JP2000114201A - Vapor deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform perpendicular vapor deposition and to switch between full-angle vapor deposition and perpendicular vapor deposition simply, in a vapor deposition system performing full-angle vapor deposition. SOLUTION: A vapor deposition system 1 comprises a vapor deposition source 3, a holding plate 4, and a planetary jig 6. The source 3 is arranged within a chamber 2. The plate 4, which is made of a plate material and arranged on a side opposite to the source 3 within the chamber 2, serves to hold a substrate to be vapor-deposited. The plate 4 also has a holding surface 4a for holding the substrate, and the surface 4a is oriented toward the source 3. The jig 6 supports the plate 4 and also rotates it, in such a manner that vapor-depositing particles evaporated from the source 3 inject onto the surface 4a at a full vapor deposition incident angle. In this case, the plate 4 is arranged so that the surface 4a is substantially perpendicular, with respect to a line connecting the surface 4a to the source 3 during its rotation. A shielding plate 8 (incident angle control means) for controlling the vapor deposition incident angle, at which the vapor-depositing particles are injected onto the surface 4a, is also provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a vapor deposition apparatus,
More specifically, the present invention relates to a vapor deposition apparatus used for forming a vapor deposition film by vapor deposition on a substrate to be vapor deposited such as a semiconductor substrate in the manufacture of a semiconductor device.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, vapor deposition apparatuses for depositing a vapor on a semiconductor substrate are widely used. At present, the vapor deposition apparatus is roughly divided into two types: one that performs full-angle vapor deposition in which the vapor deposition incident angle of a vapor deposition material is a full angle on a substrate to be vapor-deposited, such as a semiconductor substrate, and the other that performs vertical vapor deposition in which the vapor deposition incident angle is substantially a right angle only And two types.

FIG. 3 is a view showing an example of a conventional vapor deposition apparatus for performing full-angle vapor deposition on a substrate to be vapor-deposited. As shown in FIG. 3, inside the chamber 21 of the vapor deposition device 20,
An evaporation source 22 is provided below the evaporation source 22.
The holding plate 23 for holding the substrate to be deposited is located above the evaporation source 22.
A plurality of sheets are arranged toward. The plurality of holding plates 23 are supported by a planetary jig 24 so as to rotate inside the chamber 21.

The planetary jig 24 includes a planetary dome 25 that supports the holding plate 23 and a holder 26 that rotatably supports the planetary dome 25.
The planetary dome 25 is formed in a spherical shape, and is arranged such that the concave surface supporting the holding plate 23 faces the evaporation source 22. Further, since the substantially center of the planetary dome 25 is supported by the holder 26, the planetary dome 25 itself rotates. Meanwhile, holder 2
6 is provided so as to be rotatable around a vertical axis of the evaporation source 22, and the planetary dome 2 is rotated by rotation of the holder 26.
5 revolves around the evaporation source 22.

Further, an evaporation source 22 is provided in the chamber 21.
A shielding plate 27 is provided slightly above. Shielding plate 27
Is provided to alleviate the non-uniformity of the spatial distribution of the vapor from the evaporation source 22 in order to make the film thickness deposited on the substrate to be deposited held by the holding plate 23 uniform. It has a flat shape.

[0006]

Since the conventional vapor deposition apparatus 20 as shown in FIG. 3 is for full-angle vapor deposition, a vapor deposition film is formed, for example, in the state shown in FIG. As shown in FIG. 4A, a silicon nitride film 12 is formed on a semiconductor substrate 11, and the semiconductor substrate 11 is formed on the silicon nitride film 12.
When the opening 13 that exposes the surface to the outside is formed,
When a deposit is deposited on the silicon nitride film 12, a deposition film 14 is formed not only on the upper surface of the silicon nitride film 12 and the bottom of the opening 13 but also on the side wall of the opening 13.

Therefore, as shown in FIG. 4B, a resist 14 patterned by a photolithography process is formed on the deposition film 14, and the deposition film at the bottom of the opening 13 is formed by ion milling using the resist 15 as a mask. 1
When the deposited film 14 is etched to leave No. 4, FIG.
As shown in (c), the deposited film 14 remains not only at the bottom of the opening 13 but also near the side wall.

When a PN junction field effect transistor formed using a substrate made of a compound semiconductor is used in a higher frequency region, a conductive material such as a metal is used as shown in FIG.
When the deposited film 14 is formed as shown in (c), a gap is formed between the deposited film 14 deposited on the side wall of the opening 13 of the silicon nitride film 12 and the upper surface of the silicon nitride film 12 and the channel conductive layer of the compound semiconductor substrate. There is a possibility that parasitic capacitance is formed in the device, causing problems such as deterioration of device characteristics. Therefore, in such a case, it is ideal to perform vertical vapor deposition in which the vapor deposition film 14 can be formed only at the bottom of the opening 13 of the silicon nitride film 12.

However, it is difficult to easily perform vertical vapor deposition in the conventional vapor deposition apparatus 20 for performing full-angle vapor deposition. This is because the rotation of the holding plate 23 due to the revolution and rotation of the planetary dome 25 causes the deposition incident angle of the deposition material to be the full angle with respect to the holding surface 23 a of the holding plate 23 that holds the substrate to be deposited, and the uniform film is formed. This is because the curvature of the planetary dome 25 is set so that a thick vapor deposition film is formed, and the holding plate 23 is supported by such a planetary dome 25.

That is, in the vapor deposition apparatus 20 for full-angle vapor deposition, the angle of incidence of vapor deposition becomes full-angle by rotation of the holding plate 23, and the rotation between the holding surface 23a of the holding plate 23 and the evaporation source 2 during rotation.
2 and the holding surface 23a are not set so that an angle α between the holding surface 23a and the holding surface 23a becomes substantially a right angle. Therefore, it is difficult to perform vertical vapor deposition in which the vapor deposition incident angle is substantially a right angle only with respect to the holding surface 23a.

Therefore, conventionally, since it is necessary to change the type of the vapor deposition apparatus between full-angle vapor deposition and vertical vapor deposition, it is necessary to perform vapor deposition on the same semiconductor substrate. Cause.
In addition, the provision of the two types of vapor deposition devices also causes problems such as requiring time and cost for maintenance.

[0012]

Therefore, in order to solve the above-mentioned problems, a vapor deposition apparatus according to the present invention comprises an evaporation source provided in a chamber and an evaporation source provided on a side of the chamber opposite to the evaporation source. A holding plate made of a plate material for holding a deposition substrate, and a holding surface for holding the substrate to be deposited facing the evaporation source, and supporting the holding plate and evaporating from the evaporation source with respect to the holding surface of the holding plate. A planetary jig for rotating the holding plate so that the deposition incident angle of the deposited material becomes a full angle, wherein the holding plate holds the line connecting the holding surface and the evaporation source during rotation. The apparatus is provided so as to obtain a vertical state in which the surface is substantially vertical, and has an incident angle control means for controlling an incident angle of vapor deposition on the holding surface of the holding plate.

In the above invention, when the holding plate for holding the substrate to be deposited is rotated and the holding surface is in a vertical state in which the holding surface is substantially perpendicular to the line connecting the holding surface and the evaporation source, On the other hand, the vapor deposition incident angle becomes substantially only a right angle, and the vertical vapor deposition is performed on the substrate to be deposited held on the holding surface. Further, since the holding plate is rotated by the planetary jig so that the deposition incident angle of the deposition material becomes the full angle, the full-angle deposition including the state where the deposition incident angle becomes substantially a right angle is performed on the substrate to be deposited. Therefore, in the vapor deposition apparatus of the present invention having the incident angle control means, the incident angle control means only controls the deposition incident angle with respect to the holding surface of the holding plate, and switches between full-angle deposition and vertical deposition. Can be performed.

[0014]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing one embodiment of a vapor deposition apparatus according to the present invention. As shown in FIG. 1, the vapor deposition apparatus 1 includes a chamber 2, an evaporation source 3, a holding plate 4, a planetary jig 5, and an incident angle control means 8.

The chamber 2 is formed of a vacuum container capable of holding the inside of the chamber at a predetermined vacuum state. The evaporation source 3 evaporates a deposit to be deposited on a substrate to be deposited by heating such as irradiation of a filament or an electron beam. The evaporation source 3 is provided in the chamber 2 and at a lower side thereof.

The holding plate 4 is for holding the substrate to be evaporated, and is provided on the upper side of the chamber 2 opposite to the evaporation source 3 with the holding surface 4a for holding the substrate to be evaporated facing the evaporation source 3. Multiple sheets are arranged. The plurality of holding plates 4 are supported by a planetary jig 5 so as to rotate inside the chamber 2. At this time, the plurality of holding plates 4 are rotated by the holding surface 4 with respect to a line 9 connecting the holding surface 4 a and the evaporation source 2.
is supported by the planetary jig 5 such that a vertical state in which a is substantially vertical is obtained, that is, the angle α between the line 9 connecting the holding surface 4a and the evaporation source 2 and the holding surface 4a is substantially a right angle. Have been.

The planetary jig 5 comprises a planetary dome 6 for supporting the holding plate 4 and a holder 7 for rotatably supporting the planetary dome 6, except that the shape of the planetary dome 6 is different from the conventional one shown in FIG. The configuration is the same as that of the device. That is, the planetary dome 6
The holding plate 4 is formed in a shape that supports the holding plate 4 so that a vertical state in which the holding surface 4a is substantially perpendicular to a line 9 connecting the holding surface 4a and the evaporation source 3 during rotation of the holding plate 4 is obtained.

Here, the center plate 6 of the planetary dome 6
a, and an extension plate 6b extending from the periphery of the center plate 6a in a state where the holding plate 4 is bent at a predetermined angle with respect to the center plate 6a. Is attached. The angle of the extension plate 6b with respect to the center plate 6a is, for example, held at a point when the holding plate 4 reaches the highest position during rotation with respect to a line 9 connecting the holding surface 4a of the holding plate 4 and the evaporation source 3. The angle is set such that a vertical state in which the surface 4a is substantially vertical is obtained.

The center plate 6a of the planetary dome 6
Are supported by the holder 7 so that the planetary dome 25 itself rotates in the direction of arrow A, for example. The holder 7 is provided so as to be rotatable around the vertical axis of the evaporation source 3, and the planetary dome 6 is rotated by the rotation of the holder 76 in the direction B, for example.
Orbit around.

The incident angle control means 8 is provided on the holding surface 4 of the holding plate 4.
This is for controlling the angle of incidence of the deposition with respect to a. In the present embodiment, the incident angle control means 8 includes the holding surface 4.
When a is in a vertical state, the deposit from the evaporation source 3 is held on the holding surface 4.
a, and a shield that blocks the deposition material from being deposited on the holding surface 4a when the holding surface 4a is not in the vertical state (hereinafter, the incident angle control means 8 is referred to as a shielding member 8). ).

Such a shield 8 is provided so as to surround the evaporation source 3, and allows the deposit from the evaporation source 3 to pass therethrough only when the holding surface 4a is in a vertical state.
Is formed in a shape having an opening 8a for allowing the light to enter. Here, for example, when the holding plate 4 reaches the highest position during rotation, a vertical state in which the holding surface 4a is substantially perpendicular to the line 9 connecting the holding surface 4a of the holding plate 4 and the evaporation source 3 is obtained. Since the holding plate 4 is arranged such that the shield 8 allows the deposition material from the evaporation source 3 to pass through and enter the holding surface 4a only in such a vertical state, an opening 8a is formed at the top. It is made of a cylindrical body and has a very simple structure provided so as to surround the evaporation source 3.

The shield 8 is installed in the chamber 2 so as to be detachable therefrom. When the shield 8 is mounted in the chamber 2, vertical deposition is performed. When the shield 8 is removed from the chamber 2, the vertical deposition is switched. Full-angle deposition is performed. Further, in the chamber 2, a film thickness meter 10 for measuring the film thickness of the deposition film on the deposition target substrate on which the deposition film is formed, which is held by the holding plate 4, is provided.

In the vapor deposition apparatus 1 configured as described above,
In a vertical state where the holding surface 4a is substantially perpendicular to the line 9 connecting the holding surface 4a and the evaporation source 3 while the holding plate 4 is rotating, the vapor deposition incident angle with respect to the holding surface 4a is substantially only a right angle. Only vertical deposition is performed on the substrate to be deposited held on the surface 4a. On the other hand, since the holding plate 4 is rotated by the planetary jig 5 so that the deposition incident angle of the deposition material becomes the full angle, full-angle deposition including the state where the deposition incident angle becomes substantially a right angle is performed on the substrate to be deposited.

Therefore, in the vapor deposition apparatus 1, it is possible to perform the vapor deposition by switching from the full-angle vapor deposition to the vertical vapor deposition simply by mounting the shield 8 in the chamber 2 and controlling the vapor incidence angle with respect to the holding surface 4a. Also, a shield 8 is provided from inside the chamber 2.
By simply removing, the deposition can be switched from vertical deposition to full-angle deposition. Therefore, full-width vapor deposition and vertical vapor deposition can be easily switched by an operation such as loading and unloading of the shield 8 into the chamber 2, so that only one vapor deposition apparatus 1 is required. As a result, when manufacturing a semiconductor device that performs both full-angle deposition and vertical deposition on the same semiconductor substrate, productivity can be improved. Further, the time and cost required for maintenance can be significantly reduced as compared with the conventional case where two vapor deposition devices are required.

FIGS. 2A to 2D are cross-sectional views of a principal part showing how a vertical vapor deposition is performed using the vapor deposition apparatus 1 of the above embodiment to form a vapor deposition film. In forming a deposited film, first, as shown in FIG. 2A, a silicon nitride film 12 is formed on a semiconductor substrate 11 which is a substrate to be deposited, and a resist 15 patterned in a photolithography process is applied to the silicon nitride film 12. Form on top.

Next, as shown in FIG. 2B, an opening 13 for exposing the surface of the semiconductor substrate 11 to the outside is formed in the silicon nitride film 12 by etching using the resist 15 as a mask.
To form After that, the semiconductor substrate 1 is
When vertical deposition is performed on the resist 5, as shown in FIG. 2C, the deposition film 14 is formed only on the upper surface of the resist 5 and the bottom of the opening 13.
Is formed. Therefore, thereafter, as shown in FIG. 4D, the resist 15 is removed, so that the deposition film 14 is formed only at the bottom of the opening 13.

As described above, according to the vapor deposition apparatus 1, vertical vapor deposition can be performed in addition to full-angle vapor deposition.
When a PN junction field effect transistor 1 is formed of a compound semiconductor substrate and used in a high frequency region using the compound semiconductor substrate, a vapor deposition film 14 can be formed only at the bottom of the opening 13 of the silicon nitride film 12. Therefore, the vapor deposition film 14 is formed on the side wall of the opening 13 of the silicon nitride film 12 and the upper surface of the silicon nitride film 12 as in the conventional case shown in FIG. Since the problem that a parasitic capacitance is formed does not occur, deterioration of device characteristics due to the formation of the parasitic capacitance can be prevented.

Further, by performing the vertical vapor deposition, the vapor deposition film 14 can be selectively formed only at a predetermined location such as only at the bottom of the opening 13.
After the formation of 4, there is no need to perform a lithography step and an etching step for leaving the vapor-deposited film 14 at a predetermined location. Therefore, the number of steps can be reduced accordingly. Therefore, the vapor deposition apparatus 1 is a very effective apparatus for manufacturing a semiconductor device having good device characteristics with high productivity.

In the above embodiment, the case is described in which the shield is formed of a cylindrical body having an opening at the top. However, when the holding surface of the holding plate is in the vertical state, the deposit from the evaporation source is applied to the holding surface. The shape is not limited to this shape, as long as the incident light is incident and the deposition from the deposit is prevented from entering the holding surface when the holding surface is not in the vertical state.

Although the planetary dome is composed of the center plate and the extension plate, a vertical state in which the holding surface is substantially perpendicular to the line connecting the holding surface and the evaporation source during rotation is obtained. If the holding plate can be supported as described above, it can be formed into various shapes such as a flat plate shape, a V-shape, and a spherical shape. Further, by adjusting the supporting angle of the planetary dome of the holder supporting the planetary dome, the holding plate can be supported on the planetary dome so that the vertical state can be obtained.

[0031]

As described above, according to the vapor deposition apparatus of the present invention, while the holding plate for holding the substrate to be deposited is rotating, the holding surface is substantially perpendicular to the line connecting the holding surface and the evaporation source. In this vertical state, vertical deposition can be performed on the substrate to be deposited held on the holding surface. In addition, since the holding plate is rotated by the planetary jig so that the deposition incident angle of the deposition material becomes a full angle, full-angle deposition including a state where the deposition incident angle becomes substantially a right angle can be performed on the substrate to be deposited. Further, since the apparatus is provided with the incident angle control means, it is possible to perform the evaporation by switching between the full-angle vapor deposition and the vertical vapor deposition by the incident angle control means. Therefore, full-width vapor deposition and vertical vapor deposition can be performed by one apparatus, so that productivity can be improved in manufacturing a semiconductor device that performs both full-angle vapor deposition and vertical vapor deposition on the same semiconductor substrate. Further, an effect that the time and cost required for maintenance can be significantly reduced as compared with the related art in which two vapor deposition devices are required is obtained.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing one embodiment of a vapor deposition apparatus according to the present invention.

FIGS. 2A to 2D are cross-sectional views of a principal part showing a state in which a vapor deposition is performed by performing vertical vapor deposition using the vapor deposition apparatus of the embodiment.

FIG. 3 is a schematic configuration diagram illustrating an example of a conventional vapor deposition apparatus that performs full-angle vapor deposition.

FIGS. 4A to 4C are cross-sectional views of a main part showing how to form a vapor deposition film using a conventional vapor deposition apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vapor deposition apparatus, 2 ... Chamber, 3 ... Evaporation source, 4 ... Holding plate, 4a ... Holding surface, 5 ... Planetary jig, 8 ... Shielding plate

Claims (3)

[Claims] An evaporation source provided in a chamber, and a plate material for holding a substrate to be deposited provided on a side of the chamber opposite to the evaporation source, and a holding surface for holding the substrate to be deposited is provided. A holding plate disposed toward the evaporation source, and supporting the holding plate, and rotating the holding plate such that a deposition incident angle of the evaporation material evaporated from the evaporation source with respect to a holding surface of the holding plate becomes a full angle. A planetary jig, wherein the holding plate is provided so as to obtain a vertical state in which the holding surface is substantially perpendicular to a line connecting the holding surface and the evaporation source during rotation. And an incident angle control unit for controlling an incident angle of the vapor deposition on the holding surface of the holding plate. 2. The apparatus according to claim 1, wherein the incident angle control unit causes the deposit from the evaporation source to be incident on the holding surface when the holding surface is in the vertical state, and the deposit is formed when the holding surface is not in the vertical state. 2. The vapor deposition apparatus according to claim 1, further comprising a shield that is removably installed in the chamber so as to block a deposit from the substrate from being incident on the holding surface. 3. 3. An opening that is provided so as to surround the evaporation source and that allows the deposition from the evaporation source to pass through and enter the holding surface only when the holding surface is in the vertical state. The vapor deposition apparatus according to claim 2, wherein the vapor deposition apparatus is formed in a shape having: