TWI425104B - Vacuum evaporation method and device thereof - Google Patents

Description

Vacuum evaporation method and device thereof

The present invention relates to a method and apparatus for forming a vacuum evaporation film, and more particularly to a vacuum evaporation method and apparatus for forming a film having a uniform thickness on a large substrate.

The organic electroluminescent device used in the organic electroluminescence display device or the illumination device has a structure in which an organic layer made of an organic material is sandwiched between the anode and the cathode, and the voltage is applied to the electrode. At this time, holes are implanted from the anode side, electrons are implanted from the cathode side to the organic layer, and recombination is performed to generate a light-emitting structure.

The organic layer is a structure in which a multilayer film including a hole implant layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron-implanted layer is laminated. As a material for forming an organic layer thereof, there are those using a polymer material and a low molecular material. In the case of using a low molecular material, an organic thin film is formed by a vacuum evaporation apparatus.

The characteristics of the organic electroluminescence device are greatly affected by the film thickness of the organic layer. On the other hand, the substrate on which the organic thin film is formed is increased in size year by year. Accordingly, in the case of using a vacuum evaporation apparatus, it is necessary to control the thickness of the organic thin film formed on the large substrate with high precision.

A vacuum vapor deposition apparatus having a linear vapor deposition source is disclosed in the patent document 1 (JP-A-2004-95275). In the patent document 2 (JP-A-2002-343563), a vacuum vapor deposition apparatus in which a large-sized substrate is held vertically and a vapor deposition source having a plurality of crucibles is used to form a thin film on a substrate is disclosed. In addition, the vapor deposition source movement guide unit is provided in the vapor deposition source movement guide unit, and a plurality of vapor deposition sources are provided along the vapor deposition source movement guide unit. The composition of movement.

Patent Document 1 discloses a configuration in which a glass substrate is moved in a direction perpendicular to the nozzle array direction by forming a plurality of nozzles arranged in a line shape, and an organic thin film is formed on the glass substrate, and is disposed at an uneven pitch. The plurality of nozzles of the vapor deposition source are arranged to avoid unevenness in the film thickness in the longitudinal direction of the vapor deposition source. However, for each of the plurality of nozzles, the clogging state in which the deposition by the vapor deposition material is detected is not considered.

In the case of the entire back surface of the substrate which is kept large by the holder, the film is held in an unbent substrate, and the material is evaporated from the vapor deposition source of the plurality of crucibles to form a film on the substrate. . However, the means for homogenizing the thin film formed on the substrate has not been disclosed.

Patent Document 3 describes a film forming apparatus that forms a film on a substrate by detecting a film thickness measured by a film thickness monitor, detecting a vapor deposition rate, and predicting a film thickness to be deposited therethrough. However, the means for homogenizing the thin film formed on the substrate has not been disclosed.

An object of the present invention is to solve the above-described problems of the prior art, and to provide a vacuum deposition method for forming an organic thin film on an enlarged substrate by using a vapor deposition source provided with a plurality of nozzles arranged in a line shape, and a uniform film thickness. Its device.

In order to achieve the above object, in the present invention, a substrate holding means for holding a substrate in a vapor deposition apparatus which vaporizes a vapor deposition material heated by a substrate, and a vaporization evaporation material are provided in a processing chamber for evacuation. a first moving means for moving at least one of a substrate holding means for maintaining a vapor deposition source or a substrate in a direction perpendicular to a direction in which the vapor deposition source is perpendicular, in a direction in which the nozzle is discharged. And a detecting means for detecting a discharge rate of the vapor deposition material from the vapor deposition source, and a second moving means for moving at least one of the vapor deposition source and the detecting means in parallel with a direction in which the vapor deposition source is long, and the control substrate The holding means and the vapor deposition source, the first moving means and the detecting means, and the control means of the second moving means are configured to control at least one of the second moving means, the movement detecting means, and the vapor deposition source by the control means. The distribution of the discharge rate of the vapor deposition source in the longitudinal direction is measured.

Further, in order to achieve the above object, in the vacuum chamber of the vapor deposition device, a vacuum vapor deposition portion that forms a film on the surface of the substrate to be coated with the mask cover is formed in a vacuum chamber of the vapor deposition device, and a vacuum vapor deposition portion that forms a film by vapor deposition is provided. In a vacuum-maintaining environment, a vacuum vapor deposition apparatus for receiving a substrate to be processed of a substrate to be processed is interposed between a plurality of vacuum deposition sections, and at least one of the plurality of vacuum vapor deposition sections is borrowed. a vapor deposition source in which the vapor deposition material vaporized by heating is discharged in a vacuum chamber by a plurality of nozzles disposed on the wire, and a substrate holding means held in a state in which the substrate is covered with a mask, and In the substrate to be processed held by the substrate holding means, the vapor deposition source driving means for scanning in the vertical direction and the nozzles provided in the vapor deposition source are arranged in a plurality of nozzle arrangement directions in which the vapor deposition source is disposed on the line. The nozzles of the plurality of adjacent or adjacent nozzles are configured as a group to monitor the individual discharge states of the vapor deposition materials discharged from the groups of the nozzles.

Further, in order to achieve the above object, in the present invention, as the vapor deposition device, a plurality of vacuum vapor deposition portions are provided in the vacuum chamber, and the vacuum vapor deposition portions are arranged in the longitudinal direction of the vapor deposition source, and the vapor deposition source is The positional determination means is determined in the longitudinal direction of the vapor deposition source, and the position is determined in accordance with the position of the substrate holding portion provided in each vacuum vapor deposition portion, and the position is determined as the evaporation source corresponding to the position of the substrate holding portion. A vapor deposition source is scanned in a direction perpendicular to the longitudinal direction of the vapor deposition source, and a substrate formed on the substrate holding portion is formed, and a scanning film formation means is provided. The vacuum deposition portion removes the film formation process from the substrate holding portion. The substrate is replaced with an unprocessed substrate, and a substrate replacement means for determining the position is provided. When the substrate is replaced in the scanning film formation, the vapor deposition on the moving path of the vapor deposition source between the vacuum vapor deposition portions is provided. A means of monitoring the amount of material released.

Further, in order to achieve the above object, in the first vacuum vapor deposition portion that is connected to a vacuum chamber that is evacuated and maintained in a vacuum state, a film is formed by vapor deposition on the surface covered with the mask. The surface of the substrate to be processed is delivered to the second vacuum vapor deposition unit from the first vacuum deposition unit in a vacuum-maintaining environment, and is vacuum-plated in the second vacuum deposition unit. In the first vacuum deposition unit, the substrate is processed by the shield cover, and the vapor deposition material is discharged into the vacuum chamber through a plurality of nozzles disposed on the vapor deposition source line, and the vapor deposition source is used. When the scanning direction of the plurality of nozzles disposed on the line along the substrate to be processed is scanned in the vertical direction, the vapor deposition film is formed on the substrate to be processed by the mask, and when the vapor deposited film is formed on the substrate to be processed, The discharge state of the vapor deposition material discharged from the vapor deposition source is monitored by the first monitoring means.

According to the present invention, it is possible to monitor the nozzles of the vapor deposition source in which a plurality of nozzles arranged in a line are arranged, and to discharge the organic electroluminescent material gas, and to form the organic thin film in a uniform thickness and to form a large-sized substrate.

The features and advantages of these inventions will be apparent from the following detailed description of the invention as illustrated in the accompanying drawings.

As an example of the vacuum vapor deposition apparatus of the present invention, an example suitable for the production of an organic electroluminescence device will be described. The manufacturing device of the organic electroluminescence device is attached to the anode, and the hole is implanted into the layer or the hole transport layer, the light-emitting layer (organic film layer), under the cathode, and the electron implant layer or the transport layer or the like is used for various materials. The film layer is formed by laminating a plurality of layers by vacuum evaporation. The apparatus for manufacturing an organic electroluminescence device according to the present invention includes: in a vacuum deposition unit, a vapor deposition source for evaporating a material by a plurality of nozzles disposed on a line, and a processing chamber for monitoring each nozzle of the vapor deposition source The monitoring means of the release state of the material gas is characterized.

Hereinafter, embodiments of the present invention will be described using the drawings.

[Example 1]

Fig. 1 is a view showing an example of the configuration of an apparatus for manufacturing an organic electroluminescence device according to the first embodiment. In the organic electroluminescent device manufacturing apparatus 100 of the present embodiment, the load group 3 of the substrate 6 to be processed and the four processing groups (A to D) for processing the substrate 6 are provided, and are disposed adjacent to each other. The five reception rooms 4a to e between the groups A to D or the processing group A and the carrier group 3 or the next project (sealing project) are configured.

The carrier group 3 includes a load chamber 31 having a gate valve 10 for maintaining a vacuum before and after, and a transfer robot 3R that receives the substrate 6 from the load chamber 31 and rotates the substrate 6 into the reception chamber 4a. Each of the load chambers 31 and the receiving chambers 4 has a gate valve 10 in front and rear, and the switch having the gate valve 10 is controlled to maintain a vacuum (the means for maintaining the vacuum, for example, the vacuum exhaust pump is omitted), and the substrate is Delivered to the group 3 or the next group.

Each of the groups (A to D) has a transport chamber 2a to d having transport robots 5a to 5d, and a substrate received from the transport robots 5a to 5d, and is placed on the upper surface of the screen for performing specific processing. The processing chambers 1a to d, u or d (the first added words a to d are groups, and the second added words u and d are displayed on the lower side). Each gate valve 10 is provided between each of the transport chambers 2a to 2d and each of the processing chambers 1a to d, u or d.

Fig. 2 is a view showing an outline of the internal structure of the transport chamber 2 and the processing chamber 1 according to the first embodiment. The configuration of the processing chamber 1 differs depending on the processing contents. However, the processing chamber 1bu in which the electroluminescent layer is vacuum-deposited by vapor deposition of the luminescent material will be described as an example. The transport robot 5b provided inside the transport chamber 2b has a robot arm 51 that can be rotated to the left and right, and a comb-shaped hand 52 for transporting the substrate is attached to the front end.

On the other hand, as shown in FIGS. 4(a) and 4(b), the processing chamber 1bu is provided with a vapor deposition source portion 71 which is vapor-deposited on the substrate 6 and a vapor deposition source portion 71 along the evaporation material. The substrate 6 is held vertically by the substrate holding means 82, and the lower driving unit 72 is driven in the vertical direction in parallel with the substrate 6, and the mask 81 for evaporating the luminescent material to the necessary portion of the substrate 6, and the substrate 6 are driven. The comb-shaped hand portion 94 that is fed between the transport robot arm 5b and the substrate 6 received by the comb-shaped hand portion 94 are erected and moved to the substrate rotating means 93 of the substrate holding means 82. In addition, when vacuum vapor deposition is performed, the inside of the processing chamber 1bu is maintained at a high vacuum of about 10-3 to 10-4 Pa via a vacuum exhaust pump (not shown).

However, although omitted in FIG. 2, the transfer chamber 2b and the processing chamber 1bu are separated by a switchable gate valve 10, and the substrate 6 between the transfer chamber 2b and the processing chamber 1bu is received in a vacuum. get on.

The configuration of the shield 81 is shown in FIG. The shield 81 is configured to include a cover 81M and a frame 81F. The calibration mark detecting means (not shown) detects the position of the alignment mark 84 formed on the substrate and the position of the window 85 of the mask 81 to be fixed to the calibration driving portion 83 of the substrate holding means 82, and is formed in the cover 81M. The window 85 (see FIG. 2) is positionally adjusted to a calibration mark 84 formed on the substrate 6.

4 is a view showing a relationship between the vapor deposition source portion 71 and the substrate 6 and the shield cover 81 which are held perpendicular to each other via the substrate holding means 82. Fig. 4(b) is a view taken from the direction of arrow B in Fig. 4(a).

The up-and-down driving means 72 moves the vapor deposition source unit 71 to the vertical direction along the pair of guide shafts 76, and includes a drive motor 72M provided on the atmosphere side, and is rotationally driven via the same drive motor 72M, and is vacuum-sealed. The rotating portion 72C of the sealing portion 72S provided on the wall surface 1buw of the processing chamber 1bu is fixed to the rotating portion 72C, and the rolling screw 72P that rotates in synchronization with the rotating portion 72C is fixed to the vapor deposition source portion 71 and is rotated by the rolling screw 72P. The vapor deposition source portion 71 is provided with the upper and lower nuts 72K, and the guide 72G that guides the pair of the guide shafts 76 of the pair of vapor deposition source portions 71 in the vertical direction. The pair of guide shafts 76 have one end 1buw from the wall surface of the processing chamber 1bu and the other end supported by the support plate 78.

The vapor deposition source portion 71 has n vapor deposition sources 71a to n (the number n is determined corresponding to the width direction of the substrate 6 and n also includes 1), and each of the vapor deposition sources 71a to n has The vapor deposition material 71Z is housed inside, and the heater 71H of the vapor deposition material 71Z accommodated therein and the temperature sensor 71S for detecting the evaporation temperature are externally heated, and the control device 50 monitors the output of the evaporation temperature detected by the temperature sensor 71S. The heater 71H is controlled to obtain a specific vapor deposition rate. In addition to the temperature-controlled evaporation rate, the output of the heater 71H can be directly controlled based on the value of the amount of vaporized vapor deposition material 71Z detected by the film thickness monitor 20. As shown in the guide diagram of Fig. 2, the vapor deposition source portion 71 is linearly arranged with nozzles 73a to n corresponding to the respective vapor deposition sources 71a to n, and the vapor deposition material 71Z heated and vaporized therefrom. The nozzles 73a to n are discharged to the inside of the processing chamber 1bu, and are vapor-deposited by the mask 81 on the surface of the substrate 6 which is perpendicular to the vapor deposition source portion 71. If necessary, in order to improve the characteristics of the vapor deposition film, the dopant material may be simultaneously heated to be vapor-deposited. In this case, a plurality of vapor deposition sources may be formed in parallel with each of the vapor deposition sources 71a to n.

The vacuum inner wiring ‧ the piping mechanism 40 has a hollow first link 41 that is rotatable at one end in the wall surface 1buw of the processing chamber 1bu, and is fixed in a state open to the atmosphere, and one end is rotatably connected to The other end of the first link 41 is a link structure in which the other end is a rotatably fixed hollow second link 42. A wiring 44 for the power supply line of the heater 71H and the signal line of the temperature sensor 71S is placed in the hollow link. In the vacuum inner wiring ‧ the piping mechanism 40 is configured to maintain the wiring of the signal line and the power supply line at the destination position when the two links 41 and 42 are rotated by the movement of the vapor deposition source unit 71 in the vertical direction State.

In such a configuration, as shown in FIG. 5, the vapor deposition source unit 71 opens the shutter 74 (the switching mechanism of the shutter 74 is omitted) at the standby position WSL at the lower end before the vacuum deposition is started, and is mounted along the line. The film thickness monitor 20 of the support body 25, which is movable by the horizontal direction guides 21 supported by the support members 22 and 23, is driven by the drive unit 24 along a plurality of vapor deposition source portions 71 arranged in a line shape. The nozzles 73a-n of the vapor deposition sources 71a-n are moved (scanned) at a constant speed, the amount of evaporation is monitored, and the signal monitored by this is transmitted to the control part 50.

The film thickness monitor 20 detects the film formation rate in accordance with the frequency change corresponding to the deposition amount of the film formation material attached to the quartz oscillator. The detection surface 28 of the film thickness monitor 20 is located in the same plane as the surface corresponding to the surface of the substrate 6 which is held perpendicular to the substrate holding means 82 for the vapor deposition source portion 71 (and the vapor deposition source portion). 71 is disposed at the same interval from the substrate 6 and has a vapor deposition rate (the thickness of the vapor deposited film per unit time) at a position corresponding to the surface of the substrate 6 (the nozzle is 71). The distribution of the arrangement direction of 73a~n).

The control unit 50 analyzes the deposition rate of the substrate surface position corresponding to the evaporation amount from each of the nozzles 73a to n detected by the film thickness monitor 20, and checks the state of evaporation from each of the nozzles 73a to n, as compared with In addition, it is possible to compare the nozzles having a small detection signal and the reference level in which the detection signal levels from all the nozzles are preset, and to check the excessive amount of evaporation.

6(a) to 6(c), the relationship between the position of the film thickness monitor 20 and the vapor deposition rate is shown as an example of a signal detected by the film thickness monitor 20. Fig. 6(a) shows that the vapor deposition rate is constant at each position, and is between the upper limit value Ru and the lower limit value R1 of the reference range. In this case, the vapor deposition is normally performed. Fig. 6(b) shows the decrease in the evaporation rate from a certain position and the decrease in the evaporation amount of the plural. This is an example in which the vapor deposition sources 71a to n are divided into a plurality of sections and are heated by the heater 71H in each section unit. In this case, if the temperature of the corresponding section is confirmed by the temperature sensor 71S, the voltage applied to the heater 71H that heats the section thereof is controlled, and the vapor deposition rate is set between the above-mentioned reference ranges Ru and R1. Adjust it. Further, Fig. 6(c) shows a state in which the evaporation amount from one of the plurality of vapor deposition sources 71a to n is lowered compared to the other, such as a specific corresponding vapor deposition source 71X, and whether or not the nozzle 73 is in question. It is only necessary to take countermeasures against the cause of abnormality of clogging or heating temperature.

In the examples of FIGS. 6(b) and 6(c), an abnormal state in which the vapor deposition rate is lower than the lower limit value R1 is shown as an example. However, the vapor deposition rate is an abnormal state in which the upper limit value Ru is increased. In the case, the countermeasure can be carried out in the same manner as described above.

That is, according to the present embodiment, since the vapor deposition material which is vaporized from each of the nozzles 73a to n can be inspected to the inside of the processing chamber, the control of the more delicate vapor deposition rate can be improved, that is, film formation on the substrate. The film thickness distribution of the film is uniform.

The film thickness monitor 20 scans the state in which the vapor deposition material vaporized by the vapor deposition sources 71a to n is discharged from the nozzles 73a to n to the inside of the processing chamber, and after confirming that there is no abnormality, the upper and lower driving means 72 are used at a constant speed. The vapor deposition source portion 71 is raised, and the luminescent material is vapor-deposited by the mask 81 on the substrate 6 disposed on the opposite surface. The vapor deposition source portion 71 reaches the standby position WSu beyond the opposite substrate 6 and reaches the rising end, and waits for the start of vapor deposition for the next substrate while being covered by the shutter 75.

In the present embodiment, since only the film thickness monitor 20 is provided at the standby position WSL on the lower end side of the vapor deposition source portion 71, the vapor deposition source portion 71 starts to fall from the standby position WSu on the rising end side. At the time, the monitoring of the evaporation amount was not performed.

Fig. 7 is a flow chart showing the processing via the processing chamber 1 thus constructed. As a basic idea of the process of the present embodiment, the vapor deposition surface of the substrate is transported as the upper surface, and the substrate 6 transported on the upper surface is vertically erected, transported to the aligning portion 8, and vapor deposition is performed. The lower surface of the substrate 6 during transport is a vapor deposition surface, and it is necessary to invert it. However, the upper surface is a vapor deposition surface, and it is only erected vertically.

First, the substrate 6 is carried in (S701), the substrate 6 is erected vertically, and moved to the aligning portion 8 (S702), and the position of the substrate 6 and the mask 81 is adjusted (S703). At this time, the substrate 6 is formed by transporting the vapor deposition surface as an upper surface, and the position adjustment can be performed immediately when standing upright. The position adjustment is as shown in the guide diagram of FIG. 2, and is photographed by a CCD camera (not shown), and the calibration mark 84 provided on the substrate 6 is present at the center of the window 85 provided in the mask 81M, and is shielded. The cover 81 is performed when the calibration drive unit 83 performs control. The size of the window 85 is, for example, about 50 μm in width and 150 μm in height. The thickness of the cover 81M is 40 μm, and tends to be thinner in the future.

Between the substrates 6, the vapor deposition source portion 71 is retracted to the standby position WS1 at the lower end, and the nozzles 73a to n are covered by the shutter 74. Next, when the position adjustment of the substrate 6 is started, the shutter 74 is turned on (S704), and the vapor deposition material evaporated from the vapor deposition sources 71a to n is discharged from the respective nozzles 73a to n to the inside of the processing chamber 1.

In this state, the film thickness monitor 20 starts scanning along the respective nozzles 73a-n (S705), monitors the vapor deposition rate at each position corresponding to the surface of the substrate 6, and detects vaporization from each of the nozzles 73a to n. The state of the plating material to the inside of the processing chamber (S706). When the scanning of the film thickness monitor 20 is completed (S707), the control unit 50 checks the vapor deposition rates of the respective nozzles 73a to n and the entire portion (S708), and if there is an abnormality, it is determined that the cause is the clogging of the nozzles 73a to n or When the applied voltage of the heater 71H is abnormal (S709), when the applied voltage of the heater 71H is abnormal, the applied voltage of the heater 71H is returned (S710), the process returns to S705, and the film thickness monitor movement is resumed. On the other hand, in the case where the nozzles 73a to n are clogged, an alarm notification abnormality is issued (S711).

When the evaporation amount from each of the nozzles 73a-n through the film thickness monitor 20 is checked, and the position adjustment of the mask 81 and the substrate 6 is completed, the shutter 74 is closed (S712), and the upper and lower driving means 72 are driven to start. The vapor deposition source portion 71 is moved upward (S713), and the vapor deposition source portion 71 is moved at a constant speed, and the evaporated vapor deposition material 71Z is discharged from the respective nozzles 73a to n to the inside of the processing chamber 1 to be unwound. The mask 81 is vapor-deposited onto the substrate to form a film (S714). When the vapor deposition source portion 71 reaches the upper end, the rise of the vapor deposition source portion 71 is stopped (S715), and when the vapor deposition of the substrate 6 is completed, the respective nozzles of the vapor deposition source portion 71 are at the standby position WSu at the rising end. 73a to n are in a state of being covered by the shutter 75, and are waited until the vapor deposition of the next substrate is started. Next, the substrate 6 is carried out from the processing chamber 1 (S716), and the subsequent loading of the new substrate 6' is waited for.

Next, the new substrate 6' is carried (S717), and the new substrate 6' is held vertically (S718). When the position adjustment of the mask is completed (S719), the upper and lower driving means 72 are driven to start the evaporation. Movement below the source portion 71 (S720), while the vapor deposition source portion 71 is moved at a constant speed, the evaporated evaporation material 71Z is discharged from the respective nozzles 73a to n to the inside of the processing chamber 1, and the shield 81 is released. On the substrate, vapor deposition is performed to form a thin film (S721). When the vapor deposition source portion 71 reaches the lower end, the lowering of the vapor deposition source portion 71 is stopped (S722), the vapor deposition of the new substrate 6' is completed, and the vapor-deposited substrate 6' is shipped (S723). Here, at the time of starting the vapor deposition of the new substrate 6', the vapor deposition source portion 71 is located on the rising end side, and since the film thickness monitor 20 is not provided on the rising end side, the vapor deposition source portion 71 is not provided. Monitoring of the amount of evaporation from each of the nozzles 73a-n before the start of the descent. That is, the processing of the corresponding flow up to (S704) to (S711) is not performed.

After that, the above process is repeated.

According to the embodiment described above, the amount of deposition of the vapor deposition material from each of the nozzles 73a to n is adjusted by monitoring the vapor deposition rate distribution in the direction in which the nozzles 73a to n of the vapor deposition source portion 71 are arranged on the surface of the substrate 6. In this case, it is possible to provide a device for manufacturing an organic electroluminescence device having uniform film thickness distribution and high reliability.

The above embodiment has been described for all cases in which the vapor deposition surface of the substrate 6 is transported as the upper surface. As a method of transporting another substrate, there is a method in which the vapor deposition surface is transported as a lower surface, and the substrate is placed in a container or the like and transported upright.

However, the idea of detecting the distribution of the vapor deposition rate at the position corresponding to the surface of the substrate and adjusting the amount of deposition of the vapor deposition material discharged from each nozzle of the vapor deposition source is irrelevant to the transportation method, regardless of the method of transportation. The present invention is applicable to the method of transportation.

Further, in the above description, the organic electroluminescence device has been described by way of example, but it is also applicable to a film formation device and a film formation method which perform vapor deposition treatment in the same background as the organic electroluminescence device.

[Embodiment 2]

In the first embodiment, an example in which the substrate 6 is processed in each of the processing chambers 1bu in which vacuum deposition is performed is described. However, in the second embodiment, a pair of substrates is provided in the processing chamber 1bu. The holding means 82 processes the transfer of the lifting device between the substrates held by the one substrate holding means 82R and the other substrate holding means 82L, and the other substrates are placed to complete the position adjustment of the shield 81 and the substrate 6. The composition of the quantity is explained.

In the second embodiment, the difference from the first embodiment is inside the processing chamber 1bu, and the shield cover 81, the substrate holding means 82, the comb-shaped hand 94, and the substrate rotating means 93 are provided on the right R line and The point formed by the 2 systems of the L line on the left side.

The description of the portions overlapping with the first embodiment will be omitted, and the differences from the first embodiment will be described.

Fig. 8 is a view showing the outline of the configuration of the transport chamber and the processing chamber according to the second embodiment.

The configuration of the processing chamber differs depending on the processing contents. However, the processing chamber 1bu (hereinafter referred to as the processing chamber 201 in the second embodiment) in which the electroluminescent layer is formed by vacuum evaporation of the luminescent material will be described as an example. The transport robot 205 provided inside the transport chamber 202 has a mechanical arm 251 that can be rotated to the left and right, and a comb-shaped hand 252 for transporting the substrate is attached to the front end.

On the other hand, the inside of the processing chamber 201 is substantially provided with a vapor deposition source portion 71 which is vapor-deposited on the substrate 6 by evaporating the luminescent material, and the vapor deposition source portion 71 is formed along the substrate holding means 82R or 82L. The substrate 6 held in a vertical direction is driven in parallel with the substrate 6 in the upper and lower directions, and the lower portion of the substrate 6 is provided, and a necessary portion of the substrate 6 is used to evaporate the mask 81 of the luminescent material, and the substrate 6 is placed on the transport arm. The comb-shaped hand portion 94 between the five and the substrate 6 received by the comb-shaped hand portion 94 is erected, moved to the substrate rotating means 93 of the substrate holding means 82, and the L-line and the R-line are The driving portion 276 of the vapor deposition source portion 71 is moved along the rail 275. In addition, when vacuum vapor deposition is performed, the inside is maintained at a high vacuum of about 10-3 to 10-4 Pa via a vacuum exhaust pump (not shown).

However, although not shown in FIG. 8, the transfer chamber 202 and the processing chamber 201 are separated by a gate valve 10 that is openable and closed.

FIG. 9 is a view showing a relationship between the vapor deposition source portion 271 and the substrate 6 and the shield cover 81 which are held perpendicular to each other via the substrate holding means 282. Fig. 9(b) is a view taken from the direction of arrow B in Fig. 9(a). The vapor deposition source unit 71 is moved in the vertical direction along the pair of guide shafts 76 via the vertical drive means 72.

Further, as shown in FIG. 10, the vapor deposition source portion 71 is moved between the right and left alignment portions L and R along the rail 75 via the right and left driving means 74. In the middle of the movement path between the calibration portions L and R on the right and left sides of the evaporation portion 271, a film thickness monitor 220 is provided, and the detection surface 221 of the film thickness monitor 220 is held and held by the substrate holding means 82R or 82L. The surfaces of the vertical substrates 6 are set in the same plane. When the vapor deposition source portion 71 moves between the right and left alignment portions L and R along the rail 275 at a constant speed, the nozzles are arranged in a line-shaped vapor deposition source 71a-n at a constant speed. 73a to n are passed before the film thickness monitor 220, and the evaporation amount from each of the nozzles 73a to n is detected as a change in film thickness by the film thickness monitor 220, and the detected signal is transmitted to the control unit 250. .

In the control unit 250, the detection signal corresponding to the evaporation amount from each of the nozzles 73a to n detected by the film thickness monitor 220 is analyzed, and the state of evaporation from each of the nozzles 73a to n is inspected, and the detection signal can be specified in comparison with the others. The small nozzle 73 is compared with a reference level in which the detection signal levels from all the nozzles 73 are preset, and the amount of vapor deposition can be checked.

In the case where the nozzle 73x having a small detection signal is specified by the control unit 250, the position of the nozzle 73x of the vapor deposition source unit 71 is output to a display means (not shown).

Further, when the vapor deposition rate exceeds the reference range in comparison with the reference range set in advance in the detection signal level of all the nozzles 73, the control unit 250 performs monitoring to detect evaporation via the temperature sensor 71S. At the same time, when the amount of evaporation is equal to or less than the reference range, the control unit 50 monitors the temperature sensor 71S in the same manner. At the same time as the signal of the evaporation temperature, the voltage applied to the heater 71H of the vapor deposition source portion 71 is increased.

Further, in the configuration shown in FIG. 9(b), when the vapor deposition source 71a-n is divided into a plurality of sections, the heater 71H heated in each section and the temperature sensor 71S which detects the evaporation temperature are provided. In comparison with the reference range in which the detection signal levels from the respective nozzles 73a to 73 are set in advance, when the evaporation amount exceeds the reference range, the control unit 250 monitors the temperature sensor 71S via each section in each section. When the signal of the evaporation temperature is obtained and the voltage applied to the heater 71H in each section is controlled, the finer vapor deposition amount distribution can be controlled.

Furthermore, the control unit 250 can issue an alarm to the case where the detection signal level from each of the monitored nozzles 73a-n exceeds a predetermined reference level or falls below a predetermined reference level. The abnormality of the notification device is constituted by the practitioner.

That is, according to the present embodiment, in the first embodiment, as in the case described with reference to Figs. 6(a) to 6(c), the state in which the respective nozzles 73a to n are evaporated is improved, and the finerness can be improved. The control of the vapor deposition rate, that is, the uniformity of the film thickness distribution of the film formed on the substrate.

Fig. 11 is a flow chart showing the processing of the processing chamber 1 of the second embodiment. As a basic idea of the process of the present embodiment, as in the case of the first embodiment, the vapor deposition surface of the substrate is transported as the upper surface, and the substrate 6 transported on the upper surface is vertically erected and transported to the calibration unit 8. Perform evaporation. The lower surface of the substrate 6 during transport is a vapor deposition surface, and it is necessary to invert it. However, the upper surface is a vapor deposition surface, and it is only erected vertically.

Further, in the present embodiment, the time required for the vapor deposition process and the time required to complete the calibration after the substrate 6 is transferred to the processing chamber 1 are slightly the same, and in the present embodiment, each is about 1 minute. Therefore, as a basic idea of the present embodiment, in the other line, between the vapor deposition of one of the wires, the substrate to be processed is transported to a new substrate, and the position is adjusted to complete the vapor deposition. ready. When this processing is performed interactively, the standby time of the vapor deposition source can be shortened, and the material that does not need to be consumed during standby can be reduced.

Describe in detail the processing flow. First, in the R line, the substrate 6R is carried (S1101R), the substrate 6R is erected vertically, and moved to the aligning portion 8R (S1102R), and the position of the substrate 6 and the mask 81 is adjusted (S1103R). At this time, the position adjustment is performed immediately in the vertical direction, and the substrate 6 is transported by using the vapor deposition surface as the upper surface. The position adjustment is illuminated by a photographing means (not shown) such as a CCD camera as shown in the guide diagram of Fig. 8, and the calibration mark 84 provided on the substrate 6 is present at the center of the window 85 provided in the shield 81R. The ground is performed by controlling the shield cover 81R by the calibration drive unit 83R. The vapor deposition is, for example, a material that emits light into red (R). As shown in FIG. 3, a window is formed in a portion corresponding to the R of the cover 81M of the shield 81R, and the substrate 6 is a part of the vapor deposition under the window. . The size of this window is, for example, about 50 μm in width and 150 μm in height. The thickness of the cover 81M is 40 μm, and tends to be thinner in the future.

After the position adjustment is completed, the L-line side is placed on standby, and the vapor deposition source unit 71 covered by the shutter 274L is driven by the right and left driving means 276, and moves to the R line side along the rail 275 (S1101E). The vapor deposition source unit 71 moves between the L line side and the R line side at a constant speed, and passes through the respective nozzles 73a to 7a of the vapor deposition sources 71a to n arranged in a line at a position apart from the shutter 274L. When n passes through the front side of the film thickness monitor 220, the amount of evaporation from each of the nozzles 73a-n is changed as a film thickness, that is, the vapor deposition rate is detected by the film thickness monitor 220 (S1102E), and this detection is performed. The signal is transmitted to the control unit 250.

After the movement of the vapor deposition source unit 71 on the R line side is completed (S1103E), the control unit 250 checks whether or not there is an abnormality in the evaporation amount of each of the nozzles 73a to n and the whole (S1104E), and determines the cause for an abnormality. The clogging of the nozzles 73a-n or the application of a voltage abnormality of the heater 71H (corresponding to the control of the heater 71H) (S1105E), the application voltage of the heater 71H is applied to the case where the applied voltage of the heater 71H is abnormal. (S1106E), after moving the vapor deposition source from the R line side to the L line (S1107E), the process returns to S1101E again, and the vapor deposition source is moved from the L line side to the R line. On the other hand, in the case where the nozzles 73a to n are clogged, an alarm notification abnormality is issued (S1108E).

The position adjustment of the mask 81 and the substrate 6R is completed, and the inspection of the evaporation amount from each of the nozzles 73a to n via the film thickness monitor 220 is completed, and the nozzles 73a of the vapor deposition source unit 71 are placed at the standby position on the R line side. When nn is covered by the shutter 274R, if it is determined in S1104E that the vapor deposition rate is not abnormal, the vertical driving means 72 is driven to start the vapor deposition source unit 71 to continuously move upward (S1104R). The evaporating material 71Z is ejected from the respective nozzles 73a to n, and is vapor-deposited on the substrate 6R by the mask 81 to form a thin film (S1105R). The vapor deposition source portion 71 reaches the vicinity of the upper end of the pair of rails 276, and when the vapor deposition of the substrate 6R is completed, the movement above the vapor deposition source portion 71 is stopped (S1106R), and the upper end portion of the pair of guide shafts 76R is closed. Each of the nozzles 73a-n of the vapor deposition source unit 71 is in a state of being covered by the shutter 275R.

On the other hand, in the R line, in the vapor deposition, the same processing as in the (S1101R) to (S1103R) from the R line is performed in the L line. In other words, the other substrate 6L is carried (S1101L), the substrate 6L is erected vertically, and moved to the aligning portion 8L (S1102L), and the position adjustment with the shielding cover 81L is performed (S1103L).

The deposition of the substrate 6R of the R-line is completed, and the vapor deposition source unit 71 that waits at the upper end of the pair of guide shafts 76 confirms whether or not the position adjustment of the substrate 6L and the calibration unit 8L is completed, and is driven by the drive unit 276. The rail 275 is moved to the L line side (S1108E), and the front surface (the surface on which the nozzles 73a to n are provided) is covered by the shutter 275L. Here, when moving from the R line side to the L line side, the vapor deposition source portion 71 waits at the upper end portion of the pair of guide shafts 76, and does not pass the respective nozzles 73a via the film thickness monitor 220. Check the evaporation of ~n. Further, the shutters 275R and 275L are not separated, but may be formed by one continuous body. In this case, the vapor deposition source unit 71 is moved from the R line side to the L line side in a state where the surface (front surface) on which the nozzles 73a to 73 are provided is covered by the shutter.

Then, the vapor deposition source portion 71 that has reached the L line side is driven by the vertical driving means 72, and starts to move downward (S1104L), and the evaporation material 71Z that evaporates from the coating portion passing through the shutter 275L is ejected from each nozzle. 73a to n are discharged to the inside of the processing chamber 1, and are deposited on the substrate 6L by the mask 81 to form a thin film (S1105L). The vapor deposition source portion 71 reaches the vicinity of the lower end of the pair of rails 276, and the substrate 6L is completed. At the time of vapor deposition, the movement to the lower side of the vapor deposition source portion 71 is stopped (S1106L), and the nozzles 73a to n of the vapor deposition source portion 71 are covered by the shutter 274L at the lower end portions of the pair of guide shafts 76. Stand by.

On the other hand, in the case where the vapor deposition source unit 71 has finished moving to the L line side, it is confirmed that the operation from the processing chamber 1 of the substrate 6R is started (S1107R). Thereafter, the new base 6R' is carried (S1108R), the base 6R' is erected vertically, and moved to the aligning portion 8R (S1109R), and the position of the substrate 6R' and the shield 81R is adjusted (S1110R).

After that, the above process is repeated. According to the present embodiment, in addition to the movement time of the vapor deposition source portion 71, the vapor deposition material 71Z is not used arbitrarily, and a vapor deposition film can be formed on the substrate. In the present embodiment, as long as the necessary vapor deposition time and the time of the substrate for the processing chamber are released and the calibration is performed, the moving time of the vapor deposition source portion 71 is taken as 5 seconds as about 1 minute. In the method of mounting one substrate, the case where the unnecessary vapor deposition time which does not contribute to the vapor deposition of the substrate is 1 minute can be shortened to 5 seconds in the present embodiment.

Further, according to the present embodiment described above, as shown in FIG. 11, the processing cycle of the substrate 6 in the processing chamber 1 is substantially the time during which the vapor deposition time and the moving time of the vapor deposition source portion 71 are substantially increased. Improve productivity. When the processing time is evaluated under the above-described conditions, it is 1 minute and 5 seconds in the present invention for 2 minutes in which only one substrate can be mounted, and the productivity equivalent to one of the processing chambers 1 can be improved by about 2 times. .

[Example 3]

In the first to third embodiments, the embodiment in which the horizontal transfer and the vertical film formation are advantageous in processing a large-sized substrate has been described, but in the following, it is shown in the film formation of the medium-shaped substrate. The combination of horizontal transport and horizontal film formation.

Fig. 12 is a view showing an example of a configuration of an organic electroluminescence device manufacturing apparatus 300 for horizontal film formation according to the present invention. The device form is a general group device and is a well-known configuration. The configuration of the present invention is shown below.

The organic electroluminescent device manufacturing apparatus 300 of FIG. 12 is connected to a loading interlocking vacuum chamber 331a, a receiving chamber 304a-c, or a processing chamber to the periphery of the polygonal transfer chambers 302a-c. The device configuration of 301a-1 to f-2. The transport chambers 302a-c are attached to the center thereof, and the transport robot arms 305a-c are disposed. The transport robot arms 305a-c take out the substrate 61 placed in the load lock vacuum chamber 331a or the reception chambers 304a-c or the process chambers 301a-1 to f-2, and place a new additional substrate 61.

The reception rooms 304a-c are used to receive the substrate 61 between adjacent groups. Among the processing chambers 301a-1 to f-2, a film forming process by vacuum vapor deposition is performed on the substrate 61 to be processed. A gate valve 310 is provided between each of the chambers constituting the group, and the degree of vacuum can be maintained in each chamber. In the load lock chamber 331, there is a function of closing the gate valve 310, switching the environment of the substrate 61 to be transferred from atmospheric pressure to vacuum, or switching from vacuum to atmospheric pressure. In the film forming process, each of the processing chambers 301a-1 to f-2 and each of the transport chambers 302a to cc maintains a vacuum of 10-3 to 10-5 Pa by a vacuum pump (not shown).

When the gate valve 310 provided in the processing chambers 301a-1 to f-2 is closed, the gas generated in each of the processing chambers 301a-1 to f-2 can be prevented from being propagated to the other processing chambers 301a during the film forming process. The purity of the film produced at the time of 1~f-2 is lowered. In addition, in the maintenance, the specific film forming chambers 301a-1 to f-2 or the transport chambers 302a to cc are individually opened to the atmosphere, and the time required to restore the state of the entire device 300 after maintenance is required. The suppression is minimal.

The processing chambers 301a-1 to f-2 are configured by taking the processing 301a-1 for forming an organic layer as an example.

FIG. 13 illustrates an example of the internal structure of the transport chambers 302a-c and the processing chambers 301a-1 to f-2 according to the third embodiment, and an example of the transport chamber 302a and the processing chamber 301a-1 will be described. As shown in Fig. 13, in the present embodiment, in addition to the film thickness monitor 319 which performs the fixed-point observation of the vapor deposition source 371, the upper side of the vapor deposition source 371 is provided so that the length direction of the vapor deposition source 371 can be made on the line. Scanned film thickness monitor 320.

The transport robot 305a provided inside the transport chamber 302a has a robot arm 351a that is rotatable and telescopic, and a comb-shaped hand 352a for transporting the substrate is attached to the front end.

On the other hand, the processing chamber 301a-1 has a receiving mechanism for receiving the substrate 61 from the transport robot 305a, a mask 381, a masking mechanism for the shield 381 and the substrate 61, and heats the organic vapor deposition material at a high temperature. The gasification is carried out, and the gas flow 375 which forms the vapor deposition material 371Z with directivity is formed, and is sprayed on the lower surface of the substrate 61 to form a vapor deposition source 371 which is formed.

When the transport robot arm 305a is transported into the substrate 61 to the film forming chamber 301a-1, the comb-shaped hand 352 of the holding substrate 61 is inserted into the hook 387, the transport arm 351 is lowered, and the substrate 61 is delivered to the peripheral portion of the substrate. The hook 387 retracts the comb-shaped hand 352. When the comb-shaped hand 352 is inserted, the hook 387 is raised to receive the substrate. When the substrate 6 is received, the hook 387 is lowered, and the hook 387 or the mask is optically detected while the calibration mark 6A on the substrate and the alignment mark 381A on the mask are optically detected in a state close to the substrate 61 and the mask 381. The 381 performs a jog to adjust the position. After the position adjustment is completed, the hook 387 is lowered, and the substrate 61 is placed on the mask 381. Further, the hooks 387 are retracted, pulled out, and spaced from the mask 381. At this time, when the guide groove 381 has the groove of the hook 387, the thickness of the claw of the hook 387 is increased, and the correspondence with the large substrate 61 is facilitated. The mask 381 is provided with a cover 381M and a frame 381F, and a calibration mark 381A is formed.

The vapor deposition source 371 is in the form of a so-called line source extending in the vertical direction in the direction of the gas 375 ejecting the vapor deposition material 371Z, and the nozzle 373 of the discharge port of the gas flow 375 is the length of the evaporation source 371. In terms of direction, multiple settings are made on the line. This nozzle is not a circle or a hole arranged on a line as shown in Fig. 14 (a) and (b), but one or a plurality of slits as shown in Fig. 14 (c) and (d) may be provided. In addition, as shown in FIG. 14(f), in the case where the vapor deposition source 371 in the form of the gas flow 375 of the vapor deposition material is supplied from the nozzle 373 provided at each of the small vapor deposition sources 371a to 371, the preparation is plural. The small vapor deposition sources 371a-n, if arranged on a line, can achieve the same effect. The respective nozzles 373 of the vapor deposition sources 371a to 371 are placed at a specific interval in the state of the substrate 61, and are parallel to the substrate 61, and are vaporized in a right-angle direction by the reciprocating movement in the longitudinal direction of the vapor deposition source 371. The plating source moving mechanism 372 scans at a specific speed, and forms a thin film of a vapor deposition material for the entire surface of the substrate 61.

The entire device 300 including the transport chamber 302, the processing chamber 301, the transport robot 305, the reception chamber 304, and the vapor deposition source 371 is controlled by the control unit 350.

As shown in FIG. 13 and FIG. 15, the moving mechanism 372 of the vapor deposition source 371 moves the vapor deposition source 371 along the pair of guide rails 372L, and is mounted on the vapor deposition source via the drive motor 372M provided on the atmosphere side. The evaporation source 371 of the susceptor 378. The vacuum rotary introduction mechanism 372S having the magnetic fluid holding the vacuum degree sealed inside is disposed on the wall surfaces 301a to 1w of the processing chamber 301a-1, and the rolling spiral 372P is rotated via the rotation axis on the vacuum side. Both ends of the rotary rolling screw 372P are supported by a support plate 376 having a bearing. The vapor deposition source base 378 on which the vapor deposition source 371 is mounted is connected to the nut 372K of the rotary rolling screw 372P and the guide 372G that guides the pair of guide rails 372L, and is rotated by the rotation of the rotary rolling screw 372P. The 371 system performs a linear motion along the guide rail 372L to form a scan film that can be reciprocated.

With the above-described mechanism, after the substrate 61 is scanned and formed by reciprocating the vapor deposition source 371, the vapor deposition source 371 is evacuated, and the substrate 61 is peeled off from the mask 381, and the transport robot 305a is again transported. The film is transported to another processing chamber 301 to perform a film forming process. First, in the case where the substrate 61 is placed on the mask 381, the hook 387 is hung to raise the substrate 61. Further, the transport robot 305 inserts the comb-shaped hand 352a into the lower portion of the substrate 61, and raises the robot arm 351a to the receiving substrate 61. Instead of raising the robot arm 351a, the hook 387 is lowered, and the substrate 61 may be separated from the comb-shaped hand 352a. Further, after the substrate is hung by the hook 387, the function of raising the comb-shaped hand 352a of the transport robot 305a may be performed, and the substrate 61 may be received.

In the case where the vapor deposited film is formed on the substrate 61 by the method described above, the temperature control in the longitudinal direction of the vapor deposition source 371 cannot be lacked in order to ensure the uniformity of the film thickness. As shown in Fig. 15, the vapor deposition source 371 is divided into a plurality of heating control blocks 371B in the longitudinal direction for heating control. For the heating control block 371B, each heater 371H is provided. The crucible 371C in which the vapor deposition material 371Z is placed is accommodated inside the vapor deposition source 371, and the crucible 371C and the vapor deposition material 371Z filled therein are heated and vaporized by the energization of the heater 371H. The vapor deposition source 371 has a temperature-detecting thermocouple 371S, and the temperature output of the control device 350 detected by the temperature sensor 371S is controlled to a specific processing temperature. The temperature sensor 371S may also be provided with one of the specific heating control blocks 371B or each of the heating control blocks 371B.

In the case where the temperature sensor is provided in each of the heating control block 371B, the power supply to the heater 371H is adjusted so that the respective heating control blocks are at the same temperature. In general, the end portion of the vapor deposition source 371 in the longitudinal direction causes heat radiation, and the temperature is predicted to decrease as compared with the central portion. Therefore, the power supplier of the heater 371H for the heating control block 371B on both sides is set in advance in the center portion in the longitudinal direction of the vapor deposition source 371, and the temperature of the entire vapor deposition source 371 is made uniform.

In addition, in the case where the temperature sensor 371S is provided in the specific heating control block 371B, for example, in the case where the temperature sensor 371S is provided in the central heating control block 371B of the vapor deposition source 371, the central heating is performed in advance. The heater 371H of the control block is supplied with power at a fixed ratio or a constant value on the side of the heater 371H of the peripheral portion. The temperature uniformity in the longitudinal direction of the vapor deposition source 371 is generally measured in addition to the temperature-adjusted temperature sensor 371S, and the temperature sensor is attached to each part of the vapor deposition source 371, and based on the result, The addition and subtraction increase the amount of power supplied to each heater 371H, and the temperature is uniformized.

As a means for measuring the gas release rate, a film thickness monitor 320 of a quartz oscillator 326 type is used. This is for the quartz oscillator 326 which cools the gas flow 375 of the vapor deposition material 371Z discharged from the vapor deposition source 371, and the surface of the quartz oscillator 326 is detected to form a film of the vapor deposition material, from which the quartz oscillator 326 is generated. The change in the number of quartz oscillation frequencies is read in the film thickness of the vapor deposition material attached per unit time.

Usually, the film thickness monitors 320A and B are fixed to the end portion of the vapor deposition source 371 which is not obstructed by film formation, or the vapor deposition source 371 is moved to the retracted position W (in FIG. 13, there is a vapor deposition source 371). In the case of the case, it is detectably fixed to the side of the processing chamber 301a-1. Further, the distance between the nozzles 373 of the vapor deposition source 371 and the quartz oscillators 326A1-3 and B1-3 of the film thickness monitors 320A and B, the directivity of the sensor depends on the detected value.

In order to prevent the vapor deposition material from adhering to the periphery of the quartz oscillators 326A1-3 and B1-3, the lids 319A and B are covered, and the vapor deposition material discharged from the vapor deposition source 371 is detected for good directivity. The film thickness monitor 320B that monitors the amount of evaporation from each nozzle is configured such that the upper surface of the quartz oscillator 326B1-3 is covered by a cylindrical magnetic shield 328. Further, since each of the quartz oscillators 326A1-3 and B1-3 has an individual difference, it cannot be used between the film thicknesses at the time of scanning and the correction without being corrected. The film thickness measurement accuracy of the lift film thickness monitors 320A and B is formed on the substrate 61 under specific conditions, and after the substrate is taken out, the film thickness is measured from a measuring instrument such as an ellipsometer to calculate a correction. The processing of the coefficients is necessary. After that, when the correction coefficient is multiplied by the value detected from the film thickness monitors 320A and B, the distribution of the evaporation rate of the vapor deposition material 371Z or the vapor deposition rate can be measured with high accuracy.

As an embodiment of the present invention, as shown in FIG. 13, the vapor deposition source 371 is fixed to the first film thickness monitor 320A, and is moved together with the vapor deposition source 371 during vapor deposition, and is often used in vapor deposition. The amount of evaporation from the vapor deposition source 371 is monitored, and the second film thickness monitor 320B is placed in the processing chamber 301a-1. In the second film thickness monitor 320B, the gas flow 375 of the vapor deposition material 371Z does not reach the retracted position W of the vapor deposition source 371 of the substrate 61, and faces the quartz oscillator 326 toward the nozzle 373 of the vapor deposition source 371 (refer to Figure 15).

The second film thickness monitor 320B is retracted by the vapor deposition source 371, and is scanned by the moving mechanism 317 in the longitudinal direction of the vapor deposition source 371 to read the vapor deposition rate of the vaporized material discharged from each nozzle 373. The distribution is set. Similarly to the reciprocating mechanism of the vapor deposition source 371, two linear guides 321 are provided on the processing chamber 301a-1 side so as to be parallel to the row of the nozzles 321 of the vapor deposition source 371, and move along the columns of the nozzles 373. The second film thickness monitor 320B.

Outside the processing chamber 301a-1, a motor 324M is provided to rotate a vacuum rotary introduction mechanism 324S having a magnetic fluid seal that maintains a vacuum density, and is rotated to connect the rolling screw 324P supported by the pair of support members 322. The rolling screw nut 324K and the guide mechanism 325 of the linear guide are connected to the second film thickness monitor 320B, and the second film thickness monitor 320B performs scanning measurement in the longitudinal direction of the vapor deposition source 371 via the rotation of the motor 324M. .

Conventionally, after film formation on the substrate 61, the film thickness on the substrate 61 is measured by a film thickness measuring machine or a step measuring device in the longitudinal direction of the vapor deposition source 371, and the film thickness is not greatly different from the others. At a location, the heater 371H of each heating block 371B of the evaporation source 371 is adjusted. However, since the distribution of the vapor deposition rate of the vaporized vapor deposition material 375 discharged from each nozzle 373 of the vapor deposition source 371 cannot be measured, even if the singularity of the film thickness can be detected, which heating control block 371B is affected It is difficult to judge, and it is difficult to adjust the uniformity of the film thickness, and it takes a lot of time.

On the other hand, according to the present invention, as in the related art, the discharge rate of the vaporized material of the vaporized material in a specific portion is constantly monitored, and not only the temperature control of the vapor deposition source 371 but also the evaporation source 371 can be measured. The distribution of the evaporation rate of the vapor deposition material discharged from each nozzle 373. Therefore, the power supply to the heater 371H in the heating control block 371B of the heating evaporation source 371 is adjusted based on the measurement of the distribution of the evaporation rate of the vapor deposition material discharged from each of the nozzles 373 of the evaporation source 371. The state may be controlled in accordance with a curve in which the vapor deposition material gas discharged from each nozzle 373 of the vapor deposition source 371 is released, or a desired release rate.

In the film thickness monitors 320A and B, in general, when a sudden temperature change occurs, water measurement is often performed because of measurement errors. However, when the scanning of the second film thickness monitor 320B is started, the heat radiation from the vapor deposition source 371 is suddenly received, and the measurement error via the temperature change is likely to occur. Therefore, when scanning the second film thickness monitor 320B, the author stops at a position where the gas flow 375 of the vapor deposition material is started, and the scanning of the second film thickness monitor 320B is started after the temperature is stabilized. Control of the drive mechanism 317. As described above, the distribution of the deposition rate of the vapor deposition material that can be vaporized in the longitudinal direction of the vapor deposition source 371 can be accurately measured by the distribution of the second film thickness monitor 320B from the adjacent nozzle 373. Since 375 is incident on the quartz oscillator 326, it is difficult to accurately measure the discharge rate of the vaporized vapor deposition material in a local range or in each of the nozzles when correct device diagnosis is performed. Therefore, as shown in FIG. 15, the quartz crystal oscillator 326 of the second film thickness monitor 320B is covered by the cylindrical magnetic shield 328, and has directivity with respect to the second film thickness monitor 320B. As a result, the gas flow 375 of the vapor deposition material incident from the inclined surface emitted from the adjacent nozzle can be eliminated, and the vaporized material of vaporization in the longitudinal direction of the vapor deposition source 371 can be more accurately measured in the unit of the nozzle 373 or in a partial range. Release rate.

An example of the above measurement results is shown in Figs. 16(a) to (c). In this example, in the case where all of the nozzles 373 of the vapor deposition source 371 have the same deposition rate of the vapor deposition material, a uniform film can be obtained for the substrate. When the periphery of the quartz oscillator 326 of the second film thickness monitor 320B is covered by the cylindrical magnetic shield 328, the nozzle 373 of the vapor deposition source 371 is in the shape of a hole, and the quartz oscillator 326 comes to the front of the nozzle. The rate of detection is peaking. It is preferable to adjust the scanning speed. If it is confirmed whether or not there is a passing quartz oscillator 326 on the front surface of the nozzle 373, it is possible to grasp which hole of the nozzle 373 corresponds to the peak of each nozzle 373. If it is normal, as shown in Fig. 16(a), the waveform of the same height can be repeatedly measured. Fig. 16(b) shows a state in which the amount of evaporation from the heating control block 371B is lowered. Further, Fig. 16(c) shows a state in which the discharge of one of the nozzles is blocked and the amount of the vapor deposition material is lowered.

However, in the above embodiment, the arrangement of the hole-shaped nozzles 373C as shown in Fig. 14 (a) or (b) is premised, but in the form of a groove as shown in Fig. 14 (c) or (d). In the nozzle 373S, the measured value of the observed rate is a graph shown in Figs. 17(a) to (c). If it is normal, as shown in Fig. 17(a), in addition to the end portion, a certain value is detected regardless of the position. .

On the other hand, for a part of the heating control block, the supply of the heater power is unpredictable, as shown in Fig. 17 (b), the film thickness monitoring for the position of the overheat control block corresponding to the occurrence of the defect is shown. The output of the device produces a rate reduction. Further, in a portion of the groove 373S of the vapor deposition source 371, clogging occurs, and as shown in Fig. 17 (c), a small rate decrease occurs in one portion of the film thickness monitor output.

Further, as shown in FIG. 14(e), the porous material 379 may be coated on the upper surface of the vapor deposition source 371, and the porous material 379 may be discharged to the vapor deposition material on the vacuum chamber side to form a film. In the application example of the distribution measurement result of the vapor deposition rate of the vaporized vapor-deposited material in the longitudinal direction or the alignment direction of the nozzle 373, the nozzle in the form of a hole as shown in Fig. 14 (a) or (b) will be used. The detection of 373 is premised, but in the case of a nozzle in the form of a groove as shown in Fig. 14 (c) or (d), the same processing can be performed by setting the sampling position in advance and performing evaluation. As a result of measuring the distribution of the vapor deposition rate of the vaporized vapor deposition material in the longitudinal direction or the alignment direction of the nozzle 373, it is applied to the heater control, and conventionally, the film is applied to the substrate, and the heater 371H is applied. By supplying power adjustment, it is not necessary to add a film to the substrate, but it is possible to install the unit and perform it automatically and more accurately.

For example, the rate of evolution of vaporized vapor deposition material 371Z at various portions of the nozzles of a particular heating control block is partially reduced, and excess conditions are often produced in continuous crops. In the initial state, even if the temperature of each of the heating control blocks 371B of the vapor deposition source 371 is balanced, the state of consumption of the vapor deposition material 371Z inside the vapor deposition source 371 in the continuous crop, and the storage of the crucible 371C The contact state changes, and the vaporization state of the vapor deposition material changes. In the past, it was necessary to form a film and measure the film thickness to detect such a state.

In the present invention, since the state can be automatically checked, the power supply amount of the heater 371H corresponding to the heating control block 371B is adjusted and adjusted, and the vapor deposition source is scanned again on the second film thickness monitor 320B. 371, feedback can be performed by confirming in detail whether or not the form of the discharge rate distribution of the vaporized vapor-deposited material is digested. If the above-described algorithm is automatically determined, the algorithm for adjusting the adjustment is added to the control means 350 of the apparatus, and the thickness of the substrate 61 can be automatically maintained in the apparatus to uniformly conduct the electric power to the heaters 371H of the vapor deposition source 371. Supply control.

Next, a method of confirming the vapor deposition rate performed before the vapor deposition of the substrate 61 is performed will be described with reference to FIG.

First, the vapor deposition source 371 is moved to the retracted position (S1801), and then, at the retracted position, the second film thickness monitor 320B is moved to a nozzle array direction of the vapor deposition source 371 at a constant speed, and gas from each nozzle is detected. The amount of vapor deposition material released (S1802). Next, the control unit 350 obtains a match between the position of the nozzle 373 of the vapor deposition source 371 and the measured value from the relationship between the movement time of the film thickness monitor 320B and the peak value of the detected value (S1803), and heats each of the vapor deposition source 371. The block unit is controlled to obtain a peak average of the amount of discharge from each nozzle 373 (S1804). Next, the average value of the heat release amount of each nozzle 373 from the heating control block for heat conduction control is used as a reference, and the average value of the heat release amount of each nozzle 373 from each heating block is compared (S1805), and the difference is exceeded. The allowable amount is checked for the presence or absence of the heating block (S1806), and if the difference exceeds the allowable amount, it is determined that the large heating block lowers the heater power of the overheated block (S1807), and the step from S1802 is repeated again.

On the other hand, if the difference is not exceeded, the next difference is the allowable amount, and the presence or absence of the heating block is checked (S1808). If the difference exceeds the allowable amount, it is determined that the small heating block is increased. The heater power of the overheated block (S1809) repeats the step from S1802 again. When the difference between the reference value and the reference value is determined to be within the allowable range for all the heating blocks, it is determined to be normal (S1810), and the operation is ended.

In the above, it is assumed that the width of the vapor deposition source 371 in the longitudinal direction is sufficiently long compared to the width of the substrate 61. In this case, the evaporation rate of the vapor deposition material from which nozzle 373 is vaporized must be the same peak. . However, as for the width of the substrate 61, the amount of protrusion of the vapor deposition source 371 is relatively short. For the film thickness uniformity on the substrate 61, the nozzles 373 from both ends of the vapor deposition source 371 are also considered. The release rate of the vapor deposition material gas to be released is higher than that of the central portion, and it is normal. The outline detection example of the above detection system in which the vapor deposition material gas is released in this case is shown in Figs. 19(a) and (b).

Fig. 19 (a) shows the results of monitoring the evaporation state of the vapor deposition source 371 from the nozzle having the pore shape as shown in Fig. 14 (a) or (b). Further, Fig. 19(b) shows the results of monitoring the evaporation state of the vapor deposition source 371 from the nozzle having the slit shape as shown in Fig. 14 (c) or (d). Such a profile can be obtained by raising the heating temperature at the end portion, adding the nozzle 373, making the nozzle 373 large-diameter, or shortening the length of the nozzle 373. In such an example, in the case where the release rate of the partially vaporized vapor deposition material gas is increased or decreased, the state can be maintained by the automatic temperature control. In order to achieve this, the discharge rate distribution of the vapor deposition material vaporized under the power supply condition for the film on the substrate 6 to be uniform in the heating control block 371B is set as the reference profile, and then The discharge rate of the vapor deposition material gas discharged from each nozzle 373 may be adjusted.

On the other hand, as a result of scanning by the second film thickness monitor 320B, in the case of the nozzle 373 in which the vaporization rate of the vaporized material is extremely reduced, or the vaporization of the local vaporization in the heating control block 371B In the case where the material release rate is lowered, it is suspected that the vapor deposition material is clogged with the nozzle 373 for some reason.

In the case of confirming such a state, in the adjustment of the supply power to the heater, the rate of vaporization of the vaporized material that is vaporized does not recover, and an alarm is issued to the device manager from the viewpoint of preventing defective manufacturing, or It is preferable to perform disposal of a substrate or the like that stops receiving the film forming chamber. In addition, when the above-described determination is performed on the control unit 350, the function of automatically preventing defective manufacturing can be realized.

The processing flow of the above operation will be described using FIG.

First, the vapor deposition source 371 is moved to the retracted position (S2001), and then, at the retracted position, the second film thickness monitor 320B is moved to the nozzle array direction of the vapor deposition source 371 at a constant speed, and the gas from each nozzle is detected. The amount of vaporized material released (S2002). Next, the control unit 350 obtains a match between the position of the nozzle 373 of the vapor deposition source 371 and the measured value from the relationship between the movement time of the film thickness monitor 320B and the peak value of the detected value (S2003), and obtains the source from the vapor deposition source 371. The peak value of the amount of discharge of each nozzle 373 is averaged (S2004). Then, the reference value is set based on the average value of the discharge amount from each nozzle 373 (S2005), and the discharge amount from each nozzle 373 is compared with the reference value and the average value, and the presence or absence of the nozzle whose check difference exceeds the preset allowable value is checked. (S2006), and the case where the difference is completely below the allowable value is judged to be normal (S2007), and the operation is ended.

On the other hand, in the case where there is a nozzle having a difference of the allowable value or more, it is determined that the steps from S2002 to S2006 are repeated several times (S2008), and if the number of repetitions is n or less times set in advance, the process returns to step S2002. , the steps to S2006 are performed. If the number of times of the steps from S2002 to S2006 is repeated n times, there is a case where the difference is the allowable value or more, and it is determined that the nozzle is clogged (S2009), and the substrate 61 located in the processing chamber 301 is excluded and closed. The gate valve 310 of the processing chamber 301 is made to prohibit the receiving of the substrate (S2010), and an alarm is generated (S2011) to end.

As described above, the measurement data of the distribution rate of the vapor deposition material 371Z in the longitudinal direction of the vapor deposition source 371 is measured on one substrate 61 per film, and data can be stored before or after the start of construction. Therefore, when a defect occurs, it can also be used as a specific quality management material for the cause of the project.

In the above embodiment, the gas flow 375 generated from the nozzle 373 of the vapor deposition source 371 does not reach the retracted position W of the substrate 61, and the vapor deposition source 371 is moved to measure the vaporization of the vaporization source 371 in the longitudinal direction. The distribution of the release rate of the plating material. However, even if the vapor deposition source 371 is not moved to the retracted position W, an openable and closable means equivalent to the shutter shown in FIG. 5 is provided between the substrate 61 and the vapor deposition source 371, such as preventing evaporation of the material for the substrate 61. The same effect can be obtained by the arrival of the airflow 375.

Next, in the third embodiment, the steps of monitoring the film thickness monitors 320A and 320B while predicting their lifetimes and sequentially repeating the operations performed on the vapor deposition of the substrate 61 will be described with reference to FIG. 21.

First, as a preparation work before the vapor deposition of the substrate 61. Do the following.

First, the deposition rate of the vaporized vapor deposition material discharged from each nozzle of the vapor deposition source 371 is measured by the film thickness monitor 320A that is linked to the vapor deposition source 371 (S2101). Next, the vapor deposition source 371 is driven at a specific speed, and a thin film is formed on the sample substrate by vapor deposition (S2102).

Next, the film formed on the sample substrate was measured to obtain an average value of the film thickness (S2103). The correction coefficient α of the film thickness monitor 320A is calculated (number 1) based on the average of the deposition rate of the vapor deposition material measured in S1201 and the film thickness obtained in S2103 (S1104), and the α is calculated using the same. The value is corrected by the film thickness monitor 320A (S2105), and the vapor deposition source 371 is moved to the retracted position (S2106).

[Number 1]

Next, at the retracted position, the film thickness monitor 320B scans the vapor deposition source 371, and detects the amount of vapor deposition material vaporized from each nozzle (S2107), and the vaporization of the vaporized material from each nozzle is vaporized. The peak value of the amount (S2108). Next, using the calculated peak average value of the amount of vapor deposition material vaporized from each nozzle and the discharge rate of the vapor deposition material of the corrected film thickness monitor 320A, the film thickness monitor is calculated using (number 2) 320A is used as the reference correction coefficient β (S2109), and the corrected thickness coefficient β is used to correct the film thickness monitor 320B (S2110).

[Number 2]

In the above, the preparation work before the vapor deposition of the substrate 61 is started.

Next, vapor deposition for the actual substrate 61 is started.

When vapor deposition material is deposited on the detection surface of the quartz crystal oscillator 326 of the film thickness monitors 320A and 320B of the monitor for performing film thickness in the vapor deposition of the substrate 61 or the vapor deposition, the quartz oscillator 326 is deposited. The crystal oscillation frequency is decreased. The film thickness monitors 320A and 320B convert the change in the crystal oscillation frequency per unit time into a film formation rate, and the film thickness and the change in the crystal oscillation frequency are used in the range in which the linear shape changes. Therefore, before the lower limit of the range of the linearity change is exceeded, the lifespan of the film thickness monitors 320A and 320B is predicted, and the film thickness monitors 320A and 320B are exchanged before the life time is reached, but the film thickness defect is not present. It is important to continue production without reducing productivity.

Therefore, after the vapor deposition of the substrate 61 is started, the quartz oscillation frequencies of the film thickness monitors 320A and 320B are detected, and the lifetimes of the film thickness monitors 320A and 320B are predicted from the number of frequencies (S2121), and it is judged whether or not the life is approaching (S2122). In the case where any of the film thickness monitors 320A and 320B has a sufficient life, the vapor oscillation frequency of the film thickness monitors 320A and 320B is detected at S2121, and the vapor deposition is repeated.

On the other hand, when it is determined that the life is approaching, it is judged that both of the film thickness monitors 320A and 320B will reach the life at the same time, or both of them will reach the life (S2123), and it is determined that the film thickness monitors 320A and 320B are At the same time, both of them will reach the end of life. First, the detected value before the film thickness monitor 320B (S2131) is replaced with the quartz oscillator 326 of the film thickness monitor 320A (S2132).

Then, the film thickness monitor 320A of the quartz oscillator 326 is replaced, and the rate of vaporization of the vaporized vapor deposition material discharged from each nozzle of the vapor deposition source 371 is measured (S2133), and is calculated by the following (number 3). The new value of the correction coefficient α of the film thickness monitor 320A (S2134) is corrected by the film thickness monitor 320A (S2135).

[Number 3]

Then, the corrected film thickness monitor 320A is used to return to S2122, vapor deposition on the substrate 61 is performed, and the number of crystal oscillation frequencies of the film thickness monitors 320A and 320B is detected, and the film thickness monitor 320A is predicted from the number of frequencies. The life of the 320B. As a result, when it is determined in S2123 that the life of one of the film thickness monitors is approaching, it is determined which film thickness monitor (S2141) is determined to be the film thickness monitor 320A, and the above S2131 to S2135 are executed. The steps up to that.

On the other hand, when it is determined that the life of the film thickness monitor 320B is near, the detected value before the film thickness monitor 320A is stored (S2142), and the quartz oscillator 326 of the film thickness monitor 320B is replaced (S2143). Then, the film thickness monitor 320B of the quartz oscillator 326 is replaced, and the rate of vapor deposition of the vaporized material discharged from each nozzle of the vapor deposition source 371 is measured (S2144), and is calculated by the following (number 4). The film thickness monitor A is used as a new value of the correction coefficient β of the film thickness monitor 320B (S2146), and the film thickness monitor 320B is corrected (S2147).

[Number 4]

Then, using the corrected film thickness monitor 320B, the process returns to S2122, vapor deposition on the substrate 61 is performed, and the number of crystal oscillation frequencies of the film thickness monitors 320A and 320B is detected, and the film thickness monitor is predicted again from the number of frequencies. The life of 320A and 320B, the processing of the repeating substrate 61 is simultaneously performed.

In the configuration shown in Fig. 15, the discharge rate of the vaporized vapor deposition material 371Z in the longitudinal direction or the arrangement direction of the nozzle 373 of the vapor deposition source 371 is measured in the first film thickness monitor 320A fixed to the vapor deposition source 71371. Between the second film thickness monitors 320B of the distribution, the vapor deposition source 371 is shown in the crop, and the automatic correction is performed with higher precision than in the past.

In the case of the continuous continuous vacuum vapor deposition apparatus, as shown in FIG. 15, the measurement of the first and second film thickness monitors 320A and B is performed using the quartz oscillator 326. Each of the film thickness monitors 320A and 320B has a plurality of quartz oscillators 326. The plurality of quartz oscillators 326A-1 to 3 and 326B1 to 3 are fixed to the respective turntables 329A or B. The quartz oscillators 326A-1~3 and 326B1~3 are electrically connected to the film thickness monitors 320A and 320B at the measurement positions, and the number of transmission frequencies of the quartz oscillators 326A-1 to 326 and 326B1 to 3 is measured.

When the vapor deposition material is deposited on the detection surfaces of the quartz oscillators 326A-1~3 and 326B1~3, the number of quartz oscillation frequencies decreases. The film thickness monitors 320A and 320B convert the change in the number of quartz oscillation frequencies per unit time into a film formation rate. In the film thickness monitors 320A and 320B, the film thickness and the change in the number of crystal oscillation frequencies are used in the range in which the linear shape changes, and in the vicinity of the lower limit of the range, the rotary table is switched to mount another quartz oscillator. 326A-1~3 and 326B1~3.

In general, in the configuration of the film thickness monitor, the film thickness is measured and the film thickness measurement is performed. The quartz oscillators 326A-1~3 and 326B1~3 are slightly different in their linearity, but they still have individual differences. Therefore, in the past, in order to precisely control the film thickness, it is necessary to form a film on the substrate and correct all the crystal oscillators 326A-1 to 3 and 326B1 to 3, and it takes time for the program.

In the present embodiment, it is necessary to correct the film thickness monitors 320A and 320B of the measurement data of the film thickness deposited on the substrate 61 at least once at the start of vapor deposition, but it is not necessary for the continuous cropping. Correction is performed for the additional film of the substrate 61.

First, the temperature setting for forming the vapor deposition source 371 is performed. Thereafter, the vapor deposition source 371 is scanned at a specific scanning speed, and a film formation process is performed on the substrate 61. The film thickness adhering to the substrate 61 was measured while recording the evaporation rate of the first film thickness monitor 320A which was operated in conjunction with the vapor deposition source 371 at this time. Further, the ratio of the evaporation rate measurement value of the first film thickness monitor to the film thickness actually adhered to the substrate is different from the specific reference value, and the correction is multiplied by the correction coefficient (material stability) and the evaporation is measured. The value of the rate. However, in the case of changing the scanning speed, the material stability may be obtained from the ratio of the film thickness to the scanning speed for the evaporation rate.

Next, when the vapor deposition source 371 is scanned, the second film thickness monitor 320B that distributes the vapor deposition material 371Z in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source 371 is scanned. The average of the release rates of the vaporized vapor deposition material 371Z. Then, the ratio of the corrected correction to the first film thickness monitor 320A is obtained. In the case where the deviation occurs between the two, the correction coefficient is obtained and adjusted to a specific value.

In the above two operations, the second film thickness monitor 320B is first corrected, and the first film thickness monitor 320B may be corrected based on the second film thickness monitor 320B.

In the continuous crop, in the case where the first or second film thickness monitors 320A and 320B are close to the use limit of the quartz oscillators 326A-1 to 3 and 326B1 to 3 which are close to each other, the switching is close to the use limit. The quartz crystal oscillators 326A-1 to 3 and 326B1 to 3 of the film thickness monitors 320A and B are corrected based on the measurement results before the switching of the other film thickness monitors 320A and B, and can be stopped for a short period of time without stopping production. And correct with high accuracy.

It is assumed that, for the case where the first or second film thickness monitors 320A, 320B are simultaneously close to the use limit, for example, the first film thickness monitoring of the quartz film oscillators 326A-1~3 and 326B1~3 is switched earlier. After the quartz crystal oscillators 326A-1 to 3 of the device are switched, the quartz oscillators 326B-1 to 3 of the second film thickness monitor are switched and corrected.

In the present embodiment, an application example of the present invention is shown for the vapor deposition treatment in the manufacturing process of the organic electroluminescence display device. According to the present embodiment, not only the film but also the vapor deposition treatment of the metal film exhibits the same effect. Further, in addition to the organic electroluminescence display device, the same effect can be obtained by the manufacturing process of the organic electroluminescence illumination device using the vapor deposition process for the large-area substrate.

Further, in the above-described embodiments, an example in which an organic vapor deposited film is formed on a substrate by vacuum vapor deposition has been described. However, the present invention is not limited thereto, and a vapor deposited film other than the organic film, for example, a metal thin film, The formation of a film of an inorganic material or a film may also be applied.

[Example 4]

In the third embodiment, the case where the substrate 61 carried into the processing chamber 301a is one piece is described as an example. As shown in FIG. 22, in the processing chamber 401, two substrates are placed in the horizontal direction in the processing chamber 401, and an embodiment having two film forming positions R and L is shown below. Further, in Fig. 23, the processing chamber 401 and the transport robot 405 are shown in detail. The configuration of the processing chamber 401 of the present embodiment is basically the same as that described with reference to FIGS. 13 and 15 described in the third embodiment, but two film forming positions are provided inside one processing chamber 401. R and L differ in the point at which the vapor deposition source 471 is moved therebetween. The transport robot 405 in the vacuum is usually a telescopic or rotating robot arm, and three upper and lower actor, for example, in a processing chamber 401a, a film arrangement position R and L arranged in parallel is arranged, and the substrate 62 is placed. In the direction of the telescopic direction of the transport robot arm 405, when the substrate 62 is not inclined, the two substrates 62 are not arranged in parallel. As shown in FIGS. 22 and 23, in the processing chamber 401a, two substrates are arranged side by side, and in the receiving room 402a, before the transport robot 405 receives the substrate 62, the specific amount of the substrate 62 is tilted at the hand. When the substrate 62 is received by the 452, the telescopic direction of the robot arm 451 that transports the robot arm 405 is held obliquely. When the substrate 62 is placed in the processing chamber 401a, the two substrates 62 are arranged in parallel. 404a~c is the reception room.

In the example shown in FIGS. 22 and 23, in the first film formation position R of the processing chamber 401a, one of the substrates 62 is scanned with the vapor deposition source 471 and formed into a film of a vapor deposition material having a specific film thickness. Film formation. At the same time, in the second film formation position L of the processing chamber 401a, the processed substrate 62 is transported via the transport robot 405, transported to the unprocessed substrate 62, and the position of the substrate 62 and the shield 481 is adjusted, and the substrate 62 is transferred. Standby is performed in a state of being overlapped with the mask 481 and being calibrated.

The structure of the vapor deposition source 471 has the same structure as that described in the third embodiment with reference to Fig. 15 .

After the film formation at the first film formation position R is completed, the vapor deposition source 471 is moved to the retracted position W, and the gas flow 475 in which the vapor deposition material is formed does not directly contact the substrate 62 or the mask 481. Further, the vapor deposition source 471 is moved from the film formation position R to the film formation position L. The details of the moving means of the vapor deposition source 471 at the retracted position W at this time are shown in Fig. 24. In the case where the two film forming positions R and L are in a positional relationship parallel to the scanning direction, at the vapor deposition source retracting position W, The vapor deposition source 471 is moved in the longitudinal direction of the vapor deposition source (in a direction perpendicular to the scanning direction).

When the vapor deposition source 471 reaches the retracted position W, the linear guide 489 is coupled to the moving mechanism constituted by the rolling screw 492P and the moving member 491 by the guide pin 490. In this state, the rolling scroll 492 is rotated by the vacuum rotation introducing mechanism 492S by the motor 492M provided outside the processing chamber 401, and the vapor deposition source 471 coupled with the moving member 491 and the guide pin 490 is in the longitudinal direction. The film is moved from the film formation position R to the film formation position L, and is steamed from the vapor deposition source pedestal 478A of the vapor deposition source 471 provided at the film formation position R to the vapor deposition source susceptor 478B provided at the film formation position L. The plating source 471 slides along the guide groove 479 to replace the placement position.

The moving mechanism of the vapor deposition source 471 is an example, and the same effect can be obtained, and it can be any configuration.

In this way, since the film formation of the substrate is performed in the case where the two film formations are not alternately processed, the wasteful time can be eliminated, and the productivity of the vapor deposition source is increased, thereby increasing the use efficiency of the expensive vapor deposition material. In particular, the film formation time is longer than the time required for the substrate to be carried in and out, and the calibration of the substrate and the cover is long. This is a useless time, and only the movement time of the vapor deposition source is shortened.

As described above, when the vapor deposition source 471 is moved, the second film thickness monitor 420B that distributes the deposition rate of the vapor deposition material vaporized in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source 471 is When it is provided in the movement path from the film formation position R of the vapor deposition source 471 to the film formation position L, the distribution of the vapor deposition material vaporization material in the longitudinal direction or the arrangement direction of the nozzle of the vapor deposition source can be measured. In this case, the second film thickness monitor 420B may be fixed to the side of the processing chamber 410 near the middle of the two film formation positions R and L. As a result, in the same manner as in the third embodiment, the distribution rate of the vapor deposition material 471Z of the vaporized material 471Z in the longitudinal direction or the arrangement direction of the nozzle 473 of the vapor deposition source 471 can be measured.

Next, in the fourth embodiment, the processing procedure for confirming the vapor deposition rate before the vapor deposition start is described with reference to FIG.

First, the vapor deposition source 471 is moved to the retracted position (S2701), and then, at the retracted position, the vapor deposition source 471 is moved at a constant speed to the position facing the second film thickness monitor 420B to the length direction of the nozzle. The amount of vaporized material to be vaporized from each nozzle is detected (S2702). Next, the control unit 450 obtains a match between the position of the nozzle 473 of the vapor deposition source 471 and the measured value from the relationship between the movement time of the film thickness monitor 420B and the peak value of the detected value (S2703), and heats each of the vapor deposition source 471. The block unit is controlled to obtain a peak average of the amount of discharge from each nozzle 473 (S2704). Next, the average value of the discharge amount of each nozzle 473 from the heating control block for heat conduction control is used as a reference, and the average value of the discharge amount of each nozzle 473 of each heating block is compared to obtain a difference (S2705). Exceeding the preset allowable value, check the presence or absence of the heating block with a large discharge amount (S2706), and if there is a heating block with a large discharge amount for the difference exceeding the allowable value, reduce the heater power of the heating block (S2707) ), repeat the steps from S2702 again.

On the other hand, if the difference is beyond the allowable amount, it is judged that there is no large heating block, and then the difference is exceeded, and the presence or absence of a small heating block is checked (S2708). When it is determined that the heating block is small, the heating power of the heating block is increased (S2709), and the step from S2702 is repeated again. When the difference between the reference value and the reference value is determined to be within the allowable range for all the heating blocks, it is judged to be normal (S2710), and the operation is ended.

However, in the above example, the case where the two film formation positions are parallel to the scanning direction is shown, but as shown in FIG. 25, the two film formation positions are arranged in the scanning direction (X direction) with the vapor deposition source 471. In the same direction, the retracted position W of the vapor deposition source 71471 is provided between the film formation positions R and L. In this case, as shown in FIG. 26, a moving mechanism 425 that is coupled to the rolling screw 424P driven by the motor 424M by the vacuum rotation introducing mechanism 429S is provided on the second film thickness monitor 420B side, and is moved by The robot arm 426 supported by the mechanism 425 holds the film thickness monitor 420B, and when the film thickness monitor 420B is moved along the vapor deposition source 471 stopped at the standby position W by driving the rolling screw 424P by the motor 424M. The evaporation rate of each part of the nozzle 473 of the evaporation source 471 can be monitored. In FIGS. 25 and 26, the same components as those described in FIG. 23 are denoted by the same reference numerals, and the description thereof will be omitted.

In the present embodiment, an example in which the substrate is processed in parallel is shown. However, when the substrate is transported into the ‧ or the substrate and the cover are adjusted in position, the film formation time is long, and three or more sheets are processed in parallel. can. In this case, the second film thickness monitor 420B may be provided between the respective film formation positions. In addition, when a film thickness monitor 420A that moves with the vapor deposition source 471 and performs fixed-point observation frequently, when a plurality of film thickness monitors 420A and 420B are used, it is necessary to perform correction between the film thickness monitors, and the measurement result is unified. . In this case, any one of the film thickness monitors 420A and 420B provided at the retracted position W of the vapor deposition source 471 may be corrected based on any one of them.

In the same manner as in the first embodiment, the power supply to the heater is adjusted in the same manner as in the first embodiment, and the length direction or arrangement direction of the nozzle 473 of the vapor deposition source 471 can be adjusted. The distribution rate of the gasification vapor deposition material 471Z is controlled to be lowered, and it can be used for judging material or quality management for observing nozzle clogging.

The present invention may be embodied in other specific forms without departing from the spirit and essential characteristics. The present invention is to be considered in all respects as illustrative and not restrictive, and the scope of the invention All changes within it are therefore contemplated to be covered.

100. . . Organic electroluminescent device manufacturing device

1,201,301a-1~f-2,401. . . Processing room

2a~d, 202, 302a~c. . . Shipping room

3. . . Bearer group

4a~e, 304a~e. . . Receiving room

5a~d, 305a, 405. . . Transport robot

6,6R,61,62. . . Substrate

8R. . . Calibration department

10,310. . . gate

20,220,319. . . Film thickness monitor

24,276. . . Drive department

26,326. . . Quartz oscillator

28. . . Detection surface

40. . . Vacuum wiring and piping mechanism

41. . . First link

42. . . 2nd link

50,250. . . Control device

71. . . Evaporation source

71a~n, 371, 471. . . Evaporation source

71S. . . Temperature sensor

71H. . . Heater

71Z. . . Evaporating material

72. . . Upper and lower drive

72C. . . Rotating part

72M, 492M, 424M. . . Drive motor

73a~n, 373, 473. . . nozzle

75,275. . . guide

74,274L. . . Switch

76P, 492P. . . Rolling spiral

76. . . Guide shaft

81,81R,381,481. . . Shield

81M, 373. . . Cover

82,282. . . Substrate retention means

83,83R. . . Calibration drive

6A, 81A, 84. . . Calibration mark

85. . . window

93. . . Substrate rotation means

94,352a. . . Comb hand

271. . . Evaporation department

331a. . . Loading interlocking vacuum chamber

351. . . Transport robot

371Z, 375, 471Z. . . Evaporating material

372,425. . . Mobile agency

372P. . . Nut

372S, 429S. . . Vacuum rotary introduction mechanism

378,478B. . . Evaporation source base

387. . . Hook

489. . . Linear guide

490. . . Guide pin

420A. . . First film thickness monitor

420B. . . Second film thickness monitor

Fig. 1 is a schematic block diagram showing an apparatus for manufacturing an organic electroluminescence device.

Fig. 2 is a view showing a schematic view and an operation of a configuration of a transport chamber and a processing chamber in the first embodiment of the present invention.

Figure 3 is a diagram showing the mask.

Fig. 4 is a view showing the positional relationship between a vapor deposition source, a substrate, and a film thickness monitor in the first embodiment of the present invention.

Fig. 5 is a view showing the positional relationship between a vapor deposition source, a film thickness monitor, and a shutter in the first embodiment of the present invention.

Fig. 6 is a graph showing an example of the output of the film thickness monitor.

Fig. 7 is a flow chart showing the operation of the vapor deposition process of the substrate in the first embodiment of the present invention.

Fig. 8 is a view showing a schematic view and an operation of a configuration of a transport chamber and a processing chamber in a second embodiment of the present invention.

Fig. 9 is a view showing the positional relationship between the vapor deposition source, the substrate, and the film thickness monitor in the second embodiment of the present invention.

Fig. 10 is a view showing the positional relationship between the left and right vapor deposition positions and the vapor deposition source, the substrate, and the film thickness monitor in the second embodiment of the present invention.

Fig. 11 is a flow chart showing the operation of the vapor deposition process of the substrate in the second embodiment of the present invention.

Fig. 12 is a view showing a schematic view and an operation of a configuration of a transport chamber and a processing chamber in a third embodiment of the present invention.

FIG. 13 is a schematic perspective view showing a configuration of a chamber inside the processing chamber of the group forming film apparatus according to the third embodiment of the present invention, and means for detecting a state in which the vapor deposition material gas of each nozzle of the vapor deposition source is discharged.

Fig. 14 is a view showing an example of a nozzle form of a vapor deposition source having a nozzle disposed on a line of a vapor deposition source in a third embodiment of the present invention.

Fig. 15 is a cross-sectional view showing the schematic configuration of means for detecting the discharge state of the vapor deposition material gas of each nozzle of the vapor deposition source in the third embodiment of the present invention.

Fig. 16 is a view showing an example of a detection result obtained by means of means for detecting the state of discharge of the vapor deposition material gas of each nozzle in the third embodiment of the present invention. In the example in which the shielding plate is surrounded by the film thickness monitor, a graph showing an example of a normal situation and an abnormality is displayed, and a map corresponding to the heater is attached.

Fig. 17 is a view showing an example of a detection result obtained by means of means for detecting the state of discharge of the vapor deposition material gas of each nozzle in the third embodiment of the present invention. In the example in which the shielding plate is not surrounded by the film thickness monitor, a diagram showing an example of a normal situation and an abnormality is attached, and a map corresponding to the heater is attached.

Fig. 18 is a flowchart showing the operation of the heater control when the information obtained by the means for detecting the discharge state of the vapor deposition material gas of each nozzle is obtained in the third embodiment of the present invention. The display film thickness monitor side is an example of moving the state in which the vapor deposition material gas of each nozzle is moved.

FIG. 19 is a view showing an example of a detection result obtained by means of a means for detecting a state in which a vapor deposition material gas of each nozzle is in a state in which a nozzle of a vapor deposition source is in a hole shape or a slit shape in the third embodiment of the present invention. The chart shows the attached map corresponding to the heater.

Fig. 20 is a view showing an operation flow for detecting the clogging of the nozzle of the vapor deposition source and outputting an alarm from the information obtained by the means for detecting the discharge state of the vapor deposition material gas of each nozzle in the third embodiment of the present invention. An example in which the vapor deposition source side is a state in which the vapor deposition material gas of each nozzle of the movement detection is released is displayed.

Fig. 21 is a flow chart showing the operation of the method of arranging the quartz oscillators in the third embodiment of the present invention.

Fig. 22 is a block diagram showing a schematic configuration of a device for performing film formation on a substrate in a horizontal state in the fourth embodiment of the present invention.

Fig. 23 is a view showing the movement of a vapor deposition source for detecting a film formation state of a substrate held in a horizontal state in the fourth embodiment of the present invention, and a vapor deposition material gas of each nozzle of the vapor deposition source; The means of releasing the state is related to the oblique view. In the figure, the vapor deposition source is scanned in a direction perpendicular to the direction in which the substrates are arranged.

FIG. 24 is a view showing a fourth embodiment of the present invention, in which a nozzle for a vapor deposition source is formed by scanning a vapor deposition source in a direction perpendicular to the substrate array direction and maintaining a film in a horizontal state. A plan view of means for discharging the vapor deposition material gas.

Fig. 25 is a view showing a modification of the fourth embodiment of the present invention, for detecting the movement of the vapor deposition source for the film formation of the substrate held in the horizontal state, and the vapor deposition of each nozzle of the vapor deposition source; An oblique view of the means of the release state of the material gas. In the figure, the vapor deposition source is scanned in the same direction as the substrate array direction.

Fig. 26 is a view showing a modification of the fourth embodiment of the present invention, in which a nozzle for a vapor deposition source in which a vapor deposition source is scanned in a substrate array direction and a deposition source is formed in a substrate in a horizontal state; A plan view of means for discharging the vapor deposition material gas.

Fig. 27 is a flow chart showing the operation of the heater control in the information obtained by means of the means for detecting the discharge state of the vapor deposition material gas of each nozzle in the fourth embodiment of the present invention. An example in which the vapor deposition source side is a state in which the vapor deposition material gas of each nozzle of the movement detection is released is displayed.

371H. . . Heater

371B. . . Heating control block

Claims (18)

A vacuum vapor deposition apparatus which is a vapor deposition apparatus for depositing a vapor deposition material vaporized by heating in a vacuum evacuation treatment chamber, and comprising: a substrate holding means for holding a substrate; and gasification vapor deposition a material that is discharged from the nozzle and has a long-shaped vapor deposition source in one direction; and moves at least one of the substrate holding means for holding the vapor deposition source or the substrate in a direction perpendicular to a direction in which the vapor deposition source is long a first moving means; a detecting means for detecting a discharge rate of the vapor deposition material from the vapor deposition source; and a direction (length) of at least one of the vapor deposition source or the detecting means and the vapor deposition source a second moving means that moves in parallel with the direction; and a control means for controlling the substrate holding means and the vapor deposition source, the first moving means, the detecting means, and the second moving means; and controlling the aforementioned by the control means The second moving means moves at least one of the detecting means or the vapor deposition source, and measures the longitudinal direction of the discharge rate of the vapor deposition source Cloth. The vacuum vapor deposition device according to claim 1, wherein the vapor deposition source has a long shape in one direction and has a plurality of heating means. The vacuum vapor deposition device according to the first or second aspect of the invention, wherein the control means controls at least one of the substrate holding means or the vapor deposition source, and the vapor deposition source is performed by the detecting means When measuring the distribution of the long one direction of the discharge rate, the vapor deposition material discharged from the nozzle of the vapor deposition source does not reach the position of the substrate held by the substrate holding means, and the substrate is relatively moved. Means and the aforementioned vapor deposition source. The vacuum vapor deposition device according to the first aspect or the second aspect of the invention, wherein the substrate holding means and the vapor deposition source further comprise an opening and closing device that is movable relative to the vapor deposition source And the shielding means, wherein the detecting means is configured to detect the distribution of the deposition rate of the vapor deposition source in the longitudinal direction, and to cover the front side or the side of the nozzle of the vapor deposition source Set it up. The vacuum vapor deposition device according to the first or second aspect of the invention, wherein the detecting portion of the detecting means is a quartz oscillator, and a cylindrical or plate-shaped shielding plate is provided around the detecting portion. The vacuum vapor deposition device according to the first or second aspect of the invention, wherein the substrate holding means holds the substrate to be erected vertically, and at least one of the substrate holding means or the vapor deposition source is The film is formed on the substrate in the vertical direction or in the vertical direction in the case of scanning in a right angle direction. A vacuum vapor deposition device is a vacuum vapor deposition device having a vacuum vapor deposition portion for forming a thin film on a surface of a substrate to be processed by vacuum deposition in a vacuum chamber in which a gas is evacuated and maintained in a vacuum state. And a vapor deposition source that discharges a vapor deposition material vaporized by heating in the vacuum chamber by a plurality of nozzles disposed on the wire; and a substrate holding means for holding the processing substrate; and a substrate to be processed held by the holding means, a driving means for relatively scanning the direction in which the vapor deposition source is disposed on the line, and a scanning direction in the direction of the right direction; and the nozzle included in the vapor deposition source One or a plurality of adjacent nozzles are used as a group, and a means for detecting the individual discharge rate of the vapor deposition material discharged from each group of the nozzles is detected. The vacuum vapor deposition device according to the seventh aspect of the invention, wherein the vacuum deposition unit includes the substrate holding means and the driving means in two groups, and further includes transferring the vapor deposition source to the two groups The vapor deposition source transfer means between the driving means arranges the detecting means on the transfer system path by the vapor deposition source transfer means to transfer the vapor deposition source between the two sets of driving means. The vacuum vapor deposition device according to the seventh aspect of the invention, wherein the processing substrate is in a state in which the surface is covered by the mask when the film is formed by vapor deposition, and the substrate is held by the substrate holding means. . The vacuum vapor deposition device according to claim 7 or 8, wherein the vacuum vapor deposition unit includes a plurality of vacuum vapor deposition units, and the substrate to be processed is transported to the plurality of vacuum vapor deposition units in a vacuum environment. The means of the intercourse. The vacuum vapor deposition device according to claim 7 or 8, wherein the detecting means for detecting a discharge rate of the vapor deposition material by vaporization is provided, and detecting any one of the groups from the nozzles When the discharge state of the vapor deposition material is abnormal, an abnormality information output means for outputting information on the abnormality is output. The vacuum vapor deposition device according to claim 7 or 8, wherein the vapor deposition material is controlled by using information on a deposition rate of the vapor deposition material of each of the nozzles detected by the detection means. Control means. The vacuum vapor deposition device according to claim 7 or 8, wherein the vapor deposition source includes a plurality of heating units that can be individually controlled, and corresponds to a group of the respective nozzles detected by the detecting means. The release rate is used to individually control the aforementioned plurality of heating units. A vacuum vapor deposition method is a first vacuum vapor deposition unit that is connected to a vacuum chamber that is internally evacuated and maintained in a vacuum state, and forms a thin film on the surface of the substrate to be processed covered with the mask by vapor deposition. The vacuum vapor deposition method in which the substrate for forming the film is delivered to the second vacuum vapor deposition unit from the first vacuum deposition unit in a vacuum-maintaining environment, and is processed in the second vacuum deposition unit. In the first vacuum deposition unit, before the vapor deposition film is formed on the substrate to be processed, the vapor deposition source is placed at the standby position, and the plurality of nozzles and the second detection means disposed on the vapor deposition source line are disposed. Scanning in a relative manner, detecting a release rate of the vapor deposition material from each nozzle of a plurality of nozzles disposed on a line of the vapor deposition source, and placing the processing substrate on the mask by the mask Depositing a plurality of nozzles on the line of the source, discharging the vapor deposition material in the vacuum chamber, and arranging the vapor deposition source along the substrate to be processed on the line When the nozzle arrangement direction is relatively moved in the direction of the right angle, the vapor deposition film is formed on the substrate to be processed by the mask, and when the vapor deposition film is formed on the substrate to be processed, the first detection means is detected. The state in which the vapor deposition material is discharged from the vapor deposition source. The vacuum vapor deposition method according to claim 14, wherein the first vacuum vapor deposition unit includes two groups: means for holding the substrate, and driving the vapor deposition source relative to the substrate. The second detecting means detects a plurality of lines from the line disposed on the vapor deposition source by transferring the vapor deposition source to a transfer system path between means for relatively driving the vapor deposition sources of the two groups. The rate at which the vapor deposition material of each nozzle of the nozzle is released. The vacuum vapor deposition method according to claim 14 or 15, wherein the abnormality information of the abnormality information is output when the discharge rate of the vapor deposition material is detected and the release state of the vapor deposition material is abnormal. The means of output. The vacuum vapor deposition method according to claim 14 or 15, wherein the vapor deposition source is controlled by using the information on the vapor deposition material release rate of each of the plurality of nozzles detected as described above. The vacuum vapor deposition method according to claim 17, wherein the vapor deposition source includes a plurality of heating units that can be individually controlled, and the plural number is individually controlled in accordance with a state in which the nozzles are detected by the detecting means. The heating part.