CN109440078A - Film monitoring device and film monitoring method - Google Patents
Film monitoring device and film monitoring method Download PDFInfo
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- CN109440078A CN109440078A CN201910002342.XA CN201910002342A CN109440078A CN 109440078 A CN109440078 A CN 109440078A CN 201910002342 A CN201910002342 A CN 201910002342A CN 109440078 A CN109440078 A CN 109440078A
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- crystal oscillator
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- monitoring device
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
Abstract
The invention discloses a kind of film monitoring device and film monitoring methods, belong to thin film technique field.The film monitoring device includes: that shell, crystal oscillator, crystal oscillator block component and crystal oscillator monitoring assembly；The crystal oscillator and the crystal oscillator block component and are located in the shell, opening is provided on the shell, the crystal oscillator blocks component and is located between the opening and the crystal oscillator, and the crystal oscillator blocks component for reducing the membrane material steam contacted with the crystal oscillator when carrying out plated film；The crystal oscillator monitoring assembly is connect with the crystal oscillator.For the present invention by blocking component when carrying out plated film between crystal oscillator and the opening of shell, shield portions membrane material steam thereby reduces the deposition velocity of the film on crystal oscillator to reduce the membrane material steam contacted with crystal oscillator.Solve the problems, such as that the service life of film monitoring device in the related technology is shorter.The service life for improving film monitoring device is achieved the effect that.
Description
Technical field
The present invention relates to thin film technique field, in particular to a kind of film monitoring device and film monitoring method.
Background technique
Currently, when various membrane modules to be plated are deposited by evaporated device, it will usually be arranged in evaporated device
Film monitoring device, and treat by film monitoring device the filming parameters such as the film forming speed of film layer on film-coated part and supervised
It surveys.
One of the relevant technologies film monitoring device, crystal oscillator and crystal oscillator monitoring group including shell, in shell
Part, crystal oscillator monitoring assembly are used to that crystal oscillator to be driven to vibrate and monitor the vibration frequency of crystal oscillator.Opening is provided on shell, when film material
The membrane material steam that material generates enters in shell from the opening, and falls on crystal oscillator, and crystal oscillator monitoring assembly can monitor the shake of crystal oscillator
Dynamic frequency, it is subsequent the filming parameters such as coating speed to be determined according to the affected degree of vibration frequency of crystal oscillator.
In the implementation of the present invention, inventor has found the relevant technologies the prior art has at least the following problems: sinking on above-mentioned crystal oscillator
When long-pending film layer is thicker, the accuracy of parameter acquired in crystal oscillator monitoring assembly can be seriously affected, and then leads to film monitoring dress
The service life set is shorter.
Summary of the invention
The embodiment of the invention provides a kind of film monitoring device and film monitoring methods, are able to solve thin in the related technology
The service life of film monitoring device shorter problem.The technical solution is as follows:
According to the first aspect of the invention, a kind of film monitoring device is provided, the film monitoring device includes:
Shell, crystal oscillator, crystal oscillator block component and crystal oscillator monitoring assembly；
The crystal oscillator and the crystal oscillator block component and are located in the shell, and opening, the crystalline substance are provided on the shell
Vibration is blocked component and is located between the opening and the crystal oscillator, and the crystal oscillator blocks component for when carrying out plated film, reduce and
The membrane material steam of the crystal oscillator contact；
The crystal oscillator monitoring assembly is connect with the crystal oscillator.
Optionally, it includes blocking net that the crystal oscillator, which blocks component,.
Optionally, it includes shifter and cover board that the crystal oscillator, which blocks component,
The shifter blocks net and the cover board is connect with described, for the shutter to be moved to the opening
Between the crystal oscillator, alternatively, for the net that blocks to be moved between the opening and the crystal oscillator.
Optionally, it includes shutter and driver that the crystal oscillator, which blocks component,
The shutter is connect with the driver, and the driver is used in plated film, and the shutter is driven to move,
To change the area of orthographic projection of the crystal oscillator on the shutter.
Optionally, area of the driver for orthographic projection of the crystal oscillator on the shutter described in periodically-varied.
Optionally, the driver includes rotation axis, and the rotation axis is connect with the shutter.
Optionally, the shutter is semicircle shutter, the center of circle company of the rotation axis and the semicircle shutter
It connects.
A kind of film monitoring method provided according to embodiments of the present invention is used for film monitoring device, the film monitoring
Device includes: that shell, crystal oscillator, crystal oscillator block component and crystal oscillator monitoring assembly；The crystal oscillator and the crystal oscillator block component and are located at
In the shell, opening is provided on the shell, the crystal oscillator blocks component and is located between the opening and the crystal oscillator,
The described method includes:
When carrying out plated film, the crystal oscillator is driven to vibrate by the crystal oscillator monitoring assembly；
The membrane material steam for reducing and contacting with the crystal oscillator is blocked by the component that blocks；
The vibration frequency of the crystal oscillator is monitored by the crystal oscillator monitoring assembly.
Optionally, it includes shutter and driver that the crystal oscillator, which blocks component, and the shutter is connect with the driver,
The driver is used in plated film, drives the shutter to move, to change positive throwing of the crystal oscillator on the shutter
The area of shadow
It is described that the membrane material steam for reducing and contacting with the crystal oscillator is blocked by the component that blocks, comprising:
The shutter movement is driven by the driver, to change orthographic projection of the crystal oscillator on the shutter
Area.
Optionally, the vibration frequency that the crystal oscillator is monitored by the crystal oscillator monitoring assembly, comprising:
The slip for the membrane material steam that component pair is contacted with the crystal oscillator is blocked described in determination；
Filming parameter is determined according to the slip of the membrane material steam and the vibration frequency.
Technical solution bring beneficial effect provided in an embodiment of the present invention includes at least:
By blocking component when carrying out plated film between crystal oscillator and the opening of shell, shield portions membrane material steam with
The membrane material steam contacted with crystal oscillator is reduced, the deposition velocity of the film on crystal oscillator is thereby reduced.It solves thin in the related technology
The service life of film monitoring device shorter problem.The service life for improving film monitoring device is achieved the effect that.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of schematic diagram of implementation environment involved in the embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of film monitoring device shown in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another film monitoring device provided in an embodiment of the present invention；
Fig. 4 is the present invention looks up structural representation that a kind of crystal oscillator blocks component in film monitoring device shown in Fig. 3；
Fig. 5 is the structural schematic diagram of another film monitoring device provided in an embodiment of the present invention；
Fig. 6 is a kind of present invention looks up structural representation of shutter in film monitoring device shown in fig. 5；
Fig. 7 is a kind of flow chart of film monitoring method provided in an embodiment of the present invention；
Fig. 8 is the flow chart of another film monitoring method provided in an embodiment of the present invention.
Through the above attached drawings, it has been shown that the specific embodiment of the present invention will be hereinafter described in more detail.These attached drawings
It is not intended to limit the scope of the inventive concept in any manner with verbal description, but is by referring to specific embodiments
Those skilled in the art illustrate idea of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of schematic diagram of implementation environment involved in the embodiment of the present invention.The implementation environment may include vapor deposition
Device 10 and film monitoring device 20.
Evaporation coating device 10 may include vapor deposition chamber 11, crucible 12 and membrane to be plated 13.
For crucible 11 for storing and heating thin-film material, making thin-film material gasification is membrane material steam.Crucible 11 is located at vapor deposition
In chamber 11.Heater strip has can be set in crucible 11, which can heat thin-film material.
Membrane 13 to be plated is the device for needing plated film, and membrane 13 to be plated is located in vapor deposition chamber 11, and is usually located at crucible
11 tops, in order to which membrane material steam can be deposited in membrane 13 to be plated.Membrane 13 to be plated may include various substrates.Vapor deposition
When, membrane 13 to be plated can be by rotating the uniformity of the thickness of film plating layer to improve.
Film monitoring device 20 can be located in vapor deposition chamber 11, and top (surface or the biasing of crucible 12 is arranged in
In the top of crucible 12), in order to be able to accurately monitor coating speed.Film monitoring device 20 may include crystal oscillator 21 and shell
Body 22, crystal oscillator 21 are located in shell 22.Crystal oscillator 21 can be vibrated under the driving of film monitoring device 20 with assigned frequency.Work as film
Material steam touches crystal oscillator 21 and on crystal oscillator 21 after deposition film forming, can impact to the vibration frequency of crystal oscillator 21 (as reduced
The vibration frequency of crystal oscillator), usually plated film can be determined according to the variation degree of the vibration frequency of the crystal oscillator 21 at two time points
Speed (variation is bigger, then coating speed is higher, and the variation is smaller, then coating speed is also smaller).
The coating speed that film monitoring device 20 is monitored can consider to be into the coating speed in membrane 13 to be plated
Ratio (ratio can be described as tool coefficient (English: Tooling Factor)) is relevant.That is to say can be monitored by film
Device 20 obtains the coating speed that evaporation coating device 10 treats film-coated part 13.
The implementation environment can be used for Organic Light Emitting Diode (English: Organic Light-Emitting Diode；Letter
Claim: OLED) display panel manufacture in.For example, can be used for that luminous organic material is deposited.
But if continuous deposition film layer, the thickness of the film layer can be more than quickly on crystal oscillator 21 in film monitoring device 20
The maximum gauge that crystal oscillator 21 can carry (after being greater than the thickness, crystal oscillator can be difficult to operate normally).Lead to film monitoring device 20
Service life it is lower.This to need frequent open that chamber is deposited to replace film monitoring device, or replacement film prison when plated film
The crystal oscillator in device is surveyed, and then causes the plating membrane efficiency of evaporation coating device lower.
And the embodiment of the invention provides a kind of film monitoring device and film monitoring methods, and film monitoring dress can be improved
The service life set, and then improve the plating membrane efficiency of evaporation coating device.
Fig. 2 is a kind of structural schematic diagram of film monitoring device shown in the embodiment of the present invention.The film monitoring device can
Think the film monitoring device in implementation environment shown in FIG. 1.The film monitoring device 20 may include:
Shell 22, crystal oscillator 21, crystal oscillator block component 23 and crystal oscillator monitoring assembly 24.
Crystal oscillator 21 and crystal oscillator block component 23 and are located in shell 22, and opening k is provided on shell 22, and crystal oscillator blocks component 23
Between opening k and crystal oscillator 21, crystal oscillator blocks component 23 and steams for when carrying out plated film, reducing the membrane material contacted with crystal oscillator 21
Vapour.
Crystal oscillator monitoring assembly 24 is connect with crystal oscillator 21.
Crystal oscillator monitoring assembly 24 can be used for that crystal oscillator 21 is driven to vibrate, and monitor the vibration frequency of crystal oscillator 21.
Wherein, crystal oscillator 21 can be crystal-vibration-chip.
In conclusion film monitoring device provided in an embodiment of the present invention, by between crystal oscillator and the opening of shell
Block component when carrying out plated film, shield portions membrane material steam is thereby reduced with reducing the membrane material steam contacted with crystal oscillator
The deposition velocity of film on crystal oscillator.Solve the problems, such as that the service life of film monitoring device in the related technology is shorter.Reach and has mentioned
The effect in the service life of high film monitoring device.
Fig. 3 is the structural schematic diagram of another film monitoring device provided in an embodiment of the present invention.The film monitoring device
20 can be the film monitoring device in implementation environment shown in FIG. 1.
It may include two schemes that crystal oscillator provided in an embodiment of the present invention, which blocks component:
The first scheme, it includes blocking net 231 that crystal oscillator, which blocks component,.
This is blocked net 231 and to reduce the membrane material steam contacted with crystal oscillator 21, and then can be reduced with shield portions membrane material steam
The deposition velocity of film on crystal oscillator 21.
After crystal oscillator 21 is blocked by blocking net 231, net can be blocked according to the area determination for blocking the blocked crystal oscillator of net 231
For the reduction degree of the deposition velocity of the film on crystal oscillator, so extrapolate block it is thin on crystal oscillator 21 when net 231 does not block
The deposition velocity of film.Illustratively, the area that net 231 has blocked crystal oscillator 21 percent 50 is blocked, it may be considered that blocking net 231
Reduce the deposition velocity of the film of half on crystal oscillator 21.If being obtained on crystal oscillator 21 according to the frequency variation degree of crystal oscillator 21 at this time
Coating speed be A, then can extrapolate when blocking net 231 and not blocking, the deposition velocity of the film on crystal oscillator 21 is 2A.
Wherein, blocking net 231 can be made of relatively stable material, fill so that blocking net 231 and will not monitor to film
Other assemblies in setting impact.Blocking the parameters such as the sizing grid of net 231 can be arranged according to the parameter of thin-film material.
As needed biggish coating speed in thin-film material design, then the size of grid can be smaller, as needed in thin-film material design
Lesser coating speed, then the size of grid can be larger.
Film monitoring device provided in an embodiment of the present invention can adjust crystalline substance by adjusting the size for the grid for blocking net
The deposition velocity of film in vibration 21, it is larger to avoid the excessively slow caused velocity perturbation of deposition velocity of film on crystal oscillator 21, into
And the problem for causing the monitoring result accuracy of coating speed poor.
Optionally, it includes shifter 232 and cover board 233 that crystal oscillator, which blocks component,.
Shifter 232 with block net 231 and cover board 233 is connect, for cover board 233 to be moved to opening k and crystal oscillator 21
Between, alternatively, being moved between opening k and crystal oscillator 21 for net 231 will to be blocked.Cover board 233 can film monitoring device not
When operation, crystal oscillator 21 is blocked, to protect crystal oscillator 21.
The shifter 232 can be a rotating bar, and one end of the rotating bar is connect with shell, can will be covered by rotation
Plate 233 or block net 231 be moved to opening k and crystal oscillator 21 between.
Optionally, it includes bracket 234 that crystal oscillator, which blocks component, and bracket 234 is plate-like, and through-hole t is provided on bracket 234,
Opening k and crystal oscillator 21 can be located in through-hole t in the orthographic projection on bracket 234.And block net 231 and cover board 233 blocks
Through-hole t, it can achieve the effect that block crystal oscillator 21.Bracket 232 can overflow to avoid the membrane material steam in other regions is scattered to crystalline substance
In vibration.
Fig. 3 shows that bracket 234 is located at and blocks side of the net 231 far from crystal oscillator 21, but bracket 234 can also be located at screening
Backstop 231 is not limited close to the side of crystal oscillator 21, the embodiment of the present invention.
Optionally, film monitoring device can also include pedestal g, and crystal oscillator 21 can be set in pedestal g, on pedestal g
It is provided with opening, crystal oscillator g exposes in the opening.
As shown in figure 4, it is in film monitoring device shown in Fig. 3, what a kind of crystal oscillator blocked component looks up structural representation
Figure.Through-hole on bracket 234 can be circle, and the circular through-hole can be covered by blocking net 231.Membrane material steam is floating towards crystal oscillator
When 21, this, which blocks net 231, to float towards crystal oscillator 21 with stop portions membrane material steam.Cover board 233 is not shown in Fig. 4, but not to this into
Row limitation.
Second scheme, it includes shutter 235 and driver 236 that crystal oscillator, which blocks component,.
As shown in figure 5, its structural schematic diagram for another film monitoring device 20 provided in an embodiment of the present invention.
Shutter 235 is connect with driver 236, and driver 236 is used in plated film, and driving shutter 235 moves, to change
The area of orthographic projection of the metacrystal vibration on shutter 235.It that is to say that shutter 235, can be continuous under the driving of driver 236
Ground changes the area of the crystal oscillator blocked.The deposition velocity that so can equally reduce the film on crystal oscillator 21, improves the longevity of crystal oscillator
Life.And then the frequency of replacement crystal oscillator or film monitoring device can be reduced, improve the plating membrane efficiency of evaporation coating device.
Optionally, driver 236 is used for the area of orthographic projection of the periodically-varied crystal oscillator 21 on shutter 235.Namely
It is that shutter 235 periodically can block crystal oscillator 21 with certain rule under the driving of driver 236, it so can be just
In extrapolating coating speed according to the vibration frequency of crystal oscillator 21.
Exemplary, the period is 3 seconds, then in each period, shutter 235 can be 1 second with the time for blocking crystal oscillator, no
The time for blocking crystal oscillator can be 2 seconds.I.e. shutter has blocked 1/3 period of crystal oscillator, it may be considered that shutter blocks 1/3
Membrane material vapor deposition that is to say that coating speed reduces 1/3, can so be obtained according to algorithm in the related technology on crystal oscillator
To after coating speed, 3 times of the coating speed are the coating speed of film layer when not having shutter, deposited on crystal oscillator.
Film monitoring device provided in an embodiment of the present invention can adjust the film on crystal oscillator 21 by driver 236
Deposition velocity, to avoid film on crystal oscillator 21 deposition velocity it is excessively slow caused by velocity perturbation it is larger, and then cause plated film fast
The poor problem of the monitoring result accuracy of degree.
Optionally, driver 236 includes rotation axis z, and rotation axis z is connect with shutter 235.Rotation axis passes through rotation
To change shutter 235 to the shielded area of crystal oscillator 21.Driver 235 can also include driving mechanism, which can be with
Drive rotation axis z that shutter 235 is driven to rotate.
Optionally, as shown in fig. 6, it is a kind of bottom view of shutter 235 in film monitoring device shown in fig. 5.It hides
Baffle 235 is semicircle shutter, and rotation axis z is connect with the center of circle of semicircle shutter.When the shutter 235 turns to first
When designated position, crystal oscillator 21 the shutter 235 opening k on orthographic projection in the plane and shell 22 on this plane
Orthographic projection be respectively positioned on the shutter 235, that is to say that the shutter 235 can block crystal oscillator 21 completely so that from opening k into
The membrane material steam for entering shell 22 is difficult to be deposited on crystal oscillator 21.And when shutter 235 turns to the second designated position, crystal oscillator
21 the shutter 235 the orthographic projection of opening k on this plane on orthographic projection in the plane and shell 22 not position
In on the shutter 235, that is to say that the shutter 235 can not block crystal oscillator 21, so that entering shell 22 from opening k
Membrane material steam can be deposited on crystal oscillator 21.
Under such structure, 235 uniform rotation of shutter one week can stop the membrane material vapor deposition of half on crystal oscillator,
Facilitate the calculating for coating speed.In addition, shutter 235 can also be other shapes, such as rectangle and sector, the present invention
Embodiment is not limited.
In addition, film monitoring device can also include controller, which can be used for carrying out the calculating of coating speed.
The controller can be connect with crystal oscillator monitoring assembly by wired or wireless mode, to control crystal oscillator monitoring assembly and obtain crystalline substance
The data such as the vibration frequency of vibration monitoring assembly crystal oscillator collected.In addition, the controller can be also used for control film monitoring dress
Other components in setting, such as driver.
The controller can be located in the shell of film monitoring device or outside shell, can also be located at vapor deposition exterior thereto,
Or also may include in crystal oscillator monitoring assembly, the embodiment of the present invention is not limited.
In conclusion film monitoring device provided in an embodiment of the present invention, by between crystal oscillator and the opening of shell
Block component when carrying out plated film, shield portions membrane material steam is thereby reduced with reducing the membrane material steam contacted with crystal oscillator
The deposition velocity of film on crystal oscillator.Solve the problems, such as that the service life of film monitoring device in the related technology is shorter.Reach and has mentioned
The effect in the service life of high film monitoring device.
Fig. 7 is a kind of flow chart of film monitoring method provided in an embodiment of the present invention.The film monitoring method can be used
In film monitoring device provided by the above embodiment, this method may include following several steps:
Step 701, when carrying out plated film, pass through crystal oscillator monitoring assembly drive crystal oscillator vibration.
Step 702 blocks the membrane material steam that reduction is contacted with crystal oscillator by blocking component.
Step 703, the vibration frequency that crystal oscillator is monitored by crystal oscillator monitoring assembly.
In conclusion film monitoring method provided in an embodiment of the present invention, by between crystal oscillator and the opening of shell
Block component when carrying out plated film, shield portions membrane material steam is thereby reduced with reducing the membrane material steam contacted with crystal oscillator
The deposition velocity of film on crystal oscillator.Solve the problems, such as that the service life of film monitoring device in the related technology is shorter.Reach and has mentioned
The effect in the service life of high film monitoring device.
Fig. 8 is the flow chart of another film monitoring method provided in an embodiment of the present invention.The film monitoring method can be with
For film monitoring device provided by the above embodiment, this method may include following several steps:
Step 801, when carrying out plated film, pass through crystal oscillator monitoring assembly drive crystal oscillator vibration.
Film monitoring method provided in an embodiment of the present invention can be applied in film monitoring device controller.The controller
Crystal oscillator can be driven to vibrate with assigned frequency by crystal oscillator monitoring assembly in evaporation coating device plated film.
Step 802 drives shutter movement by driver, to change the area of orthographic projection of the crystal oscillator on shutter.
Controller can drive shutter movement by driver, to change the face of orthographic projection of the crystal oscillator on shutter
Product.
Optionally, controller can drive shutter movement by driver, periodically to change crystal oscillator in shutter
On orthographic projection area.
Step 803, the vibration frequency that crystal oscillator is monitored by crystal oscillator monitoring assembly.
The vibration frequency is vibration frequency under the influence of membrane material vapor deposition is in the film layer on crystal oscillator.
Step 804 determines the slip for blocking the membrane material steam that component pair is contacted with crystal oscillator.
Controller can determine the circumstance of occlusion of crystal oscillator according to shutter the film for blocking component pair and contacting with crystal oscillator
The slip of material steam.Illustratively, the center of circle of semicircle shutter as shown in FIG. 6, rotation axis and semicircle shutter connects
It connects.Under such structure, shutter uniform rotation one week, it can stop the membrane material vapor deposition of half on crystal oscillator, that is to say screening
The slip for the membrane material steam that gear component pair is contacted with crystal oscillator can be 50%.
Step 805 determines filming parameter according to the slip and vibration frequency of membrane material steam.
Controller can change situation according to the vibration of crystal oscillator by calculation in the related technology and obtain on crystal oscillator
Coating speed determines that crystal oscillator blocks the reduction degree of component coating speed further according to the slip of membrane material steam, and basis should later
Coating speed and the reduction degree can obtain not set crystal oscillator when blocking component, the coating speed on crystal oscillator.
In conclusion film monitoring method provided in an embodiment of the present invention, by between crystal oscillator and the opening of shell
Block component when carrying out plated film, shield portions membrane material steam is thereby reduced with reducing the membrane material steam contacted with crystal oscillator
The deposition velocity of film on crystal oscillator.Solve the problems, such as that the service life of film monitoring device in the related technology is shorter.Reach and has mentioned
The effect in the service life of high film monitoring device.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of film monitoring device, which is characterized in that the film monitoring device includes:
Shell, crystal oscillator, crystal oscillator block component and crystal oscillator monitoring assembly；
The crystal oscillator and the crystal oscillator block component and are located in the shell, and opening is provided on the shell, and the crystal oscillator hides
Component is kept off to be located between the opening and the crystal oscillator, the crystal oscillator blocks component for when carrying out plated film, reduction with it is described
The membrane material steam of crystal oscillator contact；
The crystal oscillator monitoring assembly is connect with the crystal oscillator.
2. film monitoring device according to claim 1, which is characterized in that it includes blocking net that the crystal oscillator, which blocks component,.
3. film monitoring device according to claim 2, which is characterized in that the crystal oscillator block component include shifter and
Cover board,
The shifter blocks net and the cover board is connect with described, for the cover board to be moved to the opening and described
Between crystal oscillator, alternatively, for the net that blocks to be moved between the opening and the crystal oscillator.
4. film monitoring device according to claim 1, which is characterized in that the crystal oscillator block component include shutter and
Driver,
The shutter is connect with the driver, and the driver is used in plated film, drives the shutter to move, to change
Become the area of orthographic projection of the crystal oscillator on the shutter.
5. film monitoring device according to claim 4, which is characterized in that the driver is for described in periodically-varied
The area of orthographic projection of the crystal oscillator on the shutter.
6. film monitoring device according to claim 4, which is characterized in that the driver includes rotation axis, and described turn
Moving axis is connect with the shutter.
7. film monitoring device according to claim 5, which is characterized in that the shutter is semicircle shutter, institute
Rotation axis is stated to connect with the center of circle of the semicircle shutter.
8. a kind of film monitoring method, which is characterized in that be used for film monitoring device, the film monitoring device include: shell,
Crystal oscillator, crystal oscillator block component and crystal oscillator monitoring assembly；The crystal oscillator and the crystal oscillator block component and are located in the shell, described
Opening is provided on shell, the crystal oscillator blocks component and is located between the opening and the crystal oscillator,
The described method includes:
When carrying out plated film, the crystal oscillator is driven to vibrate by the crystal oscillator monitoring assembly；
The membrane material steam for reducing and contacting with the crystal oscillator is blocked by the component that blocks；
The vibration frequency of the crystal oscillator is monitored by the crystal oscillator monitoring assembly.
9. according to the method described in claim 8, it is characterized in that, it includes shutter and driver that the crystal oscillator, which blocks component,
The shutter is connect with the driver, and the driver is used in plated film, drives the shutter to move, to change
State the area of orthographic projection of the crystal oscillator on the shutter
It is described that the membrane material steam for reducing and contacting with the crystal oscillator is blocked by the component that blocks, comprising:
The shutter movement is driven by the driver, to change the face of orthographic projection of the crystal oscillator on the shutter
Product.
10. according to the method described in claim 8, it is characterized in that, described monitor the crystalline substance by the crystal oscillator monitoring assembly
After the vibration frequency of vibration, the method also includes:
The slip for the membrane material steam that component pair is contacted with the crystal oscillator is blocked described in determination；
Filming parameter is determined according to the slip of the membrane material steam and the vibration frequency.
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| CN201910002342.XA CN109440078B (en) | 2019-01-02 | 2019-01-02 | Thin film monitoring device and thin film monitoring method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257791A (en) * | 2019-04-29 | 2019-09-20 | 昆山国显光电有限公司 | Rate monitoring device, evaporated device and evaporation coating method |
| CN110835742A (en) * | 2019-10-30 | 2020-02-25 | 深圳市华星光电半导体显示技术有限公司 | Crystal probe shade device |
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| CN110257791A (en) * | 2019-04-29 | 2019-09-20 | 昆山国显光电有限公司 | Rate monitoring device, evaporated device and evaporation coating method |
| CN110257791B (en) * | 2019-04-29 | 2021-07-20 | 昆山国显光电有限公司 | Speed monitoring device, evaporation equipment and evaporation method |
| CN110835742A (en) * | 2019-10-30 | 2020-02-25 | 深圳市华星光电半导体显示技术有限公司 | Crystal probe shade device |
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