CN109136856B - Film thickness monitoring device and film forming equipment - Google Patents
Film thickness monitoring device and film forming equipment Download PDFInfo
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- CN109136856B CN109136856B CN201811229923.9A CN201811229923A CN109136856B CN 109136856 B CN109136856 B CN 109136856B CN 201811229923 A CN201811229923 A CN 201811229923A CN 109136856 B CN109136856 B CN 109136856B
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- film thickness
- shielding plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
Abstract
The invention belongs to the technical field of display, and particularly relates to a film thickness monitoring device and film forming equipment. This thick monitoring devices of membrane is including thick synchronizing unit, thick synchronizing unit includes sensor and shielding plate, a plurality of monitoring holes have been seted up on the shielding plate, the shielding plate can be relative the sensor motion, so that at least two are different the drill way of monitoring hole can with the sensor sets up to be relative, passes through in the monitoring time the monitoring hole reachs the film-forming material volume of sensor, the sensor is the crystal oscillator piece. The film thickness monitoring device prolongs the service life of the crystal oscillator wafer and improves the service efficiency of the crystal oscillator wafer on the premise of ensuring the accuracy of film thickness monitoring; according to the film forming equipment, the tool coefficient value matched with the aperture radius of the monitoring hole of the shielding plate in the film thickness monitoring device is selected, so that the material deposition on the crystal oscillator wafer cannot be too fast or too slow, the film forming speed is kept stable, and accurate film thickness monitoring is realized.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a film thickness monitoring device and film forming equipment.
Background
Compared with LCD (Liquid crystal display), OLED (Organic Light-Emitting Diode) has the advantages of wide color gamut, fast response speed, wide viewing angle, foldability, etc., and thus attracts a lot of manufacturers to invest a lot of funds to develop the OLED. At present, OLED technology is adopted in display products and lighting products in the market, and the trend of replacing LCD to become the mainstream display of the next generation is large.
At present, the preparation process of the OLED device is mainly a thermal Evaporation (Evaporation) mode, namely, the layer structure material is heated through high temperature, and the thickness of the layer structure material is monitored at the same time, so that the layer structure of the OLED device meeting the requirements is formed. For example, the Film thickness (Film thickness) is monitored by a Crystal oscillator (Crystal) installed inside the evaporation chamber, and the evaporation material is synchronously deposited on the substrate to be evaporated and the Crystal oscillator. Along with the increase of the evaporation deposition quality of the layer structure material on the crystal oscillator plate, the vibration frequency of the crystal oscillator plate can be reduced, and the film thickness monitoring error is large. After the service life of the crystal oscillator wafer is over, the crystal oscillator wafer needs to be replaced by opening the cavity, and the production progress is influenced. Too fast deposition of materials on the crystal oscillator wafer can shorten the service life (Lifetime) of the crystal oscillator wafer, and too slow deposition can cause great speed fluctuation, so that the film thickness is not accurately monitored, and the contradiction that the film thickness is difficult to reconcile is caused.
How to prolong the service life of the crystal oscillator wafer and improve the service efficiency of the crystal oscillator wafer on the premise of ensuring the accuracy of film thickness monitoring becomes a technical problem to be solved urgently at present.
Disclosure of Invention
The invention aims to solve the technical problem of the prior art, and provides a film thickness monitoring device and a film forming device, which can prolong the service life of a crystal oscillator wafer and improve the service efficiency of the crystal oscillator wafer on the premise of ensuring the accuracy of film thickness monitoring.
The technical scheme adopted for solving the technical problem is that the film thickness monitoring device comprises a film thickness synchronizing unit, wherein the film thickness synchronizing unit comprises a sensor and a shielding plate, a plurality of monitoring holes are formed in the shielding plate, the shielding plate can move relative to the sensor, so that the orifices of at least two different monitoring holes can be arranged opposite to the sensor, and the film forming material quantity reaching the sensor through the monitoring holes in a set time is monitored.
Preferably, the shielding plate is arranged in parallel with the plane of the surface of the sensor, and the openings of the monitoring holes are different in size.
Preferably, the monitoring holes are spaced apart from each other at an edge area of the shielding plate, centered on the center of the shielding plate.
Preferably, the outer contour of the shielding plate is circular, the orifices of the monitoring holes are circular with different radiuses, and the distance between the circle center of each circular and the center of the shielding plate is the same.
Preferably, the film thickness monitoring device further comprises a driving unit, and the driving unit drives the shielding plate to rotate by taking the center of the shielding plate as a center.
Preferably, the driving unit is a motor, and an output shaft of the motor is connected to a center of the shielding plate.
Preferably, the sensor is disposed adjacent to the shielding plate, and a projection of the sensor is located within a front projection of the shielding plate.
Preferably, the sensor is a crystal oscillator plate.
A film forming device comprises a film forming material source and a film thickness monitoring device, wherein the film thickness monitoring device is the film thickness monitoring device, and a film forming material emitted by the film forming material source reaches a sensor through a monitoring hole of a shielding plate.
Preferably, the film forming material source comprises at least one evaporation crucible, the evaporation crucible is used for containing evaporation materials, and each evaporation crucible is correspondingly provided with one film thickness monitoring device.
The invention has the beneficial effects that:
the film thickness monitoring device prolongs the service life of the crystal oscillator wafer and improves the service efficiency of the crystal oscillator wafer on the premise of ensuring the accuracy of film thickness monitoring;
according to the film forming equipment, the tool coefficient value matched with the aperture radius of the monitoring hole of the shielding plate in the film thickness monitoring device is selected, so that the material deposition on the crystal oscillator wafer cannot be too fast or too slow, the film forming speed is kept stable, and accurate film thickness monitoring is realized.
Drawings
Fig. 1 is a schematic structural view of a film thickness monitoring apparatus in embodiment 1 of the present invention;
FIG. 2 is a schematic view showing a partial structure of a film forming apparatus in example 2 of the present invention;
in the drawings, wherein:
1-a film thickness monitoring device; 11-a sensor; 12-a shutter; 121-monitoring holes; 13-sealing the cover;
2-a substrate to be evaporated;
3-evaporation crucible.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the film thickness monitoring device and the film forming apparatus of the present invention will be described in further detail with reference to the accompanying drawings and the specific embodiments.
Example 1:
the embodiment provides a thick monitoring devices of membrane, and this thick monitoring devices of membrane passes through the shutter and the regulation of film-forming material formation volume, under the prerequisite of guaranteeing thick monitoring accuracy of membrane, prolongs the life of crystal oscillator piece, improves the availability factor of crystal oscillator piece.
As shown in fig. 1, the film thickness monitoring apparatus includes a film thickness synchronization unit, the film thickness synchronization unit includes a sensor 11 and a Shutter 12(Shutter), the Shutter 12 has a plurality of monitoring holes 121, the Shutter 12 can move relative to the sensor 11, so that the openings of at least two different monitoring holes 121 can be set opposite to the sensor 11 to monitor the amount of film-forming material reaching the sensor 11 through the monitoring holes 121 within a set time.
The film thickness monitoring device is set in the same condition as an object to be monitored in a film forming process when monitoring the film thickness. The film thickness monitoring apparatus actually monitors the film thickness based on the film thickness formed on the surface of the sensor 11. Preferably, the shielding plate 12 is disposed parallel to the plane of the surface of the sensor 11, and the plurality of monitoring holes 121 have different opening sizes. Thus, the area reduction of the monitoring hole 21 in the shielding plate 12 relative to the sensor 11 due to the inclination can be eliminated, and only the size of the opening of the monitoring hole 121 is required to be visually selected, thereby facilitating automatic positioning selection.
The monitoring holes 121 are spaced apart from the edge of the shielding plate 12, centered on the center of the shielding plate 12. In view of the easy control of the monitoring stop, the edge region of the shielding plate 12 may be left without being perforated corresponding to a partial region larger than the surface area of the sensor 11, so that the sensor 11 may be in a hidden state.
Preferably, the outer contour of the shielding plate 12 is set to be circular, the openings of the plurality of monitoring holes 121 are circular with different radii, and the distance between the center of each circle and the center of the shielding plate 12 is the same, so that the monitoring holes 121 with different film thicknesses and suitable sizes can be selected.
In the film thickness monitoring device, the sensor 11 is disposed adjacent to the shielding plate 12, and the projection of the sensor 11 is located within the orthographic projection of the shielding plate 12. Therefore, the shielding plate 12 is located in such an area that any one of the monitoring holes 121 can be opposed to the sensor 11, respectively.
In order to improve the alignment accuracy and the alignment efficiency, the film thickness monitoring apparatus further includes a driving unit, which drives the shielding plate 12 to rotate around the center of the shielding plate 12. Preferably, the drive unit is a motor (not shown in fig. 1), the output shaft of which is connected to the center of the shutter 12. By arranging the shutter 12 as a disc with different aperture radii and connecting the disc to the motor. When the film thickness is to be monitored, the sensor 11 can be controlled to be exposed (corresponding to the region where the monitor hole 121 is opened) or hidden (corresponding to the region where the monitor hole 121 is not opened) corresponding to the shield plate 12 by the rotation of the motor, thereby controlling the amount of the film forming material reaching the sensor 11 through the monitor hole 121.
The sensor 11 is a crystal oscillator. Preferably, the sensor 11 and the shutter 12 are disposed in a cover 13 having an opening to strictly ensure independence of the film formation monitoring environment.
The film thickness monitoring device of this embodiment changes into a disc that has different trompil radiuses through shielding plate 12 with the crystal oscillator piece to make this disc can rotate along with the motor, when carrying out thick monitoring, choose the aperture of suitable monitoring hole 121 for use, can compromise the life and the thick monitoring accuracy of membrane or the speed monitoring accuracy of crystal oscillator piece.
The use method of the film thickness monitoring device comprises the following steps: according to the film forming rate, the aperture radius of the monitoring hole 121 in the shielding plate 12 is selected to obtain a proper tool coefficient value, so that the film forming rate to be monitored is highly consistent with the film forming rate on the crystal oscillator wafer; when the sensor 11 needs to be closed, the shielding plate 12 rotates to a position where the crystal oscillator piece corresponds to a position without a hole, so that the service life of the crystal oscillator piece and the speed monitoring accuracy are both considered well.
The film thickness monitoring device prolongs the service life of the crystal oscillator wafer and improves the service efficiency of the crystal oscillator wafer on the premise of ensuring the film thickness monitoring accuracy.
Example 2:
this embodiment also provides a film forming apparatus capable of greatly improving the film thickness accuracy control by using the film thickness monitoring device in embodiment 1.
The film forming apparatus includes a film forming material source and a film thickness monitoring device, as shown in fig. 2, which is the film thickness monitoring device 1 in embodiment 1, and the film forming material emitted from the film forming material source reaches the sensor 11 through the monitoring hole 121 of the shutter 12.
As an example, the film forming apparatus may be, for example, an evaporation apparatus, which is adapted to the process flow of a modern manufacturing enterprise, the film forming material source includes at least one evaporation crucible 3, the evaporation crucible 3 is used for containing evaporation material, and each evaporation crucible 3 is correspondingly provided with a film thickness monitoring device 1.
The inside coating by vaporization cavity that forms of coating by vaporization equipment, coating by vaporization crucible 3 set up in the bottom in the coating by vaporization cavity, treat that coating by vaporization base plate 2 and thick monitoring devices 1 set up the top in the coating by vaporization cavity, treat that coating by vaporization base plate 2 is located the central authorities of coating by vaporization cavity, and thick monitoring devices 1 of membrane is generally fixed directly over coating by vaporization crucible 3 or upper right side. Preferably, the film thickness monitoring device 1 is placed upside down on the top of the chamber with the opening of the lid 13 facing downward and close to one evaporation crucible 3.
In the evaporation process, the evaporation material is heated by energizing a heating wire around the evaporation crucible 3. Evaporate when the temperature reaches behind certain numerical value the coating by vaporization, the coating by vaporization material in the coating by vaporization crucible 3 becomes the gaseous state, inside diffusing the coating by vaporization cavity, coating by vaporization material passes through the opening of closing cap 13, get into closing cap 13 after the trompil of shielding plate 12, closing cap 13 opening is fixed, coating by vaporization material when the evaporation meets that the top temperature is lower can condense the film formation after treating coating by vaporization base plate 2 or sensor 11, deposit at the upper surface of treating coating by vaporization base plate 2 or sensor 11, treat during the coating by vaporization that coating by vaporization base plate 2 maintains thick homogeneity through the rotation, carry out real time monitoring through thick monitoring devices 1 of membrane to the coating by vaporization speed simultaneously.
The crystal oscillator piece has certain vibration frequency, calculates the material evaporation rate of depositing on the crystal oscillator piece through the frequency change of crystal oscillator piece, then calculates the rate of depositing on treating evaporation coating substrate 2 through the instrument coefficient value (toolfactor) of input to the realization is to the monitoring of evaporation coating rate. The opening of the cover 13, the distance and the angle between the sensor 11 and the evaporation source are fixed in the factory, the tool coefficient value of the sensor 11 in the evaporation process is related to the parameters, the larger the opening of the monitoring hole 121 is, the smaller the selected tool coefficient value is, the faster the deposition rate of the evaporation material on the crystal oscillator piece is, and the service life of the crystal oscillator piece is reduced. Generally, the value of the tool coefficient of the film forming equipment is 40-50%, and the effects of the service life of the crystal oscillator wafer and the film forming precision can be better considered.
Therefore, the film forming equipment selects the tool coefficient value matched with the aperture radius of the monitoring hole of the baffle plate in the film thickness monitoring device, so that the material deposition on the crystal oscillator wafer cannot be too fast or too slow, the film forming speed is kept stable, and the accurate film thickness monitoring is realized.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. A film thickness monitoring device comprises a film thickness synchronizing unit and is characterized in that the film thickness synchronizing unit comprises a sensor and a shielding plate, a plurality of monitoring holes are formed in the shielding plate, the shielding plate can move relative to the sensor, so that the orifices of at least two different monitoring holes can be arranged opposite to the sensor, and the amount of film forming materials reaching the sensor through the monitoring holes within set time is monitored;
the shielding plate is arranged in parallel with the plane of the surface of the sensor, and the sizes of the openings of the monitoring holes are different;
the monitoring holes are arranged at the edge area of the shielding plate at intervals by taking the center of the shielding plate as the center;
the outer contour of the shielding plate is circular, the orifices of the monitoring holes are circular with different radiuses, and the distance between the circle center of each circle and the center of the shielding plate is the same.
2. The film thickness monitoring apparatus according to claim 1, further comprising a driving unit that rotates the shutter around the center of the shutter.
3. The film thickness monitoring apparatus according to claim 2, wherein the driving unit is a motor, and an output shaft of the motor is connected to a center of the shielding plate.
4. The film thickness monitoring device according to any one of claims 1 to 3, wherein the sensor is disposed adjacent to the shielding plate, and a projection of the sensor is located within a front projection of the shielding plate.
5. The film thickness monitoring device according to any one of claims 1 to 3, wherein the sensor is a crystal plate.
6. A film forming apparatus comprising a film forming material source and a film thickness monitoring device, wherein the film thickness monitoring device is the film thickness monitoring device according to any one of claims 1 to 5, and a film forming material emitted from the film forming material source reaches the sensor through the monitoring hole of the shutter.
7. The film forming apparatus according to claim 6, wherein the film forming material source comprises at least one evaporation crucible for containing an evaporation material, and each evaporation crucible is provided with one of the film thickness monitoring devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229923.9A CN109136856B (en) | 2018-10-22 | 2018-10-22 | Film thickness monitoring device and film forming equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229923.9A CN109136856B (en) | 2018-10-22 | 2018-10-22 | Film thickness monitoring device and film forming equipment |
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| CN109136856A CN109136856A (en) | 2019-01-04 |
| CN109136856B true CN109136856B (en) | 2020-08-14 |
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| CN201811229923.9A Active CN109136856B (en) | 2018-10-22 | 2018-10-22 | Film thickness monitoring device and film forming equipment |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110257791B (en) * | 2019-04-29 | 2021-07-20 | 昆山国显光电有限公司 | Speed monitoring device, evaporation equipment and evaporation method |
| CN110306165B (en) * | 2019-08-15 | 2021-01-22 | 苏州清越光电科技股份有限公司 | Film thickness monitoring device and thin film deposition equipment |
| CN110835742A (en) * | 2019-10-30 | 2020-02-25 | 深圳市华星光电半导体显示技术有限公司 | Crystal probe shade device |
| CN112458407B (en) * | 2020-11-27 | 2023-06-02 | 江苏集萃有机光电技术研究所有限公司 | Crystal oscillator measurement system, crystal oscillator measurement method and crystal oscillator measurement device |
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| JP2014070969A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Rate sensor, linear source and vapor deposition device |
| CN205679212U (en) * | 2016-04-01 | 2016-11-09 | 深圳市三海科技有限公司 | A kind of structure extending quartz crystal film thickness measuring scope |
| CN107385406A (en) * | 2017-05-22 | 2017-11-24 | 茆胜 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006028561A (en) * | 2004-07-14 | 2006-02-02 | Olympus Corp | Film deposition system and film deposition method |
| JP2012012689A (en) * | 2010-07-05 | 2012-01-19 | Canon Inc | Method and apparatus for vacuum evaporation |
| CN107565062B (en) * | 2017-07-20 | 2019-10-11 | 武汉华星光电半导体显示技术有限公司 | Thickness monitoring instrument and evaporator |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014070969A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Rate sensor, linear source and vapor deposition device |
| CN205679212U (en) * | 2016-04-01 | 2016-11-09 | 深圳市三海科技有限公司 | A kind of structure extending quartz crystal film thickness measuring scope |
| CN107385406A (en) * | 2017-05-22 | 2017-11-24 | 茆胜 | Coating system and its film thickness monitoring device and film plating process and its film thickness monitoring method |
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