CN111206216B - Mosaic target material experiment design method capable of controlling film components - Google Patents

Mosaic target material experiment design method capable of controlling film components Download PDF

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CN111206216B
CN111206216B CN202010123673.1A CN202010123673A CN111206216B CN 111206216 B CN111206216 B CN 111206216B CN 202010123673 A CN202010123673 A CN 202010123673A CN 111206216 B CN111206216 B CN 111206216B
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CN111206216A (en
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杨成韬
孙贤
谢易微
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University of Electronic Science and Technology of China
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/20—Measuring arrangements characterised by the use of mechanical techniques for measuring contours or curvatures

Abstract

The invention provides an experimental design method of an embedded target material capable of controlling film components, which is characterized in that magnetic field distribution of different positions on the surface of the target material is obtained according to magnetic field simulation so as to arrange the positions of embedded holes on the target material, thereby preparing a uniform c-axis oriented AlN film and theoretically calculating the content of a doped film; comprises the following steps: (1) calculating the magnetic field distribution of different positions on the surface of the target according to the magnetic field simulation; (2) measuring an etching runway formed by a part of the surface of the target material dented due to magnetron sputtering by using the waste target material, and recording a variation curve of the height of the dent position along the radial direction; (3) and comparing the magnetic field distribution diagram with the target surface etching track, arranging the positions of the embedding holes, and obtaining the theoretical content of Sc atoms, Er atoms and Al atoms in the film. The invention can realize the doping of various elements by using the mosaic target, can accurately control and calculate the components of the deposited film, can realize the regulation and control of the doping concentration compared with the traditional alloy target, and can prepare the film with high uniformity and consistency.

Description

Mosaic target material experiment design method capable of controlling film components
Technical Field
The invention belongs to the field of magnetron sputtering processes, and particularly relates to a design method of a mosaic target.
Background
With the rapid development of radio communication technology, the filter tends to be integrated and high-frequency, the AlN piezoelectric film material has a longitudinal wave sound velocity of about 10400m/s and a transverse wave sound velocity of about 5500m/s, and can be used for preparing an acoustic wave device with the center frequency of 5Ghz, and meanwhile, the AlN film has a series of excellent physicochemical characteristics: the mechanical strength is high, the hardness is large, the chemical stability and the thermal stability are good (the normal work can be carried out at 1200 ℃), and the environmental tolerance is good; moreover, AlN can be compatible with COMS technology, can realize integration, miniaturization, AlN is environment-friendly, there is not lead pollution problem when PZT is made the piezoelectric film; AlN also has high electrical breakdown strength and low dielectric loss (10)-4) And high thermal conductivity. These excellent characteristics have made AlN piezoelectric films successfully attract the attention of researchers. But AlN compares to PZTAnd the ZnO piezoelectric constant and the electromechanical coupling coefficient are small, so that the application of the ZnO piezoelectric constant and the electromechanical coupling coefficient in the electronic field is greatly limited. Therefore, researchers modify AlN films by doping with rare earth elements or the like in order to obtain a larger piezoelectric response and a higher electromechanical coupling coefficient. The preparation method and process parameters of the thin film have great influence on the preferred orientation growth, the crystallization quality and the surface roughness of the AlN thin film, so that the search for a proper thin film deposition process and related parameters is very important.
Currently, AlN thin films are mainly prepared by magnetron sputtering methods. Magnetron sputtering is widely used in the fields of aerospace, microelectronics, solar energy, biology and machining. Compared with a chemical deposition method and a sol-gel method, the magnetron sputtering method has a series of advantages. The film obtained by sputtering has high purity, good compactness and good film forming uniformity; the sputtering process has good repeatability, and a film with uniform thickness can be obtained on a large-area substrate; the thickness of the coating can be accurately controlled, and the particle size of the formed film can be controlled by changing parameter conditions; different metals, alloys and oxides can be mixed and simultaneously sputtered on the base material; easy to realize industrialization, etc. In the research of various single-doped or multi-doped systems, the concentration or content ratio of doping elements needs to be flexibly controlled, however, the cost of the alloy target material is high, and the advantages of the mosaic target are highlighted. Since the magnetic field distribution on the target is not uniform, which directly results in different sputtering efficiencies at different positions on the target surface, and this also directly causes the problems of non-uniform film distribution along the c-axis orientation, poor quality, high surface roughness and the like, the arrangement mode of the damascene holes is very important. The positions of the mosaic holes on the pure Al target are regularly arranged to improve the uniformity of the growth orientation of the film and reduce the error between the content of the theoretically-calculated deposited film and an actual measured value.
The target surface generates a specific etching runway due to the different sputtering efficiencies of different positions on the target surfaceThe sputtering yield is defined as Ar per target surface+Kinetic energy and number of incident ions. According to the research on target improvement and magnetic field simulation analysis of CPA type magnetron sputtering equipment on the basis of the ice snow, when Ar is+The incident energy is constant, and the sputtering yield of the metal is basically unchanged, and the intensity of the magnetic field is in direct proportion to the sputtering efficiency. Therefore, the magnetic field intensity distribution of the surface of the target can be obtained through magnetic field simulation, and the sputtering efficiency of different positions of the surface of the target can be further obtained. And reasonably arranging the positions of the embedding holes according to the magnetic field intensity distribution, placing metal ingots Sc and Er so as to obtain the maximum sputtering efficiency of metal ingot atoms and the consistency of film growth, and theoretically calculating the content of the doped film.
In conclusion, the invention optimizes the film growth, improves the uniformity and consistency of the film growth and flexibly controls and calculates the doping content by designing the mosaic target through magnetic field simulation based on the requirement of low cost.
Disclosure of Invention
In view of the requirements that components are difficult to control and the calculation error of the content of the film needs to be reduced to the maximum extent when a multi-element doped film is deposited by magnetron sputtering, the invention provides a mosaic target experimental design method capable of controlling the components of the film aiming at the problems of the existing magnetron sputtering alloy target material, and verified that the Er prepared by the method0.07Sc0.04Al0.89The N film has good c-axis orientation and small surface roughness, can meet the preparation requirement of a device, and has small errors of theoretical calculation values and experimental values of the doping content of the film.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a mosaic target material experiment design method capable of controlling film components is characterized in that magnetic field distribution of different positions on the surface of a target material is obtained according to magnetic field simulation, positions of mosaic holes on the target material are arranged according to the magnetic field distribution, so that a uniform c-axis oriented AlN film is prepared, and the content of a doped film is theoretically calculated;
the design method comprises the following steps:
(1) calculating the magnetic field distribution of different positions on the surface of the target according to the magnetic field simulation;
(2) measuring an etching runway formed by a part of the surface of the target material dented due to magnetron sputtering by using the waste target material, and recording a variation curve of the height of the dent position along the radial direction;
(3) and comparing the magnetic field distribution diagram with the target surface etching track, arranging the positions of the embedding holes, and obtaining the theoretical content of Sc atoms, Er atoms and Al atoms in the film.
The waste target material is used because the waste target material has obvious etched tracks through magnetron sputtering.
Preferably, the step (1) further comprises the steps of:
(1.1): drawing a simple model diagram of the magnetron sputtering vacuum chamber and the internal magnetic steel;
(1.2): and (3) importing the model file obtained in the step (1) into COMSOL software, setting materials, boundary conditions, a physical field and grid division, and finally calculating the magnetic field distribution on the target to obtain magnetic field distribution maps of different positions on the surface of the target.
Preferably, the step (2) further comprises the steps of:
(2.1): the method comprises the steps of building a simple device by utilizing a waste target 3, a universal meter 6, a vernier caliper 4, a steel ruler 2, a support 7, a probe 5 and a white paperboard 1, placing the waste target 3 on the white paperboard 1, vertically placing the vernier caliper 4 on the surface of the waste target 3, fixing the probe 5 at the bottom of the vernier caliper 4, fixing the upper end of the vernier caliper 4 by using the support 7, keeping the vernier caliper fixed, placing the steel ruler 2 in the diameter direction of the surface of the target, connecting the steel ruler 2 with a red binding post of the universal meter 6, connecting the head of the probe 5 with a black binding post of the universal meter 6, and measuring the etching runway on the surface of the target by using the device; when a probe fixed at the bottom of the vernier caliper is in contact with the surface of the target, the circuit is conducted, the multimeter continuously sends out buzzes or resistance readings, the contact between the vernier caliper and the target is good, and the current value of the vernier caliper is recorded;
(2.2): the vernier caliper is set to be zero at the edge of the target material, and the position of measurement is moved by moving the white paper for placing the target material and the scale of the rigid ruler left and right;
(2.3): and sequentially measuring along the diameter direction of the target to finally obtain a one-dimensional etching profile map of the radial distribution of the surface of the target.
Preferably, the step (3) further comprises the steps of:
(3.1): comparing the etched track on the surface of the target with a magnetic field distribution diagram obtained by simulation, wherein the place with the strongest magnetic field is the deepest place of the etched track, the etched track is in a circular ring shape, and embedding holes are regularly arranged at the etched track;
(3.2): setting a single-ring embedding hole or a multi-ring embedding hole by taking the etching track as the circle center and the radius of the metal ingot as the radius;
(3.3): utilizing matlab simulation to calculate an atom sputtering yield distribution diagram of Al, Sc and Er under the bombardment of incident ions with certain energy;
(3.4): and calculating the theoretical contents of Sc atoms, Er atoms by combining the number of the placed Sc ingots and Er ingots, the sputtering yield of the Al atoms, Sc atoms and Er atoms and the radial area integral of the sputtering efficiency on the surface of the target.
Preferably, the content ratio of Sc, Er and Al in the deposited film during single-ring mosaic is as follows:
AtSc:AtEr:AtAl＝nScYScScIV:nErYErErIV:YAl(AlI+II+III-nScScIV-nErErIV)
wherein n isEr，nScNumber of Er ingot and Sc ingot on single ring mosaic hole, YSc、YErRespectively the sputtering yield of Er and Sc atoms under the bombardment of incident ions with certain energy, ScIV、ErIVThe integral of the sputtering efficiency function on Sc ingots and Er ingots, AlI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
Preferably, when the film is subjected to multi-ring mosaic, the content ratio of Sc, Er and Al in the deposited film is as follows:
AtEr:AtSc:AtAl＝YEr(nEr1S1+nEr2S2+nEr3S3):Ysc(nSc1S1+nSc2S2+nSc3S3): YAl[AlⅠ+Ⅱ+Ⅲ-(nEr1+nSc1)S1-(nEr2+nSc2)S2-(nEr3+nSc3)S3))]
wherein, YSc、YEr、YAlRespectively the sputtering yield of Er, Sc and Al atoms under the bombardment of incident ions with certain energy, nEr1、 nEr2、nEr3Respectively the number of the Er metal ingots inlaid in the 1 st, 2 nd and 3 rd rings, nsc1、nsc2、nsc3Respectively the number of the embedded metal ingots of Sc on the 1 st, 2 nd and 3 rd rings, S1, S2 and S3 are the area integrals of the sputtering efficiency functions f (x) of the 1 st, 2 nd and 3 rd rings, and AlI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
Compared with the existing doped film deposition method, the invention has the following beneficial effects:
the invention can realize doping of various elements by using the mosaic target, can accurately control and calculate the components of the deposited film, and prepare the high-quality film with consistent growth orientation. The invention has low cost, flexibly realizes the doping of various elements, accurately controls and calculates the components of the film and prepares the film with high uniformity and consistency.
Drawings
FIG. 1 is a three-dimensional model of the surface magnetic field strength of the target according to the present invention.
FIG. 2 is a magnetic field distribution diagram of a three-dimensional sectional line at the center of the target surface according to the present invention.
FIG. 3 is a diagram of a surface profile measuring apparatus according to the present invention.
FIG. 4 is a surface etching profile of an Al target according to the present invention.
FIG. 5 is a graph of the sputtering yield of Sc, Al and Er of the present invention under the condition of 45 degree incidence of argon ions with different energies.
FIG. 6 is a schematic view of an exemplary arrangement of single ring damascene holes in the present invention.
FIG. 7 is a diagram showing the arrangement of multi-ring mosaic holes in the mosaic target of the present invention.
FIG. 8 shows Er prepared by the experimental method of the present invention0.07Sc0.04Al0.89NzXRD pattern of the film.
FIG. 9 shows Er prepared by the experimental method of the present invention0.07Sc0.04Al0.89NzAFM images of the films.
Wherein, 1 is the white cardboard, 2 is the steel ruler, 3 is old and useless target, 4 is slide caliper, 5 is the probe, 6 is the universal meter, 7 is the support.
Detailed Description
Example 1
A mosaic target material experiment design method capable of controlling film components is characterized in that magnetic field distribution of different positions on the surface of a target material is obtained according to magnetic field simulation, positions of mosaic holes on the target material are arranged according to the magnetic field distribution, so that a uniform c-axis oriented AlN film is prepared, and the content of a doped film is theoretically calculated;
the design method comprises the following steps:
(1) calculating the magnetic field distribution of different positions on the surface of the target according to the magnetic field simulation;
(2) measuring an etching runway formed by a part of the surface of the target material dented due to magnetron sputtering by using the waste target material, and recording a variation curve of the height of the dent position along the radial direction;
(3) and comparing the magnetic field distribution diagram with the target surface etching track, arranging the positions of the embedding holes, and obtaining the theoretical content of Sc atoms, Er atoms and Al atoms in the film.
Example 2
A mosaic target material experiment design method capable of controlling film components comprises the following steps:
(1) calculating the magnetic field distribution of different positions on the surface of the target according to the magnetic field simulation;
(1.1): drawing a simple model diagram of the magnetron sputtering vacuum chamber and the internal magnetic steel;
(1.2): and (3) importing the model file obtained in the step (1) into COMSOL software, setting materials, boundary conditions, a physical field and grid division, and finally calculating the magnetic field distribution on the target to obtain magnetic field distribution maps of different positions on the surface of the target.
(2) Measuring an etching runway formed by a part of the surface of the target material dented due to magnetron sputtering by using the waste target material, and recording a variation curve of the height of the dent position along the radial direction;
(2.1): the method comprises the steps of building a simple device by utilizing a waste target 3, a universal meter 6, a vernier caliper 4, a steel ruler 2, a support 7, a probe 5 and a white paperboard 1, placing the waste target 3 on the white paperboard 1, vertically placing the vernier caliper 4 on the surface of the waste target 3, fixing the probe 5 at the bottom of the vernier caliper 4, fixing the upper end of the vernier caliper 4 by using the support 7, keeping the vernier caliper fixed, placing the steel ruler 2 in the diameter direction of the surface of the target, connecting the steel ruler 2 with a red binding post of the universal meter 6, connecting the head of the probe 5 with a black binding post of the universal meter 6, and measuring the etching runway on the surface of the target by using the device; when a probe fixed at the bottom of the vernier caliper is in contact with the surface of the target, the circuit is conducted, the multimeter continuously sends out buzzes or resistance readings, the contact between the vernier caliper and the target is good, and the current value of the vernier caliper is recorded;
(2.2): the vernier caliper is set to be zero at the edge of the target material, and the position of measurement is moved by moving the white paper for placing the target material and the scale of the rigid ruler left and right;
(2.3): and sequentially measuring along the diameter direction of the target to finally obtain a one-dimensional etching profile map of the radial distribution of the surface of the target.
(3) And comparing the magnetic field distribution diagram with the target surface etching track, arranging the positions of the embedding holes, and obtaining the theoretical content of Sc atoms, Er atoms and Al atoms in the film.
(3.1): comparing the etched track on the surface of the target with a magnetic field distribution diagram obtained by simulation, wherein the place with the strongest magnetic field is the deepest place of the etched track, the etched track is in a circular ring shape, and embedding holes are regularly arranged at the etched track;
(3.2): setting a single-ring embedding hole or a multi-ring embedding hole by taking the etching track as the circle center and the radius of the metal ingot as the radius;
(3.3): utilizing matlab simulation to calculate an atom sputtering yield distribution diagram of Al, Sc and Er under the bombardment of incident ions with certain energy;
(3.4): and calculating the theoretical contents of Sc atoms, Er atoms by combining the number of the placed Sc ingots and Er ingots, the sputtering yield of the Al atoms, Sc atoms and Er atoms and the radial area integral of the sputtering efficiency on the surface of the target.
Example 3
The difference between this embodiment and embodiment 2 is that in step (3.2), a ring of damascene holes is arranged along the circumference of the center line with the center line of the deepest position of the etching track as the center of the circle and the radius of the metal ingot as the radius, the Sc ingot is placed, and the composition of the deposited film is calculated by combining the sputtering yield map.
FIG. 6 shows the center O of the target0The two external tangents of the single-ring mosaic hole are led out to form a fan-shaped schematic diagram. f (ρ) is a function of sputtering yield versus pole diameter ρ, describing the distribution of sputtering yield in the radial direction. It is known that sputtering efficiency is proportional to magnetic field strength. Region IV is the position of the embedding hole and the circle center is O1And the areas I, II and III are areas left after the sector area is subtracted from the area IV, and the area integral of the sputtering efficiency function on the Sc ingot can be obtained according to the polar coordinate transformation:
Figure 1
where ρ is1、ρ2Are respectively a distance O1By one ingot radius, and a distance O1Plus a distance of radius of the ingot, theta0Is the angle of the sector.
The integral of the sputtering yield over the entire area of i, ii, iii on the Al target can be expressed as:
Figure 2
the ratio of Sc atoms to Al atoms in the ScAlN film sputtered during single-ring damascene can be expressed as:
Figure BDA0002393768520000062
wherein, Ysc、YAlRespectively the sputtering yield of Sc and Al under the ion bombardment of certain energy incidence, n is the mosaic quantity of Sc ingots on the Al target, ScIVAl being the area integral of the sputtering yield on the Sc ingotI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
Example 4
The difference between this embodiment and embodiment 3 is that in step (3.2), a ring of damascene holes are arranged along the circumference of the center line with the center line of the deepest position of the etching track as the center of a circle and the radius of the metal ingot as the radius, and the Sc ingot and the Er ingot are placed, and the composition of the deposited film is calculated by combining the sputtering yield map.
All circles are located on the same circumference, and in an ideal case, the ratio of Sc atoms, Er atoms and Al atoms in the ScErAlN thin film generated by sputtering with the single-ring damascene target can be expressed as:
AtSc:AtEr:AtAl＝nScYScScIV:nErYErErIV:YAl(AlI+II+III-nScScIV-nErErIV)
wherein n isEr，nScNumber of Er ingot and Sc ingot on single ring mosaic hole, YSc、YErRespectively the sputtering yield of Er and Sc atoms under the bombardment of incident ions with certain energy, ScIV、ErIVThe integral of the sputtering efficiency function on Sc ingots and Er ingots, AlI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
Example 5
The difference between this embodiment and embodiment 4 is that, in step (3.2), the central line of each annular etching track is used as the center of a circle, the radius of the metal ingot is used as the radius, multiple ring damascene holes are arranged along the circumference of each central line, and when Sc ingots and Er ingots are placed, the content ratio of Sc, Er and Al in the deposited film is as follows:
AtEr:AtSc:AtAl＝YEr(nEr1S1+nEr2S2+nEr3S3):Ysc(nSc1S1+nSc2S2+nSc3S3): YAl[AlⅠ+Ⅱ+Ⅲ-(nEr1+nSc1)S1-(nEr2+nSc2)S2-(nEr3+nSc3)S3))]
wherein, YSc、YEr、YAlRespectively the sputtering yield of Er, Sc and Al atoms under the bombardment of incident ions with certain energy, nEr1、 nEr2、nEr3Respectively the number of the Er metal ingots inlaid in the 1 st, 2 nd and 3 rd rings, nsc1、nsc2、nsc3Respectively the number of the embedded metal ingots of Sc on the 1 st, 2 nd and 3 rd rings, S1, S2 and S3 are the area integrals of the sputtering efficiency functions f (x) of the 1 st, 2 nd and 3 rd rings, and AlI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
Experiments prove that the Er and Sc modified doped AlN thin film prepared by the mosaic target has good c-axis orientation, which indicates that the mosaic target designed by the invention can be used for preparing an aluminum nitride piezoelectric thin film which is actually used in industrial preparation like an alloy target.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (1)

1. A mosaic target material experiment design method capable of controlling film components is characterized in that: obtaining magnetic field distribution of different positions on the surface of the target according to magnetic field simulation, arranging the positions of the embedding holes on the target so as to prepare a uniform c-axis oriented AlN film, and theoretically calculating the content of the doped film;
the design method comprises the following steps:
(1) calculating the magnetic field distribution of different positions on the surface of the target according to the magnetic field simulation;
(1.1): drawing a simple model diagram of the magnetron sputtering vacuum chamber and the internal magnetic steel;
(1.2): importing the model file obtained in the step 1 into COMSOL software, setting materials, boundary conditions, a physical field and grid division, and finally calculating the magnetic field distribution on the target to obtain magnetic field distribution maps of different positions on the surface of the target;
(2) measuring an etching runway formed by a part of the surface of the target material dented due to magnetron sputtering by using the waste target material, and recording a variation curve of the height of the dent position along the radial direction;
(2.1): the method comprises the following steps of (1) utilizing a waste target (3), using a universal meter (6), a vernier caliper (4), a steel ruler (2), a support (7), a probe (5) and a white board (1) to build a simple device, placing the waste target (3) on the white board (1), vertically placing the vernier caliper (4) on the surface of the waste target (3), fixing the probe (5) at the bottom of the vernier caliper (4), fixing the upper end of the vernier caliper (4) by using the support (7), keeping the vernier caliper fixed, placing the steel ruler (2) in the diameter direction of the surface of the target, connecting the steel ruler (2) with a red binding post of the universal meter (6), connecting the head of the probe (5) with a black binding post of the universal meter (6), and measuring a target surface etching runway by using the device; when a probe fixed at the bottom of the vernier caliper is in contact with the surface of the target, the circuit is conducted, the multimeter continuously sends out buzzes or resistance readings, the contact between the vernier caliper and the target is good, and the current value of the vernier caliper is recorded;
(2.2): the vernier caliper is set to be zero at the edge of the target material, and the position of measurement is moved by moving the white paper for placing the target material and the scale of the rigid ruler left and right;
(2.3): sequentially measuring along the diameter direction of the target material to finally obtain a one-dimensional etching profile map of the radial distribution of the surface of the target material;
(3) comparing the magnetic field distribution diagram with the target surface etching track, arranging the positions of the embedding holes, and obtaining the theoretical content of Sc atoms, Er atoms and Al atoms in the film;
(3.1): comparing the etched track on the surface of the target with a magnetic field distribution diagram obtained by simulation, wherein the place with the strongest magnetic field is the deepest place of the etched track, the etched track is in a circular ring shape, and embedding holes are regularly arranged at the etched track;
(3.2): setting a single-ring embedding hole or a multi-ring embedding hole by taking the etching track as the circle center and the radius of the metal ingot as the radius;
(3.3): utilizing matlab simulation to calculate an atom sputtering yield distribution diagram of Al, Sc and Er under the bombardment of incident ions with certain energy;
(3.4): calculating the theoretical content of Sc atoms, Er atoms by combining the number of the placed Sc ingots and Er ingots, the sputtering yield of Al atoms, Sc atoms and Er atoms and the radial area integral of the sputtering efficiency on the surface of the target;
the content ratio of Sc, Er and Al in the deposited film during single-ring embedding is as follows:
AtSc:AtEr:AtAl＝nScYScScIV:nErYErErIV:YAl(AlI+II+III-nScScIV-nErErIV)
wherein n isEr，nScNumber of Er ingot and Sc ingot on single ring mosaic hole, YSc、YErRespectively the sputtering yield of Er and Sc atoms under the bombardment of incident ions with certain energy, ScIV、ErIVThe integral of the sputtering efficiency function on Sc ingots and Er ingots, AlI+II+IIIThe integral of the sputtering efficiency on the whole area of I, II and III on the Al target material is shown;
when the multiple rings are embedded, the content ratio of Sc, Er and Al in the deposited film is as follows:
AtEr:AtSc:AtAl＝YEr(nEr1S1+nEr2S2+nEr3S3):Ysc(nSc1S1+nSc2S2+nSc3S3):
YAl[AlⅠ+Ⅱ+Ⅲ-(nEr1+nSc1)S1-(nEr2+nSc2)S2-(nEr3+nSc3)S3))]
wherein，YSc、YEr、YAlRespectively the sputtering yield of Er, Sc and Al atoms under the bombardment of incident ions with certain energy, nEr1、nEr2、nEr3Respectively the number of the Er metal ingots inlaid in the 1 st, 2 nd and 3 rd rings, nsc1、nsc2、nsc3Respectively the number of the embedded metal ingots of Sc on the 1 st, 2 nd and 3 rd rings, S1, S2 and S3 are the area integrals of the sputtering efficiency functions f (x) of the 1 st, 2 nd and 3 rd rings, and AlI+II+IIIThe integral of the sputtering efficiency over the entire area of I, II, III on the Al target is shown.
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