201103998 六、發明說明： 【發明所屬之技術領域】 本發明係有關形成真空蒸鍍膜的方法及其裝置，特別 是有關對於大型的基板上形成厚度均一之薄膜最佳的真空 蒸鍍方法及其裝置。 【先前技術】 • 使用於有機電激發光顯示裝置或照明裝置之有機電激 發光元件乃從上下，由陽極與陰極之一對電極，夾入由有 機材料所成之有機層的構造，成爲經由施加電壓至電極之 時’各從陽極側植入電洞，從陰極側植入電子至有機層， 並經由此等再結合而產生發光的構造。 其有機層係成爲層積含有電洞植入層、電洞輸送層、 發光層、電子輸送層、電子植入層的多層膜之構造。作爲 形成其有機層之材料，有著採用高分子材料與低分子材料 ©者。其中對於採用低分子材料之情況，係採用真空蒸鍍裝 置而形成有機薄膜。 有機電激發光裝置之特性係受到有機層之膜厚的影響 爲大。另一方面，形成有機薄膜的基板係逐年大型化。隨 之’採用真空蒸鍍裝置之情況，有必要高精確度地控制形 成於大型基板上的有機薄膜的厚度》 作爲以真空蒸鍍形成薄膜於大型基板的構成，對於專 利文獻1 (日本特開2004-95 275號公報）係揭示有具備線 型之蒸鍍源的真空蒸鍍裝置。對於專利文獻2 (日本特開 -5- 201103998 2002-343 563號公報）係揭示有將大型基板保持爲垂直， 使用具備複數之坩鍋的蒸鍍源，形成薄膜於基板上之真空 蒸鍍裝置。另外，對於專利文獻3 (日本特開2004-225058 號公報）係揭示有於蒸鍍源移動引導部，設置複數之蒸鍍 源，可將其複數之蒸鍍源沿著蒸鍍源移動引導部移動之構 成。 【發明內容】 對於專利文獻1係記載有在設置排列成線狀之複數的 噴嘴之蒸鍍源上，使玻璃基板移動於與噴嘴排列方向直角 方向，於玻璃基板上形成有機薄膜之構成，以非均等間距 配設蒸鍍源之複數噴嘴，迴避對於蒸鍍源之長度方向之膜 厚產生不均之情況。但對於複數之各噴嘴，並未考慮到檢 測出經由蒸鍍材料之析出的堵塞狀態。 對於專利文獻2係記載有經由以保持具保持大型化之 基板的背面全體之時，以未彎曲基板而保持之狀態，從具 備複數坩鍋之蒸鍍源，蒸發材料而於基板上形成薄膜者。 但，對於爲了均一化形成於基板上之薄膜的手段，並未揭 示。 對於專利文獻3係記載有依據以膜厚監視器檢測出的 膜厚，檢測蒸鍍速度，預測經由此所蒸鍍之膜厚，於基板 上形成薄膜的成膜裝置。但，對於爲了均一化形成於基板 上之薄膜的手段，並未揭示。 本發明之目的係解決上述之以往技術的課題，提供‘· -6- 201103998 使用設置排列成線狀之複數的噴嘴之蒸鍍源，可以均一的 膜厚形成有機薄膜於大形化之基板的真空蒸鍍方法及其裝 置。 爲了達成上述目的，在本發明中， 由在真空排氣之處理室內，將基板保持在蒸鍍經由加 熱於基板所氣化之蒸鍍材料之蒸鏟裝置的基板保持手段， 和氣化蒸鍍材料，於從噴嘴放出之一方向，具有長形狀之 蒸鍍源’和將保持蒸鍍源或基板於與蒸鏟源長的一方向垂 直之方向之基板保持手段之至少一方移動的第1移動手段 ，和檢測來自蒸鍍源的蒸鏟材料之放出速率的檢測手段， 和將蒸鍍源或檢測手段之至少一方，與蒸鍍源長的一方向 平行地移動之第2移動手段，和控制基板保持手段與蒸鏟 源與第1移動手段與檢測手段與第2移動手段之控制手段而 構成，呈作爲經由以控制手段而控制第2移動手段，移動 檢測手段或蒸鍍源之至少一方者，計測蒸鍍源之放出速率 之長度方向的分佈。 另外，爲了達成上述目的，在本發明中，在蒸鍍裝置 之真空槽內，具備複數於以遮蔽罩被覆表面之被處理基板 的表面，經由蒸鍍形成薄膜之真空蒸鍍部，將具有在維持 成真空的環境，在複數之真空蒸鏟部間收授被處理基板之 被處理基板收授部的真空蒸鍍裝置，在複數之真空蒸鍍部 之中至少一個真空蒸鍍部係由藉由配置於線上之複數的噴 嘴，放出經由加熱而氣化之前述蒸鍍材料於真空槽內之蒸 鍍源，和在以遮蔽罩被覆處理基板之狀態而保持之基板保 201103998 持手段，和對於沿著由基板保持手段所保持之被處理基板 ，將蒸鑛源配置於線上之複數的噴嘴配列方向而言，掃描 於垂直方向之蒸鍍源驅動手段，和在蒸鍍源所具有之噴嘴 ，將1個或鄰接的複數之噴嘴作爲組群，監視從各噴嘴之 組群所放出之蒸鍍材料之個別放出狀態的監視手段而構成 〇 另外，爲了達成上述目的，在本發明中，作爲對於蒸 鍍裝置而言，於真空槽，設置複數之真空蒸鍍部，真空蒸 鍍部係排列於蒸鍍源之長度方向，蒸鍍源係依序移動於蒸 鍍源之長度方向，設置位置決定在對應於設置於各真空蒸 鍍部之基板保持部的位置之位置決定手段，將位置決定在 對應於基板保持部之位置的蒸鍍源，做成於與蒸鏟源之長 度方向垂直方向，掃描蒸鍍源，實施成膜於基板保持部之 基板，設置掃描成膜手段，於真空蒸鑛部，從基板保持部 去除成膜處理完成基板，更換未處理基板，設置進行位置 決定之基板更換手段者，於掃描成膜中進行前述基板之更 換者’設置氣化於真空蒸鍍部間之蒸鍍源的移動路徑上的 前述蒸鍍材料之放出量的監視手段。 更且’爲了達成上述目的，在本發明中，作爲在連接 於將內部進行排氣而維持成真空狀態之真空槽的第1真空 蒸鍍部’經由蒸鍍形成薄膜於以遮蔽罩被.覆表面之被處理 基板的表面，將形成薄膜之基板，在維持成真空的環境， 從第1真空蒸鍍部交付至第2真空蒸鍍部，在第2真空蒸鍍 部進行處理之真空蒸鍍方法中，在第1真空蒸鍍部，在以 -8- 201103998 遮蔽罩被覆處理基板的狀態，經由藉由配置於蒸鍍源之線 上的複數之噴嘴，放出蒸鍍材料於真空槽內之同時，對於 將蒸鍍源沿著被處理基板配置於線上之複數的噴嘴之配列 方向而言’掃描於垂直之方向之時，藉由遮蔽罩而形成蒸 鍍膜於被處理基板，於形成蒸鍍膜於其被處理基板時，由 第1監視手段監視從蒸鍍源所放出之蒸鍍材料的放出狀態 〇 • 如根據本發明，可監視設置排列成線狀之複數的噴嘴 之蒸鍍源的各噴嘴，放出有機電激發光材料氣體之狀態， 可將有機薄膜安定而均一膜厚地形成於大型化之基板。 此等發明之特點和優勢，將從下面的更具體的描述作 爲發明首選方式，如附加之圖示所示。 【實施方式】 作爲有關本發明之真空蒸鍍裝置之一例，說明適用於 胃機電激發光裝置之製造的例。有機電激發光裝置之製造 裝置係於陽極上，將電洞植入層或電洞輸送層、發光層（ 有機膜層），於陰極下，將電子植入層或輸送層等之各種 材料的薄膜層，經由真空蒸鍍而加以多層層積而形成之裝 ® °有關本發明之有機電激發光裝置製造裝置係具備：於 蒸鍍部，藉由配置於線上之複數的噴嘴而蒸發材料之 胃鍍源，和監視對於該蒸鍍源之各噴嘴的處理室內部之前 $材料氣體的放出狀態之監視手段爲特徵。 以下，使用圖示而說明本發明之實施例。 -9 - 201103998 [實施例1] 圖1乃顯示有關實施例1之有機電激發光裝置製造裝置 構成之一例。在本實施形態之有機電激發光裝置製造裝置 100係大致具備運入處理對象之基板6的承載群組3、處理 前述基板6之4個處理群組（A~D )、設置於鄰接之各處理 群組A~D間或處理群組A與承載群組3或接下工程（密封工 程）之間的5個收授室4a〜e而加以構成。 承載群組3係具備：爲了於前後維持真空而具有閘閥 1 〇之負載室3 1，和從負載室3 1接受基板6，旋轉將基板6運 入於收授室4a之運送機械手臂5R。各負載室31及各收授室 4係於前後具有閘閥1 0，控制該具有閘閥1 0之開關而維持 真空的同時（爲了維持真空的手段，例如真空排氣幫浦的 圖係省略），將基板交付至承載群組3或接下之組群等。 各群組（A〜D )係具有：具備運送機械手臂5a〜d之運 送室2a〜d ’和從運送機械手臂5a〜d接受基板，在進行特定 處理之圖面上，配置於上下之2個處理室la〜d，u或d (第1 添加字a〜d係顯示群組，第2添加字u、d係顯示上側下側 )。對於各運送室2a〜d與各處理室la〜d，u或d之間，係設 置有各鬧閥1 0 * 圖2係顯示依據第1實施例之運送室2與處理室1之內部 構成的槪要》處理室i之構成係根據處理內容而有所差異 ’但以蒸鍵發光材料而進行電激發光層之真空蒸鍍的處理 室1bU爲例進行說明。設置於運送室2b之內部的運送機械 201103998 手臂5b係具有可左右旋轉構造之機械臂51，對於其前端係 安裝有基板運送用之梳狀手部52。 另一方面’處理室lbu係如圖4(a)及（b)所示，大 致具備蒸發發光材料而蒸鍍於基板6之蒸鍍源部71，和將 其蒸鍍源部7 1 ’沿著經由基板保持手段8 2而保持成垂直之 基板6，與基板6平行地驅動於上下方向之上下驅動部72， 和蒸鍍發光材料至基板6之必要的部份之遮蔽罩81，和將 # 基板6’在與運送機械手臂5b之間進行收授之梳狀手部94 ’和旋轉由梳狀手部94接收到之基板6而使其直立，移動 至基板保持手段82之基板旋轉手段93。並且，對於在實施 真空蒸鍍時，經由未圖示之真空排氣幫浦，處理室lbu的 內部係維持成10— 3〜10— 4P a程度之高真空狀態。 然而，在圖2中雖省略，但運送室2b與處理室lbu係由 可開關之閘閥1 〇所隔開，運送室2b與處理室1 bu之間的基 板6收授係在排氣成真空中加以進行。201103998 6. Technical Field of the Invention The present invention relates to a method and apparatus for forming a vacuum evaporation film, and more particularly to a vacuum evaporation method and apparatus for forming a film having a uniform thickness on a large substrate. . [Prior Art] The organic electroluminescence element used in the organic electroluminescence display device or the illumination device has a structure in which an organic layer made of an organic material is sandwiched between the anode and the cathode, and the organic layer is formed by an organic material. When a voltage is applied to the electrodes, each of the holes is implanted from the anode side, electrons are implanted from the cathode side to the organic layer, and recombination is performed to generate a light-emitting structure. The organic layer is a structure in which a multilayer film including a hole implant layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron-implanted layer is laminated. As a material for forming an organic layer, a polymer material and a low molecular material are used. In the case where a low molecular material is used, an organic thin film is formed by a vacuum evaporation apparatus. The characteristics of the organic electroluminescence device are greatly affected by the film thickness of the organic layer. On the other hand, the substrate on which the organic thin film is formed is increased in size year by year. In the case of the vacuum evaporation apparatus, it is necessary to control the thickness of the organic thin film formed on the large substrate with high precision. As a configuration for forming a thin film on a large substrate by vacuum evaporation, Patent Document 1 (Japanese Patent Laid-Open) Japanese Laid-Open Patent Publication No. 2004-95 No. 275 discloses a vacuum vapor deposition apparatus having a linear vapor deposition source. Patent Document 2 (JP-A-5-201103998, 2002-343, 563) discloses a vacuum vapor deposition apparatus in which a large-sized substrate is held vertically, and a vapor deposition source having a plurality of crucibles is used to form a film on a substrate. . Further, the patent document 3 (JP-A-2004-225058) discloses a vapor deposition source moving guide, and a plurality of vapor deposition sources are provided, and a plurality of vapor deposition sources can be moved along the vapor deposition source. The composition of movement. SUMMARY OF THE INVENTION Patent Document 1 discloses a configuration in which an organic thin film is formed on a glass substrate by moving a glass substrate in a direction perpendicular to the nozzle array direction in a vapor deposition source in which a plurality of nozzles arranged in a line are arranged. The plurality of nozzles of the vapor deposition source are disposed at an uneven pitch to avoid unevenness in the film thickness in the longitudinal direction of the vapor deposition source. However, for each of the plurality of nozzles, the clogging state in which the deposition by the vapor deposition material was detected was not considered. In the case of the entire back surface of the substrate which is kept large by the holder, the film is held in an unbent substrate, and the material is evaporated from the vapor deposition source of the plurality of crucibles to form a film on the substrate. . However, the means for homogenizing the film formed on the substrate are not disclosed. Patent Document 3 describes a film forming apparatus that forms a film on a substrate by detecting the film thickness measured by the film thickness monitor, detecting the vapor deposition rate, and predicting the film thickness by the vapor deposition. However, the means for homogenizing the thin film formed on the substrate has not been disclosed. An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a vapor deposition source of a plurality of nozzles arranged in a line shape, which can form an organic thin film on a large-sized substrate in a uniform film thickness of '· -6-201103998 Vacuum evaporation method and device thereof. In order to achieve the above object, in the present invention, a substrate holding means for holding a substrate in a vacuum evacuation processing chamber while vapor-depositing a vapor deposition device heated by vaporization on a substrate, and a vaporization evaporation material are provided. a first moving means for moving at least one of a vapor deposition source having a long shape and a substrate holding means for maintaining a vapor deposition source or a substrate in a direction perpendicular to a direction of the source of the shovel source in one direction from the nozzle discharge And a detecting means for detecting a discharge rate of the steaming material from the vapor deposition source, and a second moving means for moving at least one of the vapor deposition source or the detecting means in parallel with a direction in which the vapor deposition source is long, and the control substrate The holding means and the source of the steaming shovel, the first moving means and the detecting means, and the control means of the second moving means are configured to control at least one of the second moving means, the movement detecting means, and the vapor deposition source by the control means. The distribution of the discharge rate of the vapor deposition source in the longitudinal direction is measured. Further, in order to achieve the above object, in the vacuum chamber of the vapor deposition device, a vacuum vapor deposition portion that forms a film on the surface of the substrate to be coated with the mask cover is formed in a vacuum chamber of the vapor deposition device, and a vacuum vapor deposition portion that forms a film by vapor deposition is provided. In a vacuum-maintaining environment, a vacuum vapor deposition apparatus for receiving a substrate to be processed of a substrate to be processed is provided between a plurality of vacuum steaming shovel portions, and at least one vacuum vapor deposition portion of the plurality of vacuum vapor deposition portions is borrowed a vapor deposition source in which a vapor deposition material vaporized by heating is discharged in a vacuum chamber by a plurality of nozzles disposed on a line, and a substrate protection method held in a state in which the substrate is covered with a mask, and The vapor deposition source driving means for scanning the vertical direction and the nozzle of the vapor deposition source, along the plurality of nozzle arrangement directions in which the vapor source is disposed on the substrate to be processed by the substrate holding means One or a plurality of adjacent nozzles are used as a group, and monitoring means for monitoring the individual discharge state of the vapor deposition material discharged from the group of nozzles is monitored. In order to achieve the above object, in the present invention, as the vapor deposition device, a plurality of vacuum vapor deposition portions are provided in the vacuum chamber, and the vacuum vapor deposition portions are arranged in the longitudinal direction of the vapor deposition source, and the vapor deposition source is The order is moved in the longitudinal direction of the vapor deposition source, and the position is determined in accordance with the position determining means corresponding to the position of the substrate holding portion provided in each vacuum vapor deposition portion, and the position is determined in the vapor deposition source corresponding to the position of the substrate holding portion. The vapor deposition source is scanned in a direction perpendicular to the longitudinal direction of the shovel source, and a substrate formed on the substrate holding portion is formed, and a scanning film forming means is provided, and the film forming process is removed from the substrate holding portion in the vacuum smelting portion. In the case of replacing the unprocessed substrate and providing the substrate replacement means for determining the position, the replacement of the substrate is performed in the scanning film formation, and the vapor deposition material on the moving path of the vapor deposition source vaporized between the vacuum deposition portions is provided. The means of monitoring the amount of release. Further, in order to achieve the above object, in the present invention, a film is formed by vapor deposition on a first vacuum vapor deposition portion that is connected to a vacuum chamber that is evacuated and maintained in a vacuum state, and is covered with a mask. The surface of the substrate to be processed on the surface, and the substrate on which the thin film is formed is delivered to the second vacuum vapor deposition unit from the first vacuum deposition unit in a vacuum-maintaining environment, and vacuum evaporation is performed in the second vacuum deposition unit. In the first vacuum deposition unit, the substrate is coated with the mask from -8 to 201103998, and the vapor deposition material is discharged into the vacuum chamber through a plurality of nozzles disposed on the vapor deposition source line. When the scanning direction of the plurality of nozzles on which the vapor deposition source is disposed on the substrate is "scanned in the vertical direction", the vapor deposition film is formed on the substrate to be processed by the mask to form a vapor deposition film. When the substrate to be processed is used, the first monitoring means monitors the discharge state of the vapor deposition material discharged from the vapor deposition source. According to the present invention, it is possible to monitor the vapor deposition of a plurality of nozzles arranged in a line shape. Each nozzle, a state of light emission organic electroluminescent material gases may be stable and uniformly a film thickness of the organic thin film formed on the substrate size. The features and advantages of these inventions will be apparent from the following more detailed description of the invention as illustrated in the accompanying drawings. [Embodiment] An example of a vacuum vapor deposition device according to the present invention will be described as an example of application to the manufacture of a gastric electroluminescence device. The manufacturing device of the organic electroluminescence device is attached to the anode, and the hole is implanted into the layer or the hole transport layer, the light-emitting layer (organic film layer), and under the cathode, various materials such as an electron-implanted layer or a transport layer are used. The apparatus for manufacturing an organic electroluminescent device according to the present invention is characterized in that the thin film layer is formed by laminating a plurality of layers by vacuum deposition, and the material is evaporated by a plurality of nozzles arranged on the wire in the vapor deposition portion. The gastric plating source and the monitoring means for monitoring the release state of the material gas before the processing chamber inside each nozzle of the vapor deposition source are characterized. Hereinafter, embodiments of the present invention will be described using the drawings. -9 - 201103998 [Embodiment 1] Fig. 1 is a view showing an example of a configuration of an apparatus for manufacturing an organic electroluminescence device according to a first embodiment. In the organic electroluminescent device manufacturing apparatus 100 of the present embodiment, the load group 3 of the substrate 6 to be processed and the four processing groups (A to D) for processing the substrate 6 are provided, and are disposed adjacent to each other. The five reception rooms 4a to e between the groups A to D or the processing group A and the carrier group 3 or the next project (sealing project) are configured. The carrier group 3 includes a load chamber 3 1 having a gate valve 1 维持 for maintaining a vacuum before and after, and a substrate 6 received from the load chamber 31, and rotating the substrate 6 into the transport robot 5R of the reception room 4a. Each of the load chambers 31 and the receiving chambers 4 has a gate valve 10 in front and rear, and controls the switch having the gate valve 10 to maintain a vacuum (for the purpose of maintaining a vacuum, for example, the vacuum exhaust pump is omitted). The substrate is delivered to the carrier group 3 or the next group or the like. Each of the groups (A to D) has a transport chamber 2a to d' having transport robots 5a to 5d and a substrate received from the transport robots 5a to 5d, and is placed on the upper and lower sides of the screen for performing specific processing. The processing chambers la to d, u or d (the first added words a to d are display groups, and the second added words u and d are displayed on the lower side). Each of the transport chambers 2a to 2d and each of the processing chambers la to d, u or d is provided with each of the alarm valves 10. Fig. 2 shows the internal configuration of the transport chamber 2 and the processing chamber 1 according to the first embodiment. The configuration of the processing chamber i is different depending on the processing content. However, the processing chamber 1bU that performs vacuum vapor deposition of the electroluminescence layer by the vapor-bonding luminescent material will be described as an example. The transporting machine provided in the inside of the transport chamber 2b 201103998 The arm 5b has a mechanical arm 51 having a horizontally rotatable structure, and a comb-shaped hand 52 for transporting the substrate is attached to the front end. On the other hand, as shown in FIGS. 4(a) and 4(b), the processing chamber lbu is provided with a vapor deposition source portion 71 which is vapor-deposited on the substrate 6 and has a vapor deposition source portion 7 1 ' a substrate 6 that is held vertically by the substrate holding means 8 2, a lower driving unit 72 that drives the upper and lower directions in parallel with the substrate 6, and a mask 81 that evaporates the luminescent material to a necessary portion of the substrate 6, and #板6' is a comb-shaped hand portion 94' that is received between the transport robot arm 5b and a substrate rotating means that rotates the substrate 6 received by the comb-shaped hand portion 94 to be erected and moved to the substrate holding means 82 93. Further, when vacuum vapor deposition is performed, the inside of the processing chamber 1bu is maintained at a high vacuum of about 10 - 3 to 10 - 4 Pa by a vacuum exhaust pump (not shown). However, although omitted in FIG. 2, the transfer chamber 2b and the processing chamber lbu are separated by a switchable gate valve 1 ,, and the substrate 6 between the transfer chamber 2b and the processing chamber 1 bu is received in a vacuum. In progress.
® 於圖3顯示遮蔽罩81之構成。遮蔽罩81係具備罩體81M '框體8 1 F而加以構成。由未圖示之校準標記檢測手段， 檢測形成於基板上之校準標記8 4的位置與遮蔽罩8 1的窗8 5 之位置，以固定於基板保持手段82之校準驅動部83，將形 成於罩體81M的窗85 (參照圖2)，位置調整至形成於基板 6上之校準標記84。 圖4係說明蒸鍍源部71與經由基板保持手段82而保持 成垂直之基板6及遮蔽罩8 1的關係圖。第4圖（b)係在第4 圖（a)中，從箭頭B的方向而視的圖。 -11 - 201103998 上下驅動手段72係將蒸鍍源部71，沿著一對之導軸76 而移動至上下方向者，具備：設置於大氣側之驅動馬達 72M、經由同驅動馬達72M而加以旋轉驅動，真空密封於 設置於處理室lbu的壁面lbuw之密封部72S的旋轉部72C、 固定於旋轉部72C，與旋轉部72C同步旋轉之滾動螺旋72P 、固定於蒸鍍源部71，經由滾動螺旋72P之旋轉而使蒸鍍 源部71進行上下之螺帽72K，及在前述上下時，引導蒸鍍 源部71之一對的導軸76上行之引導件72G。一對的導軸76 係將一端由處理室lbu的壁面lbuw，而將另一·端由支持板 7 8加以支持。 蒸鍍源部71係具有n個之蒸鍍源71a〜n (個數η係對應 於基板6之寬度方向尺寸而決定，η亦含有1的情況），各 蒸鍍源7 1 a〜η係具有於內部收納蒸鍍材料7 1 ζ，從外部加熱 其收納之蒸鍍材料7 1 Ζ的加熱器7 1 Η、檢測蒸發溫度之溫度 感測器7 1 S ’控制裝置50係呈監視由溫度感測器7 1 S檢測蒸 發溫度之輸出而得到特定之蒸鍍速度地，控制加熱器7 1 Η 。除以溫度控制蒸發速度以外，亦可依據由膜厚監視器20 所檢測之氣化的蒸鍍材料7 1 Ζ之放出量的値，直接控制加 熱器71Η之輸出。如圖2之導引圖所示，對於蒸鍍源部71係 線狀地排列有對應於各蒸鍍源71 a〜n之噴嘴73 a~n，將加熱 而氣化之蒸鍍材料71Z，從其噴嘴73a〜η放出至處理室lbu 的內部，於與蒸鍍源部71對向而保持成垂直之基板6的表 鍍於 蒸對 昇。 提者 了 鑛 爲蒸 , 其 要使 必而 據料 根材 ο 劑 鍵雜 蒸摻 其熱 使加 而時 81同 罩可 蔽亦 遮而 由性 藉特 ’ 之 面膜 -12- 201103998 此情況，將複數之蒸鍍源，對於各蒸鍍源71a〜η而言，如 作成平行地排列構成即可。 真空內配線•配管機構40係具有由一端乃於處理室 lbu的壁面lbuw可旋轉，且在做成開放於大氣環境之狀態 加以固定之中空的第1鏈環41，一端乃可旋轉地連接於前 述第1鏈環41之另一端，另一端乃可旋轉地加以固定之中 空的第2鏈環42加以構成之鏈環構造。對於中空的鏈環內 # 係敷設有對於前述加熱器7 1 Η之電源線，及溫度感測器7 1 S 之信號線等之配線44。真空內配線•配管機構40係經由伴 隨對於蒸鍍源部71之上下方向的移動而兩鏈環41及42乃產 生轉動之時，可安定維持將前述信號線、電源線的配線連 接於目的位置之狀態。 在如此之構成，如圖5所示，蒸鍍源部7 1係於開始真 空蒸鍍之前，在下降端的待機位置WSL，開啓開閉器74 ( 省略開閉器74之開關機構），將安裝於沿著由支持部件22 ® 與23所支持之水平方向的導件21可移動之支持體25之膜厚 監視器20，由驅動部24加以驅動，沿著排列成線狀之蒸鍍 源部71的複數之蒸鍍源71 a〜n的噴嘴73 a~n，以一定的速度 進行移動（掃描），監視蒸發量，將其監視的信號傳送至 控制部5 0。 膜厚監視器20係依據對應於附著在石英振盪器之成膜 材料的堆積量之頻率變化，檢測成膜速率之構成。膜厚監 視器2 0的檢測面2 8，係呈位於與對應於經由對於蒸鍍源部 71而言之基板保持手段82而保持成垂直之基板6的表面之 -13- 201103998 位置相同平面內（和蒸鍍源部7 1與基板6之間隔相同間隔 )地加以設置，呈可檢測對應於基板6表面之位置的蒸鍍 速率（每單位時間，蒸鍍的膜之厚度）之蒸鍍源部71之長 度方向（噴嘴73 a〜η之排列方向）的分佈。 在控制部50中，分析在對應於來自由膜厚監視器20檢 測之各噴嘴73 a~ri的蒸發量之基板表面位置的成膜速率， 檢查來自各噴嘴73a〜n之蒸發的狀態，比較於其他，可特 定檢測信號小之噴嘴，以及與預先設定來自所有的噴嘴之 檢測信號位準之基準位準做比較，而可檢查蒸發量之過多 〇 於圖6 ( a )〜（c )，作爲經由膜厚監視器20所檢測之 信號的例，顯示膜厚監視器20之位置與蒸鍍速率之關係。 圖6(a)係顯示在各位置，蒸鍍速率爲一定，且在基準範 圍之上限値Ru與下限値R 1之間，對於此情況係正常地執行 蒸鍍者。圖6(b)係顯示從某個位置，蒸鍍速率下降，而 複數之蒸發量下降之情況。此係將蒸鑛源7 1 a-η分爲複數 之區間，作爲於各區間單位，以加熱器7 1 Η進行加熱之構 成之情況而引起的例。對於此情況，係如以溫度感測器 7 1 S確認對應之區間的溫度同時，控制施加於加熱其區間 之加熱器71Η的電壓，蒸鍍速率乃呈在上述之基準範圍Ru 與R 1之間地加以調整即可。更且，圖6 ( c )係顯示來自複 數之蒸鍍源7〗a〜η之中的一個之蒸發量乃比較於其他而降 低之狀態，如特定對應之蒸鍍源71Χ，追究是否爲噴嘴73 之堵塞或加熱溫度之異常原因而採取其對策即可。 -14- 201103998 在圖6(b)及（c)的例中，顯示蒸鍍速率乃較下限 値R1爲下降之異常狀態爲例，但對於產生蒸鍍速率乃較上 限値Ru爲上升之異常狀態的情況，如以和上述同樣手法， 進行對策即可。 即，如根據本實施例，因可檢查從各噴嘴73 a~n放出 氣化之蒸鍍材料至處理室內部之狀態之故，可提昇更細腻 之蒸鍍速率的控制，即成膜於基板上之薄膜的膜厚分布均 鲁一性者。 掃描膜厚監視器20，檢查從噴嘴73a〜η放出以蒸鍍源 71 a〜η氣化之蒸鍍材料至處理室內部之狀態，確認無異常 之後，由上下驅動手段72，以一定的速度使蒸鍍源部71上 升，於配置於對向的面之基板6上，藉由遮蔽罩81而蒸鍍 發光材料。蒸鍍源部71係超過對向的基板6而到達至上升 端之待機位置WSu，在以開閉器75被覆前面之狀態，等待 對於接下來的基板之蒸鎪的開始。 ® 在本實施例中，因只將膜厚監視器2〇設置於蒸鍍源部 71之下降端側之待機位置WSL之故，對於蒸鍍源部71乃從 上升端側之待機位置WSu，開始下降時，未進行蒸發量之 監視。 圖7係顯示經由如此構成之處理室1之處理流程圖。作 爲在本實施形態之處理的基本想法，將基板的蒸鍍面作爲 上面加以運送，將上面運送之基板6直立成垂直，運送至 校準部8，進行蒸鍍。運送時基板6之下面乃如爲蒸鍍面， 有必要進行反轉，但上面爲蒸鍍面之故，只直立成垂直即 -15- 201103998 可。 首先，運入基板6(S701)，將基板ό直立成垂直而移 動至校準部8(S7〇2)，進行基板6與遮蔽罩81之位置調整 (S703 )。此時’基板6係將蒸鍍面做成上面而加以運送 之故’可直立成垂直即刻進行位置調整。位置調整係如圖 2之引導圖所示’以CCD相機（未圖示）照攝，設置於基 板6之校準標記84乃呈出現於設置在光罩8 ][ M的窗85之中心 地’經由將遮蔽罩8 1，以前述校準驅動部8 3進行控制之時 而進行。窗85的尺寸係例如爲寬度50"m，高度150/zm程 度。罩體81M之厚度乃4〇em、往後有成爲更薄之傾向。 運入基板6之間’蒸鍍源部71係退避至下降端之待機 位置WS1，各噴嘴73 a〜η前係由開閉器74所被覆。接著，當 開始基板6之位置調整時，開閉器74則開啓（S704 )，從 蒸鍍源71 a〜η蒸發之蒸鍍材料乃從各噴嘴73 a〜n放出至處理 室1之內部。 在此狀態，膜厚監視器20乃沿著各噴嘴73 a〜η開始掃 描（S 7 05 )，監視對應於基板6之表面的各位置之蒸鍍速 率，檢測從各噴嘴73 a~n放出氣化之蒸鍍材料至處理室內 部的狀態（S706 )。當膜厚監視器20之掃描結束（S 707 ) 時，由控制部50檢査各噴嘴73 a ~n及全體之蒸鑛速率（ S 7 08 )，對於有異常之情況，判斷原因爲噴嘴73a〜η的堵 塞或是加熱器71Η之施加電壓異常（S 709 ) ’對於加熱器 7 1 Η之施加電壓異常之情況，回饋於加熱器7 1 Η之施加電 壓（S710)，返回至S705，再次開始膜厚監視器移動。另 201103998 —方面，對於噴嘴73a〜η之堵塞之情況，發出警報通知異 常（S711 )。 如經由膜厚監視器20之來自各噴嘴73 的蒸發量之 檢查，和遮蔽罩81與基板6之位置調整結束之後，關閉開 閉器74 ( S712 )，由上下驅動手段72進行驅動，開始將蒸 鍍源部71移動至上方（S713)，以一定的速度移動蒸鍍源 部71之同時，將蒸發之蒸鍍材料71Z，從各噴嘴7 3 a〜η放出 至處理室1之內部，解開遮蔽罩81而蒸鍍至基板上，形成 薄膜（S714)。蒸鍍源部71當到達至上端時，蒸鍍源部71 之上升則停止（S715)，而當基板6的蒸鍍結束時，在上 升端之待機位置WSu，蒸鍍源部71之各噴嘴73 a〜η係在由 開閉器75加以被覆之狀態，至開始對於接下來之基板的蒸 鍍爲止進行待機。接著，從處理室1運出基板6(S716)， 等待接下來新的基板6’之運入。 接著，運入新的基板6’（S717)，將新的基板6’保持 成垂直（S718)，與遮蔽罩之位置調整結束時（S719)， 由上下驅動手段7 2進行驅動，開始對於蒸鍍源部7 1之下方 的移動（S720)，以一定的速度移動蒸鍍源部71之同時， 將蒸發之蒸發材料71Z，從各噴嘴73 a〜η放出至處理室1之 內部，解開遮蔽罩81而蒸鍍至基板上，形成薄膜（S721 ) 。蒸鍍源部7 1當到達至下端時，蒸鍍源部7 1之下降則停止 (S 722 )，結束新的基板6’的蒸鍍，運出結束蒸鍍之基板 6’（ S723 )。在此，在開始新的基板6’的蒸鍍時點，蒸鍍 源部7 1係位於上升端側，對於上升端側係因未設置有膜厚 -17- 201103998 監視器20之故，未進行蒸鍍源部71開始下降之前之來自各 噴嘴73 a~n的蒸發量之監視。即，未進行至（S7 04 )〜（ S711)爲止之對應流程之處理。 之後，重複進行上述流程》 如根據以上說明之實施形態，經由監視在基板6之表 面，蒸鍍源部71之各噴嘴73a~n的排列方向之蒸鍍速率分 布，調整來自各噴嘴73a〜η之蒸鍍物質的放出量之時，可 提供膜厚分布均一，信賴性高的有機電激發光裝置製造裝 置者。 上述之實施形態係對於所有將基板6的蒸鍍面作爲上 面而運送之情況，已做過說明。作爲其他之基板的運送方 法，係有將蒸鍍面作爲下面而運送之方法，將基板放入容 器等而直立加以運送之方法。 但，檢測在對應於上述基板表面之位置的蒸鍍速率之 分布，調整從蒸鍍源之各噴嘴所放出之蒸鍍物質之放出量 的基板想法，係對於運送方法並無關係之故，不論運送方 法爲何而可適用本發明。 另外，在上述說明中，以例說明過有機電激發光裝置 ，但亦可適用於與有機電激發光裝置相同背景之進行蒸鍍 處理的成膜裝置及成膜方法。 [實施例2] 在實施例1中，說明過在進行真空蒸鑛之處理室lbu內 ，將基板6以各1片進行處理的例，但在實施例2中，對於 201103998 經由於處理室Ibu內，設置1對基板保持手段82，於處理由 一方的基板保持手段82R所保持之基板之間，於其他之基 板保持手段82L，放置其他的基板，完成遮蔽罩81與基板6 之位置調整之時，提昇裝置之傳輸量之構成加以說明。 在實施例2中，與實施例1相異處係在處理室lbu的內 部，將遮蔽罩81與基板保持手段82、梳狀手部94、基板旋 轉手段93，由各具備在右側R線與左側L線之2系統而構成 的點。 對於與實施例1重複之部分，係省略說明，對於與實 施例1相異點加以說明。 圖8係顯示依據第2實施例之運送室與處理室的構成槪 要。 . 處理室的構成係經由處理內容而有所差異，但以真空 蒸鍍發光材料而形成電激發光層之處理室lbu (在第2實施 例中’表記爲處理室20 1 )爲例加以說明。設置於運送室 2 02之內部的運送機械手臂205係具有可左右旋轉構造之機 械臂251 ’對於其前端係安裝有基板運送用之梳狀手部252 〇 另—方面，對於處理室201的內部，係大致具備：蒸 發發光材料而蒸鍍於基板6之蒸鍍源部71，和將其蒸鍍源 部η ’沿著經由基板保持手段82R或82L而保持成垂直之基 板6 ’與基板6平行地驅動於上下方向之上下驅動部76，和 於基板6之必要的部份，蒸鍍發光材料之遮蔽罩81，和將 S板6’在運送機械手臂5之間進行收授之梳狀手部94，和 -19- 201103998 旋轉由梳狀手部94所接收之基板6而使其直立’移動至基 板保持手段82之基板旋轉手段93，和在L線與R線之間’沿 著軌道275移動蒸鍍源部71之驅動部276。並且’對於在實 施真空蒸鍍時，經由未圖示之真空排氣幫浦’內部係維持 成10 — 3〜10-4P a程度之高真空狀態。 然而，在圖8中，雖省略，但運送室202與處理室201 係由開閉可能的閘閥1 〇加以間隔。 圖9係說明蒸鍍源部271與經由基板保持手段282而保 持成垂直之基板6及遮蔽罩81的關係圖。第9圖（b)係在 第9圖（a)中，從箭頭B的方向而視的圖。蒸鍍源部71係 經由上下驅動手段72，沿著一對的導軸76而移動於上下方 向。 另外，如圖1 0所示，蒸鑛源部7 1係經由左右驅動手段 ，沿著軌道75而移動在左右之校準部L與R之間》對於蒸 發部271之左右之校準部L與R之間的移動路徑途中，係設 置有膜厚監視器22 0，膜厚監視器220的檢測面221係呈位 於與經由基板保持手段82R或82L而保持成垂直之基板6表 面相同平面內地加以設定。由左右驅動手段2 7 6加以驅動 ，沿著軌道275，以一定的速度，蒸鑛源部71移動在左右 之校準部L與R之間時，排列成線狀之蒸鍍源71 a〜η的各噴 嘴73a〜n乃通過膜厚監視器220之前方，來自各噴嘴73a〜η 之蒸發量乃作爲膜厚的變化，由膜厚監視器220加以檢測 ，將其所檢測之信號，傳送至控制部25 0。 在控制部250中，分析對應於來自由膜厚監視器220檢 201103998 測之各噴嘴7 3 a~n的蒸發量之檢測信號，檢査來自各噴嘴 7 3 a〜n之蒸發的狀態，比較於其他，可特定檢測信號小之 噴嘴73，以及與預先設定來自所有的噴嘴73之檢測信號位 準之基準位準做比較，而可檢査蒸鍍量之過多。 對於由控制部250特定比較於其他，檢測信號小之噴 嘴73x之情況，將在蒸鍍源部71之其噴嘴73x的位置，輸出 至顯示手段（未圖示）。 • 另外，對於與預先設定在所有的噴嘴73之檢測信號位 準之基準範圍做比較，蒸鍍速率乃超過基準範圍時，係由 控制部25 0，進行呈監視經由溫度感測器71 S而檢測得到蒸 發溫度之信號同時，使蒸鍍源部7 1之加熱器7 1 Η之施加電 壓降低之控制，對於蒸發量爲基準範圍以下時，由控制部 50，進行呈同樣地監視經由溫度感測器7 1 S而檢測得到蒸 發溫度之信號同時，使蒸鍍源部71之加熱器71Η之施加電 壓增加之控制。 ® 另外，在圖9(b)所示的構成中，經由將蒸鍍源 7 la〜η分爲複數之區間，設置加熱於各區間之加熱器71Η與 檢測蒸發溫度之溫度感測器71S之時，與預先設定來自各 噴嘴73 a〜η之檢測信號位準之基準範圍做比較，對於蒸發 量超過基準範圍時，經由由控制部2 50，於各區間，監視 經由各區間之溫度感測器7 1 S而檢測得到蒸發溫度之信號 同時’控制各區間之加熱器7 1 Η之施加電壓之時，可進行 更細腻之蒸鍍量分布的控制。 更且，對於來自監視之各噴嘴73 a〜n之檢測信號位準 -21 - 201103998 乃超過預先設定之基準位準的情況’或較預先設定之基準 位準爲下降之情況，控制部2 50係可發出警報，呈通知裝 置之異常於做業者地構成。 即，如根據本實施例，在第1實施例中，與使用圖6 ( a )〜（c )所說明的同樣地，檢查在各噴嘴7 3 a~n之蒸發的 狀態之故，可提昇更細腻之蒸鍍速率的控制，即，形成於 基板上之薄膜的膜厚分布均一性者。 圖11乃顯示在第2實施例之處理室1的處理流程圖。作 爲在本實施形態之處理的基本想法，與在第1實施例說明 之情況同樣地，將基板的蒸鍍面作爲上面加以運送，將上 面運送之基板6直立成垂直，運送至校準部8，進行蒸鍍。 運送時基板6之下面乃如爲蒸鍍面，有必要進行反轉，但 上面爲蒸鍍面之故，只直立成垂直即可。 另外，在本實施例中，對於蒸鍍工程所需之時間，和 運入基板6至處理室1而完成校準爲止所需的時間乃略相同 ，在本實施形態中係各約1分。因此，作爲在本實施形態 的基本想法，於在一方的線進行蒸鍍之間，在另一方的線 中，運出結束處理之基板而運入新的基板，進行位置調整 ，完成蒸鍍的準備》經由交互進行此處理之時，可縮短蒸 鍍源之待機時間，可減少待機中無需消耗之材料。 詳細說明其處理流程。首先，在R線中，運入基板6R (S1101R)，將基板6R直立成垂直，移動至校準部8R( S1102R)，進行基板6與遮蔽罩81之位置調整（S1103R) 。此時，爲了直立成垂直即刻進行位置調整，而將蒸鍍面 -22- 201103998 作爲上面而運送基板6。位置調整係如圖8之引導圖所示， 以CCD相機等之攝影手段（未圖示）而照攝，設置於基板 6之校準標記84乃呈出現於設置在遮蔽罩81R的窗85之中心 地，經由將遮蔽罩81R，以前述校準驅動部83R進行控制之 時而進行。本蒸鍍乃如發光成紅色（R)之材料，如圖3所 示，於對應於遮蔽罩81R之罩體81M的R之部分，開有窗口 ，基板6係成爲蒸鍍位於窗下之部分。此窗的尺寸係例如 爲寬度5〇/zm，高度150/zm程度。罩體81M之厚度乃40/zm 、往後有成爲更薄之傾向。 如位置調整結束之後，在L線側進行待機，將由開閉 器274L所被覆之蒸鍍源部71，由左右驅動手段2 76進行驅 動，沿著軌道2 7 5而移動至R線側（S 1 1 0 1 E。）此時，蒸鍍 源部7 1係以一定的速度移動在L線側與R線側之間，在從開 閉器274L相離之位置，經由排列成線狀之蒸鏟源71a〜n之 各噴嘴73 乃通過膜厚監視器220的前方之時，來自各噴 嘴73a〜n之蒸發量乃產生膜厚的變化，即作爲蒸鍍速率， 由膜厚監視器220加以檢測（S 1 1 02E )，將此檢測之信號 ，傳送至控制部25 0。 在對於蒸鍍源部71之R線側之移動結束（S11 03 E)之 後，由控制部250檢査對於各噴嘴73a~n及全體之蒸發量有 無異常（S 1 1 04E )，對於有異常之情況，係判斷原因爲噴 嘴73a〜η之堵塞或加熱器71H之施加電壓異常（是否可以加 熱器71Η之控制來對應）（S1105E)，對於加熱器71Η之 施加電壓異常之情況，係回饋於加熱器7 1 Η之施加電壓（ -23- 201103998 SI 106E )，將蒸鍍源，一旦從R線側移動至L線（SI 107E )之後，再次返回至S1 101 E之步驟’開始將蒸鍍源從L線 側移動至R線。另一方面，對於噴嘴73 a〜η之堵塞之情況， 發出警報通知異常（S1108E)。 遮蔽罩8 1與基板6R之位置調整則終了，經由膜厚監視 器220之來自各噴嘴73 a~n之蒸發量的檢査則結束，在R線 側之待機位置，蒸鍍源部7 1之各噴嘴7 3 a〜n乃由開閉器 2 7 411所被覆之狀態，在31104£判斷未有蒸鍍速率異常之情 況，由上下驅動手段72進行驅動，開始將蒸鍍源部7 1連續 性移動至上方（S1104R)，在從開閉器274R相離之位置， 將加以蒸發之蒸發材料71Z，從各噴嘴73 a〜η放出至處理室 1之內部，藉由遮蔽罩81而蒸鍍於基板6R上，形成薄膜（ S1105R)。蒸鍍源部71乃到達至一對之軌道276上端附近 ，完成基板6R之蒸鍍時，停止對於蒸鍍源部71之上方的移 動（S1106R)，在一對之導軸76R之上端部，蒸鍍源部71 之各噴嘴73 a~n乃由開閉器275R所被覆之狀態進行待機。 另一方面，在R線，於基板6R，在蒸鍍中，在L線中 ，進行與從R線的（S1101R)至（S1103R)爲止同樣的處 理。即，運入其他的基板6L ( SI 101L)，將該基板6L直立 成垂直而移動至校準部SL(S1102L)，進行與遮蔽罩81L 之位置調整（S1103L)。 完成R線的基板6R之蒸鍍，在一對之導軸76之上端部 進行待機之蒸鑛源部71係確認基板6L與校準部8L之位置調 整結束與否，由驅動部2 76加以驅動，沿著軌道2 75而移動 -24- 201103998 至L線側（SI 1〇8Ε )，成爲前面（設置有各噴嘴73a〜n的面 )乃由開閉器275L所被覆之狀態。在此，於從R線側移動 至L線側時，蒸鍍源部7丨係因在一對的導軸76之上端部進 行待機之故，未進行經由膜厚監視器220之來自各噴嘴 73a~n之蒸發量的檢査。另外，開閉器275R與275L係未分 離，而由連續之一體加以形成亦可。此情況，蒸鍍源部71 係在將設置有各噴嘴73a〜iv的面（前面），由開閉器所被 覆之狀態，從R線側移動至L線側》 接著，到達至L線側之蒸鍍源部7 1係由上下驅動手段 7 2加以驅動，開始移動至下方（S 1 1 0 4 L )，將從離開經由 開閉器275L之被覆處加以蒸發之蒸發材料71Z，從各噴嘴 73 a〜η放出至處理室1的內部，藉由遮蔽罩81而蒸鍍於基板 6L上，形成薄膜（S1105L)，蒸鍍源部71乃到達至一對之 軌道276下端附近，完成基板6L之蒸鍍時，停止對於蒸鍍 源部71之下方的移動（S1106L)，在一對之導軸76之下端 部，蒸鍍源部71之各噴嘴73a〜n乃由開閉器274L所被覆之 狀態進行待機。 另一方面，在R線中，確認蒸鍍源部71是否結束移動 至L線側之情況，開始從基板6R之處理室1的運出動作（ S1107R)。之後運入新的基盤6R’（S1108R)，將基盤 6R’直立成垂直而移動至校準部8R(S110 9R)，進行基板 6R’與遮蔽罩81R之位置調整（S1110R)。 之後，重複進行上述流程。如根據本實施例，除了蒸 鍍源部7 1之移動時間，未有無用地使用蒸鍍材料7 1 Z，而 -25- 201103998 可於基板上形成蒸鍍膜者》在本實施例中，如將必要的蒸 鍍時間與對於處理室之基板之放出入及花上校準之時間， 作爲約1分鐘，將蒸鍍源部7 1之移動時間作爲5秒，在只能 安裝1片基板的方式中，對於未貢獻於對於基板之蒸鍍的 無用之蒸鍍時間爲1分鐘情況而言，在本實施例中，可縮 短爲5秒。 另外，如根據上述本實施例，如圖1 1所示，在處理室 1之基板6每1片的處理周期係成爲實質上加上蒸鍍時間與 蒸鍍源部7 1之移動時間的時間，可提昇生產性。如以前述 條件評估處理時間，對於只能安裝1片基板的方式之2分鐘 而言，在本發明中係成爲1分5秒，可將相當於處理室1 一 個的生產性，提昇約2倍。 [實施例3] 在實施例1乃至3中，對於在處理大形基板上爲有利之 組合水平運送與垂直成膜的實施形態，已做過說明，但在 以下中，係顯示在中形蕋板之成膜所採用之組合水平運送 與水平成膜的裝置形態。 圖1 2係顯示有關本發明之水平運送，且進行水平成膜 之有機電激發光裝置製造裝置300的構成一例的圖。其裝 置形態係作爲一般的群組裝置，爲公知的構成，對於其構 成而言，於以下顯示適用本發明的例》 圖12之有機電激發光裝置製造裝置300係對於位置於 中央之多角形之運送室3 02a〜c而言，於其周邊，連結有加 -26- 201103998 載互鎖真空室331a、收授室304a~c或處理室301a-l~f-2之 構成的裝置形態。運送室3〇2 a〜c係於其中央，配置運送機 器手臂305a~c。運送機器手臂305 a〜c係取出放置在加載互 鎖真空室331a或收授室3 04a~c或處理室301a-l~f-2之基板 61，放置新的另外的基板61。 收授室304 a〜c係爲了在與鄰接之群組之間進行基板61 之收授而加以使用。在處理室301 a-Ι〜f-2之中，於處理對 象之基板61，實施經由真空蒸鍍之成膜處理。對於與構成 群組之各室之間，設置有閘閥310，可於各室保持真空度 。在加載互鎖真空室331中，具有關閉閘閥310，將運入之 基板61的環境，從大氣壓切換成真空，或從真空切換成大 氣壓之機能。成膜處理中，係各處理室30 la-Ι〜f-2及各運 送室3 02a〜c乃經由真空幫浦（未圖示）而維持10— 3〜10 — 5Pa台之真空度。 經由關閉具備於處理室301a-l〜f-2之閘閥310之時，成 膜處理中係可防止在各處理室301a-l~f-2產生的氣體，經 由傳播至其他的處理室301a-1〜f-2之時而產生之膜的純度 降低者。另外對於在維護時，將特定的成膜室301a-l~f-2 或運送室3 0 2 a~c，個別地做成大氣開放，成爲亦可將維護 後之裝置300全體的狀態回復所需之時間抑制在最小限度 〇 處理室3 0 1 a-1〜f-2之構成係以將有機層進行成膜之處 理301a-l爲例加以說明。 對於圖13係將依據第3實施例之運送室3〇2a〜c與處理 -27- 201103998 室301a-l~f-2之內部構造的槪要，舉運送室3 02a與處理室 3 0 1 a-1的例加以說明。如圖1 3所示，在本實施例中，將蒸 鍍源3 7 1進行定點觀測之膜厚監視器3 1 9之外，於蒸鍍源 3 7 1之上部，設置可將蒸鍍源3 7 1之長度方向於線上進行掃 描之膜厚監視器320。 設置於運送室3 02a內部之運送機器手臂3 05 a係具有可 旋轉與伸縮動作的機械臂351a，對於其前端係安裝基板運 送用之梳狀手部352a。 另一方面，對於處理室301a-l，係具有爲了從運送機 器手臂305a收授基板61之收授機構，遮蔽罩381，遮蔽罩 381與基板61之校準機構，高溫加熱有機蒸鍍材料而使其 氣化，具有指向性形成蒸鍍材料371Z之氣流375，噴射於 基板61下面而進行成膜之蒸鍍源371。 從運送機器手臂305 a運入基板61至成膜室301a-l之情 況，於吊鉤387上，插入保持基板61之梳狀手部352，下降 運送臂351，交付基板61至設置於基板周邊部的吊鉤387, 使梳狀手部352後退。於梳狀手部352插入時，使吊鉤387 上升，接受基板亦可。當接受基板6時，降低吊鉤3 87，在 接近基板6 1與遮蔽罩3 8 1之狀態，光學性地檢測基板上之 校準標記6A與遮蔽罩上之校準標記381A的同時，使吊鉤 3 8 7或遮蔽罩381進行微動，進行位置調整。在位置調整結 束後，使吊鉤387下降，於遮蔽罩381上，載置基板61。並 且使吊鉤3 8 7後退，拔出，從遮蔽罩381加以間隔。此時， 於遮蔽罩381上，有吊鉤387之引溝時，增加吊鉤387的爪 201103998 的厚度，成爲容易對於大的基板61之對應。遮蔽罩381係 具備罩體381M、框體381F，形成有校準標記381A。 蒸鍍源371係對於噴出蒸鍍材料371Z之氣體375的方向 而言，採用延伸於垂直方向之棒狀之所謂線源之形態’氣 流375之噴出口之噴嘴373係對於蒸鍍源371之長度方向而 言，於線上成列加以複數設置。此噴嘴係並非排列於如圖 14(a) ( b )所示之線上的圓形或孔’而如圖1 4 ( c ) ( d )所示之縫隙1個或複數個設置亦可。其他，如圖14(f) 所示，對於採用從設置於小形的蒸鏟源3 7 1 a〜η之各中心的 噴嘴3 73，供給蒸鍍材料之氣流3 75形式之蒸鍍源3 7 1的情 況，係準備複數小形的蒸鍍源3 7 1 a〜η，如排列於線上，可 得到同樣的效果。其蒸鍍源371 a~n之各噴嘴373係在面對 於基板6 1之狀態，保持特定的間隔，對於基板6 1平行，且 對於蒸鍍源371之長度方向而言，經由往返移動於直角方 向之蒸鍍源移動機構3 72，以特定速度進行掃描，對於成 爲基板61之對象的面全體而言，形成蒸鍍材料之薄膜。 含有各運送室3 02、處理室301、運送機器手臂305、 收授室304、蒸鍍源371之裝置300的全體，係由控制部350 加以控制。 蒸鍍源371之移動機構372係如圖13及圖15所示，將蒸 鍍源371 ’沿著一對之導軌3 72 L進行移動，經由設置於大 氣側之驅動馬達3 72M，移動搭載於蒸鍍源基座3 7 8之蒸鍍 源3 7 1。設置具有保持真空度之磁性流體密封於內部之真 空旋轉導入機構372S於處理室301a-l的壁面301a-lw，經 -29 - 201103998 由其真空側的旋轉軸，旋轉滾動螺旋3 72P。旋轉滾動螺旋 372P之兩端係由具備軸承之支持板376加以支持。對於搭 載蒸鍍源371之蒸鍍源基座378，係與旋轉滾動螺旋372P之 螺帽372K和引導一對之導軌3 72L上行走的導件3 72G連接 ，經由旋轉滾動螺旋3 72P的旋轉，蒸鍍源3 7 1係進行沿著 導軌372L之直線運動，成爲可往返之掃描成膜。 使用以上所示之機構，對於基板61而言，往返移動蒸 鍍源371而進行掃描成膜之後，係使蒸鍍源371退避，將基 板61，從遮蔽罩381剝離，再次由運送機器手臂3 05 a運送 至其他的處理室301，進行成膜處理。首先，對於載置基 板61於遮蔽罩381之情況，係掛上於吊鉤387而使基板61上 升。並且，運送機器手臂305係將梳狀手部352a插入於基 板61下部’使機械臂351a上升接收基板61。取代使機械臂 351a上升’而使吊鉤387下降，將基板61離開於梳狀手部 3 5 2 a亦可。另外’在由吊鉤3 8 7掛上基板之後，具有使運 送機器手臂3 05 a之梳狀手部3 52a上升的機能，收授基板61 亦可。 經由以上所示之方法，將蒸鍍膜成膜於基板6 1之情況 ’對於爲了確保膜厚之均一性，係不能欠缺蒸鍍源37丨長 度方向之溫度控制。如圖1 5所示，蒸鍍源3 7 1係於長度方 向分割成複數之加熱控制區塊3 7 1 B進行加熱控制。對於加 熱控制區塊371B’係設置有各加熱器371H。對於蒸鍍源 371內部係收納有裝塡蒸鍍材料371Z之堪鍋371C，經由對 於加熱器371H之通電’加熱坩鍋371C與塡充於此之蒸鍍材 201103998 料3 7 1 Z，並加以氣化。對於蒸鍍源3 7 1係具有檢測溫度之 熱電偶371S，對於控制裝置3 50係經由溫度感測器371S之 檢測的溫度輸出，呈成爲特定之處理溫度地進行控制。溫 度感測器37 1S係亦可設置1個於特定之加熱控制區塊371 B ，或各設置於各加熱控制區塊371B之任一。 對於設置溫度感測器於各加熱控制區塊3 7 1 B之情況， 呈在各加熱控制區塊做成同一溫度地，調整對於加熱器 371H之電力供給。一般而言，蒸鍍源371之長度方向的端 部係引起熱放射之故，比較於中央部，預測溫度降低。因 此，預先比較於蒸鍍源371之長度方向中央部，由多設定 對於兩側之加熱控制區塊371 B之加熱器371 Η的電力供給者 ，謀求蒸鏟源371全體之溫度均一化。 另外，於特定之加熱控制區塊371Β設置有溫度感測器 3 7 1 S之情況，例如，對於於蒸鍍源3 7 1之中央的加熱控制 區塊3 7 1 Β設置溫度感測器3 7 1 S之情況，預先較中央的加熱 控制區塊之加熱器3 7 1 Η，於周邊部之加熱器3 7 1 Η側，唯 一定比例或一定値多進行電力供給。蒸鍍源371之長度方 向的溫度均一性係一般而言，除使用於溫調節之溫度感測 器371S以外，將溫度感測器安裝於蒸鑛源371之各部而進 行測定，依據其結果，加減對於各加熱器371 Η之電力供給 增加份量，謀求溫度的均一化。 作爲氣體之放出速率的測定手段，使用石英振盪器326 式之膜厚監視器320。此係對於冷卻從蒸鍍源371所放出之 蒸鑛材料371Ζ的氣流375之石英振盪器326,於石英振盪器 -31 - 201103998 3 2 6檢測面，形成蒸鍍材料的膜，從經由此而產生之石英 振盪器3 26的石英振盪頻率數之變化，讀取於每單位時間 附著之蒸鍍材料的膜厚者。 通常，膜厚監視器3 20A、B係固定於對於成膜未有障 礙之蒸鍍源371的端部，或蒸鍍源371乃移動於退避位置W (在圖1 3，存在有蒸鍍源3 7 1之情況）時，可檢測地固定 於處理室301 a-Ι側。另外，經由蒸鍍源371之噴嘴3 7 3與膜 厚監視器320A、B之石英振盪器326A1—3、B1-3之間的 距離或傾斜，感測器之指向性，依存有其檢測値。 爲了防止蒸鍍物質附著於石英振盪器326A1— 3、B1-3之周圍，由蓋體31 9A、B被覆周圍，更且，爲了指向性佳 地檢測從蒸鍍源3 7 1所放出之蒸鍍物質，對於監視來自各 噴嘴之蒸發量之膜厚監視器3 20B，係做成由筒狀之防磁罩 328被覆石英振盪器326 B1— 3的上面之構造。更且，因於 各石英振盪器32 6A1— 3、B1— 3具有個體差之故，在與掃 描時之膜厚之間，如未進行校正而無法使用。對於提昇膜 厚監視器320A、B之膜厚計測精確度，係以特定的條件成 膜於基板61上，取出其基板之後，從以橢圓偏光計等之計 測器測定膜厚之結果，算出校正係數之處理乃必要。從此 之後，經由對於從膜厚監視器3 20A、B所檢測之數値，乘 上校正係數之時，成爲可以即時高精確度地計測氣化之蒸 鍍材料3 7 1 Z放出速率或蒸鍍速率之分布。 作爲在本發明之實施例，如圖1 3所示，對於蒸鍍源 371而言，固定第1膜厚監視器32 0A，於蒸鍍中，與蒸鍍源 -32- 201103998 371—起移動，於蒸鍍中，經常監視來自蒸鍍源371之蒸發 量，將第2膜厚監視器320B設置於處理室301a-l。第2膜厚 監視器320B係在蒸鍍材料371Z之氣流375未達到至基板61 之蒸鍍源371的退避位置W，呈對向於蒸鍍源371之噴嘴 373地朝石英振盪器3 26 (參照圖15)。 第2膜厚監視器320B係經由蒸鍍源371於退避中’掃描 於蒸鍍源371之長度方向的移動機構317,呈讀取從各噴嘴 373所放出之氣化的蒸鍍材料之放出速率之分布地加以設 置。與蒸鍍源371之往返移動機構同樣地，於處理室301a-1側設置2支線性導軌321，做成可與蒸鍍源371之噴嘴321 的列平行，且沿著噴嘴3 73的列而移動第2膜厚監視器3 20B 〇 於處理室301a-1外部，設置馬達324M，旋轉具有保持 真空密度之磁性流體密封之真空旋轉導入機構324S，旋轉 以連接於此之1對之支持構件322所支持之滾動螺旋324P。 滾動螺旋之螺帽324K與線性導軌的導件機構3 25係連接於 第2膜厚監視器320B，經由馬達324M之旋轉，第2膜厚監 視器3 20B係進行蒸鍍源371之長度方向的掃描測定。 以往，在成膜於基板61之後，於蒸鍍源371之長度方 向，以膜厚測定機或階差測定機而測定基板6 1上之膜厚， 而膜厚呈未有與其他有大相異處地，調整蒸鍍源371之各 加熱區塊371B之加熱器371H。但，因無法測定從蒸鍍源 371之各噴嘴373所放出之氣化的蒸鍍材料375之放出速率 之分布之故，即使可檢測膜厚之特異點，受到B那個加熱控 -33- 201103998 制區塊3 7 1 B之影響乃不易判斷，謀求膜厚之均一化的調整 作業困難，而需要大量的時間。 另一方面，經由本發明，與以往同樣地，經常性地監 測特定部分之氣化的蒸鍍材料之放出速率，不只可進行蒸 鍍源3 7 1之溫度控制，還可計測從蒸鍍源3 7 1之各噴嘴3 7 3 所放出之蒸鍍材料之放出速率之分布。因此，依據從蒸鍍 源371之各噴嘴3 73所放出之蒸鍍材料之放出速率之分布的 計測，再調整對於加熱蒸鍍源3 7 1之加熱控制區塊3 7 1 B中 的加熱器3 7 1 Η而言之電力供給狀態，呈配合均一化從蒸鍍 源3 7 1之各噴嘴3 73所放出之蒸鍍材料氣體之放出速率或想 定之放出速率的曲線地進行控制亦可。 膜厚監視器3 20 Α及13係一般而言，當急遽的溫度變化 產生時，因產生計測誤差之故，經常施以水冷。但，對於 第2膜厚監視器320B之掃描開始時，突然受到來自蒸鍍源 37 1的熱放射，而容易產生經由溫度變化之計測誤差。因 此，筆者們係對於掃描第2膜厚監視器3 20B時，在開始受 到蒸鍍材料的氣流3 75之位置，呈進行一定時間停止，溫 度安定之後再開始第2膜厚監視器3 20B之掃描地變更驅動 機構3 1 7之控制。如根據如此，成爲可精密地測定蒸鍍源 371之長度方向的氣化之蒸鍍材料之放出速率的分佈者 於第2膜厚監視器320B之掃描中，從鄰接之噴嘴3 73所 放出之氣流375乃入射至石英振盪器326之故，在進行正確 之裝置診斷時，在局部範圍或在噴嘴各1個之範圍正確地 測定氣化之蒸鏟材料的放出速率則爲困難。因此，如圖1 5 -34- 201103998 所示，將第2膜厚監視器320B之石英振盪器326周圍，由筒 狀的防磁罩328被覆，對於第2膜厚監視器3 20B具有指向性 。其結果，可排除從鄰接之噴嘴發射之斜面入射之蒸鍍材 料的氣流3 75，可更正確地在噴嘴3 73單位，或局部的範圍 ，測定蒸鍍源371之長度方向的氣化之蒸鍍材料之放出速 率。 將上述的測定結果之一例，示於圖1 6 ( a )〜（c )。 在此例中，於蒸鍍源371之噴嘴373所有乃具有同一蒸鍍材 料之放出速率之情況，對於基板而言可得到均一膜的例。 經由以筒狀的防磁罩328被覆第2膜厚監視器320B之石英振 盪器326之周圍之時，對於蒸鍍源371之噴嘴373爲孔狀之 情況，石英振盪器3 26乃來到噴嘴的正面時檢測之速率係 達到峰値。適宜調整掃描速度，在掃描開始之後的數秒， 如確認於噴嘴3 73的正面是否有通過石英振盪器326，可把 握各速率之峰値係對應於哪個噴嘴3 73的孔。如爲正常， 如圖1 6 ( a )，可反覆測定相同高度之波形。對於圖1 6 ( b )係顯示來自加熱控制區塊371B之蒸發量下降之狀態。另 外，對於圖16(c)係顯示於一個噴嘴產生堵塞而蒸鍍物 質之放出量下降之狀態。 然而，在上述實施例中，將如圖14(a)或（b)所示 之孔狀的噴嘴3 73 C之配列作爲前提，但在如圖1 4 ( c )或 (d )所示之槽溝形式之噴嘴3 73 S中，所觀測的速率之測 定値係成爲圖1 7 ( a )〜（c )所示之圖表，如爲正常，如 圖1 7 ( a )，除了端部，不論位置而檢測一定的値。 -35- 201103998 另一方面，對於於一部分的加熱控制區塊，產生加熱 器電力之供給難以預料之情況，如圖1 7 ( b )所示，對於 對應於產生不良情況之過熱控制區塊之位置的膜厚監視器 輸出，產生有速率的降低。更且，於蒸鍍源371之槽溝 3 73 S之一部分產生有堵塞之情況，如圖17(c)所示，於 膜厚監視器輸出之一部分，產生有極小之速率降低。 另外，如圖14 ( e)所示，亦可以由多孔質之物質379 被覆蒸鑛源371之上面，通過其多孔質之物質3 79而放出至 真空室側之蒸鍍材料加以成膜者。在以下所舉之噴嘴373 之長度方向或配向方向之氣化的蒸鍍材料之放出速率之分 布測定結果之應用例中，將如圖1 4 ( a )或（b )所示之孔 形式的噴嘴3 73之檢測作爲前提，但在如圖14 ( c )或（d )所示之槽溝形式之噴嘴的情況，如於事前設定取樣位置 ，進行評估，亦可進行同樣的處理。如將測定噴嘴3 73之 長度方向或配向方向之氣化的蒸鍍材料之放出速率之分布 的結果，應用於加熱器控制，如以往，進行付膜於基板之 同時，將對於各加熱器371H之供給電力調整，無需付膜於 基板，而可以裝置單體，自動且更精密地加以執行者。 例如，在特定之加熱控制區塊的噴嘴各部之氣化的蒸 鍍材料371Z的放出速率乃部分降低，以及過剩的情況乃在 連續稼働中經常產生。在初期的狀態，即使整頓蒸鍍源 3 7 1之各加熱控制區塊3 7 1 B的溫度平衡，在連續稼働之中 ，蒸鍍源371內部之蒸鍍材料371 Z之消耗狀態，及與收納 此之坩鍋37 1C之接觸狀態產生變化，進而蒸鍍材料之氣化 201103998 狀態產生變化者。以往係必須進行成膜，測定膜厚，而方 能檢測如此狀態。 在本發明中，因可自動地檢驗如此狀態之故，對於對 應之加熱控制區塊371B之加熱器371H之電力供給量的增減 調整，再次在第2膜厚監視器320B，掃描蒸鍍源371，以詳 細地確認是否消解氣化之蒸鍍材料的放出速率分布的形式 而可進行回饋。如自動地判定上述，將調整之演算法附加 至裝置之控制手段3 50，亦可在裝置內呈自動地維持基板 61的膜厚爲均一地，進行對於蒸鍍源371之各加熱器371H 的電力供給控制。 接著，依據圖18，說明於對於基板61之蒸鍍開始前進 行之蒸鍍速率確認的方法。 首先，將蒸鍍源371移動至退避位置（S1801)、接著 ，在退避位置，將第2膜厚監視器320B，以一定速度移動 至蒸鑛源371之噴嘴排列方向，檢測來自各噴嘴之氣化的 蒸鍍材料之放出量（S18 02 )。接著，在控制部350，從膜 厚監視器320B之移動時間與檢測値之峰値的關係，取得蒸 鍍源371之噴嘴373位置與測定値之匹配（S1803)，以蒸 鏟源371之各加熱控制區塊單位，求取來自各噴嘴3 73之放 出量的峰値平均（S1 8 04 )。接著，將來自安裝控制用熱 傳導之加熱控制區塊的各噴嘴373之放熱量平均値，作爲 基準，比較來自各加熱區塊之各噴嘴373之放熱量平均値 (S1805)，差乃超出預先設定之容許量，檢查加熱區塊 之有無（S 1 8 06 )，對於差乃超出容許量，判定爲大的加 -37- 201103998 熱區塊係降低其過熱區塊之加熱器電力（S 1 8 07 )，再次 重複從S1802之步驟。 另一方面，對於判斷差乃未超出容許量之情況，接下 來差乃超出容許量，檢査加熱區塊之有無（S1808)，對 於差乃超出容許量，判定爲小的加熱區塊係增加其過熱區 塊之加熱器電力（S1809)，再次重複從S1802之步驟。對 於所有的加熱區塊，與基準値的差乃判定爲容許範圍內之 情況，係判定爲正常（S 1 8 1 0 )，結束操作。 在以上，將比較於基板6 1之寬度，蒸鍍源3 7 1之長度 方向的寬度爲充分長之情況爲前提，對於此情況，來自哪 個噴嘴3 73氣化之蒸鍍材料的放出速率乃必須爲相同峰値 。但，對於基板61之寬度而言，蒸鍍源371之突出量乃比 較短的例，對於爲了作爲確保在基板61上之膜厚均一性， 亦考慮將從蒸鎪源371之兩端的噴嘴373所放出之蒸鏟材料 氣體的放出速率乃較中央部爲高之情況，作爲正常的情況 。將由此情況之蒸鍍材料氣體的放出速率之上述檢測系統 之輪廓檢測例，示於圖1 9 ( a )及（b )。 圖19(a)係顯示監視來自具有如圖14(a)或（b) 所示的孔狀之噴嘴的蒸鍍源3 7 1之蒸發狀態結果。另外， 對於圖1 9 ( b )係顯示監視來自具有如圖1 4 ( c )或（d ) 所示的縫隙狀之噴嘴的蒸鍍源3 7 1之蒸發狀態結果。在 端部提昇加熱溫度，增設噴嘴373，將噴嘴3 73做成大口徑 化，或經由縮短噴嘴3 73的長度之時’可得到如此之輪廓 。對於如此的例而言’對於增減部分氣化之蒸鍍材料氣體 -38- 201103998 的放出速率之情況，同樣地經由自動溫度控制可維持狀態 。對於爲了實現此，將以對於基板6上的膜成爲均一之加 熱控制區塊371B的電力供給條件下之氣化的蒸鍍材料的放 出速率分布，訂定爲基準輪廓，之後係如呈配合來自各噴 嘴3 73所放出之蒸鍍材料氣體的放出速率地進行調整即可 〇 另一方面，由第二膜厚監視器320B掃描的結果，在有 氣化的蒸鍍材料的放出速率乃極端減少之噴嘴3 73的情況 ’或加熱控制區塊371B之中局部氣化之蒸鍍材料的放出速 率降低之構成情況中，懷疑有蒸鍍材料因某原因析出堵塞 於噴嘴3 73之現象。 確認如此之狀態情況，在對於加熱器之供給電力的調 整中’氣化之蒸鍍材料的放出速率係不會回復之故，從防 止不良之製造的觀點，對於裝置管理者，發出警報，或進 行停止接收往成膜室的基板等之處置者爲佳。此係亦仍然 經由搭載上述判定演算於控制部3 5 0之時，可實現自動防 止不良之製造的機能。 將以上的動作之處理流程，使用圖2 0加以說明。 首先，將蒸鍍源371移動至退避位置（S2001)、接著 ’在退避位置，將第2膜厚監視器320B，以一定速度移動 至蒸鍍源3 7 1之噴嘴排列方向，檢測來自各噴嘴之氣化的 蒸鍍材料之放出量（S2002 )。接著，在控制部3 5 0，從膜 厚監視器320B之移動時間與檢測値之峰値的關係，取得蒸 鍍源371之噴嘴3 73位置與測定値之匹配（S2003 )，求取 -39- 201103998 來自蒸鍍源371之各噴嘴373之放出量的峰値平均（S2004 )。接著，依據來自各噴嘴3 73之放出量的平均値而設定 基準値（S2005)，將來自各噴嘴373之放出量，比較基準 値與平均値，檢查差乃超出預先設定之容許値的噴嘴之有 無（S2006 )，而差完全在容許値以下之情況係判定爲正 常（S2007 )，結束操作。 另一方面，對於有差爲容許値以上的噴嘴之情況，判 斷重複幾次從S2002至S2006爲止之步驟（S2008)，對於 重複數乃預先設定之η次以下的情況，係返回至S2002之步 驟，執行至S2006的步驟。如果’對於重複從S2〇〇2至 S2006爲止之步驟的次數乃即使達到η次，亦有差爲容許値 以上的噴嘴之情況，係判定噴嘴堵塞（S2009 )，排除位 於處理室3 0 1內之基板6 1而關閉處理室3 0 1之閘閥3 1 0 ’做 成禁止接受基板（S2010)，產生警報（S2011)而結束。 在以上所示，蒸鍍源371之長度方向的氣化之蒸鍍材 料371Ζ之放出速率之分布的測定資料係在每成膜1片基板 61，於其動工前或後，可儲存資料。因此’於不良發生時 ，亦可作爲爲了進行原因工程之特定的品質管理資料而活 用。 在上述之實施例中，於從蒸鍍源371之噴嘴3 73產生之 氣流375乃未到達至基板61之退避位置w，移動蒸鍍源371 ，計測蒸鍍源3 7 1之長度方向的氣化之蒸鍍材料之放出速 率之分布。但，即使未移動蒸鍍源371至退避位置W，於 基板61與蒸鍍源371之間’設置與圖5所示之開閉器同等之 -40- 201103998 可開閉手段，如阻止對於基板6 1之蒸鍍材料之氣流3 7 5的 到達，亦可得到相同效果。 接著，在實施例3中，對於監視膜厚監視器320A及 3 2 0B，預測其壽命同時，依序重複對於基板61之蒸鍍而執 行之操作的步驟，使用圖2 1加以說明》 首先，作爲開始於基板61之蒸鍍之前的準備作業。執 行以下。 • 最先，以與蒸鍍源371連動之膜厚監視器32〇A，測定 從蒸鍍源371之各噴嘴所放出之氣化的蒸鍍材料之放出速 率（S2101)。接著，以特定的速度驅動蒸鍍源371，經由 蒸鍍而形成薄膜於樣品基板上（S2 102)。 接著，計測形成於樣品基板上的薄膜而求取膜厚的平 均値（S2103)。依據在S1201所測定之蒸鍍材料的放出速 率與在S2 103所求得之膜厚的平均値，使用（數1)算出膜 厚監視器320A之補正係數a (S2104)，使用其算出之α © 的値，校正膜厚監視器320A(S2105)，將蒸鍍源371移動 至退避位置（S2106)。 [數1] (蒸鍍源371之驅動速度)X (膜厚測定値） α _ (蒸鍍材料之放出速率的測定値)X (掃描次數^ 接著，在退避位置，以膜厚監視器3 20Β掃描在蒸鍍源 371上，檢測來自各噴嘴之氣化之蒸鍍材料的放出量（ S2107)，來自各噴嘴之氣化之蒸鍍材料的放出量之峰値 平均値（S2108)。接著，使用所算出之來自各噴嘴之氣 化之蒸鍍材料的放出量之峰値平均値與校正之膜厚監視器 -41 - 201103998 320A之蒸鍍材料的放出速率，使用（數2)算出將膜厚監 視器320A作爲基準之補正係數召（S2109)，使用其算出 之補正係數冷，校正膜厚監視器320B(S211〇)。 [數2] β 曲膜厚監視器320B測定的出量之峰値平均値） …（數2) (校正之膜厚監視器320&蒸鍍材料的放出速率) 在以上，結束開始對於基板61之蒸鍍之前的準備作業。 接著，開始對於實際的基板61之蒸鍍。 於對於基板61之蒸鍍中或蒸鍍的空檔，於進行膜厚之 監視器的膜厚監視器32 0Α及320Β之石英振盪器326的檢測 面，堆積有蒸鍍材料時，石英振盪器326之晶體振盪頻率 則下降。膜厚監視器320 Α及3 20Β乃將每單位時間之石英振 盪頻率的變化，變換成成膜速率者，析出的膜厚與石英振 盪頻率之變化乃在線形性變化之範圍而使用。因此，於超 出其線形性變化之範圍的下限之前，預測膜厚監視器3 20A 及3 20B之壽命時期，在壽命時期到達之前，交換膜厚監視 器3 2 0 A及3 2 0B，但在未出現膜厚不良品，且不降低生產力 而持續生產上而成爲重要。 因此，開始對於基板6 1之蒸鍍之後，檢測膜厚監視器 320A及320B之石英振盪頻率，從其頻率數預測膜厚監視器 32 0A及320B之的壽命（S2121)，判斷壽命到達是否將近 (S2122)，對於膜厚監視器320A及320B之任一至今仍有 充分壽命之情況，在S2121檢測膜厚監視器320A及320B之 石英振盪頻率同時，重複蒸鍍。 另一方面，對於判斷爲壽命到達將近時，判斷膜厚監 -42- 201103998 視器320A及3 20B之雙方同時既將達到壽命，或任一方既將 達到壽命（S2123 )，對於判斷爲膜厚監視器320A及320B 之雙方同時既將達到壽命之情況，首先，記億膜厚監視器 3 20B之前的檢測値（S2131 )，更換膜厚監視器320A之石 英振盪器3 26 ( S2132)。 接著，由更換其石英振盪器3 26之膜厚監視器320A， 測定從蒸鍍源371之各噴嘴所放出之氣化的蒸鍍材料之放 出速率（S2133)，經由下述之（數3)算出膜厚監視器 3 20A之補正係數α的新値（S2134 )，校正膜厚監視器 320Α ( S2135)。 [數3] β X (在記憶膜厚監視器320Β之前的檢測値)X (蒸鍍源371之驅動速度) ~ (膜厚監視器320Α之放出速率的測定値)X (掃描次數) 、數 接著，使用其校正後之膜厚監視器320Α而返回至 S2 122，進行對於基板61的蒸鍍，檢測膜厚監視器320Α及 320Β之石英振盪頻率數，從其頻率數預測膜厚監視器320Α 及3 20Β之壽命。其結果，對於在S2 123判斷一方的膜厚監 視器之壽命到達將近之情況，判斷爲哪一個膜厚監視器（ S2 141 )，對於判斷爲膜厚監視器320Α之情況，係執行從 前述S2131至S2135爲止之步驟。 另一方面，對於判定爲膜厚監視器3 20Β之壽命到達將 近之情況，記億膜厚監視器320Α之前的檢測値（S2 142 ) ，更換膜厚監視器320B之石英振盪器326 ( S2143)。接著 ，由更換其石英振盪器3 26之膜厚監視器320B，測定從蒸 鍍源37 1之各噴嘴所放出之氣化的蒸鍍材料之放出速率（ -43- 201103998 S2 144 )，經由下述之（數4 )算出將膜厚監視器A作爲基 準之膜厚監視器3 20B的補正係數冷的新値（S21M )，校 正膜厚監視器320B ( S2147 )。 [數4] ^ (由膜厚監視器320B測定的出量之峰値平均値) P=(在記憶膜厚監視器320&前的檢測値） …（數） 接著，使用其校正後之膜厚監視器320B而返回至 S2 122，進行對於基板61的蒸鍍，檢測膜厚監視器320A及 3 2 0B之石英振盪頻率數，將從其頻率數再次預測膜厚監視 器3 20A及3 20B之壽命情況，重複基板61之處理同時加以執 行。 在圖15所示之構成，在固定於蒸鍍源71371之第一膜 厚監視器320A，與測定蒸鍍源371之噴嘴3 73之長度方向或 配列方向的氣化之蒸鍍材料371Z之放出速率之分布的第二 膜厚監視器3 20B之間，顯示蒸鍍源371乃於稼働中，較以 往高精確度地進行自動校正的例。 長期間連續稼働真空蒸鍍裝置之情況，如圖1 5所示， 在第一與第二膜厚監視器3 20A、B之測定中，使用石英振 盪器326而進行。各膜厚監視器3 20A、3 2 0B係具有複數石 英振盪器326。複數之石英振盪器326A — 1〜3及32681~3係 固定於各回轉台329A或B。石英振還器326A—1〜3及 326B1〜3係與膜厚監視器320A及320B，在測定位置加以電 性連接，測定石英振盪器326A- 1〜3及3 26B1〜3的發信頻 率數。 於石英振盪器326A — 1~3及326B1-3之檢測面’堆積 201103998 有蒸鍍材料時，石英振盪頻率數則下降。膜厚監視器3 20A 及3 2 0B乃將每單位時間之石英振盪頻率數的變化，變換成 成膜速率者。在膜厚監視器320A、320B中，析出之膜厚與 石英振盪頻率數的變化乃在線形性變化的範圍而使用之故 ’在此範圍的下限附近，切換旋轉台而安裝其他的石英振 M §gf 3 2 6 A — 1 〜3 及 326B1 〜3。 一般而言，在膜厚監視器之構成中，依據進行付上膜 ，進行膜厚計測的結果而加以進行。石英振盪器326A -1〜3及326B1〜3係對於其線形性雖有些微，但仍具有個體差 。因此，以往係在精密地進行膜厚控制之情況，對於所有 石英振盪器326A-1〜3及3 26B1~3而言，必須成膜於基板 而進行校正，對於程序上需要時間。 在本實施例中，至少在蒸鍍開始之唯1次，使用蒸鍍 於基板61之膜厚的測定資料之膜厚監視器320A、320B的校 正乃爲必要，但之後對於連續稼働時，可不進行對於基板 6 1之附加膜而進行校正。 首先，進行爲將蒸鍍源371進行成膜之溫度設定。之 後，以特定掃描的速度掃描蒸銨源371，對於基板61實施 成膜處理。記錄與此時之蒸鍍源371連動動作之第一膜厚 監視器320A之蒸發速率同時，計測附著於基板61之膜厚。 並且，對於第一膜厚監視器之蒸發速率測定値與實際上附 著於基板之膜厚的比，產生與特定的基準値偏差之情況， 校正乘上補正係數（材料穩定性）而計測之蒸發速率的値 。然而’對於變更掃描速度之情況，對於蒸發速率而言， -45- 201103998 從膜厚與掃描速度的積的比，求取材料穩定性亦可。 接著，經由以讀取蒸鍍源3 7 1之噴嘴之長度方向或配 列方向的氣化之蒸鍍材料371Z之放出速率之分布之第二膜 厚監視器320B，掃描蒸鍍源371之時，求取氣化之蒸鍍材 料371Z之放出速率之平均値。並且，求取校正完成之與第 一膜厚監視器320A的比。於兩者產生偏差之情況係求取補 正係數，呈成爲特定的値地進行調整。 在前述2個操作中，先校正第二膜厚監視器3 20B，將 φ 第二膜厚監視器3 20B唯基準，校正第一膜厚監視器3 20A亦 可 0 在連續稼働中，在第一或第二膜厚監視器3 2 0A、3 20B 中，於接近於哪一方之石英振盪器326A-1〜3及326B1〜3 之使用限度之情況，切換接近於使用限度之膜厚監視器 32 0A、B之石英振盪器32 6A-1〜3及326B1〜3，由將另一方 膜厚監視器3 20A、B之切換之前的測定結果爲基準進行校 正者，可不停止生產而短時間，且高精確度進行校正。 φ 假設，對於第一或第二膜厚監視器320A、320B乃同時 接近於使用限度之情況，例如，如切換早先堆積膜於石英 振盪器32 6A — 1~3及326B1〜3之第一膜厚監視器的石英振 盪器32 6A-卜3，在校正完成之後，切換第二膜厚監視器 的石英振盪器326B- 1〜3而進行校正即可。 在本實施例中，顯示對於在有機電激發光顯示裝置之 製造工程的蒸鍍處理，本發明之適用例。如根據本實施例 ，不只有機膜，在金屬膜之蒸鍍處理，亦顯示同樣的效果 -46- 201103998 。另外’對於有機電激發光顯示裝置以外，在使用對於大 面積基板而言之蒸鍍處理的有機電激發光照明裝置之製造 工程’亦可得到同樣的效果。 另外’在上述實施例中，已說明經由真空蒸鍍，將有 機蒸鍍膜形成於基板上的裝置例，但本申請發明並不限定 於此’對於有機膜以外之蒸鍍薄膜，例如金屬薄膜，或無 機材料系之薄膜的形成，亦可適用。 [實施例4] 在實施例3中，將運入至處理室301 a的基板61爲1片的 情況，舉例做過說明。在此係如圖22所示，於處理室40 1 內，將基板62，排列成水平方向而放置2片，並於以下顯 示具有2個之成膜位置R、L的一實施形態。更且在圖23中 ，詳細顯示處理室401與運送機器手臂405。在本實施例之 處理室40 1的構成係與在實施例3所說明之圖1 3及圖1 5所說 ©明之構成，基本上爲相同，但於一個處理室401的內部， 設置2個之成膜位置R與L，在其間移動有蒸鍍源471的點爲 不同。在真空內之運送機器手臂40 5係通常爲進行機械臂 的伸縮，旋轉，上下3個動作者，例如，於一個處理室 4 0 1 a內，設置平行排列之成膜位置R與L之情況’將基板6 2 的方向，對於運送機器手臂405之伸縮方向而言’未傾斜 基板6 2時’ 2個基板6 2係未平行排列。如圖2 2及2 3所不’ 在處理室40 1 a，對於將2片的基板並列地排列’在收授室 402a，於運送機器手臂405接收基板62之前’將特定量基 -47- 201103998 板62做傾斜’在手部452上接收基板62時，對於運送機器 手臂405之機械臂451的伸縮方向而言，呈傾斜地保持，於 放置基板62至處理室401 a時，作成2個基板62呈平行地排 列。4 0 4 a ~ c係收授室。 在圖22及23所示的例中，在處理室401a之第一成膜位 置R’對於一方的基板62而言，掃描蒸鍍源471而呈成爲特 定膜厚之蒸鍍材料的膜地進行成膜。同時在處理室40 la之 第二成膜位置L中，經由運送機器手臂405而運出處理完成 之基板62，運入未處理之基板62，進行基板62與遮蔽罩 481之位置調整，將基板62在與遮蔽罩481進行校準而重疊 之狀態進行待機。 蒸鍍源471之構成係具有與在第3實施例使用圖15所說 明之構成相同構造。 如在第一成膜位置R之成膜結束之後，將蒸鍍源471移 動至退避位置W，做成蒸鍍材料的氣流475呈不會直接接 觸於基板62或遮蔽罩481。並且，蒸鍍源471係從成膜位置 R移動至成膜位置L。在此時之退避位置W的蒸鍍源47 1之 移動手段之詳細，示於圖24。2個成膜位置R、L乃與掃描 方向平行之位置關係的情況，在蒸鍍源退避位置W，於蒸 鍍源之長度方向（與掃描方向直角方向），移動蒸鍍源 471 ° 蒸鍍源47 1係到達至退避位置W時，線性導軌48 9與由 滾動螺旋492P及移動部件491所構成之移動機構，由導銷 490結合。在此狀態，經由以設置於處理室40 1外部之馬達 -48- 201103998 492M，藉由真空旋轉導入機構492S ’旋轉滾動螺旋492， 將與移動部件491和導銷49〇繫合之蒸鍍源471，於長度方 向，從成膜位置R移動至成膜位置1者’從掃描設置於成膜 位置R之蒸鍍源471之蒸鍍源基座478A至設置於成膜位置L 之蒸鍍源基座478B ’將蒸鍍源471沿著導溝479加以滑動而 更換載置位置。 其蒸鍍源471之移動機構乃一例’如可得到同樣效果 ，亦可爲任何構造。 由如此作爲，由將基板的成膜’在2個成膜未至交互 進行處理者，可排除浪費的時間’蒸鍍源之稼動率則提升 ，進而提升高價之蒸鍍材料的使用效率。特別是成膜時間 ，較對於基板之運入•出、基板與罩體之校準所耗時間爲 長之情況，係成爲可將無用的時間’只對於蒸鍍源之移動 時間作爲縮短。 如上述，對於蒸鍍源471乃進行移動之情況，經由將 測定蒸鍍源471之噴嘴之長度方向或配列方向的氣化之蒸 鍍材料之放出速率之分布之第二膜厚監視器420B，設置於 從蒸鍍源471之成膜位置R至成膜位置L的移動路徑上之時 ，可測定蒸鍍源之噴嘴之長度方向或配列方向的氣化之蒸 鍍材料之放出速率之分布。此情況第二膜厚監視器42 0B係 如固定於2個之成膜位置R與L之中間附近的處理室410側即 可。如由此作爲，與實施例3同樣地，成爲可測定蒸鑛源 47 1之噴嘴47 3之長度方向或配列方向的氣化之蒸鍍材料 471Z之放出速率之分布。 -49- 201103998 接著，在實施例4，將於蒸鍍開始前進行之蒸鍍速率 確認之處理步驟，使用圖2 7加以說明。 首先，將蒸鍍源471移動至退避位置（S2701)、接著 ，在退避位置，在與第2膜厚監視器420B對向的位置，以 —定速度移動蒸鍍源471至配列有噴嘴之長度方向，檢測 來自各噴嘴之氣化的蒸鍍材料之放出量（S2702 )。接著 ，在控制部450，從膜厚監視器420B之移動時間與檢測値 之峰値的關係，取得蒸鍍源471之噴嘴473位置與測定値之 匹配（S2 703 )，以蒸鍍源471之各加熱控制區塊單位，求 取來自各噴嘴473之放出量的峰値平均（S27 04 )。接著， 將來自安裝控制用熱傳導之加熱控制區塊之各噴嘴473的 放出量平均値，作爲基準，比較各加熱區塊之各噴嘴473 的放出量平均値而求取差（S 2705 )，差乃超出預先設定 之容許値，檢查放出量大的加熱區塊之有無（S2 706 )， 對於差乃超出容許値，有放出量大的加熱區塊之情況，降 低其加熱區塊之加熱器電力（S2707 )，再次重複從S2702 之步驟。 另一方面，差乃超出容許量，判斷未有大的加熱區塊 之情況，接著檢查差乃超出容許量，檢查小的加熱區塊之 有無（S27 08 )，對於檢査差乃超出容許量，有判定爲小 之加熱區塊的情況，增加其加熱區塊之加熱電力（S2709 )，再次重複從S2 7 02之步驟。對於所有的加熱區塊，與 基準値的差乃判定爲容許範圍內之情況，係判定爲正常（ S2710)，結束操作》 201103998 然而，在以上的例中’顯示有2個成膜位置與掃描方 向爲並行之情況，但如圖2 5所示’ 2個成膜位置乃排列於 與蒸鍍源471之掃描方向（X方向）同一方向的情況’係於 成膜位置R與L之間’設置蒸鍍源71471之退避位置W»此 情況，如圖26所示’作爲於第二膜厚監視器420B側’設置 藉由真空旋轉導入機構429S ’與經由馬達424M所驅動之 滾動螺旋424P繫合之移動機構425，由以其移動機構425加 以支持之機械臂42 6’保持膜厚監視器42 0B之構成’經由 由馬達424M驅動滾動螺旋424P，將膜厚監視器420B，沿 著在待機位置W停止之蒸鍍源471加以移動之時，可監控 蒸鍍源471之噴嘴473各部的蒸發速率。在圖25及26，對於 與在圖23所說明之構成相同構件，將構件號碼作爲共通， 省略其說明。 在本實施例中’顯示過將基板作爲2片並行處理的例 ，但基板運入•出或基板與罩體之位置調整，較成膜時間 爲長之情況，作成3片以上之並列處理亦可。此情況，於 各成膜位置之間’設置第二膜厚監視器420B亦可》另外， 含有與蒸鍍源471—起移動’經常進行定點觀測之膜厚監 視器420A’當使用複數之膜厚監視器42〇A、420B時，有 必要進行各膜厚監視器間的校正，統—測定結果。對於此 ’設置於蒸鑛源471之退避位置w的膜厚監視器42〇A、 420B之中，將任一個作爲基準，進行校正即可。 將在此所求得之氣化的蒸鍍材料之放出速率之分度， 與實施例1同樣地’調整對於加熱器之供給電力，可將蒸 -51 - 201103998 鍍源471之噴嘴47 3之長度方向或配列方向的氣化之蒸鍍材 料471Z之放出速率之分布乃呈降低地加以控制，以及可活 用於觀測噴嘴堵塞等之判斷材料或品質管理。 本發明係可以其他形式予以具體化而不會背離其精神 與實質特質特徵。本實施例因此在所有方面將被視爲例示 而非限制之用’本發明的範圍係由以下請求項所指而不是 上述的說明’以及屬於該等請求項的等效物的意涵與範圍 內之所有變化因此被預期涵蓋於其中。 【圖式簡單說明】 圖1乃顯示有機電激發光裝置製造裝置之槪略構成圖 〇 圖2乃說明在本發明之第1實施例之運送室與處理室之 構成的模式圖與動作的圖。 圖3乃顯示遮蔽罩的圖。 圖4乃顯示在本發明之第1實施例之蒸鍍源與基板及膜 厚監視器之位置關係的圖。 圖5乃顯示在本發明之第1實施例之蒸鍍源，膜厚監視 器及開閉器之位置關係的圖。 圖6乃顯示膜厚監視器之輸出的例之圖表。 圖7乃說明在本發明之第1實施例之基板的蒸鍍處理之 動作的流程圖。 圖8乃說明在本發明之第2實施例之運送室與處理室之 構成的模式圖與動作的圖。 -52- 201103998 圖9乃顯示在本發明之第2實施例之蒸鍍源與基板及膜 厚監視器之位置關係的圖。 圖10乃說明在本發明之第2實施例之左右的蒸鍍位置 與蒸鍍源與基板及膜厚監視器之位置關係的圖。 圖11乃說明在本發明之第2實施例之基板的蒸鍍處理 之動作的流程圖。 圖12乃說明在本發明之第3實施例之運送室與處理室 之構成的模式圖與動作的圖。 圖13乃顯示在本發明之第3實施例之群組形成膜裝置 之處理室內部的構成，及檢測蒸鍍源之各噴嘴的蒸鍍材料 氣體之放出狀態的手段之槪略構成斜視圖。 圖14乃顯示在本發明之第3實施例，具有配置於蒸鏟 源之線上的噴嘴之蒸鍍源之噴嘴形態的例圖。 圖1 5乃說明在本發明之第3實施例，檢測蒸鍍源之各 噴嘴的蒸鍍材料氣體之放出狀態的手段之槪略構成剖面圖 〇 圖1 6乃顯示在本發明之第3實施例，由檢測各噴嘴的 蒸鍍材料氣體之放出狀態的手段所得到之檢測結果的例。 在以遮蔽板圍繞膜厚監視器的周圍的例，將顯示正常的情 況與異常的情況的例之圖表，顯示附上與加熱器對應的圖 〇 圖1 7乃顯示在本發明之第3實施例，由檢測各噴嘴的 蒸鍍材料氣體之放出狀態的手段所得到之檢測結果的例。 在未以遮蔽板圍繞膜厚監視器的周圍的例，將顯示正常的 -53- 201103998 情況與異常的情況的例之圖表，顯示附上與加熱器對應的 圖。 圖1 8乃顯示從在本發明之第3實施例，檢測各噴嘴的 蒸鍍材料氣體之放出狀態的手段所得到之資訊，進行加熱 器控制之情況的動作流程圖。顯示膜厚監視器側乃移動檢 測各噴嘴的蒸鍍材料氣體之放出狀態的例。 圖1 9乃將顯示在本發明之第3實施例，由檢測蒸鍍源 之噴嘴爲孔狀情況與縫隙狀之情況的各噴嘴的蒸鍍材料氣 φ 體之放出狀態的手段所得到之檢測結果的例圖表，顯示附 上與加熱器對應的圖。 圖20乃顯示從在本發明之第3實施例，檢測各噴嘴的 蒸鍍材料氣體之放出狀態的手段所得到之資訊，檢測蒸鍍 源之噴嘴堵塞，輸出警報情況的動作流程的圖。顯示蒸鍍 源側乃移動檢測各噴嘴的蒸鍍材料氣體之放出狀態的例。 圖21乃顯示在本發明之第3實施例，顯示石英振盪器 交換時之構成方法的動作流程圖。 · 圖22乃顯示在本發明之第4實施例，進行對於保持成 水平狀態之基板而言之成膜情況的裝置構成之槪略構成方 塊圖。 圖23乃顯示在本發明之第4實施例，檢測進行對於保 持成水平狀態之基板而言之成膜情況的裝置構成之蒸鍍源 的移動，與蒸鏟源之各噴嘴的蒸鍍材料氣體之放出狀態的 手段關係斜視圖。在本圖中，於與基板排列方向直角方向 ，掃描蒸鍍源。 -54- 201103998 圖24乃顯示在本發明之第4實施例，檢測對於保持成 水平狀態之基板而言，於與基板排列方向直角方向，掃描 蒸鑛源’進行成膜之情況之蒸鍍源之各噴嘴的蒸鍍材料氣 體之放出狀態的手段的平面圖。 圖25乃顯示在本發明之第4實施例之變形例，檢測進 行對於保持成水平狀態之基板而言之成膜的裝置構成之蒸 鍍源的移動’與蒸鍍源之各噴嘴的蒸鍍材料氣體之放出狀 態的手段關係斜視圖。在本圖中，於與基板排列方向同一 方向，掃描蒸鍍源。 圖26乃顯示在本發明之第4實施例之變形例，檢測對 於保持成水平狀態之基板而言，於基板排列方向，掃描蒸 鍍源，進行成膜之情況之蒸鍍源之各噴嘴的蒸鍍材料氣體 之放出狀態的手段的平面圖。 圖27乃顯示從在本發明之第4實施例，檢測各噴嘴的 蒸鍍材料氣體之放出狀態的手段所得到之資訊，進行加熱 器控制之情況的動作流程圖。顯示蒸鍍源側乃移動檢測各 噴嘴的蒸鏟材料氣體之放出狀態的例。 【主要元件符號說明】 1〇〇:有機電激發光裝置製造裝置 1，201，301a-l~f-2，401 ：處理室 2a〜d，202，302a~c ··運送室 3 :承載群組 4a〜e，3 04a~e :收授室 -55- 201103998 5a~d， 305a， 6 ， 6R ， 61 ， 8 R :校準部 10， 310：閘 20 ， 220 ， 31 24 ， 276 ：驅 26 ， 326 :石 2 8 :檢測面 40 :真空內画 4 1 :第1鏈環 42 :第2鏈環 50 ， 250 :控 7 1 :蒸鍍源音I 71 a〜η，3 7 1， 7 1 S :溫度感 7 1 Η :加熱器 71Ζ :蒸鍍材 72 :上下驅動 72C :旋轉部 72Μ，492Μ， 73a〜η ， 373 ， 75 ， 275 ：導 74，274L ： II 76P ， 492P ： 405 :運送機械手臂 62 :基板 閥 9 :膜厚監視器 動部 英振盪器 3線、配管機構 制裝置 471 :蒸鍍源 測器 料 !]部 424M:驅動馬達 4 7 3 :噴嘴 軌 I閉器 滾動螺旋 -56- 201103998 76 :導軸 81 ， 81R， 381 ， 481 :遮蔽罩 8 1 Μ，3 73 :罩體 82，282 :基板保持手段 83，83R:校準驅動部 6Α，81Α，84:校準標記 85 :窗 φ 93 :基板旋轉手段 94，3 5 2a :梳狀手部 271 :蒸發部 331a:加載互鎖真空室 351 :運送機械臂 371Z > 375 > 471Z ：蒸鍍材料 3 72，425 :移動機構 3 7 2 P :螺帽 • 372S，429S:真空旋轉導入機構 3 7 8，47 8B :蒸鍍源基座 387 :吊鉤 48 9 :線性導軌 4 9 0 :導銷 420A :第一膜厚監視器 420B :第二膜厚監視器 -57-® shows the construction of the shield 81 in FIG. The shield 81 is configured to include a cover body 81M' housing 8 1 F. The calibration mark detecting means (not shown) detects the position of the alignment mark 84 formed on the substrate and the position of the window 85 of the mask 8 1 to be fixed to the calibration driving portion 83 of the substrate holding means 82, and is formed in The window 85 (see FIG. 2) of the cover 81M is adjusted in position to a calibration mark 84 formed on the substrate 6. Fig. 4 is a view showing the relationship between the vapor deposition source portion 71 and the substrate 6 and the shield cover 8 1 which are held perpendicular to each other via the substrate holding means 82. Fig. 4(b) is a view taken from the direction of arrow B in Fig. 4(a). -11 - 201103998 The upper and lower drive means 72 moves the vapor deposition source unit 71 to the vertical direction along the pair of guide shafts 76, and includes a drive motor 72M provided on the atmosphere side and rotated by the same drive motor 72M. Driven, vacuum-sealed to the rotating portion 72C of the sealing portion 72S provided on the wall surface lbuw of the processing chamber lbu, fixed to the rotating portion 72C, rolled by the rotating screw 72P in synchronization with the rotating portion 72C, and fixed to the vapor deposition source portion 71 via the rolling spiral When the 72P is rotated, the vapor deposition source unit 71 performs the upper and lower nuts 72K, and in the above-described vertical direction, the guide 72G that guides the pair of the guide shafts 76 of the pair of vapor deposition source units 71 is guided. The pair of guide shafts 76 have one end supported by the wall surface lbuw of the processing chamber lbu and the other end supported by the support plate 78. The vapor deposition source portion 71 has n vapor deposition sources 71a to n (the number η is determined in accordance with the width direction of the substrate 6 and η also includes 1), and each vapor deposition source 7 1 a to η The heater 7 1 Η having the vapor deposition material 7 1 收纳 stored therein is externally heated, and the temperature sensor 7 1 S 'the control device 50 for detecting the evaporation temperature is monitored by the temperature. The sensor 7 1 S detects the output of the evaporation temperature to obtain a specific vapor deposition rate, and controls the heater 7 1 Η . In addition to the temperature-controlled evaporation rate, the output of the heater 71 can be directly controlled based on the amount of vaporization of the vapor-deposited material 7 1 检测 detected by the film thickness monitor 20. As shown in the guide diagram of Fig. 2, the vapor deposition source portion 71 is linearly arranged with nozzles 73a to n corresponding to the vapor deposition sources 71a to n, and the vapor deposition material 71Z heated and vaporized. The nozzles 73a to η are discharged to the inside of the processing chamber lbu, and the surface of the substrate 6 that is perpendicular to the vapor deposition source portion 71 is plated in a vapor-elevating manner. The mentioner is the steaming of the ore, which is necessary to make the root material ο agent key steam mixed with its heat so that the 81 can be covered with the cover and cover the mask of the nature of the special -12- 201103998 The plurality of vapor deposition sources may be arranged in parallel with each of the vapor deposition sources 71a to η. The vacuum inner wiring and the piping mechanism 40 has a hollow first link 41 that is rotatable at one end in the wall surface lbuw of the processing chamber lbu, and is fixed in a state of being opened to the atmosphere, and one end is rotatably connected to one end. The other end of the first link 41 is a link structure in which the other end is a rotatably fixed hollow second link 42. For the hollow link, a wiring 44 for the power line of the heater 7 1 , and the signal line of the temperature sensor 7 1 S is applied. In the vacuum inner wiring and the piping mechanism 40, when the two links 41 and 42 are rotated in response to the movement of the vapor deposition source unit 71 in the vertical direction, the wiring of the signal line and the power supply line can be stably maintained at the destination. State. In such a configuration, as shown in FIG. 5, the vapor deposition source portion 71 is opened at the standby position WSL at the lower end before the vacuum deposition is started, and the shutter 74 is opened (the switching mechanism of the shutter 74 is omitted), and is mounted on the edge. The film thickness monitor 20 of the support body 25, which is movable by the horizontal direction guides 21 supported by the support members 22 ® and 23, is driven by the driving portion 24 along the vapor deposition source portion 71 arranged in a line shape. The nozzles 73 a to n of the plurality of vapor deposition sources 71 a to n are moved (scanned) at a constant speed, the amount of evaporation is monitored, and the signal monitored by the signals is transmitted to the control unit 50. The film thickness monitor 20 detects the film formation rate in accordance with the frequency change corresponding to the deposition amount of the film formation material attached to the quartz oscillator. The detection surface 28 of the film thickness monitor 20 is located in the same plane as the position of the -13-201103998 corresponding to the surface of the substrate 6 which is held perpendicular to the substrate holding means 82 for the vapor deposition source portion 71. (the same interval as the interval between the vapor deposition source portion 71 and the substrate 6) is provided as a vapor deposition source capable of detecting the vapor deposition rate (the thickness of the vapor deposited film per unit time) corresponding to the position of the surface of the substrate 6. The distribution of the length direction of the portion 71 (the arrangement direction of the nozzles 73a to η). The control unit 50 analyzes the deposition rate of the substrate surface position corresponding to the evaporation amount from each of the nozzles 73a to ri detected by the film thickness monitor 20, and checks the state of evaporation from each of the nozzles 73a to n, and compares them. In other cases, the nozzles with small detection signals can be specified, and the reference levels of the detection signal levels from all the nozzles are preset, and the excess amount of evaporation can be checked as shown in Fig. 6 (a) to (c). As an example of the signal detected by the film thickness monitor 20, the relationship between the position of the film thickness monitor 20 and the vapor deposition rate is displayed. Fig. 6(a) shows that at each position, the vapor deposition rate is constant and is between the upper limit 値Ru and the lower limit 値R 1 of the reference range, and in this case, the vapor deposition is normally performed. Fig. 6(b) shows the decrease in the vapor deposition rate from a certain position, and the decrease in the evaporation amount in the plural. This is an example in which the steam source 7 1 a-η is divided into a plurality of sections and is heated by the heater 7 1 Η in each section unit. In this case, if the temperature of the corresponding section is confirmed by the temperature sensor 7 1 S, the voltage applied to the heater 71A of the section heated is controlled, and the evaporation rate is in the above-mentioned reference range Ru and R 1 Adjust it between places. Further, Fig. 6(c) shows a state in which the evaporation amount from one of the plurality of vapor deposition sources 7A1 to η is lower than that of the other, such as a specific corresponding vapor deposition source 71Χ, whether or not the nozzle is investigated. Take the countermeasures for the cause of the blockage of the 73 or the abnormal temperature of the heating temperature. -14- 201103998 In the examples of Figs. 6(b) and (c), the abnormal state in which the vapor deposition rate is lower than the lower limit 値R1 is shown as an example, but the abnormality is that the vapor deposition rate is higher than the upper limit 値Ru. In the case of the state, the countermeasure can be performed in the same manner as described above. That is, according to the present embodiment, since the vapor deposition material which is vaporized from each of the nozzles 73a to n can be inspected to the inside of the processing chamber, the control of the more delicate vapor deposition rate can be improved, that is, the film formation is performed. The film thickness distribution of the film on the substrate is uniform. The film thickness monitor 20 scans the state in which the vapor deposition material vaporized by the vapor deposition sources 71a to η is discharged from the nozzles 73a to η to the inside of the processing chamber, and after confirming that there is no abnormality, the vertical driving means 72 is operated at a constant speed. The vapor deposition source portion 71 is raised, and the luminescent material is vapor-deposited by the mask 81 on the substrate 6 disposed on the opposite surface. The vapor deposition source portion 71 reaches the standby position WSu that has reached the rising end beyond the opposing substrate 6, and waits for the start of the evaporation of the next substrate while being covered by the shutter 75. In the present embodiment, since only the film thickness monitor 2 is placed on the standby position WSL of the lower end side of the vapor deposition source portion 71, the vapor deposition source portion 71 is from the standby position WSu at the rising end side. When the start of the descent, no monitoring of the amount of evaporation was performed. Fig. 7 is a flow chart showing the processing via the processing chamber 1 thus constructed. As a basic idea of the process of the present embodiment, the vapor deposition surface of the substrate is transported as the upper surface, and the substrate 6 transported thereon is vertically erected, transported to the aligning portion 8, and vapor-deposited. When the substrate 6 is transported, the surface of the substrate 6 is a vapor-deposited surface. It is necessary to reverse the surface. However, the upper surface is the vapor-deposited surface, and it is erected vertically, that is, -15-201103998. First, the substrate 6 is carried in (S701), the substrate ό is erected vertically, and moved to the aligning portion 8 (S7〇2), and the position of the substrate 6 and the mask 81 is adjusted (S703). At this time, the substrate 6 is formed by placing the vapor deposition surface on the upper surface, and the position can be adjusted immediately when it is erected vertically. The position adjustment is as shown in the guide diagram of FIG. 2 'photographed by a CCD camera (not shown), and the calibration mark 84 provided on the substrate 6 is present at the center of the window 85 provided in the reticle 8 [M] This is performed by controlling the mask 8 1 with the aforementioned calibration drive unit 83. The size of the window 85 is, for example, a width of 50 " m and a height of 150 / zm. The thickness of the cover 81M is 4 〇 em, and tends to be thinner in the future. The vapor deposition source portion 71 is transported between the substrates 6 and is evacuated to the standby position WS1 at the lower end, and the nozzles 73a to η are covered by the shutter 74. Next, when the position adjustment of the substrate 6 is started, the shutter 74 is turned on (S704), and the vapor deposition material evaporated from the vapor deposition sources 71a to η is discharged from the respective nozzles 73a to n to the inside of the processing chamber 1. In this state, the film thickness monitor 20 starts scanning along the respective nozzles 73a to η (S7 05), monitors the vapor deposition rate at each position corresponding to the surface of the substrate 6, and detects the discharge from each of the nozzles 73a to n. The vaporized material is vaporized to the inside of the processing chamber (S706). When the scanning of the film thickness monitor 20 is completed (S707), the control unit 50 checks the steaming rates (S7 08) of the respective nozzles 73a to n and the whole, and the cause of the abnormality is the nozzle 73a~ The occlusion of η or the applied voltage abnormality of the heater 71 (S 709 ) 'When the applied voltage of the heater 7 1 异常 is abnormal, the applied voltage is fed back to the heater 7 1 ( (S710), and the process returns to S705 and starts again. The film thickness monitor moves. On the other hand, in the case of the clogging of the nozzles 73a to η, an alarm notification exception is issued (S711). After the inspection of the evaporation amount from each nozzle 73 via the film thickness monitor 20 and the adjustment of the position of the mask 81 and the substrate 6 are completed, the shutter 74 is closed (S712), and the upper and lower driving means 72 are driven to start steaming. The plating source portion 71 is moved upward (S713), and the vapor deposition source portion 71 is moved at a constant speed, and the evaporated vapor deposition material 71Z is discharged from the respective nozzles 7 3 a to η to the inside of the processing chamber 1 to be unwound. The mask 81 is vapor-deposited onto the substrate to form a film (S714). When the vapor deposition source portion 71 reaches the upper end, the rise of the vapor deposition source portion 71 is stopped (S715), and when the vapor deposition of the substrate 6 is completed, the nozzles of the vapor deposition source portion 71 are at the standby position WSu at the rising end. 73 a to η are in a state of being covered by the shutter 75, and are waited until the vapor deposition of the next substrate is started. Next, the substrate 6 is carried out from the processing chamber 1 (S716), waiting for the next new substrate 6' to be carried in. Then, the new substrate 6' is carried in (S717), the new substrate 6' is held vertically (S718), and when the position adjustment of the mask is completed (S719), the upper and lower driving means 72 are driven to start steaming. The movement under the plating source portion 7 1 (S720) moves the vapor deposition source portion 71 at a constant speed, and evaporates the evaporated material 71Z from the respective nozzles 73a to η to the inside of the processing chamber 1, and unwinds The mask 81 is vapor-deposited onto the substrate to form a film (S721). When the vapor deposition source portion 71 reaches the lower end, the lowering of the vapor deposition source portion 7 1 is stopped (S 722), the vapor deposition of the new substrate 6' is completed, and the vapor-deposited substrate 6' is carried out (S723). Here, at the time of starting the vapor deposition of the new substrate 6', the vapor deposition source portion 71 is located on the rising end side, and the rising end side is not provided with the film thickness -17-201103998 monitor 20, and thus is not performed. The evaporation source portion 71 starts monitoring the amount of evaporation from each of the nozzles 73a to n before the start of the lowering. That is, the processing of the corresponding flow up to (S7 04) to (S711) is not performed. Thereafter, the above-described flow is repeated. According to the embodiment described above, the vapor deposition rate distribution in the arrangement direction of the nozzles 73a-n of the vapor deposition source portion 71 is monitored on the surface of the substrate 6, and the respective nozzles 73a to η are adjusted. When the amount of the vapor deposition material is released, it is possible to provide a device for manufacturing an organic electroluminescence device having uniform film thickness distribution and high reliability. The above embodiment has been described for all cases in which the vapor deposition surface of the substrate 6 is transported as the upper surface. As a method of transporting another substrate, there is a method in which the vapor deposition surface is transported as a lower surface, and the substrate is placed in a container or the like and transported upright. However, the idea of detecting the distribution of the vapor deposition rate at the position corresponding to the surface of the substrate and adjusting the amount of deposition of the vapor deposition material discharged from each nozzle of the vapor deposition source is irrelevant to the transportation method, regardless of the method of transportation. The present invention is applicable to the method of transportation. Further, in the above description, the organic electroluminescence device has been described by way of example, but it is also applicable to a film formation apparatus and a film formation method which perform vapor deposition treatment in the same background as the organic electroluminescence device. [Embodiment 2] In the first embodiment, an example in which the substrate 6 is processed in one processing chamber in the processing chamber 1bu for performing vacuum distillation is described. However, in the second embodiment, for the 201103998, the processing chamber Ibu is used. In the inside, one pair of substrate holding means 82 is provided, and between the substrates held by one of the substrate holding means 82R, and the other substrate holding means 82L are placed, and other substrates are placed to complete the position adjustment of the shield 81 and the substrate 6. The composition of the amount of transmission of the lifting device will be described. In the second embodiment, the difference from the first embodiment is inside the processing chamber lbu, and the shield cover 81, the substrate holding means 82, the comb-shaped hand 94, and the substrate rotating means 93 are provided on the right side R line and The point formed by the 2 systems of the L line on the left side. The description of the portions overlapping with the first embodiment will be omitted, and the differences from the first embodiment will be described. Fig. 8 is a view showing the constitution of the transport chamber and the processing chamber according to the second embodiment. . The composition of the processing chamber varies depending on the processing content. However, a processing chamber 1bu (in the second embodiment, referred to as a processing chamber 20 1 in the second embodiment) in which a light-emitting material is vacuum-deposited to form an electroluminescent layer will be described as an example. The transport robot 205 provided inside the transport chamber 022 has a mechanical arm 251' having a left-right rotation structure, and a comb-shaped hand 252 for transporting the substrate is attached to the front end thereof. For the interior of the processing chamber 201, The system has roughly: The luminescent material is evaporated and evaporated on the vapor deposition source portion 71 of the substrate 6, And the vapor deposition source portion η' is driven in the vertical direction above and below the driving portion 76 in parallel with the substrate 6 along the substrate 6' held perpendicularly via the substrate holding means 82R or 82L. And the necessary part of the substrate 6, a mask 81 for evaporating the luminescent material, And a comb-shaped hand 94 for receiving the S-plate 6' between the transport robots 5, And -19-201103998 rotating the substrate 6 received by the comb-shaped hand 94 to move it upright' to the substrate rotating means 93 of the substrate holding means 82, The driving portion 276 of the vapor deposition source portion 71 is moved along the rail 275 between the L line and the R line. And 'for vacuum evaporation, The vacuum system is maintained at a vacuum level of 10 - 3 to 10 -4 Pa by a vacuum exhaust pump (not shown). however, In Figure 8, Although omitted, However, the transfer chamber 202 and the process chamber 201 are separated by a gate valve 1 that is openable and closed. Fig. 9 is a view showing the relationship between the vapor deposition source portion 271 and the substrate 6 and the shield cover 81 which are held perpendicular to each other via the substrate holding means 282. Figure 9 (b) is in Figure 9 (a), A view from the direction of arrow B. The vapor deposition source portion 71 is connected to the upper and lower driving means 72. The upper and lower directions are moved along the pair of guide shafts 76. In addition, As shown in Figure 10, The steam source unit 7 1 is driven by left and right driving means. Moving along the track 75 between the left and right aligning portions L and R" in the middle of the moving path between the aligning portions L and R on the right and left sides of the evaporation portion 271, The system is provided with a film thickness monitor 22 0, The detection surface 221 of the film thickness monitor 220 is set in the same plane as the surface of the substrate 6 which is held perpendicular to the substrate holding means 82R or 82L. Driven by the left and right drive means 2 7 6 , Along the track 275, At a certain speed, When the steam source portion 71 moves between the left and right calibration portions L and R, Each of the nozzles 73a to n of the vapor deposition sources 71a to η arranged in a line shape passes through the front of the film thickness monitor 220. The amount of evaporation from each of the nozzles 73a to η is a change in film thickness. Detected by the film thickness monitor 220, The signal it detects, It is transmitted to the control unit 25 0. In the control unit 250, The detection signal corresponding to the evaporation amount from each of the nozzles 7 3 a to n measured by the film thickness monitor 220, 201103998 is analyzed, Check the state of evaporation from each nozzle 7 3 a~n, Compared to others, A nozzle 73 having a small detection signal can be specified, And comparing with a reference level that presets the detection signal level from all of the nozzles 73, You can check the excess amount of vapor deposition. For the control unit 250 to be specific to the other, Detecting the case of a small nozzle 73x, At the position of the nozzle 73x of the vapor deposition source portion 71, Output to display means (not shown). • In addition, For comparison with the reference range of the detection signal level preset in all the nozzles 73, When the evaporation rate is outside the reference range, Control unit 25 0, Simultaneously monitoring the signal obtained by the temperature sensor 71 S to obtain the evaporation temperature, Controlling the voltage drop of the heater 7 1 蒸 of the vapor deposition source portion 7 1 , When the evaporation amount is below the reference range, By the control unit 50, Simultaneously monitoring the signal obtained by detecting the vaporization temperature via the temperature sensor 7 1 S, The control of increasing the applied voltage of the heater 71 of the vapor deposition source portion 71 is performed. ® In addition, In the configuration shown in FIG. 9(b), By dividing the evaporation source 7 la η into a plurality of sections, When the heater 71 is heated in each section and the temperature sensor 71S detecting the evaporation temperature is set, Comparing with a reference range in which the detection signal levels from the respective nozzles 73a to η are preset, When the evaporation exceeds the reference range, Via the control unit 2 50, In each interval, Monitoring the signal of the evaporating temperature detected by the temperature sensor 7 1 S of each section while controlling the applied voltage of the heater 7 1 各 of each section, More fine control of the evaporation amount distribution can be performed. And, The detection signal level -21 - 201103998 of each of the nozzles 73 a to n from the monitoring is a condition that exceeds a predetermined reference level or decreases from a predetermined reference level. The control unit 2 50 can issue an alarm, The abnormality of the notification device is constituted by the practitioner. which is, As in the present embodiment, In the first embodiment, In the same manner as described with reference to Figs. 6(a) to (c), Check the evaporation state of each nozzle 7 3 a~n, Improves the control of the more delicate evaporation rate, which is, The film thickness distribution of the film formed on the substrate is uniform. Fig. 11 is a flow chart showing the processing of the processing chamber 1 of the second embodiment. As the basic idea of the processing in this embodiment, As in the case of the first embodiment, The vapor deposition surface of the substrate is transported as the upper surface. The substrate 6 transported above is erected vertically, Shipped to the calibration unit 8, Perform evaporation. The bottom surface of the substrate 6 during transport is as a vapor deposition surface. It is necessary to reverse, But the above is the reason for the evaporation surface, Just stand upright and stand upright. In addition, In this embodiment, For the time required for the evaporation process, And the time required to carry the calibration into the substrate 6 to the processing chamber 1 is slightly the same. In the present embodiment, each is about 1 minute. therefore, As a basic idea in this embodiment, Between the vapor deposition on one of the lines, In the other line, Carrying out the finished substrate and transporting it into a new substrate, Make position adjustments, When the preparation for evaporation is completed, when this process is performed interactively, It can shorten the standby time of the evaporation source. Reduces the amount of material that is not consumed during standby. Describe in detail the processing flow. First of all, In the R line, Transported into the substrate 6R (S1101R), The substrate 6R is erected vertically, Move to the calibration section 8R (S1102R), The position adjustment of the substrate 6 and the mask 81 is performed (S1103R). at this time, To adjust the position immediately to stand upright, On the other hand, the vapor deposition surface -22-201103998 is used as the upper surface to transport the substrate 6. The position adjustment is shown in the guide diagram of Figure 8. Photographed by a photographic camera (not shown) such as a CCD camera, The alignment mark 84 provided on the substrate 6 is present at the center of the window 85 provided in the shield 81R. Via the mask 81R, This is performed when the above-described calibration drive unit 83R performs control. This vapor deposition is a material that emits light into red (R). As shown in Figure 3, In the portion corresponding to the R of the cover 81M of the shield 81R, Open a window, The substrate 6 is a portion where vapor deposition is located under the window. The size of this window is, for example, 5 〇/zm in width. The height is 150/zm. The thickness of the cover 81M is 40/zm, There is a tendency to become thinner in the future. After the position adjustment is over, Stand by on the L line side, The vapor deposition source portion 71 covered by the shutter 274L, Driven by the left and right driving means 2 76, Move along the track 2 7 5 to the R line side (S 1 1 0 1 E. )at this time, The vapor deposition source portion 71 moves between the L line side and the R line side at a constant speed. At a position away from the shutter 274L, When each of the nozzles 73 arranged in the line shape of the steamer source 71a to n passes through the front of the film thickness monitor 220, The amount of evaporation from each of the nozzles 73a to n is a change in film thickness. That is, as the evaporation rate, Detected by the film thickness monitor 220 (S 1 1 02E ), The signal of this detection, It is transmitted to the control unit 25 0. After the end of the movement on the R line side of the vapor deposition source portion 71 (S11 03 E), The control unit 250 checks whether or not there is an abnormality (S 1 1 04E ) for the evaporation amounts of the respective nozzles 73a to n and the whole, For unusual situations, The reason for the determination is that the nozzles 73a to η are blocked or the applied voltage of the heater 71H is abnormal (whether or not the heater 71 can be controlled by the heater) (S1105E), In the case where the voltage applied to the heater 71 is abnormal, The feedback voltage is applied to the heater 7 1 ( ( -23- 201103998 SI 106E ), Will vaporize the source, Once moved from the R line side to the L line (SI 107E ), The step of returning to S1 101 E again 'starts moving the vapor deposition source from the L line side to the R line. on the other hand, For the case where the nozzles 73a to η are blocked, An alarm notification exception is issued (S1108E). The position adjustment of the mask 8 1 and the substrate 6R is finished. The inspection of the evaporation amount from each of the nozzles 73 a to n via the film thickness monitor 220 is completed. In the standby position on the R line side, Each of the nozzles 7 3 a to n of the vapor deposition source portion 7 1 is covered by the shutter 2 7 411. At 31,104, it is judged that there is no abnormal evaporation rate. Driven by the up and down driving means 72, Start to continuously move the vapor deposition source portion 71 to the upper side (S1104R). At a position away from the shutter 274R, Evaporating material 71Z to be evaporated, It is discharged from the respective nozzles 73a to η to the inside of the processing chamber 1, Deposited on the substrate 6R by the mask 81, A film (S1105R) is formed. The evaporation source portion 71 reaches the upper end of the pair of tracks 276, When the evaporation of the substrate 6R is completed, Stopping the movement above the vapor deposition source portion 71 (S1106R), At the upper end of the pair of guide shafts 76R, Each of the nozzles 73 a to n of the vapor deposition source unit 71 is in a state of being covered by the shutter 275R. on the other hand, On the R line, On the substrate 6R, In evaporation, In the L line, The same processing as (S1101R) to (S1103R) from the R line is performed. which is, Shipped into other substrates 6L (SI 101L), The substrate 6L is erected vertically and moved to the calibration portion SL (S1102L). The position adjustment with the mask 81L is performed (S1103L). Finishing the evaporation of the substrate 6R of the R line, The steam source portion 71 that waits at the upper end portion of the pair of guide shafts 76 confirms whether or not the position adjustment of the substrate 6L and the calibration portion 8L is completed. Driven by the drive unit 2 76, Move along the track 2 75 -24- 201103998 to the L line side (SI 1〇8Ε), The front surface (the surface on which the nozzles 73a to n are provided) is covered by the shutter 275L. here, When moving from the R line side to the L line side, The vapor deposition source portion 7 is held by the upper end portion of the pair of guide shafts 76, The inspection of the evaporation amount from each of the nozzles 73a to n via the film thickness monitor 220 is not performed. In addition, The shutters 275R and 275L are not separated. It can also be formed by a continuous body. In this case, The vapor deposition source portion 71 is a surface (front surface) on which the respective nozzles 73a to iv are provided. The state covered by the shutter, Moving from the R line side to the L line side" Next, The vapor deposition source portion 71 that has reached the L line side is driven by the vertical driving means 7 2 . Start moving to the bottom (S 1 1 0 4 L ), The evaporation material 71Z to be evaporated from the coating passing through the shutter 275L, It is discharged from the respective nozzles 73a to η to the inside of the processing chamber 1, It is evaporated on the substrate 6L by the mask 81, Forming a film (S1105L), The vapor deposition source portion 71 reaches the vicinity of the lower end of the pair of rails 276. When the evaporation of the substrate 6L is completed, The movement to the lower side of the vapor deposition source portion 71 is stopped (S1106L), At the lower end of the pair of guide shafts 76, Each of the nozzles 73a to nn of the vapor deposition source unit 71 is in a state of being covered by the shutter 274L. on the other hand, In the R line, It is confirmed whether or not the vapor deposition source portion 71 has finished moving to the L line side. The carry-out operation from the processing chamber 1 of the substrate 6R is started (S1107R). Then transported to the new base 6R' (S1108R), The base 6R' is erected vertically and moved to the aligning portion 8R (S110 9R), The position adjustment of the substrate 6R' and the mask 81R is performed (S1110R). after that, Repeat the above process. As in the present embodiment, In addition to the moving time of the evaporation source portion 71, Unused use of vapor deposition material 7 1 Z, And -25-201103998 can form a vapor deposited film on the substrate." In this embodiment, If the necessary evaporation time and the time for the substrate of the processing chamber are released and calibrated, As about 1 minute, The moving time of the vapor deposition source portion 7 1 is taken as 5 seconds. In a way where only one substrate can be mounted, For the case where the useless evaporation time for the evaporation of the substrate is not 1 minute, In this embodiment, Can be shortened to 5 seconds. In addition, As in the above embodiment according to the above, As shown in Figure 11, The processing cycle of the substrate 6 in the processing chamber 1 is substantially the time during which the vapor deposition time and the moving time of the vapor deposition source portion 71 are substantially added. Improve productivity. If the processing time is evaluated by the aforementioned conditions, For 2 minutes of the way in which only one substrate can be mounted, In the present invention, it becomes 1 minute and 5 seconds, It can be equivalent to the productivity of the processing chamber 1, Increased by about 2 times. [Embodiment 3] In Embodiments 1 to 3, For embodiments that combine horizontal transport and vertical film formation that are advantageous for processing large substrates, Has been explained, But in the following, It is shown in the form of a combination of horizontal transport and horizontal film formation used for film formation of a medium-sized raft. Figure 1 2 shows the horizontal transport of the present invention, Further, an example of the configuration of the organic electroluminescent device manufacturing apparatus 300 for horizontal film formation is shown. The device configuration is used as a general group device. For the well-known composition, For its composition, The example of the present invention is shown in the following. The organic electroluminescent device manufacturing apparatus 300 of Fig. 12 is for the transport chambers 302a to c located at the center of the polygon. Around it, The connection has a -26- 201103998 interlocking vacuum chamber 331a, The configuration of the device 304a to c or the processing chambers 301a-l to f-2 is received. The transport room 3〇2 a~c is tied in the center, The transport robot arms 305a-c are configured. The transport robot arms 305a-c are taken out of the substrate 61 placed in the load lock chamber 331a or the receiving chambers 340a-c or the processing chambers 301a-l~f-2. A new additional substrate 61 is placed. The reception rooms 304 a to c are used to carry out the reception of the substrate 61 between adjacent groups. In the processing chamber 301 a-Ι~f-2, For processing the substrate 61, A film formation process by vacuum evaporation is performed. For each room that forms a group, Provided with a gate valve 310, The vacuum can be maintained in each chamber. In the load lock vacuum chamber 331, With a closed gate valve 310, The environment in which the substrate 61 will be carried, Switch from atmospheric pressure to vacuum, Or switch from vacuum to atmospheric pressure. In the film forming process, Each of the processing chambers 30 la-Ι to f-2 and the respective transport chambers 312a to c are maintained at a vacuum of 10 - 3 to 10 - 5 Pa via a vacuum pump (not shown). When the gate valve 310 provided in the process chambers 301a-1 to f-2 is closed, In the film forming process, the gas generated in each of the processing chambers 301a-1 to f-2 can be prevented. The purity of the film produced by the time of propagation to the other processing chambers 301a-1 to f-2 is lowered. Also for maintenance, a specific film forming chamber 301a-l~f-2 or a transport chamber 3 0 2 a~c, Individually made open to the atmosphere, The process 301a-l for which the time required to recover the state of the entire device 300 after maintenance is suppressed to the minimum of the processing chambers 3 0 1 a-1 to f-2 is such that the organic layer is formed into a film. An example is given. 13 is a summary of the internal structures of the transport chambers 3〇2a to c and the processing -27-201103998 chambers 301a-l to f-2 according to the third embodiment. An example of the transport chamber 032a and the processing chamber 301a-1 will be described. As shown in Figure 13. In this embodiment, In addition to the film thickness monitor 3 1 9 of the vapor deposition source 317 Above the evaporation source 3 7 1 , A film thickness monitor 320 that scans the length of the vapor deposition source 371 on the line is provided. The transport robot 3 05a disposed inside the transport chamber 030a has a robot arm 351a that is rotatable and telescopic. The comb-shaped hand 352a for transporting the front end mounting substrate is used. on the other hand, For the processing chambers 301a-l, There is a receiving mechanism for receiving the substrate 61 from the transport robot arm 305a. Mask 381, a calibration mechanism of the mask 381 and the substrate 61, Heating the organic vapor deposition material at a high temperature to vaporize it, The airflow 375 having the directivity forming the vapor deposition material 371Z, The vapor deposition source 371 is formed by being sprayed under the substrate 61 to form a film. From the transport robot arm 305a to the substrate 61 to the film forming chamber 301a-1, On the hook 387, Inserting the comb-shaped hand 352 of the holding substrate 61, Lowering the transport arm 351, Delivering the substrate 61 to the hook 387 disposed at the peripheral portion of the substrate, The comb-shaped hand 352 is retracted. When the comb-shaped hand 352 is inserted, Raise the hook 387, It is also acceptable to accept the substrate. When receiving the substrate 6, Lower the hook 3 87, In a state of approaching the substrate 6 1 and the mask 3 8 1 , Optically detecting the alignment mark 6A on the substrate and the alignment mark 381A on the mask, Make the hook 3 8 7 or the mask 381 nudge, Make position adjustments. After the position adjustment is over, Lowering the hook 387, On the mask 381, The substrate 61 is placed. And the hook 3 8 7 is retracted. Pull out, They are spaced from the mask 381. at this time, On the mask 381, When there is a ditch in the hook 387, Increase the thickness of the claws of the hook 387 201103998, It becomes easy to correspond to the large substrate 61. The mask 381 is provided with a cover 381M, Frame 381F, A calibration mark 381A is formed. The vapor deposition source 371 is in the direction of the gas 375 from which the vapor deposition material 371Z is ejected. The nozzle 373 of the discharge port of the gas flow 375 in the form of a rod-like source extending in the vertical direction is the length direction of the vapor deposition source 371. Set up on the line to make multiple settings. This nozzle is not a circle or a hole 'arranged on a line as shown in Fig. 14(a)(b) but one or a plurality of slits as shown in Fig. 14(c)(d). other, As shown in Figure 14(f), For the nozzles 3 73 from the centers of the steaming shovel sources 3 7 1 a to η provided in the small shape, The case where the vapor deposition source of the vapor deposition material is supplied in the form of the vapor deposition source 3 7 1 in the form of Prepare a plurality of small-sized vapor deposition sources 3 7 1 a~η, As arranged on the line, The same effect can be obtained. Each of the nozzles 373 of the vapor deposition sources 371 a to n is in a state of facing the substrate 61. Keep a certain interval, For the substrate 6 1 parallel, And for the length direction of the evaporation source 371, The vapor deposition source moving mechanism 3 72 is moved in a right angle direction by a round trip, Scan at a specific speed, For the entire face of the object to be the substrate 61, A film of an evaporation material is formed. Containing each transport room 3 02, Processing chamber 301, Transport robotic arm 305, Receiving room 304, The entire device 300 of the evaporation source 371, It is controlled by the control unit 350. The moving mechanism 372 of the vapor deposition source 371 is as shown in FIG. 13 and FIG. The evaporation source 371' is moved along a pair of rails 3 72 L, Via the drive motor 3 72M provided on the atmospheric side, The vapor deposition source 3 7 1 mounted on the vapor deposition source base 378 is moved. Providing a vacuum rotating introduction mechanism 372S having a magnetic fluid holding a vacuum degree sealed inside the wall surfaces 301a-lw of the processing chamber 301a-1, By -29 - 201103998 by its vacuum side of the rotating shaft, Rotate the rolling helix 3 72P. Both ends of the rotary rolling screw 372P are supported by a support plate 376 having bearings. For the evaporation source base 378 on which the evaporation source 371 is loaded, It is connected to the nut 372K of the rotating rolling screw 372P and the guiding member 3 72G which guides the walking on the pair of rails 3 72L, Via the rotation of the rotating rolling screw 3 72P, The vapor deposition source 3 7 1 is linearly moved along the guide rail 372L. It becomes a scan film that can be reciprocated. Using the mechanism shown above, For the substrate 61, After scanning and vaporizing the source 371 to scan the film, The evaporation source 371 is evacuated. The substrate 61, Peeled from the mask 381, Once again transported by the transport robot 3 05 a to the other processing chamber 301, A film formation process is performed. First of all, For the case where the substrate 61 is placed on the mask 381, The hook 387 is hung to raise the substrate 61. and, The transport robot 305 inserts the comb-shaped hand 352a into the lower portion of the substrate 61, and raises the robot arm 351a to the receiving substrate 61. Instead of causing the robot arm 351a to rise ', the hook 387 is lowered, It is also possible to separate the substrate 61 from the comb-shaped hand 3 5 2 a. In addition, after the substrate is hung by the hook 387, Having the function of raising the comb-shaped hand 3 52a of the transport robot arm 3 05 a, It is also possible to receive the substrate 61. Through the method shown above, In the case where the vapor deposited film is formed on the substrate 6 1 ' in order to ensure the uniformity of the film thickness, The temperature control of the evaporation direction of the evaporation source should not be lacking. As shown in Figure 15, The vapor deposition source 317 is heated in the heating control block 3 7 1 B divided into a plurality of length directions. Each heater 371H is provided for the heating control block 371B'. For the vapor deposition source 371, the canned pot 371C containing the vapor deposition material 371Z is housed. The crucible 371C is heated by the energization of the heater 371H, and the vapor deposition material immersed therein is 201103998 material 3 7 1 Z, And gasification. For the vapor deposition source, the thermal conductivity 371S has a temperature of detection, For the control device 350, the temperature output detected by the temperature sensor 371S, Control is performed at a specific processing temperature. The temperature sensor 37 1S can also be provided with a specific heating control block 371 B . Or each of them is disposed in any of the heating control blocks 371B. For the case where the temperature sensor is set in each heating control block 3 7 1 B, In the same temperature range in each heating control block, The power supply to the heater 371H is adjusted. In general, The end portion of the vapor deposition source 371 in the longitudinal direction causes heat radiation, Compared to the central department, The temperature is predicted to decrease. Therefore, Pre-compared to the center of the length direction of the vapor deposition source 371, By the multi-setting power supplier for the heater 371 加热 of the heating control block 371 B on both sides, The temperature of the entire steaming shovel source 371 is uniformized. In addition, In the case where the temperature sensor 3 7 1 S is provided in the specific heating control block 371, E.g, For the case where the temperature sensor 3 7 1 S is disposed in the heating control block 3 7 1 中央 in the center of the evaporation source 317, The heater in the central heating control block is 3 7 1 Η, On the side of the heater 3 7 1 , Only a certain proportion or a certain amount of power supply is required. The temperature uniformity of the length direction of the evaporation source 371 is generally In addition to the temperature-sensing temperature sensor 371S, The temperature sensor is mounted on each part of the steam source 371 for measurement. Based on the results, Addition and subtraction for each heater 371 电力 power supply increases the amount, Seeking uniformity of temperature. As a measure of the gas release rate, A film thickness monitor 320 of a quartz oscillator type 326 is used. This is for the quartz oscillator 326 which cools the gas stream 375 of the vaporized material 371 放 discharged from the evaporation source 371, On the quartz oscillator -31 - 201103998 3 2 6 detection surface, Forming a film of the vapor deposition material, The change in the number of quartz oscillation frequencies of the quartz oscillator 3 26 generated thereby, The film thickness of the vapor deposition material attached per unit time is read. usually, Film thickness monitor 3 20A, The B system is fixed to the end of the vapor deposition source 371 which is not hindered from film formation. Or the evaporation source 371 is moved to the retracted position W (in FIG. When there is a vapor deposition source 3 7 1) It is detectably fixed to the processing chamber 301 a-Ι side. In addition, Through the nozzle 3 7.3 of the vapor deposition source 371 and the film thickness monitor 320A, B quartz oscillator 326A1—3, Distance or inclination between B1-3, The directivity of the sensor, Dependence has its detection. In order to prevent the vapor deposition material from adhering to the quartz oscillator 326A1-3, Around B1-3, By the cover 31 9A, B is covered around, And, In order to directly measure the vapor deposition material discharged from the evaporation source 317, For the film thickness monitor 3 20B that monitors the amount of evaporation from each nozzle, The upper surface of the quartz oscillator 326 B1-3 is covered with a cylindrical magnetic shield 328. And, Because of each quartz oscillator 32 6A1—3, B1—3 has individual differences, Between the film thickness and the film thickness during scanning, Cannot be used if not corrected. For lifting film thickness monitor 320A, B film thickness measurement accuracy, Filming on the substrate 61 under specific conditions, After taking out the substrate, The result of measuring the film thickness from a measuring instrument such as an ellipsometer The process of calculating the correction factor is necessary. Since then, Via the film thickness monitor 3 20A, The number detected by B, When multiplying the correction factor, It becomes a distribution of the evaporation rate or evaporation rate of the vapor deposition material 3 7 1 Z which can be measured with high precision in real time. As an embodiment of the present invention, As shown in Figure 13. For the evaporation source 371, Fix the first film thickness monitor 32 0A, In evaporation, Move with the evaporation source -32- 201103998 371 In evaporation, The amount of evaporation from the evaporation source 371 is constantly monitored, The second film thickness monitor 320B is placed in the processing chamber 301a-1. The second film thickness monitor 320B is such that the gas flow 375 of the vapor deposition material 371Z does not reach the retracted position W of the vapor deposition source 371 of the substrate 61, The nozzle 373 facing the vapor deposition source 371 faces the quartz oscillator 3 26 (see Fig. 15). The second film thickness monitor 320B scans the moving mechanism 317 in the longitudinal direction of the vapor deposition source 371 during the evacuation by the vapor deposition source 371. The distribution of the vapor deposition rate of the vaporized vapor deposition material discharged from each nozzle 373 is set. Similarly to the reciprocating mechanism of the vapor deposition source 371, Two linear guides 321 are disposed on the side of the processing chamber 301a-1, It is made parallel to the column of the nozzle 321 of the evaporation source 371. And moving the second film thickness monitor 3 20B outside the processing chamber 301a-1 along the column of the nozzles 3 73, Set the motor 324M, Rotating a vacuum rotary introduction mechanism 324S having a magnetic fluid seal that maintains a vacuum density, A rolling screw 324P supported by a pair of support members 322 coupled thereto is rotated. The rolling screw nut 324K and the guide mechanism 3 25 of the linear guide are connected to the second film thickness monitor 320B. Via the rotation of the motor 324M, The second film thickness monitor 3 20B performs scanning measurement in the longitudinal direction of the vapor deposition source 371. in the past, After being formed on the substrate 61, In the length direction of the evaporation source 371, The film thickness on the substrate 6 1 is measured by a film thickness measuring machine or a step measuring machine. The film thickness is not different from the others, The heater 371H of each of the heating blocks 371B of the evaporation source 371 is adjusted. but, Since the distribution of the vapor deposition rate of the vaporized vapor deposition material 375 discharged from each nozzle 373 of the vapor deposition source 371 cannot be measured, Even if the singularity of the film thickness can be detected, It is not easy to judge the influence of the heating control of the B-33-201103998 block 3 7 1 B. It is difficult to adjust the uniformity of the film thickness. It takes a lot of time. on the other hand, Through the invention, As in the past, Frequently monitor the rate at which a particular portion of the vaporized vapor-deposited material is released, Not only the temperature control of the evaporation source 3 7 1 can be performed, The distribution of the discharge rate of the vapor deposition material discharged from each of the nozzles 3 7 3 of the vapor deposition source 317 can also be measured. therefore, According to the measurement of the distribution of the evaporation rate of the vapor deposition material discharged from each of the nozzles 73 of the vapor deposition source 371, Further adjusting the power supply state for the heater 3 7 1 中 in the heating control block 3 7 1 B of the heating evaporation source 317, It is also possible to control in accordance with a curve in which the vapor deposition material gas discharged from each nozzle 3 73 of the vapor deposition source 317 is released, or a desired release rate. Film thickness monitors 3 20 Α and 13 series in general, When an imminent temperature change occurs, Due to the measurement error, Water is often applied. but, When the scanning of the second film thickness monitor 320B is started, Suddenly receiving heat radiation from the evaporation source 37 1 It is easy to produce a measurement error via temperature change. Therefore, When I scanned the second film thickness monitor 3 20B, At the beginning of the flow of the vaporized material 3 75, Stop for a certain period of time, After the temperature is stabilized, the control of the drive mechanism 3 1 7 is changed by scanning the second film thickness monitor 3 20B. As such, The distribution of the deposition rate of the vapor deposition material which can be accurately measured in the longitudinal direction of the vapor deposition source 371 is scanned in the second film thickness monitor 320B. The gas stream 375 discharged from the adjacent nozzle 3 73 is incident on the quartz oscillator 326. When making the correct device diagnosis, It is difficult to accurately measure the discharge rate of the vaporized steam shovel material in a local range or in each of the nozzles. therefore, As shown in Figure 1 5 -34- 201103998, Around the quartz oscillator 326 of the second film thickness monitor 320B, Covered by a cylindrical magnetic shield 328, The second film thickness monitor 3 20B has directivity. the result, It is possible to exclude the gas flow 3 75 of the vapor deposition material incident from the inclined surface emitted from the adjacent nozzle, Can be more correctly in the nozzle 3 73 units, Or partial range, The discharge rate of the vaporized vapor-deposited material in the longitudinal direction of the vapor deposition source 371 was measured. An example of the above measurement results, Shown in Figure 16 (a) ~ (c). In this case, All of the nozzles 373 of the vapor deposition source 371 have the same rate of discharge of the same vapor deposition material. An example of a uniform film can be obtained for the substrate. When the periphery of the quartz oscillator 326 of the second film thickness monitor 320B is covered by the cylindrical magnetic shield 328, For the case where the nozzle 373 of the vapor deposition source 371 is in the shape of a hole, When the quartz oscillator 3 26 comes to the front of the nozzle, the rate of detection reaches a peak. Suitable to adjust the scanning speed, A few seconds after the start of the scan, If it is confirmed whether there is a quartz oscillator 326 passing through the front surface of the nozzle 3 73, It is possible to hold the peaks of the respective velocities corresponding to which of the nozzles 337. If it is normal, As shown in Figure 16 (a), The waveform of the same height can be measured repeatedly. The state in which the evaporation amount from the heating control block 371B is lowered is shown in Fig. 16 (b). In addition, Fig. 16(c) shows a state in which the discharge of one of the nozzles is blocked and the amount of the vapor deposition material is lowered. however, In the above embodiment, The premise of the arrangement of the nozzles 3 73 C as shown in Fig. 14 (a) or (b) is assumed. However, in the nozzle 3 73 S in the form of a groove as shown in Fig. 14 (c) or (d), The measured rate of the observed enthalpy becomes the graph shown in Fig. 17 (a) to (c). If it is normal, As shown in Figure 1 7 (a), Except for the end, A certain flaw is detected regardless of the position. -35- 201103998 On the other hand, For a portion of the heating control block, The supply of heater power is unpredictable, As shown in Figure 17 (b), For the film thickness monitor output corresponding to the position of the overheat control block where the defect occurs, There is a reduction in the rate of production. And, There is a blockage in one of the grooves 3 73 S of the evaporation source 371. As shown in Figure 17(c), In one part of the film thickness monitor output, There is a very small rate reduction. In addition, As shown in Figure 14 (e), The porous material 379 may also be coated on top of the steam source 371. The vapor deposition material discharged to the vacuum chamber side by the porous substance 3 79 is formed into a film. In the application example of the distribution measurement result of the vapor deposition rate of the vaporized vapor deposition material in the longitudinal direction or the alignment direction of the nozzle 373, which will be described below, As a premise, the detection of the nozzle 3 73 in the form of a hole as shown in Fig. 14 (a) or (b) is assumed. However, in the case of a nozzle in the form of a groove as shown in Fig. 14 (c) or (d), If you set the sampling position beforehand, to evaluate, The same processing can be performed. As a result of measuring the distribution of the vapor deposition rate of the vaporized vapor-deposited material in the longitudinal direction or the alignment direction of the nozzle 3 73, Applied to heater control, As in the past, While filming on the substrate, The power supply for each heater 371H is adjusted, No need to pay for the substrate, And can be used to install monomers, Perform it automatically and more accurately. E.g, The rate of evolution of the vaporized vapor-deposited material 371Z at each portion of the nozzle of the particular heating control block is partially reduced, And the excess is often produced in successive crops. In the initial state, Even if the temperature of each heating control block 3 7 1 B of the vapor deposition source 3 7 1 is balanced, In the continuous crop, The state of consumption of the vapor deposition material 371 Z inside the evaporation source 371, And the contact state with the storage of the crucible 37 1C changes, Further, vaporization of the vapor deposition material 201103998 Status changes. In the past, it was necessary to form a film. Measuring the film thickness, Only then can this state be detected. In the present invention, Because this state can be automatically checked, For the increase or decrease of the power supply amount of the heater 371H corresponding to the heating control block 371B, Again on the second film thickness monitor 320B, Scan the evaporation source 371, The feedback can be performed by confirming in detail whether or not the form of the discharge rate distribution of the vaporized vapor-deposited material is digested. If the above is determined automatically, Attaching the adjusted algorithm to the control means 3 50 of the device, It is also possible to automatically maintain the film thickness of the substrate 61 uniformly in the device. Power supply control for each heater 371H of the vapor deposition source 371 is performed. then, According to Figure 18, A method of confirming the vapor deposition rate for the evaporation start of the substrate 61 will be described. First of all, Moving the vapor deposition source 371 to the retracted position (S1801), Then, In the retreat position, The second film thickness monitor 320B, Move at a certain speed to the nozzle arrangement direction of the steam source 371, The amount of vaporized vapor deposition material from each nozzle was detected (S18 02 ). then, In the control unit 350, The relationship between the movement time of the film thickness monitor 320B and the peak value of the detected flaw, The position of the nozzle 373 of the vapor deposition source 371 is matched with the measured flaw (S1803), In the heating control block unit of the steam source 371, The peak 値 average (S1 8 04 ) from the discharge amount of each nozzle 3 73 is obtained. then, The amount of heat released from each of the nozzles 373 of the heating control block for heat conduction control is mounted, As a benchmark, Comparing the average heat release amount (S1805) from each nozzle 373 of each heating block, The difference is beyond the pre-set tolerance, Check the presence or absence of the heating block (S 1 8 06 ), For the difference is beyond the allowable amount, It is judged to be a large addition -37- 201103998 The hot block system reduces the heater power of the overheated block (S 1 8 07 ), Repeat the steps from S1802 again. on the other hand, In the case where the judgment difference is not exceeded, The next difference is beyond the allowable amount. Check the presence or absence of the heating block (S1808), For the difference is beyond the allowable amount, It is determined that the small heating block increases the heater power of the overheated block (S1809), Repeat the steps from S1802 again. For all heating blocks, The difference from the reference 乃 is judged to be within the allowable range, It is judged to be normal (S 1 8 1 0 ), End the operation. In the above, Will be compared to the width of the substrate 61, It is premised that the width of the vapor deposition source 3 7 1 is sufficiently long. For this situation, The rate at which the vapor deposition material from which the nozzles 3 73 are vaporized must have the same peak value. but, For the width of the substrate 61, The amount of protrusion of the evaporation source 371 is a shorter example. In order to ensure uniformity of film thickness on the substrate 61, It is also considered that the discharge rate of the steaming material gas discharged from the nozzles 373 at both ends of the steam source 371 is higher than that of the central portion. As a normal situation. An example of the detection of the above-described detection system of the vapor deposition material gas in this case, Shown in Figure 19 (a) and (b). Fig. 19 (a) shows the results of monitoring the evaporation state of the vapor deposition source 317 from the nozzle having the pore shape as shown in Fig. 14 (a) or (b). In addition, Fig. 19 (b) shows the results of monitoring the evaporation state of the vapor deposition source 317 from the nozzle having the slit shape as shown in Fig. 14 (c) or (d). Raise the heating temperature at the end, Adding a nozzle 373, The nozzle 3 73 is made to have a large diameter, This contour can be obtained either by shortening the length of the nozzle 3 73 '. For such an example, the rate of evolution of the partially vaporized vapor deposition material gas -38-201103998 is increased or decreased. The state can be maintained via automatic temperature control as well. For the purpose of achieving this, The discharge rate distribution of the vaporized vapor-deposited material under the power supply condition for the film on the substrate 6 to be uniform heating control block 371B, Set as the reference profile, Then, if it is adjusted in accordance with the discharge rate of the vapor deposition material gas discharged from each nozzle 3 73, on the other hand, The result of scanning by the second film thickness monitor 320B, In the case where the discharge rate of the vaporized material having vaporization is extremely reduced, or the discharge rate of the vaporized material which is locally vaporized in the heating control block 371B is lowered, It is suspected that there is a phenomenon in which the vapor deposition material is clogged on the nozzle 3 73 for some reason. Confirm the status of this situation, In the adjustment of the power supply to the heater, the release rate of the vaporized material of the gasification does not recover, From the point of view of preventing the manufacture of defects, For the device manager, Send out a warning, It is preferable to stop the person who has received the substrate or the like in the film forming chamber. This system is still calculated by the control unit 350 when the above determination is performed. It can realize the function of automatic prevention of defective manufacturing. Process the above actions, This is illustrated using Figure 20. First of all, Moving the vapor deposition source 371 to the retracted position (S2001), Then ‘in the retreat position, The second film thickness monitor 320B, Move at a certain speed to the nozzle arrangement direction of the evaporation source 3 7 1 , The amount of vaporization of the vaporized material from each nozzle was detected (S2002). then, In the control unit 3 50, The relationship between the movement time of the film thickness monitor 320B and the peak value of the detected flaw, The position of the nozzle 3 73 of the vapor deposition source 371 is matched with the measured flaw (S2003), From -39 to 201103998, the peak value of the amount of discharge from each nozzle 373 of the vapor deposition source 371 is averaged (S2004). then, The reference 値 is set in accordance with the average 値 from the discharge amount of each nozzle 3 73 (S2005), The amount of discharge from each nozzle 373, Benchmarking 値 and average 値, Check if the difference is beyond the preset allowable nozzle (S2006), And the difference is completely within the allowable 値 condition is judged to be normal (S2007), End the operation. on the other hand, For the case where there is a nozzle with a tolerance of more than 値, Judging the steps from S2002 to S2006 several times (S2008), For the case where the number of repetitions is η times or less set in advance, Return to the step of S2002, Perform the steps to S2006. If 'the number of times for repeating the steps from S2〇〇2 to S2006 is even n times, There are also cases where the nozzle is allowed to be more than 値, Determine the nozzle blockage (S2009), Excluding the substrate 6 1 located in the processing chamber 310 and closing the gate valve 3 1 0 ' of the processing chamber 3 0 1 as a prohibition receiving substrate (S2010), The alarm is generated (S2011) and ends. As shown above, The measurement data of the distribution rate of the vaporization material of the gasification vapor deposition material 371 in the longitudinal direction of the vapor deposition source 371 is one substrate per film 61, Before or after its commencement, Can store data. Therefore, when a bad happens, It can also be used as a specific quality management material for the cause of the project. In the above embodiments, The air flow 375 generated from the nozzle 3 73 of the vapor deposition source 371 does not reach the retracted position w of the substrate 61, Moving the evaporation source 371, The distribution of the vapor deposition rate of the vaporized material in the longitudinal direction of the vapor deposition source 371 is measured. but, Even if the vapor deposition source 371 is not moved to the retracted position W, Between the substrate 61 and the vapor deposition source 371, a 40-201103998 openable and closable means is provided, which is equivalent to the shutter shown in FIG. If the arrival of the gas stream 3 7 5 for the evaporation material of the substrate 6 1 is prevented, The same effect can be obtained. then, In Embodiment 3, For monitoring film thickness monitors 320A and 3 2 0B, Predicting its lifetime, The steps of performing the evaporation on the substrate 61 are sequentially repeated, Use Figure 2 to illustrate. First, As a preparation work before the vapor deposition of the substrate 61 is started. Execute the following. • First, The film thickness monitor 32A, which is interlocked with the evaporation source 371, The discharge rate of the vaporized vapor deposition material discharged from each nozzle of the vapor deposition source 371 was measured (S2101). then, Driving the evaporation source 371 at a specific speed, A film is formed on the sample substrate by vapor deposition (S2 102). then, The film formed on the sample substrate was measured to obtain an average thickness of the film thickness (S2103). According to the discharge rate of the vapor deposition material measured in S1201 and the average thickness of the film thickness obtained in S2 103, The correction coefficient a (S2104) of the film thickness monitor 320A is calculated using (number 1), Use it to calculate the alpha of ©, Correcting the film thickness monitor 320A (S2105), The vapor deposition source 371 is moved to the retracted position (S2106). [Number 1] (driving speed of vapor deposition source 371) X (film thickness measurement 値) α _ (measurement of deposition rate of vapor deposition material X) X (number of scans ^ Next, In the retreat position, Scanning on the evaporation source 371 with a film thickness monitor 3 20 ,, Detecting the amount of vaporized material discharged from each nozzle (S2107), The peak value of the amount of vaporization of the vaporized material from each nozzle is 値 (S2108). then, The peak 値 average 値 of the calculated vapor deposition material from each nozzle and the corrected film thickness monitor -41 - 201103998 320A, the evaporation rate of the vapor deposition material, Using (2), the correction coefficient of the film thickness monitor 320A is calculated (S2109). Using the calculated correction coefficient is cold, The film thickness monitor 320B is corrected (S211〇). [Number 2] The peak value of the output measured by the β-curve thickness monitor 320B is 値) (number 2) (corrected film thickness monitor 320 & The rate of evaporation of the vapor deposition material) The preparation work before the vapor deposition of the substrate 61 is started. then, The evaporation of the actual substrate 61 is started. In the vapor deposition of the substrate 61 or in the vapor deposition, On the detection surface of the film thickness monitor 32 0Α and 320 石英 quartz oscillator 326 of the monitor for film thickness, When accumulating vapor deposition materials, The crystal oscillation frequency of the quartz oscillator 326 is lowered. The film thickness monitors 320 3 and 3 20 Β are the changes in the quartz oscillation frequency per unit time. Transform into the film formation rate, The thickness of the precipitated film and the change in the oscillation frequency of the crystal are used in the range of the linear shape change. therefore, Before the lower limit of the range of its linearity change, Predict the life of the film thickness monitors 3 20A and 3 20B, Before the end of life, Exchange film thickness monitors 3 2 0 A and 3 2 0B, However, in the absence of defective film thickness, It does become important to continue production without reducing productivity. therefore, After the evaporation of the substrate 6 1 is started, Detecting the quartz oscillation frequency of the film thickness monitors 320A and 320B, Predicting the lifetime of the film thickness monitors 32 0A and 320B from the number of frequencies (S2121), Determine if the life arrival is near (S2122), For any of the film thickness monitors 320A and 320B, there is still a sufficient life expectancy, Simultaneously detecting the quartz oscillation frequency of the film thickness monitors 320A and 320B at S2121, Repeat evaporation. on the other hand, When it is judged that the life is approaching, Judging film thickness supervision -42- 201103998 Both sides of the 320A and 3 20B will reach the end of life at the same time. Or either party will reach the end of life (S2123), It is determined that both of the film thickness monitors 320A and 320B will reach the end of life at the same time, First of all, Remember the film thickness monitor 3 before the 20B test 値 (S2131), Replace the quartz oscillator 3 26 (S2132) of the film thickness monitor 320A. then, By replacing the film thickness monitor 320A of its quartz oscillator 3 26, The discharge rate of the vaporized vapor deposition material discharged from each nozzle of the vapor deposition source 371 is measured (S2133), The new 値 (S2134) of the correction coefficient α of the film thickness monitor 3 20A is calculated by the following (number 3), Correct the film thickness monitor 320Α (S2135). [Expression 3] β X (detection Β before memory film thickness monitor 320 値) X (driving speed of vapor deposition source 371) ~ (measurement of emission rate of film thickness monitor 320 値) X (number of scans) Then, Returning to S2 122 using the corrected film thickness monitor 320Α, Performing vapor deposition on the substrate 61, Detecting the number of quartz oscillation frequencies of the film thickness monitor 320Α and 320Β, The lifetime of the film thickness monitor 320 Α and 3 20 预测 is predicted from the number of frequencies. the result, In the case where it is judged at S2 123 that the life of one of the film thickness monitors is approaching, Determine which film thickness monitor (S2 141), For the case where it is judged that the film thickness monitor 320 is defective, The steps from the aforementioned S2131 to S2135 are performed. on the other hand, For the case where it is determined that the life of the film thickness monitor 3 20 到达 is near, Remember the test 値 (S2 142) before the 320-inch film thickness monitor The quartz oscillator 326 of the film thickness monitor 320B is replaced (S2143). Then, By replacing the film thickness monitor 320B of its quartz oscillator 3 26, The rate of evolution of the vaporized vapor-deposited material discharged from each nozzle of the evaporation source 37 1 (-43-201103998 S2 144 ) was measured. The new enthalpy (S21M) in which the correction coefficient of the film thickness monitor 3 20B having the film thickness monitor A as a reference is cold is calculated by the following (number 4). Correct the film thickness monitor 320B (S2147). [Number 4] ^ (The peak value of the output measured by the film thickness monitor 320B is 値) P = (in the memory film thickness monitor 320 & Previous detection 値) ... (number) Next, Returning to S2 122 using the corrected film thickness monitor 320B, Performing vapor deposition on the substrate 61, Detecting the number of quartz oscillation frequencies of the film thickness monitors 320A and 320B, The life of the film thickness monitors 3 20A and 3 20B will be predicted again from the number of frequencies, The processing of the repeating substrate 61 is performed at the same time. In the composition shown in Figure 15, At the first film thickness monitor 320A fixed to the evaporation source 71371, Between the second film thickness monitor 3 20B which measures the distribution of the vapor deposition material 371Z in the longitudinal direction or the arrangement direction of the nozzle 3 73 of the vapor deposition source 371, It is shown that the evaporation source 371 is in the crop, An example of automatic correction is performed with higher accuracy than before. The situation of continuous vacuum evaporation equipment for long periods of time, As shown in Figure 15, In the first and second film thickness monitors 3 20A, In the determination of B, This is done using the quartz oscillator 326. Each film thickness monitor 3 20A, The 3 2 0B system has a complex quartz oscillator 326. The plurality of quartz oscillators 326A - 1 to 3 and 32681 - 3 are fixed to the respective turntables 329A or B. Quartz vibrators 326A-1~3 and 326B1~3 are connected to film thickness monitors 320A and 320B, Electrically connected at the measurement location, The number of transmission frequencies of the quartz oscillators 326A-1 to 3 and 3 26B1 to 3 was measured. On the detection surface of quartz oscillators 326A-1~3 and 326B1-3, stacking 201103998, when there is vapor deposition material, The number of quartz oscillation frequencies decreases. The film thickness monitors 3 20A and 3 2 0B are changes in the number of quartz oscillation frequencies per unit time. Change to the film formation rate. In the film thickness monitor 320A, 320B, The film thickness of the precipitate and the change in the number of oscillation frequencies of the quartz are used in the range of the linear shape change, and the vicinity of the lower limit of the range is Switch the rotary table and install other quartz oscillators M §gf 3 2 6 A — 1 to 3 and 326B1 to 3. In general, In the composition of the film thickness monitor, According to the film, The results of the film thickness measurement were carried out. Quartz oscillators 326A-1~3 and 326B1~3 are slightly different for their linearity. But still have individual differences. therefore, In the past, in the case of precise film thickness control, For all quartz oscillators 326A-1~3 and 3 26B1~3, Must be filmed on the substrate for correction, It takes time for the program. In this embodiment, At least once at the beginning of evaporation, A film thickness monitor 320A for measuring the film thickness of the substrate 61 by vapor deposition, Correction of 320B is necessary, But then for the continuous crop, Correction may be performed without performing an additional film for the substrate 61. First of all, The temperature setting for forming the vapor deposition source 371 is performed. after that, Scan the evaporated source 371 at a specific scan speed, A film formation process is performed on the substrate 61. Recording the evaporation rate of the first film thickness monitor 320A in conjunction with the evaporation source 371 at this time, The film thickness adhering to the substrate 61 was measured. and, The ratio of the evaporation rate of the first film thickness monitor to the film thickness actually attached to the substrate, Produce deviations from specific benchmarks, Correct the 蒸发 of the evaporation rate measured by multiplying the correction factor (material stability). However, for the case of changing the scanning speed, For the evaporation rate, -45- 201103998 The ratio of the product of film thickness to scanning speed, The material stability can also be obtained. then, The second film thickness monitor 320B through the distribution of the discharge rate of the vaporized vapor deposition material 371Z in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source 371, When scanning the evaporation source 371, The average enthalpy of the release rate of the vaporized material 371Z for gasification is obtained. and, The ratio of the corrected correction to the first film thickness monitor 320A is obtained. In the case of deviation between the two, the correction coefficient is obtained. It is adjusted to become a specific depression. In the aforementioned two operations, First correct the second film thickness monitor 3 20B, φ second film thickness monitor 3 20B only benchmark, Correcting the first film thickness monitor 3 20A can also be 0 in the continuous crop, In the first or second film thickness monitor 3 2 0A, 3 20B, In the case of the use limit of the quartz oscillators 326A-1 to 3 and 326B1 to 3 which are close to each other, Switching the film thickness monitor close to the use limit 32 0A, B quartz oscillator 32 6A-1~3 and 326B1~3, By the other side of the film thickness monitor 3 20A, The measurement result before the switching of B is the reference for the correction, Can not stop production for a short time, Correction is performed with high precision. φ hypothesis, For the first or second film thickness monitor 320A, 320B is close to the limit of use at the same time, E.g, For example, switching the quartz oscillator 32 6A-b 3 of the first film thickness monitor of the quartz oscillators 32 6A-1~3 and 326B1~3, After the correction is completed, The quartz oscillators 326B-1 to 3 of the second film thickness monitor are switched and corrected. In this embodiment, Displaying the vapor deposition treatment for the manufacturing process of the organic electroluminescence display device, An application example of the present invention. As in the present embodiment, Not only the membrane, In the evaporation treatment of the metal film, Also shows the same effect -46- 201103998. In addition, for the organic electroluminescent display device, The same effect can be obtained in the manufacturing process of an organic electroluminescence illumination device using a vapor deposition process for a large-area substrate. In addition, in the above embodiment, It has been explained that via vacuum evaporation, An example of a device in which an organic vapor deposited film is formed on a substrate. However, the invention of the present application is not limited to this, and for a vapor deposited film other than an organic film, Such as a metal film, Or the formation of a film of an inorganic material, Also applicable. [Embodiment 4] In Embodiment 3, The case where the substrate 61 carried into the processing chamber 301a is one piece, An example has been explained. Here is shown in Figure 22, In the processing chamber 40 1 , Substrate 62, Place 2 pieces in a horizontal direction, And it shows that there are two film formation positions R, An embodiment of L. And in Figure 23, The processing chamber 401 and the transport robot arm 405 are shown in detail. The configuration of the processing chamber 40 1 of the present embodiment is the same as that of the Figs. 13 and 15 described in the third embodiment. Basically the same, But inside a processing chamber 401, Set two film formation positions R and L, The point at which the vapor deposition source 471 is moved is different. The transport robot 40 in the vacuum is usually a telescopic extension of the robot arm. Rotate, Up and down 3 actor, E.g, In a processing room 4 0 1 a, The case where the film formation positions R and L are arranged in parallel 'the direction of the substrate 6 2 , For the telescopic direction of the transport robot arm 405, when the substrate 6 2 is not inclined, the two substrates 6 2 are not arranged in parallel. As shown in Figures 2 2 and 2 3, in the processing chamber 40 1 a, For arranging two substrates in parallel, in the receiving room 402a, When the transport robot 405 receives the substrate 62, 'the specific amount of base-47-201103998 board 62 is tilted', when the substrate 62 is received on the hand 452, For the telescopic direction of the robot arm 451 that transports the robot arm 405, Keep it obliquely, When the substrate 62 is placed to the processing chamber 401 a, The two substrates 62 are arranged in parallel. 4 0 4 a ~ c is the reception room. In the examples shown in FIGS. 22 and 23, In the first film formation position R' of the process chamber 401a, for one of the substrates 62, The vapor deposition source 471 is scanned to form a film of a vapor deposition material having a specific film thickness. At the same time in the second film formation position L of the process chamber 40 la, The processed substrate 62 is shipped by transporting the robot arm 405, Shipped into the unprocessed substrate 62, Position adjustment of the substrate 62 and the mask 481, The substrate 62 is placed in a state of being overlapped with the mask 481 and is placed on standby. The vapor deposition source 471 has the same structure as that of the third embodiment described with reference to Fig. 15. After the film formation at the first film formation position R, Moving the vapor deposition source 471 to the retracted position W, The gas stream 475 formed as a vapor deposition material does not directly contact the substrate 62 or the mask 481. and, The vapor deposition source 471 is moved from the film formation position R to the film formation position L. The details of the moving means of the vapor deposition source 47 1 at the retracted position W at this time, Shown in Figure 24. 2 film formation positions R, L is a positional relationship parallel to the scanning direction, At the evaporation source retraction position W, In the length direction of the evaporation source (in the direction perpendicular to the scanning direction), Moving vapor deposition source 471 ° When the evaporation source 47 1 reaches the retracted position W, The linear guide 48 9 and the moving mechanism constituted by the rolling screw 492P and the moving member 491, It is combined by the guide pin 490. In this state, Via the motor -48-201103998 492M disposed outside the processing chamber 40 1 Rotating the rolling screw 492 by the vacuum rotation introducing mechanism 492S ', An evaporation source 471 that is coupled to the moving member 491 and the guide pin 49, In the length direction, Moving from the film formation position R to the film formation position 1 'steaming source base 478A of the vapor deposition source 471 scanned at the film formation position R to the vapor deposition source base 478B' provided at the film formation position L will be steamed The plating source 471 slides along the guide groove 479 to replace the placement position. The moving mechanism of the vapor deposition source 471 is an example, as the same effect can be obtained. Can also be of any construction. By doing this, By processing the film formation of the substrate in two film formations without interaction, The wasteful time can be eliminated, and the productivity of the evaporation source is increased. In turn, the use efficiency of high-priced vapor deposition materials is improved. Especially the film formation time, More than the substrate in and out, The time taken for the calibration of the substrate and the cover is long. It is possible to shorten the travel time of the vapor deposition source by using the useless time. As above, When the vapor deposition source 471 is moved, The second film thickness monitor 420B that distributes the discharge rate of the vaporized material of the vaporized material in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source 471, When it is disposed on the moving path from the film forming position R of the vapor deposition source 471 to the film forming position L, The distribution of the vaporization rate of the vaporized vapor-deposited material in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source can be measured. In this case, the second film thickness monitor 42 0B may be fixed to the side of the processing chamber 410 in the vicinity of the middle of the two film formation positions R and L. As this is done, In the same manner as in the third embodiment, The distribution rate of the vapor deposition material 471Z which can be vaporized in the longitudinal direction or the arrangement direction of the nozzle 47 3 of the vapor source 47 1 is measured. -49- 201103998 Next, In Embodiment 4, The processing steps for confirming the evaporation rate before the vapor deposition starts, This will be explained using Figure 27. First of all, Moving the vapor deposition source 471 to the retracted position (S2701), Then, In the retreat position, At a position facing the second film thickness monitor 420B, Moving the vapor deposition source 471 at a constant speed to the length direction of the nozzle, The amount of vaporized material to be vaporized from each nozzle is detected (S2702). Then, At the control unit 450, The relationship between the movement time of the film thickness monitor 420B and the peak value of the detection 値, The position of the nozzle 473 of the vapor deposition source 471 is matched with the measured flaw (S2 703), Taking each heating control block unit of the evaporation source 471, The peak 値 average of the amount of discharge from each nozzle 473 is obtained (S27 04). then, The amount of discharge from each nozzle 473 of the heating control block for heat conduction of the installation control is averaged, As a benchmark, Comparing the amount of discharge of each nozzle 473 of each heating block to the average, and obtaining the difference (S 2705 ), The difference is beyond the pre-set tolerance. Check for the presence or absence of a large amount of heated block (S2 706), For the difference is beyond the allowable time, There is a case where a large amount of heating block is released, Lowering the heater power of the heating block (S2707), Repeat the steps from S2702 again. on the other hand, The difference is beyond the allowable amount, Judging that there are no large heating blocks, Then check the difference is beyond the allowable amount, Check for the presence or absence of a small heating block (S27 08), For checking the difference is beyond the allowable amount, In the case of a heating block that is judged to be small, Increase the heating power of the heating block (S2709), Repeat the steps from S2 7 02 again. For all heating blocks, The difference from the reference 乃 is judged to be within the allowable range. The system is judged to be normal (S2710), End operation" 201103998 However, In the above example, 'there are two film formation positions in parallel with the scanning direction. However, as shown in FIG. 25, 'the two film formation positions are arranged in the same direction as the scanning direction (X direction) of the vapor deposition source 471', and between the film formation positions R and L, 'the vapor deposition source 71471 is provided. Retreat position W» in this case, As shown in Fig. 26, as the second film thickness monitor 420B side, a moving mechanism 425 that is coupled to the rolling screw 424P driven by the motor 424M is provided by the vacuum rotation introducing mechanism 429S'. The configuration of the film thickness monitor 42 0B is maintained by the robot arm 42 6' supported by the moving mechanism 425. The rolling screw 424P is driven by the motor 424M. Film thickness monitor 420B, When the vapor deposition source 471 stopped at the standby position W is moved, The evaporation rate of each portion of the nozzle 473 of the evaporation source 471 can be monitored. In Figures 25 and 26, For the same components as those illustrated in Fig. 23, Use the component number as a common, The description is omitted. In the present embodiment, 'the substrate is shown as an example of parallel processing of two sheets, However, the substrate is transported in or out or the position of the substrate and the cover is adjusted. Compared with the case where the film formation time is long, It is also possible to form three or more parallel processes. In this case, The second film thickness monitor 420B may be disposed between the film formation positions. The film thickness monitor 420A' which is often subjected to fixed-point observation while moving from the vapor deposition source 471, uses a plurality of film thickness monitors 42A, At 420B, It is necessary to correct between the film thickness monitors. System - measurement results. For the film thickness monitor 42A disposed at the retreat position w of the vapor source 471, Among the 420B, Use either as a benchmark, Just make corrections. The index of the rate of evolution of the vaporized vapor-deposited material obtained herein, In the same manner as in the first embodiment, the supply power to the heater is adjusted. The distribution rate of the vaporization material 471Z of the vaporized material 471Z in the longitudinal direction or the arrangement direction of the nozzle 47 3 of the steam source -51 - 201103998 plating source 471 can be controlled to be lowered. And judgement materials or quality management that can be used to observe nozzle clogging. The present invention may be embodied in other specific forms without departing from the spirit and essential characteristics. The present invention is to be considered in all respects as illustrative and not restrictive, and the scope of the invention is defined by the following claims rather than the description above and the meaning and scope of equivalents of the claims. All changes within it are therefore contemplated to be covered. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a configuration of an apparatus for manufacturing an organic electroluminescence device. FIG. 2 is a view showing a schematic diagram and an operation of a configuration of a transport chamber and a processing chamber according to a first embodiment of the present invention. . Figure 3 is a diagram showing the mask. Fig. 4 is a view showing the positional relationship between the vapor deposition source, the substrate, and the film thickness monitor in the first embodiment of the present invention. Figure 5 is a view showing a vapor deposition source according to a first embodiment of the present invention, A diagram showing the positional relationship between the film thickness monitor and the shutter. Fig. 6 is a graph showing an example of the output of the film thickness monitor. Fig. 7 is a flow chart showing the operation of the vapor deposition process of the substrate in the first embodiment of the present invention. Fig. 8 is a view showing a schematic view and an operation of a configuration of a transport chamber and a processing chamber in a second embodiment of the present invention. -52-201103998 Fig. 9 is a view showing the positional relationship between the vapor deposition source, the substrate, and the film thickness monitor in the second embodiment of the present invention. Fig. 10 is a view showing the positional relationship between the left and right vapor deposition positions and the vapor deposition source, the substrate, and the film thickness monitor in the second embodiment of the present invention. Fig. 11 is a flow chart showing the operation of the vapor deposition process of the substrate in the second embodiment of the present invention. Fig. 12 is a view showing a schematic view and an operation of a configuration of a transport chamber and a processing chamber in a third embodiment of the present invention. Figure 13 is a view showing the configuration of the inside of the processing chamber of the group forming film device of the third embodiment of the present invention, And a schematic view of a means for detecting the state in which the vapor deposition material of each of the vapor deposition sources is discharged. Figure 14 is a view showing a third embodiment of the present invention, An illustration of a nozzle form of a vapor deposition source having a nozzle disposed on a wire of a shovel source. Figure 15 is a view showing a third embodiment of the present invention, A schematic cross-sectional view of a means for detecting a state in which a vapor deposition material gas of each nozzle of a vapor deposition source is discharged is shown in Fig. 16. Fig. 16 is a third embodiment of the present invention. An example of the detection result obtained by means of means for detecting the state of discharge of the vapor deposition material gas of each nozzle. In the case of surrounding the film thickness monitor with a shielding plate, A graph showing an example of a normal situation and an abnormal situation, A diagram corresponding to the heater is attached. FIG. 17 is a third embodiment of the present invention. An example of the detection result obtained by means of means for detecting the state of discharge of the vapor deposition material gas of each nozzle. In the case of not surrounding the film thickness monitor with a shielding plate, A graph showing the normal case of -53-201103998 and an abnormal situation, The attached figure corresponding to the heater is attached. Figure 18 is a view showing a third embodiment of the present invention, Information obtained by means of means for detecting the discharge state of the vapor deposition material gas of each nozzle, An action flow chart for the case where the heater control is performed. The display film thickness monitor side is an example of moving and detecting the discharge state of the vapor deposition material gas of each nozzle. Figure 19 is a third embodiment of the present invention, An example of a detection result obtained by means of means for detecting a state in which the nozzle of the vapor deposition source is in a state of a hole or a slit, and a state in which the vapor deposition material gas φ body is discharged. The attached figure corresponding to the heater is attached. Figure 20 is a view showing a third embodiment of the present invention, Information obtained by means of means for detecting the discharge state of the vapor deposition material gas of each nozzle, Detecting nozzle clogging of the evaporation source, A diagram showing the flow of the action of the alarm condition. The vapor deposition source side is an example of the state in which the vapor deposition material gas of each nozzle of the movement detection is released. Figure 21 is a view showing a third embodiment of the present invention, An action flow chart showing a method of constructing a quartz oscillator during switching. Figure 22 is a view showing a fourth embodiment of the present invention, A schematic block diagram of a device configuration for forming a film on a substrate in a horizontal state is performed. Figure 23 is a view showing a fourth embodiment of the present invention, The movement of the vapor deposition source configured to perform film formation for the substrate in a horizontal state is detected, An oblique view of the means for discharging the vapor deposition material gas of each of the nozzles of the steaming shovel source. In this picture, In a direction perpendicular to the direction in which the substrates are arranged, Scan the evaporation source. -54- 201103998 Figure 24 is a view showing a fourth embodiment of the present invention, Detecting the substrate that is maintained in a horizontal state, In a direction perpendicular to the direction in which the substrates are arranged, A plan view of means for discharging the vapor deposition material gas of each nozzle of the vapor deposition source in the case where the vaporized ore source is scanned. Figure 25 is a view showing a modification of the fourth embodiment of the present invention, The relationship between the movement of the vapor deposition source of the apparatus for forming a film in a horizontal state and the state of discharge of the vapor deposition material gas of each nozzle of the vapor deposition source is examined. In this picture, In the same direction as the substrate arrangement direction, Scan the evaporation source. Figure 26 is a view showing a modification of the fourth embodiment of the present invention, Detecting a substrate that is maintained in a horizontal state, In the direction of the substrate arrangement, Scan the evaporation source, A plan view of means for discharging the vapor deposition material gas of each nozzle of the vapor deposition source in the case of film formation. Figure 27 is a view showing a fourth embodiment of the present invention, Information obtained by means of means for detecting the discharge state of the vapor deposition material gas of each nozzle, An action flow chart for the case where the heater control is performed. An example in which the vapor deposition source side is the state in which the steaming material gas of each nozzle is moved is displayed. [Main component symbol description] 1〇〇: Organic electroluminescent device manufacturing device 1, 201, 301a-l~f-2, 401: Processing chamber 2a~d, 202, 302a~c ··Transport room 3 : Hosting groups 4a~e, 3 04a~e : Receiving room -55- 201103998 5a~d, 305a, 6 , 6R, 61 , 8 R : Calibration unit 10, 310: Gate 20 220, 31 24 , 276: Drive 26 326 : Stone 2 8 : Detection surface 40: Drawing in vacuum 4 1 : First link 42: Second link 50, 250 : Control 7 1 : Evaporation source sound I 71 a~η, 3 7 1, 7 1 S : Temperature sense 7 1 Η : Heater 71Ζ : Evaporating material 72 : Drive up and down 72C: Rotating part 72Μ, 492, 73a~η, 373, 75, 275: Guide 74, 274L: II 76P, 492P: 405: Shipping robot 62 : Substrate valve 9 : Film thickness monitor, moving part, English oscillator, 3 lines, Piping mechanism 471 : Evaporation source measuring material ! Department 424M: Drive motor 4 7 3 : Nozzle rail I closed rolling spiral -56- 201103998 76 : Guide shaft 81 , 81R, 381, 481 : Shield 8 1 Μ, 3 73 : Cover 82, 282 : Substrate holding means 83, 83R: Calibrate the drive unit 6Α, 81Α, 84: Calibration mark 85 : Window φ 93 : Substrate rotation means 94, 3 5 2a : Comb hand 271 : Evaporation section 331a: Loading the interlock vacuum chamber 351 : Shipping robot 371Z > 375 > 471Z: Evaporating material 3 72, 425 : Mobile mechanism 3 7 2 P : Nut • 372S, 429S: Vacuum rotary induction mechanism 3 7 8, 47 8B : Evaporation source base 387 : Hook 48 9 : Linear guide 4 9 0 : Guide pin 420A: First film thickness monitor 420B: Second film thickness monitor -57-