JP2000297360A - Film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition device capable of vapor-depositing a thin film of a prescribed film thickness in a short time even on a large glass substrate in particular as to a film forming device. SOLUTION: The inside of a vacuum tank 2 is provided with a substrate holder 4 and 1st and 2nd evaporating sources 31 and 32, and the 1st evaporating source 31 is arranged at the position closer to the substrate holder 4 than the 2nd evaporating source 32. In the case a vapor depositing material is made incident in an oblique direction by the 1st evaporating source 31, and the vapor depositing material is made incident in a vertical direction by the 2nd evaporating source 32 to form a thin film, since the film forming rate at the time of the film formation by the 1st evaporating source 31 is made high, the time required for the film formation can be reduced as the degree in which the 1st evaporating source 31 is closer to the substrate holder than the case of the 2nd evaporating source 32, and the productivity of the vapor depositing device improves.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of a film forming apparatus, and more particularly, to a vacuum deposition apparatus used for manufacturing an FED (Field Emission Display).

[0002]

2. Description of the Related Art An example of a conventional vacuum vapor deposition apparatus is shown at 101 in FIG. This vacuum deposition apparatus 101 is a vacuum chamber 1
02, an evaporation source 103, and a substrate holder 104. The evaporation source 103 is disposed on the inner bottom surface of the vacuum chamber 102, and the substrate holder 10 is located above the evaporation source 103.
4 are arranged.

A substrate 110 is held in advance by a substrate holder 104, the surface of the substrate 110 is opposed to the evaporation source 103, and the inside of the vacuum chamber 102 is evacuated by an evacuation system (not shown). Evaporate the material. The evaporated evaporation material reaches the surface of the substrate 110, and a thin film made of the evaporation material is formed on the surface of the substrate 110.

[0004] Recently, FEs have attracted attention as display devices.
When manufacturing the electrode substrate used for D, micro holes having a high aspect ratio are formed on the substrate. A step of forming a cone-shaped Mo emitter at the bottom of the minute hole by a vapor deposition method;
A step of not forming a film on the bottom is also required in order to form a release layer for removing Mo deposited on the gate only on the gate.

To form an emitter at the bottom of a micropore,
It is necessary to make the vapor deposition material incident on the substrate surface almost perpendicularly.On the other hand, to form the film only on the gate without forming the film on the bottom of the micro hole, the vapor deposition material is oblique to the substrate surface. Need to be incident.

[0006] As a vacuum processing apparatus capable of allowing a deposition material to enter a substrate from both an oblique direction and a vertical direction,
A vapor deposition device 111 as shown in FIG. 5 has been proposed. The vapor deposition device 111 includes a vacuum chamber 112 and an evaporation source 113.
And a substrate holder 114. Evaporation source 113
Is disposed on the inner bottom surface of the vacuum chamber 112, and the evaporation source 1
Above 13, a substrate holder 114 is arranged to face.

The substrate holder 114 is attached to a shaft (not shown) that projects horizontally from the side wall of the vacuum chamber 112, and is configured to be able to swing about the shaft. Either a state of being inclined with respect to the source 113 can be taken.

FIG. 5 shows a state in which the substrate holder 114 is tilted.
FIG. 5A shows a horizontal state. When the substrate holder 114 in FIG.
Since the incident angle δ ₁ with respect to 0 is large, the vapor deposition material can be incident in an oblique direction, while the incident angle δ ₂ of the vapor deposition material with respect to the substrate 110 is small when the substrate holder 114 in FIG. Therefore, the deposition material can be made to enter substantially vertically.

In recent years, miniaturization has progressed, and the above-mentioned fine holes have also become smaller. For this reason, in order to ensure that the deposition material reaches the bottom surface of the micropores, it is necessary to minimize the incident angle δ ₂ when the deposition material is incident vertically, and at least the incident angle on the substrate 110 [delta] ₂ must fit on a range of less than 10 ° 0 ° or more.

Conventionally, the incident angle δ ₂ was reduced by increasing the distance 150 between the substrate 110 and the evaporation source 114. However, since the substrate used for the FED is large, the incident angle is If you try to reduce the [delta] _2,
The distance 150 between the evaporation source 114 and the substrate 110 becomes very large.

Generally, as the distance between the evaporation source and the substrate increases, the film forming speed decreases. In this case, when the vapor deposition material is made incident from an oblique direction, the film forming speed is further reduced as compared with the case where the evaporation material is made incident from a vertical direction. Therefore, there has been a problem that the time required for film formation becomes longer and the productivity of the vapor deposition apparatus is reduced.

[0012]

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned disadvantages of the prior art, and has an object to perform both vertical incidence deposition and oblique incidence deposition, and It is an object of the present invention to provide a technique capable of increasing a film forming rate on a surface.

[0013]

According to a first aspect of the present invention, there is provided a film forming apparatus, comprising: a vacuum chamber; and a vacuum chamber provided in the vacuum chamber and capable of swinging. A substrate holder, a first film forming source disposed at a predetermined distance from the substrate holder, and a second film forming source disposed at a position farther from the substrate holder than the first film forming source. And a film source. The invention according to claim 2 is the film forming apparatus according to claim 1, wherein the first film forming source blocks a film forming material flying from the second film forming source toward the substrate holder. It is characterized in that it is arranged in a position where it does not exist. The invention according to claim 3 is the film forming apparatus according to claim 1 or 2, wherein the second film forming source is disposed below the inside of the vacuum chamber, and the substrate holder is configured to 2 above, so that it can take both a state horizontal to at least the second film formation source and a state inclined to the first film formation source. It is configured. According to a fourth aspect of the present invention, there is provided the film forming apparatus according to any one of the first to third aspects, wherein first and second metal materials are disposed in the first and second film forming sources, respectively. It is characterized in that the first and second metal materials are heated so that a vapor composed of the first and second metal materials can be discharged into the vacuum chamber.

According to the film forming apparatus of the present invention, the first and second film forming sources are evaporation sources for releasing the vapors of the first and second metal materials into the vacuum chamber when heated. In this case, the first metal material can be incident on the substrate surface from an oblique direction by emitting the vapor of the first metal material from the first film forming source while the substrate holder is tilted. .

On the other hand, with the substrate holder in a horizontal state,
By discharging the vapor of the second metal material from the second film formation source, the vapor deposition material can be made incident almost perpendicularly so that the incident angle of the vapor deposition material to the substrate surface is made as small as possible.

Generally, as the distance between the evaporation source and the substrate becomes smaller, the film forming rate becomes higher. Since the first film forming source is arranged at a position closer to the substrate holder than the second film forming source, the first and second film forming sources respectively receive the first and second film forming sources in the direction perpendicular to the substrate surface. When the second metal material is incident, the film forming speed by the first film forming source becomes higher than the film forming speed by the second film forming source.

As described above, when the light is incident in the vertical direction, the film forming speed of the first film forming source is higher than the film forming speed of the second film forming source. Although the film forming speed when entering in an oblique direction is smaller than the film forming speed when entering in a vertical direction,
Although the deposition rate is increased when the deposition material is incident from the vertical direction using the second deposition source, the deposition rate is increased but not decreased.

Therefore, unlike the conventional method in which the deposition rate when the deposition material is made incident in an oblique direction is smaller than the deposition rate when the deposition material is made to enter in a vertical direction, the time required for the deposition can be shortened. The productivity of the device can be improved.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. Reference numeral 1 in FIG. 1 shows a vacuum deposition apparatus according to an embodiment of the present invention. The vacuum evaporation apparatus 1 includes a vacuum chamber 2, first and second evaporation sources 3 ₁ , 3 _2, and a substrate holder 4.
And

[0020] The second evaporation source 3 ₂ disposed on the inner bottom surface of the vacuum chamber 2, the second upper evaporation source 3 ₂ plate-shaped substrate holder 4 is disposed. The substrate holder 4 holds the vacuum chamber 2
Protrudes from the side wall of the horizontal, has been Replacing a predetermined angle rotatable shaft (not shown), that the shaft rotates by a predetermined angle, and a horizontal state, tilted with respect to the second evaporation source 3 ₂ One of the two states. The substrate holder 4 is configured to be rotatable about a center axis 60 in the normal direction.

[0021] The obliquely below the substrate holder 4, a first vapor deposition source 3 ₁ is disposed. Distance 5 ₁ between the first deposition source 3 ₁ and the substrate holder 4 is to be smaller than the distance 5 ₂ and the second deposition source 3 ₂ and the substrate holder 4,
First deposition source 3 ₁ second evaporation source 3 ₂ from the substrate holder 4
It is located close to Here, the distance 5 ₁ between the first deposition source 3 ₁ and the substrate holder 4, a second vapor deposition source 3 ₂
It is assumed to be the following distance 5 ₂ halves of the substrate holder 4 and.

First and second metal materials (Al, Mo) are disposed in the first and second vapor deposition sources 3 ₁ and 3 ₂ , respectively. When the second metal material is irradiated, the first and second metal materials are heated and evaporated, and the vapor can be released into the vacuum chamber 2.

In order to manufacture an electrode substrate for use in an FED using the above-described vacuum evaporation apparatus 1, as shown in FIG. 3A, Nb is previously formed on the surface of a glass substrate 10 by evaporation. after film is patterned on the cathode conductors (not shown) by a means of photolithography, an amorphous silicon layer 22 on its surface, and the SiO ₂ layer, after sequentially laminating a Nb layer (not shown), the SiO ₂ layer and the Nb layer by means of photolithography Then, a plurality of micro holes 30 are formed, and a gate electrode 23 is formed. Micro hole 3
The amorphous silicon layer 22 is exposed on the bottom surface of the zero.

In the vacuum evaporation apparatus 1, first, the inside of the vacuum chamber 2 is evacuated by a vacuum evacuation system (not shown), and the substrate holder 4 is kept horizontal. In this state, the above-described substrate 1
0 is carried into the vacuum chamber 2 while maintaining the vacuum state, and is held by the substrate holder 4 as shown in FIG.

After that, the shaft is rotated by a predetermined angle,
Tilting predetermined angle relative to the first evaporation source 3 ₁ and the second evaporation source 3 _2. Then, it centered on the normal direction of the central axis 60 of the substrate holder 4, while rotating the substrate 10 is irradiated with an electron beam in a first evaporation source 3 ₁ closer to the substrate holder 4, the first metallic material evaporation, vapor of the first metal material is incident at an incident angle [delta] ₁ with respect to the substrate surface as shown in FIG. 2 (b). This angle of incidence δ ₁ is large, and the first metal material is incident on the substrate surface from an oblique direction. Here, it is assumed that the incident angle [delta] ₁ is about 75 °. For this reason, the first metal material reaches the surface of the gate electrode 23 but cannot reach the bottom of the minute hole 30, so that the first metal material is deposited only on the surface of the gate electrode 23, and the first metal material is deposited. A metal film 24 is formed. Gate electrode 23
When the first metal film 24 is formed to a predetermined thickness on the surface of
The irradiation of the electron beam is terminated.

Next, the shaft is rotated by a predetermined angle so that the substrate 10
To be horizontal. In this state, it is irradiated with an electron beam evaporation source 3 ₂ distant second from the substrate holder 4, a second
The second metallic material from the evaporation source 3 ₂ evaporates. The evaporated second metal material is incident on the substrate surface at an incident angle δ ₂ as shown in FIG.

The incident angle δ ₂ is small, and the second metal material is incident on the surface of the substrate 10 almost vertically. Here, it is assumed that the incident angle δ ₂ is about 10 °. Since the second metal material is substantially perpendicularly incident on the substrate surface, the amorphous silicon layer not only reaches the surface of the first metal film 24 but also enters the minute holes 30 and is exposed from the bottom surface of the minute holes 30. 22. As shown in FIG. 3C, a cone-shaped emitter made of a second metal material is formed on the surface of the amorphous silicon layer 22 (hereinafter, referred to as an emitter cone).
25 with ₁ is formed, the second metal film 25 ₂ is formed on the first metal film 24.

Emitter cone 25 ₁ and second metal film 2
After 5 ₂ is deposited to a predetermined thickness, to end the irradiation of the electron beam, while maintaining the vacuum atmosphere, the substrate is removed 10. Then, it is carried from the vacuum chamber 2 to another device. When the etching process is performed by another device, the first metal film 24 is melted, and the cathode electrode substrate used for the FED is completed.

In general, the deposition rate when the deposition material is incident on the substrate surface from an oblique direction is smaller than the deposition rate when the deposition material is incident from a vertical direction. On the other hand, it is also known that as the distance between the evaporation source and the substrate decreases, the film forming rate increases. At this time, the deposition rate increases in proportion to the square of the reciprocal of the distance between the substrate and the evaporation source.

[0030] As described above, the first deposition source 3 _1, the deposition material is made incident obliquely on the substrate surface, deposition speed at this time, incident perpendicularly to the deposition material to the substrate surface It becomes smaller than the case where it is performed.

[0031] However, since the substrate 10 a distance 5 ₁ between the first evaporation source 3 ₁ is less than the distance 5 ₂ and the second deposition source 3 ₂ and the substrate holder 4, a first film formation deposition rate by source 3 ₁ is larger than the film formation speed by correspondingly the second deposition source 3 _2. Here, since the substrate 10 a distance 5 ₁ between the first evaporation source 3 ₁ is equal to or less than the distance 5 ₂ halves of the second deposition source 3 ₂ and the substrate holder 4, the first deposition rate by deposition source 3 _1, quadrupled or more second deposition source 3 ₂ of film formation speed. Therefore, the film formation rate at the time of entering the evaporation material in an oblique direction to the substrate surface using the first deposition source 3 _1, is incident deposition material from the vertical direction using a second deposition source 3 ₂ Although it may be larger than the film forming speed in the case of the above, it does not become smaller.

Therefore, unlike the conventional case where the deposition rate when the vapor deposition material is incident obliquely is smaller than the deposition rate when the deposition material is incident vertically, the time required for the deposition is shorter. In addition, the productivity of the vapor deposition device can be improved.

In this embodiment, the film forming apparatus is described as a vacuum deposition apparatus. However, the present invention is not limited to this. For example, the first and second film forming sources may be used as sputtering targets.
You may comprise a sputtering apparatus.

Although the manufacture of the electrode substrate used in the FED has been described, the present invention is not limited to this, and the present invention is not limited to this. I just need.

Furthermore, in the present embodiment, the first metal material is Al and the second metal material is Mo, but the first and second metal materials of the present invention are not limited to this. Furthermore, different metal materials are arranged in the first and second film forming sources 3 ₁ and 3 ₂ to form the first and second metal films 24 and 25 of different materials. Is not limited to this,
The same metal material may be arranged in the first and second film forming sources 3 ₁ and 3 ₂ to form the first and second metal films 24 and 25 made of the same material.

[0036]

According to the present invention, the time required for film formation can be shortened, and the productivity of the film formation apparatus can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a vacuum evaporation apparatus according to an embodiment of the present invention.

FIG. 2A is a first cross-sectional view illustrating the operation of the vacuum deposition apparatus according to one embodiment of the present invention. FIG. 2B is a second cross-sectional view illustrating the operation of the vacuum deposition apparatus according to one embodiment of the present invention. Sectional view (c): Third section view for explaining the operation of the vacuum evaporation apparatus according to one embodiment of the present invention.

3A is a first cross-sectional view illustrating a vapor deposition step according to an embodiment of the present invention. FIG. 3B is a second cross-sectional view illustrating a vapor deposition step according to an embodiment of the present invention. FIG. 3 is a third cross-sectional view illustrating a vapor deposition step according to one embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a conventional vacuum deposition apparatus.

FIG. 5A is a first view illustrating another conventional vacuum evaporation apparatus.
(B): second sectional view for explaining another conventional vacuum evaporation apparatus

[Description of Signs] 1 ... Film forming device 2 ... Vacuum chamber 3₁.... First evaporation source
 3_Two... Second evaporation source 4... Substrate holder 5₁
... distance between substrate and first evaporation source 5_Two…… Substrate and No.
Distance from evaporation source No. 2 60 ... Normal direction of substrate holder
Central axis δ ₁..... of the first metal material on the substrate surface
Incident angle δ_Two... Injection of the second metal material onto the substrate surface
Corner

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideyuki Shimizu 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. Inventor Teruo Watanabe 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. (72) Inventor Norio Nishimura 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd.

Claims (4)

[Claims] 1. A vacuum chamber, a substrate holder provided in the vacuum chamber and configured to be swingable, a first film forming source arranged at a predetermined distance from the substrate holder, and the substrate A film forming apparatus, comprising: a second film forming source disposed at a position farther than the first film forming source with respect to the holder. 2. The apparatus according to claim 1, wherein the first film forming source is arranged at a position where it does not block a film forming material flying from the second film forming source toward the substrate holder. Film forming equipment. 3. The second film forming source is disposed below the inside of the vacuum chamber, and the substrate holder is disposed above the second film forming source, and at least the second film forming source is provided. 3. The apparatus according to claim 1, wherein the apparatus is configured to be able to take both a state horizontal with respect to the first direction and a state inclined with respect to the first film forming source.
A film forming apparatus as described in the above. 4. A first and a second film forming source in the first and second film forming sources.
Are arranged so as to heat the first and second metal materials and discharge the vapors of the first and second metal materials into the vacuum chamber. The film forming apparatus according to claim 1, wherein: