JP2020023737A - Monitoring device for film deposition rate and film deposition apparatus - Google Patents

Abstract

To provide a monitoring device for a film deposition rate capable of improving a production tact while extending a service life of an apparatus.SOLUTION: A monitoring device for a film deposition rate detects a film deposition rate of a film deposition material 400 to a film deposition object 100 based on a change in resonance frequency of a crystal oscillator 13a when the film deposition material 400 sublimated or evaporated from an evaporation source 300 deposits on a crystal oscillator 13. The monitoring device includes a shielding member 12 which rotates so as to be able to take a shielding state where a shielding part 12b locates between the evaporation source 300 and the crystal oscillator 13 and a non-shielding state where an opening part 12a locates between the evaporation source 300 and the crystal oscillator 13. The monitoring device has a first shielding mode where the shielding member 12 is rotated such that the non-shielding state lasts a first period in a predetermined period, and a second shielding mode where the shielding member 12 is rotated such that the non-shielding state lasts a second period longer than the first period in the predetermined period.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a film forming rate monitor used for a film forming apparatus.

  As a film forming apparatus for forming a thin film on a substrate, a container (crucible) containing a film forming material is heated in a vacuum chamber, and the film forming material is evaporated (sublimated or vaporized) and ejected to the outside of the container. There is a vacuum deposition type film forming apparatus that forms a thin film by attaching and depositing on a surface. In such a film forming apparatus, in order to obtain a desired film thickness, a film forming rate is acquired using a monitor unit arranged in a vacuum chamber, and a heating of a container is controlled based on the acquired film forming rate. May have equipment.

  The film-forming rate monitor acquires the film-forming rate based on the amount of change in the natural frequency of the crystal oscillator due to the adhesion of the film-forming material, and controls the amount of the film-forming material attached to the crystal oscillator. A configuration including a rotary shielding member (chopper) is known (Patent Document 1). The shielding member has a shielding portion that shields between the crystal oscillator and the evaporation source of the film-forming material so as to prevent the film-forming material from adhering, and an opening for allowing the film-forming material to adhere. The rotation is controlled by a servomotor so as to periodically switch between a shielded state and a non-shielded state. When the amount of deposited film exceeds a predetermined amount, the crystal unit needs to be replaced due to a decrease in detection accuracy.Therefore, the life of the monitor unit can be extended by suppressing the amount of deposited film with a shielding member as much as possible. It is planned.

  On the other hand, in order to improve the detection accuracy, as a base treatment (pre-coating), the surface of the crystal unit is previously covered with a certain amount of film-forming material, and then formed based on a change in the natural frequency due to an increase in the amount of adhesion thereafter. The film rate may be detected. For example, depending on the compatibility between the crystal unit and the film-forming material, the film-forming material is difficult to adhere in the early stage of use with a small amount of adhesion, and the film-forming rate is not stable unless some amount of the material adheres to each other and the materials adhere to each other. Therefore, such a base processing is performed for accurate detection.

  From the viewpoint of extending the life of the monitor unit, it is preferable that the exposure time of the crystal unit to the evaporation source be short. On the other hand, from the viewpoint of improving manufacturing tact, the exposure time in the undercoating process should be increased to quickly form the underlayer. Is preferred. The length of the exposure time in a predetermined period, that is, the length of time of the non-shielding state per unit time is determined by the size of the opening (non-shielding portion) in the shielding member (rotational direction), assuming constant speed control. Width). For example, it is conceivable to configure the shielding member such that the size of the opening is variable and change the size of the opening according to the content of the process. However, the configuration of the apparatus is complicated, and there is a problem in terms of cost. is there.

JP 2014-066673 A

  SUMMARY OF THE INVENTION It is an object of the present invention to provide a film forming rate monitoring apparatus capable of improving manufacturing tact while extending the life of the apparatus.

In order to achieve the above object, a film formation rate monitoring device of the present invention
A film formation rate monitoring device for detecting a film formation rate of a film formation material for a film formation target,
A quartz oscillator for attaching the film-forming material sublimated or vaporized from an evaporation source,
A shielding portion for preventing the film forming material from adhering to the crystal oscillator, and an opening for allowing the adhesion, and the shielding between the evaporation source and the crystal oscillator. A shielding member that rotates so as to be able to take a shielding state in which the portion is located, and a non-shielding state in which the opening is located between the evaporation source and the quartz oscillator,
A control unit that controls the rotation of the shielding member,
An acquisition unit configured to acquire a film formation rate based on a change in a resonance frequency of the crystal unit,
With
A first shielding mode in which the control unit rotates the shielding member such that a period in which the non-shielding state is set in the predetermined period is a first length;
A second shielding mode in which the control unit rotates the shielding member so that the period in which the non-shielding state is provided in the predetermined period has a second length longer than the first length;
It is characterized by having.
In order to achieve the above object, a film forming apparatus of the present invention includes:
A chamber for accommodating a film formation target;
An evaporation source container that accommodates a film forming material, which is disposed in the chamber,
A heating control unit that has a heating unit that heats the evaporation source container, and controls a heating temperature of the evaporation source container,
Disposed in the chamber, a film deposition rate monitor of the present invention,
With
The heating control unit controls the heating temperature based on a film formation rate obtained by the film formation rate monitoring device.

  ADVANTAGE OF THE INVENTION According to this invention, the improvement of the manufacturing tact can be aimed at, aiming at extending the life of an apparatus.

Schematic sectional view of a film forming apparatus in an embodiment of the present invention FIG. 1 is a schematic diagram illustrating a configuration of a film formation rate monitoring apparatus according to an embodiment of the present invention. FIG. 2 is a schematic view illustrating a configuration of a crystal monitor head and a shielding member according to an embodiment of the present invention. Explanatory drawing of rotation control of a shielding member in an example of the present invention.

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative examples of preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these unless otherwise specified. It is not intended.

[Example 1]
With reference to FIGS. 1 to 4, a film forming rate monitoring device and a film forming device according to an embodiment of the present invention will be described. The film forming apparatus according to the present embodiment is a film forming apparatus for forming a thin film on a substrate by vacuum evaporation. The film forming apparatus according to this embodiment is used for manufacturing various electronic devices such as various semiconductor devices, magnetic devices, and electronic components, and on a substrate (including a substrate on which a laminate is formed) in manufacturing optical components and the like. Used to deposit thin films. More specifically, the film forming apparatus according to the present embodiment is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Above all, the film forming apparatus according to this embodiment is particularly preferably applicable to the manufacture of organic light-emitting elements such as organic EL (Electro Luminescence) elements and organic photoelectric conversion elements such as organic thin-film solar cells. Note that the electronic device in the present invention includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) including a light emitting element, and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element. It is a thing. The film forming apparatus according to this embodiment can be used as a part of a film forming system including a sputtering apparatus and the like.

<Schematic configuration of film forming apparatus>
FIG. 1 is a schematic diagram illustrating a configuration of a film forming apparatus 2 according to an embodiment of the present invention. The film forming apparatus 2 includes a vacuum chamber (film forming chamber, vapor deposition chamber) 200 whose inside is maintained in a vacuum atmosphere or an inert gas atmosphere such as a nitrogen gas by an exhaust device and a gas supply device (not shown). In this specification, “vacuum” refers to a state in a space filled with a gas having a pressure lower than the atmospheric pressure.

  When the substrate 100, which is a film formation target, is transferred into the vacuum chamber 200 by a transfer robot (not shown), the substrate 100 is held by a substrate holding unit (not shown) provided in the vacuum chamber 200 and mounted on the upper surface of the mask 220. Is placed. The mask 220 is a metal mask having an opening pattern 221 corresponding to the thin film pattern formed on the substrate 100, and is set inside the vacuum chamber 200 in parallel with a horizontal plane. The substrate 100 is placed on the upper surface of the mask 220 by the substrate holding unit, so that the substrate 100 is installed inside the vacuum chamber 200 so as to be parallel to the horizontal plane and to cover the lower surface, which is the surface to be processed, with the mask 220.

  An evaporation source device 300 is provided below the mask 220 inside the vacuum chamber 200. The evaporation source device 300 generally includes an evaporation source container (crucible) 301 (hereinafter, referred to as a container 301) that stores a film-forming material (evaporation material) 400 and a heating unit that heats the film-forming material 400 stored in the container 301. And the heater 302. The film-forming material 400 in the container 301 evaporates in the container 301 by the heating of the heater 302, and is jetted out of the container 301 through a nozzle 303 provided on the upper part of the container 301. The film-forming material 400 sprayed out of the container 301 is vapor-deposited on the surface of the substrate 100 provided above the apparatus 300 in accordance with the opening pattern 221 provided in the mask 220.

  Although not shown, the evaporation source device 300 further includes a reflector and a heat transfer member for increasing the heating efficiency of the heater 302, a frame accommodating the entire components of the evaporation source device 300 including them, a shutter, and the like. May be provided. In addition, the evaporation source device 300 may be configured to be relatively movable with respect to the fixedly mounted substrate 100 in order to uniformly perform film formation on the entire substrate 100.

  The film forming apparatus 2 according to this embodiment includes a film forming rate monitor 1 as a means for detecting the amount of vapor of the film forming material 400 ejected from the container 301 or the thickness of a thin film formed on the substrate 100. It has. The film formation rate monitoring device 1 intermittently repeats the shielding state and the non-shielding state of a part of the film forming material 400 ejected from the container 301 by the shielding member 12, and the crystal oscillation head provided in the crystal monitoring head 11. It is configured to attach to a child. By detecting the amount of change (decrease) in the resonance frequency (natural frequency) of the quartz oscillator due to the deposition of the film-forming material 400, the film-forming rate (evaporation rate) corresponding to a predetermined control target temperature is determined. The amount of deposition (the amount of deposition) of the deposition material 400 per unit time can be obtained. By feeding back this film formation rate to the setting of the control target temperature in the heating control of the heater 302, the film formation rate for the substrate 100 can be arbitrarily controlled. Therefore, by always monitoring the discharge amount of the film-forming material 400 or the film thickness on the substrate 100 during the film-forming process by the film-forming rate monitoring device 1, highly accurate film-forming can be performed. The control unit (arithmetic processing unit) 20 of the film forming apparatus 2 according to the present embodiment includes a monitor control unit 21 that controls the operation of the monitor unit 10, measures and obtains a film forming rate, and controls heating of the evaporation source device 300. And a heating control unit 22 that performs the following.

<Deposition rate monitor>
FIG. 2 is a schematic diagram illustrating a schematic configuration of the film formation rate monitoring device 1 according to the present embodiment. As shown in FIG. 2, the film formation rate monitoring apparatus 1 according to the present embodiment includes a monitor unit 10 including a monitor head 11, a shielding member (chopper) 12, and the like, and a monitor control unit 21. The monitor unit 10 includes a monitor head 11, a shielding member 12, a servo motor 16 as a rotation driving source of a crystal holder (rotary support) 14 incorporated in the crystal monitoring head 11, and a rotation driving source of the shielding member 12. And a servo motor 15. The monitor control unit 21 includes a shielding member control unit 212 that controls the rotational driving of the shielding member 12, a film formation rate acquisition unit 213 that acquires a resonance frequency (a change amount) of the crystal unit 13, and a crystal holder 14. And a holder control unit 214 for controlling the rotation drive.

  FIG. 3 is a schematic diagram showing an arrangement relationship between the monitor head 11 (crystal holder 14) and the shielding member 12 when viewed along the respective rotation axis directions. As shown in FIG. 3, a crystal holder 14 that supports a plurality of crystal units 13 (13a, 13b) arranged at equal intervals in the circumferential direction is incorporated in the monitor head 11. The monitor head 11 is provided with one monitor opening 11a which is slightly larger than the crystal unit 13, and the crystal holder 14 holds one of the supported crystal units 13 through the monitor opening 11a. It is supported at a position (rotational phase) exposed to the outside (evaporation source device 300).

As shown in FIGS. 2 and 3, the center of the crystal holder 14 is connected to the motor shaft 16 a of the servomotor 16, and the crystal holder 14 is driven to rotate by the servomotor 16. Thus, the crystal resonator 13 exposed to the outside via the monitor opening 11a can be sequentially switched. That is, of the plurality of crystal oscillators 13 supported by the crystal holder 14, one crystal oscillator 13a is located at a position where the phase overlaps with the monitor opening 11a, and the other crystal oscillator 13b is used or replaced. It is located at a position hidden inside the monitor head 11 as a crystal oscillator. When the quartz oscillator 13 exposed to the outside through the monitor opening 11a reaches the end of its life when the amount of the film-forming material 400 attached exceeds a predetermined amount, the quartz holder 14 rotates and a new quartz oscillator 13 is inserted. Is moved to the exposure position overlapping the monitor opening 11a.
The rotation control of the servo motor 16 by the holder control unit 214 is performed based on the rotation position (rotation phase) of the crystal holder 14 detected by the phase position detection unit 18 composed of the detection unit 18a and the detected unit 18b. Note that a known position sensor such as a rotary encoder may be used as the position (phase) detecting means.

  As shown in FIG. 3, the shielding member 12 is a substantially disk-shaped member, the center of which is connected to the motor shaft 15 a of the servomotor 15, and either one of clockwise or counterclockwise rotation by the servomotor 15. In a single direction. The shielding member 12 is provided with a fan-shaped opening slit (opening, non-shielding portion) 12 a at a position away from the center of rotation, and at a position where its rotation trajectory overlaps the monitor opening 11 a of the monitor head 11. I have. The opening slit 12a is configured to have a width in the rotation direction smaller than the width of the monitor opening 11a and smaller than the width of the crystal unit 13a exposed in the monitor opening 11a.

As shown in FIG. 2 and FIG. 3, when the shielding member 12 rotates, the relative position (relative phase) of the opening slit 12a with respect to the monitor opening 11a and the position (opening position, non-shielding position) overlapping the monitor opening 11a. , Non-overlapping position (non-opening position, shielding position). As a result, the area of the shielding member 12 excluding the opening slit 12a becomes the shielding portion 12b, and when this is in a position (phase) that overlaps (covers) the monitor opening 11a, the deposition material 400 adheres to the crystal unit 13a. Is blocked (non-open state). Further, when the opening slit 12a is at a position (phase) that overlaps the monitor opening 11a, a non-shielding state (opening state) in which the deposition material 400 is allowed to adhere to the crystal unit 13a is set.
The rotation control of the servo motor 15 by the shielding member control unit 212 is performed based on the rotational position (rotational phase) of the shielding member 12 detected by the phase position detection unit 17 including the detection unit 17a and the detected unit 17b. Note that a known position sensor such as a rotary encoder may be used as the position (phase) detecting means.

  The opening slit 12 a is a closed hole in the present embodiment, but may be a notch open at the peripheral end of the shielding member 12. Further, the number of the slits provided may be two or more, and the slit shape is not limited to the sector shape shown in the present embodiment, and various shapes can be adopted. When a plurality of opening slits 12a are provided, the openings may have different shapes.

  The crystal unit 13a is connected to an external resonator 19 via an electrode, a coaxial cable, and the like. A transmission signal generated by applying a voltage between the thin film of the film-forming material 400 deposited on the surface of the crystal unit 13a and the electrode on the back side is represented by a resonance frequency of the crystal unit 13 (a change amount). The information is transmitted from the resonator 19 to the film formation rate acquisition unit 213 and acquired.

Although not shown, the monitor unit 10 is provided with a flow path for flowing cooling water for cooling the heat of the motors 15 and 16 serving as heat sources.
It should be noted that the configuration of the film formation rate monitor device shown here is merely an example, and the present invention is not limited to this. Various known configurations may be appropriately used.

<Features of the present embodiment>
FIG. 4 is a graph illustrating rotation control of the shielding member 12 in the present embodiment. In FIG. 4, 0 indicates that the shielding member 12 is in a state of shielding the crystal unit 13 and 1 indicates that the shielding member 12 is in a state of not shielding the crystal unit 13.
In this embodiment, when performing a base treatment for attaching and covering a predetermined amount of the film forming material 400 to the quartz oscillator 13a in advance until the film forming rate obtained by the film forming rate obtaining unit 213 becomes stable, The speed of the rotation of the member 12 is controlled. Specifically, a second shielding mode (hereinafter, a second mode) for controlling the rotation speed of the shielding member 12 is executed so that the exposure time of the crystal unit 13a is increased in order to quickly form the base. Note that such a base treatment is generally performed without placing the substrate 100 in the vacuum chamber 200. That is, the process is performed before the substrate 100 is housed in the vacuum chamber 200 (a period in which the film formation rate on the substrate 100 is not monitored).

  In addition, when the heating control of the heater 3 is performed using the stable film forming rate after the base treatment, the rotation speed during the steady rotation is controlled at a predetermined set speed, as in the conventional control. It is characterized by. Specifically, in order to extend the life of the crystal unit 13a as much as possible, a first shielding mode (hereinafter, a first mode) that controls the rotation speed of the shielding member 12 so that the exposure time of the crystal unit 13a is shortened. Execute.

  During the base treatment, as the second mode, the steady rotation speed of the shielding member 12 in the non-shielding state where the opening slit 12a overlaps the monitor opening 11a is one of the steady rotation speed in the shielding state where the opening slit 12a does not overlap the monitor opening 11a. / 10. During the period of monitoring the film formation rate after the base treatment, the first mode controls the rotation of the shielding member 13 at a constant steady rotation speed regardless of whether the opening slit 12a and the monitor opening 11a are shielded or unshielded. I do. The steady rotation speed in the shielded state in the second mode is the same as the steady rotation speed in the first mode. Therefore, the steady rotation speed in the unshielded state in the second mode is different from that in the first mode. This is 1/10 of the steady rotation speed in the unshielded state. Thereby, when compared in the same predetermined period, the time length (second length) of the non-shielding state in the second mode is the time length of the non-shielding state in the first mode. (First length).

  FIG. 4 shows the time length TO1 of the period in which the first mode is in the non-shielding state (film-attached state) and the time length TO2 of the period in which the second mode is in the non-shielding state. As shown in FIG. 4, when the steady rotational speed is reduced to 1/10, TO2 is 10 times as long as TO1. When the first mode and the second mode are compared within the time shown in FIG. 4 as the predetermined period, the number of times of the non-shielding state in the first mode is three, whereas The number of times of the shielding state is two times, and the number of times is greater in the first mode. However, the duration of one non-shielding state is longer in the second mode than in the first mode, and the total duration of the non-shielding state within a predetermined period is also longer in the second mode than in the first mode. Longer than

  In the example shown in FIG. 4, the ratio of the time of the non-shielding state per unit time is about 3.3% in the first mode, and about 25% in the second mode. Since the above ratio of about 3.3% in the first mode is a numerical value based on constant-speed rotation control, it is a numerical value that matches the aperture ratio of the shielding member 12 (the area ratio of the opening 12a to the shielding portion 12b). That is, the aperture ratio of the shielding member 12 can be substantially increased by the shift control of the shielding member 12 according to the present embodiment (control in which the steady rotation speed in the non-shielding state is made slower than the steady rotation speed in the shielding state). . Accordingly, the aperture ratio of the shielding member 12 is variably controlled without taking a method such as physically changing the shape of the shielding member 12 (without complicating the device configuration), and the composition for the crystal unit 13 is controlled. The film rate can be arbitrarily controlled. Therefore, the base treatment as preparation for stable film formation rate monitoring can be completed quickly by increasing the amount of the film forming material 400 adhered to the crystal unit 13. When monitoring the film formation rate of the substrate 100, the life of the apparatus can be extended by minimizing the adhesion of the film formation material 400 to the crystal unit 13. That is, it is possible to improve the manufacturing tact while extending the life of the device.

[Example 2]
The method for substantially increasing the aperture ratio of the shielding member 12 without physically changing the shape of the shielding member 12 is not limited to the method described in the first embodiment. In the second embodiment of the present invention, in the rotation control of the shielding member 12 in the second mode, the rotation direction of the shielding member 12 is temporarily changed to the reverse direction and reciprocated, so that the unshielded state is set within a predetermined period. It is characterized by increasing the number of times (increasing the frequency). The configurations of the film formation rate monitoring device and the film formation device according to the second embodiment are the same as those of the first embodiment, and a description thereof will be omitted.

  The reciprocating rotation of the shielding member 12 so that the opening slit 12a moves back and forth in the vicinity of the monitor opening 11a makes it possible to rotate the shielding member 12 in a single direction to form a predetermined non-shielding state. The number of occurrences of the non-shielding state in the period can be increased. Thereby, the total duration of the non-shielding state within the predetermined period can be extended. From the viewpoint of avoiding film formation unevenness, the turning back in the reciprocating rotation is performed after the opening slit 12a has completely passed through the monitor opening 11a (that is, a state where the crystal unit 13a is sufficiently shielded). After).

[Others]
Unlike the first and second embodiments, in the second mode, the control is performed such that the steady-state rotation speed in the shielded state is changed to a speed higher than the steady-state rotation speed in the non-shielded state (the steady-state rotation speed in the first mode). You may make it increase the frequency | count of the non-shielding state in the inside.
Further, the control may be a combination of the first embodiment and the second embodiment. That is, control may be performed such that the stationary rotation speed in the non-shielding state is reduced, and the reciprocating rotation is performed so that the shielding state and the non-shielding state are repeated in a short period of time.
Further, in the present embodiment, the steady rotation speed in the shielding state in the second mode and the steady rotation speed in the first mode are the same speed, but the effect of substantially increasing the aperture ratio of the shielding member 12 is obtained. Different speeds may be set as appropriate within the range.

  DESCRIPTION OF SYMBOLS 1 ... Deposition rate monitor apparatus, 10 ... Monitor unit, 11 ... Crystal monitor head, 11a ... Monitor opening, 12 ... Shielding member (chopper), 12a ... Opening slit (opening, non-shielding part), 12b ... Shielding part, 13 (13a, 13b): crystal oscillator, 14: crystal holder (rotary support), 15: servo motor (drive source), 15a: motor shaft, 16: servo motor (drive source), 16a: motor shaft 16a, 17 (17a, 17b): Position (rotational phase) detecting means, 18 (18a, 18b): Position (rotating phase) detecting means, 19: resonator, 2: film forming apparatus, 100: substrate, 20: control unit ( Acquisition unit, heating control unit), 200: vacuum chamber (film formation chamber), 300: evaporation source device, 301: evaporation source container (crucible), 302: heater (heating means), 303: nozzle

Claims (12)

A film formation rate monitoring device for detecting a film formation rate of a film formation material for a film formation target,
A quartz oscillator for attaching the film-forming material sublimated or vaporized from an evaporation source,
A shielding unit for preventing the film-forming material from adhering to the crystal unit, and an opening for allowing the adhesion, and the shielding unit is provided between the evaporation source and the crystal unit. A shielding member that rotates so as to be able to take a shielding state in which the portion is located, and a non-shielding state in which the opening is located between the evaporation source and the quartz oscillator,
A control unit that controls the rotation of the shielding member,
An acquisition unit configured to acquire a film formation rate based on a change in a resonance frequency of the crystal unit,
With
A first shielding mode in which the control unit rotates the shielding member so that a period in which the non-shielding state is set in the predetermined period is a first length;
A second shielding mode in which the control unit rotates the shielding member such that a period in which the non-shielding state is provided in the predetermined period has a second length longer than the first length;
A film formation rate monitor device comprising:   2. The control unit according to claim 1, wherein in the second shielding mode, the control unit rotates the shielding member such that a rotation speed in the non-shielding state is lower than a rotation speed in the shielding state. 3. Film formation rate monitoring device.   The control unit rotates the shielding member such that a rotation speed in the non-shielding state of the second shielding mode is lower than a rotation speed in the non-shielding state of the first shielding mode. The film deposition rate monitoring device according to claim 1 or 2, wherein   The control unit, so that the frequency of the non-shielding state in the predetermined period in the second shielding mode is higher than the frequency of the non-shielding state in the predetermined period in the first shielding mode, 2. The film forming rate monitor according to claim 1, wherein the shielding member is reciprocated in the second shielding mode.   The film forming rate monitor according to any one of claims 1 to 4, wherein a width of the opening in the rotation direction of the shielding member is smaller than a width of the crystal unit in the rotation direction. .   The film formation rate monitoring apparatus according to claim 1, wherein the first shielding mode is executed when the acquisition unit acquires the film formation rate.   The film formation rate monitoring apparatus according to claim 1, wherein the first shielding mode is performed when forming a film on the film formation target.   The film formation rate monitoring apparatus according to claim 1, wherein the second shielding mode is performed during a period in which film formation on the film formation target is not performed.   2. The second shielding mode is executed in a base treatment in which a predetermined amount of the film forming material is previously attached to the crystal unit before the obtaining unit obtains the film forming rate. 3. 9. The film formation rate monitoring device according to any one of items 1 to 8, above. A chamber for accommodating a film formation target;
An evaporation source container that accommodates a film forming material, which is disposed in the chamber,
A heating control unit that has a heating unit that heats the evaporation source container, and controls a heating temperature of the evaporation source container,
The film formation rate monitoring device according to any one of claims 1 to 9, which is disposed in the chamber,
With
The film forming apparatus, wherein the heating control unit controls the heating temperature based on a film forming rate obtained by the film forming rate monitoring device.   11. The heating control unit according to claim 10, wherein the heating control unit controls the heating temperature based on the film forming rate acquired while the film forming rate monitoring device is executing the first shielding mode. 3. The film forming apparatus according to item 1.   The heating control unit heats the evaporation source container while the film formation target is not stored in the chamber, and the film formation rate monitoring device executes the second shielding mode. Item 11. The film forming apparatus according to item 9 or 10.

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