CN107946459A - A kind of whole soln preparation method of oxide memristor - Google Patents
A kind of whole soln preparation method of oxide memristor Download PDFInfo
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
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- 238000012545 processing Methods 0.000 claims description 7
- JQBMTMBJMXRRCJ-UHFFFAOYSA-N zinc;dihydrate Chemical compound O.O.[Zn] JQBMTMBJMXRRCJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 150000001336 alkenes Chemical class 0.000 claims description 4
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- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
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- 239000002253 acid Substances 0.000 claims 1
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- WEUCTTBUEWINIJ-UHFFFAOYSA-N acetic acid;zinc;dihydrate Chemical compound O.O.[Zn].CC(O)=O WEUCTTBUEWINIJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of whole soln preparation method of oxide memristor, the oxide memristor includes substrate, bottom electrode layer, middle dielectric layer and top electrode layer successively from the bottom to top, the material of wherein described bottom electrode layer is AZO conductive films, and thickness is 50 ~ 300nm；The material of the middle dielectric layer is ZnO, and thickness is 20 ~ 100nm；The material of the top electrode layer is graphene film, and thickness is 20 ~ 200nm.The whole soln method, which prepares oxide memristor, includes three key steps：AZO bottom electrode layers are prepared on the substrate of sol-gal process after cleaning, ZnO middle dielectric layers, suction method deposited graphite alkene top electrode layer on AZO middle dielectric layers are deposited on bottom electrode layer.Memristor is made by whole soln method in the present invention, greatly reduces the cost for preparing memristor, and technique is simple, is adapted to heavy industrialization.
Description
Technical field
The present invention relates to a kind of preparation method of memristor, more particularly to it is a kind of it is inexpensive, can large-scale industry metaplasia
Produce the whole soln preparation method of memristor.
Background technology
Memristor is the 4th kind of basic passive electronic in addition to resistor, capacitor, inductor.Memristor has
The dimension of resistance, but have the non-linear electric property different from conventional, electric-resistance.The resistance value of memristor can be with flowing through its electricity
Lotus amount and change, and its resistance value state can be kept in turn-off current.Memristor is in resistance-variable storing device and nerve
Existing extensive research on network.Resistance-variable storing device have it is simple in structure, integrated level is high, service speed is high, energy consumption is low, with tradition
The advantages such as CMOS technology compatibility, are expected to substitute static memory, dynamic memory and flash memory comprehensively in the near future.Memristor
For artificial intelligence neural networks chip, it can break through the bottleneck that computer architecture is met with, and more preferable reply is multiple
Miscellaneous big data problem, and power consumption is lower, speed faster.
The structure of memristor is followed successively by top electrode, storage medium layer and bottom electrode from top to bottom.ZnO recalls as dielectric layer
Resistance utensil has good change resistance performance.The dielectric layer and electrode generally use electron beam evaporation, thermal evaporation, magnetic control of ZnO memristors
Prepared by the vacuum vapor depositions such as sputtering, but these preparation methods are high to equipment requirement, and manufacturing cost is high.Solwution method is used as
A kind of film plating process under non-vacuum condition, has the advantages of cost is low, and equipment is simple, has some research institutions both at home and abroad
Prepared using solwution method except the ZnO dielectric layers with excellent memristor performance.However, since electrode size is small, electric conductivity is wanted
Ask high, realize that preparing for electrode is relatively difficult with solwution method.This patent is prepared for having excellent change resistance performance using whole soln method
AZO/ZnO/ G memory resistors, this method for reduce memristor manufacturing cost, realize the production of industry, have it is important
Meaning.The content of the invention
It is an object of the invention to provide the cost effective method that whole soln method under a kind of non-vacuum condition prepares memristor, use are molten
Liquid method forms the memristor of bottom electrode layer, middle dielectric layer and top electrode layer three-decker composition on substrate successively.
To achieve the above object, the technical solution adopted by the present invention is：
Oxide memristor is prepared using whole soln method, the oxide memristor include successively from the bottom to top bottom electrode layer, in
Between dielectric layer and top electrode layer, wherein the material of the bottom electrode layer is AZO conductive films, thickness is 50 ~ 300nm；It is described
The material of middle dielectric layer is ZnO, and thickness is 20 ~ 120nm；The material of the top electrode layer is graphene film, thickness for 20 ~
200nm.The whole soln method, which prepares oxide memristor, includes three key steps, step 1：Using sol-gel process clear
AZO bottom electrode layers are prepared on substrate after washing；Step 2：ZnO intermediate mediums are deposited on bottom electrode layer using sol-gel process
Layer；Step 3, using suction method on AZO middle dielectric layers deposited graphite alkene top electrode layer.
Specifically, the step 1 includes：
1）Substrate processing：Substrate base is cleaned, and the substrate is pre-processed：First be respectively adopted acetone, absolute ethyl alcohol, go from
Sub- water carries out supersound process 5 ~ 10 minutes to the substrate, nitrogen drying, in order that removing surface impurity dusty material；Again to lining
Bottom carries out plasma treatment 2 ~ 5 minutes to improve wellability of the colloidal sol to substrate；
2）AZO bottom electrode layers are deposited on substrate：a）Acetic acid dihydrate zinc, nine water nitric acid are dissolved as precursors, monoethanolamine
For stabilizer, absolute ethyl alcohol is solvent；The pH value of nitre acid-conditioning solution is added, is conducive to improve the electric conductivity of final AZO films；
Wherein the molar concentration of zinc ion is 0.4mol/L, and the molar ratio of wherein each component is：Zinc ion:Monoethanolamine:Aluminium ion:Nitric acid
=1:1:（0.008~0.01）:（0.055~0.1）；By the proportioned solution of each component be put into supersonic cleaning machine concussion 1 it is small when,
Then 60 DEG C of holding half an hour in baking oven, it is aged again at room temperature 5 days, obtains the AZO precursor sols of clear；b）It will prepare
Precursor sol spin coating on substrate, 250 DEG C bakee 5 minutes.Repeat spin coating-baking and obtain the AZO of suitable thickness 5 ~ 7 times；
c）The AZO that will be obtained after baking, in argon gas, 600 ~ 1000 DEG C of short annealings 1 ~ 5 minute are to activate Al3+, improve AZO films
Electric conductivity；Obtain AZO bottom electrode layers.
Specifically, the step 2 includes： 1）Acetic acid dihydrate zinc is precursors, and monoethanolamine is stabilizer, anhydrous
Ethanol is solvent, forms mixed solution, and the molar concentration scope of zinc ion is 0.4 ~ 1mol/L, zinc ion:Monoethanolamine by rub
That concentration ratio=1:1；By when concussion 1 is small in mixed solution supersonic cleaning machine, 60 DEG C of holding half an hour, are aged 5 at room temperature in baking oven
My god, obtain the ZnO precursor sol of clear；2）Precursor sol is spun on AZO bottom electrode layers, 250 DEG C bakee 5 points
Clock, obtains ZnO medium layer films；3）By the ZnO medium layer films after baking, when 300 DEG C of annealing 1 are small in holding furnace, and it is cold
But to room temperature, to further improve film crystal quality；Obtain ZnO middle dielectric layers.
Specifically, the step 3 includes：1）By acetone solution in deionized water, the mass fraction for making acetone is about
75%, after being stirred at room temperature uniformly, high-purity crystalline flake graphite is added, obtains the graphite dispersing solution that concentration is about 3mg/ml；2）By stone
After black dispersion liquid ultrasonic wave decentralized processing, standing 24 obtains the dispersion liquid containing graphene when small, by the dispersion liquid of graphene-containing
Uniform graphene dispersing solution is obtained after processing is centrifuged；3）By the use of copper mesh as mask plate, using the side of vacuum filtration
Formula obtains Graphene electrodes one by one on filter membrane, and then these electrodes are transferred on the substrate that deposited ZnO/AZO respectively,
G/ZnO/AZO devices are made.2）By obtained device 300 DEG C in nitrogen, anneal 5-10 min, quick by air-cooled and water cooling
It is cooled to room temperature, obtains the G/ZnO/AZO devices with memristor performance.
Compared with prior art, the invention has the advantages that：
（1）The present invention is used as raw material using cheap acetic acid dihydrate zinc, nine water aluminum nitrates, graphite etc., with anhydrous second
Memristor is made by whole soln method as solvent in the organic solutions such as alcohol, acetone, greatly reduce prepare memristor into
This.
（2）The present invention prepares film using solwution method, it is not necessary to which complicated equipment, preparation process are simple, it can be achieved that big rule
Mould industrialized production.
Brief description of the drawings
Fig. 1 is the structure diagram of memristor of the present invention.
1 is substrate in Fig. 1, and 2 be bottom electrode layer, and 3 be middle dielectric layer, and 4 be top electrode layer.
Fig. 2 is the current-voltage characteristic curve that embodiment 1 prepares the memristor that interlayer dielectric thickness is about 30nm.
Fig. 3 is the current-voltage characteristic curve that embodiment 1 prepares the memristor that interlayer dielectric thickness is about 50nm.
Fig. 4 is the current-voltage characteristic curve that embodiment 1 prepares the memristor that interlayer dielectric thickness is about 75nm.
Fig. 5 is the current-voltage characteristic curve that embodiment 1 prepares the memristor that interlayer dielectric thickness is about 100nm.
Embodiment
In order to more specifically describe the present invention, below in conjunction with the accompanying drawings and embodiment carries out specifically the present invention
It is bright.
Memristor prepared by the present invention, as shown in Figure 1, the bottom formed successively including substrate, on substrate is electric for its structure
Pole layer, middle dielectric layer and top electrode layer.The bottom electrode layer of various embodiments of the present invention uses AZO prepared by collosol and gel spin-coating method
Film, middle dielectric layer use ZnO film prepared by collosol and gel spin-coating method, the graphite that top electrode layer is prepared using vacuum filtration
Alkene film.
Embodiment 1
The preparation method of the memristor of the present embodiment is as follows：
Step 1, there is provided a substrate base, and the substrate is pre-processed：The substrate of the present embodiment is thermal oxide silicon chip, i.e., sharp
Layer of silicon dioxide layer is formed on monocrystalline silicon piece with the method for thermal oxide, is a kind of dielectric substrate.Acetone, nothing is first respectively adopted
Water-ethanol, deionized water carry out supersound process 5 ~ 10 minutes to the substrate respectively, and nitrogen drying, removes surface impurity dust thing
Matter；Plasma treatment is carried out 2 ~ 5 minutes to substrate to improve infiltration of the colloidal sol to substrate again.
Step 2, using solwution method depositions of bottom electrode layer on substrate：Acetic acid dihydrate zinc is dissolved in absolute ethyl alcohol,
The molar concentration for making zinc ion is 0.4mol/L, is stirred at room temperature to dissolving, and monoethanolamine, nine water are sequentially added into solution
The content of aluminum nitrate and nitric acid, wherein monoethanolamine is monoethanolamine in molar ratio:Zinc ion=1:1, Al3+Doping compare for 0.8at%,
The doping of nitric acid is compared for 5.5 at%, mixed solution is shaken in supersonic cleaning machine 1 it is small when, then in baking oven 60 DEG C keep half
Hour, gained mixed solution is aged 5 days at room temperature, obtains the AZO precursor sols of clear；The hearth electrode of preparation is molten
Glue is deposited on substrate using spin coating mode, is repeated 5 times to obtain the film of 160nm thickness；Obtained hearth electrode film is put into soon
Made annealing treatment in fast annealing stove, annealing conditions are 800 DEG C of short annealings 2 minutes in argon gas.
Step 3, middle dielectric layer is deposited on bottom electrode layer using solwution method：Acetic acid dihydrate zinc is dissolved in anhydrous second
In alcohol, the molar concentration for making zinc ion is 0.81mol/L, it is stirred at room temperature to dissolving, monoethanolamine is added into solution,
The content of monoethanolamine is monoethanolamine in molar ratio:Zinc ion=1:1, mixed solution is shaken in supersonic cleaning machine 1 it is small when, so
Afterwards in baking oven after 60 DEG C of holding half an hour, gained mixed solution is aged 5 days at room temperature, obtains the ZnO precursor of clear
Colloidal sol；The middle dielectric layer colloidal sol of preparation is deposited on bottom electrode layer by the way of spin coating；The middle dielectric layer that will be obtained
Film carry out in atmosphere, under the conditions of 300 DEG C annealing 1 it is small when.
Step 4, top electrode layer is deposited on middle dielectric layer using solwution method：1）By acetone solution in deionized water,
The mass fraction for making acetone is about 75%, after being stirred at room temperature uniformly, high-purity crystalline flake graphite is added into mixed liquor, is obtained dense
Degree is about the graphite dispersing solution of 3mg/ml.2）After graphite dispersing solution ultrasonic wave decentralized processing, standing 24 is obtained containing stone when small
The dispersion liquid of black alkene, uniform graphene dispersing solution is obtained after the dispersion liquid of graphene-containing is centrifuged processing.3）With
Copper mesh obtains Graphene electrodes one by one, then by these electrodes by the way of vacuum filtration as mask plate on filter membrane
It is transferred to respectively on the substrate that deposited ZnO/AZO, G/ZnO/AZO devices is made.2）By obtained device 300 in nitrogen
DEG C, anneal 5min, is quickly cooled to room temperature by air-cooled and water cooling, obtains the G/ZnO/AZO devices with memristor performance.
Electrical testing is carried out to memristor manufactured in the present embodiment, during test, is grounded with hearth electrode, top electrode applies electricity
Pressure.Its current-voltage characteristic curve as shown in Figure 2-5, wherein passing through step 3）The control of middle spin coating parameters, obtains different thickness
The middle dielectric layer ZnO film of degree；Fig. 2 is the performance diagram that middle dielectric layer ZnO film thickness is about 30nm, during Fig. 3 is
Between dielectric layer ZnO film thickness be about 50nm performance diagram, Fig. 4 for middle dielectric layer ZnO film thickness be about 75nm's
Performance diagram, Fig. 5 are the performance diagram that middle dielectric layer ZnO film thickness is about 100nm.The characteristic of device as seen from the figure
Curve map all contains two parts：A part is electric forming process, and another part is the work song of set process and reseting procedure
Line.It can be seen that all devices all realize the transformation of resistance.
Embodiment 2
With embodiment 1 difference lies in hearth electrode materials A ZO precursor solutions, the content of nitric acid is 10 at%.
Embodiment 3
With embodiment 1 difference lies in hearth electrode materials A ZO precursor solutions, spin coating-baking 7 times, obtains the thin of 200 nm thickness
Film.
Embodiment 4
Difference lies in the molar concentration of the presoma zinc ion of middle dielectric layer it is respectively 0.6mol/L with embodiment 1.
In addition, on the basis of above example, the present inventor carries out the adjusting of each technological parameter, through repetition test, this hair
Bright preferable technological parameter is such as：When depositing AZO bottom electrode layers on substrate, the molar ratio of each component is preferably：Zinc ion:Second
Hydramine:Aluminium ion:Nitric acid=1:1:（0.008~0.01）:（0.055~0.1）；, can by AZO films in argon gas during short annealing
600 ~ 1000 DEG C of preferable temperature, 1 ~ 5 minute time is to activate Al3+, the electric conductivity of raising AZO films；Each layer thickness of memristor is excellent
Select AZO conductive films thickness for 50 ~ 300nm, middle dielectric layer be ZnO thickness be 20 ~ 100nm, top electrode layer graphene film
Thickness is 20 ~ 200nm.Technique is adjusted in preferable parameter area more than, obtains suitable with embodiment 1 there is memristor
The G/ZnO/AZO devices of energy.
Technical scheme and beneficial effect is described in detail in above-described embodiment, Ying Li
Solution is the foregoing is merely presently most preferred embodiment of the invention, is not intended to limit the invention, all principle models in the present invention
Interior done any modification, supplementary, and equivalent replacement etc. are enclosed, should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of method that whole soln method prepares oxide memristor, it is characterised in that comprise the following steps：
Step 1, using preparing AZO bottom electrode layers on sol-gel process substrate after cleaning；
Step 2, ZnO middle dielectric layers are deposited on bottom electrode layer using sol-gel process；
Step 3, using suction method on AZO middle dielectric layers deposited graphite alkene top electrode layer.
2. the method according to claim 1 for preparing oxide memristor, it is characterised in that：
1）Substrate described in step 1, its cleaning includes plasma treatment 2-5 minutes, to improve wellability of the colloidal sol to substrate；
2）The step of AZO bottom electrode layers are prepared on substrate described in step 1 after cleaning includes：Acetic acid dihydrate zinc, nine water nitre
Acid is dissolved as precursors, and monoethanolamine is stabilizer, and absolute ethyl alcohol is solvent, adds the pH value of nitre acid-conditioning solution；Wherein
The molar concentration of zinc ion is 0.4mol/L, and wherein the molar ratio of each component is zinc ion：Monoethanolamine：Aluminium ion：Nitric acid=1:1：
（0.008~0.01）：（0.055~0.1）；Proportioned solution be put into supersonic cleaning machine concussion 1 it is small when, 60 DEG C of holdings in baking oven
Half an hour, is aged 5 days, obtains the AZO precursor sols of clear at room temperature；By the precursor sol spin coating substrate of preparation
On, 250 DEG C bakee 5 minutes；Repeat spin coating, bakee repeatedly；By the AZO after baking in argon gas, 600 ~ 1000 DEG C of short annealings 1
~ 5 minutes to activate Al3+To improve the electric conductivity of film；Obtain AZO bottom electrode layers.
3. the method according to claim 1 for preparing oxide memristor, it is characterised in that the deposition ZnO described in step 2
The step of middle dielectric layer, includes：1）Acetic acid dihydrate zinc is precursors, and monoethanolamine is stabilizer, and absolute ethyl alcohol is molten
Agent；The molar concentration scope of the molar concentration zinc ion of zinc ion is 0.4 ~ 1mol/L, zinc ion：The molar ratio 1 of monoethanolamine:1;
When concussion 1 is small in supersonic cleaning machine, 60 DEG C of holding half an hour in baking oven, it is aged 5 days at room temperature, before obtaining the ZnO of clear
Drive body colloidal sol；By on the precursor sol spin coating substrate of preparation, 250 DEG C bakee 5 minutes, obtain ZnO medium layer films；2）Rotation
Apply, obtain ZnO film after baking, when 300 DEG C of annealing 1 are small in holding furnace, and be cooled to room temperature, to further improve film crystalline substance
Weight；Obtain ZnO middle dielectric layers.
4. the method according to claim 1 for preparing oxide memristor, it is characterised in that the deposition stone described in step 3
The step of black alkene graphene top electrode layer, includes：1）By acetone solution in deionized water, the mass fraction for making acetone is about
75%, after being stirred at room temperature uniformly, high-purity crystalline flake graphite is added into mixed liquor, obtains the graphite point that concentration is about 3mg/ml
Dispersion liquid；2）After graphite dispersing solution ultrasonic wave decentralized processing, standing 24 obtains the dispersion liquid containing graphene when small, by graphitiferous
The dispersion liquid of alkene obtains uniform graphene dispersing solution after processing is centrifuged；3）By the use of copper mesh as mask plate, using true
Graphene is deposited on filter membrane by the mode that sky filters, and is then transferred to the electrode on filter membrane respectively and be deposited ZnO/AZO's
On substrate, G/ZnO/AZO devices are made；4）By obtained device 300 DEG C in nitrogen, anneal 5-10 min, by air-cooled and
Water cooling is quickly cooled to room temperature, obtains the G/ZnO/AZO devices with memristor performance, i.e., described oxide memristor.
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| CN201710966487.2A CN107946459B (en) | 2017-10-17 | 2017-10-17 | Full-solution preparation method of oxide memristor |
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| CN201710966487.2A CN107946459B (en) | 2017-10-17 | 2017-10-17 | Full-solution preparation method of oxide memristor |
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| CN107946459A true CN107946459A (en) | 2018-04-20 |
| CN107946459B CN107946459B (en) | 2021-10-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447987A (en) * | 2018-04-27 | 2018-08-24 | 中山大学 | A kind of preparation method of low activation voltage resistive device |
| CN108682738A (en) * | 2018-04-16 | 2018-10-19 | 中国科学院宁波材料技术与工程研究所 | A kind of full carbon memristor and preparation method thereof |
| CN109461812A (en) * | 2018-09-27 | 2019-03-12 | 西交利物浦大学 | RRAM and preparation method thereof based on aluminum oxide |
| CN109560195A (en) * | 2018-11-15 | 2019-04-02 | 南京邮电大学 | A kind of preparation method based on the uniform MXene film of silicon-based semiconductor devices and its in the application of memristor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346257A (en) * | 2013-07-09 | 2013-10-09 | 中山大学 | Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof |
| CN103500796A (en) * | 2013-10-14 | 2014-01-08 | 北京大学 | Oxide-based transparent RRAM (Resistive Random Access Memory) and preparation method thereof |
-
2017
- 2017-10-17 CN CN201710966487.2A patent/CN107946459B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346257A (en) * | 2013-07-09 | 2013-10-09 | 中山大学 | Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof |
| CN103500796A (en) * | 2013-10-14 | 2014-01-08 | 北京大学 | Oxide-based transparent RRAM (Resistive Random Access Memory) and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 叶志镇等: "《氧化锌半导体材料掺杂技术与应用》", 31 January 2009 * |
| 贾瑛等: "《轻质碳材料的应用》", 30 November 2013 * |
| 魏启东等: "太阳能电池用透明导电AZO薄膜室温生长及其性能研究", 《第十一届中国光伏大会暨展览会会议论文集 上》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682738A (en) * | 2018-04-16 | 2018-10-19 | 中国科学院宁波材料技术与工程研究所 | A kind of full carbon memristor and preparation method thereof |
| CN108682738B (en) * | 2018-04-16 | 2022-03-08 | 中国科学院宁波材料技术与工程研究所 | All-carbon memristor and preparation method thereof |
| CN108447987A (en) * | 2018-04-27 | 2018-08-24 | 中山大学 | A kind of preparation method of low activation voltage resistive device |
| CN109461812A (en) * | 2018-09-27 | 2019-03-12 | 西交利物浦大学 | RRAM and preparation method thereof based on aluminum oxide |
| CN109461812B (en) * | 2018-09-27 | 2022-07-29 | 西交利物浦大学 | Aluminum oxide-based RRAM and preparation method thereof |
| CN109560195A (en) * | 2018-11-15 | 2019-04-02 | 南京邮电大学 | A kind of preparation method based on the uniform MXene film of silicon-based semiconductor devices and its in the application of memristor |
| CN109560195B (en) * | 2018-11-15 | 2022-08-30 | 南京邮电大学 | Preparation method of uniform MXene film based on silicon-based semiconductor device and application of uniform MXene film in memristor |
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