JP2005120441A - Optical thin film deposition device, and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a correcting mechanism for deterioration in a film thickness distribution caused by the change of an evaporation coefficient in a film deposition device for a dielectric multilayer film optical filter. <P>SOLUTION: The optical thin film deposition device is provided with: a means for three-dimensionally detecting an electron beam irradiation position, the irradiation width thereof, and the position and shape of the fused part in an evaporation substance; a means for measuring the in-plane film thickness distribution in a film-deposited substrate; a means for controlling the electron beam irradiation position and the irradiation width thereof; and a means for making the position of an evaporation source to the film-deposited substrate variable. The electron beam is controlled in such a manner that the beforehand set electron beam irradiation position and irradiation width are held, the position of the evaporation source is controlled in such a manner that the beforehand set height of the fused face in the evaporation substance is held, and the position of the evaporation source is made variable to the position for uniformizing the in-plane film thickness distribution in the film-deposited substrate. Thus, the film thickness distribution is continuously monitored, and is fed-back to the position of the evaporation source and the irradiation conditions of the electron beam, thus, the uniformity of the film thickness distribution remarkably improves. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an optical thin film forming apparatus, which improves the film thickness distribution in the optical thin film forming film forming substrate and realizes an optical thin film forming apparatus with high productivity.

  In a high-density wavelength division multiplexing transmission system (hereinafter referred to as DWDM), an optical multiplexer / demultiplexer is used for wavelength multiplexing and demultiplexing of multiplexed optical signals, but it is used inside the optical multiplexer / demultiplexer. Optical specifications such as transmission bandwidth, flatness, transmission loss, and suppression ratio with adjacent wavelengths required for a dielectric multi-layer narrowband bandpass filter (hereinafter referred to as NBPF) It is a strict value for high speed and large capacity.

  The NBPF is one of the applications of optical thin film using light interference, and its structure is made by alternately depositing high and low refractive index dielectric materials and using multiple reflections from the layer interface to obtain desired filtering characteristics. Is what you get. FIG. 1 shows the basic structure of NBPF. The optical film thickness of each layer is λ / 4 with respect to the transmission wavelength: λ, that is, λ / 2 for a pair of a high refractive index substance (31) and a low refractive index substance (32). As a result, the reflected light from the layer interface is added in phase to form the reflective band layer (33). There are two reflection band layers (33), and a spacer layer (34) with an optical film thickness of an integral multiple of λ / 2 is placed between them to form a Fabry-Perot structure filter and form a cavity (36). To do. Some NBPFs have a multi-cavity structure in which a plurality of Fabry-Perot filters are connected via a coupling layer (35), and a multilayer structure having 100 or more layers is also available.

  The NBPF actually used inside the multiplexer / demultiplexer is a chip of about 1.4 mm square. In the manufacturing process, for example, after depositing the dielectric material on a film formation substrate of about Φ100 mm, the chip shape Disconnected. In order to obtain more chips satisfying the optical characteristics from a single film formation substrate, it is extremely important to make the film thickness distribution in the substrate uniform, and the film thickness distribution in the substrate is 0.01% or less. Accuracy is required.

FIG. 2 shows a configuration diagram of a conventional vacuum film forming apparatus for NBPF. The vacuum container (1) is evacuated to a level of 1 × 10 ⁻⁵ Pa by a vacuum pump (not shown) such as an oil diffusion pump or a cryopump.
The film formation substrate (6) attached to the center of the substrate dome (5) is rotated at 1000 rpm together with the substrate dome (5) by a high-speed rotation mechanism (not shown) in order to make the film thickness distribution in the substrate uniform (Japanese Patent Application 2002). -207355), heated by a substrate heater sheath heater (7) and a halogen heater (21).
Further, the temperature of the film formation substrate (6) is measured using a radiation type thermometer (17), the actual measurement data is input to the temperature controller (18), and the temperature controller (18) is set at a preset temperature. Compare and calculate the measured temperature and the measured temperature, and based on the results, adjust the power for the halogen heater so that the substrate temperature is always constant even if the deposition substrate (6) receives radiant heat from the electron beam or heat generated during plasma generation. Control (19) (Japanese Patent Application No. 2002-229025).

An electron beam evaporation source (2) is used to form a dielectric film which is an optical thin film. The geometrical arrangement of the electron beam evaporation source (2) and the film formation substrate (6) is optimized so that the film thickness distribution in the film formation substrate (6) is uniform.
During film formation by the electron beam evaporation source (2), when high frequency power (frequency: 13.56 MHz) output from the high frequency power source (22) is directly applied to the substrate dome (5), the substrate dome (5) and the evaporation source ( 2) Glow discharge is generated in the space and becomes a plasma state, and a self-induced negative DC electric field is generated on the surface of the film formation substrate (6) attached to the substrate dome (5). A thin film having a packing density is formed (Japanese Patent Laid-Open No. 2001-73136). The matching box (23) matches the output impedance of the high-frequency power source (22) and the impedance of the discharge mechanism including the substrate dome (5) as a load.
The quartz film thickness sensor (4) detects the evaporation rate and feeds back a detection signal to an electron beam controller (not shown) to control the film formation rate to a constant value.

  Optical film thickness measuring equipment includes laser light source (11), optical fiber (13), exit tube (14) monochromatic photometer (15), spectroscopic photometer (25), optical power meter (27) and controller Mainly composed of (10) parts. Laser light emitted from the laser light source (11) is incident on the film formation substrate (6) via the depolarizer (12), the optical fiber (13), the emission tube (14), and the lower viewing window (8). Laser light that has passed through the film-forming substrate (6) passes through the upper viewing window (9) and a semi-transparent mirror (26) disposed at an angle of 45 ° with respect to the optical axis. Is incident on the vessel (15) and photoelectrically converted into an electrical signal. The controller (10) performs arithmetic processing on the photoelectrically converted electrical signal, and when the transmittance reaches the extreme value of λ / 4, the shutter (3) is closed, the film formation is terminated, and the dielectric materials are sequentially stacked. (Monochromatic photometry).

The other is incident on the spectral characteristic measuring light receiver (25) through the disturbance light cut filter (29). The ambient light cut filter (29) prevents light emitted during plasma generation, light generated during electron beam evaporation, and light emitted from a halogen heater from entering the light receiver for measuring spectral characteristics as light noise. The optical power meter (27) measures the output of the spectral characteristic measuring light receiver (25) in synchronization with the wavelength sweep of the wavelength tunable laser. The computer (28) reads the measurement data of the optical power meter (27) for each measurement and sequentially compares it with the NBPF spectral characteristic simulation result. When the measurement data during the film formation and the simulation result match or approach each other, the shutter (3) is closed, film formation is completed, and dielectric materials are sequentially stacked (spectral characteristic measurement method: Japanese Patent Application No. 2003-126404).
For the film thickness control of each layer, a monochromatic photometry method and a spectral characteristic measurement method are appropriately selected.

Japanese Patent Application No. 2002-207355 Japanese Patent Application No. 2002-229025

表わされる。ここで、ｔ／ｔ₀：規格化膜厚、Ｓ：基板、Ｏ：蒸発源位置、Ｈ：基板の高さ、Ｌ：蒸発源と基板間の直線距離、ｎ：蒸発係数、およびα：基板と垂線とＬとのなす角である。 The geometrical arrangement of the electron beam evaporation source (2) and the film formation substrate (6) described above is arranged so that the film thickness distribution in the film formation substrate is uniform. Figure 3 shows the film thickness distribution in the substrate surface.

Represented. Where t / t ₀ : normalized film thickness, S: substrate, O: evaporation source position, H: substrate height, L: linear distance between evaporation source and substrate, n: evaporation coefficient, and α: substrate And the angle between the perpendicular and L.

となり、したがって

となる。Ｈは成膜基板の高さであり一定となるが、Ｌはドームが回転することで変化する。
Ｌは、蒸発源距離：Ｐ[mm]，ドーム高さ：Ｈ[mm]，シミュレーションポイント（基板中心からの距離）：Ｒ[mm]及びドーム回転角度：Φ[rad]により次式で表される。

したがって、（２）、（３）式より

となる。
（４）式より基板面内分布は、蒸発係数：ｎ（蒸発源から蒸発物質がどの程度の広がりを持って蒸発するかを表す）及び基板と蒸発源の幾何学的配置（Ｈ：基板高さ、Ｐ：蒸発源偏心距離）に依存することが判る。 Since the film formation substrate (6) attached to the substrate dome (5) is a flat substrate, from FIG.

And therefore

It becomes. H is the height of the film formation substrate and is constant, but L changes as the dome rotates.
L is expressed by the following equation using evaporation source distance: P [mm], dome height: H [mm], simulation point (distance from the substrate center): R [mm], and dome rotation angle: Φ [rad]. The

Therefore, from equations (2) and (3)

It becomes.
From the equation (4), the in-plane distribution of the substrate is the evaporation coefficient: n (representing how much the evaporated substance evaporates from the evaporation source) and the geometrical arrangement of the substrate and the evaporation source (H: substrate height) It can be seen that P depends on the evaporation source eccentric distance.

  FIG. 4 shows the result of simulating the relationship between the substrate height: H and the in-plane film thickness distribution, assuming that the evaporation coefficient is 1.8 based on the above equation. From FIG. 4, it can be seen that when the height of the deposition substrate is about 550 mm and the evaporation source eccentric distance is 350 mm, the distribution in the substrate surface takes a good value of 0.01% or less. In the conventional apparatus, the evaporation source is arranged at a position where the distribution in the substrate surface is good based on the simulation result. However, the evaporation coefficient in the actual film formation process is the width of the electron beam incident on the evaporation material, It varies depending on the position and the height of the evaporating substance dissolving surface, and it is difficult to keep these conditions constant at all times. As a result, the distribution in the substrate surface is deteriorated, resulting in a large manufacturing problem that the yield is lowered.

  In the conventional vacuum film forming apparatus for NBPF, the present invention has the following mechanism to solve the problem caused because there is no correction mechanism for the film thickness distribution deterioration in the film forming substrate surface due to the change of the evaporation coefficient. It is a solution.

1. Evaporation source monitoring mechanism Electron beam irradiation position and irradiation width of the electron beam evaporation source, the position and shape of the evaporating substance dissolving part are constantly monitored, and correction is made if there is a deviation between the predetermined width, position and height I do.
2. In-plane film thickness distribution of at deposition substrate in a thickness distribution measurement mechanism deposition process is measured, if the deviation in the in-plane film thickness distribution of the substrate occurs, a correction.
3. Evaporation source position adjustment mechanism When a deviation occurs in the height of the evaporation substance dissolving surface and the film thickness distribution in the substrate surface, the evaporation source is moved to a position where an optimum film thickness distribution is obtained.
4). Crystal film thickness sensor angle adjustment mechanism The crystal film thickness sensor mounting angle is varied so that satisfactory evaporation speed can be monitored even if the evaporation source position moves.
By the means of the above four items, it is possible to dramatically improve the deterioration of the in-plane thickness cloth of the film formation substrate, which has been a problem in the past.

  Specifically, means for three-dimensionally detecting the electron beam irradiation position and irradiation width, the position and shape of the evaporated substance dissolving portion, means for measuring the in-plane film thickness distribution of the film formation substrate, and electron beam irradiation A means for controlling the position and irradiation width and a means for changing the position of the evaporation source with respect to the film-forming substrate, and controlling the electron beam so as to maintain the preset electron beam irradiation position and irradiation width; The evaporation source position is controlled so as to maintain the height of the evaporation substance dissolving surface, and the evaporation source position is varied to a position where the in-plane film thickness distribution of the film formation substrate is made uniform. .

  In the present invention, the in-plane film thickness distribution of the deposition substrate and the deposition substrate is constantly monitored during the deposition process and fed back to the evaporation source position and the electron beam irradiation conditions. It became possible to improve significantly.

Explanation of Configuration of Embodiment An embodiment of the present invention will be described with reference to FIG.
Components similar to those of the conventional apparatus shown in FIG.
The apparatus shown in the figure includes an evaporation source camera (37) and a computer (45) as an evaporation source monitoring mechanism, and an emission tube (14), an optical receiver (25) and a computer (46) as a film thickness distribution measuring mechanism. The evaporation source position adjusting mechanism (41) for changing the evaporation source position, the electron beam controller (47) for controlling the irradiation position and irradiation width of the electron beam for irradiating the evaporation substance, and the evaporation of the electron beam evaporation source (2) A crystal film thickness sensor (42) for monitoring the speed and an evaporation source control device (48) are provided.

The evaporation source camera (37) and computer (45), which are evaporation source monitoring mechanisms, constantly monitor the width and position of the electron beam incident on the evaporation substance, the shape and height of the evaporation substance dissolving surface during the film formation, 48), the electron beam irradiation position, irradiation width and evaporation source position are controlled.
The electron beam evaporation source (2) melts and evaporates the evaporated substance by irradiation with an electron beam. The evaporation source camera (37) optically observes the light emission part due to the melting of the evaporation substance, and outputs the luminance distribution to the computer (45). The luminance distribution is output three-dimensionally, and the computer (45) calculates the position and shape of the melted portion from the luminance distribution. Furthermore, the irradiation position and irradiation width of the electron beam are calculated by monitoring only the portion having a luminance of a certain value or more.
The optical observation means of the evaporation source camera (37) is not particularly limited as long as it has a light detection function, but a solid-state image sensor is used in this embodiment.

The emission tube (14) and the light receiver (25), which are film thickness distribution measuring mechanisms, are mounted on a stage (39, 40) that can be translated with respect to the surface of the film formation substrate (6). The light receiver (25) is connected to the computer (46) and outputs transmitted light or reflected light from the film formation substrate (6). The stage (39, 40) is disposed on the bottom surface of the vacuum chamber and the ceiling surface, respectively, and the emission tube (14) is disposed on the lower stage (39) disposed on the bottom surface of the vacuum chamber, and the upper stage is disposed on the ceiling surface of the vacuum chamber. (40) Install the receiver (25) on top. The upper and lower stages (39, 40) are operated so that the measurement light emitted from the emission tube (14) is always incident on the light receiver (15, 25). By moving the upper and lower stages (39, 40) and moving the irradiation position of the measurement light within the surface of the film formation substrate (6), the computer (46) determines the in-plane film thickness distribution of the film formation substrate (6). Calculate.
In the apparatus shown in FIG. 5, a reflecting mirror is provided on the optical path of the measurement light, and the measurement light is incident on each of the monochromatic photometry light receiver (15) and the spectral characteristic measurement light receiver (25). The spectral characteristic measurement light receiver (25) is used for the measurement of the film thickness distribution. However, the spectral characteristic measurement method and the monochromatic photometry method can be appropriately selected by providing the single-color photometry light receiver (15). For the measurement of the spectral characteristics, the method described in Japanese Patent Application No. 2003-126404, which is the invention of the present applicant, may be used.
In the apparatus shown in the figure, the output cylinder (14) and the light receiver (25) are mounted on the upper and lower stages (39, 40) to measure the transmittance, but the output cylinder and the light receiver are mounted on the same stage. The reflectance may be measured by mounting measurement light with a predetermined angle with respect to the film formation substrate. Even in the case of measuring the reflectance, the configuration for measuring the in-plane film thickness distribution of the substrate by moving the stage and moving the irradiation position of the measurement light on the film formation substrate surface remains the same.

The evaporation source position adjusting mechanism (41) that varies the evaporation source position is equipped with an electron beam evaporation source (2) on a stage that can move in the vertical and horizontal directions, and the electron beam evaporation is performed at a position where an optimum film thickness distribution can be obtained. The source (2) is moved. Due to the movement of the electron beam evaporation source (2), the vertical distance (the height of the substrate: H) between the film formation substrate (6) and the electron beam evaporation source (2) and the electron beam with respect to the rotation center of the film formation substrate (6). The eccentric distance (evaporation source eccentric distance: P) of the evaporation source (2) is changed to an arbitrary value within the setting range.
In this embodiment, the evaporation source moving mechanism shown in Japanese Patent Application No. 2003-195899, which is the previous invention of the applicant of the present application, is used. However, if the evaporation source position can be changed while maintaining a predetermined degree of vacuum, the Japanese Patent Application The configuration is not limited to that shown in 2003-195899.

The quartz film thickness sensor (42) utilizes the fact that the natural frequency of the quartz crystal changes due to its mass change. The evaporating substance is deposited on the quartz crystal to detect the natural frequency, and the frequency change is detected. The evaporation rate is detected by monitoring.
Its structure consists of a crystal unit with electrodes on both sides, an oscillation circuit that generates an intrinsic vibration in the crystal unit by applying an AC voltage to the electrodes of the crystal unit, and a frequency measurement mechanism that detects the natural oscillation frequency. And a calculation processing mechanism for calculating the evaporation rate of the evaporation source from the detected change in the natural frequency.
Here, the evaporation material evaporated from the electron beam evaporation source (2) has a distribution approximated to Cos ⁿ θ. If the angle of the crystal resonator plate surface with respect to the center of the electron beam evaporation source (2) is different, the mass of the evaporated substance deposited on the crystal resonator is different and the conditions change. It is necessary to keep the angle of the quartz oscillator plate surface constant during measurement.
The quartz film thickness sensor (42) includes an angle adjustment mechanism, and can change the angle in conjunction with the position change of the electron beam evaporation source (2) even if the position of the electron beam evaporation source (2) is changed. . The angle adjustment mechanism controls the crystal film thickness sensor (42) so that the angle of the crystal plate surface with respect to the electron beam evaporation source (2) is always constant. Specifically, even if the position of the electron beam evaporation source (2) is changed, the quartz film thickness sensor (42) may be always directed to the center of the electron beam evaporation source (2).

Next, the control device (48) of the electron beam evaporation source (2) will be described.
The control device (48) operates the electron beam controller (47) and the evaporation source position adjustment mechanism (41) based on the data input from the evaporation source monitoring mechanism and the film thickness measurement device, thereby irradiating the beam irradiation position and the electron beam. The irradiation width and the evaporation source position are changed.
The computer (45) of the evaporation source monitoring mechanism outputs the calculated electron beam irradiation width and irradiation position and the position and shape of the evaporated substance melting portion to the control device (48). When a deviation occurs between the electron beam irradiation width and position determined in advance, the control device (48) operates the electron beam controller (47) to correct the deviation. Further, when the height of the evaporating substance dissolving surface is deviated, the evaporating substance dissolving surface height is corrected by the evaporation source position adjusting mechanism (41). The correction is performed by adjusting the vertical distance (the height of the substrate: H) between the film formation substrate (6) and the electron beam evaporation source (2).
In the conventional apparatus, there has been a problem that the position and shape of the evaporating substance melting surface change during the film forming process. By controlling the melted portion with the control device (48), the evaporation coefficient during the film forming process can be extremely stabilized. Alternatively, the evaporation source position can be changed in accordance with the change of the evaporation coefficient, and the film thickness distribution in the film formation substrate surface can be kept good. By constantly monitoring the electron beam evaporation source (2) with the evaporation source camera (37) of the present invention and operating the electron beam irradiation conditions and evaporation source position with the control device (48), a desired film formation process is performed. The conditions can be obtained, and the in-plane film thickness distribution of the film formation substrate can be improved.

  Next, the computer (46) of the film thickness measurement device outputs the in-plane film thickness distribution of the film formation substrate (6) to the control device (48). When the substrate in-plane distribution is deviated, the control device (48) operates the evaporation source position adjusting mechanism (41) to change the position of the electron beam evaporation source (2) to correct the in-plane distribution of the substrate. I do. The correction is performed by the evaporation source position adjusting mechanism (41) with respect to the vertical distance (substrate height: H) between the film formation substrate (6) and the electron beam evaporation source (2) and the rotation center of the film formation substrate (6). This is done by adjusting the eccentric distance (evaporation source eccentric distance: P) of the electron beam evaporation source (2).

The control device (48) compares and calculates the data input from the computer (45) of the evaporation source monitoring mechanism and the computer (46) of the film thickness measuring device with a preset value, and calculates the input value and the set value. The electron beam controller (47) and the evaporation source position adjusting mechanism (41) are operated according to the difference.
By controlling the film thickness by feeding back the in-plane film thickness distribution of the substrate to the evaporation source position in the present invention, it is possible to obtain a highly accurate film thickness distribution.

Description of Action and Operation of Embodiments Based on the above- described embodiment, the position of the electron beam evaporation source is varied, and each of the high and low refractive index evaporation materials (high: H [Ta ₂ O ₅ ], low: L [SiO ₂ ]) Was measured for the in-plane film thickness distribution during single layer deposition. The film forming conditions are shown in Table 1, and the results are shown in FIGS. A spectroscopic ellipsometer was used to measure the film thickness and refractive index. In the figure, the abscissa indicates the evaporation source eccentric distance (P), and the ordinate indicates the film thickness distribution and the refractive index distribution.

FIG. 6 shows a film thickness distribution when Ta ₂ O ₅ , which is a high refractive index substance, is formed, and FIG. 7 shows a refractive index distribution.
6 and 7, both the film thickness and the refractive index distribution have good results of 0.5% or less between the evaporation source eccentric distance: 350 to 430 mm, and in particular, the distribution near the evaporation source eccentric distance: 430 mm is the most distributed. Seems to be improving. The difference due to the difference in height between the evaporation source and the substrate is hardly recognized in view of measurement errors.
FIG. 8 shows the film thickness distribution when SiO ₂ , which is a low refractive index material, is formed, and FIG. 9 shows the refractive index distribution.
8 and 9, it can be seen that the best distribution is obtained when the eccentric distance is 430 mm, and the best distribution is obtained when the height between the evaporation source and the substrate is 650 mm.

Next, based on the above results, the evaporation source was arranged at a position where the evaporation source eccentric distance was 430 mm and the height between the evaporation source and the substrate was 650 mm, and NBPF was formed using the apparatus of the present invention. The film configuration and the substrate ^{/ [HL] 7 H8LH [LH} ] 7 L [HL] 7 H8LH [LH] 7 / and 63 layers of the atmosphere (the optical thickness of each layer lambda / 4, the respective H, and L ).
FIG. 10 shows the result of the center wavelength distribution, and FIG. 11 shows the conventional center wavelength distribution for comparison. While the conventional center wavelength distribution is ± 2.1 nm within Φ54, in this example, an extremely good result of ± 0.2 nm within Φ60, which is 1/10 or less, was obtained.

In the above embodiment, the vacuum film forming apparatus for NBPF has been described. However, the present invention is not limited to the NBPF, and can be diverted to other vacuum film forming apparatuses.
Further, although the electron beam evaporation source is used in the above embodiment, other evaporation sources can be used.

NBPF membrane configuration illustration Explanatory drawing of conventional device configuration Illustration of film thickness distribution simulation Simulation results of film thickness distribution Explanatory drawing of the device configuration of the present invention Film thickness distribution during Ta ₂ O ₅ single layer deposition Refractive index distribution during Ta ₂ O ₅ single layer deposition Film thickness distribution during SiO ₂ single layer deposition Refractive index distribution during SiO ₂ single layer deposition Distribution data in the center wavelength within the substrate surface when the apparatus of the present invention is used Distribution data in the center wavelength within the substrate surface when using a conventional device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Electron beam evaporation source 3 Shutter 4 Quartz film thickness sensor 5 Substrate dome 6 Deposition substrate 7 Substrate heating sheath heater 8 Lower viewing window 9 Upper viewing window 10 Controller 11 Wavelength variable laser 12 Depolarizer 13 Optical fiber 14 Outgoing Tube 15 Monochromatic photometer 16 Viewing window 17 Radiation type thermometer 18 Temperature regulator 19 Halogen heater power regulator 20 Low voltage introduction electrode 21 Halogen heater 22 High frequency power supply 23 Matching box 24 High voltage introduction electrode 25 Light receiver for spectral characteristic measurement 26 Translucent mirror 27 Optical power meter 28 Personal computer 29 Ambient light cut filter 30 Substrate 31 High refractive index material
32 Low refractive index material 33 Reflective band layer 34 Spacer layer 35 Coupling layer 36 Cavity 37 Evaporation source monitoring camera 38 Evaporation source monitoring camera mounting flange
39 Lower stage 40 Upper stage 41 Evaporation source position adjustment mechanism 42 Angle variable crystal film thickness sensor 43 Translucent mirror box 44 High-speed rotation mechanism 45 Computer 46 Computer 47 Electron beam controller 48 Control device

Claims (18)

  In an optical thin film forming apparatus that irradiates an evaporating substance with an electron beam and deposits the evaporating substance on a rotating film forming substrate, the irradiation position and irradiation width of the electron beam irradiating the evaporating substance and the evaporating substance melting portion An optical system characterized in that the position and shape are constantly observed, and the observed data is output to a control device, and the control device performs correction when a deviation occurs between a preset position, width, and shape. Thin film forming equipment.   In an optical thin film forming apparatus for irradiating an evaporating substance with an electron beam and depositing the evaporating substance on a rotating film forming substrate, the film thickness measuring device measured the in-plane film thickness distribution of the film forming substrate. An apparatus for forming an optical thin film, which outputs distribution data to a control device, and the control device corrects an in-plane film thickness distribution of a substrate by changing a position of an evaporation source. In an optical thin film forming apparatus for irradiating an evaporating substance with an electron beam and depositing the evaporating substance on a rotating film forming substrate,
An evaporation source monitoring mechanism for constantly monitoring the irradiation position and irradiation width of the electron beam and the position and shape of the evaporating substance dissolving portion;
A film thickness measuring device for measuring an in-plane film thickness distribution of the film formation substrate;
An evaporation source position adjusting mechanism for changing an evaporation source position with respect to the film formation substrate;
An electron beam controller for controlling the irradiation position and irradiation width of the electron beam, the evaporation source position adjusting mechanism, and a controller for the electron beam controller;
The control device operates the electron beam controller and the evaporation source position adjusting mechanism based on the data output from the evaporation source monitoring mechanism and the film thickness measuring device, and the in-plane film thickness of the deposition substrate. An apparatus for forming an optical thin film characterized by correcting the distribution.   The evaporation source monitoring mechanism uses an optical detector to detect a light emitting portion of the evaporation substance and output a luminance distribution of the evaporation substance, an electron beam irradiation position and an irradiation width from the luminance distribution, and 4. The apparatus for forming an optical thin film according to claim 3, comprising a computer for calculating a position and a shape of the evaporating substance dissolving portion.   5. The evaporation source monitoring mechanism according to claim 4, wherein the evaporation source monitoring mechanism observes the electron beam irradiation position and irradiation width by detecting only a portion having a luminance equal to or higher than a set value.   The film thickness measurement apparatus is mounted on a stage that can move in parallel with the film formation substrate surface, and moves the irradiation position of the measurement light within the film formation substrate surface by moving the stage. 4. The optical thin film forming apparatus according to claim 2, wherein an in-plane film thickness distribution of the film formation substrate is measured.   The stage is installed on the bottom surface of the vacuum chamber and the ceiling surface, the emission tube is mounted on the stage disposed on the bottom surface of the vacuum chamber, and the light receiver is mounted on the stage disposed on the ceiling surface of the vacuum chamber. Item 7. The optical thin film forming apparatus according to Item 6.   The evaporation source position adjusting mechanism drives the evaporation source position while keeping the inside of the vacuum chamber airtight, the vertical distance between the deposition substrate and the evaporation source, and the evaporation source relative to the rotation center of the deposition substrate. 4. The apparatus for forming an optical thin film according to claim 3, wherein the eccentric distance is variable.   The control device inputs the electron beam irradiation position and irradiation width data output from the evaporation source monitoring mechanism, compares and calculates a preset electron beam irradiation position and irradiation width value and an input value, 4. The apparatus for forming an optical thin film according to claim 3, wherein the electron beam controller is operated based on the comparison / calculation result to maintain the electron beam irradiation position and irradiation width at set values.   The control device inputs the height of the evaporative substance dissolution surface output from the evaporation source monitoring mechanism, compares and calculates the preset evaporative substance dissolution surface height and the input value, and outputs the comparison and operation result. 4. The apparatus for forming an optical thin film according to claim 3, wherein the evaporation source adjusting mechanism is operated to drive the position of the evaporation source in the vertical direction to maintain the set height.   The control device inputs in-plane film thickness distribution data output from the film thickness measurement device, and operates the evaporation source adjustment mechanism at a position to make the in-plane film thickness distribution of the film-forming substrate uniform. The evaporation source position is driven to adjust the vertical distance between the deposition substrate and the evaporation source and the eccentric distance of the evaporation source with respect to the rotation center of the deposition substrate. The apparatus for forming an optical thin film as described.   The optical thin film forming apparatus includes a crystal film thickness sensor that is driven in conjunction with driving of the evaporation source position by the evaporation source position adjusting mechanism, and the crystal film thickness sensor is always constant in position and angle with respect to the evaporation source. The apparatus for forming an optical thin film according to any one of claims 1 to 3.   13. The optical system according to claim 12, wherein the quartz film thickness sensor includes an angle adjusting mechanism, and changes the angle in conjunction with the movement of the evaporation source position so as to always face the center of the evaporation source. Thin film forming equipment. A control system for an optical thin film forming apparatus that irradiates an evaporating substance with an electron beam and deposits the evaporating substance on a rotating film-forming substrate,
Means for three-dimensionally detecting an electron beam irradiation position and irradiation width, and a shape and position of the evaporating substance dissolving surface;
A control device for inputting the detected data;
Means for varying the irradiation position and irradiation width of the electron beam;
And means for varying the evaporation source position with respect to the film formation substrate,
The control device
Compare and calculate the input data and preset electron beam irradiation position and irradiation width,
Control the electron beam based on the comparison and calculation results, keep the electron beam irradiation position and irradiation width as set values,
Compare and calculate the input data and preset height of the evaporating substance dissolution surface,
A control system characterized in that the evaporation source position is controlled based on a comparison / calculation result, and the height of the evaporation substance dissolving surface is maintained at a set value. A control system for an optical thin film forming apparatus that irradiates an evaporating substance with an electron beam and deposits the evaporating substance on a rotating film-forming substrate,
Means for measuring an in-plane film thickness distribution of the deposition substrate;
A control device for inputting the measured data;
Comprising means for varying the evaporation source position with respect to the film formation substrate,
The control device
Compare and calculate the input data and the preset in-plane film thickness distribution of the deposition substrate,
A control system for controlling an evaporation source position so as to make the in-plane film thickness distribution of a film formation substrate uniform.   In the film formation process of optical thin film formation, the irradiation position and irradiation width of the electron beam irradiating the evaporating substance and the position and shape of the evaporating substance melting portion are constantly monitored, and the predetermined position, width and shape are determined. A method of forming an optical thin film characterized by correcting an electron beam irradiation condition and an evaporation source position when a deviation occurs between them.   In the film formation process of the optical thin film formation, the in-plane film thickness distribution of the film-forming substrate is measured, the position of the electron beam evaporation source is varied from the obtained distribution data, and the in-plane film thickness distribution of the substrate is corrected. A method for forming an optical thin film, comprising: In an optical thin film forming method of irradiating an evaporating substance with an electron beam and depositing the evaporating substance on a rotating film forming substrate,
Means for three-dimensionally detecting the electron beam irradiation position and irradiation width, and the position and shape of the evaporating substance dissolving portion;
Means for measuring an in-plane film thickness distribution of the deposition substrate;
Means for controlling the irradiation position and irradiation width of the electron beam;
Means for varying the evaporation source position with respect to the film formation substrate,
Controlling the electron beam to maintain the electron beam irradiation position and irradiation width set in advance,
Controlling the evaporation source position so as to keep the height of the evaporating substance dissolving surface set in advance;
A method of forming an optical thin film, characterized in that the source position is varied to a position where the in-plane film thickness distribution of the film forming substrate is made uniform.

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