JPH03214722A - Resist coating device - Google Patents
Resist coating deviceInfo
- Publication number
- JPH03214722A JPH03214722A JP1110190A JP1110190A JPH03214722A JP H03214722 A JPH03214722 A JP H03214722A JP 1110190 A JP1110190 A JP 1110190A JP 1110190 A JP1110190 A JP 1110190A JP H03214722 A JPH03214722 A JP H03214722A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- wafer
- cover plate
- solvent
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 title abstract description 14
- 238000000576 coating method Methods 0.000 title abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000009834 vaporization Methods 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体装置等製造用のレジスト回転塗布装置に関し、
膜厚均一性の良好な塗布膜を得ることが出来るレジスト
塗布装置を提供することを目的とし、被塗布体である基
板1の上方に近接対向してこれを覆うカバー板15が配
設され、該カバー板15は少なくともその中央部に開孔
15Aを有し、該開孔15Aは溶剤蒸気供給手段l7に
連通ずるように構成する。[Detailed Description of the Invention] [Summary] The present invention relates to a resist spin coating device for manufacturing semiconductor devices, etc., and aims to provide a resist coating device that can obtain a coating film with good film thickness uniformity. A cover plate 15 is disposed above the substrate 1, which is a body, to cover it, and the cover plate 15 has an opening 15A at least in its center, and the opening 15A is connected to the solvent vapor supply means l7. Configure it so that it communicates with the
本発明は、半導体装置等製造用のレジスト回転塗布装置
に関する。The present invention relates to a resist spin coating apparatus for manufacturing semiconductor devices and the like.
半導体装置の電極や配線はウェーハ処理工程においてウ
ェーハに塗布したレジス1・を紫外線や電子線等で露光
した後現像して得られるレジストパターンを基にして形
成される。従ってこの電極や配線のパターン精度はレジ
ストパターンの精度に依存するが、このレジストパター
ンの幅精度に対してはレジスト膜厚精度が大きな影響を
与えることが知られている。又、ウエーハ周縁部に生ず
るレジストの盛り上がりは、ウェーハのハンドリング時
の発塵の原因となることも知られている。Electrodes and wiring of semiconductor devices are formed based on a resist pattern obtained by exposing a resist 1 coated on a wafer to ultraviolet rays, electron beams, etc. in a wafer processing step, and then developing it. Therefore, the pattern accuracy of the electrodes and wiring depends on the accuracy of the resist pattern, but it is known that the accuracy of the resist film thickness has a large influence on the width accuracy of the resist pattern. It is also known that the resist bulge that occurs at the wafer periphery causes dust to be generated during wafer handling.
これらのレジスト膜厚のバラツキを抑制するためにはプ
ロセス条件の厳しい管理が必要であるが、近時、半導体
装置のパターンの微細化が進み、プロセス条件の管理だ
けでは所望の膜厚均一性を得ることが困難になって来て
いる。今後もより一層の微細化が見込まれるため、良好
な膜厚均一性の得られるレジスト塗布装置の開発が望ま
れている。Strict control of process conditions is required to suppress these variations in resist film thickness, but as semiconductor device patterns have become increasingly finer in recent years, controlling process conditions alone is not enough to achieve the desired film thickness uniformity. It's becoming difficult to obtain. Since further miniaturization is expected in the future, it is desired to develop a resist coating device that can obtain good film thickness uniformity.
従来のレジスト塗布装置を第2図により説明する。第2
図は従来の一般的な装置を示す模式断面図である。図中
、lは被塗布物のウェーハである。A conventional resist coating apparatus will be explained with reference to FIG. Second
The figure is a schematic sectional view showing a conventional general device. In the figure, l is a wafer to be coated.
11はチャックであり、ウエーハ1を真空吸着する。Reference numeral 11 denotes a chuck, which vacuum-chucks the wafer 1.
■2はモータ等からなる回転手段であり、ウェーハ1を
真空吸着したチャック11を所望の回転数で回転させる
。23はレジストノズルであり、一端がレジスト供給手
段(図示は省略)に連通しており、他端からレジストを
ウェーハl上に滴下する。24はカップであり、ウエー
ハ1の回転時に飛散する余分のレジストを収容する。こ
のカップ24の下部には排気口24Aが設けられており
、レジストの溶剤の蒸気を排出させる。(2) Reference numeral 2 is a rotating means consisting of a motor or the like, which rotates the chuck 11, which vacuum-chucks the wafer 1, at a desired number of revolutions. 23 is a resist nozzle, one end of which communicates with a resist supply means (not shown), and drops resist onto the wafer l from the other end. A cup 24 accommodates excess resist that is scattered when the wafer 1 rotates. An exhaust port 24A is provided at the bottom of the cup 24 to exhaust the vapor of the resist solvent.
この装置でレジストを塗布するには、先ず静止状態のウ
エーハ1上にレジストノズル23からレジストを滴下さ
せ、次いでウェーハ1を低速で回転してレジストをウェ
ーハlの表面に拡げ、更に高速回転するとレジストは所
望の膜厚に向けて徐々に拡がりを続ける。この間ウェー
ハl表面に拡がったレジストは次第に溶剤が蒸発して粘
度を増し、やがて拡がりは停止する。この時点でウェー
ハlの回転を停止し、レジスト塗布を完了する。To apply resist using this device, first drop the resist from the resist nozzle 23 onto the stationary wafer 1, then rotate the wafer 1 at a low speed to spread the resist over the surface of the wafer L, and then rotate the wafer 1 at a high speed to spread the resist. continues to gradually expand toward the desired film thickness. During this time, the solvent of the resist that has spread on the surface of the wafer 1 gradually evaporates and its viscosity increases, and eventually the resist stops spreading. At this point, the rotation of the wafer I is stopped and the resist coating is completed.
ところでこのウエーハ1の回転中、ウェーハ1上のレジ
ストはウェーハlの周速度に応じた風を受けることにな
るが、この風速はウェーハlの中心がゼロで、周辺に行
くに従って大となるため、周辺部の方が中心部より速《
粘度が高くなり、その結果、最終的には周辺部の膜厚が
中心部のそれより大となる。しかも表層部から粘度が高
まるので、特に周縁部ではレジスト膜の盛り上がりを生
ずる。又、ウエーハlは完全な円形ではなく、結晶方位
を示すためにオリエンテーションフラット(以後「オリ
フラ」と記す)を有しているため、回転時にはウェーハ
1周縁部で気流の乱れを生じ、これも周縁部にレジスト
膜の盛り上がりを生ずる原因となる。By the way, while the wafer 1 is rotating, the resist on the wafer 1 is exposed to wind according to the circumferential speed of the wafer l, but this wind speed is zero at the center of the wafer l and increases toward the periphery. The periphery is faster than the center《
The viscosity increases, and as a result, the film thickness at the periphery becomes larger than that at the center. Moreover, since the viscosity increases from the surface layer, the resist film swells, especially at the peripheral edge. In addition, since the wafer l is not perfectly circular and has an orientation flat (hereinafter referred to as an "orientation flat") to indicate the crystal orientation, airflow turbulence occurs at the periphery of the wafer 1 during rotation, and this also occurs at the periphery. This may cause the resist film to bulge in some areas.
一般的なレジスト塗布装置における上記のような現象を
抑制するために、被塗布物の上方に近接対向して中央部
に開孔を有するカバー板を配設した装置の具体例が特開
昭62−140674公報に開示されている。これは、
レジストの溶剤蒸気を被塗布物とカバー板との間に停滞
させて溶剤の気化を抑制すると共に、ウエーハ中央部と
周辺部からその溶剤蒸気の一部を外部に拡散させること
によりウ工−ハ上の溶剤蒸気圧の均一化を図ったもので
ある。In order to suppress the above-mentioned phenomenon in a general resist coating device, a specific example of the device is disclosed in Japanese Patent Laid-Open No. 62/1999, in which a cover plate having a hole in the center is disposed close to and facing above the object to be coated. It is disclosed in the publication No.-140674. this is,
The evaporation of the solvent is suppressed by causing the resist solvent vapor to stagnate between the object to be coated and the cover plate, and a portion of the solvent vapor is diffused to the outside from the center and periphery of the wafer, thereby improving the wafer processing. This is intended to equalize the vapor pressure of the above solvent.
ところが特に微細なパターンを精密に転写する目的の場
合には、一般的な装置は勿論のこと、上記の改良された
装置であっても、充分に膜厚が均一な塗布膜が得られな
いという問題があった。本発明は、このような問題を解
決して、膜厚均一性の良好な塗布膜を得ることが出来る
レジスト塗布装置を提供することを目的とする。However, when the purpose is to accurately transfer particularly fine patterns, it is said that even with the improved equipment mentioned above, it is not possible to obtain a coating film with a sufficiently uniform thickness. There was a problem. SUMMARY OF THE INVENTION An object of the present invention is to provide a resist coating apparatus capable of solving such problems and obtaining a coating film with good film thickness uniformity.
この目的は、本発明によれば、被塗布体である基板1の
上方に近接対向してこれを覆うカバー板l5が配設され
、該カバー板15は少なくともその中央部に開孔15A
を有し、該開孔15Aは溶剤蒸気供給手段17に連通し
ていることを特徴とするレジスト塗布装置とすることで
、達成される。According to the present invention, a cover plate 15 is disposed above the substrate 1, which is an object to be coated, and covers the substrate 1, and the cover plate 15 has an opening 15A at least in its center.
This can be achieved by using a resist coating apparatus characterized in that the opening 15A is in communication with the solvent vapor supply means 17.
本発明では、被塗布物であるウエーハの直上に対向して
カバー板を配設したため、ウェーハ上のレジストから蒸
発した溶剤蒸気はウエーハとカバー板との間の狭い空間
に停滞し、溶剤の気化が抑制される。更にこの空間に溶
剤蒸気供給手段l7から溶剤蒸気を供給することにより
ウエーノ\の中央部、中間部、周辺部における溶剤蒸気
圧が略均一になる。その結果、レジストは充分に拡がっ
てから略全面一様に乾燥し、膜厚均一性の良いレジスト
膜が得られることになる。In the present invention, since the cover plate is disposed directly above and facing the wafer, which is the object to be coated, the solvent vapor evaporated from the resist on the wafer stagnates in the narrow space between the wafer and the cover plate, and the solvent vaporizes. is suppressed. Furthermore, by supplying solvent vapor to this space from the solvent vapor supply means 17, the solvent vapor pressure in the center, middle and peripheral parts of Ueno\ becomes approximately uniform. As a result, the resist is sufficiently spread and then dried almost uniformly over the entire surface, resulting in a resist film with good thickness uniformity.
本発明に基づくレジスト塗布装置の実施例を第1図によ
り説明する。第1図は本発明の一実施例を示す模式図断
面図である。同図中、1は被塗布物のウェーハである。An embodiment of a resist coating apparatus based on the present invention will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing one embodiment of the present invention. In the figure, 1 is a wafer to be coated.
11はチャックであり、ウエーハ1を真空吸着する。l
2はモータ等からなる回転手段であり、ウェーハlを真
空吸着したチャック11を所望の回転数で回転させる。Reference numeral 11 denotes a chuck, which vacuum-chucks the wafer 1. l
Reference numeral 2 denotes a rotating means consisting of a motor or the like, which rotates the chuck 11, which vacuum-chucks the wafer 1, at a desired number of revolutions.
13はレジストノズルであり、一端がレジスト供給手段
(図示は省略)に連通しており、他端からレジストをウ
工−ハ1上に滴下する。14はカップであり、ウエーハ
1の回転時に飛散する余分のレジストを収容するための
ものであり、上下移動機構(図示は省略)により上下動
する。このカップl4の下部には排気口14Aが設けら
れており、レジストの溶剤の蒸気を排出させる。Reference numeral 13 denotes a resist nozzle, one end of which communicates with a resist supply means (not shown), and drops resist onto the wafer 1 from the other end. A cup 14 is used to accommodate excess resist that is scattered when the wafer 1 rotates, and is moved up and down by a vertical movement mechanism (not shown). An exhaust port 14A is provided at the bottom of the cup 14 to exhaust the vapor of the resist solvent.
15はカバー板であり、外径は被塗布物のウエーハ1よ
りも大きく (約1.3倍とした)、その中央部には開
孔15Aを有する円板である。16はハウジングであり
、カバー板l5上に固着されており、内部に空所16A
を有し、この空所16Aはカバー板l5の開孔15Aに
通じている。前記のレジストノズル13はこのハウジン
グ16に固着されている。このハウジング16は上下移
動機構(図示は省略)により上下動して、カバー板15
及びレジストノズル13とウェーハ1との距離を変える
ことが出来る。Reference numeral 15 denotes a cover plate, which is a circular plate having an outer diameter larger (approximately 1.3 times) than the wafer 1 to be coated and having an opening 15A in its center. 16 is a housing, which is fixed on the cover plate l5, and has a cavity 16A inside.
This cavity 16A communicates with the opening 15A of the cover plate l5. The above-mentioned resist nozzle 13 is fixed to this housing 16. This housing 16 is moved up and down by a vertical movement mechanism (not shown), and the cover plate 15
Also, the distance between the resist nozzle 13 and the wafer 1 can be changed.
l7は溶剤蒸気供給手段であり、容器17A、ガス管1
7B、チューブ17C等からなり、容器17Aにレジス
トの溶剤と同等の溶剤を半量程度入れ、その蒸気をチュ
ーブ17cによりハウジングl6の空所16Aに導き、
カバー板15の開孔15Aから放出する。17 is a solvent vapor supply means, which includes a container 17A and a gas pipe 1.
7B, a tube 17C, etc., fill a container 17A with about half of a solvent equivalent to that of the resist, and guide the vapor into the cavity 16A of the housing 16 through the tube 17c.
It is released from the opening 15A of the cover plate 15.
容器17Aにはガス管17Bが導入されており、加圧窒
素等を溶剤中に注入することにより、パブリングによる
溶剤蒸発の促進やその蒸気の送気が出来る。A gas pipe 17B is introduced into the container 17A, and by injecting pressurized nitrogen or the like into the solvent, it is possible to promote the evaporation of the solvent by bubbling and to send the vapor.
この装置でレジストを塗布するには、先ずカップ12を
下げ、カバー板l5及びレジストノズル13を上げた状
態でウェーハlをチャック11上に載置して真空吸着し
、次にカバー板15及びレジストノズル13をウェーハ
1に近接対向せしめ(ウェーハlとカバー15との間隔
は10mm以下)、カップ12を上げ、ウェーハlの静
止状態でレジストノズルl3からレジストを滴下させる
。次いでウェーハ1を低速で回転してレジストをウエー
ハl上に拡げ、更に高速回転するとレジストは所望の膜
厚に向けて徐々に拡がりを続ける。ウェーハ1表面に拡
がったレジストは次第に溶剤が蒸発して粘度を増し、や
がて拡がりは停止する。この間、レジストから蒸発した
溶剤蒸気がウエーハ1とカバー板l5との間の狭い空間
Sに停滞し、更に溶剤蒸気供給手段17から溶剤蒸気の
供給を受けるため、溶剤の気化が抑制される。その結果
、レジストは充分に拡がってから乾燥し、膜厚均一性の
良いレジスト膜が得られる。特にウェーハ1周縁部のレ
ジスト盛り上がりはオリフラ部の一部を除いて殆ど消滅
した。To apply resist with this device, first lower the cup 12, place the wafer l on the chuck 11 with the cover plate l5 and resist nozzle 13 raised, vacuum adsorb it, then apply the cover plate 15 and the resist nozzle 13 up. The nozzle 13 is closely opposed to the wafer 1 (the distance between the wafer 1 and the cover 15 is 10 mm or less), the cup 12 is raised, and resist is dripped from the resist nozzle 13 while the wafer 1 is stationary. Next, the wafer 1 is rotated at a low speed to spread the resist on the wafer 1, and when the wafer 1 is rotated at an even higher speed, the resist continues to gradually spread toward a desired film thickness. The solvent of the resist that has spread on the surface of the wafer 1 gradually evaporates and its viscosity increases, and eventually the resist stops spreading. During this time, the solvent vapor evaporated from the resist stagnates in the narrow space S between the wafer 1 and the cover plate l5, and is further supplied with solvent vapor from the solvent vapor supply means 17, so that the vaporization of the solvent is suppressed. As a result, the resist is sufficiently spread and then dried, resulting in a resist film with good thickness uniformity. In particular, the resist bulge at the periphery of the wafer 1 almost disappeared except for a part of the orientation flat.
本発明は以上の実施例に限定されることなく、更に種々
変形して実施出来る。例えば被塗布物はウエーハとは限
らず、他の円板状の物体、或いはフォトマスク等の角板
状物体であっても有効である。又、カバー板の間孔は中
央部の一個だけでなく、他に例えば放射状に複数個設け
てもよい。The present invention is not limited to the above embodiments, but can be implemented with various modifications. For example, the object to be coated is not limited to a wafer, but other disc-shaped objects or rectangular plate-shaped objects such as photomasks are also effective. Further, the cover plate may have not only one hole in the center, but also a plurality of holes arranged radially.
以上説明したように、本発明によれば、発塵源となるウ
エーハ周縁部のレジスト盛り上がりが少なく、膜厚均一
性の良好な塗布膜を得ることが出来るレジスト塗布装置
を提供することが出来、半導体装遊製造工程の歩留り向
上に寄与するところが大である。As described above, according to the present invention, it is possible to provide a resist coating apparatus that can obtain a coated film with good film thickness uniformity with less resist swelling around the wafer periphery, which is a source of dust generation. This greatly contributes to improving yields in semiconductor device manufacturing processes.
第1図は本発明の実施例を示す模式断面図、第2図は従
来の一般的な装置を示す模式断面図、である。
図中、■はウェーハ(基板)、
10
11はチャック、
12は回転手段、
13. 23はレジストノズル、
14. 24はカップ、
l5はカバー板、
15Aは開孔、
l7は溶剤蒸気供給手段、
である。
l
1
口FIG. 1 is a schematic sectional view showing an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a conventional general device. In the figure, ■ is a wafer (substrate), 10, 11 is a chuck, 12 is a rotating means, 13. 23 is a resist nozzle; 14. 24 is a cup, 15 is a cover plate, 15A is an opening, and 17 is a solvent vapor supply means. l 1 mouth
Claims (1)
を覆うカバー板(15)が配設され、該カバー板(15
)は少なくともその中央部に開孔(15A)を有し、 該開孔(15A)は溶剤蒸気供給手段(17)に連通し
ていることを特徴とするレジスト塗布装置。[Claims] In an apparatus for spin-coating a resist onto a substrate (1), a cover plate (15) is disposed above and close to and covering the substrate (1), which is an object to be coated; The cover plate (15
) has an aperture (15A) at least in its center, and the aperture (15A) communicates with a solvent vapor supply means (17).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1110190A JPH03214722A (en) | 1990-01-19 | 1990-01-19 | Resist coating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1110190A JPH03214722A (en) | 1990-01-19 | 1990-01-19 | Resist coating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03214722A true JPH03214722A (en) | 1991-09-19 |
Family
ID=11768620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1110190A Pending JPH03214722A (en) | 1990-01-19 | 1990-01-19 | Resist coating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03214722A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
JP2004160336A (en) * | 2002-11-12 | 2004-06-10 | Seiko Epson Corp | Film forming apparatus, film forming method, manufacturing method for organic el device and liquid discharge device |
US7335604B2 (en) | 2002-02-22 | 2008-02-26 | Seiko Epson Corporation | Thin-film coating apparatus |
-
1990
- 1990-01-19 JP JP1110190A patent/JPH03214722A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
US7335604B2 (en) | 2002-02-22 | 2008-02-26 | Seiko Epson Corporation | Thin-film coating apparatus |
JP2004160336A (en) * | 2002-11-12 | 2004-06-10 | Seiko Epson Corp | Film forming apparatus, film forming method, manufacturing method for organic el device and liquid discharge device |
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