring the concentration of each vaporized material 15a and 15b is a crucible of another material. It does not pass through an inverted conical region formed by rotating a straight line that forms an angle of 45 degrees with a vertical line passing through the center of the outlet 5e at the center of the outlet 5e of 5b, 5a (in other words, other It passes through an area other than the inverted conical area of the material. For example, the incident light 21a for measuring the concentration of one material 7a mainly passes through an inverted conical region of one material 7a and does not pass an inverted conical region of the other material 7b. . On the contrary, the incident light 21b for measuring the concentration of the other material 7b mainly passes through the inverted conical region of the other material 7b and does not pass through the inverted conical region of the one material 7a. Yes. With such a configuration, the deposition rate of each material can be obtained with high accuracy without interfering with other materials.

  Moreover, even if it passes through the region of the other material partially vaporized due to the configuration, the influence of the other material is negligible because the concentration in the vicinity of the crucible reflection surfaces 6a and 6b is overwhelmingly high. it is conceivable that.

  In the second embodiment, in addition to the effects of the first embodiment, as described above, a plurality of crucibles 5a and 5b are arranged in the same vacuum chamber 1, and the material is evaporated from the plurality of crucibles 5a and 5b at the same time. In this case, by using this configuration, it is possible to arrange the optical path for measuring the concentration of a certain type of vaporized material 15a without passing through the other type of vaporized material 15b. No interference occurs between the different materials 15a and 15b. As a result, the deposition rate of each material can be obtained with high accuracy.

(Third embodiment)
Next, the structure of the vacuum evaporation apparatus 32 of 3rd Embodiment is demonstrated, referring FIG.4 and FIG.5. FIG. 4 is a schematic cross-sectional view (front view) of the third embodiment. Actually, various components such as the crucible 5 are arranged in the depth direction of the paper surface, but only the front one is shown as a representative in this figure.

  In the third embodiment, unlike the first and second embodiments, only one transmission window 14 (14a and 14b) is arranged for each material 7a and 7b. Therefore, the first light 21 enters the vacuum chamber 1 from the transmission window 14 (14a or 14b), and the third lights 23a and 23b are emitted from the transmission window 14 (14a or 14b) to the outside of the vacuum chamber 1. To do.

  That is, the first light beams 21 a and 21 b emitted from the light sources 9 a and 9 b are guided to the inside of the vacuum chamber 1 through the respective transmission windows 14 a and 14 b fitted in the side walls of the vacuum chamber 1. Thereafter, the first lights 21a and 21b pass through the vaporized materials 15a and 15b blown out from the crucible 5 and are part of the crucible reflecting surfaces 6a and 6b provided at the blowout ports of the crucibles 5a and 5b. It is reflected and becomes the third light 23a, 23b. The third lights 23a and 23b pass through the transmission windows 14a and 14b described above, and are again guided to the outside of the vacuum chamber 1 and measured by the detectors 10a and 10b.

  The basic measurement principle is the same as in the first and second embodiments, but the optical system is simple because each of the materials 7a and 7b can be configured with one transmission window 14a and 14b. The transmission windows 14a and 14b are also provided with only one place for each of the materials 7a and 7b, so that the layout has a high degree of freedom.

  FIG. 5 shows a schematic sectional view (plan view). In the same manner as described in the second embodiment, two crucibles 5a and 5b are arranged adjacent to each other with a certain interval in order to evaporate two different materials 7a and 7b simultaneously. On the other hand, the transmission windows 14a and 14b are fitted on an appropriate surface of the vacuum chamber 1 to guide the measurement light beams 21a, 23a, 21b, and 23b. As described above, since the optical paths for measurement can be integrated, the layout of the crucibles 5a and 5b has a degree of freedom.

  According to the embodiment, in addition to the effects of the first and second embodiments, it is only necessary to arrange one transmission window 14a, 14b for each material 7a, 7b, so the optical system is simple, The effect of having a high degree of freedom in layout can be achieved.

  In addition, it can be made to show the effect which each has by combining arbitrary embodiment or modification of the said various embodiment or modification suitably. In addition, combinations of the embodiments, combinations of the examples, or combinations of the embodiments and examples are possible, and combinations of features in different embodiments or examples are also possible.

  The vacuum vapor deposition apparatus in the present invention can measure the film thickness of a vapor deposition film with higher accuracy, and performs vapor deposition on a substrate with a vaporized material in the production of an organic thin film such as an organic EL element. Useful for use in equipment.

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 1a 1st side wall 1b 2nd side wall 1c Convex part 2 Deposition source 3 Substrate 4 Vacuum pump 5, 5a, 5b Crucible 5d Material accommodating part 5e Outlet 6, 6a, 6b Crucible reflective surface 7, 7a, 7b Material 8 Heating element 9, 9a, 9b Light source 10, 10a, 10b Detector 11 Analysis unit 12 Arithmetic processing unit 13 Heating element control unit 14A, 14Aa, 14Ab, 14B, 14Ba, 14Bb Transmission window 15, 15a, 15b Evaporated material 16 Narrow Portions 21, 21a, 21b First light 22, 22a, 22b Second light 23, 22a, 23b Third light 30, 31, 32 Vacuum deposition apparatus 100 Optical density measuring apparatus

Claims (5)

A vacuum deposition apparatus that forms a thin film by depositing the vaporized material on the surface of a substrate disposed inside the vacuum chamber while measuring the concentration of the material vaporized from a deposition source disposed inside the vacuum chamber. There,
A light source disposed outside the vacuum chamber;
A first vacuum chamber transmission window disposed on the first side wall of the vacuum chamber, through which incident light emitted from the light source is transmitted;
A second vacuum chamber transmission window disposed on a second side wall facing the first side wall of the vacuum chamber and transmitting light;
The incident light emitted from the light source and incident from the first vacuum chamber transmission window is blown out from the crucible of the vapor deposition source and passed through the vaporized material, and near the vaporized material outlet of the crucible. And a detection device for detecting the emitted light emitted from the second vacuum chamber transmission window and emitted from the second vacuum chamber transmission window as emitted light to the outside of the vacuum chamber. ,
A measuring device that measures the concentration of the vaporized material using the incident light that enters the vacuum chamber from the light source and the emitted light that is emitted outside the vacuum chamber and detected by the detection device; ,
A vacuum deposition apparatus comprising: The crucible has a conical ring-shaped reflecting surface in the vicinity of the gasifying material outlet,
After the incident light that has entered from the first vacuum chamber transmission window of the first side wall is reflected once by the reflecting surface in the vicinity of the vaporized material outlet of the crucible facing the first side wall, Reflected one more time on the reflective surface near the outlet of the vaporized material of the crucible on the side close to the first side wall, and then outside the vacuum chamber from the second vacuum chamber transmission window on the second side wall. The vacuum deposition apparatus according to claim 1, which is emitted as the emitted light. The crucible is
A material container filled with the material to be vaporized;
An outlet from which the material vaporizes and blows out;
Between the material container and the outlet, a narrow portion having a material passage cross-sectional area smaller than the outlet,
The reflective surface that reflects the incident light for measuring the concentration of the vaporized material is disposed on the outlet side of the narrow portion,
The vacuum evaporation apparatus of Claim 1 or 2. Having two or more crucibles each holding different materials;
Each light for measuring the concentration of each vaporized material rotates at the center of the outlet of the crucible of the other material as a vertex and a straight line that forms an angle of 45 degrees with the vertical line passing through the center of the outlet. The vacuum evaporation system according to any one of claims 1 to 3, which does not pass through an inverted conical region formed.   The apparatus further comprises a film formation condition control unit that controls film formation conditions for vaporizing the vaporized material on the surface of the substrate based on the concentration of the vaporized material measured by the measurement apparatus. 4. The vacuum evaporation apparatus according to any one of 4.