CN113621932A - Crystal oscillator module, evaporation system and evaporation method thereof - Google Patents
Crystal oscillator module, evaporation system and evaporation method thereof Download PDFInfo
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- CN113621932A CN113621932A CN202110455247.2A CN202110455247A CN113621932A CN 113621932 A CN113621932 A CN 113621932A CN 202110455247 A CN202110455247 A CN 202110455247A CN 113621932 A CN113621932 A CN 113621932A
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- crystal oscillator
- evaporation
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- 239000013078 crystal Substances 0.000 title claims abstract description 130
- 238000001704 evaporation Methods 0.000 title claims abstract description 129
- 230000008020 evaporation Effects 0.000 title claims abstract description 116
- 239000000523 sample Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 49
- 230000008021 deposition Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005259 measurement Methods 0.000 abstract description 10
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 238000004886 process control Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000002596 correlated effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 0 C(C1)C=*2C1=C2 Chemical compound C(C1)C=*2C1=C2 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000003662 hair growth rate Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a crystal oscillator module, an evaporation system and an evaporation method thereof, wherein the crystal oscillator module comprises: the crystal oscillator probe is installed on the moving assembly, the moving assembly moves in a reciprocating mode in the horizontal or vertical direction, and the crystal oscillator probe is driven to be far away from or close to the evaporation source. The beneficial effects are that: for the condition of high material deposition rate, the distance from the crystal oscillator probe to the crucible outlet is increased, so that the material deposited on the crystal oscillator probe is reduced, the service time of the crystal oscillator probe is effectively prolonged, the frequency of replacing the crystal oscillator probe is reduced, the production cost can be reduced, and the production efficiency can be improved; for the condition that the deposition rate of the material is low, the distance from the crystal oscillator probe to the outlet of the crucible is shortened, the material deposited on the crystal oscillator probe is increased, the measurement precision of the crystal oscillator probe is effectively improved, the process control precision and the process stability can be improved, and therefore the product performance and the yield are improved.
Description
Technical Field
The invention relates to the technical field of evaporation deposition, in particular to a crystal oscillator module, an evaporation system and an evaporation method thereof.
Background
An OLED organic light-emitting device is a device which utilizes OLED organic light-emitting materials to prepare a multilayer organic thin film structure to generate electroluminescence. The organic light-emitting material of the OLED can be divided into a micromolecular material device and a high polymer material device, the main difference of the two devices is in the manufacturing process, the micromolecular device mainly adopts a vacuum evaporation process, the high polymer device adopts a rotary coating or spraying printing process, and the existing raw material and device manufacturing process is mature and is the micromolecular OLED material device prepared by the vacuum evaporation process.
In vacuum coating equipment, quartz crystal oscillation monitoring is the most commonly used method for monitoring the film thickness and the material evaporation rate in the process. The quartz crystal oscillation monitoring method mainly utilizes the piezoelectric effect and mass load effect of quartz crystal, after the surface of the crystal oscillation piece is deposited with a film, the vibration of the crystal can be weakened, the vibration or the reduction of frequency is determined by the thickness and the density of the film, and the change of the vibration is tested for many times per second by utilizing very precise electronic equipment, so that the real-time monitoring of the evaporation rate and the thickness of a film layer is realized.
In the preparation process of the OLED organic light-emitting device, the evaporation rates of different device structures and different materials are greatly different, and the range of the evaporation rates can generally span from
To
On the one hand, for the case of a greater evaporation rate, for example >
More materials are deposited on the crystal oscillator plate, and the reduction speed of the vibration frequency of the crystal oscillator plate is high. Generally, in the OLED organic coating process, the crystal oscillator frequency is reduced to about 95% of the initial frequency and needs to be replaced to ensure the accuracy of the measured data. Therefore, the material with a high evaporation rate needs to be frequently replaced, so that the continuous operation time of the equipment is short, and the capacity of the equipment is influenced. On the other hand, in the case where the evaporation rate is relatively small, for example <
The material deposited on the crystal oscillator wafer is less, and may be lower than the optimal measurement range of the crystal oscillator probe, so that the detection result of the crystal oscillator probe is unstable due to the reduction of the detection precision, and the evaporation cannot be accurately monitoredThe hair growth rate and the doping rate are unstable or have significant deviation and the like.
Therefore, the invention provides a crystal oscillator module, an evaporation system and an evaporation method thereof.
Disclosure of Invention
The invention provides a crystal oscillator module, an evaporation system and an evaporation method thereof, and aims to solve the problems that in the prior art, the detection result is unstable due to the reduction of the detection precision of a crystal oscillator probe, the evaporation rate cannot be accurately monitored, the doping rate is unstable or has obvious deviation, and the like.
The technical problem solved by the invention is realized by adopting the following technical scheme:
a crystal oscillator module, comprising: the crystal oscillator probe is installed on the moving assembly, the moving assembly moves in a reciprocating mode in the horizontal or vertical direction, and the crystal oscillator probe is driven to be far away from or close to the evaporation source.
In some embodiments, the moving assembly is driven manually or electrically.
An evaporation system comprising:
an evaporation source;
in the crystal oscillator module, the crystal oscillator module is located at one side of the outlet of the evaporation source and has a certain distance from the evaporation source, and the crystal oscillator probe in the crystal oscillator module can be far away from or close to the evaporation source under the action of the moving assembly of the crystal oscillator probe.
In some embodiments, the traveling direction of the moving assembly is the same as the extension line direction of the connecting line between the evaporation source and the crystal oscillator probe.
In some embodiments, the walking direction of the moving assembly is perpendicular to the direction of a connecting line between the evaporation source and the crystal oscillator probe.
An evaporation method comprises the following steps:
selecting an evaporation material, and determining a deposition rate;
adjusting the distance between the crystal oscillator probe and the evaporation source;
and carrying out an evaporation process until evaporation is finished.
In some embodiments, the method for determining the distance between the crystal oscillator probe and the evaporation source comprises:
and acquiring the optimal distance between the crystal oscillator probe and the evaporation source according to the comparison table of the evaporation materials.
In some embodiments, the crystal-saving oscillator probe is located near the evaporation source when the material deposition rate is small.
In some embodiments, the crystal-saving oscillator probe is located away from the evaporation source when the material deposition rate is large.
The invention has the beneficial effects that: after the evaporation source system is used, for the condition of higher material deposition rate, as the distance from the crystal oscillator probe to the crucible outlet is increased, the material deposited on the crystal oscillator probe is reduced, the service time of the crystal oscillator probe is effectively prolonged, the frequency of replacing the crystal oscillator probe is reduced, the production cost can be reduced, and the production efficiency can be improved; for the condition that the deposition rate of the material is low, the distance from the crystal oscillator probe to the outlet of the crucible is shortened, the material deposited on the crystal oscillator probe is increased, the measurement precision of the crystal oscillator probe is effectively improved, the process control precision and the process stability can be improved, and therefore the product performance and the yield are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: a schematic structural diagram of a crystal oscillator module;
FIG. 2 is a schematic view of an evaporation source system according to embodiment 2 of the present invention;
FIG. 3 is a second schematic view of an evaporation source system according to embodiment 2 of the present invention;
FIG. 4 is a third schematic view of an evaporation source system according to embodiment 2 of the present invention;
FIG. 5 is a schematic view of an evaporation source system according to embodiment 3 of the present invention;
FIG. 6 is a second schematic view of an evaporation source system according to embodiment 3 of the present invention;
fig. 7 is a third schematic view of an evaporation source system according to embodiment 3 of the present invention.
Wherein:
100-crystal oscillator module, 101-substrate, 102-evaporation source, 103-crystal oscillator probe, 105-moving assembly.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to fig. 1, a crystal oscillator module 100 includes: the crystal oscillator probe 103 and the moving assembly 105, the crystal oscillator probe 103 is mounted on the moving assembly 105, and the moving assembly 105 reciprocates in the horizontal or vertical direction and drives the crystal oscillator probe 103 to be far away from or close to the evaporation source 102. The driving mode of the moving assembly 105 is manual or electric. Preferably, the distance control device is driven by an electric mechanism, so that the distance control accuracy can be facilitated. Specifically, for example, when it is desired to approach the evaporation source 102, the crystal oscillator probe 103 is moved to an appropriate position near the evaporation source 102 by the moving assembly 105. When it is desired to move away from the evaporation source 102, the crystal oscillator probe 103 is moved to a suitable position away from the evaporation source 102 by the moving assembly 105.
Example 2
Referring to fig. 2-4, an evaporation system includes: an evaporation source 102 and a crystal oscillator module 100 as in embodiment 1, the evaporation source 102 is located below a substrate 101. The crystal oscillator module 100 is located at one side of the outlet of the evaporation source 102 and at a certain distance from the evaporation source 102, and the crystal oscillator probe 103 in the crystal oscillator module 100 can be far away from or close to the evaporation source 102 under the action of the moving assembly 105 thereof. Wherein, the traveling direction of the moving assembly 105 is the same as the extension line direction of the connecting line between the evaporation source 102 and the crystal oscillator probe 103.
Specifically, the initial distance between the crystal oscillator probe 103 and the outlet of the crucible 102 is a. When depositing the targetMaterial B with a higher rate (deposition rate)
) In order to reduce the wear rate of the crystal oscillator probe 103, the crystal oscillator probe 103 is moved a predetermined distance away from the outlet of the evaporation source 102, the distance between the crystal oscillator probe 103 and the outlet of the evaporation source 102 is b, and b > a. The material B maintains the same evaporation speed, the material deposited on the crystal oscillator probe 103 is reduced, the reduction degree is positively correlated with the distance change value B-a, and the loss speed of the crystal oscillator probe 103 is reduced.
When depositing the material C with a small target rate (deposition rate)
) In order to improve the measurement accuracy of the crystal oscillator probe 103, the crystal oscillator probe 103 is moved a certain distance to a position close to the outlet of the evaporation source 102, the distance between the crystal oscillator probe 103 and the outlet of the evaporation source 102 is c, and c < a. The material C maintains the same evaporation speed, the material deposited on the crystal oscillator probe 103 is increased, the increase degree is positively correlated with the distance change value a-C, and the accuracy and the stability of the measurement result of the crystal oscillator probe 103 are improved.
With respect to the initial position of the crystal oscillator probe 103, the toiling value of the evaporation system is calibrated using conventional means of the evaporation process, after which the evaporation source 102 system can be used as normal as a conventional evaporation source 102. In the subsequent evaporation process, the position of the crystal oscillator probe 103 cannot be changed at will, and if any adjustment needs to be made on the position of the crystal oscillator probe 103, the film thickness test sample needs to be manufactured again, and the tolling value of the evaporation system needs to be calibrated again.
After the evaporation source 102 system is used, for the condition of higher material deposition rate, as the distance from the crystal oscillator probe 103 to the crucible outlet is increased, the material deposited on the crystal oscillator probe 103 is reduced, the service time of the crystal oscillator probe 103 is effectively prolonged, the frequency of replacing the crystal oscillator probe 103 is reduced, the production cost can be reduced, and the production efficiency can be improved; for the condition that the deposition rate of the material is low, the distance from the crystal oscillator probe 103 to the crucible outlet is reduced, so that the material deposited on the crystal oscillator probe 103 is increased, the measurement precision of the crystal oscillator probe 103 is effectively improved, the process control precision and the process stability can be improved, and the product performance and the yield are improved.
Example 3
Referring to fig. 5-7, an evaporation system includes: an evaporation source 102 and a crystal oscillator module 100 as in embodiment 1, the evaporation source 102 is located below a substrate 101. The crystal oscillator module 100 is located at one side of the outlet of the evaporation source 102 and at a certain distance from the evaporation source 102, and the crystal oscillator probe 103 in the crystal oscillator module 100 can be far away from or close to the evaporation source 102 under the action of the moving assembly 105 thereof. Wherein, the traveling direction of the moving assembly 105 is perpendicular to the connecting line direction between the evaporation source 102 and the crystal oscillator probe 103.
Specifically, the initial distance between the crystal oscillator probe 103 and the outlet of the crucible 102 is a. When depositing the material D having a large target rate (deposition rate)
) In order to reduce the wear rate of the crystal oscillator probe 103, the crystal oscillator probe 103 is moved a predetermined distance away from the outlet of the evaporation source 102, the distance between the crystal oscillator probe 103 and the outlet of the evaporation source 102 is d, and d > a. The material D maintains the same evaporation speed, the material deposited on the crystal oscillator probe 103 is reduced, the reduction degree is positively correlated with the distance change value D-a, and the loss speed of the crystal oscillator probe 103 is reduced.
When depositing the material E with a small target rate (deposition rate)
) In order to improve the measurement accuracy of the crystal oscillator probe 103, the crystal oscillator probe 103 is moved to a position close to the outlet of the evaporation source 102 by a certain distance, the distance between the crystal oscillator probe 103 and the outlet of the evaporation source 102 is e, and e is less than a. The material E maintains the same evaporation speed, the material deposited on the crystal oscillator probe 103 is increased, the increase degree is positively correlated with the distance change value a-E, and the accuracy and the stability of the measurement result of the crystal oscillator probe 103 are improved.
With respect to the initial position of the crystal oscillator probe 103, the toiling value of the evaporation system is calibrated using conventional means of the evaporation process, after which the evaporation source 102 system can be used as normal as a conventional evaporation source 102. In the subsequent evaporation process, the position of the crystal oscillator probe 103 cannot be changed at will, and if any adjustment needs to be made on the position of the crystal oscillator probe 103, the film thickness test sample needs to be manufactured again, and the tolling value of the evaporation system needs to be calibrated again.
After the evaporation source 102 system is used, for the condition of higher material deposition rate, as the distance from the crystal oscillator probe 103 to the crucible outlet is increased, the material deposited on the crystal oscillator probe 103 is reduced, the service time of the crystal oscillator probe 103 is effectively prolonged, the frequency of replacing the crystal oscillator probe 103 is reduced, the production cost can be reduced, and the production efficiency can be improved; for the condition that the deposition rate of the material is low, the distance from the crystal oscillator probe 103 to the crucible outlet is reduced, so that the material deposited on the crystal oscillator probe 103 is increased, the measurement precision of the crystal oscillator probe 103 is effectively improved, the process control precision and the process stability can be improved, and the product performance and the yield are improved.
Example 4
The invention also provides an evaporation method, which comprises the following steps:
selecting an evaporation material, and determining a deposition rate;
adjusting the distance between the crystal oscillator probe and the evaporation source;
and carrying out an evaporation process until evaporation is finished.
The method for determining the distance between the crystal oscillator probe and the evaporation source comprises the following steps:
and acquiring the optimal distance between the crystal oscillator probe and the evaporation source according to the comparison table of the evaporation materials.
When the material deposition rate is low, the crystal-saving oscillator probe is positioned at a position close to the evaporation source, so that the accuracy and the stability of the measurement result of the crystal oscillator probe can be effectively improved. When the material deposition rate is high, the crystal-saving oscillator probe is positioned at a position far away from the evaporation source, the material deposited on the crystal oscillator probe is reduced, the service time of the crystal oscillator probe is effectively prolonged, the frequency of replacing the crystal oscillator probe is reduced, the production cost can be reduced, and the production efficiency can be improved.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A crystal oscillator module, comprising: the crystal oscillator probe is installed on the moving assembly, the moving assembly moves in a reciprocating mode in the horizontal or vertical direction, and the crystal oscillator probe is driven to be far away from or close to the evaporation source.
2. The crystal oscillator module of claim 1, wherein the moving component is driven manually or electrically.
3. An evaporation system, comprising:
an evaporation source;
the crystal oscillator module according to any one of claims 1 to 2, wherein the crystal oscillator module is located at one side of an outlet of the evaporation source and at a distance from the evaporation source, and the crystal oscillator probe in the crystal oscillator module can be moved away from or close to the evaporation source by the moving assembly of the crystal oscillator probe.
4. An evaporation system according to claim 3, wherein the traveling direction of the moving member is the same as the direction of the extension line of the connection line between the evaporation source and the crystal oscillator probe.
5. An evaporation system according to claim 3, wherein the traveling direction of the moving assembly is perpendicular to the direction of the line connecting the evaporation source and the crystal oscillator probe.
6. An evaporation method is characterized by comprising the following steps:
selecting an evaporation material, and determining a deposition rate;
adjusting the distance between the crystal oscillator probe and the evaporation source;
and carrying out an evaporation process until evaporation is finished.
7. An evaporation method according to claim 6, wherein the method for determining the distance between the crystal oscillator probe and the evaporation source comprises:
and acquiring the optimal distance between the crystal oscillator probe and the evaporation source according to the comparison table of the evaporation materials.
8. An evaporation method according to claim 6, wherein when the deposition rate of the evaporation material is small, the crystal-saving oscillator probe is located close to the evaporation source.
9. An evaporation method according to claim 6, wherein when the deposition rate of the evaporation material is high, the crystal-saving oscillator probe is located at a position far from the evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110455247.2A CN113621932A (en) | 2021-04-26 | 2021-04-26 | Crystal oscillator module, evaporation system and evaporation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110455247.2A CN113621932A (en) | 2021-04-26 | 2021-04-26 | Crystal oscillator module, evaporation system and evaporation method thereof |
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| CN113621932A true CN113621932A (en) | 2021-11-09 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140186974A1 (en) * | 2011-04-20 | 2014-07-03 | Koninklijke Philips N.V. | Measurement device and method for vapour deposition applications |
| CN107385406A (en) * | 2017-05-22 | 2017-11-24 | 茆胜 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
| JP2020023737A (en) * | 2018-08-08 | 2020-02-13 | キヤノントッキ株式会社 | Monitoring device for film deposition rate and film deposition apparatus |
| CN112458407A (en) * | 2020-11-27 | 2021-03-09 | 江苏集萃有机光电技术研究所有限公司 | Crystal oscillator measuring system, measuring method and device |
-
2021
- 2021-04-26 CN CN202110455247.2A patent/CN113621932A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140186974A1 (en) * | 2011-04-20 | 2014-07-03 | Koninklijke Philips N.V. | Measurement device and method for vapour deposition applications |
| CN107385406A (en) * | 2017-05-22 | 2017-11-24 | 茆胜 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
| JP2020023737A (en) * | 2018-08-08 | 2020-02-13 | キヤノントッキ株式会社 | Monitoring device for film deposition rate and film deposition apparatus |
| CN112458407A (en) * | 2020-11-27 | 2021-03-09 | 江苏集萃有机光电技术研究所有限公司 | Crystal oscillator measuring system, measuring method and device |
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Application publication date: 20211109 |