JPH11222670A - Film thickness monitor and film forming device using this - Google Patents
Film thickness monitor and film forming device using thisInfo
- Publication number
- JPH11222670A JPH11222670A JP10041176A JP4117698A JPH11222670A JP H11222670 A JPH11222670 A JP H11222670A JP 10041176 A JP10041176 A JP 10041176A JP 4117698 A JP4117698 A JP 4117698A JP H11222670 A JPH11222670 A JP H11222670A
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- film
- thickness monitor
- shielding
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 27
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000012423 maintenance Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 76
- 230000008020 evaporation Effects 0.000 description 19
- 239000011368 organic material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば蒸着装置等
の成膜装置において成膜対象物上に形成される膜厚を測
定する膜厚モニターの技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique of a film thickness monitor for measuring a film thickness formed on a film formation target in a film forming apparatus such as a vapor deposition apparatus.
【０００２】[0002]
【従来の技術】近年、例えば保護膜、絶縁膜、有機ＥＬ
素子等には、有機材料による有機薄膜が広く用いられる
ようになっている。図３は、従来の有機薄膜を形成する
ための成膜装置の概略構成を示すものである。図３に示
すように、この成膜装置１０１は、図示しない真空排気
系に接続された真空処理槽１０２を有し、この真空処理
槽１０２内の上部に、成膜対象物である基板１０３が基
板ホルダー１０４に保持された状態で配置される。2. Description of the Related Art In recent years, for example, protective films, insulating films, organic EL
Organic thin films made of organic materials are widely used for devices and the like. FIG. 3 shows a schematic configuration of a conventional film forming apparatus for forming an organic thin film. As shown in FIG. 3, the film forming apparatus 101 has a vacuum processing tank 102 connected to a vacuum evacuation system (not shown). It is arranged while being held by the substrate holder 104.
【０００３】一方、真空処理槽１０２の下部には、蒸発
材料１０５を加熱して蒸発させるための蒸発源１０６が
配置されている。なお、この蒸発源１０６の上方近傍及
び基板１０３の下方近傍には、図示しないシャッターが
設けられている。On the other hand, an evaporation source 106 for heating and evaporating the evaporation material 105 is disposed below the vacuum processing tank 102. A shutter (not shown) is provided near the upper portion of the evaporation source 106 and near the lower portion of the substrate 103.
【０００４】また、基板１０３の近傍には、基板１０３
の表面に形成される蒸着膜の膜厚を測定するための膜厚
モニター１０８が配設されている。この膜厚モニター１
０８は、モニター本体１０９の基板１０３側の端部に所
定の共振周波数で振動する水晶振動子１１０を有してい
る。そして、この水晶振動子１１０に付着する蒸発材料
１０５の蒸気１０７の量に応じて変化する水晶振動子１
１０の共振周波数を測定することによって基板１０３上
の膜厚を測定するようになっている。Further, near the substrate 103,
A film thickness monitor 108 for measuring the film thickness of the deposited film formed on the surface of the device is provided. This film thickness monitor 1
Reference numeral 08 includes a crystal resonator 110 that vibrates at a predetermined resonance frequency at an end of the monitor main body 109 on the substrate 103 side. The quartz oscillator 1 changes according to the amount of the vapor 107 of the evaporation material 105 attached to the quartz oscillator 110.
By measuring the ten resonance frequencies, the film thickness on the substrate 103 is measured.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の技術においては、次のような問題があった。
すなわち、従来の膜厚モニター１０８の場合、常に蒸発
材料１０５の蒸気１０７にさらされているため、多数の
基板１０３を連続して蒸着すると、水晶振動子１１０に
多量の蒸発材料１０５が堆積する。このため、従来の蒸
着装置１０１においては、頻繁に膜厚モニター１０８の
メンテナンスを行わなければならず、成膜処理の効率を
上げることができないという問題があった。However, such a conventional technique has the following problems.
That is, in the case of the conventional film thickness monitor 108, since the substrate 107 is constantly exposed to the vapor 107 of the evaporation material 105, if a large number of substrates 103 are continuously deposited, a large amount of the evaporation material 105 is deposited on the crystal unit 110. For this reason, in the conventional vapor deposition apparatus 101, maintenance of the film thickness monitor 108 must be performed frequently, and there has been a problem that the efficiency of the film forming process cannot be increased.
【０００６】本発明は、このような従来の技術の課題を
解決するためになされたもので、メンテナンスの間隔を
長くすることによって成膜処理の効率を向上しうる膜厚
モニター及び成膜装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art. A film monitor and a film forming apparatus capable of improving the efficiency of film forming processing by lengthening a maintenance interval are provided. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１記載の発明は、真空中において付着
する成膜材料の量に応じて共振周波数が変化する水晶振
動子の当該周波数変化量に基づいて成膜対象物上の膜厚
を測定する膜厚モニターであって、上記水晶振動子に向
って飛翔する上記成膜材料を間欠的に遮蔽する遮蔽手段
を有することを特徴とする膜厚モニターである。According to a first aspect of the present invention, there is provided a quartz oscillator having a resonance frequency which varies according to the amount of a film-forming material deposited in a vacuum. A film thickness monitor for measuring a film thickness on a film formation target based on a change amount, comprising a shielding unit for intermittently shielding the film formation material flying toward the quartz oscillator. This is a film thickness monitor to be used.
【０００８】請求項１記載の発明の場合、水晶振動子に
向って飛翔する成膜材料が遮蔽手段によって間欠的に遮
蔽されるため、従来の膜厚モニターに比べて単位時間に
水晶振動子に付着する成膜材料の量は少なくなる。した
がって、本発明によれば、多数の成膜対象物に対して連
続的に成膜した場合であっても、膜厚モニターを頻繁に
メンテナンスを行う必要はない。In the case of the first aspect of the present invention, the film-forming material flying toward the crystal unit is intermittently shielded by the shielding means, so that the film formation material is applied to the crystal unit in a unit time compared to the conventional film thickness monitor. The amount of deposited film material is reduced. Therefore, according to the present invention, it is not necessary to frequently maintain the film thickness monitor even when a large number of film formation targets are continuously formed.
【０００９】なお、本発明は、成膜材料が有機材料であ
って蒸着によって成膜を行う場合に特に効果的なもので
ある。すなわち、有機材料を蒸発させる場合は、成膜材
料の加熱温度が低く、蒸発速度が一定であるため、より
正確に膜厚の測定を行うことができる。The present invention is particularly effective when the film forming material is an organic material and the film is formed by vapor deposition. That is, when the organic material is evaporated, the heating temperature of the film-forming material is low and the evaporation rate is constant, so that the film thickness can be measured more accurately.
【００１０】この場合、請求項２記載の発明のように、
遮蔽手段が、水晶振動子に対して飛翔する成膜材料が通
過可能な非遮蔽部を有する遮蔽部材を備え、この遮蔽部
材の非遮蔽部が間欠的に上記水晶振動子に対向するよう
に遮蔽部材が所定の速度で移動可能に構成されているこ
とも効果的である。In this case, as in the second aspect of the present invention,
The shielding means includes a shielding member having a non-shielding portion through which a film-forming material flying on the crystal oscillator can pass, and the shielding member intermittently shields the non-shielding portion so as to face the crystal oscillator. It is also effective that the member is configured to be movable at a predetermined speed.
【００１１】ここで、遮蔽部材の非遮蔽部としては、請
求項３記載の発明のように、切り欠き状に形成するこ
と、又は請求項４記載の発明のように、孔状に形成する
ことによって得ることができる。Here, the non-shielding portion of the shielding member may be formed in a notch shape as in the invention of claim 3, or may be formed in a hole shape as in the invention of claim 4. Can be obtained by
【００１２】請求項２乃至４記載の発明によれば、水晶
振動子に向って飛翔する成膜材料を間欠的に遮蔽する遮
蔽手段を簡易な構成で得ることができる。According to the second to fourth aspects of the present invention, it is possible to obtain a shielding means for intermittently shielding a film-forming material flying toward a quartz oscillator with a simple configuration.
【００１３】一方、請求項５記載の発明は、成膜対象物
に対して所定の成膜材料を堆積可能な真空処理槽を有
し、この真空処理槽内に、請求項１乃至４のいずれか１
項記載の膜厚モニターが設けられていることを特徴とす
る成膜装置である。[0013] On the other hand, the invention according to claim 5 has a vacuum processing tank capable of depositing a predetermined film forming material on a film forming object, and the vacuum processing tank has therein a vacuum processing tank. Or 1
A film forming apparatus characterized by comprising a film thickness monitor described in the paragraph.
【００１４】請求項５記載の発明によれば、膜厚モニタ
ーに付着する成膜材料が少なく、長期間にわたって膜厚
モニターのメンテナンスが不要な成膜装置を得ることが
できる。According to the fifth aspect of the present invention, it is possible to obtain a film forming apparatus in which little film forming material adheres to the film thickness monitor and maintenance of the film thickness monitor is not required for a long period of time.
【００１５】[0015]
【発明の実施の形態】以下、本発明に係る膜厚モニター
及びこれを用いた成膜装置の好ましい実施の形態を図面
を参照して詳細に説明する。図１（ａ）は、本実施の形
態の成膜装置の概略構成図、図１（ｂ）は、本実施の形
態の膜厚モニターの遮蔽板の一例を示す斜視図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a film thickness monitor and a film forming apparatus using the same according to the present invention will be described below in detail with reference to the drawings. FIG. 1A is a schematic configuration diagram of a film forming apparatus according to the present embodiment, and FIG. 1B is a perspective view illustrating an example of a shielding plate of a film thickness monitor according to the present embodiment.
【００１６】図１（ａ）に示すように、本実施の形態の
成膜装置１は、図示しない真空排気系に接続された真空
処理槽２を有し、この真空処理槽２内の上部に、成膜対
象物である基板３が基板ホルダー４に保持された状態で
配される。なお、基板３の下方近傍には、図示しないシ
ャッターが設けられている。As shown in FIG. 1A, a film forming apparatus 1 according to the present embodiment has a vacuum processing tank 2 connected to a vacuum exhaust system (not shown). The substrate 3 which is a film formation target is disposed in a state where the substrate 3 is held by the substrate holder 4. Note that a shutter (not shown) is provided near the lower part of the substrate 3.
【００１７】また、真空処理槽２の下部には、有機材料
等の蒸発材料（成膜材料）５を加熱して蒸発させるため
の蒸発源６が配置されている。この蒸発源６は、図示し
ない温度制御手段によって蒸発材料５を所定の温度に加
熱してその蒸発速度を調整することができるように構成
されている。なお、この蒸発源６の上方には、図示しな
いシャッターが設けられている。An evaporating source 6 for heating and evaporating an evaporating material (film forming material) 5 such as an organic material is disposed below the vacuum processing tank 2. The evaporation source 6 is configured so that the evaporation material 5 can be heated to a predetermined temperature by a temperature control means (not shown) to adjust the evaporation rate. A shutter (not shown) is provided above the evaporation source 6.
【００１８】一方、基板３の近傍には、基板３の表面に
形成される蒸着膜の膜厚を測定するための公知の膜厚モ
ニター８が配設されている。この膜厚モニター８は、モ
ニター本体９の基板３側の端部に、所定の共振周波数で
振動する水晶振動子１０が設けられ、その水晶振動子１
０の周波数変化量に基づき、基板３上に形成される蒸着
膜の膜厚を測定する機能を有している。また、この膜厚
モニター８は、上記図示しない温度制御手段に接続され
ている。On the other hand, in the vicinity of the substrate 3, a known film thickness monitor 8 for measuring the film thickness of the deposited film formed on the surface of the substrate 3 is provided. The film thickness monitor 8 is provided with a quartz oscillator 10 that vibrates at a predetermined resonance frequency at an end of the monitor body 9 on the substrate 3 side.
It has a function of measuring the thickness of the deposited film formed on the substrate 3 based on the frequency change amount of zero. The film thickness monitor 8 is connected to the above-mentioned temperature control means (not shown).
【００１９】図１（ａ）に示すように、本実施の形態の
膜厚モニター８は、真空処理槽２内において膜厚モニタ
ー８の水晶振動子１０に向って飛翔する蒸発材料５を間
欠的に遮蔽する遮蔽手段１１を有している。この遮蔽手
段１１は、モニター本体９に隣接して配設された駆動手
段１２と、膜厚モニター８の蒸発源６側で水晶振動子１
０と対向する位置に配設され、駆動手段１２によって回
転される遮蔽板（遮蔽部材）１３とから構成される。As shown in FIG. 1A, the film thickness monitor 8 of the present embodiment intermittently controls the evaporation material 5 flying toward the crystal unit 10 of the film thickness monitor 8 in the vacuum processing tank 2. And a shielding means 11 for shielding the light. The shielding means 11 includes a driving means 12 disposed adjacent to the monitor main body 9 and a quartz oscillator 1 on the evaporation source 6 side of the film thickness monitor 8.
And a shielding plate (shielding member) 13 which is disposed at a position opposing to the rotation member 0 and is rotated by the driving means 12.
【００２０】図１（ｂ）に示すように、この遮蔽板１３
は例えば円盤形状を有するもので、その周縁の一部に切
り欠き部（非遮蔽部）１３ａが設けられている。この切
り欠き部１３ａは、膜厚モニター８の水晶振動子１０の
直径より若干大きい幅で形成される。そして、これによ
り、切り欠き部１３ａが水晶振動子１０と対向する位置
にあるときには、この切り欠き部１３ａから水晶振動子
１０が露出する。As shown in FIG. 1B, this shielding plate 13
Has, for example, a disk shape, and has a cutout (non-shielding portion) 13a at a part of the periphery thereof. The notch 13a is formed to have a width slightly larger than the diameter of the crystal unit 10 of the film thickness monitor 8. Thus, when the notch 13a is located at a position facing the crystal unit 10, the crystal unit 10 is exposed from the notch 13a.
【００２１】遮蔽手段１１の遮蔽板１３は、駆動手段１
２により所定の速度で回転される。この場合、遮蔽板１
３は、モニター本体９の水晶振動子１０が、切り欠き部
１３ａを介して一定の間隔で露出するように、すなわ
ち、水晶振動子１０に向って飛翔する蒸発材料５の蒸気
７が間欠的に遮蔽されるように回転される。The shielding plate 13 of the shielding means 11 is
2 rotates at a predetermined speed. In this case, the shielding plate 1
3 is such that the crystal oscillator 10 of the monitor main body 9 is exposed at regular intervals through the notch 13a, that is, the vapor 7 of the evaporation material 5 flying toward the crystal oscillator 10 intermittently. Rotated so as to be occluded.
【００２２】具体的には、遮蔽板１３を一定の速度で連
続的に一定方向に回転させることによってこれを達成す
ることができる。また、図１（ｂ）に示すように水晶振
動子１０を露出させた状態で遮蔽板１３の回転を一定時
間停止させ、遮蔽板１３を断続的に回転させることによ
ってもこれを達成することができる。なお、この場合
は、遮蔽板１３の回転方向は時計回り方向又は反時計回
り方向のいずれであってもよい。Specifically, this can be achieved by rotating the shielding plate 13 continuously at a constant speed in a constant direction. This can also be achieved by stopping the rotation of the shielding plate 13 for a certain period of time with the crystal resonator 10 exposed as shown in FIG. 1B and intermittently rotating the shielding plate 13. it can. In this case, the rotation direction of the shielding plate 13 may be either clockwise or counterclockwise.
【００２３】図２は、本実施の形態の膜厚モニターの遮
蔽板の他の例を示す斜視図である。図２に示すように、
この遮蔽板１３には、膜厚モニター８の水晶振動子１０
の外径より若干大きな直径を有する孔部１３ｂが形成さ
れ、この孔部１３ｂが水晶振動子１０と対向する位置に
あるときに、この孔部１３ｂから水晶振動子１０が露出
するようになっている。そして、本例の遮蔽板１３も、
上述した遮蔽板１３と同様に回転される。FIG. 2 is a perspective view showing another example of the shield plate of the film thickness monitor according to the present embodiment. As shown in FIG.
The shielding plate 13 is provided with a quartz oscillator 10 of the film thickness monitor 8.
A hole 13b having a diameter slightly larger than the outer diameter of the crystal resonator 10 is formed. When the hole 13b is located at a position facing the crystal resonator 10, the crystal resonator 10 is exposed from the hole 13b. I have. And the shielding plate 13 of this example also
It is rotated in the same manner as the shield plate 13 described above.
【００２４】以上述べたように本実施の形態において
は、水晶振動子１０に向って飛翔する蒸発材料５の蒸気
７が遮蔽手段１１によって間欠的に遮蔽されるため、従
来の膜厚モニターに比べて単位時間に水晶振動子１０に
付着する蒸発材料の量は少なくなる。したがって、本実
施の形態によれば、多数の基板３に対して連続的に成膜
した場合であっても、膜厚モニター８を頻繁にメンテナ
ンスを行う必要はない。As described above, in the present embodiment, the vapor 7 of the evaporating material 5 flying toward the crystal unit 10 is intermittently shielded by the shielding means 11, and therefore, compared with the conventional film thickness monitor. Thus, the amount of evaporative material attached to the crystal unit 10 per unit time is reduced. Therefore, according to the present embodiment, it is not necessary to frequently maintain the film thickness monitor 8 even when a large number of substrates 3 are continuously formed.
【００２５】また、本実施の形態の場合、膜厚モニター
８の蒸発源６側で水晶振動子１０と対向する位置に設け
られた遮蔽板１３を回転させ、非遮蔽部である切り欠き
部１３ａ又は孔部１３ｂを間欠的に水晶振動子１０に対
向させるものであるから、簡単な構成でメンテナンスの
間隔の長い膜厚モニター８を得ることができる。In the case of the present embodiment, the shielding plate 13 provided at a position facing the crystal unit 10 on the side of the evaporation source 6 of the film thickness monitor 8 is rotated, and the notch portion 13a which is a non-shielding portion is rotated. Alternatively, since the hole 13b is intermittently opposed to the crystal unit 10, the film thickness monitor 8 having a long maintenance interval can be obtained with a simple configuration.
【００２６】このように本実施の形態によれば、膜厚モ
ニター８に付着する蒸発材料５が少なく、長期間にわた
って膜厚モニター８のメンテナンスが不要な成膜装置１
を得ることができる。As described above, according to the present embodiment, the vapor deposition material 5 attached to the film thickness monitor 8 is small, and the film deposition apparatus 1 does not require maintenance of the film thickness monitor 8 for a long period of time.
Can be obtained.
【００２７】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上述の実施の形態においては、円盤状の遮蔽板を用いる
ようにしたが、本発明はこれに限られず、例えば四角
形、多角形等の板状の部材を用いることもできる。It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made. For example,
In the above-described embodiment, a disk-shaped shielding plate is used. However, the present invention is not limited to this, and a plate-shaped member such as a square or a polygon may be used.
【００２８】また、上述の実施の形態の場合は、遮蔽板
を回転させて間欠的に水晶振動子を非遮蔽部から露出さ
せるようにしたが、本発明はこれに限られず、例えば遮
蔽板を平行に移動させることにより間欠的に水晶振動子
を露出させるように構成することもできる。In the above embodiment, the crystal plate is intermittently exposed from the non-shielding portion by rotating the shield plate. However, the present invention is not limited to this. The crystal oscillator can be intermittently exposed by moving it in parallel.
【００２９】さらに、遮蔽板の非遮蔽部としての切り欠
き部及び孔部の形状についても、種々の形状を採用する
ことができる。Further, various shapes can be adopted for the shape of the cutout portion and the hole portion as the non-shielding portion of the shielding plate.
【００３０】さらにまた、遮蔽板自体を移動することに
より間欠的に水晶振動子を露出させるように構成するこ
とも可能である。Furthermore, it is also possible to configure so that the crystal oscillator is intermittently exposed by moving the shielding plate itself.
【００３１】加えて、本発明は水晶振動子を用いて膜厚
を測定する装置であれば、蒸着装置に限らず、例えばス
パッタリング装置等の種々の成膜装置に適用することが
できる。ただし、本発明は有機材料を蒸発させる蒸着装
置に適用した場合には、蒸発速度が一定であるため、最
も高精度の膜厚測定が可能になるものである。In addition, the present invention can be applied not only to a vapor deposition apparatus but also to various film forming apparatuses such as a sputtering apparatus as long as the apparatus measures a film thickness using a quartz oscillator. However, when the present invention is applied to an evaporation apparatus for evaporating an organic material, the evaporation rate is constant, so that the most accurate film thickness measurement can be performed.
【００３２】[0032]
【発明の効果】以上述べたように本発明によれば、頻繁
に膜厚モニターのメンテナンスを行う必要がなくなるた
め、成膜処理の効率を向上させることができる。As described above, according to the present invention, it is not necessary to frequently perform maintenance of the film thickness monitor, so that the efficiency of the film forming process can be improved.
【図１】（ａ）：本発明の実施の形態の成膜装置の概略
構成図 （ｂ）：同実施の形態の膜厚モニターの遮蔽板の一例を
示す斜視図FIG. 1A is a schematic configuration diagram of a film forming apparatus according to an embodiment of the present invention. FIG. 1B is a perspective view illustrating an example of a shielding plate of a film thickness monitor according to the embodiment.
【図２】同実施の形態の膜厚モニターの遮蔽板の他の例
を示す斜視図FIG. 2 is a perspective view showing another example of the shielding plate of the film thickness monitor of the embodiment.
【図３】従来の有機薄膜を形成するための成膜装置の概
略構成図FIG. 3 is a schematic configuration diagram of a conventional film forming apparatus for forming an organic thin film.
１…成膜装置 ２…真空処理槽 ３…基板（成膜対象
物） ５…蒸発材料（成膜材料） ６…蒸発源 ８…膜
厚モニター ９…モニター本体 １０…水晶振動子１１
…遮蔽手段 １２…駆動手段 １３…遮蔽板（遮蔽部
材） １３ａ…切り欠き部（非遮蔽部） １３ｂ…孔部
（非遮蔽部）DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 2 ... Vacuum processing tank 3 ... Substrate (film-forming object) 5 ... Evaporation material (film-forming material) 6 ... Evaporation source 8 ... Film thickness monitor 9 ... Monitor main body 10 ... Crystal oscillator 11
... shielding means 12 ... driving means 13 ... shielding plate (shielding member) 13a ... notch (non-shielding part) 13b ... hole (non-shielding part)
Claims (5)
じて共振周波数が変化する水晶振動子の当該周波数変化
量に基づいて成膜対象物上の膜厚を測定する膜厚モニタ
ーであって、 上記水晶振動子に向って飛翔する上記成膜材料を間欠的
に遮蔽する遮蔽手段を有することを特徴とする膜厚モニ
ター。1. A film thickness monitor for measuring a film thickness on a film formation target based on a frequency change amount of a quartz oscillator whose resonance frequency changes according to an amount of a film formation material attached in a vacuum. A film thickness monitor having intermittent shielding means for intermittently shielding the film-forming material flying toward the quartz oscillator.
成膜材料が通過可能な非遮蔽部を有する遮蔽部材を備
え、該遮蔽部材の非遮蔽部が間欠的に上記水晶振動子に
対向するように該遮蔽部材が所定の速度で移動可能に構
成されていることを特徴とする請求項１記載の膜厚モニ
ター。And a shielding member having a non-shielding portion through which a film-forming material flying on the crystal oscillator can pass, wherein the non-shielding portion of the shielding member intermittently contacts the crystal oscillator. The film thickness monitor according to claim 1, wherein the shielding member is configured to be movable at a predetermined speed so as to face each other.
れていることを特徴とする請求項２記載の膜厚モニタ
ー。3. The film thickness monitor according to claim 2, wherein the non-shielding portion of the shielding member is formed in a notch shape.
ることを特徴とする請求項２記載の膜厚モニター。4. The film thickness monitor according to claim 2, wherein the non-shielding portion of the shielding member is formed in a hole shape.
可能な真空処理槽を有し、該真空処理槽内に、請求項１
乃至４のいずれか１項記載の膜厚モニターが設けられて
いることを特徴とする成膜装置。5. A vacuum processing tank capable of depositing a predetermined film forming material on a film forming target, wherein the vacuum processing tank has a vacuum processing tank.
A film forming apparatus comprising the film thickness monitor according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10041176A JPH11222670A (en) | 1998-02-06 | 1998-02-06 | Film thickness monitor and film forming device using this |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10041176A JPH11222670A (en) | 1998-02-06 | 1998-02-06 | Film thickness monitor and film forming device using this |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11222670A true JPH11222670A (en) | 1999-08-17 |
Family
ID=12601133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10041176A Pending JPH11222670A (en) | 1998-02-06 | 1998-02-06 | Film thickness monitor and film forming device using this |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11222670A (en) |
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