JP3080096B2 - Fabrication method of large area thin film - Google Patents
Fabrication method of large area thin filmInfo
- Publication number
- JP3080096B2 JP3080096B2 JP02154209A JP15420990A JP3080096B2 JP 3080096 B2 JP3080096 B2 JP 3080096B2 JP 02154209 A JP02154209 A JP 02154209A JP 15420990 A JP15420990 A JP 15420990A JP 3080096 B2 JP3080096 B2 JP 3080096B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- laser
- target
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は、大面積薄膜の作製方法に関する。より詳細
にはレーザ蒸着法を用いて大面積薄膜を作製する方法に
関する。Description: TECHNICAL FIELD The present invention relates to a method for producing a large-area thin film. More specifically, the present invention relates to a method for forming a large-area thin film using a laser deposition method.
従来の技術 薄膜の作製には、各種の方法が使用されるが、レーザ
蒸着法は、組成の制御がやり易く、成膜速度が速い等の
利点がある。また、一切の電磁場を必要としないので、
高品質の薄膜を作製するのに適した方法と考えられてい
る。2. Description of the Related Art Various methods are used for producing a thin film, and a laser vapor deposition method has advantages such as easy control of a composition and a high film formation rate. Also, because it does not require any electromagnetic field,
It is considered a suitable method for producing high quality thin films.
従来、レーザ蒸着法で薄膜を作製する場合は、内部を
高真空に排気可能で、任意の雰囲気ガスを導入できる成
膜室内に基板およびターゲットを配置し、成膜室外部に
配置したレーザ装置の発するレーザ光を光学手段により
誘導し、ターゲットに照射していた。Conventionally, when a thin film is produced by a laser deposition method, a substrate and a target are arranged in a film formation chamber capable of introducing an arbitrary atmospheric gas, which can be evacuated to a high vacuum, and a laser device arranged outside the film formation chamber. The emitted laser light was guided by optical means and was irradiated on the target.
発明が解決しようとする課題 しかしながら、レーザ光の照射面積は、装置の制約上
有限の大きさであり、成膜可能な薄膜の大きさもそれに
よって制限されていた。Problems to be Solved by the Invention However, the irradiation area of the laser beam is finite due to the limitations of the device, and the size of the thin film that can be formed is also limited thereby.
すなわち、レーザ蒸着法で薄膜を作製する場合には、
レーザ光をターゲットに照射した時に発生するロウソク
様の形状をしたプルームと呼ばれるプラズマ状態の先端
部で成膜を行う。これは、プルームの先端には、酸化さ
れた活性な成膜粒子が多く存在するため、この部分で成
膜を行うと特性の良好な薄膜が得られるためである。と
ころが、プルームの先端は、非常に微小であるため、従
来、レーザ蒸着法で作製された薄膜は、膜厚の分布が大
きくかつ膜質の分布も顕著であった。That is, when producing a thin film by the laser deposition method,
Film formation is performed at the tip of a plasma state called a plume having a candle-like shape generated when a target is irradiated with laser light. This is because a large amount of oxidized active film-forming particles are present at the tip of the plume, and a film having good characteristics can be obtained by forming a film in this portion. However, since the tip of the plume is very small, a thin film conventionally produced by a laser deposition method has a large film thickness distribution and a remarkable film quality distribution.
そこで本発明の目的は、レーザ蒸着法の短所である小
面積不均一成膜の問題を解決し、レーザ蒸着法で、大面
積且つ膜厚および膜質分布の少ない薄膜を作製する方法
を提供することにある。Accordingly, an object of the present invention is to solve the problem of non-uniform film formation in a small area, which is a disadvantage of the laser vapor deposition method, and to provide a method for producing a thin film having a large area and a small film thickness and film quality distribution by the laser vapor deposition method. It is in.
課題を解決するための手段 本発明に従うと、所定の反応ガス雰囲気下でターゲッ
トにレーザ光を照射してプラズマを発生させ、基板を前
記ターゲットに対向して前記プラズマの先端が接触する
位置に配置し、この基板上に薄膜を堆積させて作製する
レーザ蒸着法により薄膜を作製する方法において、前記
基板を少なくとも異なる２方向に変位させ、前記基板の
所定の領域に均一に薄膜が形成されるように蒸着を行う
ことを特徴とする大面積薄膜の作製方法が提供される。Means for Solving the Problems According to the present invention, a plasma is generated by irradiating a target with laser light in a predetermined reaction gas atmosphere, and a substrate is disposed at a position where the front end of the plasma is in contact with the target. Then, in the method of producing a thin film by a laser vapor deposition method of depositing and producing a thin film on the substrate, the substrate is displaced in at least two different directions so that the thin film is uniformly formed in a predetermined region of the substrate. And a method for producing a large-area thin film, characterized by performing vapor deposition.
作用 本発明の方法は、成膜室内の基板を変位させ、基板上
の薄膜が主に堆積する部位を変えながら、蒸着を行うと
ころにその主要な特徴がある。ターゲットのレーザ光が
照射された位置には、その上側にプルームといわれる活
性な成膜粒子の集まりであるプラズマが発生し、その先
端付近で最も効率よい反応が起こる。通常レーザ蒸着法
では、プルームの先端が接するような位置に基板を配置
するが、その場合、基板のプルームの先端に接している
部分の近傍の微小な範囲にのみ薄膜が形成される。本発
明の方法では、基板を変位させて、基板のプルームに接
する部分を変えて大きい面積の薄膜を成膜する。Operation The method of the present invention has a main feature in that a substrate in a film formation chamber is displaced and vapor deposition is performed while changing a portion where a thin film on the substrate is mainly deposited. Plasma, which is a collection of active film-forming particles, called a plume, is generated above the target at the position irradiated with the laser beam, and the most efficient reaction occurs near the tip. Normally, in the laser vapor deposition method, the substrate is arranged at a position where the tip of the plume is in contact with the substrate. In this case, a thin film is formed only in a minute range near the portion of the substrate contacting the tip of the plume. In the method of the present invention, a large-area thin film is formed by displacing a substrate and changing a portion of the substrate in contact with a plume.
レーザ蒸着法では、通常レーザ装置の発するレーザ光
をレンズ等により集光し、ミラー等の光学手段で誘導し
て照射する。本発明の方法では、例えば、基板をXYステ
ージに搭載して、適当な経路に沿って変位させる。本発
明の方法では、レーザ光のターゲットへの入射角は常に
一定であり、基板の位置により成膜条件が異なるような
ことがない。また、本発明の方法では、ターゲットの一
部だけが消耗することを防ぐためにターゲットは回転さ
せて使用することが好ましいが、その場合でも、ターゲ
ット表面の位置により、照射されるレーザ光のエネルギ
密度が異なるようなことがなく、ターゲットの位置によ
り、成膜条件が変化することがない。In the laser vapor deposition method, a laser beam emitted from a laser device is generally condensed by a lens or the like, and is guided and irradiated by an optical means such as a mirror. In the method of the present invention, for example, the substrate is mounted on an XY stage and displaced along an appropriate path. In the method of the present invention, the angle of incidence of the laser beam on the target is always constant, and the film formation conditions do not differ depending on the position of the substrate. Further, in the method of the present invention, it is preferable that the target is used while being rotated in order to prevent a part of the target from being consumed. However, even in such a case, the energy density of the laser light to be irradiated depends on the position of the target surface. Are not different, and the film forming conditions do not change depending on the position of the target.
以下、本発明を実施例によりさらに詳しく説明する
が、以下の開示は本発明の単なる実施例に過ぎず、本発
明の技術的範囲を何ら制限するものではない。Hereinafter, the present invention will be described in more detail with reference to examples. However, the following disclosure is merely an example of the present invention, and does not limit the technical scope of the present invention.
実施例 第１図に本発明の方法を実施するレーザ蒸着装置の一
例を示す。第１図のレーザ蒸着装置では、レーザ装置10
で発生され、集光レンズ９を通ったレーザ光はチャンバ
１のレーザ入射窓７に入射し、チャンバ１内のターンテ
ーブル11に搭載されている原料ターゲット５を照射す
る。ターンテーブル11はモータ14により、任意の回転速
度で回転させることが可能である。チャンバ１の内部は
高真空に排気可能で、XYステージ12に搭載された基板ホ
ルダ３に基板２がターゲット５に対向するように固定さ
れている。基板ホルダ３内には、基板２を加熱するヒー
タ４が備えられている。また、チャンバ１内に酸素を含
むガスを供給するノズル６が備えられている。本実施例
の装置では、レーザ装置10はパルスレーザ光を発振す
る。このパルスに対応して、制御装置13が、XYステージ
12に制御信号を送る。XYステージ12は、この制御信号に
基づきパルス毎に基板２を変位させて、パルスレーザ光
がターゲット５を照射したときに発生するプルームの先
端が１パルスごとに、基板の異なる部位に接するように
する。Embodiment FIG. 1 shows an example of a laser vapor deposition apparatus for carrying out the method of the present invention. In the laser vapor deposition apparatus shown in FIG.
The laser light generated by the laser beam and passing through the condenser lens 9 enters the laser incident window 7 of the chamber 1 and irradiates the raw material target 5 mounted on the turntable 11 in the chamber 1. The turntable 11 can be rotated by the motor 14 at an arbitrary rotation speed. The inside of the chamber 1 can be evacuated to a high vacuum, and the substrate 2 is fixed to the substrate holder 3 mounted on the XY stage 12 so that the substrate 2 faces the target 5. A heater 4 for heating the substrate 2 is provided in the substrate holder 3. Further, a nozzle 6 for supplying a gas containing oxygen into the chamber 1 is provided. In the device of the present embodiment, the laser device 10 oscillates pulsed laser light. In response to this pulse, the control device 13
Send control signal to 12. The XY stage 12 displaces the substrate 2 for each pulse based on the control signal so that the tip of a plume generated when the pulsed laser light irradiates the target 5 contacts a different portion of the substrate for each pulse. I do.
上記のレーザ蒸着装置を使用し、本発明の方法で、Y1
Ba2Cu3O7-X酸化物超電導薄膜を作製した。基板２には、
MgO単結晶基板およびSrTiO3単結晶基板を用い、基板温
度は650℃から750℃とした。ターゲット５には、直径2c
mのY1Ba2Cu3O7-Xの焼結体を用いた。また、基板２とタ
ーゲット５間の距離は7cmとした。チャンバ１の内部を
１×10-6Torrに排気したのち酸素ガスを導入し100mTorr
にした。Using the laser vapor deposition apparatus described above, Y 1
Ba 2 Cu 3 O 7-X oxide superconducting thin film was prepared. Substrate 2 has
An MgO single crystal substrate and a SrTiO 3 single crystal substrate were used, and the substrate temperature was 650 ° C. to 750 ° C. Target 5 has a diameter of 2c
A sintered body of m Y 1 Ba 2 Cu 3 O 7-X was used. The distance between the substrate 2 and the target 5 was 7 cm. After evacuating the inside of the chamber 1 to 1 × 10 −6 Torr, oxygen gas was introduced and 100 mTorr
I made it.
レーザは、波長193nmのエキシマレーザを使用し、レ
ーザ出力は3.5J/cm2、レーザ光の照射面積を２×4mm2と
し、パルス周波数を5Hzとした。The laser used was an excimer laser having a wavelength of 193 nm, the laser output was 3.5 J / cm 2 , the irradiation area of the laser light was 2 × 4 mm 2 , and the pulse frequency was 5 Hz.
制御装置13によりXYステージ12上の基板２を変位さ
せ、基板２の３×3cm2の領域をプルームが走査するよう
にした。また、ターゲット５は、1.5/秒で回転させた。
第２図に、本実施例で基板２にプルームが接した位置の
軌跡を示す。The control device 13 displaces the substrate 2 on the XY stage 12 so that the plume scans a 3 × 3 cm 2 area of the substrate 2. The target 5 was rotated at 1.5 / sec.
FIG. 2 shows the trajectory of the position where the plume contacts the substrate 2 in this embodiment.
上記の条件で、30分間成膜を行ない、得られた酸化物
超電導薄膜の膜厚分布と超電導特性の測定を行なった。
その結果、本発明の方法で作製した酸化物超電導薄膜の
膜厚分布は、35×35mm2の範囲で±10％であった。一
方、他の成膜条件は等しくして、基板を変位させない従
来の方法の場合の膜厚分布は10×10mm2の範囲で±10％
であった。本発明の方法で作製した酸化物超電導薄膜の
臨界温度と膜厚の測定結果を、第１表に示す。Under the above conditions, a film was formed for 30 minutes, and the thickness distribution and superconductivity of the obtained oxide superconducting thin film were measured.
As a result, the thickness distribution of the oxide superconducting thin film produced by the method of the present invention was ± 10% in a range of 35 × 35 mm 2 . On the other hand, the film thickness distribution in the case of the conventional method in which the other film forming conditions are equal and the substrate is not displaced is ± 10% in the range of 10 × 10 mm 2.
Met. Table 1 shows the measurement results of the critical temperature and the film thickness of the oxide superconducting thin film produced by the method of the present invention.
発明の効果 以上説明したように本発明に従うと、従来よりも大面
積で膜厚分布の少ない薄膜を作製することが可能であ
る。これは、本発明の方法に独特な、基板を変位させて
レーザ蒸着を行なう効果である。 Effects of the Invention As described above, according to the present invention, it is possible to produce a thin film having a larger area and a smaller film thickness distribution than the conventional one. This is an effect of performing laser deposition by displacing the substrate, which is unique to the method of the present invention.
第１図は、本発明の方法を実現するレーザ蒸着装置の一
例の概略図である。 第２図は、本実施例で基板にプルームが接した位置の軌
跡を示すものである。 〔主な参照番号〕 １……チャンバ、２……基板、 ３……基板ホルダ、４……ヒータ、 ５……ターゲット、６……ノズル、 ７……入射窓、 ８……ミラー、 ９……集光レンズ、 10……レーザ装置、 11……ターンテーブル、 12……XYステージ、 13……制御装置FIG. 1 is a schematic view of an example of a laser vapor deposition apparatus for realizing the method of the present invention. FIG. 2 shows the locus of the position where the plume contacts the substrate in the present embodiment. [Main Reference Numbers] 1... Chamber 2... Substrate 3... Substrate Holder 4. Heater 5... Target 6... Nozzle 7. ... Condenser lens, 10 ... Laser device, 11 ... Turntable, 12 ... XY stage, 13 ... Control device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 太田 進啓 兵庫県伊丹市昆陽北１丁目１番１号 住 友電気工業株式会社伊丹製作所内 (72)発明者 藤森 直治 兵庫県伊丹市昆陽北１丁目１番１号 住 友電気工業株式会社伊丹製作所内 (56)参考文献 特開 平１−177367（ＪＰ，Ａ) 特開 平２−88409（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinkei Ota 1-1-1, Koyokita, Itami-shi, Hyogo Prefecture Itami Works, Sumitomo Electric Industries, Ltd. (72) Inventor Naoji Fujimori 1, Kunyokita, Itami-shi, Hyogo No. 1-1, Sumitomo Electric Industries, Ltd. Itami Works (56) References JP-A-1-177367 (JP, A) JP-A-2-88409 (JP, A)
Claims (1)
ーザ光を照射してプラズマを発生させ、基板を前記ター
ゲットに対向して前記プラズマの先端が接触する位置に
配置し、この基板上に薄膜を堆積させて作製するレーザ
蒸着法により薄膜を作製する方法において、前記基板を
少なくとも異なる２方向に変位させ、前記基板の所定の
領域に均一に薄膜が形成されるように蒸着を行うことを
特徴とする大面積薄膜の作製方法。1. A plasma is generated by irradiating a target with laser light in a predetermined reaction gas atmosphere, and a substrate is disposed at a position where the front end of the plasma contacts the target and a thin film is formed on the substrate. In the method of producing a thin film by a laser vapor deposition method, the substrate is displaced in at least two different directions, and vapor deposition is performed so that the thin film is uniformly formed in a predetermined region of the substrate. Method for producing a large area thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02154209A JP3080096B2 (en) | 1990-06-13 | 1990-06-13 | Fabrication method of large area thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02154209A JP3080096B2 (en) | 1990-06-13 | 1990-06-13 | Fabrication method of large area thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0445263A JPH0445263A (en) | 1992-02-14 |
| JP3080096B2 true JP3080096B2 (en) | 2000-08-21 |
Family
ID=15579232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02154209A Expired - Fee Related JP3080096B2 (en) | 1990-06-13 | 1990-06-13 | Fabrication method of large area thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3080096B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3255469B2 (en) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | Laser thin film forming equipment |
| ES2325894B1 (en) * | 2006-02-24 | 2010-10-28 | Universidad De Cadiz | METHOD AND APPARATUS FOR THE MANUFACTURE OF DIFFACTIVE OPTICAL ELEMENTS. |
| ES2299335B2 (en) * | 2006-03-09 | 2010-10-13 | Universidad De Cadiz | METHOD FOR THE MANUFACTURE OF OPTICAL STRUCTURES WITH PURELY REFRACTIVE FUNCTIONALITY. |
-
1990
- 1990-06-13 JP JP02154209A patent/JP3080096B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0445263A (en) | 1992-02-14 |
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