JP7064407B2 - Film forming equipment and control method of film forming equipment - Google Patents

Description

The present invention relates to a film forming apparatus for forming a thin film on a film forming object by a vacuum deposition method and a control method thereof.

As a film forming apparatus for forming a thin film on a substrate as a film forming object, a container (a pit) containing a film forming material is heated in a vacuum chamber to evaporate (sublimate or vaporize) the film forming material. There is a vacuum vapor deposition type film forming apparatus that is sprayed to the outside and adhered to and deposited on the surface of the substrate. In such a film forming apparatus, there is known an apparatus configuration in which a film forming rate is acquired by using a monitor unit arranged in a vacuum chamber and fed back to the heating control of a container in order to obtain a desired film thickness. The monitor unit is equipped with a crystal oscillator, and the film formation rate is acquired based on the change in the natural frequency of the crystal oscillator due to the adhesion of the film formation material. If the amount of film-forming material adhered to the crystal oscillator increases too much, the change in the amount of adhesion does not accurately appear as a change in the natural frequency, so it is necessary to replace it with a new crystal oscillator.

Here, the amount of the film-forming material adhered to the crystal oscillator is not always stable if the heating is controlled to be constant, and may suddenly fluctuate due to, for example, bumping of the film-forming material. Such a sudden disturbance in the amount of film-forming material adhered may cause the actual amount of film-forming film on the substrate to deviate from the monitor value, and may miss the appropriate replacement timing of the crystal unit. There is a concern that the monitoring accuracy of the membrane rate may decrease. Patent Document 1 discloses a configuration for detecting the presence or absence of an undesired splash caused by bumping of a vapor-deposited raw material in a crucible by comparing a monitor value with a preset reference value.

However, fluctuations in the monitor value may be caused by a malfunction or failure of the monitor unit, and it may not be easy to immediately identify the cause from the monitor value. Further, it is not easy to directly confirm the operating state of the monitor unit arranged in the vacuum chamber, and the occurrence of such confirmation work has a great influence on the manufacturing tact.

Japanese Unexamined Patent Publication No. 2006-45581

An object of the present invention is to provide a technique that enables more accurate and easy grasping of the state of an apparatus and control of film formation.

In order to achieve the above object, the film forming apparatus of the present invention is used.
A chamber that houses the film-forming object and
A heating control unit that controls the electric power supplied to the heating source for heating the film-forming material contained in the container arranged in the chamber.
A monitor unit arranged in the chamber for detecting the film formation rate of the film-forming material with respect to the film-forming object, which has a crystal oscillator, a shielding portion and an opening, and the crystal oscillator and the above. A monitor unit having a rotating body arranged between the containers and
It is possible to take either a shielded state in which the shielding portion is located between the container and the crystal oscillator, or a non-shielding state in which the opening is located between the container and the crystal oscillator. In addition, a rotation control unit that controls the rotation of the rotating body,
An acquisition unit that acquires the film formation rate based on a change in the resonance frequency of the crystal unit, and
Equipped with
A film forming apparatus for forming a film formed of the film forming material on the film forming object.
While the power supplied by the heating control unit to the heating source is kept constant, the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in a predetermined period changes. Whether or not bumping has occurred in the film-forming material or whether or not the monitor unit has failed based on the change in the amount of fluctuation of the resonance frequency in the predetermined period when the above-mentioned is changed. It is characterized by including a state determination unit for determining whether or not .
In order to achieve the above object, the control method of the film forming apparatus of the present invention is:
A chamber that houses the film-forming object and
A heating control unit that controls the electric power supplied to the heating source for heating the film-forming material contained in the container arranged in the chamber.
A monitor unit arranged in the chamber for detecting the film formation rate of the film-forming material with respect to the film-forming object, which has a crystal oscillator, a shielding portion and an opening, and the crystal oscillator and the above. A monitor unit having a rotating body arranged between the containers and
It is possible to take either a shielded state in which the shielding portion is located between the container and the crystal oscillator, or a non-shielding state in which the opening is located between the container and the crystal oscillator. In addition, a rotation control unit that controls the rotation of the rotating body,
An acquisition unit that acquires the film formation rate based on a change in the resonance frequency of the crystal unit, and
Equipped with
In the control method of the film forming apparatus for forming a film by the film forming material on the film forming object.
The first step of performing the film formation by the rate control in which the heating control unit controls the amount of electric power so that the film formation rate acquired by the acquisition unit is maintained at a predetermined value.
When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the heating control unit uses a power amount set from the rate control regardless of the film formation rate acquired by the acquisition unit. The second step of switching to power control to supply power and performing the film formation, and
During the second step, the third step in which the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in a predetermined period changes.
Whether or not bumping occurs in the film-forming material based on the change in the amount of fluctuation of the resonance frequency in the predetermined period when the rotation speed is changed in the third step, or the monitor unit. 4th step to determine whether or not a failure has occurred in
It is characterized by having.

According to the present invention, it is possible to more accurately and easily grasp the situation of the apparatus and control the film formation.

Schematic sectional view of the film forming apparatus in the embodiment of the present invention. Schematic diagram showing the configuration of the film formation rate monitoring device in the embodiment of the present invention. Schematic diagram showing the configuration of the crystal monitor head and the shielding member in the embodiment of the present invention. Flow chart of power supply control to heater in the embodiment of the present invention Explanatory drawing of rotation control of shielding member in Example of this invention

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

[Example 1]
The film forming rate monitoring device and the film forming apparatus according to the embodiment of the present invention will be described with reference to FIGS. 1 to 5. The film forming apparatus according to this embodiment is a film forming apparatus for forming a thin film on a substrate by vacuum deposition. The film forming apparatus according to this embodiment is on a substrate (including a laminate having a laminate formed on the substrate) in the manufacture of various electronic devices such as various semiconductor devices, magnetic devices, and electronic components, and optical components. It is used to deposit and form a thin film. More specifically, the film forming apparatus according to this embodiment is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Above all, the film forming apparatus according to this embodiment is particularly preferably applicable in the production of an organic light emitting element such as an organic EL (ElectroLuminescence) element and an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention also includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) equipped with a light emitting element, and a sensor (for example, an organic CMOS image sensor) equipped with a photoelectric conversion element. It's a waste. The film forming apparatus according to this embodiment can be used as a part of a film forming system including a sputtering apparatus and the like.

<Outline configuration of film forming equipment>
FIG. 1 is a schematic view showing the configuration of the film forming apparatus 2 according to the embodiment of the present invention. The film forming apparatus 2 has a vacuum chamber (deposition chamber, vapor deposition chamber) 200 whose inside is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas by the exhaust device 24 and the gas supply device 25. In the present specification, "vacuum" means a state in a space filled with a gas having a pressure lower than the atmospheric pressure.

When the substrate 100, which is the object of film formation, is conveyed to the inside of the vacuum chamber 200 by a transfer robot (not shown), it is held by a substrate holding unit (not shown) provided in the vacuum chamber 200 and placed on the upper surface of the mask 220. Placed. The mask 220 is a metal mask having an opening pattern 221 corresponding to the thin film pattern formed on the substrate 100, and is installed parallel to the horizontal plane inside the vacuum chamber 200. The substrate 100 is placed on the upper surface of the mask 220 by the substrate holding unit, so that the substrate 100 is installed inside the vacuum chamber 200 in a manner parallel to the horizontal plane and the lower surface as the surface to be processed is covered with the mask 220.

An evaporation source device 300 is provided below the mask 220 inside the vacuum chamber 200. The evaporation source device 300 generally includes an evaporation source container (crucible) 301 (hereinafter referred to as a container 301) accommodating a film forming material (deposited material) 400 and a heating means (hereinafter referred to as a container 301) for heating the film forming material 400 contained in the container 301. A heater 302 as a heating source) is provided. The film-forming material 400 in the container 301 evaporates in the container 301 by heating the heater 302, and is ejected to the outside of the container 301 through the nozzle 303 provided in the upper part of the container 301. The film-forming material 400 ejected to the outside of the container 301 is deposited on the surface of the substrate 100 installed above the apparatus 300 in accordance with the opening pattern 221 provided on the mask 220.

The heater 302 has a configuration in which a single linear (wire-shaped) heating element that generates heat by energization is wound around the outer periphery of the cylindrical portion of the container 301 a plurality of times. In addition, a configuration in which a plurality of heating elements are wound around may be used. As the heater 302, a metal heating element such as stainless steel may be used as the heating element, or a carbon heater or the like may be used.
Although not shown, the evaporation source device 300 includes a reflector and a heat transfer member for increasing the heating efficiency of the heater 302, a frame body including the entire configuration of the evaporation source device 300 including them, a shutter, and the like. May be provided. Further, since the evaporation source device 300 uniformly forms a film on the entire substrate 100, it may be configured to be relatively movable with respect to the fixedly placed substrate 100.

The film forming apparatus 2 according to the present embodiment is a film forming rate monitoring apparatus 1 as a means for detecting the amount of steam of the film forming material 400 ejected from the container 301 or the film thickness of the thin film formed on the substrate 100. It is equipped with. The film forming rate monitoring device 1 is provided in the crystal monitor head 11 by intermittently repeating a shielding state and a non-shielding state by a shielding member 12 as a rotating body for a part of the film forming material 400 ejected from the container 301. It is configured to adhere to the crystal unit. By detecting the amount of change (decrease) in the resonance frequency (natural frequency) of the crystal oscillator due to the deposition of the film-forming material 400, the film-forming rate (vapor deposition rate) corresponding to a predetermined control target temperature can be obtained. The amount of adhesion (deposited amount) of the film-forming material 400 per unit time can be obtained. By feeding back this film formation rate to the setting of the control target temperature in the heating control of the heater 302, the film formation rate can be arbitrarily controlled. Therefore, by constantly monitoring the discharge amount of the film forming material 400 or the film thickness on the substrate 100 during the film forming process by the film forming rate monitoring device 1, highly accurate film forming is possible. The control unit (arithmetic processing device) 20 of the film forming apparatus 2 according to the present embodiment is a monitor control unit 21 that controls the operation of the monitor unit 10, measures and acquires the film forming rate, and heat control of the evaporation source device 300. It has a heating control unit 22 for performing the above.

<Film film rate monitoring device>
FIG. 2 is a schematic diagram showing a schematic configuration of the film formation rate monitoring device 1 according to the present embodiment. As shown in FIG. 2, the film-forming rate monitoring device 1 according to the present embodiment includes a monitor unit 10 including a monitor head 11 and a shielding member (chopper) 12, and a monitor control unit 21. The monitor unit 10 includes a monitor head 11, a shielding member 12, a servomotor 16 as a rotation driving source of a crystal holder (rotational support) 14 incorporated in the crystal monitor head 11, and a shielding member 12 as a rotation driving source. Servo motor 15 and the above. The monitor control unit 21 includes a shielding member control unit (rotation control unit) 212 that controls the rotation drive of the shielding member 12, and a film forming rate acquisition unit 213 that acquires (the amount of change) of the resonance frequency (change amount) of the crystal oscillator 13. , A holder control unit 214 that controls the rotational drive of the crystal holder 14.

FIG. 3 is a schematic view showing the arrangement relationship between the monitor head 11 (crystal holder 14) and the shielding member 12 when viewed along the respective rotation axis directions. As shown in FIG. 3, inside the monitor head 11, a crystal holder 14 for supporting a plurality of crystal oscillators 13 (13a, 13b) by arranging them at equal intervals in the circumferential direction is incorporated. The monitor head 11 is provided with one monitor opening 11a slightly larger than the crystal oscillator 13, and the crystal holder 14 supports one of the crystal oscillators 13 via the monitor opening 11a. It is supported at a position (rotational phase) exposed to the outside (vapor deposition source device 300).

As shown in FIGS. 2 and 3, the center of the crystal holder 14 is connected to the motor shaft 16a of the servomotor 16, and the crystal holder 14 is rotationally driven by the servomotor 16. As a result, the crystal oscillator 13 exposed to the outside through the monitor opening 11a can be sequentially switched. That is, of the plurality of crystal oscillators 13 supported by the crystal holder 14, one crystal oscillator 13a is in a position where the phase overlaps with the monitor opening 11a, and the other crystal oscillator 13b is used or replaced. As a crystal oscillator, it is in a position hidden inside the monitor head 11. When the crystal unit 13 exposed to the outside through the monitor opening 11a reaches the end of its life when the amount of the film-forming material 400 adhered exceeds a predetermined amount, the crystal holder 14 rotates to provide a new crystal unit 13. , Move to an exposed position that overlaps with the monitor opening 11a.
The rotation control of the servomotor 16 by the holder control unit 214 is performed based on the rotation position (rotational phase) of the crystal holder 14 detected by the phase position detecting means 18 including the detection unit 18a and the detected unit 18b. As the position (phase) detecting means, a known position sensor such as a rotary encoder may be used.

As shown in FIG. 3, the shielding member 12 is a substantially disk-shaped member, the center of which is connected to the motor shaft 15a of the servomotor 15, and is rotationally driven by the servomotor 15. The shielding member 12 is provided at a position where a fan-shaped opening slit (opening, non-shielding portion) 12a is located away from the center of rotation and its rotation trajectory overlaps with the monitor opening 11a of the monitor head 11. There is.

As shown in FIGS. 2 and 3, the rotation of the shielding member 12 causes the relative position (relative phase) of the opening slit 12a with respect to the monitor opening 11a to overlap with the monitor opening 11a (opening position, non-shielding position). , It changes to a position that does not overlap (non-opening position, shielding position). As a result, when the region portion of the shielding member 12 excluding the opening slit 12a becomes the shielding portion 12b and this is in the overlapping (covering) position (phase) with the monitor opening 11a, the film forming material 400 adheres to the crystal oscillator 13a. It becomes a shielded state (non-opening state) that is hindered. Further, when the opening slit 12a is at a position (phase) overlapping with the monitor opening 11a, the film forming material 400 is allowed to adhere to the crystal oscillator 13a in a non-shielding state (opening state).
The rotation control of the servomotor 15 by the shielding member control unit 212 is performed based on the rotation position (rotational phase) of the shielding member 12 detected by the phase position detecting means 17 including the detecting unit 17a and the detected unit 17b. As the position (phase) detecting means, a known position sensor such as a rotary encoder may be used.

Although the opening slit 12a is a closed hole in this embodiment, it may be in the shape of a notch opened at the peripheral end of the shielding member 12. Further, the number of slits may be two or more, and the slit shape is not limited to the fan shape shown in this embodiment, and various shapes can be adopted. When a plurality of opening slits 12a are provided, they may have different shapes.

The crystal oscillator 13a is connected to the external resonator 19 via an electrode, a coaxial cable, or the like. The transmission signal generated by applying a voltage between the thin film of the film forming material 400 deposited on the surface of the crystal oscillator 13a and the electrode on the back surface serves as the resonance frequency (change amount) of the crystal oscillator 13. It is transmitted from the resonator 19 to the film formation rate acquisition unit 213 and acquired.

Although not shown, the monitor unit 10 is provided with a flow path for flowing cooling water for cooling the heat of the motors 15 and 16 which are heat sources.
The configuration of the film formation rate monitoring device shown here is merely an example, and the present invention is not limited to this, and various known configurations may be appropriately adopted.

<Characteristics of this example>
FIG. 4 is a flowchart of power supply control to the heater 302 in the film forming apparatus 2 according to the present embodiment. The control body of the flow described below is the control unit 20 described above, which also serves as the state determination unit in the present invention.

The amount of heat generated by the heater 302 is controlled by controlling the amount of electric power (current value) supplied to the heater 302 by the heating control unit 22 including the power supply circuit. The power supply amount is adjusted by PID control, for example, so that the temperature detected by the temperature detecting means (not shown) is maintained at a predetermined control target temperature suitable for obtaining a desired film formation rate. By maintaining the calorific value of the heater 302 (power supplied to the heater 302) capable of maintaining a predetermined film formation rate for a predetermined time, a thin film having a desired film thickness is formed on the surface to be filmed of the substrate 100. (Film thickness = film formation rate [Å / S] x time [t]).

The film forming apparatus 2 according to the present embodiment is configured to be feasible to switch between rate control and average power control as a method of controlling the supply power in the heating control of the heater 302. The power control method is not limited to these.
In rate control, the control target temperature is timely changed and set so that the monitor value (actual measurement value) of the film formation rate acquired by the film formation rate monitor device 1 matches the desired target rate (theoretical value). The amount of power supplied to the heater 302 is controlled according to the target temperature.
In this embodiment, the average power control is used as the power control for determining the amount of power supplied to the heater 302 regardless of the monitor value (actual measurement value) of the film formation rate acquired by the film formation rate monitor device 1. .. In the average power control, the moving average of the past number sampling of the supplied power is set as the target power amount, and the power supply to the heater 302 is controlled so as to maintain the target power amount. It should be noted that the power control for supplying electric power to the heater 302 may be used so as to maintain the preset electric energy (target electric energy). In these power controls, the film thickness is controlled by using a theoretical value set based on the film formation conditions such as the type of film formation material and the relative speed between the substrate and the evaporation source.

In this embodiment, the rate control (first step) described above is adopted as the basic power control method, and the power supply to the heater 302 is started (S101). That is, the amount of power supplied to the heater 302 (control target temperature) is timely adjusted so that the monitor value of the film formation rate acquired by the film formation rate monitor device 1 maintains a desired rate.

At this time, the monitor value of the film formation rate acquired by the film formation rate monitor device 1 may be an abnormal value deviating from the target rate for some reason. In this embodiment, two causes, (1) bumping of the film forming material 400 and (2) failure of the monitor unit 10, are assumed as the causes of the monitor value taking an abnormal value, and these film formations are assumed. It is characterized in that control for determining an abnormal state of the device 2 is performed. When bumping occurs in the film-forming material 400 in the container 301, the amount of the film-forming material 400 adhered to the crystal oscillator 13a may increase instantaneously or suddenly. Further, as a failure of the monitor unit 10, the amount of the film-forming material 400 adhered to the crystal oscillator 13 may be excessively increased and the monitor value may become an abnormal value. Therefore, a threshold value is set for determining whether or not the monitor value acquired in the rate control indicates the value in the above-mentioned abnormal state, and the appropriateness is determined each time the film formation rate is acquired during the rate control. Confirm (S102).

If the acquired film formation rate does not exceed the threshold value (S102: YES), the rate control is continued (S101), and if an abnormal film formation rate is not acquired as it is, the rate control continues until the end of the film formation sequence. (S103).

When the acquired film forming rate reaches the threshold value (S102: NO), the process shifts to the determination sequence for determining the state of the film forming apparatus 2, and the power control is switched from the rate control to the average power control (second step). (S104). That is, electric power is supplied to the heater 302 with a fixed amount of electric power. Then, in this state, the rotation control mode of the shielding member (chopper) 12 is changed to a rotation control mode (second shielding mode) different from the rotation control mode (first shielding mode) executed at the time of rate control (third). Step) (S105). Specifically, the shielding member changes the length of the non-shielding state in the predetermined period (predetermined unit period), that is, the exposure time of the crystal oscillator 13a in the predetermined period changes. Twelve rotation controls are changed. Then, is the change amount (variation amount) of the resonance frequency of the crystal oscillator 13a in the predetermined period due to the change in the exposure time within the predetermined period due to the change in the rotation control, the change amount according to the change in the exposure time? Whether or not, that is, whether or not the fluctuation amount of the adhesion amount of the film forming material 400 to the crystal transducer 13a in a predetermined period shows a value corresponding to the fluctuation amount of the exposure time in the predetermined period is confirmed (fourth). Step) (S106). The state of the film forming apparatus 2 is determined from the fluctuation amount of the resonance frequency.

Here, the rotation control mode of the shielding member 12 in this embodiment will be described with reference to FIG. 5A and 5B are graphs for explaining rotation control of the shielding member 12 in this embodiment, FIG. 5A is a graph for explaining rotation control of the shielding member 12 in the first mode, and FIG. 5B is a graph for explaining rotation control of the shielding member 12 in the second mode. It is a graph explaining the rotation control of a shielding member 12. In FIG. 5, the time when the shielding member 12 is in the state of shielding the crystal oscillator 13 is indicated by 0, and the time when the shielding member 12 is in the state of not shielding is indicated by 1.
The present embodiment is characterized in that the control of the rotational operation of the shielding member 12 is changed in order to determine the state of the film forming apparatus 2. Specifically, the shielding member 12 is provided so that the exposure time of the crystal oscillator 13a within a predetermined period is longer than that of the first shielding mode (hereinafter referred to as the first mode) which is the rotation control in the normal rate control. The second shielding mode (hereinafter referred to as the second mode) for controlling the rotation speed is executed.

In the second mode, the steady rotation speed of the shielding member 12 in the non-shielding state where the opening slit 12a overlaps with the monitor opening 11a becomes 1/10 of the steady rotation speed in the shielding state where the opening slit 12a does not overlap with the monitor opening 11a. To control. In the first mode, the rotation of the shielding member 13 is controlled at a constant steady rotation speed regardless of whether the opening slit 12a and the monitor opening 11a are shielded or unshielded. The steady rotation speed in the shielded state of the second mode and the steady rotation speed in the first mode are the same, and therefore, the steady rotation speed in the unshielded state in the second mode is the steady rotation speed in the first mode. It is 1/10 of the steady rotation speed in the unshielded state. As a result, when compared in the same predetermined period (unit period), the time length (second length) of the period in which the second mode is in the unshielded state is the period in which the first mode is in the unshielded state. Is longer than the time length (first length) of.

FIG. 5A shows the time length TO1 of the non-shielding state (film-attached state) in the first mode, and FIG. 5B shows the time length of the non-shielding state (film-attached state) in the second mode. It shows TO2. As shown in FIG. 5, the steady rotation speed is reduced to 1/10, so that TO2 has 10 times the time of TO1. Comparing the first mode and the second mode within the time shown in FIG. 5 as a predetermined period, the number of times the unshielded state is set in the first mode is three times, whereas in the second mode it is not. The number of times the shielded state is set is two, and the number of times is larger in the first mode. However, the duration of one unshielded state is longer in the second mode than in the first mode, and the total duration of the unshielded state within a predetermined period is also longer in the second mode in the first mode. Will be longer than.

In the example shown in FIG. 5, the ratio of the unshielded time to the unit time is about 3.3% in the first mode, while it is about 25% in the second mode.
Since the above ratio of about 3.3% in the first mode is a numerical value by constant velocity rotation control, it is a numerical value that matches the aperture ratio of the shielding member 12 (the area ratio of the opening 12a to the shielding portion 12b). That is, in the shielding member 12 in this embodiment, the area ratio of the shielding portion 12b and the opening portion 12a is composed of the opening portion 12a: 1/30 and the shielding portion 12b: 29/30, and the opening ratio of the shielding member 12 Is 1/30 = 3.3%.
On the other hand, the above ratio of about 25% in the second mode is obtained as follows. That is, since the steady rotation speed in the non-shielded state is 1/10 of the steady rotation speed in the shielded state, the time for the open state (non-shielded state) is 1 as compared with the first mode. / 30 * 1/10 = 10/30. On the other hand, the time for the closed state (shielding state) is 29/30 as in the first mode. Therefore, the aperture ratio = the time in the open state ÷ the time for one rotation = 10/30 ÷ (10/30 + 29/30) = 10/39 = 0.25.
That is, the aperture ratio of the shielding member 12 can be substantially increased by the shift control of the shielding member 12 according to the present embodiment (control to make the steady rotation speed in the non-shielding state slower than the steady rotation speed in the shielding state). .. As a result, the aperture ratio of the shielding member 12 can be variably controlled without taking a method such as physically changing the shape of the shielding member 12 (without complicating the device configuration), and the crystal oscillator 13 can be formed. It is possible to arbitrarily control the amount of film.

When the rotation control mode of the shielding member 12 changes, the ratio of the non-shielding state time to the unit time changes, and the substantial aperture ratio of the shielding member 12 changes. As a result, the amount of adhesion of the film-forming material 400 to the crystal oscillator 13 in a predetermined period will fluctuate, and the amount of fluctuation in the resonance frequency of the crystal oscillator 13 in a predetermined period will also fluctuate. That is, as long as the monitor unit 10 is operating normally, the change in the length of the non-shielding state period by the shielding member 12 within the predetermined period is the fluctuation amount of the resonance frequency of the crystal oscillator 13 in the predetermined period. It should show up as a change. However, when the above-mentioned failure occurs and the monitor unit 10 is not operating normally, the amount of fluctuation of the resonance frequency of the crystal oscillator 13 in a predetermined period even if the rotation control of the shielding member 12 is changed. Can not change sufficiently, or the amount of fluctuation can be zero.

Therefore, when the change in the amount of change in the resonance frequency of the crystal oscillator 13 acquired before and after the change in the rotation control of the shielding member 12 shows the change according to the change in the rotation control of the shielding member 12, in S102. It is determined that the cause of the abnormal value of the film formation rate is bumping (S106: YES). For example, it is determined by whether or not the rate of change in the amount of variation in the resonance frequency expected when the monitor unit 10 is operating normally is within a value set in advance by an experiment or the like or a predetermined numerical range. .. When the change in the acquired resonance frequency fluctuation amount falls within a predetermined value or a predetermined numerical range, it is determined that the cause of the abnormal value of the film formation rate is bumping.
In this case, bumping chip control (fifth step) is carried out (S107). In this embodiment, control is performed to return to rate control as bumping chip control. The bumping chip control is not limited to this, and control may be performed to interrupt the film formation sequence according to the degree and frequency of bumping.

On the other hand, when the fluctuation amount of the resonance frequency of the crystal oscillator 13 acquired before and after the change of the rotation control of the shielding member 12 does not show the change according to the change of the rotation control of the shielding member 12 (S106: NO). Determines that some of the above-mentioned failures have occurred in the monitor unit 10. For example, if the change in the acquired resonance frequency fluctuation amount does not reach the predetermined value described above or does not fall within the predetermined numerical range, the cause of the abnormal value of the film formation rate is a failure of the monitor unit 10. Is determined. Specifically, when the fluctuation amount of the resonance frequency of the crystal oscillator 13 after changing the rotation control of the shielding member 12 (first mode → second mode) becomes zero, or the change in the fluctuation amount is significantly reduced. Such cases are possible, but are not limited to this.
In this case, monitor-compatible control (sixth step) is carried out (S108). In this embodiment, as monitor-compatible control, the average power control switched in S104 is continuously controlled until the end of the film formation sequence (S109). The monitor-compatible control is not limited to this, and for example, the film forming sequence may be interrupted to notify the user of the failure of the monitor unit 10.

By the above control, it is appropriately determined whether the abnormal value of the film forming rate is due to bumping of the film forming material 400 in the evaporation source container 301 or due to the failure of the monitor unit 10, and the film forming control is performed. It can be performed. Further, the cause can be determined by simple control by switching the power control and changing the rotation control of the shielding member. In particular, it is not easy to directly check the monitor unit arranged in the vacuum chamber with respect to the failure of the monitor unit 10, and it is possible to check by the above control, which is very advantageous for shortening the manufacturing tact. That is, according to this embodiment, it is possible to more accurately and easily grasp the state of the apparatus and control the film formation.

The method for controlling the rotation of the shielding member 12 for confirming the change in the fluctuation amount of the resonance frequency of the crystal oscillator in a predetermined period is not limited to the above-mentioned control method. For example, in the rotation control of the shielding member 12 in the second mode, the rotation direction of the shielding member 12 is temporarily changed in the opposite direction to reciprocate, thereby increasing the number of times the shielding member 12 is in the non-shielding state within a predetermined period (frequency). May be increased). By reciprocating the shielding member 12 so that the opening slit 12a moves back and forth in the vicinity of the monitor opening 11a, the shielding member 12 is rotated in a single direction to periodically form a non-shielding state. It is possible to increase the number of occurrences of the unshielded state within the period. As a result, the duration of the total unshielded state within a predetermined period can be lengthened. From the viewpoint of avoiding uneven film formation, the turning back in the rotational direction in the reciprocating rotational motion is performed after the opening slit 12a completely passes through the monitor opening 11a (that is, the crystal oscillator 13a is sufficiently shielded). It is preferable to do it afterwards.
Alternatively, in the second mode, the number of unshielded states within a predetermined period is controlled by changing the steady rotation speed in the shielded state to a speed faster than the steady rotation speed in the unshielded state (steady rotation speed in the first mode). May be increased.
Further, in the second mode, the rotation of the shielding member 12 may be temporarily stopped in the non-shielding state to prolong the duration of the non-shielding state within a predetermined period.
Further, the control may be a combination of the above-mentioned controls. For example, control may be performed in which the steady rotation speed in the non-shielded state is decelerated while the reciprocating rotation is performed so that the shielded state and the non-shielded state are repeated in a short period of time.
Further, in this embodiment, the steady rotation speed in the shielded state of the second mode and the steady rotation speed in the first mode are set to the same speed, but the effect of substantially increasing the aperture ratio of the shielding member 12 can be obtained. In the range, different speeds may be set as appropriate.

1 ... film formation rate monitor device, 10 ... monitor unit, 11 ... crystal monitor head, 11a ... monitor opening, 12 ... shielding member (chopper), 12a ... opening slit (opening, non-shielding portion), 12b ... shielding portion, 13 (13a, 13b) ... Crystal oscillator, 14 ... Crystal holder (rotary support), 15 ... Servo motor (drive source), 15a ... Motor shaft, 16 ... Servo motor (drive source), 16a ... Motor shaft 16a, 17 (17a, 17b) ... position (rotational phase) detecting means, 18 (18a, 18b) ... position (rotating phase) detecting means, 19 ... resonator, 2 ... film forming apparatus, 100 ... substrate, 20 ... control unit ( Acquisition unit, heating control unit), 200 ... Vacuum chamber (deposition chamber), 300 ... Evaporation source device, 301 ... Evaporation source container (servo), 302 ... Heater (heating source), 303 ... Nozzle

Claims (23)

A chamber that houses the film-forming object and
A heating control unit that controls the electric power supplied to the heating source for heating the film-forming material contained in the container arranged in the chamber.
A monitor unit arranged in the chamber for detecting the film formation rate of the film-forming material with respect to the film-forming object, which has a crystal oscillator, a shielding portion and an opening, and the crystal oscillator and the above. A monitor unit having a rotating body arranged between the containers and
It is possible to take either a shielded state in which the shielding portion is located between the container and the crystal oscillator, or a non-shielding state in which the opening is located between the container and the crystal oscillator. In addition, a rotation control unit that controls the rotation of the rotating body,
An acquisition unit that acquires the film formation rate based on a change in the resonance frequency of the crystal unit, and
Equipped with
A film forming apparatus for forming a film formed of the film forming material on the film forming object.
While the power supplied by the heating control unit to the heating source is kept constant, the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in a predetermined period changes. Whether or not bumping has occurred in the film-forming material or whether or not the monitor unit has failed based on the change in the amount of fluctuation of the resonance frequency in the predetermined period when the above-mentioned is changed. A film forming apparatus including a state determination unit for determining whether or not . The film formation is performed by rate control in which the heating control unit controls the amount of electric power so that the film formation rate acquired by the acquisition unit is maintained at a predetermined value.
The film formation according to claim 1, wherein when the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the state determination sequence of the film formation apparatus by the state determination unit is executed. Device. When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the heating control unit uses a power amount set from the rate control regardless of the film formation rate acquired by the acquisition unit. The film forming apparatus according to claim 2, wherein the film forming apparatus is switched to power control for supplying power. The amount of change in the resonance frequency in the predetermined period when the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in the predetermined period changes is predetermined. If the amount does not fluctuate according to a change in the length of the non-shielding state during the period of, the state determination unit determines that the monitor unit is in a state of failure. Item 6. The film forming apparatus according to any one of Items 1 to 3. The amount of change in the resonance frequency in the predetermined period when the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in the predetermined period changes is predetermined. The film forming apparatus according to any one of claims 1 to 3 , wherein if the value does not exceed the value of, the state determination unit determines that the monitor unit is in a state of failure. The amount of change in the resonance frequency in the predetermined period when the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in the predetermined period changes is predetermined. The claim is characterized in that, in the case of a fluctuation amount corresponding to a change in the length of the non-shielding state in the period of the above, the state determination unit determines that the film forming material is in a state where bumping has occurred. The film forming apparatus according to any one of 1 to 3 . The amount of change in the resonance frequency in the predetermined period when the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in the predetermined period changes is predetermined. The film forming apparatus according to any one of claims 1 to 3 , wherein when the value exceeds the value of, the state determining unit determines that the film forming material is in a state of sudden boiling. When the state determination unit determines that the monitor unit is in a state of failure, the amount of power set for the subsequent film formation regardless of the film formation rate acquired by the acquisition unit. The film forming apparatus according to any one of claims 1 to 7, wherein the film forming apparatus is performed by power control supplied by the heating control unit. When the state determination unit determines that bumping has occurred in the film forming material, the film formation rate acquired by the acquisition unit is maintained at a predetermined value for the subsequent film formation. The film forming apparatus according to any one of claims 1 to 8, wherein the heating control unit performs rate control for controlling electric power. A first shielding mode in which the rotation control unit rotates the shielding unit so that the non-shielding state period becomes the first length in a predetermined period.
A second shielding mode in which the rotation control unit rotates the shielding portion so that the non-shielding state period becomes a second length longer than the first length in the predetermined period.
Have,
Change in the amount of fluctuation of the resonance frequency in the predetermined period when the first shielding mode is switched to the second shielding mode while the electric power supplied to the heating source by the heating control unit is kept constant. The film forming apparatus according to any one of claims 1 to 9, wherein the state determining unit determines the state of the film forming apparatus based on the above. The tenth aspect of the present invention is characterized in that the rotation control unit rotates the shielding unit so that the rotation speed in the non-shielding state becomes slower than the rotation speed in the shielding state in the second shielding mode. The film forming apparatus according to the above. The rotation control unit is characterized in that the shielding unit is rotated so that the rotation speed of the second shielding mode in the non-shielding state is slower than the rotation speed of the first shielding mode in the non-shielding state. The film forming apparatus according to claim 10 or 11. The rotation control unit is set so that the frequency of being in the non-shielding state in the predetermined period of the second shielding mode is higher than the frequency of being in the non-shielding state in the predetermined period of the first shielding mode. The film forming apparatus according to claim 10, wherein the shielding portion is reciprocally rotated in the second shielding mode. A container that houses the film-forming material and is placed in the chamber,
A heating source that heats the container by being supplied with electric power, and a heating source whose supplied electric power is controlled by the heating control unit.
The film forming apparatus according to any one of claims 1 to 13, further comprising. A chamber that houses the film-forming object and
A heating control unit that controls the electric power supplied to the heating source for heating the film-forming material contained in the container arranged in the chamber.
A monitor unit arranged in the chamber for detecting the film formation rate of the film-forming material with respect to the film-forming object, which has a crystal oscillator, a shielding portion and an opening, and the crystal oscillator and the above. A monitor unit having a rotating body arranged between the containers and
It is possible to take either a shielded state in which the shielding portion is located between the container and the crystal oscillator, or a non-shielding state in which the opening is located between the container and the crystal oscillator. In addition, a rotation control unit that controls the rotation of the rotating body,
An acquisition unit that acquires the film formation rate based on a change in the resonance frequency of the crystal unit, and
Equipped with
In the control method of the film forming apparatus for forming a film by the film forming material on the film forming object.
The first step of performing the film formation by the rate control in which the heating control unit controls the amount of electric power so that the film formation rate acquired by the acquisition unit is maintained at a predetermined value.
When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the heating control unit uses a power amount set from the rate control regardless of the film formation rate acquired by the acquisition unit. The second step of switching to power control to supply power and performing the film formation, and
During the second step, the third step in which the rotation control unit changes the rotation speed of the rotating body so that the length of the non-shielding state in a predetermined period changes.
Whether or not bumping occurs in the film-forming material based on the change in the amount of fluctuation of the resonance frequency in the predetermined period when the rotation speed is changed in the third step, or the monitor unit. 4th step to determine whether or not a failure has occurred in
A method for controlling a film forming apparatus, which comprises. In the fourth step, if the fluctuation amount does not exceed a predetermined value, it is determined that the monitor unit has a failure, and if the fluctuation amount exceeds a predetermined value, the film forming material is formed. The control method for a film forming apparatus according to claim 15, wherein it is determined that bumping has occurred. In the fourth step, when it is determined that the state of the film forming apparatus is a state in which bumping occurs in the film forming material, the fifth step of switching from the power control to the rate control and continuing the film forming is further performed. The control method for a film forming apparatus according to claim 15 or 16, wherein the film forming apparatus is provided. In the fourth step, when it is determined that the state of the film forming apparatus is a state in which a failure has occurred in the monitor unit, it is characterized by further having a sixth step of continuing the film forming by the power control. The control method for a film forming apparatus according to any one of claims 15 to 17. The film forming apparatus is
A first shielding mode in which the rotation control unit rotates the shielding unit so that the non-shielding state period becomes the first length in a predetermined period.
A second shielding mode in which the rotation control unit rotates the shielding portion so that the non-shielding state period becomes a second length longer than the first length in the predetermined period.
Have,
In the first step, the first shielding mode is executed,
The control method for a film forming apparatus according to any one of claims 15 to 18, wherein in the third step, the first shielding mode is switched to the second shielding mode. 19. The rotation control unit is characterized in that, in the second shielding mode, the shielding unit is rotated so that the rotation speed in the non-shielding state is slower than the rotation speed in the shielding state. The method for controlling a film forming apparatus according to the description. The rotation control unit is characterized in that the shielding unit is rotated so that the rotation speed of the second shielding mode in the non-shielding state is slower than the rotation speed of the first shielding mode in the non-shielding state. The control method of the film forming apparatus according to claim 19 or 20. The rotation control unit is such that the frequency of being in the non-shielding state in the predetermined period of the second shielding mode is higher than the frequency of being in the non-shielding state in the predetermined period of the first shielding mode. The control method for a film forming apparatus according to claim 19, wherein the shielding portion is reciprocally rotated in the second shielding mode. The film forming apparatus is
A container that houses the film-forming material and is placed in the chamber,
A heating source that heats the container by being supplied with electric power, and a heating source whose supplied electric power is controlled by the heating control unit.
The control method for a film forming apparatus according to any one of claims 15 to 22, further comprising.

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