JP3979745B2 - Film forming apparatus and thin film forming method - Google Patents

Film forming apparatus and thin film forming method Download PDF

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JP3979745B2
JP3979745B2 JP10249299A JP10249299A JP3979745B2 JP 3979745 B2 JP3979745 B2 JP 3979745B2 JP 10249299 A JP10249299 A JP 10249299A JP 10249299 A JP10249299 A JP 10249299A JP 3979745 B2 JP3979745 B2 JP 3979745B2
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substrate
film
substrate holder
source
film forming
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JP2000297360A (en
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瞬 三上
秀行 清水
敏男 兼重
照男 渡辺
則雄 西村
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Futaba Corp
Ulvac Inc
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Futaba Corp
Ulvac Inc
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【０００１】
【発明の属する技術分野】
本発明は成膜装置の技術分野にかかり、特に、ＦＥＤ(Field Emission Display)の製造に用いられる真空蒸着装置に関する。
【０００２】
【従来の技術】
図４の符号１０１に、従来の真空蒸着装置の一例を示す。この真空蒸着装置１０１は、真空槽１０２と、蒸発源１０３と、基板ホルダー１０４とを有している。
蒸発源１０３は真空槽１０２の内部底面に配置されており、蒸発源１０３の上方には基板ホルダー１０４が配置されている。
【０００３】
予め基板ホルダー１０４に基板１１０を保持させて、基板１１０の表面を蒸発源１０３に対向させ、不図示の真空排気系で真空槽１０２内を真空排気した状態で、蒸発源１０３から蒸着材料を蒸発させる。
蒸発した蒸着材料は基板１１０の表面に到達し、蒸着材料からなる薄膜が基板１１０の表面に成膜される。
【０００４】
最近、表示装置として注目されているＦＥＤに用いられる電極基板を製造する際には、基板上に高アスペクト比の微小孔を形成する。この微小孔の底部にコーン形状のＭｏエミッタを蒸着法で形成する工程と、ゲート上に被着したＭｏを剥離するための剥離層もゲート上だけに形成するために底部に成膜しない工程とが必要になる。
【０００５】
微小孔の底部にエミッタを形成するには、基板表面に対してほぼ垂直に蒸着材料を入射させる必要があり、他方、微小孔の底部に成膜せずに、ゲート上だけに成膜するには、基板表面に対して斜め方向から蒸着材料を入射させる必要がある。
【０００６】
基板上に斜め方向と垂直方向の両方から蒸着材料を入射させることができる真空処理装置として、図５に示すような蒸着装置１１１が提案されている。
この蒸着装置１１１は、真空槽１１２と、蒸発源１１３と、基板ホルダー１１４とを有している。
蒸発源１１３は真空槽１１２の内部底面に配置されており、蒸発源１１３の上方には基板ホルダー１１４が対向して配置されている。
【０００７】
基板ホルダー１１４は、真空槽１１２の側壁から水平に突出した軸(図示せず)に取付られ、その軸を中心にして揺動できるように構成されており、水平な状態と、蒸発源１１３に対して傾いた状態とのいずれか一方をとることができる。
【０００８】
基板ホルダー１１４が傾いた状態を図５(ａ)に、水平な状態を図５(ｂ)に示す。図５(ａ)の基板ホルダー１１４が傾いた状態では、蒸着材料の基板１１０に対する入射角δ1が大きいため斜め方向に蒸着材料を入射させることができ、他方、図５(ｂ)の基板ホルダー１１４が水平な状態では、蒸着材料の基板１１０に対する入射角δ2が小さいため、ほぼ垂直方向に蒸着材料を入射させることができる。
【０００９】
近年微細化が進み、上述した微小孔も小さくなっている。このため、蒸着材料を微小孔の底面に確実に到達させるようにするには、蒸着材料を垂直方向に入射させる際の入射角δ2をできるだけ小さくする必要があり、基板１１０上で少なくとも入射角δ2が０°以上１０°以下の範囲に収まるようにしなければならない。
【００１０】
従来では基板１１０と蒸発源１１４との間の距離１５０を大きくとることで、入射角δ2を小さくしていたが、ＦＥＤに用いられる基板は大きいので、基板端部においても入射角δ2を小さくしようとすると、蒸発源１１４と基板１１０との距離１５０は非常に大きくなる。
【００１１】
一般に、蒸発源と基板との間の距離が大きくなると、成膜速度は小さくなる。この場合に蒸着材料を斜め方向から入射させると、垂直方向から入射させた場合に比して成膜速度がさらに小さくなる。従って、成膜に要する時間が長くなってしまい、蒸着装置の生産性が低下してしまうという問題が生じていた。
【００１２】
【発明が解決しようとする課題】
本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、垂直入射蒸着と斜め入射蒸着の両方をすることができ、かつ基板表面への成膜速度を大きくすることができる技術を提供することにある。
【００１３】
【課題を解決するための手段】
上記課題を解決するために、請求項１記載の発明は、真空槽と、前記真空槽内に設けられ、基板を保持する基板ホルダーと、前記基板ホルダーに対し、所定距離に配置された第１の成膜源と、前記基板ホルダーに対し、前記第１の成膜源よりも遠い位置に配置された第２の成膜源とを有し、前記基板ホルダーに保持された前記基板の表面と前記第１の成膜源とを結ぶ線分と、前記基板の表面の法線とが成す角度を前記基板ホルダーの傾き角度としたとき、前記基板ホルダーを傾けて前記傾き角度を変更する揺動装置が設けられたことを特徴とする。
請求項２記載の発明は、請求項１記載の成膜装置であって、前記揺動装置は、前記基板の表面に前記第１の成膜源によって第１の薄膜を形成する際の前記傾き角度を、前記基板の表面に前記第２の成膜源によって第２の薄膜を形成する際の前記傾き角度よりも大きくするように構成されたことを特徴とする。
請求項３記載の発明は、請求項１又は請求項２のいずれか１項記載の成膜装置であって、前記第１の成膜源は、前記第２の成膜源から前記基板ホルダーに向けて飛行する成膜物質を遮らない位置に配置されたことを特徴とする。
請求項４記載の発明は、請求項１乃至請求項３のいずれか１項記載の成膜装置であって、前記第２の成膜源は、前記真空槽内の下方に配置され、前記基板ホルダーは、前記第２の成膜源の上方に配置され、少なくとも前記第２の成膜源に対して水平な状態と、前記第１の成膜源に対して傾いた状態との両方をとることができるように構成されている。
請求項５記載の発明は、請求項１乃至請求項４のいずれか１項記載の成膜装置であって、前記第１、第２の成膜源内には第１、第２の金属材料がそれぞれ配置され、前記第１、第２の金属材料を加熱し、前記真空槽内に前記第１、第２の金属材料からなる蒸気を放出できるように構成されたことを特徴とする。
請求項６記載の発明は、請求項１乃至請求項５のいずれか１項記載の成膜装置であって、前記基板の表面の法線と平行な方向の中心軸線を回転中心にして前記基板ホルダーを回転させる回転装置が設けられている。
請求項７記載の発明は、真空槽と、前記真空槽内に配置された第１、第２の成膜源と基板ホルダーを有する成膜装置を用い、表面に微細孔を有する基板を前記基板ホルダーに保持させ、前記基板ホルダーを、中心軸線回りに回転させながら前記第１、第２の成膜源によって前記基板の前記表面に第１、第２の薄膜を形成する薄膜形成方法であって、前記基板ホルダーに対し、前記第１の成膜源よりも前記第２の成膜源を遠い位置に配置しておき、前記基板ホルダーに保持された前記基板の表面と前記第１の成膜源とを結ぶ線分と、前記基板の表面の法線とが成す角度を前記基板ホルダーの傾き角度としたとき、前記第１の薄膜の形成時には、前記基板ホルダーを傾け、前記第２の薄膜形成時よりも前記傾き角度を大きくすることを特徴とする。
請求項８記載の発明は、請求項７記載の薄膜形成方法であて、前記傾き角度を調整して前記微細孔の底面には前記第１の薄膜の原料を到達させず、前記第２の薄膜の原料を到達させて前記微細孔の底面に前記第２の薄膜を成長させる。
【００１４】
本発明の成膜装置によれば、第１、第２の成膜源が、加熱されることで第１、第２の金属材料の蒸気を真空槽内に放出する蒸発源である場合には、基板ホルダーを傾けた状態にして、第１の成膜源から第１の金属材料の蒸気を放出することにより、基板表面に斜め方向から第１の金属材料を入射させることができる。
【００１５】
他方、基板ホルダーを水平な状態にして、第２の成膜源から第２の金属材料の蒸気を放出することにより、基板表面に対する蒸着材料の入射角ができるだけ小さくするようにして、ほぼ垂直に蒸着材料を入射させることができる。
【００１６】
一般に、蒸発源と基板との間の距離が小さくなると、成膜速度は大きくなる。第１の成膜源は、第２の成膜源より基板ホルダーに近い位置に配置されているので、第１、第２の成膜源のそれぞれから、基板表面に垂直方向に第１、第２の金属材料を入射させると、第１の成膜源による成膜速度は、第２の成膜源による成膜速度よりも大きくなる。
【００１７】
このように、垂直方向で入射させる場合では、第１の成膜源の成膜速度は、第２の成膜源の成膜速度よりも大きい。斜め方向に入射する際の成膜速度は垂直方向に入射する際の成膜速度より小さくなるものの、第２の成膜源を用いて垂直方向から蒸着材料を入射させた場合の成膜速度に比して、大きくなることはあっても小さくなることはない。
【００１８】
従って、斜め方向に蒸着材料を入射させる場合の成膜速度が、垂直方向に入射させる場合の成膜速度よりも小さくなっていた従来と異なり、成膜に要する時間を短縮でき、蒸着装置の生産性を向上させることができる。
【００１９】
【発明の実施の形態】
以下で図面を参照し、本発明の実施形態について説明する。
図１の符号１に、本発明の実施形態の真空蒸着装置を示す。真空蒸着装置１は真空槽２と、第１、第２の蒸発源３1、３2と、基板ホルダー４とを有している。
【００２０】
第２の蒸発源３2は真空槽２の内部底面に配置され、第２の蒸発源３2の上方には板状の基板ホルダー４が配置されている。
基板ホルダー４は、真空槽２の側壁から水平に突出し、所定角度回転可能な軸(図示せず)に取り付られており、軸が所定角度回転することで、水平な状態と、第２の蒸発源３2に対して傾いた状態とのいずれか一方をとることができるようにされている。また、基板ホルダー４は、その法線方向の中心軸線６０を中心にして、回転できるようにされている。
【００２１】
基板ホルダー４の斜め下方には、第１の蒸着源３1が配置されている。第１の蒸着源３1と基板ホルダー４との距離５1は、第２の蒸着源３2と基板ホルダー４との距離５2に比して小さくなるようにされており、第１の蒸着源３1は第２の蒸発源３2より基板ホルダー４に近い位置に配置されている。ここでは、第１の蒸着源３1と基板ホルダー４との距離５1は、第２の蒸着源３2と基板ホルダー４との距離５2の半分以下にされているものとする。
【００２２】
第１、第２の蒸着源３1、３2には、それぞれ第１、第２の金属材料(Ａｌ、Ｍｏ)が配置されており、図示しない電子銃から電子ビームを各第１、第２の金属材料へ照射すると、第１、第２の金属材料が加熱されて蒸発し、その蒸気が真空槽２内に放出させることができるようにされている。
【００２３】
上述の真空蒸着装置１を用いて、ＦＥＤに用いられる電極基板を製造するには、図３(ａ)に示すように、予めガラスからなる基板１０の表面に、Ｎｂを蒸着で成膜後、フォトリソの手段で図示しないカソード導体にパターン化し、その表面にアモルファスシリコン層２２と、SiO2層と、図示しないＮｂ層とを順次積層した後に、フォトリソの手段でSiO2層とＮｂ層に複数の微小孔３０を形成し、ゲート電極２３を形成する。微小孔３０の底面には、アモルファスシリコン層２２が露出した状態になっている。
【００２４】
真空蒸着装置１では、まず、予め不図示の真空排気系で真空槽２内を真空状態にし、基板ホルダー４を水平な状態にしておく。この状態で、上述の基板１０を真空状態を維持しながら真空槽２内に運び入れ、図２(ａ)に示すように基板ホルダー４に保持させる。
【００２５】
その後、軸を所定角度回転させ、基板１０を第１の蒸発源３1と第２の蒸発源３2に対して所定角度傾ける。次いで、基板ホルダー４の法線方向の中心軸線６０を中心にして、基板１０を回転させながら、基板ホルダー４に近い第１の蒸発源３1に電子ビームを照射し、第１の金属材料を蒸発させると、第１の金属材料の蒸気は、図２(ｂ)に示すように基板表面に対して入射角δ1で入射する。この入射角δ1は大きく、第１の金属材料は基板表面に対して斜め方向から入射されることになる。ここでは入射角δ1が７５°程度であるものとする。このため第１の金属材料は、ゲート電極２３の表面には到達するが、微小孔３０の底部には到達できないので、ゲート電極２３の表面にのみ第１の金属材料が蒸着され、第１の金属膜２４が成膜される。
ゲート電極２３の表面に第１の金属膜２４が所定膜厚に形成されたら、電子ビームの照射を終了させる。
【００２６】
次いで、軸を所定角度回転させ、基板１０を水平状態にさせる。
この状態で、基板ホルダー４から遠い第２の蒸発源３2に電子ビームを照射すると、第２の蒸発源３2から第２の金属材料が蒸発する。蒸発した第２の金属材料は、図２(ｃ)に示すように基板表面に対し入射角δ2で入射される。
【００２７】
この入射角δ2は小さく、第２の金属材料は、ほぼ垂直に基板１０の表面に入射される。ここでは入射角δ2は１０°程度であるものとする。第２の金属材料は基板表面にほぼ垂直に入射されるので、第１の金属膜２４の表面に到達するだけでなく、微小孔３０内に入り、微小孔３０の底面から露出するアモルファスシリコン層２２にも到達し、図３(ｃ)に示すようにアモルファスシリコン層２２の表面には第２の金属材料からなるコーン状のエミッタ(以下でエミッタコーンと称する。)２５1が形成されるとともに、第１の金属膜２４の上には第２の金属膜２５2が形成される。
【００２８】
エミッタコーン２５1及び第２の金属膜２５2が所定膜厚に成膜されたら、電子ビームの照射を終了させ、真空雰囲気を維持したまま、基板１０を取り出す。そして、真空槽２から他の装置へ運ぶ。他の装置でエッチング処理がなされると、前記第１の金属膜２４が溶けて、ＦＥＤに用いられるカソード電極基板が完成する。
【００２９】
一般に、基板表面に斜め方向から蒸着材料が入射されるときの成膜速度は、垂直方向から蒸着材料が入射される場合の成膜速度に比して小さくなる。他方、蒸発源と基板との間の距離が小さくなると、成膜速度は大きくなることも知られている。このとき成膜速度は基板と蒸発源との間の距離の逆数の二乗に比例して大きくなる。
【００３０】
上述したように、第１の成膜源３1は、蒸着材料を基板表面に斜め方向に入射させており、このときの成膜速度は、蒸着材料を基板表面に垂直方向に入射させる場合に比して小さくなる。
【００３１】
しかし、基板１０と第１の蒸発源３1との間の距離５1は、第２の蒸着源３2と基板ホルダー４との距離５2よりも小さいので、第１の成膜源３1による成膜速度は、その分第２の成膜源３2による成膜速度よりも大きくなる。ここでは、基板１０と第１の蒸発源３1との間の距離５1は、第２の蒸着源３2と基板ホルダー４との距離５2の半分以下になっているので、第１の成膜源３1による成膜速度は、第２の成膜源３2による成膜速度の４倍以上になる。従って、第１の成膜源３1を用いて蒸着材料を基板表面に斜め方向に入射させる際の成膜速度は、第２の成膜源３2を用いて垂直方向から蒸着材料を入射させた場合の成膜速度に比して大きくなることはあっても、小さくなることはない。
【００３２】
従って、斜め方向に蒸着材料を入射させる場合の成膜速度が、垂直方向に入射させる場合の成膜速度よりもさらに小さくなっていた従来と異なり、成膜に要する時間が短くなるので、蒸着装置の生産性を向上させることができる。
【００３３】
なお、本実施形態では成膜装置を真空蒸着装置として説明したが本発明はこれに限らず、例えば第１、第２の成膜源をスパッタリングターゲットとして、スパッタリング装置を構成してもよい。
【００３４】
また、ＦＥＤに用いる電極基板の製造について説明したが、本発明はこれに限られるものではなく、蒸着材料を基板表面の垂直方向と斜め方向のいずれにも入射させることができる装置であればよい。
【００３５】
さらに、本実施形態では第１の金属材料をＡｌとし、第２の金属材料をＭｏとしているが、本発明の第１、第２の金属材料はこれに限られるものではない。
さらにまた、第１、第２の成膜源３1、３2に異なる金属材料を配置して、異なる材料の第１、第２の金属膜２４、２５を成膜しているが、本発明はこれに限らず、第１、第２の成膜源３1、３2に同一の金属材料を配置して、同じ材料からなる第１、第２の金属膜２４、２５を成膜してもよい。
【００３６】
【発明の効果】
成膜に要する時間を短縮して、成膜装置の生産性を向上させることができる。
【図面の簡単な説明】
【図１】本発明の一実施形態の真空蒸着装置を説明する断面図
【図２】(ａ)：本発明の一実施形態の真空蒸着装置の動作を説明する第１の断面図
(ｂ)：本発明の一実施形態の真空蒸着装置の動作を説明する第２の断面図
(ｃ)：本発明の一実施形態の真空蒸着装置の動作を説明する第３の断面図
【図３】(ａ)：本発明の一実施形態の蒸着工程を説明する第１の断面図
(ｂ)：本発明の一実施形態の蒸着工程を説明する第２の断面図
(ｃ)：本発明の一実施形態の蒸着工程を説明する第３の断面図
【図４】従来の真空蒸着装置を説明する断面図
【図５】(ａ)：従来の他の真空蒸着装置を説明する第１の断面図
(ｂ)：従来の他の真空蒸着装置を説明する第２の断面図
【符号の説明】
１……成膜装置 ２……真空槽 ３1……第１の蒸発源 ３2……第２の蒸発源 ４……基板ホルダー ５1……基板と第１の蒸発源との距離 ５2……基板と第２の蒸発源との距離 ６０……基板ホルダーの法線方向の中心軸線 δ1……第１の金属材料の基板表面への入射角 δ2……第２の金属材料の基板表面への入射角[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a technical field of a film forming apparatus, and more particularly to a vacuum evaporation apparatus used for manufacturing a field emission display (FED).
[0002]
[Prior art]
Reference numeral 101 in FIG. 4 shows an example of a conventional vacuum deposition apparatus. The vacuum evaporation apparatus 101 includes a vacuum chamber 102, an evaporation source 103, and a substrate holder 104.
The evaporation source 103 is disposed on the inner bottom surface of the vacuum chamber 102, and a substrate holder 104 is disposed above the evaporation source 103.
[0003]
The substrate 110 is held in advance by the substrate holder 104, the surface of the substrate 110 is opposed to the evaporation source 103, and the vapor deposition material is evaporated from the evaporation source 103 in a state where the vacuum chamber 102 is evacuated by an unillustrated evacuation system. Let
The evaporated vapor deposition material reaches the surface of the substrate 110, and a thin film made of the vapor deposition material is formed on the surface of the substrate 110.
[0004]
Recently, when manufacturing an electrode substrate used for an FED which has been attracting attention as a display device, a micropore having a high aspect ratio is formed on the substrate. A step of forming a cone-shaped Mo emitter on the bottom of the microhole by vapor deposition, and a step of not forming a film on the bottom to form a release layer for peeling Mo deposited on the gate only on the gate. Is required.
[0005]
In order to form the emitter at the bottom of the microhole, it is necessary to make the vapor deposition material enter substantially perpendicular to the substrate surface. On the other hand, the film is formed only on the gate without forming the film at the bottom of the microhole. Requires that the vapor deposition material be incident on the substrate surface from an oblique direction.
[0006]
A vapor deposition apparatus 111 as shown in FIG. 5 has been proposed as a vacuum processing apparatus capable of allowing a vapor deposition material to enter the substrate from both an oblique direction and a vertical direction.
The vapor deposition apparatus 111 includes a vacuum chamber 112, an evaporation source 113, and a substrate holder 114.
The evaporation source 113 is disposed on the inner bottom surface of the vacuum chamber 112, and a substrate holder 114 is disposed above the evaporation source 113 so as to face it.
[0007]
The substrate holder 114 is attached to a shaft (not shown) that protrudes horizontally from the side wall of the vacuum chamber 112, and is configured to be able to swing around the shaft. Either one of the tilted state can be taken.
[0008]
FIG. 5A shows a state in which the substrate holder 114 is tilted, and FIG. 5B shows a horizontal state. In the state in which the substrate holder 114 in FIG. 5A is inclined, since the incident angle δ 1 of the vapor deposition material with respect to the substrate 110 is large, the vapor deposition material can be incident in an oblique direction, while the substrate holder in FIG. In a state where 114 is horizontal, since the incident angle δ 2 of the vapor deposition material with respect to the substrate 110 is small, the vapor deposition material can be incident in a substantially vertical direction.
[0009]
In recent years, miniaturization has progressed, and the above-mentioned micropores have also become smaller. For this reason, in order to ensure that the vapor deposition material reaches the bottom surface of the minute hole, it is necessary to make the incident angle δ 2 when the vapor deposition material is incident in the vertical direction as small as possible, and at least the incident angle on the substrate 110. δ 2 must be within a range of 0 ° to 10 °.
[0010]
Conventionally, the incident angle δ 2 is reduced by increasing the distance 150 between the substrate 110 and the evaporation source 114. However, since the substrate used in the FED is large, the incident angle δ 2 is also increased at the substrate edge. In order to reduce the distance, the distance 150 between the evaporation source 114 and the substrate 110 becomes very large.
[0011]
In general, as the distance between the evaporation source and the substrate increases, the film formation rate decreases. In this case, when the vapor deposition material is incident from an oblique direction, the film formation rate is further reduced as compared with the case where the vapor deposition material is incident from the vertical direction. Therefore, the time required for film formation becomes long, and there has been a problem that productivity of the vapor deposition apparatus is lowered.
[0012]
[Problems to be solved by the invention]
The present invention was created to solve the above-described disadvantages of the prior art, and its purpose is to allow both normal incidence deposition and oblique incidence deposition, and to increase the deposition rate on the substrate surface. It is to provide a technology that can.
[0013]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a first aspect of the present invention is a vacuum chamber, a substrate holder that is provided in the vacuum chamber and holds a substrate, and is arranged at a predetermined distance from the substrate holder. a deposition source, with respect to the substrate holder, and the second possess a deposition source disposed at a position farther than the first deposition source, the surface of the substrate held by the substrate holder Swing that changes the tilt angle by tilting the substrate holder, where the tilt angle of the substrate holder is the angle formed by the line connecting the first film forming source and the normal of the surface of the substrate A device is provided .
Invention of Claim 2 is the film-forming apparatus of Claim 1 , Comprising : The said rocking | fluctuation apparatus WHEREIN: The said inclination when forming a 1st thin film with the said 1st film-forming source on the surface of the said board | substrate The angle is configured to be larger than the inclination angle when the second thin film is formed on the surface of the substrate by the second film forming source .
A third aspect of the present invention is the film forming apparatus according to the first or second aspect , wherein the first film forming source is supplied from the second film forming source to the substrate holder. It is characterized in that it is arranged at a position where it does not block the film-forming substance that flies toward it.
According to a fourth aspect of the present invention, there is provided the film formation apparatus according to any one of the first to third aspects , wherein the second film formation source is disposed below the vacuum chamber, and the substrate The holder is disposed above the second film formation source, and takes at least a state that is horizontal with respect to the second film formation source and a state that is inclined with respect to the first film formation source. It is configured to be able to.
According to a fifth aspect of the present invention, there is provided the film forming apparatus according to any one of the first to fourth aspects , wherein the first and second metal materials are contained in the first and second film forming sources. The first and second metal materials are arranged respectively so that the first and second metal materials can be heated and the vapor made of the first and second metal materials can be discharged into the vacuum chamber.
A sixth aspect of the present invention is the film forming apparatus according to any one of the first to fifth aspects, wherein the substrate is centered on a central axis in a direction parallel to a normal to the surface of the substrate. A rotating device for rotating the holder is provided.
The invention described in claim 7 uses a film forming apparatus having a vacuum chamber, first and second film forming sources and a substrate holder disposed in the vacuum chamber, and a substrate having a fine hole on the surface is used as the substrate. A thin film forming method in which first and second thin films are formed on the surface of the substrate by the first and second film forming sources while being held by a holder and rotating the substrate holder around a central axis. The second film formation source is disposed farther than the first film formation source with respect to the substrate holder, and the surface of the substrate held by the substrate holder and the first film formation are disposed. When the angle formed by the line segment connecting the source and the normal of the surface of the substrate is the tilt angle of the substrate holder, the substrate holder is tilted during the formation of the first thin film, and the second thin film is formed. The tilt angle is larger than that at the time of formation.
The invention according to claim 8 is the thin film forming method according to claim 7, wherein the inclination angle is adjusted so that the raw material of the first thin film does not reach the bottom surface of the fine hole, and the second thin film is formed. The second thin film is grown on the bottom surface of the fine hole.
[0014]
According to the film forming apparatus of the present invention, when the first and second film forming sources are evaporation sources that release the vapors of the first and second metal materials into the vacuum chamber by being heated. When the substrate holder is tilted and the vapor of the first metal material is emitted from the first film formation source, the first metal material can be incident on the substrate surface from an oblique direction.
[0015]
On the other hand, by making the substrate holder horizontal and releasing the vapor of the second metal material from the second film-forming source, the incident angle of the vapor deposition material with respect to the substrate surface is made as small as possible, so that it is almost vertical. A vapor deposition material can be incident.
[0016]
In general, when the distance between the evaporation source and the substrate is reduced, the deposition rate is increased. Since the first film-forming source is disposed at a position closer to the substrate holder than the second film-forming source, the first and second film-forming sources are perpendicular to the substrate surface from the first and second film-forming sources. When the second metal material is incident, the deposition rate by the first deposition source becomes higher than the deposition rate by the second deposition source.
[0017]
As described above, when the light is incident in the vertical direction, the film formation speed of the first film formation source is higher than the film formation speed of the second film formation source. Although the film formation speed when entering in the oblique direction is smaller than the film formation speed when entering in the vertical direction, the film formation speed when the vapor deposition material is incident from the vertical direction using the second film formation source. In comparison, it can be larger but not smaller.
[0018]
Therefore, unlike the conventional method in which the deposition rate when the deposition material is incident obliquely is smaller than the deposition rate when the deposition material is incident in the vertical direction, the time required for deposition can be shortened, and the deposition apparatus can be produced. Can be improved.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
Reference numeral 1 in FIG. 1 shows a vacuum deposition apparatus according to an embodiment of the present invention. The vacuum vapor deposition apparatus 1 includes a vacuum chamber 2, first and second evaporation sources 3 1 , 3 2, and a substrate holder 4.
[0020]
The second evaporation source 3 2 is disposed on the inner bottom surface of the vacuum chamber 2, and a plate-like substrate holder 4 is disposed above the second evaporation source 3 2 .
The substrate holder 4 protrudes horizontally from the side wall of the vacuum chamber 2 and is attached to a shaft (not shown) that can be rotated by a predetermined angle. it is to be able to take either the inclined state with respect to the evaporation source 3 2. Further, the substrate holder 4 is configured to be rotatable about a central axis 60 in the normal direction.
[0021]
The obliquely below the substrate holder 4, a first vapor deposition source 3 1 is disposed. Distance 5 1 between the first deposition source 3 1 and the substrate holder 4 is to be smaller than the distance 5 2 and the second deposition source 3 2 and the substrate holder 4, a first vapor deposition The source 3 1 is arranged closer to the substrate holder 4 than the second evaporation source 3 2 . Here, the distance 5 1 between the first deposition source 3 1 and the substrate holder 4 is assumed to be the following distance 5 2 halves of the second deposition source 3 2 and the substrate holder 4.
[0022]
The first and second vapor deposition sources 3 1 and 3 2 are respectively provided with first and second metal materials (Al, Mo), and an electron beam is emitted from an electron gun (not shown) to each of the first and second metal materials. When this metal material is irradiated, the first and second metal materials are heated and evaporated, and the vapor can be discharged into the vacuum chamber 2.
[0023]
In order to manufacture an electrode substrate used for FED using the above-described vacuum evaporation apparatus 1, as shown in FIG. 3A, after Nb is formed on the surface of the substrate 10 made of glass in advance by vapor deposition, A cathode conductor (not shown) is patterned by photolithography means, and an amorphous silicon layer 22, an SiO 2 layer, and an Nb layer (not shown) are sequentially laminated on the surface, and then a plurality of SiO 2 layers and Nb layers are formed by photolithography means. A microhole 30 is formed, and a gate electrode 23 is formed. The amorphous silicon layer 22 is exposed on the bottom surface of the minute hole 30.
[0024]
In the vacuum deposition apparatus 1, first, the inside of the vacuum chamber 2 is evacuated in advance by an unillustrated evacuation system, and the substrate holder 4 is placed in a horizontal state. In this state, the above-described substrate 10 is carried into the vacuum chamber 2 while maintaining a vacuum state, and is held by the substrate holder 4 as shown in FIG.
[0025]
Thereafter, the shaft is rotated by a predetermined angle, and the substrate 10 is tilted by a predetermined angle with respect to the first evaporation source 3 1 and the second evaporation source 3 2 . Then, it centered on the normal direction of the central axis 60 of the substrate holder 4, while rotating the substrate 10 is irradiated with an electron beam in a first evaporation source 3 1 closer to the substrate holder 4, the first metallic material When evaporated, the vapor of the first metal material enters the substrate surface at an incident angle δ 1 as shown in FIG. The incident angle δ 1 is large, and the first metal material is incident on the substrate surface from an oblique direction. Here, it is assumed that the incident angle δ 1 is about 75 °. For this reason, the first metal material reaches the surface of the gate electrode 23, but cannot reach the bottom of the microhole 30, so that the first metal material is deposited only on the surface of the gate electrode 23, and the first metal material is deposited. A metal film 24 is formed.
When the first metal film 24 is formed on the surface of the gate electrode 23 to a predetermined thickness, the electron beam irradiation is terminated.
[0026]
Next, the shaft is rotated by a predetermined angle to bring the substrate 10 into a horizontal state.
In this state, when the second evaporation source 3 2 far from the substrate holder 4 is irradiated with an electron beam, the second metal material evaporates from the second evaporation source 3 2 . The evaporated second metal material is incident on the substrate surface at an incident angle δ 2 as shown in FIG.
[0027]
The incident angle δ 2 is small, and the second metal material is incident on the surface of the substrate 10 substantially perpendicularly. Here, the incident angle δ 2 is assumed to be about 10 °. Since the second metal material is incident on the substrate surface substantially perpendicularly, the amorphous silicon layer not only reaches the surface of the first metal film 24 but also enters the microhole 30 and is exposed from the bottom surface of the microhole 30. also reached 22, with the surface of the amorphous silicon layer 22 is (referred to as the emitter cone below.) conical emitter of a second metallic material 25 1 is formed as shown in FIG. 3 (c) A second metal film 25 2 is formed on the first metal film 24.
[0028]
When the emitter cone 25 1 and the second metal film 25 2 are formed to a predetermined film thickness, the electron beam irradiation is terminated, and the substrate 10 is taken out while maintaining the vacuum atmosphere. And it conveys from the vacuum chamber 2 to another apparatus. When the etching process is performed by another apparatus, the first metal film 24 is melted to complete the cathode electrode substrate used for the FED.
[0029]
In general, the deposition rate when the deposition material is incident on the substrate surface from an oblique direction is smaller than the deposition rate when the deposition material is incident from the vertical direction. On the other hand, it is also known that the deposition rate increases as the distance between the evaporation source and the substrate decreases. At this time, the deposition rate increases in proportion to the square of the reciprocal of the distance between the substrate and the evaporation source.
[0030]
As described above, the first deposition source 3 1 is made incident obliquely on the substrate surface deposition material, the deposition speed at this time, the deposition material in the case where the incident in a direction perpendicular to the substrate surface It becomes smaller than that.
[0031]
However, since the distance 5 1 between the substrate 10 and the first evaporation source 3 1 is smaller than the distance 5 2 between the second vapor deposition source 3 2 and the substrate holder 4, the first film formation source 3 1. The film formation rate due to is higher than the film formation rate by the second film formation source 3 2 accordingly. Here, the distance 5 1 between the substrate 10 and the first evaporation source 3 1 is less than half of the distance 5 2 between the second vapor deposition source 3 2 and the substrate holder 4, so that the first The deposition rate by the deposition source 3 1 is four times or more the deposition rate by the second deposition source 3 2 . Accordingly, the deposition rate when the deposition material is incident on the substrate surface in an oblique direction using the first deposition source 3 1 is such that the deposition material is incident from the vertical direction using the second deposition source 3 2. In this case, the film forming speed may be larger than the film forming speed but may not be smaller.
[0032]
Therefore, since the deposition rate when the deposition material is incident in the oblique direction is further smaller than the deposition rate when the deposition material is incident in the vertical direction, the deposition time is shortened. Productivity can be improved.
[0033]
In the present embodiment, the film forming apparatus is described as a vacuum vapor deposition apparatus. However, the present invention is not limited to this, and the sputtering apparatus may be configured using, for example, the first and second film forming sources as sputtering targets.
[0034]
In addition, the manufacture of the electrode substrate used for the FED has been described, but the present invention is not limited to this, and any device that can cause the vapor deposition material to enter both the vertical direction and the oblique direction of the substrate surface may be used. .
[0035]
Furthermore, in the present embodiment, the first metal material is Al and the second metal material is Mo, but the first and second metal materials of the present invention are not limited to this.
Furthermore, different metal materials are arranged in the first and second film formation sources 3 1 and 3 2 to form the first and second metal films 24 and 25 made of different materials. The first and second metal films 24 and 25 made of the same material are formed by arranging the same metal material in the first and second film formation sources 3 1 and 3 2. Also good.
[0036]
【The invention's effect】
The time required for film formation can be shortened, and the productivity of the film formation apparatus can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a vacuum vapor deposition apparatus according to an embodiment of the present invention. FIG. 2A is a first cross-sectional view illustrating the operation of the vacuum vapor deposition apparatus according to an embodiment of the present invention.
(b): Second sectional view for explaining the operation of the vacuum vapor deposition apparatus of one embodiment of the present invention.
(c): Third sectional view for explaining the operation of the vacuum deposition apparatus according to one embodiment of the present invention. FIG. 3 (a): First sectional view for explaining the deposition step according to one embodiment of the present invention.
(b): Second sectional view for explaining the vapor deposition process of one embodiment of the present invention.
(c): Third sectional view for explaining the vapor deposition process of one embodiment of the present invention [FIG. 4] Cross sectional view for explaining a conventional vacuum vapor deposition apparatus [FIG. 5] (a): Another conventional vacuum vapor deposition apparatus First sectional view for explaining
(b): Second sectional view for explaining another conventional vacuum vapor deposition apparatus.
DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 2 ... Vacuum chamber 3 1 ... 1st evaporation source 3 2 ... 2nd evaporation source 4 ... Substrate holder 5 1 ... Distance between substrate and 1st evaporation source 5 2 …… Distance between substrate and second evaporation source 60 …… Center axis in the normal direction of substrate holder δ 1 …… An incident angle of the first metal material to the substrate surface δ 2 …… of the second metal material Incident angle to substrate surface

Claims (8)

真空槽と、
前記真空槽内に設けられ、基板を保持する基板ホルダーと、
前記基板ホルダーに対し、所定距離に配置された第１の成膜源と、
前記基板ホルダーに対し、前記第１の成膜源よりも遠い位置に配置された第２の成膜源とを有し、
前記基板ホルダーに保持された前記基板の表面と前記第１の成膜源とを結ぶ線分と、前記基板の表面の法線とが成す角度を前記基板ホルダーの傾き角度としたとき、
前記基板ホルダーを傾けて前記傾き角度を変更する揺動装置が設けられたことを特徴とする成膜装置。A vacuum chamber;
A substrate holder provided in the vacuum chamber and holding the substrate;
A first film-forming source disposed at a predetermined distance with respect to the substrate holder;
With respect to the substrate holder, it has a second deposition source is located farther than the first deposition source,
When an angle formed by a line segment connecting the surface of the substrate held by the substrate holder and the first film forming source and a normal line of the surface of the substrate is an inclination angle of the substrate holder,
A film forming apparatus, comprising: a swinging device that tilts the substrate holder to change the tilt angle . 前記揺動装置は、前記基板の表面に前記第１の成膜源によって第１の薄膜を形成する際の前記傾き角度を、前記基板の表面に前記第２の成膜源によって第２の薄膜を形成する際の前記傾き角度よりも大きくするように構成されたことを特徴とする請求項１記載の成膜装置。 The oscillating device defines the tilt angle when the first thin film source forms the first thin film on the surface of the substrate, and the second thin film by the second film source on the surface of the substrate. The film forming apparatus according to claim 1, wherein the film forming apparatus is configured to be larger than the inclination angle when forming the film. 前記第１の成膜源は、前記第２の成膜源から前記基板ホルダーに向けて飛行する成膜物質を遮らない位置に配置されたことを特徴とする請求項１又は請求項２のいずれか１項記載の成膜装置。The first deposition source of any of claims 1 or claim 2, characterized in that from the second deposition source arranged at a position not blocking the film forming material to fly toward the substrate holder The film forming apparatus according to claim 1 . 前記第２の成膜源は、前記真空槽内の下方に配置され、
前記基板ホルダーは、前記第２の成膜源の上方に配置され、少なくとも前記第２の成膜源に対して水平な状態と、前記第１の成膜源に対して傾いた状態との両方をとることができるように構成された請求項１乃至請求項３のいずれか１項記載の成膜装置。The second film formation source is disposed below the vacuum chamber,
The substrate holder is disposed above the second film formation source, and is at least both horizontal with respect to the second film formation source and inclined with respect to the first film formation source. The film-forming apparatus of any one of Claim 1 thru | or 3 comprised so that it could take. 前記第１、第２の成膜源内には第１、第２の金属材料がそれぞれ配置され、前記第１、第２の金属材料を加熱し、前記真空槽内に前記第１、第２の金属材料からなる蒸気を放出できるように構成されたことを特徴とする請求項１乃至請求項４のいずれか１項記載の成膜装置。First and second metal materials are respectively disposed in the first and second film forming sources, the first and second metal materials are heated, and the first and second metal materials are heated in the vacuum chamber. deposition apparatus according to any one of claims 1 to 4, characterized in that it is configured to emit steam made of a metal material. 前記基板の表面の法線と平行な方向の中心軸線を回転中心にして前記基板ホルダーを回転させる回転装置が設けられた請求項１乃至請求項５のいずれか１項記載の成膜装置。The film forming apparatus according to claim 1, further comprising: a rotating device that rotates the substrate holder about a central axis in a direction parallel to a normal line of the surface of the substrate. 真空槽と、A vacuum chamber;
前記真空槽内に配置された第１、第２の成膜源と基板ホルダーを有する成膜装置を用い、Using a film forming apparatus having first and second film forming sources and a substrate holder disposed in the vacuum chamber,
表面に微細孔を有する基板を前記基板ホルダーに保持させ、前記基板ホルダーを、中心軸線回りに回転させながら前記第１、第２の成膜源によって前記基板の前記表面に第１、第２の薄膜を形成する薄膜形成方法であって、A substrate having a fine hole on the surface is held by the substrate holder, and the first and second film forming sources are provided on the surface of the substrate by the first and second film forming sources while the substrate holder is rotated around a central axis. A thin film forming method for forming a thin film,
前記基板ホルダーに対し、前記第１の成膜源よりも前記第２の成膜源を遠い位置に配置しておき、The second film-forming source is disposed farther than the first film-forming source with respect to the substrate holder,
前記基板ホルダーに保持された前記基板の表面と前記第１の成膜源とを結ぶ線分と、前記基板の表面の法線とが成す角度を前記基板ホルダーの傾き角度としたとき、When the angle formed by the line segment connecting the surface of the substrate held by the substrate holder and the first film forming source and the normal of the surface of the substrate is the tilt angle of the substrate holder,
前記第１の薄膜の形成時には、前記基板ホルダーを傾け、前記第２の薄膜形成時よりも前記傾き角度を大きくすることを特徴とする薄膜形成方法。A method of forming a thin film, wherein the substrate holder is tilted when forming the first thin film, and the tilt angle is made larger than that when forming the second thin film. 前記傾き角度を調整して前記微細孔の底面には前記第１の薄膜の原料を到達させず、前記第２の薄膜の原料を到達させて前記微細孔の底面に前記第２の薄膜を成長させる請求項７記載の薄膜形成方法。The tilt angle is adjusted so that the raw material of the first thin film does not reach the bottom surface of the micro hole, and the second thin film material reaches the bottom surface of the micro hole to grow the second thin film on the bottom surface of the micro hole The thin film forming method according to claim 7.
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CN104004996B (en) * 2014-04-15 2016-01-13 京浜光学制品（常熟）有限公司 A kind of low temperature AF plated film evaporation unit

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