JP2000008164A - Production of base material with thin film and production device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce a base material with a thin film stably and with high precision without limitation of the life of a sensor of a film-forming rate measuring instrument. SOLUTION: In a method for producing the base material with the thin film, particles for film-forming are made to fly from an evaporation source 3 toward the base material, a sensor part 6 of the film-forming rate measuring instrument 5 is intermittently exposed to a trajectory 10 of the particles to intermittently control flying amount of the particles from the evaporation source so that measured value by the film-forming rate measuring instrument 5 during exposure is a desired value. When deviation between the measured value by the film-forming rate measuring instrument 5 and a desired set value exceeds a predetermined specified value during film- forming, the sensor part of the film-forming rate measuring instrument is continuously exposed to the trajectory of the particles for film-forming and further flying amount of the particles is continuously feed back controlled based on the measured value by the film-forming rate measuring instrument. Then, when deviation between the measured value by the film-forming rate measuring instrument 5 and a desired set value is entered within a predetermined specified value, the initial intermittent control is recovered.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a substrate with a thin film using a film-forming rate measuring device, a manufacturing apparatus and a substrate with a thin film, and more particularly, to a long roll. The present invention relates to a method and an apparatus for manufacturing a base material with a thin film, and a base material with a thin film manufactured by the method, capable of continuously forming a thin film stably on a base material for a long time.

[0002]

2. Description of the Related Art Conventionally, when a substrate with a thin film is manufactured using a vacuum evaporation apparatus, a film formation rate is measured using, for example, a quartz oscillator type film formation rate measuring apparatus, and the film formation rate is set to a desired value. By controlling to a value, a substrate with a thin film having a uniform film thickness distribution was manufactured. Here, the crystal oscillator type film forming rate measuring device utilizes the fact that the natural frequency F of the crystal oscillator changes according to the mass of the substance deposited on the crystal oscillator. The film formation rate per unit time is measured by obtaining the change ΔF of the natural frequency F of the vibrator.

However, in the conventional measuring method, as the film-forming particles accumulate on the quartz oscillator, the sharpness of the resonance is lost and the measurement accuracy is reduced. Noise was generated due to the non-uniformity of the film-forming particles, and it could not be used for a long time. Therefore, a method has been adopted in which a plurality of sensors are installed in a rotary holder, and when the life of the sensors expires, the sensors are replaced with new sensors and production is continued.

[0004]

However, if continuous production is to be carried out using a polymer film or the like wound into a roll as a substrate, even if the above-mentioned rotary sensor is used, it will take about 1,000 m. Only production is possible, especially when forming a multilayer film on the substrate by reciprocating the substrate film,
It could only withstand production of at most 3-4 hundred meters.

[0005] An object of the present invention is to solve the above-mentioned drawbacks and to provide a film forming rate measuring apparatus even when a substrate with a thin film is continuously produced using a polymer film or the like wound in a roll shape as the substrate. Without being substantially limited to the life of the sensor, a method capable of producing a base material with a thin film stably and with high precision, and a manufacturing apparatus, and a base material with a thin film manufactured by those methods and apparatuses. To provide.

[0006]

In order to solve the above-mentioned problems, a method of manufacturing a substrate with a thin film according to the present invention comprises the steps of: causing a film-forming particle to fly from an evaporation source toward the substrate; Exposing the sensor part of the film deposition rate measurement device intermittently, intermittently controlling the amount of particles flying from the evaporation source so that the value measured by the film deposition rate measurement device during exposure becomes a desired value, When manufacturing a semiconductor device, if the deviation between the value measured by the film formation rate measuring device and the desired set value exceeds a predetermined value during film formation, the sensor section of the film forming rate measuring device is formed. Continuous exposure control to the particle flight path based on the value measured by the film formation rate measurement device while continuously exposing to the flight path of the particles for use, and then the measurement value by the film formation rate measurement device and the desired set value Deviation within a predetermined value It consists method and returning to the original intermittent control upon entry.

In this manufacturing method, a long object wound in a roll shape is used as the substrate, and the substrate can be unwound and exposed to the flight path of the particles while being unwound.

[0008] In the intermittent control method, the average value of the measured values within a certain period of time after the start of the exposure among the measured values during the exposure is used for controlling the amount of flying particles. Can also. In obtaining the average value,
Set upper and lower limits.If the measured value is larger than the upper limit, replace the measured value with the upper limit.If the measured value is between the upper and lower limits, use the measured value as it is. When is also smaller, it is preferable to replace the measured value with a lower limit value and obtain an average value. Further, it is preferable that the ratio of the exposure time to the non-exposure time of the sensor unit is in the range of 1: 1 to 1:10.

Further, in this manufacturing method, when switching from the intermittent control mode to the continuous control mode or from the continuous control mode to the intermittent control mode, the control output value immediately before switching of the control mode before switching is controlled by the control method after switching. It is preferable to use the initial value of the output.

The base material with a thin film according to the present invention is manufactured by such a method. As the base material of the base material with a thin film, for example, a polymer film can be used.

Further, the apparatus for producing a base material with a thin film according to the present invention comprises: a decompression tank; an evaporation source disposed in the decompression tank; A film-forming rate measuring device for measuring a flying amount of film-forming particles from the evaporation source, a means for continuously or intermittently exposing a sensor unit of the film-forming rate measuring device to a particle flight path; Means for controlling the amount of particles flying from the evaporation source so that the value measured by the film formation rate measuring device therein becomes a desired value.

It is preferable that the film forming rate measuring apparatus is a quartz oscillator type film forming rate measuring apparatus.

[0013] Further, the substrate may be formed of a long material wound in a roll shape, and may have a means for unwinding the substrate and a means for winding the substrate.

Further, the particle flying amount control means may be configured to include means for obtaining an average value of measured values. Further, the particle flying amount control means, an upper limit value and a lower limit value are provided for the sensor measurement value output by the sensor unit, and when the input value from the sensor measurement value output means is larger than the upper limit value Upper and lower limit means for setting an upper limit value as an output signal, and when the value is between the upper limit value and the lower limit value, the input value is used as an output signal as it is; when the value is smaller than the lower limit value, the lower limit value is used as an output signal; Means for obtaining the average value using an output signal of the lower limit limiting means as an input signal. Further, it is preferable that a means is provided for adjusting the ratio between the exposure time and the non-exposure time of the sensor unit within a range of at least 1: 1 to 1:10.

In the present invention, the thin film is, for example, Al,
Al ₂ O ₃ , Zn, ZnO, Sn, SnO ₂ , Si, S
iO ₂ , Ti, TiO ₂ , MgF ₂ , ZrO ₂ , In,
By evaporating or scattering a base material such as ITO (indium tin oxide) alone or in combination,
It refers to a film deposited to a thickness of 1000 nm.

The term "substrate" as used in the present invention basically means a member having a surface on which a thin film is to be formed, such as a polymer film wound in a roll shape. A sheet member such as a member having a curved surface such as a plate or a lens may be conveyed continuously or intermittently.

Here, the polymer film is a film in which an organic polymer is melt-extruded, stretched in a longitudinal direction and / or a width direction, cooled and heat-fixed as necessary. Polyethylene, polypropylene, polyethylene terephthalate, polyethylene-2,
6 naphthalate, nylon 6, nylon 4, nylon 6
6, nylon 12, polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, wholly aromatic polyamide, polysulfone, polyphenylene sulfide, polyphenylene oxide and the like can be used. These organic polymers (organic polymers) may be obtained by polymerizing or blending a small amount of other organic polymers.

Further, known additives such as an ultraviolet absorber, an antistatic agent, a plasticizer, a lubricant, and a coloring agent may be added to the organic polymer.

As long as the object of the present invention is not impaired, the polymer film of the present invention may be subjected to corona discharge treatment, glow discharge treatment, or other surface roughening treatment prior to lamination of the thin film layer. And a known anchor coat treatment, printing and decoration may be applied.

The thickness of the polymer film as a substrate in the present invention is preferably in the range of 5 to 500 μm, more preferably in the range of 8 to 300 μm.

The method for depositing a thin film on a substrate includes electron beam heating, resistance heating, high frequency induction heating, sputtering, ion plating, CV
The D method or the like is used.

Further, the number of evaporation sources is not limited to one, and a plurality of evaporation sources may be provided in the width direction of the film. At this time, it goes without saying that a plurality of film forming rate measuring devices are provided corresponding to the evaporation sources.

It is also possible to apply oxygen, nitrogen, water vapor or the like as a reactive gas, or to apply reactive vapor deposition using ozone, ion assist or the like.

As a means for intermittently exposing the sensor section of the film forming rate measuring apparatus, particularly the quartz oscillator type film forming rate measuring apparatus, to the flight path of the evaporating particles, a rotary type or a reciprocating What is necessary is just to provide a mechanical shutter mechanism of a type.

The ratio of the exposure time to intermittently exposing the sensor portion to the evaporating particles and the non-exposure time are determined by the desired life extension ratio (the ratio at which the apparent life of the sensor can be extended as compared with the case of continuous use). ) May be determined in accordance with the above. However, in the case of using with a long life extension, the power applied to the evaporating unit is constant, the constant-value driving period in the uncontrolled state becomes long, and the film thickness to be formed due to process fluctuations is reduced. Since the allowable value may be exceeded, it is preferable to use it with the minimum necessary life extension.

The quartz-crystal-type film-forming-rate measuring apparatus utilizes the fact that the natural frequency F of the quartz oscillator changes according to the mass of a substance deposited on the quartz oscillator. The natural frequency F of the resonator also changes depending on the temperature of the crystal resonator. Therefore, when the sensor section is intermittently exposed to the evaporating particles, the change in the natural frequency F due to the mass of the substance deposited on the quartz oscillator and the quartz oscillation caused by the heat generated by the flying film-forming particles. The change in the natural frequency F due to the temperature rise of the element occurs at the same time, and the value immediately after the exposure does not indicate the correct film forming rate. Since the temperature rise of this crystal oscillator is stabilized in 10 to 20 seconds after exposure, after a lapse of a certain time after exposure, for example, 15 seconds or more, more preferably 30 seconds or more.
It is better to use measured values after seconds.

In many cases, noise is superimposed on the output of the crystal oscillator type film formation rate sensor due to various reasons. Therefore, even if a predetermined warm-up time has elapsed after exposure, if the power applied to the evaporator is controlled by a single measurement, the input power is changed unnecessarily large in response to the noise value, and the film is formed. The system itself tends to be unstable. Therefore, it is better to use the average value of the measured values within a certain time after a predetermined warm-up time has elapsed after exposure as the measured value used to control the power applied to the evaporator.

The time for obtaining the average value is as follows:
Although it depends on the stability of the film forming system, it is preferably 10 seconds or more. Further, as described above, noise is often superimposed on the output of the crystal resonator type film deposition rate sensor due to various causes. Therefore, in obtaining the average value, an upper limit value and a lower limit value are provided, and the measured value is determined. If it is larger than the upper limit, replace it with the upper limit.If it is between the upper and lower limits, use the measured value as it is.If it is smaller than the lower limit, replace it with the lower limit and obtain the average value. Is preferred.

When the film forming system itself is not in a steady state immediately after the start of production or the like and the change in the film forming rate is large,
It is preferable to perform continuous control by known PID control or the like, and switch to intermittent control according to the present invention when the film forming system reaches a steady state.

When the film forming system has reached a steady state and is stable, the above-described intermittent control enables high-precision and highly stable control. However, when the film forming system is in an unsteady state, the intermittent control is performed at regular intervals. Only the control operation is performed, so that the response is delayed and stable control cannot be performed.

For example, when impurities are mixed in the evaporation source, or when the evaporating substance adhering to the inside of the evaporator falls and enters the evaporation source, a phenomenon called abnormal evaporation occurs.
During a fixed time (several minutes to about 10 minutes), the evaporation rate fluctuates more than a steady value. If the conventional so-called continuous control method is used, even if abnormal evaporation occurs and the evaporation rate fluctuates more than the steady-state value, it is immediately detected and feedback is applied, so the film formation rate should be controlled to a constant value. Can be.

However, in the intermittent control, the control operation is performed only at regular intervals, and since the proportional control cannot apply a large feedback gain, the response is greatly delayed and the film forming rate can be controlled to a constant value. First of all, that part becomes a spec out.

Therefore, according to the present invention, if the deviation between the output value of the film-forming rate sensor of the quartz oscillator type and a desired set value exceeds a predetermined value, the film-forming system may become unsteady due to abnormal evaporation or the like. When it is determined that the state has been reached, the system is immediately switched to the continuous control method.

Further, since these abnormal evaporation phenomena last for a certain period of time (about several minutes to 10 minutes), a quartz oscillator type film forming rate sensor is used after a certain period of time inherent to the film forming system has been switched to the continuous control method. If it is confirmed that the deviation between the output value and the desired set value is within a predetermined fixed value, and the control is returned to the original intermittent control method, the longevity of the sensor which is the main object of the present invention is achieved. In addition, highly accurate and stable film formation can be performed.

As described above, since the output of the quartz-crystal-type film-forming rate sensor is often superimposed with noise due to various reasons, the quartz-crystal-type film-forming rate sensor can be used even when the continuous control method is used. It is preferable that the output of the film rate sensor be subjected to noise removal processing such as a noise filter and a moving average.

As a continuous control method, a well-known PID is used.
A control method or the like is used. However, if switching is performed without any operation, the initial value of the control output value of the continuous control method is 0, which causes a large fluctuation in the film forming system. Therefore, when switching from the intermittent control method to the continuous control method, it is necessary to set the control output value immediately before switching of the intermittent control method as the initial value of the control output of the continuous control method so that the film forming system does not fluctuate at the time of control switching. is there.

When returning from the continuous control method to the intermittent control method, it is necessary to set the control output value immediately before switching to the continuous control method as the initial value of the control output of the intermittent control method.

[0038]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a preferred embodiment of the apparatus for producing a substrate with a thin film according to the present invention will be described with reference to the drawings. FIG. 1 shows an apparatus for producing a base material with a thin film according to one embodiment of the present invention. The vapor deposition chamber 1 is isolated from the atmosphere by a decompression tank 2 and is 1 × 10 4 by a vacuum pump (not shown).
^The degree of vacuum is kept at ^{-3 to 1} Pa.

In the vapor deposition chamber 1, an evaporation source 3, an electron gun 4, and a crystal sensor section of a crystal oscillator type film forming rate measuring device 5 for evaporating the film forming material to fly the film forming particles upward. 6. There are provided means 8 for feeding out a film 7 wound in a roll shape as a substrate, and means 9 for winding up the film 7 after processing. The front side of the crystal sensor 6, that is, the evaporation source 3
A rotary shutter 11 driven by a driving device 12 is provided on a sensor surface side facing a flight path 10 of particles from the apparatus.

A deposition rate measuring device 5 is provided outside the deposition chamber 1.
And a control device 14 for controlling the output of the electron gun 4 to control the amount of particles flying from the evaporation source 3. The measurement output (measurement value signal) of the crystal sensor 6 is input to the sensor measurement value output means 13, converted into a measurement value output, and then input to the control device 14. This control device 1
4 outputs a control signal to the electron gun 4. Also,
A signal for controlling the opening / closing operation of the shutter 11, the operation time, and the like is output from the control device 14 to the drive device 12 of the shutter 11.

In this embodiment, the measured value output from the sensor measured value output means 13 of the quartz vibrating film deposition rate measuring apparatus 5 is controlled by the upper and lower limit limiting means 15 and the noise filter 18 of the particle flight amount control apparatus 14 of the entire vapor deposition system. Is entered first.

The upper and lower limit means 15 are provided with an upper limit value and a lower limit value. When the input value from the sensor measured value output means 13 is larger than the upper limit value, the upper limit value is used as an output signal. If the input value is within the range, the input value is used as an output signal as it is, and if the input value is smaller than the lower limit value, the lower limit value is used as the output signal and output to the intermittent average value calculating means 16.

The intermittent average value calculating means 16 includes an intermittent control unit 1
An average value after a lapse of a predetermined time after the shutter 11 is opened is obtained based on the control signal from the controller 7 and is output to the intermittent controller 17.

Further, the intermittent control unit 17 calculates a control output in accordance with the average value of the measured values input from the intermittent average value calculating means 16, a preset set value and a feedback gain, and calculates the average value and the set value. Is output to the overall control unit 21.

The noise filter 18 removes high frequency components included in the measured value output from the sensor measured value output means 13 and outputs the result to the moving average value calculating means 19.

The moving average value calculating means 19 performs a moving average process on the input value from the noise filter 18 based on a preset moving average time, and continuously processes the obtained processed signal. Output to

Further, the continuous control section 17 calculates the PID control output according to the moving average value of the measured value inputted from the moving average value calculating means 18 and a preset set value and control constant separately. And the deviation value of the set value and the control output are output to the overall control unit 21.

The overall control unit 21 selectively uses two control modes of an intermittent control system and a continuous control system while monitoring the state of the entire film forming system, controls output to the electron gun 4, and controls the shutter 11.
Output the open / close control signal to

Here, a quartz oscillator type film forming rate sensor 6
Is based on the fact that the natural frequency F of the quartz oscillator changes according to the mass of the substance deposited on the quartz oscillator, and the change Δ
By calculating F, the film formation rate per unit time is measured. Although high-precision measurement is possible in principle, it is actually a measurement signal on which high-frequency noise having a large amplitude is superimposed due to various causes.

The film 7 as a base material for forming a thin film is continuously fed at a constant speed from a film feeding means 8 and wound up by a film winding means 9. At this time, metal molecules that should form a thin film from the surface of the evaporation source 3 by the electron beam emitted from the electron gun 4,
Metal oxide molecules and the like are released, and the particles travel in the flight path 10
And is deposited on the surface of the moving film 7.

Since the portion of the film 7 where the thin film is formed becomes an opening of a certain size, the thickness of the formed thin film depends on the ratio of the molecules released from the evaporation source 3 per unit time,
It is a function of the moving speed of the film 7. In order to make the thickness distribution of the thin film formed on the film 7 uniform in the longitudinal direction, it is necessary to measure the ratio of the molecules released from the evaporation source 3 per unit time and control it to a desired value. .

When the vapor deposition is started, the rotary shutter 11 is opened by the driving means 12 to continuously expose the sensor portion of the quartz sensor 6 to the evaporated particles. In addition, a control signal is output from the overall control unit 21 of the control device 14 of the entire vapor deposition system to the continuous control unit 20 to start the continuous control unit 20 and the continuous control unit 2
The control output from 0 is output to the electron gun 4 via the overall control unit 21. Thus, an unstable process in an unsteady state immediately after the start is stably and continuously controlled.

After a lapse of a predetermined time, the process enters a steady state, and it is determined that the deviation between the moving average value of the measured value calculated by the moving average value calculating means 19 and a separately set value is within a certain range. After the control unit 21 confirms, the control mode is switched from the continuous control to the intermittent control.

That is, the control output from the overall control unit 21 at the time of switching from the continuous control to the intermittent control is stored as the control output initial value of the intermittent control, and the overall control unit 2
The control output from 1 is also held at the initial value.

Further, the rotary shutter 11 is rotated by the driving means 12 at regular intervals in response to a control signal from the overall control section 21, and the sensor section of the quartz sensor 6 is intermittently exposed to evaporated particles. Then, the quartz-crystal-type film-forming-rate measuring device 5 immediately starts to output, but since hot film-forming particles are deposited on the cooled sensor part, the temperature of the crystal unit other than the frequency change due to the mass of the deposited particles is increased. A frequency change due to the change occurs, and the correct film formation rate is not shown. Therefore, after the shutter is opened, the measured value until the temperature change of the crystal unit falls within a certain range is not used.

When the warm-up time is over, measurement is performed. However, since noise is often superimposed on the output of the crystal oscillator film formation rate measuring apparatus 5, an average value over a certain period of time is taken to obtain the measured value. You had better.

If the average value of a signal containing noise is obtained as it is, the average value may be biased by the noise. Therefore, an upper limit and a lower limit are provided, and when the measured value is larger than the upper limit, the measured value is replaced with the upper limit. When the measured value is between the upper limit and the lower limit, the measured value is used as it is,
If the average value is obtained by substituting the lower limit value when the average value is smaller than the lower limit value, the influence of noise is reduced and a correct average value can be obtained. These series of signal processes are performed by the upper and lower limit limiting unit 15 and the intermittent average value calculating unit 16.

A deviation value between the intermittent average value of the measured value calculated by the intermittent average value calculation means 16 and a separately set value in the overall control unit 21 is obtained, and a value obtained by multiplying the deviation value by a process gain is obtained. Is added to the control output initial value described above.

When this value is output as an electron gun control signal, the process can be controlled with a very small range of variation around the desired value.

Here, the overall control unit 21 switches the control mode from intermittent control to continuous control when the deviation value exceeds a predetermined value. That is, the overall control unit 21
A control signal is output, and the rotary shutter 11 is opened by the driving means 12 to continuously expose the sensor portion of the crystal sensor 6 to the evaporated particles.

At the same time, the control mode is switched from intermittent control to continuous control. At this time, the control output from the overall control unit 21 is stored as the control output initial value of the continuous control. The general control unit 21 is activated after resetting the continuous control unit 20 once, and the control output from the continuous control unit 20 is added to the above-described control output initial value, and is output to the electron gun 4 via the general control unit 21.

As described above, by switching between the two control modes of the intermittent control and the continuous control in accordance with the deviation from the set value, even if the film forming system is in an unsteady state, the main object of the present invention is the sensor. A high-precision and highly stable film formation can be performed without impairing the service life of the device.

[0063]

Next, the present invention will be described based on embodiments. Example 1 A polyethylene terephthalate film having a width of 500 mm, a thickness of 75 μm, and a length of 3,600 m was continuously vapor-deposited with SiO ₂ at a deposition rate of 1 nm / sec while being rewound in a vacuum at a speed of 2 m / min. At this time, the length is 3,600 m
Among them, the front lead part and the rear lead part were each taken 30 m, and the product part was 3,540 m. The quartz crystal film deposition rate measuring device installed six sensors in a rotary holder, and when the life of the sensor expired, replaced it with a new sensor and continued production. The rotary shutter 11 performed an intermittent operation of closing for 1 minute and 30 seconds and then opening for 45 seconds (life extension rate: 3).

The sensor output during the first 30 seconds when the rotary shutter 11 is open is not used, and after collecting the remaining 15 seconds of data, an average value is obtained, and the upper limit is increased by 5% of the average value. After setting the lower limit to a value that is 5% lower than the average value and performing upper and lower limits on the collected data using these upper and lower limits,
The average value was determined again and used as the measurement output. Multiply the deviation between the measured output and the target film formation rate by a separately determined process gain,
Added to the current electron gun control output.

The timing of switching between the two control modes, the intermittent control and the continuous control, is set when the deviation between the measured value and the set value exceeds ± 2.5% of the set value, and 10 minutes after the control mode is switched. It was decided whether to return to the original control mode.

As a result, the vapor deposition was completed with an effective vapor deposition time of 1,770 minutes. During this period, the control mode was switched twice from the intermittent control to the continuous control, and the control mode was returned to the original control mode in 10 minutes. The variation in the film thickness was within the target value ± 3%, and was within this range even in the portion where the control mode switching occurred. Further, this part was sampled and analyzed, but no abnormality was found.

At this time, it was possible to use the SiO ₂ sensor until the average thickness of 6,100 nm adhered to one quartz oscillator sensor. As a result, the use time per one crystal oscillator sensor is 6,100 seconds, but since six sensors are switched and used, it can be used for 610 minutes, which is a total of six times. Of these, 10 for continuous control at the start of deposition
Since the switching from the intermittent control to the continuous control is performed twice for 10 minutes each, a total of 30 minutes are used for the continuous control and the remaining 580 minutes are used for the intermittent control. In the intermittent control, the life extension rate is 3, so the actual deposition time by the intermittent control is tripled to 1,7.
It becomes 40 minutes, and the effective deposition time becomes 1,770 minutes in combination with the deposition time of 30 minutes by the continuous control. That is, with this method, highly accurate film formation control can be executed with an effective life extension ratio of 2.9.

COMPARATIVE EXAMPLE 1 Under the same conditions as in Example 1, control was performed by the continuous control method for only 10 minutes at the start of vapor deposition, and thereafter, vapor deposition was performed only by intermittent control without switching the control mode to continuous control. As a result, the vapor deposition was completed in an effective vapor deposition time of 1,770 minutes. During this period, the abnormal evaporation phenomenon occurred twice, and it took 20 minutes each to return to the original stable state.

FIG. 2 shows the crystal sensor measurement output value and the control output to the electron gun at this time. Even if the measured output value of the quartz sensor greatly changes due to abnormal evaporation, the control operation is intermittent, so that sufficient feedback cannot be performed and the control is not interrupted, and the control output to the electron gun when abnormal evaporation stops. Significantly changes, and it takes approximately the same time as the abnormal evaporation to return to the normal value.

The variation in the film thickness in the portions other than the abnormal evaporation portion was within the target value ± 3%, but the variation in the film thickness in the abnormal evaporation portion greatly exceeded the target value ± 3% and exceeded the target value ± 5%. There was also.

At this time, as in the first embodiment, the first five sensors averaged SiO ₂ per crystal oscillator sensor.
Could be used until a thickness of 6,100 nm was deposited. The last one was used until it deposited to a thickness of 5,300 nm. As a result, the operating time for the first five quartz oscillator sensors is 6,100 seconds, but since the five sensors were switched and used, a total of 508.3 minutes could be used, which is five times the total. , Last used time 88.3
Minutes and used for 596.6 minutes. Of these, 10 minutes were used for continuous control at the start of deposition, and the remaining 5
86.6 minutes have been used for intermittent control. In the intermittent control, the life extension rate is 3, so that the vapor deposition time by the actual intermittent control is tripled to 1,760 minutes, and the effective vapor deposition time is 1,770 minutes in combination with the vapor deposition time of 10 minutes by the continuous control.

That is, according to the continuous vapor deposition method, 1,220 m
According to this method, 3,460 m could be produced with an effective life extension of 2.8. However, the defective portion of 80 m out of the total deposition length of 3,540 m is included. Considering the raw material loss of this portion, the man-hour for removing the defective portion, and the loss at the time of constant length cutting before and after the defective portion, the first embodiment is considered.
It turns out that it is inferior.

COMPARATIVE EXAMPLE 2 Under the same conditions as in Example 1, continuous measurement was carried out with a quartz crystal type film forming rate measuring apparatus without using the rotary shutter 11, and production was performed while performing PID control using the measurement results. Was. As in the case of the first embodiment, the quartz-crystal-type film-forming-rate measuring apparatus was equipped with six sensors in a rotary holder, and when the life of the sensor expired, replaced it with a new sensor and continued production.

As a result, it could be used until the average thickness of SiO ₂ per crystal resonator sensor was 6,050 nm. As a result, the use time per one crystal oscillator type sensor is 6,050 seconds, and since the six sensors are switched and used, the final deposition time is 36,3, which is six times.
00 seconds (= 605 minutes). As a result, continuous 1,21
Only 0m production was possible. In addition, before replacement with a new sensor, a spike-like large noise is superimposed on the measurement signal in a portion near the life of the sensor, and the PID control attempts to control the spike noise, resulting in an over-response state, and the variation in the film thickness is also a target value. A portion exceeding ± 5% was generated, and it was necessary to remove the portion as a product, and the yield was reduced.

[0075]

As described above, according to the present invention, the following effects can be obtained. With a simple intermittent measurement configuration, stable production can be achieved without being limited by the life of the crystal unit-type film deposition rate measuring device when continuously producing using a polymer film wound in a roll shape as a substrate. And a base material with a thin film can be manufactured with high precision. By switching the control mode between the intermittent control and the continuous control, it is possible to produce a thin-film base material more stably and with high precision without generating a defective product even when the process becomes unsteady due to an abnormal evaporation phenomenon. Can be.

The quartz-crystal-crystal-type film-forming-rate sensor measures the change in the natural frequency due to the deposition of evaporated matter on the quartz crystal. The noise that is superimposed increases as the amount of deposit increases. However, using the data processing according to the present invention makes it possible to stably produce even if a little noise is superimposed. Yes, leading to improved yield.

The base material with a thin film obtained by the present invention, in particular, a base material having a polymer film as a base material can be used as a magnetic recording material for recording video signals and data, and for packaging, for capacitors, for anti-reflection, etc. It can be suitably used for various applications. In particular, ITO (indium tin oxide), SiO ₂ , Z
A film on which a thin film such as rO ₂ is formed is particularly useful for preventing reflection by attaching it to a display surface of an information display device such as a cathode ray tube or a liquid crystal display device or disposing it on the front surface of the display surface.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an apparatus for manufacturing a base material with a thin film according to an embodiment of the present invention.

FIG. 2 is a characteristic diagram illustrating a control signal when abnormal evaporation occurs in Comparative Example 1.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Deposition chamber 2 Decompression tank 3 Evaporation source 4 Electron gun 5 Deposition rate measuring device 6 Crystal sensor 7 Film as substrate 8 Film sending means 9 Film winding means 10 Particle flight path 11 Rotary shutter 12 Driving means Reference Signs List 13 Sensor measured value output means 14 Control device 15 Upper and lower limit limiting means 16 Intermittent average value calculating means 17 Intermittent control unit 18 Noise filter 19 Moving average value calculating means 20 Continuous control unit 21 Overall control unit

 ────────────────────────────────────────────────── ─── Continued on the front page F term (reference) 4K029 AA11 AA25 BA03 BA10 BA15 BA17 BA18 BA35 BA42 BA43 BA44 BA45 BA46 BA47 BA48 BA49 BB02 BD11 CA01 DA12 DB21 EA02 EA09 JA10 KA03

Claims (12)

[Claims] 1. A film-forming particle is caused to fly from an evaporation source toward a substrate, and a sensor section of the film-forming rate measuring device is intermittently exposed to a flight path of the particle. When manufacturing a base material with a thin film by intermittently controlling the amount of particles flying from the evaporation source so that the measured value becomes a desired value, during film formation, during the film formation, the measured value by the film formation rate measuring device and the desired set value If the deviation exceeds a predetermined value, the sensor section of the film deposition rate measuring device is continuously exposed to the flight path of the particles for film deposition, and the particle is measured based on the value measured by the film rate measuring device. It is characterized by continuous feedback control of the flying amount and then returning to the original intermittent control when the deviation between the measured value by the film deposition rate measuring device and the desired set value falls within a predetermined fixed value. To produce a substrate with a thin film. 2. The method according to claim 1, wherein the intermittent control of the flying amount of the particles uses an average value of measured values within a fixed time after a predetermined time has elapsed from the start of the exposure, among the measured values during the exposure. Manufacturing method of base material with thin film. 3. An upper limit and a lower limit are set when calculating the average value. If the measured value is larger than the upper limit, the measured value is replaced with the upper limit, and if the measured value is between the upper limit and the lower limit. The method for producing a base material with a thin film according to claim 2, wherein the measured value is used as it is, and when the measured value is smaller than the lower limit value, the measured value is replaced with the lower limit value to obtain an average value. 4. The sensor according to claim 1, wherein a ratio of an exposure time to a non-exposure time of the sensor unit is in a range of 1: 1 to 1:10.
4. The method for producing a base material with a thin film according to any one of items 1 to 3. 5. When switching from the intermittent control mode to the continuous control mode or from the continuous control mode to the intermittent control mode, the control output value immediately before switching of the control mode before switching is set as the initial value of the control output of the control mode after switching. A method for producing a substrate with a thin film according to any one of claims 1 to 4. 6. A depressurizing tank, an evaporation source disposed in the depressurizing tank, support means for the substrate in which the substrate is disposed facing the evaporation source, and a flying amount of the film-forming particles from the evaporation source A film-forming rate measuring device for measuring the temperature, a means for continuously or intermittently exposing a sensor section of the film-forming rate measuring device to a flight path of particles, and a value measured by the film-forming rate measuring device during the exposure is desired. Means for controlling the amount of particles flying from the evaporation source so as to obtain the value of (1). 7. The apparatus for manufacturing a base material with a thin film according to claim 6, wherein the film forming rate measuring apparatus is a quartz oscillator type film forming rate measuring apparatus. 8. The apparatus for manufacturing a substrate with a thin film according to claim 6, wherein said particle flying amount control means has means for obtaining an average value of measured values. 9. The particle flying amount control means is provided with an upper limit value and a lower limit value for a sensor measurement value output by the sensor unit, and an input value from the sensor measurement value output means is larger than the upper limit value. If the upper limit value is an output signal, and if it is between the upper limit value and the lower limit value, the input value is used as an output signal as it is, and if it is smaller than the lower limit value, the lower limit value is an output signal and upper and lower limit limiting means. Means for calculating the average value with the output signal of the upper and lower limit limiting means as an input signal,
An apparatus for producing a base material with a thin film according to claim 8. 10. The method according to claim 6, further comprising: means for adjusting a ratio between an exposure time and a non-exposure time of the sensor unit within a range of at least 1: 1 to 1:10. Equipment for manufacturing substrates with thin films. 11. A base material with a thin film manufactured by the manufacturing method according to claim 1. 12. The base material with a thin film according to claim 11, manufactured using a base material composed of a polymer film.