CN107229901A - Ultrasonic fingerprint recognizer component and preparation method, electronic installation - Google Patents
Ultrasonic fingerprint recognizer component and preparation method, electronic installation Download PDFInfo
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- CN107229901A CN107229901A CN201710220114.0A CN201710220114A CN107229901A CN 107229901 A CN107229901 A CN 107229901A CN 201710220114 A CN201710220114 A CN 201710220114A CN 107229901 A CN107229901 A CN 107229901A
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/308—Membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The present invention relates to fingerprint identification technology field, and in particular to ultrasonic fingerprint recognizer component and preparation method, electronic installation.The preparation method of the ultrasonic fingerprint recognizer component, which is included on substrate, forms macromolecule membrane, and macromolecule membrane crystallization and polarization in situ are formed into polarized film, in polarized film away from forming electrode pattern layer by metal mask plate in substrate side.The present invention is also provided the ultrasonic fingerprint recognizer component prepared using the above method and includes the electronic installation of the ultrasonic fingerprint recognizer component.Polarized film is formed by forming macromolecule membrane on substrate, and by macromolecule membrane crystallization and polarization in situ, electrode pattern layer is formed on polarized film, high with sensitivity, accuracy is strong, and preparation method is simple, and cost is low, is adapted to mass large-scale production.
Description
【Technical field】
The present invention relates to fingerprint identification technology field, more particularly to ultrasonic fingerprint recognizer component and preparation method, electronics
Device.
【Background technology】
At present, fingerprint recognition component is broadly divided into pressure type, condenser type, optical profile type and sound wave type.Wherein, pressure type, electricity
Appearance formula and sound wave type fingerprint recognition component are widely used in electronic product because of its excellent performance, especially sound wave type fingerprint
Recognition means have precision height, not by greasy dirt, moisture interference, it is possible to the features such as penetrating corium, glass, metal and plastics,
More liked by industry.However, sound wave type fingerprint recognition component lines pattern is often prepared using silver paste.Need to make on polarized film
Reserve line pattern, Reperfu- sion silver paste, complex process, cost is higher, is unfavorable for electronic product production in enormous quantities.
【The content of the invention】
The problem of to overcome existing process complexity, a kind of ultrasonic fingerprint recognizer component of present invention offer and preparation method,
Electronic installation.
The technical scheme that the present invention solves technical problem is to provide a kind of preparation method of ultrasonic fingerprint recognizer component, its
It is included on substrate and forms macromolecule membrane, and macromolecule membrane crystallization and polarization in situ is formed into polarized film, it is remote in polarized film
From forming electrode pattern layer by metal mask plate in substrate side.
Preferably, it is described polarized film away from substrate side by metal mask plate formation electrode pattern layer be：Control
Technological temperature is less than or equal to 100 DEG C, using vapour deposition electrode pattern layer on polarized film.
Preferably, the macromolecule membrane is ferroelectric polymer film, and electrode pattern layer material is conducting metal or conduction
Metal nitride.
Preferably, the ferroelectric polymer film prepares precursor solution by trifluoro-ethylene, Kynoar and solvent and existed
Formed on substrate, wherein, trifluoro-ethylene is 1 with Kynoar proportioning：(3-5).
Preferably, in the precursor solution, trifluoro-ethylene is 1 with Kynoar proportioning:4.
Preferably, described is specially that macromolecule membrane is heated into 100-150 DEG C and 60- is reached by macromolecule membrane crystallization
70% crystallization.
Preferably, further comprise being pre-processed before macromolecule membrane crystallization, the pretreatment is that macromolecule is thin
Film is heated to 100-120 DEG C of removing solvent.
Preferably, the macromolecule membrane thickness is less than or equal to 30 μm.
Preferably, the macromolecule membrane thickness is less than or equal to 9 μm.
Another technical scheme that the present invention solves technical problem is to provide a kind of ultrasonic fingerprint recognizer component, the ultrasound
Ripple fingerprint recognition component is prepared using the preparation method of above-mentioned ultrasonic fingerprint recognizer component.
The technical scheme that the present invention solves technical problem is to provide a kind of electronic installation, and it includes ultrasonic wave as described above and referred to
Line recognizer component.
Compared with prior art, ultrasonic fingerprint recognizer component and preparation method, electronic installation of the present invention have following excellent
Point：
Polarized film is formed by forming macromolecule membrane on substrate, and by macromolecule membrane crystallization and polarization in situ,
Polarized film is away from, by metal mask plate formation electrode pattern layer, high with sensitivity, accuracy is strong, preparation side in substrate side
Method is simple, and cost is low, is adapted to mass large-scale production.
Have high sensitivity, precision height and service life long using the ultrasonic fingerprint recognizer component and electronic installation
The features such as.
【Brief description of the drawings】
Fig. 1 is the process flow diagram of ultrasonic fingerprint recognizer component preparation method of the present invention.
Fig. 2 is the technique idiographic flow schematic diagram of ultrasonic fingerprint recognizer component preparation method of the present invention.
Fig. 3 is the process flow diagram that the present invention polarizes macromolecule membrane crystallization and original position.
【Embodiment】
In order that the purpose of the present invention, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
First embodiment of the invention provides a kind of ultrasonic fingerprint recognizer component preparation method, and it includes step S1, in base
Macromolecule membrane is formed on plate, and macromolecule membrane crystallization and polarization in situ are formed into polarized film；Step S2, it is remote in polarized film
Electrode pattern layer is formed by metal mask plate in substrate side.In embodiments of the present invention, the substrate is for carrying height
The support member of molecular film, can be changed and is transmitted using modes such as leads, therefore be the substrate of broad sense with auxiliary signal.It is preferred that
Ground, the substrate is the substrate that surface is provided with thin film transistor (TFT), hereinafter referred to as TFT substrate.Herein below refers to Fig. 1 and figure
2 are specifically described by example of TFT substrate.
Step S1, forms macromolecule membrane, and macromolecule membrane crystallization and polarization in situ are formed into polarized film on substrate：
It includes step S11, pretreatment；Step S12, forms macromolecule membrane on the tft substrate；Step S13, macromolecule membrane is brilliant
Change and polarization in situ；Specifically include herein below：
Step S11, pretreatment：TFT substrate is cleaned and O is used2Carry out plasma surface treatment.
Step S12, forms macromolecule membrane on the tft substrate：The macromolecule membrane is ferroelectric polymers, concretely
Such as polyvinylidene fluoride PVDF；Polyvinylidene fluoride trifluoro-ethylene PVDF-TrFE, polymetylmethacrylate, polytetrafluoro
Ethene TEFLON etc..Illustrated in the present invention with polyvinylidene fluoride trifluoro-ethylene.Take trifluoro-ethylene and Kynoar
As raw material, with butanone (methyl ethyl ketone, MEK) or 1-METHYLPYRROLIDONE (N-Methyl
Pyrrolidone, NMP) mix as solvent and (which material specifically can also be, confirm with inventor and expand), before preparation
Body solution.Wherein trifluoro-ethylene and Kynoar proportioning are 1：(3-5), it is preferable that in the precursor solution, trifluoro second
Alkene is 1 with Kynoar proportioning：4.Precursor solution is wherein appointed by spin coating, spraying, slot coated, silk-screen or injection etc.
A kind of mode of anticipating forms the macromolecule membrane less than or equal to 30 μm on the tft substrate.The present invention some preferably in embodiment,
Using coating machine or screen process press, carry out slot coated or be prepared by silk-screen printing, so that film forming thickness is accurately controlled, to protect
Demonstrate,prove macromolecule membrane thickness and be less than or equal to 30 μm.Control the macromolecule membrane thickness to be less than or equal to 30 μm, electronics can be reduced
The thickness of equipment, reduces cost, improves the applicability of product, while also meeting lightening growing to electronic equipment of people
Demand.
Preferably, the macromolecule membrane formed on the tft substrate is less than or equal to 9 μm.Control the macromolecule membrane
Thickness is less than or equal to 9 μm, can further greatly reduce its applicable such as noise measuring equipment, wearable device, sonar system
The thickness of the products such as product, consumer-elcetronics devices, portable medical device product or structural member detection.
Step S13, macromolecule membrane crystallization and polarization in situ are comprised the following steps：
Referring to Fig. 3, step S131, crystallization processes processing is carried out by macromolecule membrane, to reach that 60-70% is crystallized.
Specially macromolecule membrane is pre-processed.The pretreatment is that macromolecule membrane is heated into 100-120 DEG C, removes solvent
NMP or MEK.Macromolecule membrane is first heated to 100-120 DEG C of removing solvent before macromolecule membrane crystallization, to avoid solvent from waving
Hair produces bubble or influence crystallization uniformity, to ensure the quality of macromolecule membrane.Then 100-150 DEG C is again heated to, and is added
Hot macromolecule membrane 3-7h is so that macromolecule membrane reaches that 60-70% is crystallized.It can specifically be irradiated using laser or strong light
Or in atmosphere furnace or common other modes are heated.The strong light can select infrared light.Preferably, the macromolecule is thin
Film crystallization temperature is 140 ± 1 DEG C, and crystallization time is 5h, to ensure that macromolecule membrane reaches that 60-70% is crystallized, crystal particle diameter
For tens nanometers of effects, uniformity is crystallized in macromolecule membrane so as to improve.In some preferably embodiment, it can formed
During macromolecule membrane, doping introduces the element for promoting crystallization, with laser emission or strong light or atmosphere stove heat
It is preceding to be beneficial to trigger crystallization or produce the nuclei of crystallization and implement to heat.In other preferably embodiment, can continuously repeat into
Row heating, laser emission, heat treatment operations, to reduce defect in crystallization caudacoria.
Step S132, carries out polarization in situ, to form polarized film by the macromolecule membrane after crystallization.
One kind is provided the China of Application No. 201710108374.9 (for details, reference can be made to specially using electric field polarization method in situ
Profit application), comprise the following steps that：
It is first surface that macromolecule membrane, which is defined, close to TFT substrate side, and macromolecule membrane is the away from TFT substrate side
Two surfaces.It is zero to set first surface potential, and the first electric field and the second electric field, described first are provided in the top of second surface
Electric field potential is higher than the potential of second electric field, in the environment in the presence of first electric field above ionization macromolecule membrane
Gas, the environmental gas after the ionization is gathered in the macromolecule membrane second surface through second electric field, makes described
The film internal electric field along the film thickness direction is formed in macromolecule membrane, the macromolecule membrane is polarized.Monitoring institute
The degree of polarization of the film electric current and needs of stating macromolecule membrane determines polarization terminal, to form polarized film on the tft substrate, obtains
Obtain polarized film.
Determined in the change of polarization method in situ provided by the present invention by monitoring the film electric current of macromolecule membrane
Polarize terminal, can preferably ensure to obtain that piezo-electric effect is strong and polarized film of service life length, and when determining same polarization terminal
When, the conductive film consistency of performance obtained every time after polarization is good.
The present invention provides one kind and (for details, reference can be made to Application No. using X-ray ionization polarization method in situ
201611222575.3 Chinese patent application), comprise the following steps that：
Setting makes macromolecule membrane potential be zero, and a high electric field and an existing fringing field, institute are provided above macromolecule membrane
The potential that high electric field potential is higher than the existing fringing field is stated, using the environmental gas above X-ray ionization macromolecule membrane and in institute
State under high electric field effect, the environmental gas is deposited on the macromolecule membrane surface through the existing fringing field, makes the high score
The film internal electric field along the film thickness direction is formed in sub- film, so as to complete the polarization in situ of the macromolecule membrane.Adopt
With method similar to the above by monitor macromolecule membrane film electric current change come determine polarize terminal.
Referring again to Fig. 1 and Fig. 2, step S2, in polarized film away from forming electrode by metal mask plate in substrate side
Patterned layer.It is included using the metal mask plate with setting pattern, in polarized film away from forming electrode pattern in substrate side
Layer；Its particular content is as follows：
Step S21, makes the metal mask plate with a setting pattern, and metal mask plate is pre-processed；Step
S22, metal mask plate is fitted on polarized film, and metal mask plate pattern void region forms required electrode on polarized film
Patterned layer；Step S23, performance test and encapsulation.Comprise the following steps that：
Step S21, makes the metal mask plate with a setting pattern, and metal mask plate is pre-processed：Using
The metal that the on-deformable metal of any of which intensity such as stainless steel, aluminium, titanium or titanium alloy makes the setting pattern is covered
Template.Preferably, metal mask plate is made using stainless steel, to ensure that metal mask plate has certain metal strength not variable
Shape and with preferable planarization, while also to be formed after electrode pattern layer to be easy to clean and reuse to utilize.Preferably, the gold
It is 0.5-2mm to belong to mask plate thickness, to ensure that setting pattern has preferable resolution ratio, while it is suitable to have metal mask plate
Flatness.It is first surface to define metal mask plate laminating polarized film one side, and relative another side is second surface.To metal
Mask plate first surface and second surface, which are respectively processed, reaches different effects.Specifically, the first table of laminating polarization mould
The multiple tracks such as face blast, grinding or diamond bit smart car are finished, to reach mirror-smooth.Handled by finishing, make first
Surface mirror-smooth, so as to ensure to wear and tear or scratch polarized film during metal mask plate laminating, it is ensured that product yield.Second table
Face uses sandblasting, is coated with metallic particles or coats antifouling paint etc., increases its surface roughness to 50-100 μm.At processing
Reason the roughness of second surface is reached 50-100 μm, with ensure to be vapor-deposited the electrode pattern layer when with stronger combination
Power so that electrode pattern layer is stable will not to be slid or extend, it is to avoid short circuit or open circuit occur, improve product yield.
Step S22, metal mask plate is fitted on polarized film, the metal mask plate pattern void region shape on polarized film
Into required electrode pattern layer：The metal mask plate contraposition with setting pattern is precisely by the first of the metal mask plate
Surface is fitted in polarized film surface, and control technological temperature is less than or equal to 100 DEG C, and using vapour deposition process, metal is covered on polarized film
Die plate pattern void region forms electrode pattern layer, then metal mask plate is removed, that is, obtains ultrasonic fingerprint recognizer component electricity
Pole figure case, namely transmitting and reception Tx and Rx electrodes.Wherein, the electrode pattern sandwich circuit is prepared using the metal mask plate
Width is more than or equal to 100 μm, and thickness is 0.1-0.5 μm.Preferably, the thickness is 0.25-0.35 μm.Covered using the metal
Template carries out electrode pattern layer preparation, directly can belong to mask plate by ferroalloy, directly removes, easy to operate, saves and prepares light
The technique of photoresist layer, mask layer and lift-off mask layer etc., greatlys save technological process and cost.
Using CVD method, metal mask plate pattern void region forms electrode pattern layer on polarized film, and its is specific
Comprise the following steps：
The TFT substrate with polarized film in situ obtained in step S13 is placed in magnetic control sputtering film plating device.To magnetic control
The chamber for preparing of Sputting film-plating apparatus is evacuated to 10-5Pa-10Pa, is passed through inert gas while then persistently vacuumizing again, this
Embodiment is preferably argon gas so that air pressure inside is maintained in the range of 0.1-10Pa.
The anion of the electronics of the overheat produced in control sputter procedure or other carrying energy is by electromagnetism field containment, it is to avoid
It is splashed on intermediate maturity surface, so as to control to prepare chamber technological temperature less than or equal to 100 DEG C, realizes low temperature vapor deposition
Plated film (particular content may refer to the B United States Patent (USP)s of US 009303312 of Application No.).Using low temperature vapor deposition electricity
Pole figure pattern layer, preparation efficiency is high, can reach that preparing 0.15 μm/min of thickness, i.e., 0.3 μm only needs 2-3min to complete, and compares
The existing slow baking of low temperature needs a few hours for 0.1 μm for electrode pattern layer thickness, can greatly improve efficiency, shortens manufacturing cycle,
It is advantageously implemented industrialization production.
The present invention some preferably in embodiment, above-mentioned magnetic control sputtering film plating device is using recirculated cooling water around plated film
Target with aid in reduce temperature；And/or additional auxiliary electrode is introduced around sputtering target material, due to what is formed around sputtering target material
It is positive bias, positive bias is implemented by auxiliary electrode, using the principle that there is a natural attraction between the sexes, by the hot electron produced in sputter procedure
Or other anion electronics are adsorbed onto auxiliary electrode surface, reduce hot electron or other anions are banged middle finished surface
Hit, so as to reduce the temperature (Chinese patent application that for details, reference can be made to Application No. 201611232745.6) in sputter procedure.
It should be understood that present invention control in sputter procedure prepares chamber technological temperature less than or equal to 100 DEG C, the above is not restricted to
The method of the reduction temperature.
Preferably, the material of the electrode pattern layer is common conducting metal or conductive metal nitride.Conductive gold
Category can use any of which such as aluminium, nickel, copper, silver, titanium, tantalum and gold.Conductive metal nitride, such as titanium nitride, nitridation
Niobium, tantalum nitride, tungsten nitride or zirconium nitride any one.
It should be understood that in some preferably embodiment, sputtering, evaporation, arc-plasma plating, ion plating and molecule
Beam epitaxy etc. is used equally for forming the electrode pattern layer.
Step S23, performance test and encapsulation.By TFT component testings, cutting, solidification and encapsulate on glass substrate,
Obtain ultrasonic fingerprint recognizer component.
Second embodiment of the invention provides a kind of ultrasonic fingerprint recognizer component, and it uses ultrasonic fingerprint as described above
Recognizer component preparation method is prepared.The ultrasonic fingerprint recognizer component includes substrate, polarized film and electrode pattern layer, institute
Electrode pattern layer is stated positioned at polarized film away from the substrate side.The polarized film is less than or equal to 30 μm, it is preferable that the polarization
Film is less than or equal to 9 μm.The control polarization film thickness is less than or equal to 9 μm, can greatly reduce its applicable as noise measuring is set
The products such as standby, wearable device, sonar system product, consumer-elcetronics devices, portable medical device product or structural member detection
Thickness, also greatly improves its scope of application.Ultrasonic fingerprint is prepared using the ultrasonic fingerprint recognizer component preparation method to know
Other component, preparation method is simple, and cost is low, is adapted to mass large-scale production.
Third embodiment of the invention provides a kind of electronic installation, and it includes ultrasonic fingerprint recognizer component as described above.
The electronic installation includes information technoloy equipment, wearable device, gate inhibition's identification, vehicle-mounted igniting identification, bank, business payment
The electronic product such as system and government or military identification.The electronic installation is had using the ultrasonic fingerprint recognizer component
The features such as sensitivity height, precision height and long service life.
Compared with prior art, ultrasonic fingerprint recognizer component and preparation method, electronic installation of the present invention have following excellent
Point：
Polarized film is formed by forming macromolecule membrane on substrate, and by macromolecule membrane crystallization and polarization in situ,
Electrode pattern layer is formed on polarized film, high with sensitivity, accuracy is strong, and preparation method is simple, and cost is low, is adapted to mass big
Large-scale production.
Have high sensitivity, precision height and service life long using the ultrasonic fingerprint recognizer component and electronic installation
The features such as.
The foregoing is only present pre-ferred embodiments, be not intended to limit the invention, it is all principle of the present invention it
Interior made any modification, equivalent substitution and improvement etc. all should be comprising within protection scope of the present invention.
Claims (11)
1. a kind of preparation method of ultrasonic fingerprint recognizer component, it is characterised in that：It is thin that it is included in formation macromolecule on substrate
Film, and macromolecule membrane crystallization and polarization in situ are formed into polarized film, in polarized film away from passing through metal mask in substrate side
Plate shape is into electrode pattern layer.
2. the preparation method of ultrasonic fingerprint recognizer component as described in claim 1, it is characterised in that：It is described in polarized film
It is away from electrode pattern layer is formed by metal mask plate in substrate side：Technological temperature is controlled to be less than or equal to 100 DEG C, in polarization
Using vapour deposition electrode pattern layer on film.
3. the preparation method of ultrasonic fingerprint recognizer component as described in claim 1, it is characterised in that：The macromolecule is thin
Film is ferroelectric polymer film, and electrode pattern layer material is conducting metal or conductive metal nitride.
4. the preparation method of ultrasonic fingerprint recognizer component as described in claim 3, it is characterised in that：The ferroelectric polymer
Thing film prepares precursor solution by trifluoro-ethylene, Kynoar and solvent and formed on substrate, wherein, trifluoro-ethylene is with gathering
Vinylidene proportioning is 1：(3-5).
5. the preparation method of ultrasonic fingerprint recognizer component as described in claim 4, it is characterised in that：The presoma is molten
In liquid, trifluoro-ethylene is 1 with Kynoar proportioning:4.
6. the preparation method of ultrasonic fingerprint recognizer component as described in claim 4, it is characterised in that：It is described by macromolecule
Film crystallization is specially that macromolecule membrane is heated into 100-150 DEG C and reaches that 60-70% is crystallized.
7. the preparation method of ultrasonic fingerprint recognizer component as described in claim 6, it is characterised in that：Further comprise
Pre-processed before macromolecule membrane crystallization, the pretreatment is that macromolecule membrane is heated into 100-120 DEG C of removing solvent.
8. the preparation method of the ultrasonic fingerprint recognizer component as described in claim any one of 1-7, it is characterised in that：The height
Molecular film thickness is less than or equal to 30 μm.
9. the preparation method of ultrasonic fingerprint recognizer component as described in claim 8, it is characterised in that：The macromolecule is thin
Film thickness is less than or equal to 9 μm.
10. a kind of ultrasonic fingerprint recognizer component, it is characterised in that：It uses the ultrasound as described in claim any one of 1-7
It is prepared by ripple fingerprint recognition component preparation method.
11. a kind of electronic installation, it is characterised in that：It includes ultrasonic fingerprint recognizer component as claimed in claim 10.
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| CN201710220114.0A CN107229901A (en) | 2017-04-05 | 2017-04-05 | Ultrasonic fingerprint recognizer component and preparation method, electronic installation |
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| CN201710220114.0A CN107229901A (en) | 2017-04-05 | 2017-04-05 | Ultrasonic fingerprint recognizer component and preparation method, electronic installation |
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| CN107977602A (en) * | 2017-10-10 | 2018-05-01 | 成都安瑞芯科技有限公司 | Ultrasonic fingerprint identification module, module, device and electronic equipment |
| CN109815838A (en) * | 2018-12-29 | 2019-05-28 | 武汉华星光电技术有限公司 | The preparation method of polymer composite and the display panel of fingerprint recognition |
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| CN104751128A (en) * | 2015-03-06 | 2015-07-01 | 南昌欧菲生物识别技术有限公司 | Fingerprint identification device, touch screen and electronic equipment |
| CN104915637A (en) * | 2015-04-22 | 2015-09-16 | 麦克思股份有限公司 | Manufacturing method of fingerprint identification module |
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| JPH0774407A (en) * | 1993-08-31 | 1995-03-17 | Toray Ind Inc | Piezoelectric high polymer film, surface wave piezoelectric element and ultrasonic transducer |
| CN104751128A (en) * | 2015-03-06 | 2015-07-01 | 南昌欧菲生物识别技术有限公司 | Fingerprint identification device, touch screen and electronic equipment |
| CN104915637A (en) * | 2015-04-22 | 2015-09-16 | 麦克思股份有限公司 | Manufacturing method of fingerprint identification module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107977602A (en) * | 2017-10-10 | 2018-05-01 | 成都安瑞芯科技有限公司 | Ultrasonic fingerprint identification module, module, device and electronic equipment |
| CN109815838A (en) * | 2018-12-29 | 2019-05-28 | 武汉华星光电技术有限公司 | The preparation method of polymer composite and the display panel of fingerprint recognition |
| US11521414B2 (en) | 2018-12-29 | 2022-12-06 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Method for preparing polymer composite material and display panel for fingerprint recognition |
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