JP2015069858A - Crystal sensor unit and organic el manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crystal sensor unit capable of stably cooling crystal sensors even when there exists a variation due to individual difference of the crystal sensors, and an organic EL manufacturing device.SOLUTION: A crystal sensor unit comprises a plurality of crystal sensors, and one crystal sensor among the crystal sensors measures a film thickness. The crystal sensor unit includes: a cooling water pump to flow a fluid to the crystal sensor unit to be cooled; a cooling water pump control unit to adjust a flow rate of the fluid to be flowed to the cooling water pump; and a temperature regulator which measures the temperature of the crystal sensor and, when the temperature is outside of a predetermined temperature range, instructs the flow rate to be flown to the cooling water pump to the cooling water pump control unit.

Description

  The present invention relates to a crystal sensor unit and an organic EL manufacturing apparatus using the crystal sensor unit. In particular, it relates to cooling of a crystal sensor unit and an organic EL manufacturing apparatus.

  As a technique for forming a thin film on an object to be processed (hereinafter referred to as a substrate), many methods such as a vacuum evaporation method, a sputtering method, and a CVD method, in which a material to be deposited in a vacuum chamber is evaporated to form a thin film, are put into practical use. Has been. Among these, in the vacuum vapor deposition method, vapor deposition material stored in a crucible of an evaporation source provided in a vacuum vapor deposition chamber is heated together with the crucible by a heating device such as a heating wire, and vaporized or sublimated vapor of vapor deposition material ( The vapor is sprayed from a deposit outlet portion such as a vapor deposition nozzle of the crucible and deposited on the substrate.

In general, a vapor deposition apparatus using such a vacuum vapor deposition method places importance on making the film thickness of a material deposited on a substrate uniform. For this reason, a film thickness monitor such as a crystal sensor unit is used to manage the film to be formed on the substrate at a predetermined deposition rate.
The crystal sensor unit measures the film thickness by utilizing the fact that the vibration frequency of the crystal sensor decreases due to the weight of the deposited material attached to the crystal sensor (quartz crystal resonator). Usually, as the frequency of the crystal sensor decreases, the deposited film thickness also increases.
The crystal sensor unit described in Patent Document 1 is disposed inside the cover together with the sensor rotation motor. This cover is provided with cooling means. As a cooling means, a cooling coil line is provided inside the cover so as to cover at least one region of the crystal sensor unit. Cooling water is injected into the cooling coil line. Since the cooling water rotates uniformly along the cooling coil line, the thermal damage of the crystal sensor is reduced.

  A conventional cooling system for a crystal sensor unit will be described with reference to FIGS. FIG. 6 is a graph showing an example of temperature characteristics of the crystal sensor, and FIG. 7 is a block diagram showing a configuration example of a cooling system of a conventional crystal sensor unit.

The graph of FIG. 6 shows the frequency tolerance (unit: [1 × 10 ⁻⁶ ]) with respect to the temperature of the crystal sensor using the temperature (unit: [° C.]) on the horizontal axis and the frequency tolerance on the vertical axis. Yes.
As shown in FIG. 6, when the temperature is from minus 40 [° C.] to 0 [° C.], the frequency tolerance increases in a curve. From 0 [° C.] to 60 [° C.], the frequency tolerance decreases, and when it exceeds 60 [° C.], the frequency tolerance increases in a curve.
At this time, in the range from 10 [° C.] to 50 [° C.], the frequency tolerance decreases almost linearly. Therefore, when the crystal sensor 110 is used in the range of 10 [° C.] to 50 [° C.], the frequency tolerance can be changed linearly. This range from 10 [° C.] to 50 [° C.] is referred to as a constant speed control temperature range.

The conventional cooling system 211 of the crystal sensor unit 21 in FIG. 7 cools the crystal sensor unit 21 composed of a plurality of crystal sensors. 7 includes a crystal sensor unit 21 including a crystal sensor 110, a temperature sensor 160, a temperature controller 121, a cooling water pump 150, and an inverter unit 141. However, FIG. 7 shows only the crystal sensor 110 currently in use (film thickness monitor).
In FIG. 7, the temperature sensor 160 is a thermocouple, for example, measures the temperature of the crystal sensor 110 that is measuring (in use) the film thickness, and outputs the measured temperature information to the temperature controller 121. The temperature controller 121 determines whether or not the temperature of the crystal sensor 110 being used is within the constant speed control temperature range, and outputs an alarm if the temperature is outside the constant speed control temperature range. Inverter unit 141 controls cooling water pump 150 so as to rotate at a predetermined rotational speed. That is, the inverter unit 141 outputs a control signal for adjusting the flow rate of the cooling water passing through the cooling water pump 150. The inverter 140 incorporates a constant speed control signal that causes the cooling water of the cooling water pump 150 to flow at a constant flow rate.
The cooling water pump 150 rotates at a predetermined rotation speed according to the control of the inverter unit 141 and circulates the cooling water in the crystal sensor 110.
Further, the temperature controller 121 includes an external output terminal 170 for outputting the measurement result of the temperature of the crystal sensor 110 during film thickness measurement (in use) to the outside.

The crystal sensor 110 in use measures the film thickness during vacuum deposition. In the inverter unit 141, the cooling water pump 150 rotates at a predetermined number of rotations determined in advance, and a predetermined amount of cooling water circulates in a cooling pipe (cooling coil line) (not shown) that always passes through the crystal sensor unit 21. Thus, the cooling water pump 150 is controlled. The cooling water pump 150 receives the control signal from the inverter unit 141 and rotates at a predetermined rotation number, and circulates the cooling water to cool the crystal sensor 110.
The temperature sensor 160 measures the temperature of a predetermined location of the crystal sensor 110 that is in use, and outputs the measured temperature information to the temperature controller 121. The temperature controller 121 determines whether or not the temperature of the crystal sensor 110 in use is within a predetermined constant speed control temperature range from the input temperature information. If the temperature of the crystal sensor 110 in use is within a predetermined constant speed control temperature range, the temperature controller 121 does nothing or outputs a signal indicating that it is normal from the external output terminal 170. The external device is, for example, a display device that displays a normal or abnormal warning, for example, an alarm that emits sound or light.

JP2013-108106A

As described above, the crystal sensor described in Patent Document 1 and FIGS. 6 and 7 is cooled by circulating cooling water through the crystal sensor. By being cooled, thermal damage can be reduced.
However, it is not always possible to keep the crystal sensor in a certain temperature range simply by circulating the cooling water in the crystal sensor.
Usually, a crystal sensor unit uses a plurality (for example, 12) of crystal sensors one by one in order to extend the usage time.
Now, there is variation in the characteristics of individual crystal sensors, and it is conceivable that the frequency allowable deviation cannot be changed linearly even within the above-mentioned predetermined constant speed control temperature range. The cooling effect is also the same. Therefore, even if the cooling water pump is controlled to rotate at a predetermined rotational speed for use within a predetermined constant speed control temperature range, it cannot be maintained within the predetermined temperature range, and a normal vapor deposition rate cannot be maintained. There is a risk that it cannot be maintained.
In view of the above problems, an object of the present invention is to provide a crystal sensor unit and an organic EL manufacturing apparatus capable of stably cooling a crystal sensor against variations due to individual differences among crystal sensors. is there.

  In order to achieve the above object, the crystal sensor unit of the present invention is composed of a plurality of crystal sensors, and one of the crystal sensors is a crystal sensor unit for measuring a film thickness, and a fluid is supplied to the crystal sensor unit. A cooling water pump for flowing and cooling, a cooling water pump control unit for adjusting a flow rate of fluid flowing to the cooling water pump, and measuring the temperature of the crystal sensor, and when the temperature is out of a predetermined temperature range, A first feature is that it has a temperature controller that instructs the flow rate to flow to the cooling water pump to the cooling water pump control unit.

  In the crystal sensor unit of the first feature of the present invention, the second feature of the present invention is that the crystal sensor measured by the temperature controller is a crystal sensor currently being monitored for film thickness.

  In the crystal sensor unit of the first feature or the second feature of the present invention, the predetermined temperature range is a temperature range in which the frequency tolerance of the crystal sensor can be linearly changed. The third feature.

  In the crystal sensor unit of the first feature or the second feature of the present invention described above, a fourth feature of the present invention is that the predetermined temperature range is 10 degrees Celsius or more and 50 degrees Celsius or less.

  Moreover, in order to achieve said objective, the organic electroluminescent manufacturing apparatus of this invention makes the vapor deposition material for manufacturing an organic electroluminescent element a vapor | steam, and the evaporation source which injects in order to adhere the said vapor | steam to a to-be-processed object And a crystal sensor unit for measuring a film thickness of the vapor deposition material attached to the object to be processed, wherein the crystal sensor unit cools the crystal sensor unit by flowing a fluid. A cooling water pump, a cooling water pump control unit that adjusts a flow rate of a fluid that flows to the cooling water pump, and a temperature of the crystal sensor, and when the temperature is out of a predetermined temperature range, the cooling water pump control And a temperature controller that instructs the flow rate to flow to the cooling water pump with respect to the unit.

  In the organic EL manufacturing apparatus according to the fifth aspect of the present invention, the crystal sensor measured by the temperature controller of the crystal sensor unit is a crystal sensor currently being monitored for film thickness. Features.

  In the organic EL manufacturing apparatus according to the fifth or sixth aspect of the present invention, the predetermined temperature range is a temperature range in which the frequency tolerance of the crystal sensor can be linearly changed. The seventh feature is as follows.

  In the organic EL manufacturing apparatus according to the fifth or sixth feature of the present invention, the predetermined temperature range is 10 degrees Celsius or more and 50 degrees Celsius or less.

  ADVANTAGE OF THE INVENTION According to this invention, the crystal sensor unit which can cool a crystal sensor stably also with respect to the dispersion | variation by the individual difference of a crystal sensor is realizable. As a result, the film thickness can be measured accurately and stably, so that an organic EL manufacturing apparatus capable of manufacturing an organic EL element with improved quality can be realized.

It is a figure which shows embodiment of the organic electroluminescent manufacturing apparatus to which the vapor deposition apparatus of this invention is applied. It is the schematic diagram and operation | movement explanatory drawing of a structure of the vacuum conveyance chamber in FIG. 1, and a vacuum evaporation chamber. It is a figure which shows the structure of the control part 40 of FIG. It is a block diagram which shows one Example of a structure of the cooling system of the crystal sensor unit of this invention. It is a flowchart for demonstrating one Example of the cooling operation | movement procedure of the crystal sensor unit of this invention. It is a graph showing an example of the temperature characteristic of a crystal sensor. It is a block diagram which shows the structural example of the cooling system of the conventional crystal sensor unit. It is process drawing which shows one Example of the manufacturing process of the organic electroluminescent manufacturing apparatus in this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
Moreover, the following description is for describing one embodiment of the present invention, and does not limit the scope of the present invention. Accordingly, those skilled in the art can employ embodiments in which these elements or all of the elements are replaced with equivalent ones, and these embodiments are also included in the scope of the present invention.
In the description of each drawing, components having the same function are given the same reference numerals including those in FIGS. 6 and 7 describing the prior art, and the description will be omitted as much as possible to avoid duplication.

  FIG. 1 is a diagram showing an embodiment of an organic EL manufacturing apparatus to which the vapor deposition apparatus of the present invention is applied. FIG. 1 shows an embodiment of an organic EL manufacturing apparatus of the present invention, and further shows an organic EL manufacturing apparatus 100 that realizes alignment and vapor deposition in the same vacuum vapor deposition chamber 1. The organic EL manufacturing apparatus 100 is a cluster type in which a polygonal vacuum transfer chamber 2 having a vacuum transfer robot 5 at the center and a substrate stocker chamber 3 and a vacuum deposition chamber 1 as a film forming chamber are arranged radially around the periphery. It has the structure of the organic EL manufacturing apparatus. Each vacuum deposition chamber 1 includes a substrate holding unit 9 that holds a substrate 6 and a mask 8. In addition, a gate valve 10 is provided between the vacuum deposition chamber 1 and the substrate stocker chamber 3 and the vacuum transfer chamber 2 to isolate the vacuum from each other. Switch. Reference numeral 40 denotes a control device that controls the components of the organic EL manufacturing apparatus 100.

  FIG. 2 is a schematic diagram and an operation explanatory diagram of the configuration of the vacuum transfer chamber 2 and the vacuum deposition chamber 1 in FIG. The vacuum transfer robot 5 shown in FIG. 2 has a two-link structure arm 57 that is movable up and down (not shown) and that can turn left and right. Have

On the other hand, the vacuum deposition chamber 1 includes a substrate holding unit 9 that holds the substrate 6 carried in from the vacuum transfer robot 5, an evaporation source 7 that evaporates a deposition material for forming the light emitting layer and forms a film on the substrate 6, Evaporation source scanning means 43 for moving the evaporation source 7 in the vertical direction, and a mask 8 for defining a deposition pattern on the substrate 6 are provided. The substrate holding part 9 has a comb-like hand 91 and a substrate turning means 93 that turns the substrate holding part 9 to face the upright mask 8.
The vacuum deposition chamber 1 moves the mask 8 based on the alignment camera 86 that images the alignment marks 84 and 85 (see the drawing) existing on the mask 8 and the substrate 6 above the mask 8, respectively. And an alignment driving unit (not shown).
When manufacturing each organic EL element, each vacuum evaporation chamber 1 performs evaporation using a different evaporation material in each vacuum evaporation chamber to form a final organic EL element. That is, the substrate 6 moves in each vacuum deposition chamber 1 and is processed in each vacuum deposition chamber 1. In each vacuum deposition chamber 1, an organic EL element is manufactured by depositing various evaporation materials 2 on a substrate 6 in order to form a film necessary for manufacturing the organic EL element.

  With such a configuration, the vacuum transfer robot 5 takes out the substrate 6 from the substrate stocker chamber 3 and carries it into the substrate holding unit 9 of the vacuum deposition chamber 1. In the vacuum deposition chamber 1, the substrate 6 carried in is directly opposed to the mask 8 by the substrate turning means 93, aligned, and the evaporation source 7 is moved up and down to deposit on the substrate 6. After vapor deposition, the substrate 6 is returned to a horizontal state. Thereafter, the substrate 6 is unloaded from the vacuum deposition chamber 1 by the vacuum transfer robot 5 and is carried into another vacuum deposition chamber 1 or returned to the substrate stocker chamber 3. In carrying in and out of the substrate 6 in such processing, the related gate valve 10 is controlled so as not to affect the processing of each vacuum deposition chamber 1.

FIG. 3 is a diagram illustrating a configuration of the control unit 40 of FIG.
The film thickness sensor (crystal sensor unit 20) detects the amount of the deposit 72f that is a deposition material that exits from the deposit outlet portion 78 of the evaporation source 7. The control unit 22 calculates the evaporation rate based on the information from the film thickness sensor 20, and sets the heating power source 24 so that power is supplied to the heating device of the evaporation source 7 so as to have a predetermined evaporation rate. Control. The crystal sensor unit 20 uses the fact that the natural frequency of the crystal sensor changes due to the deposition material adhering to the crystal sensor (quartz crystal resonator), and sequentially turns each one of the plurality of crystal sensors 110. Used for. That is, one of the plurality of crystal sensors 110 measures the film thickness.
In FIG. 3, the crystal sensor unit 20 detects the amount of the deposit 72 f that is a deposition material that exits from the deposit outlet portion 78 of the crucible (not shown) of the evaporation source 7. The control unit 22 calculates the vapor deposition rate based on information from the film thickness sensor 21, and heats the crucible heating means (not shown in the drawing) so that electric power is supplied to a predetermined evaporation rate. The power source 24 is controlled.

In the above description, the case of so-called feedback control has been described. However, the amount of the deposit 72f is not taken in, and the control unit controls the heating means power source 24 so that the amount of power corresponds to a predetermined evaporation rate. Control may be used.
The control device 40 is a control device that controls the entire organic EL manufacturing apparatus 100. The control unit 22 operates under the control of the control device 40.

Next, the cooling system 100 when the crystal sensor unit 20 is used in the organic EL manufacturing apparatus 100 of the present invention will be described.
FIG. 4 is a block diagram showing an embodiment of the configuration of the cooling system 210 of the crystal sensor unit 20 of the present invention. 4 will be described with reference to a graph showing an example of the temperature characteristics of the crystal sensor described in FIG. Also in FIG. 4, as in FIG. 7, the crystal sensor unit 20 shows only the crystal sensor 110 currently in use (film thickness monitor).

  The cooling system 210 for the crystal sensor unit of the present invention shown in FIG. 4 cools the crystal sensor unit 20 composed of a plurality of crystal sensors. The cooling system 210 of FIG. 4 includes a crystal sensor unit 20 including a crystal sensor 110, a temperature sensor 160, a temperature controller 120, a cooling water pump 150, an inverter unit 140, and a feedback switch 130. The temperature controller 120 also includes an external output terminal 170 for outputting the temperature measurement result of the crystal sensor 110 during film thickness measurement (in use) to the outside.

In the crystal sensor unit 20 including the plurality of crystal sensors 110 in FIG. 4, the inverter unit 140 rotates at a predetermined number of rotations when a control signal is not transmitted from the temperature controller 120. Thus, the cooling water pump 150 is controlled. The cooling water pump 150 rotates at a predetermined rotation speed according to the control of the inverter unit 140 and circulates the cooling water in the crystal sensor 110. That is, the inverter unit 140 outputs a control signal for adjusting the flow rate of the cooling water passing through the cooling water pump 150. The inverter 140 incorporates a constant speed control signal that causes the cooling water of the cooling water pump 150 to flow at a constant flow rate. The cooling water may be any fluid that can cool the surrounding heat.
A temperature sensor 160 such as a thermocouple measures the temperature of the environment in which the crystal sensor 110 is operating. The temperature of the crystal sensor 110 itself can be estimated empirically from the temperature of its environment. That is, the temperature sensor 160 measures the temperature of the crystal sensor 110 that is measuring (in use) the film thickness, and outputs the measured temperature information to the temperature controller 120. The temperature controller 120 determines whether or not the temperature of the crystal sensor 110 being used is within the constant speed control temperature range. That is, when the measured temperature is outside the constant speed control temperature range, the temperature controller 120 outputs an alarm and switches the feedback switch 130 to ON so that the rotation control signal of the temperature controller 120 is an inverter. It is assumed that transmission to the unit 140 is possible.
When the rotation control signal from the temperature controller 120 is input to the inverter unit 140, the inverter unit 140 does not output the constant speed control signal but outputs the rotation control signal from the temperature controller 120, and the cooling water pump 150 flow rate is controlled.
The cooling water pump 150 supplies cooling water to the crystal sensor unit 20 to cool the crystal sensor 110 of the crystal sensor unit 20.

Further, when the measured temperature is within the constant speed control temperature range, the temperature controller 120 switches the feedback switch 130 to OFF so that the control signal of the temperature controller 120 cannot be transmitted to the inverter unit 140. . As a result, since the control signal is not transmitted from the temperature controller 120, the inverter unit 140 controls the cooling water pump 150 so as to rotate at a predetermined rotation speed. The cooling water pump 150 rotates at a predetermined rotation speed according to the control of the inverter unit 141 and circulates the cooling water in the crystal sensor 110.
In other words, when the measured temperature is within the constant speed control temperature range, the temperature controller 120 outputs the built-in constant speed control signal. The cooling water pump 150 receives the constant speed control signal, flows cooling water at a rotation speed corresponding to the constant speed control signal, and cools the crystal sensor 110 of the crystal sensor unit 20. Since the crystal sensor 110 has a frequency tolerance within a range having linearity, the signal output from the crystal sensor 110 can be corrected based on the frequency tolerance.

With reference to FIG. 5, an operation procedure related to temperature control of the temperature controller 120 in the cooling system 210 of the crystal sensor unit 20 of the present invention will be described. FIG. 5 is a flowchart for explaining an embodiment of the cooling operation procedure of the crystal sensor unit of the present invention.
The control in FIG. 5 is executed by the temperature controller 120 constituting the cooling system 210 by controlling each device in the system.

First, in a predetermined time elapsed determination step S501, it is determined whether or not a predetermined time has elapsed since the previous process. If the predetermined time has not elapsed, the process returns to the predetermined time elapse determination step S501, and if it has elapsed, the process proceeds to the temperature information acquisition step S502.
In temperature information acquisition step S502, the latest temperature information output from the temperature sensor 160 is acquired, and the temperature of the crystal sensor 110 currently in use is calculated.
Next, in the temperature range out-of-temperature determination step S503, whether the calculated temperature is within a predetermined temperature range (for example, 10 [° C.] to 50 [° C.] according to the graph of FIG. 1) or out of range. Determine. If it is within the temperature range, the process returns to the predetermined time elapsed determination step S501. If the temperature is out of the temperature range, the process proceeds to the temperature determination step S504.
In temperature determination step S504, it is determined whether the calculated temperature is lower or higher than a predetermined temperature range. If the calculated temperature is lower than the predetermined temperature range, the process proceeds to the rotation speed reduction step S505. On the other hand, when the calculated temperature is higher than the predetermined temperature range, the process proceeds to the process of increasing the rotational speed S506.
In addition, you may perform out-of-temperature-range determination step S503 and temperature determination step S504 as the same process step.
In the rotation speed reduction step S505, a control signal for decreasing the rotation speed of the cooling water pump 150 by a predetermined number is output to the inverter unit 140, and the process returns to the predetermined time elapsed determination step S501. That is, when the temperature of the environment in which the crystal sensor 110 is operating is lower than 10 degrees Celsius, the rotation speed of the cooling water pump 150 is slowed so that the flow rate of the cooling water supplied to the crystal sensor 110 is reduced. To do.
In the rotation speed increasing step S506, a control signal for increasing the rotation speed of the cooling water pump 150 by a predetermined number is output to the inverter unit 140, and the process returns to the predetermined time elapsed determination step S501. That is, when the temperature of the environment in which the crystal sensor 110 is operating is higher than 50 degrees Celsius, the cooling water pump 150 is increased in speed so that the flow rate of the cooling water supplied to the crystal sensor 110 is increased. To do.

  Note that, in the rotation speed reduction step S505, the cooling water pump 150 may be stopped for a predetermined time and the cooling with the cooling water may be stopped.

FIG. 8 is a process diagram showing an example of the production process of the organic EL manufacturing apparatus. In the description of FIG. 1 to FIG. 7 described above, only the metal vapor deposition process of this production process has been mainly described.
In the process diagram of FIG. 8, a TFT substrate on which an organic layer and a thin film transistor (TFT) for controlling a current flowing in the organic layer are formed and a sealing substrate for protecting the organic layer from external moisture are separately formed and sealed. Combined in the sealing process of the process / seal curing process.

As described above, the crystal sensor unit of the present invention measures temperature changes due to individual differences in crystal sensors in use, and feeds back temperature data by frequency correction at the time of minute temperature changes and conventional cooling water flow rate control. The purpose is two-step control of cooling water control by temperature change above a certain level.
According to the present invention, the temperature control of the cooling water is executed in two stages, thereby stably following the frequency temperature change of each of the plurality of crystal sensors (quartz crystal units) of the crystal sensor unit due to a minute temperature change. Can do. For this reason, it is possible to realize a crystal sensor unit that can cool the crystal sensor stably even with variations due to individual differences of the crystal sensors. As a result, the film thickness can be measured accurately and stably, so that an organic EL manufacturing apparatus capable of manufacturing an organic EL element with improved quality can be realized.

  1: Vacuum deposition chamber, 2: Vacuum transfer chamber, 3: Substrate stocker, 5: Vacuum transfer robot, 6: Substrate, 7: Evaporation source, 8: Mask, 9: Substrate holder, 10: Gate valve, 20, 21 : Crystal sensor unit, 22: Control unit, 24: Power source for heating, 40: Control device, 43: Evaporation source scanning means, 57: Arm, 58: Comb-shaped hand, 72f: Deposited material, 78: Deposited material outlet 84, 85: alignment mark, 86: alignment camera, 91: comb-like hand, 93: substrate turning means, 100: organic EL manufacturing apparatus, 110: crystal sensor, 120, 121: temperature controller, 130: feedback Switch 140, 141: Inverter part 150: Cooling water pump 160: Temperature sensor 170: External output terminal 210, 211: Cooling system.

Claims (8)

A crystal sensor unit composed of a plurality of crystal sensors, one of which is a crystal sensor unit for measuring the film thickness,
A cooling water pump for cooling the crystal sensor unit by flowing a fluid;
A cooling water pump control unit that adjusts the flow rate of the fluid flowing through the cooling water pump;
A temperature controller that measures the temperature of the crystal sensor and instructs the cooling water pump control unit to flow the cooling water pump when the temperature is out of a predetermined temperature range;
A crystal sensor unit comprising:   2. The crystal sensor unit according to claim 1, wherein the crystal sensor measured by the temperature controller is a crystal sensor currently being monitored for film thickness.   3. The crystal sensor unit according to claim 1, wherein the predetermined temperature range is a temperature range in which a frequency tolerance of the crystal sensor can be linearly changed.   3. The crystal sensor unit according to claim 1, wherein the predetermined temperature range is not less than 10 degrees Celsius and not more than 50 degrees Celsius. Vapor deposition material for producing an organic EL element is vaporized, and an evaporation source for injecting the vapor to adhere to the object to be treated and a film thickness of the vapor deposition material adhering to the object to be treated are measured. In an organic EL manufacturing apparatus equipped with a crystal sensor unit
The crystal sensor unit includes a cooling water pump that cools the crystal sensor unit by flowing a fluid, a cooling water pump controller that adjusts a flow rate of the fluid that flows to the cooling water pump, and a temperature of the crystal sensor. An organic EL manufacturing apparatus comprising: a temperature controller that instructs the cooling water pump control unit to flow the flow rate through the cooling water pump when the temperature is out of a predetermined temperature range.   6. The organic EL manufacturing apparatus according to claim 5, wherein the crystal sensor measured by the temperature controller of the crystal sensor unit is a crystal sensor currently being monitored for film thickness.   7. The organic EL manufacturing apparatus according to claim 5, wherein the predetermined temperature range is a temperature range in which a frequency tolerance of the crystal sensor can be linearly changed.   7. The organic EL manufacturing apparatus according to claim 5, wherein the predetermined temperature range is not less than 10 degrees Celsius and not more than 50 degrees Celsius.

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