JPH1138206A - Production of elliptical gradation nd filter - Google Patents
Production of elliptical gradation nd filterInfo
- Publication number
- JPH1138206A JPH1138206A JP20531297A JP20531297A JPH1138206A JP H1138206 A JPH1138206 A JP H1138206A JP 20531297 A JP20531297 A JP 20531297A JP 20531297 A JP20531297 A JP 20531297A JP H1138206 A JPH1138206 A JP H1138206A
- Authority
- JP
- Japan
- Prior art keywords
- filter substrate
- thin film
- vapor deposition
- filter
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、楕円形グラデーシ
ョンＮＤフィルタの製造方法、特にその金属薄膜を真空
蒸着法により形成する方法に関するものである。The present invention relates to a method of manufacturing an elliptical gradation ND filter, and more particularly to a method of forming a metal thin film by vacuum evaporation.
【０００２】[0002]
【従来の技術】一般に、レンズを透過した照明光は、光
軸上においては明るいが光軸から離れるにしたがって徐
々に暗くなる。このため従来より、グラデーションＮＤ
フィルタを用いることにより、照明光の明るさの均一化
を図る工夫がなされている。図６に示すように、このグ
ラデーションＮＤフィルタ１００は、フィルタ基板１０
６上に金属薄膜１０８が中心部から外周部に向かって透
過率が無段階に高くなるように形成されたＮＤフィルタ
であって、上記金属薄膜１０８は一般に真円形状に形成
されている。2. Description of the Related Art Generally, illumination light transmitted through a lens is bright on the optical axis, but gradually becomes darker as the distance from the optical axis increases. For this reason, conventionally, gradation ND
A device has been devised to make the brightness of the illumination light uniform by using a filter. As shown in FIG. 6, the gradation ND filter 100 includes a filter substrate 10
6 is an ND filter in which the metal thin film 108 is formed such that the transmittance increases steplessly from the center to the outer periphery, and the metal thin film 108 is generally formed in a perfect circular shape.
【０００３】近年、横長のブラウン管が多く用いられる
ようになってきているが、このようなブラウン管と対向
する位置にグラデーションＮＤフィルタを配置してその
ブラウン管からの光の明るさを均一化しようとする場合
には、従来のような真円形グラデーションＮＤフィルタ
ではなく、ブラウン管形状に近い楕円形グラデーション
ＮＤフィルタを用いるのが好ましい。In recent years, a horizontally long cathode ray tube has been widely used, but a gradation ND filter is arranged at a position facing the cathode ray tube to make the brightness of light from the cathode ray tube uniform. In such a case, it is preferable to use an elliptical gradation ND filter having a shape close to a cathode ray tube, instead of a conventional perfect circular gradation ND filter.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、楕円形
グラデーションＮＤフィルタを、真円形グラデーション
ＮＤフィルタの製造方法と同じ方法で製造することは困
難である。However, it is difficult to manufacture an elliptical gradation ND filter by the same method as that for producing a perfect circular gradation ND filter.
【０００５】すなわち、真円形グラデーションＮＤフィ
ルタは、一般に図７に示すような真空蒸着法により形成
される。この真空蒸着法は、真空雰囲気中において、フ
ィルタ基板１０６および所定のマスキングパターンが形
成されたマスク板１０４を、蒸着源１０２側にマスク板
１０４が位置するようにして平行に近接配置し、フィル
タ基板１０６を回転させた状態で、蒸着源１０２を蒸発
させることにより、フィルタ基板１０６上に真円形の金
属薄膜１０８を蒸着形成するようになっている。That is, a perfect circular gradation ND filter is generally formed by a vacuum evaporation method as shown in FIG. In this vacuum deposition method, a filter substrate 106 and a mask plate 104 on which a predetermined masking pattern is formed are placed in parallel and close to each other in a vacuum atmosphere such that the mask plate 104 is positioned on the side of the deposition source 102. By evaporating the evaporation source 102 while rotating the 106, a perfectly circular metal thin film 108 is formed on the filter substrate 106 by evaporation.
【０００６】この真空蒸着法では、フィルタ基板１０６
上に形成される上記マスキングパターンの投影像（図６
に２点鎖線で示す投影像Ｉ′）が該フィルタ基板１０６
に対して相対回転して濃度が徐変する金属薄膜１０８が
形成されるので、該金属薄膜１０８を真円形以外の形状
に蒸着形成することはできない。本発明は、このような
事情に鑑みてなされたものであって、厚みが徐々に変化
する楕円形の金属薄膜を真空蒸着法により精度良く形成
することができる楕円形グラデーションＮＤフィルタの
製造方法を提供することを目的とするものである。In this vacuum deposition method, the filter substrate 106
The projected image of the above masking pattern formed on
A projection image I ′) indicated by a two-dot chain line
Therefore, the metal thin film 108 whose concentration gradually changes due to relative rotation is formed, so that the metal thin film 108 cannot be formed by vapor deposition in a shape other than a perfect circle. The present invention has been made in view of such circumstances, and a method of manufacturing an elliptical gradation ND filter that can accurately form an elliptical metal thin film having a gradually changing thickness by a vacuum deposition method. It is intended to provide.
【０００７】[0007]
【課題を解決するための手段】本発明に係る楕円形グラ
デーションＮＤフィルタの製造方法は、フィルタ基板お
よびマスク板の配置に工夫を施すとともに、フィルタ基
板ではなくマスク板を回転させて蒸着を行うようにする
ことにより、上記目的達成を図るものである。A method of manufacturing an elliptical gradation ND filter according to the present invention is designed so that the arrangement of the filter substrate and the mask plate is devised, and the mask plate is rotated instead of the filter substrate for vapor deposition. By doing so, the above object is achieved.
【０００８】すなわち、本発明は、フィルタ基板上に略
楕円形の金属薄膜が中心部から外周部に向かって透過率
が無段階に高くなるように形成された楕円形グラデーシ
ョンＮＤフィルタの製造方法において、前記金属薄膜を
真空蒸着法により形成する方法であって、真空雰囲気内
において、前記フィルタ基板を、蒸着源の蒸発飛来方向
と直交する平面に対して所定角度傾斜させて固定配置す
るとともに、所定のマスキングパターンが形成されたマ
スク板を、前記フィルタ基板よりも前記蒸着源側におい
て該フィルタ基板と所定角度をなすように配置して回転
させ、この状態で、前記蒸着源を蒸発させて前記フィル
タ基板上に略楕円形の金属薄膜を蒸着形成し、該金属薄
膜の中心濃度が所要濃度の約１／２になった時点で前記
フィルタ基板を１８０°回転させ、その後、前記蒸着源
を再度蒸発させて前記中心濃度が所要濃度になるように
金属薄膜を蒸着形成することを特徴とするものである。That is, the present invention relates to a method of manufacturing an elliptical gradation ND filter in which a substantially elliptical metal thin film is formed on a filter substrate such that the transmittance increases steplessly from the center to the outer periphery. A method in which the metal thin film is formed by a vacuum deposition method, wherein the filter substrate is fixedly disposed at a predetermined angle with respect to a plane orthogonal to a direction in which a vapor deposition source evaporates in a vacuum atmosphere. The mask plate on which the masking pattern is formed is arranged and rotated so as to form a predetermined angle with the filter substrate on the vapor deposition source side with respect to the filter substrate, and in this state, the vapor deposition source is evaporated to form the filter. An approximately elliptical metal thin film is formed on the substrate by vapor deposition, and when the center concentration of the metal thin film becomes about 1/2 of the required concentration, the filter substrate is removed by one. 0 ° rotated, then, is characterized in that the center concentration by evaporating the deposition source again deposited thin metal film so that the required concentration.
【０００９】また、前記金属薄膜が蒸着形成された前記
フィルタ基板上に、前記金属薄膜を被覆する保護膜を形
成するのが耐候性を高めるために好ましい。Preferably, a protective film for covering the metal thin film is formed on the filter substrate on which the metal thin film is formed by vapor deposition in order to enhance weather resistance.
【００１０】[0010]
【発明の実施の形態】以下、図面を用いて、本発明の実
施の形態について説明する。図１は、本発明の一実施形
態に係る楕円形グラデーションＮＤフィルタの製造方法
に用いられる真空蒸着装置の要部を示す側断面図であ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view showing a main part of a vacuum evaporation apparatus used in a method for manufacturing an elliptical gradation ND filter according to one embodiment of the present invention.
【００１１】この真空蒸着装置１０は、ベルジャ型の真
空蒸着装置であって、そのチャンバＣ内に、蒸着源２を
支持する蒸着源支持部１２と、マスク板４を支持するマ
スク板支持部１４と、フィルタ基板６を支持するフィル
タ基板支持部１６とが設けられてなっている。The vacuum vapor deposition apparatus 10 is a bell jar type vacuum vapor deposition apparatus, in which a vapor deposition source support portion 12 for supporting the vapor deposition source 2 and a mask plate support portion 14 for supporting the mask plate 4 are provided in a chamber C. And a filter substrate support 16 for supporting the filter substrate 6.
【００１２】上記蒸着源支持部１２は、チャンバＣの中
心鉛直軸線Ａｘ上に透光部１８ａが形成された水平板１
８と、この水平板１８上の中心鉛直軸線Ａｘから所定距
離離れた位置において蒸着源２を収容するようにして載
置されたハース２０とを備えてなっている。そして、蒸
着の際には、ハース２０内の蒸着源２に電子ビームを照
射して該蒸着源２を蒸発せしめるようになっている。上
記蒸着源２としては、可視域でフラットな透過率特性を
有するインコーネル、あるいは、Ｃｒ、Ｎｉ、Ｆｅ等の
金属が用いられる。The vapor deposition source support section 12 is a horizontal plate 1 having a light transmitting section 18a formed on the center vertical axis Ax of the chamber C.
8 and a hearth 20 placed on the horizontal plate 18 at a position away from the central vertical axis Ax by a predetermined distance so as to accommodate the evaporation source 2. Then, at the time of evaporation, the evaporation source 2 in the hearth 20 is irradiated with an electron beam to evaporate the evaporation source 2. As the evaporation source 2, Inconel having a flat transmittance characteristic in a visible region, or a metal such as Cr, Ni, or Fe is used.
【００１３】上記マスク板支持部１４は、上記中心鉛直
軸線Ａｘ回りに回転可能に設けられたディスク部材２２
と、このディスク部材２２の中心開口部に支持リング２
４を介して支持された円錐台状の筒状ヤトイ２６とを備
えてなり、この筒状ヤトイ２６の上端部に上記マスク板
４が水平に取り付けられるようになっている。The mask plate supporting portion 14 is provided with a disk member 22 rotatably provided around the central vertical axis Ax.
And a support ring 2 at the center opening of the disk member 22.
And a cylindrical frustum-shaped cylindrical toy 26 supported via the support 4. The mask plate 4 is horizontally mounted on the upper end of the cylindrical toy 26.
【００１４】このマスク板４は、マスキングパターン４
ａが形成された円板状部材であって、そのマスキングパ
ターン４ａは、図２に示すように、マスク板４にその中
心位置Ｏ′から９０°間隔で放射状に延びる４つの木の
葉状開口部を形成することにより構成されている。そし
て、上記ディスク部材２２を回転させることにより、上
記蒸着源２から蒸発してマスク板４に飛来する蒸発金属
を、その中心部で多く該中心部から外周部に向かって徐
々に少なくなる態様で該マスク板４を透過させるように
なっている。その際、蒸発金属を所期の濃度分布で透過
させるためには、マスク板４の中心位置Ｏ′が中心鉛直
軸線Ａｘと一致していることが必要であることから、上
記ディスク部材２２は、中心鉛直軸線Ａｘと直交する方
向に微調整移動可能に構成されている。The mask plate 4 has a masking pattern 4
2, a masking pattern 4a has four leaf-shaped openings extending radially at 90 ° intervals from the center position O ′ of the mask plate 4 as shown in FIG. It is constituted by forming. By rotating the disk member 22, the amount of evaporated metal that evaporates from the evaporation source 2 and flies to the mask plate 4 is increased at the center thereof and gradually decreased from the center toward the outer periphery. The light is transmitted through the mask plate 4. At that time, in order to allow the evaporated metal to pass through at the desired concentration distribution, the center position O ′ of the mask plate 4 needs to coincide with the center vertical axis Ax. It is configured to be finely adjusted and movable in a direction perpendicular to the central vertical axis Ax.
【００１５】上記フィルタ基板支持部１６は、チャンバ
Ｃの天井部２８において中心鉛直軸線Ａｘ上に装着され
た筒状部材３０と、この筒状部材３０にブラケット３２
を介して連結された四角ヤトイ３４と、この四角ヤトイ
３４に装着されたリング状のフィルタ基板支持枠３６と
を備えてなり、このフィルタ基板支持枠３６に上記フィ
ルタ基板６が取り付けられるようになっている。The filter substrate support 16 includes a cylindrical member 30 mounted on the center vertical axis Ax in the ceiling 28 of the chamber C, and a bracket 32 attached to the cylindrical member 30.
And a ring-shaped filter substrate supporting frame 36 mounted on the square toy 34. The filter substrate 6 is attached to the filter substrate supporting frame 36. ing.
【００１６】このフィルタ基板６は円板状透明部材であ
り、フィルタ基板支持枠３６に取り付けられた状態でそ
の中心位置Ｏが蒸着源２とマスク板４の中心位置Ｏ′と
を結ぶ直線上に位置するとともに蒸着源２の蒸発飛来方
向と直交する平面に対して傾斜（水平面に対しては５３
°傾斜）するようになっている。The filter substrate 6 is a disc-shaped transparent member, and its center position O is on a straight line connecting the evaporation source 2 and the center position O 'of the mask plate 4 in a state of being attached to the filter substrate support frame 36. And is inclined with respect to a plane orthogonal to the evaporation flying direction of the evaporation source 2 (53 with respect to the horizontal plane).
° tilt).
【００１７】本実施形態に係る真空蒸着装置１０におい
ては、さらに、水平板１８の中心鉛直軸線Ａｘ上に筒状
部材３８が装着されており、該水平板１８の下方には、
ミラー４０および光源４２が設けられている。そして、
光源４２からの光をミラー４０で上方へ反射させてこれ
を水平板１８の透孔部１８ａおよび筒状部材３８を透し
てマスク板４に照射し、さらにこれを筒状部材３０を透
して天井部２８の上方から観察することにより、マスク
板４の中心位置Ｏ′が中心鉛直軸線Ａｘと一致している
ことを確認し、一致していない場合には上記ディスク部
材２２を中心鉛直軸線Ａｘと直交する方向に微調整移動
させて一致させるようになっている。In the vacuum deposition apparatus 10 according to the present embodiment, a tubular member 38 is further mounted on the central vertical axis Ax of the horizontal plate 18, and below the horizontal plate 18,
A mirror 40 and a light source 42 are provided. And
The light from the light source 42 is reflected upward by the mirror 40 and is irradiated on the mask plate 4 through the through-hole 18 a of the horizontal plate 18 and the cylindrical member 38, and is further transmitted through the cylindrical member 30. By observing from above the ceiling portion 28, it is confirmed that the center position O 'of the mask plate 4 coincides with the center vertical axis Ax. Fine adjustment movement is performed in the direction orthogonal to Ax to make them coincide with each other.
【００１８】次に、上記真空蒸着装置１０を用いてフィ
ルタ基板６に金属薄膜を蒸着形成する方法について説明
する。まず、フィルタ基板６を、フィルタ基板支持枠３
６を介して四角ヤトイ３４に装着することにより、蒸着
源２の蒸発飛来方向と直交する平面に対して傾斜させて
固定配置するとともに、マスク板４をその中心位置Ｏ′
が中心鉛直軸線Ａｘと一致するようにして筒状ヤトイ２
６の上端部に取り付ける。そして、チャンバＣ内を真空
引きして１０-3Ｐａ程度の真空状態にした後、ディスク
部材２２を中心鉛直軸線Ａｘ回りに回転させる。Next, a method of depositing a metal thin film on the filter substrate 6 using the above-mentioned vacuum deposition apparatus 10 will be described. First, the filter substrate 6 is attached to the filter substrate support frame 3.
By mounting the mask plate 4 at a center position O ′ by attaching the mask plate 4 to a square toy 34 via the base plate 6 so as to be inclined with respect to a plane perpendicular to the evaporation flying direction of the evaporation source 2.
Is aligned with the central vertical axis Ax.
Attach to the upper end of 6. Then, after the inside of the chamber C is evacuated to a vacuum state of about 10 −3 Pa, the disk member 22 is rotated around the central vertical axis Ax.
【００１９】この状態で、蒸着源２を蒸発させると、蒸
着源２からマスク板４に飛来した蒸発金属はマスキング
パターン４ａの開口部形状に従って該マスク板４を透過
し、図３に２点鎖線で示すような投影像Ｉとして蒸着形
成されるが、マスク板４は中心鉛直軸線Ａｘ回りに回転
しているので、フィルタ基板６上には上記投影像Ｉが周
方向に累積されて破線で示すような略楕円形の輪郭を有
する金属薄膜８が蒸着形成される。この金属薄膜８は、
その中心位置Ｏから放射方向いずれの方向に関しても外
周部に向かって透過率が無段階に高くなるように形成さ
れたものとなる。In this state, when the evaporation source 2 is evaporated, the evaporated metal that has flown from the evaporation source 2 to the mask plate 4 passes through the mask plate 4 in accordance with the shape of the opening of the masking pattern 4a. Is formed as a projection image I as shown in FIG. 5, but since the mask plate 4 is rotated around the center vertical axis Ax, the projection images I are accumulated in the circumferential direction on the filter substrate 6 and are indicated by broken lines. The metal thin film 8 having such a substantially elliptical outline is formed by vapor deposition. This metal thin film 8
The transmittance is continuously increased from the center position O toward the outer periphery in any radial direction.
【００２０】しかしながら、仮にこのまま金属薄膜８の
中心濃度（中心位置Ｏにおける濃度）が所要濃度になる
まで蒸着形成を行ってしまうと、中心位置Ｏから外周部
への透過率の変化の割合が中心位置Ｏからの向きによっ
て異なったものとなってしまう。すなわち、図３に破線
で示すように、金属薄膜８の輪郭は上下非対称の疑似楕
円形であるため、中心位置Ｏから外周部への透過率の変
化の割合は、図５に示すように上半部において下半部よ
りも緩やかなものとなってしまう。なお、同図において
示す曲線は、Ｏ−Ｖが上半部、Ｏ−Ｖ´が下半部、Ｏ−
Ｈが右半部、Ｏ−Ｈ´が左半部の透過率変化を示す曲線
である。However, if the vapor deposition is performed until the central concentration (the concentration at the central position O) of the metal thin film 8 reaches the required concentration, the rate of change of the transmittance from the central position O to the outer peripheral portion becomes the central value. The result differs depending on the direction from the position O. That is, as shown by a broken line in FIG. 3, since the contour of the metal thin film 8 is a pseudo-elliptical shape that is vertically asymmetric, the rate of change of the transmittance from the center position O to the outer peripheral portion is as shown in FIG. The halves are more gradual than the lower halves. The curves shown in the figure are OV in the upper half, OV 'in the lower half, O-
H is a curve showing the transmittance change in the right half, and OH 'is a curve showing the transmittance change in the left half.
【００２１】本実施形態においては、上記金属薄膜８の
中心濃度が所要濃度の約１／２になった時点で一旦蒸着
形成を中断する。この中断は、図示しないシャッタを用
いて行うことができる。そして、フィルタ基板６をフィ
ルタ基板支持枠３６と共に四角ヤトイ３４に対して１８
０°回転させ、その後、蒸着源２を再度蒸発させて中心
濃度が所要濃度になるように金属薄膜８を蒸着形成す
る。In this embodiment, when the central concentration of the metal thin film 8 becomes about 1/2 of the required concentration, the vapor deposition is temporarily stopped. This interruption can be performed using a shutter (not shown). Then, the filter substrate 6 and the filter substrate support frame 36 are
After rotating by 0 °, the evaporation source 2 is again evaporated to form a metal thin film 8 by evaporation so that the center concentration becomes the required concentration.
【００２２】このようにして形成された金属薄膜８は、
その上半部と下半部とで濃度変化のアンバランスが相殺
されるので、図４に示すように、中心位置Ｏから外周部
への透過率の変化の割合が、上半部と下半部とで略等し
いものとなる。上記金属薄膜８を蒸着形成したまま放置
すると、該金属薄膜８上に酸化膜が形成されてしまい、
楕円形グラデーションＮＤフィルタの透過率が経時変化
により所期の値よりも高くなってしまう。The metal thin film 8 thus formed is
Since the unbalance of the density change is offset between the upper half and the lower half, as shown in FIG. 4, the rate of change of the transmittance from the center position O to the outer periphery is equal to the upper half and the lower half. It is almost the same as the part. If the metal thin film 8 is left as deposited and formed, an oxide film is formed on the metal thin film 8,
The transmittance of the elliptical gradation ND filter becomes higher than an expected value due to a change with time.
【００２３】そこで、本実施形態においては、上記金属
薄膜８が蒸着形成されたフィルタ基板６上に、該金属薄
膜８を被覆する保護膜を蒸着形成する。この保護膜の蒸
着形成は、マスク板４を外し、上記蒸着源２の近傍に配
置された別の蒸着源（図示せず）を蒸発させることによ
り形成する。その際の蒸着源としては、ＳｉＯ2 、Ｓｉ
Ｏ、ＭｇＦ2 、Ａｌ2 Ｏ3 等を用いることができる。Therefore, in this embodiment, a protective film for covering the metal thin film 8 is formed on the filter substrate 6 on which the metal thin film 8 is formed by vapor deposition. The vapor deposition of the protective film is formed by removing the mask plate 4 and evaporating another vapor deposition source (not shown) arranged near the vapor deposition source 2. In this case, as a deposition source, SiO 2 , Si
O, MgF 2 , Al 2 O 3 and the like can be used.
【００２４】以上詳述したように、本実施形態に係る楕
円形グラデーションＮＤフィルタの製造方法は、金属薄
膜を真空蒸着法により形成するに当たり、真空雰囲気内
において、フィルタ基板６を、蒸着源２の蒸発飛来方向
と直交する平面に対して傾斜させて固定配置するととも
に、マスキングパターン４ａが形成されたマスク板４
を、フィルタ基板６よりも蒸着源２側において該フィル
タ基板６と所定角度をなすように配置して回転させ、こ
の状態で、蒸着源２を蒸発させてフィルタ基板６上に金
属薄膜８を蒸着形成するようになっているので、略楕円
形の金属薄膜８を形成することができる。しかも、その
際、金属薄膜８の中心濃度が所要濃度の約１／２になっ
た時点でフィルタ基板６を１８０°回転させ、その後、
蒸着源２を再度蒸発させて中心濃度が所要濃度になるよ
うに金属薄膜８を蒸着形成するようになっているので、
金属薄膜８の中心部から外周部への透過率の変化の割合
を、該金属薄膜８の中心位置Ｏに関して略点対称に設定
することができ、これにより楕円形グラデーションＮＤ
フィルタとしての機能を確実に発揮させることができ
る。As described in detail above, in the method of manufacturing the elliptical gradation ND filter according to the present embodiment, when forming the metal thin film by the vacuum deposition method, the filter substrate 6 is placed in the vacuum atmosphere in a vacuum atmosphere. The mask plate 4 on which a masking pattern 4a is formed while being fixedly arranged while being inclined with respect to a plane orthogonal to the evaporation flying direction.
Is disposed on the deposition source 2 side of the filter substrate 6 so as to form a predetermined angle with the filter substrate 6 and rotated. In this state, the deposition source 2 is evaporated to deposit the metal thin film 8 on the filter substrate 6. Since the metal thin film 8 is formed, a substantially oval metal thin film 8 can be formed. In addition, at this time, when the center concentration of the metal thin film 8 becomes about 1/2 of the required concentration, the filter substrate 6 is rotated by 180 °, and thereafter,
Since the metal thin film 8 is formed by evaporation so that the center concentration becomes the required concentration by evaporating the evaporation source 2 again,
The rate of change of the transmittance from the central portion to the outer peripheral portion of the metal thin film 8 can be set to be approximately point-symmetric with respect to the center position O of the metal thin film 8, whereby the elliptical gradation ND
The function as a filter can be reliably exhibited.
【００２５】しかも、本実施形態においては、金属薄膜
８が蒸着形成されたフィルタ基板６上に、金属薄膜８を
被覆する保護膜を蒸着形成するようになっているので、
該金属薄膜８上に酸化膜が形成されて楕円形グラデーシ
ョンＮＤフィルタの透過率が経時変化により所期の値よ
りも高くなってしまうのを未然に防止することができ
る。Further, in the present embodiment, a protective film for covering the metal thin film 8 is formed by vapor deposition on the filter substrate 6 on which the metal thin film 8 is vapor deposited.
An oxide film is formed on the metal thin film 8 to prevent the transmittance of the elliptical gradation ND filter from becoming higher than an expected value due to a change with time.
【００２６】上記実施形態において、フィルタ基板６を
固定配置する際の傾斜角度を適宜変更して蒸着を行うよ
うにすれば、長軸および短軸の長さ比の異なる金属薄膜
を有する楕円形グラデーションＮＤフィルタを得ること
ができる。なお、上記実施形態においては保護膜を真空
蒸着法を用いて形成しているが、この保護膜はスパッタ
リング法やイオンプレーティング法等の他の膜形成方法
を用いて形成することが可能である。In the above embodiment, if the evaporation is performed by appropriately changing the inclination angle when the filter substrate 6 is fixedly arranged, an elliptical gradation having metal thin films having different length ratios of the major axis and the minor axis can be obtained. An ND filter can be obtained. In the above embodiment, the protective film is formed by using a vacuum evaporation method, but the protective film can be formed by using another film forming method such as a sputtering method or an ion plating method. .
【００２７】[0027]
【発明の効果】本発明に係る楕円形グラデーションＮＤ
フィルタの製造方法は、金属薄膜を真空蒸着法により形
成するに当たり、真空雰囲気内において、フィルタ基板
を、蒸着源の蒸発飛来方向と直交する平面に対して所定
角度傾斜させて固定配置するとともに、所定のマスキン
グパターンが形成されたマスク板を、フィルタ基板より
も蒸着源側において該フィルタ基板と所定角度をなすよ
うに配置して回転させ、この状態で、蒸着源を蒸発させ
てフィルタ基板上に金属薄膜を蒸着形成し、金属薄膜の
中心濃度が所要濃度の約１／２になった時点でフィルタ
基板を１８０°回転させ、その後、蒸着源を再度蒸発さ
せて中心濃度が所要濃度になるように金属薄膜を蒸着形
成するようになっているので、略楕円形の金属薄膜を精
度良く形成することができる。The elliptical gradation ND according to the present invention
In the method of manufacturing a filter, a metal thin film is formed by a vacuum deposition method.In a vacuum atmosphere, a filter substrate is fixedly disposed at a predetermined angle with respect to a plane orthogonal to a direction in which an evaporation source evaporates, and a predetermined position. The mask plate on which the masking pattern is formed is arranged and rotated so as to form a predetermined angle with the filter substrate on the side of the vapor deposition source relative to the filter substrate, and in this state, the vapor deposition source is evaporated and metal is deposited on the filter substrate. A thin film is formed by vapor deposition, and when the center concentration of the metal thin film becomes about 1/2 of the required concentration, the filter substrate is rotated by 180 °, and then the evaporation source is evaporated again so that the center concentration becomes the required concentration. Since the metal thin film is formed by vapor deposition, a substantially elliptical metal thin film can be formed with high accuracy.
【図１】本発明の一実施形態に係る楕円形グラデーショ
ンＮＤフィルタの製造方法に用いられる真空蒸着装置の
要部を示す側断面図FIG. 1 is a side sectional view showing a main part of a vacuum evaporation apparatus used for a method of manufacturing an elliptical gradation ND filter according to an embodiment of the present invention.
【図２】上記製造方法に用いられるマスク板を、図１の
II方向矢視で示す図FIG. 2 shows a mask plate used in the above manufacturing method,
Figure shown in the direction of arrow II
【図３】図１のIII 方向矢視図FIG. 3 is a view in the direction of arrow III in FIG. 1;
【図４】上記製造方法で製造された楕円形グラデーショ
ンＮＤフィルタの透過率分布を示すグラフFIG. 4 is a graph showing a transmittance distribution of an elliptical gradation ND filter manufactured by the above manufacturing method.
【図５】上記製造方法とは異なる方法で製造された楕円
形グラデーションＮＤフィルタの透過率分布を示すグラ
フFIG. 5 is a graph showing a transmittance distribution of an elliptical gradation ND filter manufactured by a method different from the above manufacturing method.
【図６】真円形グラデーションＮＤフィルタおよびその
透過率分布を示す図FIG. 6 is a diagram showing a perfect circular gradation ND filter and its transmittance distribution.
【図７】真円形グラデーションＮＤフィルタの製造方法
を示す、図１と同様の図FIG. 7 is a view similar to FIG. 1, showing a method of manufacturing a perfect circular gradation ND filter;
２ 蒸着源 ４ マスク板 ４ａ マスキングパターン ６ フィルタ基板 ８ 金属薄膜 １０ 真空蒸着装置 １２ 蒸着源支持部 １４ マスク板支持部 １６ フィルタ基板支持部 １８ 水平板 １８ａ 透光部 ２０ ハース ２２ ディスク部材 ２４ 支持リング ２６ 筒状ヤトイ ２８ 天井部 ３０ 筒状部材 ３２ ブラケット ３４ 四角ヤトイ ３６ フィルタ基板支持枠 ３８ 筒状部材 ４０ ミラー ４２ 光源 Ａｘ 中心鉛直軸線 Ｃ チャンバ Ｉ、Ｉ′ 投影像 Ｏ フィルタ基板の中心位置 Ｏ′ マスク板の中心位置 Reference Signs List 2 evaporation source 4 mask plate 4a masking pattern 6 filter substrate 8 metal thin film 10 vacuum evaporation device 12 evaporation source support 14 mask plate support 16 filter substrate support 18 horizontal plate 18a light transmission unit 20 hearth 22 disk member 24 support ring 26 Cylindrical toy 28 Ceiling 30 Cylindrical member 32 Bracket 34 Square toy 36 Filter substrate support frame 38 Cylindrical member 40 Mirror 42 Light source Ax Center vertical axis C Chamber I, I 'Projected image O Center position of filter substrate O' Mask plate Center position of
Claims (2)
中心部から外周部に向かって透過率が無段階に高くなる
ように形成された楕円形グラデーションＮＤフィルタの
製造方法において、前記金属薄膜を真空蒸着法により形
成する方法であって、 真空雰囲気中において、前記フィルタ基板を、蒸着源の
蒸発飛来方向と直交する平面に対して所定角度傾斜させ
て固定配置するとともに、所定のマスキングパターンが
形成されたマスク板を、前記フィルタ基板よりも前記蒸
着源側において該フィルタ基板と所定角度をなすように
配置して回転させ、 この状態で、前記蒸着源を蒸発させて前記フィルタ基板
上に略楕円形の金属薄膜を蒸着形成し、該金属薄膜の中
心濃度が所要濃度の約１／２になった時点で前記フィル
タ基板を１８０°回転させ、 その後、前記蒸着源を再度蒸発させて前記中心濃度が所
要濃度になるように金属薄膜を蒸着形成することを特徴
とする楕円形グラデーションＮＤフィルタの製造方法。1. A method for manufacturing an elliptical gradation ND filter comprising a filter substrate and a substantially elliptical metal thin film formed such that the transmittance increases steplessly from a central portion to an outer peripheral portion. In a vacuum atmosphere, the filter substrate is fixedly arranged at a predetermined angle with respect to a plane perpendicular to the evaporation flying direction of the evaporation source, and a predetermined masking pattern is formed. The formed mask plate is arranged and rotated so as to form a predetermined angle with the filter substrate on the side of the vapor deposition source relative to the filter substrate. In this state, the vapor deposition source is evaporated to substantially cover the filter substrate. An elliptical metal thin film is formed by vapor deposition. When the center concentration of the metal thin film becomes approximately half the required concentration, the filter substrate is rotated by 180 °. After, elliptical gradation ND manufacturing method of the filter, wherein the center concentration by evaporating the deposition source again deposited thin metal film so that the required concentration.
ルタ基板上に、前記金属薄膜を被覆する保護膜を形成す
ることを特徴とする請求項１記載の楕円形グラデーショ
ンＮＤフィルタの製造方法。2. The method for manufacturing an elliptical gradation ND filter according to claim 1, wherein a protective film for covering the metal thin film is formed on the filter substrate on which the metal thin film is formed by vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20531297A JP3810034B2 (en) | 1997-07-15 | 1997-07-15 | Manufacturing method of elliptic gradation ND filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20531297A JP3810034B2 (en) | 1997-07-15 | 1997-07-15 | Manufacturing method of elliptic gradation ND filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1138206A true JPH1138206A (en) | 1999-02-12 |
| JP3810034B2 JP3810034B2 (en) | 2006-08-16 |
Family
ID=16504875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20531297A Expired - Fee Related JP3810034B2 (en) | 1997-07-15 | 1997-07-15 | Manufacturing method of elliptic gradation ND filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3810034B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6952314B2 (en) | 2002-07-30 | 2005-10-04 | Canon Denshi Kabushiki Kaisha | Method of manufacturing ND filter, and aperture device and camera having ND filter |
| JP2015117421A (en) * | 2013-12-19 | 2015-06-25 | Fdk株式会社 | Forming method of wedge film |
| US9778401B2 (en) | 2014-03-26 | 2017-10-03 | Sony Corporation | Optical element and imaging apparatus |
-
1997
- 1997-07-15 JP JP20531297A patent/JP3810034B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6952314B2 (en) | 2002-07-30 | 2005-10-04 | Canon Denshi Kabushiki Kaisha | Method of manufacturing ND filter, and aperture device and camera having ND filter |
| JP2015117421A (en) * | 2013-12-19 | 2015-06-25 | Fdk株式会社 | Forming method of wedge film |
| US9778401B2 (en) | 2014-03-26 | 2017-10-03 | Sony Corporation | Optical element and imaging apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3810034B2 (en) | 2006-08-16 |
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