CN105177520B

CN105177520B - Thickness actuator and manufacture method, control method, evaporated device

Info

Publication number: CN105177520B
Application number: CN201510475626.2A
Authority: CN
Inventors: 李晓虎; 孙中元
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2015-08-05
Filing date: 2015-08-05
Publication date: 2016-06-08
Anticipated expiration: 2035-08-05
Also published as: CN105177520A; US9930787B2; US20170037507A1

Abstract

Disclosure one thickness actuator and manufacture method, control method, evaporated device, belong to evaporation coating technique field. Thickness actuator includes: framework and at least two can deformation thin film, at least two can be arranged on lower portion by deformation thin film, and at least two can the face of deformation thin film parallel, at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film; To at least two can any two in deformation thin film can the conductive structure on deformation thin film apply voltage time, due to the attraction between conductive structure or repulsion, any two is driven to move by deformation thin film, make any two can deformation thin film via relative position change, the invention solves the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, having reached the effect of the homogeneity of the thickness improving evaporation film, the present invention is used for being deposited with.

Description

Thickness actuator and manufacture method, control method, evaporated device

Technical field

The present invention relates to evaporation coating technique field, particularly to a kind of thickness actuator and manufacture method, control method, evaporated device.

Background technology

Organic Light Emitting Diode (English: OrganicLight-EmittingDiode, it is called for short: OLED) display device is owing to having multiple advantage, is increasingly subject to the concern of people. OLED display device generally includes: anode layer, functional film layer, cathode layer etc., wherein, functional film layer may include that hole transmission layer, organic luminous layer and electron transfer layer etc., and the film build method of organic luminous layer may include that evaporation film-forming method, molecular beam epitaxy, organic chemical vapor deposition method and dissolving-gel method etc.; Evaporation film-forming method has the advantages such as simple to operate, thickness is easily controllable, has become as the main method forming the functional film layer such as organic luminous layer.

The film that evaporation film-forming method is formed is properly termed as evaporation film, and the thickness difference of evaporation film can cause that the luminosity of OLED display device there are differences, and affects display effect and the service life of OLED display device. evaporation film-forming method generally adopts evaporated device to form evaporation film, illustratively, as shown in Figure 1, it is illustrated that the structural representation of a kind of evaporated device 00 that correlation technique provides, evaporated device 00 includes: evaporation chamber 001, it is arranged on evaporation evaporation source 002 within chamber 001, it is arranged on the inwall of evaporation chamber 001 and is positioned at the thickness detector 003 above evaporation source 002, it is arranged on evaporation chamber 001 inside and is positioned at the switch 004 above thickness detector 003, it is arranged on evaporation chamber 001 internal for supporting the substrate bracing frame 005 treating plated substrate A, it is arranged on evaporation chamber 001 internal for supporting the mask plate bracing frame 006 of mask plate B, and it is arranged on evaporation motor 007 outside chamber 001, this motor 007 is by being connected with substrate bracing frame 005 and mask plate bracing frame 006 respectively through the power transmission shaft 008 of the cavity wall of evaporation chamber 001, wherein, evaporation source 002 can be point-like evaporation source, mask plate B is arranged on and treats the plated substrate A side near evaporation source 002.When adopting this evaporated device 00 to form evaporation film, heating evaporation source 002 makes evaporation source 002 evaporate the deposition material molecule of gasification, the sedimentation rate of this deposition material molecule can be detected by thickness detector 003, when the sedimentation rate of deposition material molecule reaches targeted rate, open switch 004 and motor 007, motor 007 drives substrate bracing frame 005 and mask plate bracing frame 006 to rotate by power transmission shaft 008, and then make to treat that plated substrate A and mask plate B rotates, deposition material molecule is evaporated by mask plate B and deposits to be treated to form evaporation film on plated substrate A.

In the process realizing the present invention, inventor have found that correlation technique at least there is problems in that the restriction by point-like evaporation source and the structure of substrate, deposition material molecule there are differences in the sedimentation rate of the various location of substrate, easily there is the phenomenon that center thick rim is thin in the evaporation film formed, therefore, the homogeneity of the thickness being deposited with film is poor.

Summary of the invention

The problem that homogeneity in order to solve to be deposited with in correlation technique the thickness of film is poor, the present invention provides a kind of thickness actuator and manufacture method, control method, evaporated device. Described technical scheme is as follows:

First aspect, it is provided that a kind of thickness actuator, described thickness actuator includes: framework and at least two can deformation thin film,

Described at least two can be arranged on described lower portion by deformation thin film, and described at least two can the face of deformation thin film parallel, described at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film;

To described at least two can any two in deformation thin film can the conductive structure on deformation thin film apply voltage time, due to the attraction between described conductive structure or repulsion, drive described any two to move by deformation thin film, make described any two can deformation thin film via relative position change.

Alternatively, each deformation thin film can be both provided with multiple conductive structures of array arrangement and multiple vias of array arrangement.

Alternatively, each can being additionally provided with a plurality of driving line on deformation thin film, described a plurality of driving line and the plurality of conductive structure connect one to one.

Alternatively, described at least two can in deformation thin film each can the structure of deformation thin film identical.

Alternatively, each can be intervally arranged with described via by the described conductive structure on deformation thin film.

Alternatively, each can the face of deformation thin film be rectangle plane;

Described framework is rectangle frame, described at least two can deformation thin film along the short transverse array arrangement successively of described framework at described lower portion.

Alternatively, each can described conductive structure on deformation thin film and described via can the length direction of deformation thin film be intervally arranged along described; Or,

Each can described conductive structure on deformation thin film and described via can the width of deformation thin film be intervally arranged along described.

Alternatively, described conductive structure and described driving line all adopt metal material to be formed.

Alternatively, described at least two can the number of deformation thin film be 2;

Described via is circular vias or square vias.

Second aspect, it is provided that the manufacture method of a kind of thickness actuator, the manufacture method of described thickness actuator includes:

Manufacture at least two can deformation thin film, described at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film;

Described at least two can be arranged on lower portion by deformation thin film, make described at least two can the face of deformation thin film parallel.

Alternatively, each deformation thin film can be additionally provided with the driving line being connected with described conductive structure, described manufacture at least two can deformation thin film, including:

Underlay substrate is formed thin layer;

The underlay substrate being formed with described thin layer is formed described conductive structure and described driving line, obtain to be formed can deformation thin film;

By described to be formed can peeling off from described underlay substrate by deformation thin film;

Described to be formed can punching on region except described conductive structure and described driving line on deformation thin film, make described to be formed deformation thin film to form described via, obtain first can deformation thin film, described first can deformation thin film be that described at least two can any one in deformation thin film.

Alternatively, described on the underlay substrate being formed with described thin layer, form described conductive structure and described driving line, obtain to be formed can deformation thin film, including:

The underlay substrate being formed with described thin layer sequentially forms metal level and photoresist layer;

After adopting mask plate that the underlay substrate being formed with described photoresist layer is exposed, is developed, forming photoetching offset plate figure, described photoetching offset plate figure includes: district removed completely by photoresist district and photoresist;

Adopt etching technics, remove described photoresist and remove the metal level that district is corresponding completely;

Peel off the photoresist in described photoresist district, make region corresponding with described photoresist district on described metal level form described conductive structure and described driving line, obtain described to be formed can deformation thin film.

The underlay substrate being formed with described thin layer is pasted described conductive structure and described driving line, obtain described to be formed can deformation thin film.

Alternatively, the described thin layer that formed on underlay substrate includes:

Described underlay substrate is coated with one layer of deformable material, obtains described thin layer;

Or,

Described underlay substrate is pasted the thin film adopting deformable material to be formed, obtains described thin layer.

Alternatively, described described to be formed can punching on region except described conductive structure and described driving line on deformation thin film, including:

The mode of laser boring is adopted to be formed can deformation thin film to punch on region except described conductive structure and described driving line except described;

Or,

The mode of mechanical punching is adopted to be formed can deformation thin film to punch on region except described conductive structure and described driving line except described.

Alternatively, each can the face of deformation thin film be rectangle plane, and described framework is rectangle frame,

Described described at least two can be arranged on lower portion by deformation thin film, make described at least two can the face of deformation thin film parallel, including:

Described at least two can be arranged on described lower portion by deformation thin film, make described at least two can deformation thin film along the short transverse array arrangement successively of described framework at described lower portion, and described at least two can the face of deformation thin film parallel.

The third aspect, it is provided that the control method of a kind of thickness actuator, the control method of described thickness actuator includes:

Any two in deformation thin film voltage can be applied by the conductive structure on deformation thin film at least two, described conductive structure is made to attract each other or repel, driving described any two to move by deformation thin film, described any two can the relative position of via on deformation thin film change.

Alternatively, each multiple conductive structures of array arrangement and multiple vias of array arrangement of can being both provided with on deformation thin film, each deformation thin film can be additionally provided with a plurality of driving line, described a plurality of driving line and the plurality of conductive structure connect one to one,

Described any two in deformation thin film can apply voltage by the conductive structure on deformation thin film at least two, including:

By any two two described in alignment that drives that is connected of the conductive structure on deformation thin film voltage can be applied by the conductive structure on deformation thin film with described any two.

Alternatively, described any two in deformation thin film can apply voltage by the conductive structure on deformation thin film at least two, described conductive structure is made to attract each other or repel, described any two is driven to move by deformation thin film, described any two can the relative position of via on deformation thin film change, including:

Any two in deformation thin film the voltage that direction is identical can be applied by the conductive structure on deformation thin film to described at least two, make described any two can conductive structure on deformation thin film mutually exclusive, driving described any two the neighboring area of described conductive structure on deformation thin film to be located remotely from each other, described any two can the relative position of via on deformation thin film change;

Or,

Any two in deformation thin film voltage in opposite direction can be applied by the conductive structure on deformation thin film to described at least two, described any two is made to attract each other by the conductive structure on deformation thin film, drive described any two can the neighboring area of described conductive structure on deformation thin film close to each other, described any two can the relative position of via on deformation thin film change.

Fourth aspect, it is provided that a kind of evaporated device, described evaporated device includes: the thickness actuator described in arbitrary optional mode of first aspect or first aspect.

Alternatively, described evaporated device also includes: is deposited with chamber, is arranged on the evaporation source of described evaporation chamber interior, is arranged on the inwall of described evaporation chamber and is positioned at the thickness detector above described evaporation source, be arranged on described evaporation chamber interior and be positioned at the switch above described thickness detector, be arranged on the first bracing frame and second bracing frame of described evaporation chamber interior, and it is arranged on the motor of described evaporation exterior thereto

Described first bracing frame and described second bracing frame are connected with described motor respectively through the power transmission shaft of the cavity wall through described evaporation chamber, and described first bracing frame is used for support and treats plated substrate, and described second bracing frame is used for supporting mask plate;

Described thickness actuator is fixedly installed on described evaporation chamber interior, and it is positioned at the top of described switch, the lower section of described second bracing frame, described thickness actuator for by regulate described thickness actuator at least two can any two in deformation thin film can the relative position of via on deformation thin film, regulate deposition material molecule in the described sedimentation rate treated on plated substrate.

Technical scheme provided by the invention has the benefit that

Thickness actuator provided by the invention and manufacture method, control method, evaporated device, thickness actuator includes: framework and at least two can deformation thin film, at least two can be arranged on lower portion by deformation thin film, and at least two can the face of deformation thin film parallel, at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film;To at least two can any two in deformation thin film can the conductive structure on deformation thin film apply voltage time, due to the attraction between conductive structure or repulsion, drive any two can move by deformation thin film, make any two can deformation thin film via relative position change. Any two can deformation thin film via relative position change time, the amount of deposition material by via can be regulated, and then regulate deposition material treating the sedimentation rate of diverse location on plated substrate, make to treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous, solve the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, reach the effect of the homogeneity of the thickness improving evaporation film.

It should be appreciated that above general description and details hereinafter describe and be merely illustrative of, the present invention can not be limited.

Accompanying drawing explanation

In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, below the accompanying drawing used required during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.

Fig. 1 is the structural representation of a kind of evaporated device that correlation technique provides;

Fig. 2 is the structural representation of a kind of thickness actuator that one embodiment of the invention provides;

Fig. 3-1 is the structural representation of a kind of thickness actuator that another embodiment of the present invention provides;

Fig. 3-2 applies the structural representation after voltage to what Fig. 3-1 illustrated embodiment provided to the conductive structure of thickness actuator;

Fig. 3-3 is the top view of the thickness actuator provided to Fig. 3-1 illustrated embodiment;

Fig. 4 is the method flow diagram of the manufacture method of a kind of thickness actuator that one embodiment of the invention provides;

Fig. 5-1 is the method flow diagram of the manufacture method of a kind of thickness actuator that another embodiment of the present invention provides;

Fig. 5-2 be that the embodiment of the present invention provides a kind of can the top view of deformation thin film;

Fig. 5-3 be shown in Fig. 5-2 can the profile at deformation thin film C-C position;

Fig. 5-4 be that Fig. 5-1 illustrated embodiment provides a kind of can the method flow diagram of manufacture method of deformation thin film;

Fig. 5-5 is the structural representation on underlay substrate after formation thin layer that Fig. 5-1 illustrated embodiment provides;

Fig. 5-6 is formation conductive structure on the underlay substrate be formed with thin layer and the structural representation after driving line of Fig. 5-1 illustrated embodiment offer;

Fig. 5-7 is the top view of Fig. 5-6;

Fig. 5-8 is a kind of method flow diagram forming conductive structure and driving line on the underlay substrate be formed with thin layer that Fig. 5-1 illustrated embodiment provides;

Fig. 5-9 is the structural representation sequentially formed on the underlay substrate be formed with thin layer after metal level and photoresist layer that Fig. 5-1 illustrated embodiment provides;

Fig. 5-10 be Fig. 5-1 illustrated embodiment provide the underlay substrate being formed with photoresist layer is exposed, develops after structural representation;

Fig. 5-11 is the structural representation after the metal level that district is corresponding removed completely by the removal photoresist that Fig. 5-1 illustrated embodiment provides;

Fig. 5-12 is the structural representation after the photoresist in the stripping photoresist district that Fig. 5-1 illustrated embodiment provides;

Fig. 5-13 is that the another kind that Fig. 5-1 illustrated embodiment provides forms conductive structure on the underlay substrate be formed with thin layer and drives the method flow diagram of line;

Fig. 5-14 be Fig. 5-1 illustrated embodiment provide by be formed can deformation thin film from the structural representation after peeling off underlay substrate;

Fig. 5-15 be Fig. 5-1 illustrated embodiment provide to be formed can structural representation after deformation film perforating;

Fig. 6 is the method flow diagram of the control method of a kind of thickness actuator that one embodiment of the invention provides;

Fig. 7 is the structural representation of a kind of evaporated device that one embodiment of the invention provides;

Fig. 8 is the fundamental diagram of a kind of evaporated device that one embodiment of the invention provides.

Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meets embodiments of the invention, and is used for explaining principles of the invention together with description.

Detailed description of the invention

In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, it is clear that described embodiment is only some embodiments of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, all other embodiments that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.

Refer to Fig. 2, it illustrates the structural representation of a kind of thickness actuator 10 that one embodiment of the invention provides, this thickness actuator 10 can be arranged in evaporated device the homogeneity regulating evaporation film thickness, referring to Fig. 2, this thickness actuator 10 includes: framework 110 and at least two can deformation thin film 120.

At least two can be arranged on framework 110 inside by deformation thin film 120, and at least two can the face of deformation thin film 120 parallel, at least two each in deformation thin film 120 can be both provided with conductive structure 121 and the via 122 for deposition material molecule traverse on deformation thin film 120.

To at least two can any two in deformation thin film 120 can the conductive structure 121 on deformation thin film 120 apply voltage time, due to the attraction between conductive structure 121 or repulsion, drive any two can move by deformation thin film 120, make any two can deformation thin film 120 via 122 relative position change.

In sum, the thickness actuator that the embodiment of the present invention provides, thickness actuator includes: framework and at least two can deformation thin film, at least two can deformation film parallel, and each deformation thin film can be both provided with conductive structure and via, by voltage can be applied by the conductive structure on deformation thin film to any two, make to attract between conductive structure or repel, any two is driven to move by deformation thin film, any two can deformation thin film via relative position change, when the relative position of via changes, the amount of deposition material by via can be regulated, and then regulate deposition material treating the sedimentation rate of diverse location on plated substrate, make to treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous, solve the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, reach the effect of the homogeneity of the thickness improving evaporation film.

Refer to Fig. 3-1, it illustrates the structural representation of a kind of thickness actuator 10 that another embodiment of the present invention provides, this thickness actuator 10 can be arranged in evaporated device the homogeneity regulating evaporation film thickness, referring to Fig. 3-1, this thickness actuator 10 includes: framework 110 and at least two can deformation thin film 120. Wherein, the present embodiment can illustrate by deformation thin film for two by deformation thin film 120 at least two.

Illustratively, refer to Fig. 3-2, it is illustrated that the structural representation of the thickness actuator 10 after applying voltage to conductive structure 121, referring to Fig. 3-2, after applying voltage to conductive structure 121, conductive structure 121 attracts each other or repels so that any two can deformation thin film 120 via 122 relative position change. Specifically, to any two can after the conductive structure 121 on deformation thin film 120 applies the voltage that direction is identical, mutually exclusive between conductive structure 121 so that any two can the relative position of via 122 of deformation thin film 120 change; After conductive structure 121 on deformation thin film 120 applies the voltage that direction is identical, can attract each other between conductive structure 121 to any two so that any two can the relative position of via 122 of deformation thin film 120 change.

Alternatively, please continue to refer to Fig. 3-1, each deformation thin film 120 can be both provided with multiple conductive structures 121 of array arrangement and multiple vias 122 of array arrangement.

Alternatively, each deformation thin film 120 can be additionally provided with a plurality of driving line (being not drawn in Fig. 3-1), a plurality of driving line and multiple conductive structures 121 connect one to one, and that is to say, each line can be driven to be connected with one by each conductive structure 121 on deformation thin film 120. Wherein, drive line for applying voltage to the conductive structure 121 driving line to connect one to one, that is, in practical application, when applying voltage to conductive structure 121, it is possible to line will be driven to be connected with external circuitry, and then realize conductive structure 121 is applied voltage. A plurality of driving line and multiple conductive structures 121 connect one to one, make it possible to apply different voltage to each conductive structure 121, make any two can the change of relative position of via 122 of deformation thin film 120 can be different, and then make the amount of the deposition material by each via 122 can be identical, deposition material is treating that on plated substrate, the sedimentation rate of diverse location can be identical so that treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous.

Alternatively, at least two can in deformation thin film 120 each can the structure of deformation thin film 120 identical. Each can be intervally arranged with via 122 by the conductive structure 121 on deformation thin film 120. Wherein, conductive structure 121 and via 122 are intervally arranged, mutually exclusive at conductive structure 121 or attract time, can effectively change two can the relative position of the via 122 adjacent with conductive structure 121 on deformation thin film 120, it is achieved amount and deposition material to the deposition material by each via 122 are treating effective adjustment of the sedimentation rate of diverse location on plated substrate.

Alternatively, each can the face of deformation thin film 120 be rectangle plane; Framework 110 is rectangle frame, and the upper surface of framework 110 be with can the identical rectangle of the face of deformation thin film 120. As shown in figure 3-1, at least two can deformation thin film 120 along the short transverse y array arrangement successively of framework 110 inside framework 110, wherein, when being arranged in evaporated device by framework 110, the short transverse y of this framework 110 is parallel with the short transverse of evaporated device. Alternatively, when can the face of deformation thin film 120 be rectangle plane time, each can conductive structure 121 on deformation thin film 120 and via 122 along can the length direction x of deformation thin film be intervally arranged;Or, each can conductive structure 121 on deformation thin film 120 and via 122 along can the width (being not drawn in Fig. 3-1) of deformation thin film 120 be intervally arranged.

Alternatively, conductive structure 121 and driving line all adopt metal material to be formed. Such as, conductive structure 121 and driving line all can be adopted deposition metal and be formed by patterning processes; Again such as, conductive structure 121 and driving line all can adopt the form of stickup to be formed, i.e. can paste metal derby as conductive structure 121 on deformation thin film 120 each, paste metal wire as driving line.

Alternatively, as shown in figure 3-1, at least two can the number of deformation thin film 120 be 2; Via 122 can be circular vias or square vias, and this is not limited by the embodiment of the present invention.

Refer to Fig. 3-3, it is illustrated that the top view of thickness actuator 10 that Fig. 3-1 illustrated embodiment provides, wherein, framework can be rectangular frame, can deformation thin film 120 can be rectangular film, and can the face of deformation thin film can be identical with the upper surface of framework, therefore, Fig. 3-3 is not drawn into framework, referring to Fig. 3-3, can deformation thin film 120 be rectangular film, and can the length direction of deformation thin film 120 be x, width is z, deformation thin film 120 can be provided with multiple conductive structures 121 of array arrangement and multiple vias 122 of array arrangement, and the driving line 123 connected one to one with multiple conductive structures 121, conductive structure 121 and driving line 123 all adopt metal material to be formed, drive line 123 for applying voltage to the conductive structure 121 driving line 123 to connect one to one. wherein, as shown in Fig. 3-3, can conductive structure 121 on deformation thin film 120 and via 122 along can the length direction x of deformation thin film be intervally arranged. it should be noted that, the present embodiment is for conductive structure 121 and via 122 along the length direction x of deformation thin film 120 can being intervally arranged and illustrate, in practical application, conductive structure 121 and via 122 can also along can the width z of deformation thin film 120 be intervally arranged, or, conductive structure 121 and via 122 are intervally arranged, and this is not limited by the present embodiment. it should be noted that Fig. 3-3 illustrates for via 122 for circular vias, in practical application, via 122 can also be the via of square vias or other shapes, and this is not limited by the embodiment of the present invention.

The thickness actuator that the embodiment of the present invention provides can apply to method hereafter, and in the embodiment of the present invention, the manufacture method of thickness actuator and control method may refer to the description in hereafter each embodiment.

Refer to Fig. 4, it illustrates the method flow diagram of the manufacture method of a kind of thickness actuator that one embodiment of the invention provides, the manufacture method of this thickness actuator may be used for manufacturing the thickness actuator 10 shown in Fig. 2 or Fig. 3-1, referring to Fig. 4, the manufacture method of this thickness actuator can include following several step:

In step 401, manufacture at least two can deformation thin film, at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film.

In step 402, at least two can be arranged on lower portion by deformation thin film, make at least two can the face of deformation thin film parallel.

In sum, the manufacture method of the thickness actuator that the embodiment of the present invention provides, can deformation thin film by manufacturing at least two, each deformation thin film can be both provided with conductive structure and via, at least two can be arranged on lower portion by deformation thin film, make at least two can the face of deformation thin film parallel. due to any two can the conductive structure on deformation thin film apply voltage time, attract between conductive structure or repel, any two is driven to move by deformation thin film, any two can deformation thin film via relative position change, when the relative position of via changes, the amount of deposition material by via can be regulated, and then regulate deposition material treating the sedimentation rate of diverse location on plated substrate, make to treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous, solve the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, reach the effect of the homogeneity of the thickness improving evaporation film.

Alternatively, each can being additionally provided with, on deformation thin film, the driving line being connected with conductive structure, step 401 may include that

Underlay substrate is formed thin layer;

The underlay substrate be formed with thin layer is formed conductive structure and drives line, obtain to be formed can deformation thin film;

To be formed can be peeled off by deformation thin film from underlay substrate;

Can, except conductive structure with drive punching on the region except line on deformation thin film, make to be formed deformation thin film to form via to be formed, obtain first can deformation thin film, first can deformation thin film be that at least two can any one in deformation thin film.

Alternatively, the underlay substrate be formed with thin layer is formed conductive structure and drives line, obtain to be formed can deformation thin film, including:

The underlay substrate be formed with thin layer sequentially forms metal level and photoresist layer;

After adopting mask plate that the underlay substrate being formed with photoresist layer is exposed, is developed, forming photoetching offset plate figure, photoetching offset plate figure includes: district removed completely by photoresist district and photoresist;

Adopt etching technics, remove photoresist and remove the metal level that district is corresponding completely;

The photoresist in stripping photoresist district, makes region corresponding with photoresist district on metal level form conductive structure and driving line, obtain to be formed can deformation thin film.

The underlay substrate be formed with thin layer is pasted conductive structure and drives line, obtain to be formed can deformation thin film.

Alternatively, underlay substrate forms thin layer to include:

Underlay substrate is coated with one layer of deformable material, obtains thin layer;

Or,

Underlay substrate is pasted the thin film adopting deformable material to be formed, obtains thin layer.

Alternatively, to be formed can except conductive structure with drive punching on the region except line on deformation thin film, including:

Adopt the mode of laser boring to be formed can except conductive structure and driving punches on the region except line on deformation thin film;

Or,

Adopt the mode of mechanical punching to be formed can except conductive structure and driving punches on the region except line on deformation thin film.

Alternatively, each can the face of deformation thin film be rectangle plane, and framework is rectangle frame, and step 402 may include that

At least two can be arranged on lower portion by deformation thin film, make at least two can deformation thin film along the short transverse array arrangement successively of framework at lower portion, and at least two can the face of deformation thin film parallel.

Above-mentioned all optional technical schemes, it is possible to adopting and arbitrarily combine formation optional embodiment of the present invention, this is no longer going to repeat them.

Refer to Fig. 5-1, it illustrates the method flow diagram of the manufacture method of a kind of thickness actuator that another embodiment of the present invention provides, the manufacture method of this thickness actuator may be used for manufacturing the thickness actuator 10 shown in Fig. 2 or Fig. 3-1, referring to Fig. 5-1, the manufacture method of this thickness actuator can include following several step:

In step 501, manufacture at least two can deformation thin film, at least two each in deformation thin film can be both provided with conductive structure and the via for deposition material molecule traverse on deformation thin film.

Refer to Fig. 5-2, its be illustrated that the embodiment of the present invention provides a kind of can the top view of deformation thin film 120, referring to Fig. 5-2, can deformation thin film 120 can be rectangular film, can the length direction of deformation thin film 120 can be x, width can be z, deformation thin film 120 can be provided with multiple conductive structures 121 of array arrangement and the multiple of the array arrangement via 122 for deposition material molecule traverse, and conductive structure 121 and via 122 are along can the length direction x of deformation thin film 120 be intervally arranged, the driving line 123 connected one to one with multiple conductive structures 121 can be additionally provided with by deformation thin film 120, this driving line 123 is for applying voltage to the conductive structure 121 driving line 123 to connect one to one, refer to Fig. 5-3, its be illustrated that shown in Fig. 5-2 can the profile at C-C position of deformation thin film 120, referring to Fig. 5-3, can multiple conductive structures 121 on deformation thin film 120 and multiple via 122 along can the length direction x of deformation thin film 120 be intervally arranged.

Refer to Fig. 5-4, its be illustrated that Fig. 5-1 illustrated embodiment provides a kind of can the method flow diagram of manufacture method of deformation thin film, referring to Fig. 5-4, the method flow process can include following step:

In sub-step 5011, underlay substrate forms thin layer.

Refer to Fig. 5-5, it is illustrated that the structural representation on underlay substrate 124 after formation thin layer 125 that Fig. 5-1 illustrated embodiment provides. Wherein, underlay substrate 124 can be transparency carrier, and it can be specifically adopt glass, quartz, transparent resin etc. to have a leaded light of certain robustness and substrate that nonmetallic materials are made. Illustratively, one layer of deformable material can be coated with on underlay substrate 124, thin layer 125 is obtained after carrying out baking process, or, can also directly adopt on underlay substrate 124, paste the thin film adopting deformable material to be formed in the method for paste, obtaining thin layer 125, this is not construed as limiting by the embodiment of the present invention.

In sub-step 5012, the underlay substrate be formed with thin layer is formed conductive structure and drives line, obtain to be formed can deformation thin film.

Refer to Fig. 5-6, it is illustrated that formation conductive structure 121 and driving line (being not drawn in Fig. 5-6) on the underlay substrate 124 be formed with thin layer 125 that Fig. 5-1 illustrated embodiment provides, obtain to be formed can structural representation after deformation thin film 126, referring to 5-6, thin layer 125 is formed the conductive structure 121 of multiple array arrangement, Fig. 5-7 is the top view of Fig. 5-6, referring to Fig. 5-7, the upper surface of underlay substrate can be rectangle, the upper surface of the thin layer 125 formed can also be rectangle, the length direction of thin layer 125 can be x, width can be z, thin layer 125 is formed the conductive structure 121 of multiple array arrangement, and the driving line 123 connected one to one with multiple conductive structures 121.

In embodiments of the present invention, the underlay substrate 124 be formed with thin layer 125 formed conductive structure 121 and drive line can include following two mode:

First kind of way, on the underlay substrate 124 be formed with thin layer 125, form conductive structure 121 by patterning processes and drive line, specifically, refer to Fig. 5-8, it is illustrated that a kind of method flow diagram forming conductive structure 121 and driving line on the underlay substrate 124 be formed with thin layer 125 that Fig. 5-1 illustrated embodiment provides, referring to Fig. 5-8, the method flow process can include following several step:

In sub-step 50121a, the underlay substrate be formed with thin layer sequentially forms metal level and photoresist layer.

Refer to Fig. 5-9, the structural representation after what it was illustrated that Fig. 5-1 illustrated embodiment provides sequentially form on the underlay substrate 124 be formed with thin layer 125 metal level 127 and photoresist layer 128. Specifically, can first adopt coating, magnetron sputtering, thermal evaporation or plasma enhanced chemical vapor deposition method (English: PlasmaEnhancedChemicalVaporDeposition, PECVD) etc. it is called for short: method deposits one layer on underlay substrate 124 and has certain thickness metal material as metal level 127, adopts the methods such as coating, magnetron sputtering, thermal evaporation or PECVD to form photoresist layer 128 on the underlay substrate 124 be formed with metal level 127 afterwards again.

In sub-step 50122a, after adopting mask plate that the underlay substrate being formed with photoresist layer is exposed, is developed, forming photoetching offset plate figure, photoetching offset plate figure includes: district removed completely by photoresist district and photoresist.

Refer to Fig. 5-10, after it is illustrated that the underlay substrate 124 being formed with photoresist layer 128 is exposed, develops by the employing mask plate that Fig. 5-1 illustrated embodiment provides, form the structural representation after photoetching offset plate figure 129, wherein, photoetching offset plate figure 129 may include that district 1292 removed completely by photoresist district 1291 and photoresist.Specifically, can first adopt mask plate, by exposure technology, the underlay substrate 124 being formed with photoresist layer 128 is exposed, photoresist layer 128 is made to form complete exposure district and non-exposed area, it is corresponding that district 1292 is removed in complete exposure district completely with photoresist, non-exposed area is photoresist district 1291, adopts developer solution that the photoresist layer 128 after exposure is carried out development treatment afterwards so that photoresist layer 128 forms photoetching offset plate figure 129.

In sub-step 50123a, adopt etching technics, remove photoresist and remove the metal level that district is corresponding completely.

Refer to Fig. 5-11, it is illustrated that the employing etching technics that Fig. 5-1 illustrated embodiment provides, and the structural representation after the metal level 127 of district 1292 correspondence removed completely by removal photoresist. Specifically, it is possible to adopt the mode of etching liquid etching to remove photoresist and remove the metal level 127 of district 1292 correspondence completely, after removing the metal level 127 that district 1292 correspondence removed completely by photoresist, the remainder on metal level 127 is conductive structure and drives line.

In sub-step 50124a, the photoresist in stripping photoresist district, make region corresponding with photoresist district on metal level form conductive structure and driving line, obtain to be formed can deformation thin film.

Refer to Fig. 5-12, it is illustrated that the photoresist in stripping photoresist district 1291 that Fig. 5-1 illustrated embodiment provides, make region corresponding with photoresist district 1291 on metal level 127 form conductive structure 121 and driving line (being not drawn in Fig. 5-12), obtain to be formed can structural representation after deformation thin film 126. Wherein, it should be noted that, remove the metal level 127 of district 1292 correspondence completely owing to removing photoresist after, remainder on metal level 127 is conductive structure and drives line, therefore, what directly indicate in Fig. 5-12 is the driving line being not drawn in conductive structure 121, Fig. 5-12 connecting one to one with conductive structure 121.

The second way, on the underlay substrate 124 be formed with thin layer 125, form conductive structure 121 by the mode pasted and drive line, specifically, refer to Fig. 5-13, it is illustrated that the another kind that Fig. 5-1 illustrated embodiment provides forms conductive structure 121 on the underlay substrate 124 be formed with thin layer 125 and drives the method flow diagram of line, referring to Fig. 5-13, the method flow process can include following several step:

In sub-step 50121b, the underlay substrate be formed with thin layer is pasted conductive structure and drives line, obtain to be formed can deformation thin film.

Refer to Fig. 5-12, it is illustrated that what Fig. 5-1 illustrated embodiment provided pastes conductive structure 121 on the underlay substrate 124 be formed with thin layer 125 and drive line, obtain to be formed can structural representation after deformation thin film 126. Specifically, the underlay substrate 124 be formed with thin layer 125 is pasted metal derby as conductive structure 121, paste bonding jumper as driving line, and metal derby and bonding jumper are connected one to one.

In sub-step 5013, to be formed can be peeled off by deformation thin film from underlay substrate.

Refer to Fig. 5-14, its be illustrated that Fig. 5-1 illustrated embodiment provides by be formed can deformation thin film 126 from the structural representation after peeling off underlay substrate 124. Referring to Fig. 5-14, thin layer 125 is formed with multiple conductive structures 121 of array arrangement.

In sub-step 5014, to be formed can except conductive structure with drive punching on the region except line on deformation thin film, make to be formed deformation thin film to form via, obtain first can deformation thin film, first can deformation thin film be that at least two can any one in deformation thin film.

Refer to Fig. 5-15, its be illustrated that Fig. 5-1 illustrated embodiment provides to be formed can except conductive structure 121 with drive punching on the region except line on deformation thin film 126, making to be formed to form via 122 on deformation thin film 126, obtaining first can structural representation after deformation thin film 120.Referring to Fig. 5-15, deformation thin film 120 can be formed with multiple conductive structures 121 and the via 122 of array arrangement, and conductive structure 121 and via 122 are intervally arranged.

Wherein. Can adopt the mode of laser boring or the mode of mechanical punching to be formed can except conductive structure 121 with drive punching on the region except line on deformation thin film. This is not limited by the embodiment of the present invention.

In step 502, at least two can be arranged on lower portion by deformation thin film, make at least two can the face of deformation thin film parallel.

Wherein, each can the face of deformation thin film 120 can be rectangle plane, framework 110 can be rectangle frame, therefore, at least two can be arranged on lower portion by deformation thin film, make at least two can the face of deformation thin film parallel may include that by least two can deformation thin film 120 to be arranged on framework 110 internal, make at least two can deformation thin film 120 along the short transverse array arrangement successively of framework 110 inside framework 110, and at least two can the face of deformation thin film 120 parallel. Wherein, the short transverse of framework 110 and the short transverse of evaporated device are parallel.

Refer to Fig. 6, it illustrates the method flow diagram of the control method of a kind of thickness actuator that one embodiment of the invention provides, the control method of this thickness actuator may be used for regulating the thickness of evaporation film, and referring to Fig. 6, the control method of this thickness actuator can include following several step:

In step 601, any two in deformation thin film voltage can be applied by the conductive structure on deformation thin film at least two, making conductive structure attract each other or repel, driving any two to move by deformation thin film, any two can the relative position of via on deformation thin film change.

Specifically, as shown in Fig. 2 or Fig. 3-1, thickness actuator 10 includes at least two can deformation thin film 120, at least two can the face of deformation thin film 120 parallel, at least two each in deformation thin film 120 can be both provided with conductive structure 121 and the via 122 for deposition material molecule traverse on deformation thin film 120. Each in deformation thin film 120 voltage can can be applied by conductive structure 121 on deformation thin film 120 at least two, conductive structure 121 is made to attract each other or repel, drive any two can move by deformation thin film 120, make any two can deformation thin film 120 via 122 relative position change.

Alternatively, as shown in Fig. 3-3, each deformation thin film 120 can be both provided with multiple conductive structures 121 of array arrangement and multiple vias 122 of array arrangement, each deformation thin film 120 can be additionally provided with a plurality of driving line 123, a plurality of driving line 123 connects one to one with multiple conductive structures 121, therefore, can by voltage can be applied by the conductive structure 121 on deformation thin film 120 to any two two by the line 123 that drives that is connected of the conductive structure 121 on deformation thin film 120 with any two, make any two can conductive structure 121 on deformation thin film 120 mutually exclusive.

Alternatively, any two in deformation thin film 120 voltage can be applied by the conductive structure 121 on deformation thin film 120 at least two, make any two can attract or repel by the conductive structure 121 on deformation thin film 120, driving any two to move by deformation thin film 120, any two the relative position of via 122 on deformation thin film 120 can change and specifically may include that

Any two in deformation thin film 120 voltage that direction is identical can be applied by the conductive structure 121 on deformation thin film 120 at least two, make any two can conductive structure 121 on deformation thin film 120 mutually exclusive, driving any two the neighboring area of conductive structure 121 on deformation thin film 120 to be located remotely from each other, any two can the relative position of via 122 on deformation thin film 120 change; Or, any two in deformation thin film 120 voltage in opposite direction can be applied by the conductive structure 121 on deformation thin film 120 at least two, any two is made to attract each other by the conductive structure 121 on deformation thin film 120, drive any two can the neighboring area of conductive structure 121 on deformation thin film 120 close to each other, any two can the relative position of via 121 on deformation thin film 120 change. Wherein, what the neighboring area of conductive structure 121 referred to the surrounding that is positioned at conductive structure 121 can region on deformation thin film 120.

In sum, the control method of the thickness actuator that the embodiment of the present invention provides, by any two in deformation thin film voltage can be applied by the conductive structure on deformation thin film at least two, make to attract between conductive structure or repel, any two is driven to move by deformation thin film, any two can deformation thin film via relative position change, when the relative position of via changes, the amount of deposition material by via can be regulated, and then regulate deposition material treating the sedimentation rate of diverse location on plated substrate, make to treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous, solve the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, reach the effect of the homogeneity of the thickness improving evaporation film.

Refer to Fig. 7, it illustrates the structural representation of a kind of evaporated device 20 that one embodiment of the invention provides, this evaporated device 20 may be used for treating formation evaporation film on plated substrate, and this evaporated device 20 may include that the thickness actuator 10 shown in Fig. 2 or Fig. 3-1.

Referring to Fig. 7, this evaporated device 20 also includes: evaporation chamber 201, be arranged on evaporation chamber interior evaporation source 202, be arranged on the inwall of evaporation chamber 201 and be positioned at the thickness detector 203 above evaporation source 202, to be arranged on evaporation chamber 201 internal and be positioned at the switch 204 above thickness detector 203, be arranged on the evaporation the first bracing frame 205 and the second bracing frame 206 chamber 201 within, and is arranged on the motor 207 being deposited with outside chamber 201.

Wherein, the first bracing frame 205 and the second bracing frame 206 are connected with motor 207 respectively through the power transmission shaft 208 through the cavity wall being deposited with chamber 201, and the first bracing frame 205 may be used for support and treats plated substrate, and the second bracing frame 206 may be used for supporting mask plate.

It is internal that thickness actuator 10 is fixedly installed on evaporation chamber 201, and it is positioned at the top of switch 204, the lower section of the second bracing frame 206, thickness actuator 10 for by regulate thickness actuator 10 at least two can any two in deformation thin film can the relative position of via on deformation thin film, regulate deposition material molecule in the sedimentation rate treated on plated substrate.

Wherein, evaporation chamber 201 can be vacuum evaporation chamber or antivacuum evaporation chamber, and this is not limited by the embodiment of the present invention. Evaporation source 202 is for forming the deposition material molecule of gasification, when the temperature that heating evaporation source 202 makes evaporation source 202 reaches preset temperature, evaporation source 202 can evaporate the deposition material molecule of gasification, and thickness detector 203 can detect deposition material molecule in the sedimentation rate treating on plated substrate. Thickness detector 203 can be specifically adopt sensor and process the detector that assembly is formed, speed when sensor can gather deposition material molecule by thickness detector 203, processing assembly can obtain deposition material molecule in the sedimentation rate treating on plated substrate according to the rate calculations that sensor detects. Switch 204 can control beginning or the end of evaporation, when thickness detector 203 detects that deposition material molecule reaches targeted rate in the sedimentation rate on plated substrate, open switch 204, deposition material molecule can pass sequentially through switch 204, thickness actuator 10 and be fixed on the mask plate on the second bracing frame 206, deposits to and is fixed on treating on plated substrate on the first bracing frame 205.

In sum, the evaporated device that the embodiment of the present invention provides, evaporated device includes thickness actuator, thickness actuator can be formed by deformation thin film by framework and at least two, by any two in deformation thin film voltage can be applied by the conductive structure on deformation thin film at least two, make to attract between conductive structure or repel, any two is driven to move by deformation thin film, any two can deformation thin film via relative position change, when the relative position of via changes, the amount of deposition material by via can be regulated, and then regulate deposition material treating the sedimentation rate of diverse location on plated substrate, make to treat that the thickness of the evaporation film of plated substrate diverse location is homogeneous, solve the problem that the homogeneity of the thickness being deposited with film in correlation technique is poor, reach the effect of the homogeneity of the thickness improving evaporation film.

Refer to Fig. 8, it illustrates the fundamental diagram of a kind of evaporated device that one embodiment of the invention provides, evaporated device can for the evaporated device 20 shown in Fig. 7, and this evaporated device 20 may include that the thickness actuator 10 shown in Fig. 2 or Fig. 3-1.

Referring to Fig. 7, this evaporated device 20 is operationally, to treat that plated substrate E is fixed in evaporation chamber 201 by the first bracing frame 205, by the second bracing frame 206, mask plate F will be fixed in evaporation chamber 201 so that mask plate F is positioned at and treats the plated substrate E side near vapor deposition source 201. heating evaporation source 202 makes the temperature of evaporation source 202 reach preset temperature, evaporation source 202 can evaporate the deposition material molecule of gasification, thickness detector 203 can detect deposition material molecule in the sedimentation rate treated on plated substrate E, when thickness detector 203 detects that detection deposition material molecule reaches targeted rate in the sedimentation rate on plated substrate E, open switch, and open motor 207, motor 207 drives the first bracing frame 205 and the second bracing frame 206 to rotate by power transmission shaft 208, and then drive and treat that plated substrate E and mask plate F rotate, after opening switch, deposition material molecule passes sequentially through switch, via on thickness actuator 10 and mask plate F, deposit to and treat on plated substrate E. the deposition material molecule sedimentation rate in the various location treating plated substrate E can be regulated by thickness actuator 10, and then make to treat that the thickness of the evaporation film of plated substrate E diverse location is homogeneous.

One of ordinary skill in the art will appreciate that all or part of step realizing above-described embodiment can be completed by hardware, can also be completed by the hardware that program carrys out instruction relevant, described program can be stored in a kind of computer-readable recording medium, storage medium mentioned above can be read only memory, disk or CD etc.

The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.

Claims

1. a thickness actuator, it is characterised in that described thickness actuator includes: framework and at least two can deformation thin film,

2. thickness actuator according to claim 1, it is characterised in that

Each deformation thin film can be both provided with multiple conductive structures of array arrangement and multiple vias of array arrangement.

3. thickness actuator according to claim 2, it is characterised in that

Each can being additionally provided with a plurality of driving line on deformation thin film, described a plurality of driving line and the plurality of conductive structure connect one to one.

4. thickness actuator according to claim 1, it is characterised in that

Described at least two can in deformation thin film each can the structure of deformation thin film identical.

5. thickness actuator according to claim 2, it is characterised in that

Each can be intervally arranged with described via by the described conductive structure on deformation thin film.

6. thickness actuator according to claim 2, it is characterised in that

Each can the face of deformation thin film be rectangle plane;

7. thickness actuator according to claim 6, it is characterised in that

Each can described conductive structure on deformation thin film and described via can the length direction of deformation thin film be intervally arranged along described;Or,

8. thickness actuator according to claim 3, it is characterised in that

Described conductive structure and described driving line all adopt metal material to be formed.

9. according to the arbitrary described thickness actuator of claim 1 to 8, it is characterised in that

Described at least two can the number of deformation thin film be 2;

Described via is circular vias or square vias.

10. the manufacture method of a thickness actuator, it is characterised in that the manufacture method of described thickness actuator includes:

11. the manufacture method of thickness actuator according to claim 10, it is characterised in that each can be additionally provided with, on deformation thin film, the driving line being connected with described conductive structure, described manufacture at least two can deformation thin film, including:

Underlay substrate is formed thin layer;

12. the manufacture method of thickness actuator according to claim 11, it is characterised in that described form described conductive structure and described driving line on the underlay substrate being formed with described thin layer, obtain to be formed can deformation thin film, including:

13. the manufacture method of thickness actuator according to claim 11, it is characterised in that described form described conductive structure and described driving line on the underlay substrate being formed with described thin layer, obtain to be formed can deformation thin film, including:

14. the manufacture method according to the arbitrary described thickness actuator of claim 11 to 13, it is characterised in that the described thin layer that formed on underlay substrate includes:

Or,

15. the manufacture method according to the arbitrary described thickness actuator of claim 11 to 13, it is characterised in that described to be formed can punch on region except described conductive structure and described driving line except on deformation thin film described, including:

Or,

16. the manufacture method of thickness actuator according to claim 10, it is characterised in that

Each can the face of deformation thin film be rectangle plane, and described framework is rectangle frame,

Make described at least two can the face of deformation thin film parallel, including:

Make described at least two can deformation thin film along the short transverse array arrangement successively of described framework at described lower portion, and described at least two can the face of deformation thin film parallel.

17. the control method of a thickness actuator, it is characterised in that the control method of described thickness actuator includes:

18. the control method of thickness actuator according to claim 17, it is characterized in that, each deformation thin film can be both provided with multiple conductive structures of array arrangement and multiple vias of array arrangement, each deformation thin film can be additionally provided with a plurality of driving line, described a plurality of driving line and the plurality of conductive structure connect one to one

19. the control method of the thickness actuator according to claim 17 or 18, it is characterised in that

Described any two in deformation thin film can apply voltage by the conductive structure on deformation thin film at least two, described conductive structure is made to attract each other or repel, driving described any two to move by deformation thin film, described any two can the relative position of via on deformation thin film change, including:

Or,

20. an evaporated device, it is characterised in that described evaporated device includes: the arbitrary described thickness actuator of claim 1 to 9.

21. evaporated device according to claim 20, it is characterized in that, described evaporated device also includes: is deposited with chamber, is arranged on the evaporation source of described evaporation chamber interior, is arranged on the inwall of described evaporation chamber and is positioned at the thickness detector above described evaporation source, be arranged on described evaporation chamber interior and be positioned at the switch above described thickness detector, be arranged on the first bracing frame and second bracing frame of described evaporation chamber interior, and it is arranged on the motor of described evaporation exterior thereto