CN107385406A - Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method - Google Patents
Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method Download PDFInfo
- Publication number
- CN107385406A CN107385406A CN201710365173.7A CN201710365173A CN107385406A CN 107385406 A CN107385406 A CN 107385406A CN 201710365173 A CN201710365173 A CN 201710365173A CN 107385406 A CN107385406 A CN 107385406A
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- Prior art keywords
- shield
- quartz wafer
- film thickness
- opening
- thickness monitoring
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of coating system and its film thickness monitoring device and a kind of film plating process and its film thickness monitoring method.Film thickness monitoring device includes shield and quartz wafer, shield can rotate against with quartz wafer, and shield is provided with opening, during rotating against, opening for Coating Materials air-flow by and reach quartz wafer, except the other parts of opening stop that air-flow reaches quartz wafer on shield.Air-flow is stopped using shield, the speed of thin film deposition on quartz wafer is slow down, extends the usage time of quartz wafer, so as to extend equipment can continuous operation time, and correspondingly reduce cost.Separately, shield can rotate against with quartz wafer, enable Coating Materials air-flow in rotary course by being uniformly deposited on after opening on quartz wafer, avoid causing the Coating Materials uneven thickness that deposits on quartz wafer because opening is set, it is ensured that and improve monitoring precision.
Description
Technical field
The present invention relates to plated film field, more particularly to a kind of coating system and its film thickness monitoring device and a kind of plated film side
Method and its film thickness monitoring method.
Background technology
In field of vacuum coating, quartz crystal vibration monitoring method is monitoring film thickness and material evaporation speed in technical process
The most frequently used method of rate.Quartz crystal vibrates monitoring method, mainly make use of the piezo-electric effect and mass loading effect of quartz crystal
Should, after the deposition film of crystal-vibration-chip surface, the vibration of crystal will weaken, the reduction of this amplitude or frequency, by being plated
What the thickness and density of film determined, the very accurate electronic equipment of utilization, each second multiple test vibration change, so as to real
Now to the real-time monitoring of evaporation rate and thicknesses of layers.
During the use of crystal-vibration-chip, with being stepped up for accumulative thickness, crystal-vibration-chip vibration frequency constantly declines, when
Frequency just needs the crystal-vibration-chip more renewed after declining to a certain extent, just can guarantee that the accuracy of measurement data.In general, exist
OLED (Organic Light Emitting Diodes：Organic Light-Emitting Diode) organic film plating technique in, under crystal oscillator frequency
Dropping to 95% of original frequency or so just needs to change crystal-vibration-chip.Therefore, filming equipment needs to regularly replace crystal-vibration-chip, especially
It is for the material that some evaporation rates are larger or film layer is thicker, frequency declines quickly crystal oscillator in use, during use
Between it is not long, it is necessary to frequently change crystal oscillator, cause equipment can continuous operation time it is short, influence equipment capacity.
The content of the invention
The technical problem to be solved in the present invention is, for quartz crystal usage time in the prior art it is short, change frequency
The defects of numerous, there is provided a kind of coating system and its film thickness monitoring device and a kind of film plating process and its film thickness monitoring method.
The technical solution adopted for the present invention to solve the technical problems is：A kind of film thickness monitoring device is provided, including is hidden
Plate and quartz wafer, shield can rotate against with quartz wafer, and shield is provided with opening, and during rotating against, opening supplies
The air-flow of Coating Materials by and reach quartz wafer, except the other parts of opening stop that air-flow reaches quartz wafer on shield.
Preferably, shield rotates relative to quartz wafer, around a rotating shaft.
Preferably, parallel to the surface of quartz wafer object gas flow, rotating shaft is respectively perpendicular on the surface of shield object gas flow
The surface of shield object gas flow and the surface of quartz wafer object gas flow.
Preferably, the radical length of the relative rotating shaft of opening radially covers whole quartz wafer in rotary course.
Preferably, shield includes multiple openings arranged around the shaft.
Preferably, the rotary rpm of shield is at least 500rpm.
Present invention also offers a kind of film thickness monitoring method, including：
Opening is set on shield；
Control shield rotates against with quartz wafer, so that during rotating against, the air-flow of Coating Materials passes through opening
And quartz wafer is reached, except the other parts of opening stop that air-flow reaches quartz wafer on shield.
Preferably, opening is set to include on shield：The aperture opening ratio of shield is adjusted, aperture opening ratio is relatively whole for the area of opening
The ratio of the area of individual shield.
Preferably, control shield and quartz wafer rotate against including：Shield is controlled to be revolved with respect to quartz wafer, around a rotating shaft
Turn.
Invention further provides a kind of coating system, include the coating source of the air-flow for producing Coating Materials, its feature
It is, coating system also includes the film thickness monitoring device of any of the above-described.
The present invention provides a kind of film plating process with film thickness monitoring again, includes the film thickness monitoring side of any of the above-described
Method.
Implement the invention has the advantages that：Air-flow is stopped using shield so that quartz-crystal can be deposited to originally
Coating Materials on piece only some can deposit on quartz wafer, the flow deposition being blocked has been arrived on shield, slow down
The speed of thin film deposition on quartz wafer, the usage time of quartz wafer is extended, so as to extend continuously running for equipment
Time, and correspondingly reduce cost.
In addition, shield can rotate against with quartz wafer so that the air-flow of Coating Materials can be in rotary course by opening
It is uniformly deposited on after mouthful on quartz wafer, avoids causing the Coating Materials thickness deposited on quartz wafer not because opening is set
, it is ensured that and improve monitoring precision.
In addition, the film thickness monitoring device of the present invention is simple in construction, easy to manufacture can be by transforming existing film thickness monitoring device
Realize upgrading, while completely compatible original coating source and coating process.
Brief description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
Fig. 1 is the structural representation of the coating system according to one embodiment of the invention；
Fig. 2 is the shield that aperture opening ratio is 1/8；
Fig. 3 is the shield that aperture opening ratio is 1/4.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Fig. 1, Fig. 1 shows the structural representation of the coating system according to one embodiment of the invention, the coating system
Including coating source 1, substrate 2 and film thickness monitoring device 3.Coating source 1 produces the air-flow 11 of Coating Materials, and the air-flow 11 is in base
Film needed for deposition formation, film thickness monitoring device 3 are used to monitor the thickness for plating film on substrate 2 on plate 2.
In an embodiment of the present embodiment, coating source 1 includes crucible, and Coating Materials is OLED material, OLED
Material, by thermal evaporation, forms air-flow 11 in crucible, and is outwards transported from mouth of pot, partly deposits on substrate 2 needed for being formed
The film wanted.It is not to the present invention's it is to be understood that being used only as illustrating using crucible and OLED material in above coating source 1
Limitation, arbitrarily suitable coating source 1 can be selected in one of ordinary skill in the art, for example, film plating process includes but is not limited to thing
Manage steam film plating process and chemical vapors plated film；Coating source 1 can be a species or multiple different types of combinations；Plating
Film source 1 can be mobile or static etc., no longer repeat one by one herein.
The part of air-flow 11 of Coating Materials reaches substrate 2 and forms required film, and another part reaches film thickness monitoring device
3, for plating the thickness of film on its monitoring substrate 2.Referring also to Fig. 1, film thickness monitoring device 3 includes shield 32 and quartz wafer
31, shield 32 can rotate against with quartz wafer 31, and shield 32 is provided with opening 321, during rotating against, opening 321
For Coating Materials air-flow 11 by and reach quartz wafer 31, the other parts on shield 32 except opening 321 stop air-flow 11
Reach quartz wafer 31.
In the prior art, the air-flow 11 of Coating Materials directly reaches quartz wafer 31, and is deposited on quartz wafer 31.This
Shield 32 is provided with the film thickness monitoring device 3 of invention, and sets the shield 32 and quartz wafer 31 to rotate against, realizes gas
11 (evaporating material) of stream can be intermittently plated on quartz wafer 31, during rotating against, only when opening 321 is located at
When the front or top of quartz wafer 31, evaporation material can be just deposited on quartz wafer 31, and remaining time, evaporation material is hidden
Plate 32 stops, deposits on shield 32 except in the other parts of opening 321.Air-flow 11 is stopped using shield 32 so that originally energy
Some can be deposited on quartz wafer 31 Coating Materials enough deposited on quartz wafer 31, and the air-flow 11 being blocked is heavy
Product has been arrived on shield 32, be slow down the speed of thin film deposition on quartz wafer 31, is extended the usage time of quartz wafer 31, from
And extend equipment can continuous operation time, and correspondingly reduce cost.
In addition, shield 32 and quartz wafer 31 during rotating against because can be achieved batch-plating so that Coating Materials
Air-flow 11 can be avoided because opening 321 is set in rotary course by being uniformly deposited on after opening 321 on quartz wafer 31
And cause the Coating Materials uneven thickness deposited on quartz wafer 31, it is ensured that and improve monitoring precision.
In addition, the film thickness monitoring device 3 of the present invention is simple in construction, easy to manufacture, can be filled by transforming existing film thickness monitoring
Put 3 realizations upgrading, while completely compatible original coating source 1 and coating process.
Specifically, shield 32 is flat structure, such as can be circular plate, arc plate etc., can be by stainless
Steel or aluminium alloy plate are process.Shield 32 is provided with opening 321, and the opening 321 is also referred to as through hole, gap, slit etc..It is logical
The aperture opening ratio that shield 32 is set is crossed, what adjustable quartz chip 31 extended uses duration, and the aperture opening ratio is the upper shed 321 of shield 32
The ratio of the area of area sum and whole shield 32, wherein the area of whole shield 32 includes the above-mentioned area of opening 321.Example
Such as, Fig. 2 shows the shield 32 that aperture opening ratio is 1/8, and Fig. 3 shows the shield 32 that aperture opening ratio is 1/4, rotated a circle in shield 32
During, if using the shield 32 that aperture opening ratio is 1/8, then only 1/8 evaporation material can be deposited on quartz wafer 31,
Remaining 7/8 deposits on the non-opening portion of shield 32, and 1/4 situation of shield 32 is similar.
In work, the rotating speed of shield 32 is at least 500rpm, can be 500~1000rpm, when 1/8 aperture opening ratio of use
When shield 32 is rotated with 600rpm rotating speed, inner opening 321 per second will have 20 fronts for rotating to quartz wafer 31, i.e., quartzy
Chip 31 is per second will to collect 20 intermittent evaporation rate signals.Film thickness monitoring device automatically can change these at a high speed
Intermittency signal takes average processing, obtains a stable output signal.Such as：Assuming that material vaporization rate is constant, do not installing
In the case of shield, the evaporation rate that quartz wafer 31 detects isAfter the shield 32 of 1/8 aperture opening ratio, quartz-crystal
The evaporation rate that piece 31 detects will be only1/8, i.e.,So as to which the usage time of quartz wafer 31 be prolonged
8 times are grown.Experiments verify that as long as the rotating speed of shield 32 is more than or equal to 500rpm, film thickness monitoring device could be well by stone
The intermittency signal that English chip 31 collects takes average processing, obtains a stable output signal.It can be seen that above, this 1/4 is opened
The usage time of quartz wafer 31 can be extended to original 4 times and 8 by the shield 32 of the aperture opening ratio of shield 32 and 1/8 of mouth rate respectively
Times.Thus, also the occlusion effect of different proportion can be realized in coating process by changing the shield 32 of different openings rate, from
And reach the effect for the usage time for extending different multiples.
Existing arbitrarily suitable quartz wafer 31 can be used in the quartz wafer 31 of the present invention, along the direction of air-flow 11, quartz
Chip 31 is located at the rear of shield 32, i.e. air-flow 11 reaches shield 32, quartz wafer 31 successively, and between quartz wafer 31 and shield 32
Separate, it is separated by a distance.
In the embodiment of the present embodiment, shield 32 rotates relative to quartz wafer 31, around a rotating shaft 322, that is, exists
In the course of work, quartz wafer 31 is relatively fixed, and shield 32 is rotatable relative.Further, the table of the object gas flow 11 of shield 32
Face parallel to the object gas flow 11 of quartz wafer 31 surface, rotating shaft 322 be respectively perpendicular to the object gas flow 11 of shield 32 surface and
The surface of the object gas flow 11 of quartz wafer 31, to ensure that air-flow 11 can be uniformly deposited on quartz wafer 31, so that it is guaranteed that prison
Control precision.Above-mentioned rotating shaft 322 both can be directly through shield 32, can also be beyond shield 32, and rotating shaft 322 in Fig. 1 is from screening
The central point of plate 32 passes through, and perpendicular to the shield 32.
After determining rotating shaft 322, radially covering is whole in rotary course for the radical length of the relative rotating shaft 322 of opening 321
Quartz wafer 31.Still by taking Fig. 1 as an example, shield 32 is provided with two openings 321, and the two openings 321 are perpendicular to the footpath of rotating shaft 322
It is respectively L1 and L2 to length, in rotary course, L1 and L2 can cover whole quartz wafer 31, i.e., opening 321 rotates to
During 31 top of quartz wafer, L1 and L2 length are all higher than the path length of quartz wafer 31, so that the air-flow 11 of Coating Materials
It can be uniformly distributed on whole quartz wafer 31.
Pattern that can also be by setting opening 321 in specific implementation process and distribution, regulation Coating Materials is in quartz wafer
Deposition uniformity on 31, so as to be effectively improved monitoring precision.For example, settable shield 32 includes multiple 322 arrangements around the shaft
Opening 321.Referring to Fig. 2 and Fig. 3, the rotating shaft (not shown) of the two circular shrouds 32 passes perpendicularly through the center of circle, multiple
Opening 321 is arranged around the shaft, preferably uniformly arrangement around the shaft.
The invention also discloses a kind of film plating process with film thickness monitoring, the film plating process includes a kind of film thickness monitoring
Method, the film thickness monitoring method include：Opening is set step S100, on shield；And step S200, control shield and quartz
Chip rotates against, so that during rotating against, the air-flow of Coating Materials by opening and reaches quartz wafer, is removed on shield
The other parts of opening stop that air-flow reaches quartz wafer.In the step s 100, the aperture opening ratio of shield is can also adjust, aperture opening ratio is
The ratio of the area of the relatively whole shield of the area of opening, so as to control quartz wafer to extend the duration used.In step S200
In, control shield rotates relative to quartz wafer, around a rotating shaft.
It is to be understood that the detail schema of the film thickness monitoring method of the present invention is explained in detail in above-mentioned film thickness monitoring device
State, can partly or entirely quote, i.e., above-mentioned any film thickness monitoring device can implement any film thickness monitoring method；The plated film of the present invention
The detail schema of method elaborates in above-mentioned coating system, can partly or entirely quote, i.e., above-mentioned any coating system
Any film plating process can be implemented, here is omitted.
It should be understood that above example only expresses the preferred embodiment of the present invention, it describes more specific and detailed
Carefully, but the limitation to the scope of the claims of the present invention therefore can not be interpreted as；It should be pointed out that the common skill for this area
For art personnel, without departing from the inventive concept of the premise, independent assortment can be carried out to above-mentioned technical characterstic, can also done
Go out several modifications and improvements, these belong to protection scope of the present invention；Therefore, it is all to be done with scope of the invention as claimed
Equivalents and modification, the covering scope of the claims in the present invention all should be belonged to.
Claims (11)
1. a kind of film thickness monitoring device, it is characterised in that including shield and quartz wafer, the shield can with the quartz wafer
Rotate against, the shield is provided with opening, during rotating against, it is described opening for Coating Materials air-flow by and arrive
Up to the quartz wafer, except the other parts of the opening stop that the air-flow reaches the quartz wafer on the shield.
2. film thickness monitoring device according to claim 1, it is characterised in that the relatively described quartz wafer of the shield, around
One rotating shaft rotates.
3. film thickness monitoring device according to claim 2, it is characterised in that put down on the surface of the shield towards the air-flow
Row in the quartz wafer towards the surface of the air-flow, the rotating shaft be respectively perpendicular to shield towards the surface of the air-flow and
The quartz wafer is towards the surface of the air-flow.
4. film thickness monitoring device according to claim 2, it is characterised in that the radial direction length of the relatively described rotating shaft of opening
Degree radially covers the whole quartz wafer in rotary course.
5. film thickness monitoring device according to claim 2, it is characterised in that the shield includes multiple around rotating shaft row
The opening of cloth.
6. film thickness monitoring device according to claim 2, it is characterised in that the rotary rpm of the shield is at least
500rpm。
A kind of 7. film thickness monitoring method, it is characterised in that including：
Opening is set on shield；
Control shield rotates against with quartz wafer, and with during rotating against, the air-flow of the Coating Materials passes through described
It is open and reaches the quartz wafer, the other parts that the opening is removed on the shield stops that the air-flow reaches the quartz
Chip.
8. film thickness monitoring method according to claim 7, it is characterised in that described to set opening to include on shield：Adjust
The aperture opening ratio of the shield is saved, the aperture opening ratio is the ratio of the area of the relatively whole shield of area of the opening.
9. film thickness monitoring method according to claim 7, it is characterised in that the control shield is relative with quartz wafer to be revolved
Subcontract and include：Control the shield relative to the quartz wafer, rotated around a rotating shaft.
10. a kind of coating system, include the coating source of the air-flow for producing Coating Materials, it is characterised in that the plating membrane system
System also includes the film thickness monitoring device described in claim any one of 1-6.
11. a kind of film plating process with film thickness monitoring, it is characterised in that including the thickness described in claim any one of 7-9
Monitoring method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710365173.7A CN107385406A (en) | 2017-05-22 | 2017-05-22 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710365173.7A CN107385406A (en) | 2017-05-22 | 2017-05-22 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107385406A true CN107385406A (en) | 2017-11-24 |
Family
ID=60338366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710365173.7A Pending CN107385406A (en) | 2017-05-22 | 2017-05-22 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108823545A (en) * | 2018-09-07 | 2018-11-16 | 京东方科技集团股份有限公司 | Crystal oscillator sonde configuration and evaporation coating device |
| CN109136856A (en) * | 2018-10-22 | 2019-01-04 | 京东方科技集团股份有限公司 | Film thickness monitoring device, film-forming apparatus |
| CN110257791A (en) * | 2019-04-29 | 2019-09-20 | 昆山国显光电有限公司 | Rate monitoring device, evaporated device and evaporation coating method |
| CN111101098A (en) * | 2018-10-26 | 2020-05-05 | 合肥欣奕华智能机器有限公司 | Evaporation control method and evaporation control system |
| CN113621932A (en) * | 2021-04-26 | 2021-11-09 | 睿馨（珠海）投资发展有限公司 | Crystal oscillator module, evaporation system and evaporation method thereof |
| CN115216735A (en) * | 2022-06-09 | 2022-10-21 | 广西自贸区睿显科技有限公司 | Quartz crystal oscillation piece deposition monitoring device and method in OLED production process |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108823545A (en) * | 2018-09-07 | 2018-11-16 | 京东方科技集团股份有限公司 | Crystal oscillator sonde configuration and evaporation coating device |
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| CN109136856A (en) * | 2018-10-22 | 2019-01-04 | 京东方科技集团股份有限公司 | Film thickness monitoring device, film-forming apparatus |
| CN109136856B (en) * | 2018-10-22 | 2020-08-14 | 京东方科技集团股份有限公司 | Film thickness monitoring device and film forming equipment |
| CN111101098A (en) * | 2018-10-26 | 2020-05-05 | 合肥欣奕华智能机器有限公司 | Evaporation control method and evaporation control system |
| CN111101098B (en) * | 2018-10-26 | 2021-11-16 | 合肥欣奕华智能机器有限公司 | Evaporation control method and evaporation control system |
| CN110257791A (en) * | 2019-04-29 | 2019-09-20 | 昆山国显光电有限公司 | Rate monitoring device, evaporated device and evaporation coating method |
| CN110257791B (en) * | 2019-04-29 | 2021-07-20 | 昆山国显光电有限公司 | Speed monitoring device, evaporation equipment and evaporation method |
| CN113621932A (en) * | 2021-04-26 | 2021-11-09 | 睿馨（珠海）投资发展有限公司 | Crystal oscillator module, evaporation system and evaporation method thereof |
| CN115216735A (en) * | 2022-06-09 | 2022-10-21 | 广西自贸区睿显科技有限公司 | Quartz crystal oscillation piece deposition monitoring device and method in OLED production process |
| CN115216735B (en) * | 2022-06-09 | 2023-07-25 | 广西自贸区睿显科技有限公司 | Quartz crystal oscillator piece deposition monitoring device and method in OLED production process |
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Application publication date: 20171124 |