CN110257791B - Speed monitoring device, evaporation equipment and evaporation method - Google Patents
Speed monitoring device, evaporation equipment and evaporation method Download PDFInfo
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- CN110257791B CN110257791B CN201910356905.5A CN201910356905A CN110257791B CN 110257791 B CN110257791 B CN 110257791B CN 201910356905 A CN201910356905 A CN 201910356905A CN 110257791 B CN110257791 B CN 110257791B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
Abstract
The invention provides a rate monitoring device, evaporation equipment and an evaporation method. The speed monitoring device comprises a baffle assembly, a film thickness detection assembly and a plurality of crystal oscillator pieces, wherein the baffle assembly comprises a body, a first opening and a second opening which are formed in the body, and a first baffle which is arranged on the body and used for closing and exposing the second opening, the body shields the crystal oscillator pieces, one crystal oscillator piece is exposed out of the first opening, the other crystal oscillator piece is exposed out of the second opening, and the film thickness detection assembly is used for detecting the film thickness of an evaporation material layer deposited on the crystal oscillator piece exposed out of the first opening so as to determine the evaporation speed. The invention has higher production efficiency during evaporation.
Description
Technical Field
The invention relates to the technical field of display, in particular to a rate monitoring device, evaporation equipment and an evaporation method.
Background
Currently, in the process of preparing an Organic Light-Emitting Diode (OLED) by a vacuum evaporation process, a crystal oscillator system is often used to monitor the evaporation rate of an evaporation source in an evaporation chamber, and the evaporation rate of the evaporation source is adjusted to control the thickness of an Organic Light-Emitting material film formed by evaporation.
The existing crystal oscillator system is provided with a plurality of crystal oscillator pieces, and when materials are deposited on the crystal oscillator pieces, the vibration frequency of the crystal oscillator pieces can change along with the change of the mass of the crystal oscillator pieces so as to monitor the evaporation rate of an evaporation source. Specifically, the crystal oscillator system is provided with a plurality of crystal oscillator pieces hidden behind the baffle, and one crystal oscillator piece is exposed by moving the crystal oscillator seat at each time to deposit materials so as to realize the detection of the evaporation rate.
However, when evaporation is performed, the adhesion of the metal material to be evaporated, such as magnesium and ytterbium, on the crystal oscillator plate is not good, so that all the crystal oscillator plates need to be pre-deposited one by one before continuous production, and the pre-deposition of each crystal oscillator plate takes tens of minutes, which causes that the crystal oscillator system needs to wait for a long time before being applied to a vacuum evaporation process, thereby seriously reducing the vacuum evaporation efficiency.
Disclosure of Invention
The invention provides a speed monitoring device, an evaporation device and an evaporation method, which have high production efficiency during evaporation.
In a first aspect, the invention provides a rate monitoring device for monitoring an evaporation rate of an evaporation apparatus, the rate monitoring device includes a baffle assembly, a film thickness detection assembly and a plurality of crystal oscillator plates, the baffle assembly includes a body, a first opening and a second opening provided on the body, and a first baffle provided on the body for closing and exposing the second opening, the body shields the plurality of crystal oscillator plates, the first opening exposes one crystal oscillator plate, the second opening exposes another crystal oscillator plate, and the film thickness detection assembly is configured to detect a film thickness of an evaporation material layer deposited on the crystal oscillator plate exposed by the first opening, so as to determine the evaporation rate.
In a second aspect, the present invention provides an evaporation apparatus comprising an evaporation source and a rate monitoring device as described above, wherein the first opening and the second opening face the evaporation source.
In a third aspect, the present invention provides a vapor deposition method for performing vapor deposition by the vapor deposition apparatus, including: starting an evaporation source for evaporation; then, detecting the film thickness of the evaporation material layer deposited on the crystal oscillator wafer exposed by the first opening through a film thickness detection assembly to determine the evaporation rate; exposing the second opening through the first baffle plate so as to perform pre-deposition on the other crystal oscillator wafer exposed by the second opening; and finally, when the thickness of the predeposited film of the other crystal oscillator plate meets the preset predepositing standard, closing the second opening through the first baffle.
The speed monitoring device is used for monitoring the evaporation rate of the evaporation equipment and comprises a baffle assembly, a film thickness detection assembly and a plurality of crystal oscillator pieces, wherein the baffle assembly comprises a body, a first opening and a second opening which are formed in the body, and a first baffle which is arranged on the body and used for sealing and exposing the second opening, the body shields the crystal oscillator pieces, one crystal oscillator piece is exposed out of the first opening, the other crystal oscillator piece is exposed out of the second opening, and the film thickness detection assembly is used for detecting the film thickness of an evaporation material layer deposited on the crystal oscillator piece exposed out of the first opening so as to determine the evaporation rate. Therefore, the second opening can be opened within a preset time period before the crystal oscillator plate is switched, so that the crystal oscillator plate to be switched is subjected to pre-deposition of a material film layer before the switching, and after the crystal oscillator plate to be switched is switched to the detection position, the evaporation rate monitoring task can be directly carried out without waiting for the pre-deposition process of the film layer, so that the process time is saved, and the production efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an evaporation apparatus in which a rate monitoring device according to a first embodiment of the present invention is located;
FIG. 2 is a schematic structural diagram of a rate monitoring device according to an embodiment of the present invention when a second opening is closed;
FIG. 3 is a schematic structural diagram of a rate monitoring device according to an embodiment of the present invention when a second opening is opened;
fig. 4 is a schematic diagram of relative positions of a rate monitoring device and an evaporation source according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a connection of control elements of a rate monitoring apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a control element connection of another rate monitoring apparatus according to an embodiment of the present invention;
fig. 7 is a schematic flow chart of an evaporation method according to a third embodiment of the present invention.
Description of reference numerals:
1. 11, 12-crystal oscillation plate; 2-a baffle plate assembly; 21 — a first opening; 22 — a second opening; 23 — a first baffle; 24-a body; 25 — a second baffle; 251-a notch; 3-a first controller; 4-film thickness detector; 5, a timer; 6-a second controller; 7-a drive element; 10-evaporation equipment; 20-evaporation source; 30-rate monitoring means; 40-substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the production and manufacture of OLED display panels, vacuum evaporation is required to plate a film layer on the surface of a substrate or other component. When vacuum evaporation is carried out, specifically, a component to be formed into a film is arranged in a vacuum environment, evaporation materials of an evaporation source are evaporated or sublimated through heating, and then the gasified evaporation materials are deposited on the surface to be formed into the film, so that the film coating is completed. The evaporation equipment for evaporation generally comprises an evaporation chamber and evaporation sources such as a crucible located in the evaporation chamber. In the evaporation operation, a substrate or the like is placed in an evaporation chamber, and an evaporation source such as a crucible is heated to eject an evaporation material in the crucible from the crucible and deposit the material on the surface of the substrate.
Wherein, in order to monitor the coating by vaporization rate when carrying out the coating by vaporization, the coating by vaporization equipment is still including rate monitoring device, rate monitoring device is including crystal oscillator seat and the crystal oscillator piece of setting on crystal oscillator seat, the position that crystal oscillator piece was located is arranged in the evaporation chamber of coating by vaporization equipment equally, perhaps communicates with the evaporation chamber, treat the coating by vaporization part like this when coating by vaporization equipment, for example the base plate carries out the coating by vaporization operation, the coating by vaporization material not only can deposit on the base plate surface and form the target rete, also can deposit on the surface of the crystal oscillator piece of coating by vaporization equipment and form the rete simultaneously. When the crystal oscillator piece takes place quality, when volumetric change because of the deposit rete, the crystal oscillator piece can produce great and easily detected amplitude change under piezoelectric resonance's effect, and rate monitoring device can detect the change of rete thickness on the crystal oscillator piece through the change to amplitude isoparametric like this to monitor the coating by vaporization rate of the rete on the crystal oscillator piece, and further monitor the coating by vaporization rate of whole coating by vaporization equipment and the thickness of target rete.
In order to accurately detect the evaporation rate, the crystal oscillator plate is deposited for a certain time, and after the film layer on the crystal oscillator plate reaches a certain thickness, the other crystal oscillator plate is switched to deposit. However, when the rate monitoring device utilizes the crystal oscillator plates to detect and monitor the evaporation rate, the adhesion of evaporation materials such as magnesium, ytterbium and the like on the surfaces of the crystal oscillator plates is poor, so that all the crystal oscillator plates are pre-deposited one by one before continuous production to ensure normal rate monitoring, 15-20 minutes is required for each crystal oscillator plate, more than 150 minutes is required for 10 crystal oscillator plates, the production efficiency is influenced, and due to the long pre-deposition time and use time interval or other reasons, the problem that the crystal oscillator plates which are pre-deposited fail in use exists, the normal monitoring rate cannot be monitored after the crystal oscillator plates are switched, and the production is influenced.
Therefore, the speed monitoring device is used in the evaporation equipment and monitors the evaporation speed of the evaporation equipment, and the speed monitoring device can improve the evaporation efficiency. Fig. 1 is a schematic structural diagram of an evaporation apparatus in which a rate monitoring device according to an embodiment of the present invention is located. As shown in fig. 1, a rate monitoring device is provided in the vapor deposition apparatus 10 for monitoring the vapor deposition rate of the vapor deposition apparatus 10, and the vapor deposition apparatus 10 further includes a vapor deposition source 20. Specifically, the evaporation source 20 of the evaporation apparatus 10 and the component to be evaporated, for example, the substrate 40 are both located inside the chamber of the evaporation apparatus 10, and the rate monitoring device 30 is disposed near the evaporation source 20. In this way, when the vapor deposition apparatus 10 performs a vapor deposition operation on a member to be vapor deposited, for example, a substrate 40, the rate monitoring device 30 can monitor the vapor deposition rate. Fig. 2 is a schematic structural diagram of a rate monitoring device according to an embodiment of the present invention when a second opening is closed. Fig. 3 is a schematic structural diagram of a rate monitoring device according to an embodiment of the present invention when a second opening is opened. Fig. 4 is a schematic diagram of relative positions of the rate monitoring device and the evaporation source according to an embodiment of the present invention. As shown in fig. 1 to 4, the rate monitoring device 30 includes a baffle assembly 2, a film thickness detection assembly, and a plurality of crystal plates 1, wherein the baffle assembly 2 is used for shielding between the crystal plates 1 and the evaporation source 20. A plurality of crystal oscillator pieces 1 can be arranged on a crystal oscillator seat (not shown in the figure) according to a certain sequence or law in proper order to through the rotatory removal of crystal oscillator seat, let crystal oscillator pieces 1 switch over to the detection position in evaporation equipment 10 one by one and deposit the rete of coating by vaporization material, let the thick detection module of membrane carry out the coating film speed and detect the function like this. Specifically, the crystal oscillator plates 1 may be arranged in a ring shape or in other arrangement manners, and after the film layer is deposited to a certain thickness, the crystal oscillator plate 11 being detected may be switched to the next crystal oscillator plate 12 adjacent to the currently detected crystal oscillator plate, and detection is continued, and so on until all the crystal oscillator plates complete the detection function. The baffle plate assembly 2 comprises a body 24, a first opening 21 and a second opening 22 which are arranged on the body 24, and a first baffle plate 23 which is arranged on the body 24 and is used for closing and exposing the second opening 22. The body 24 is located between the crystal oscillator plate 1 and the evaporation source 20 of the evaporation apparatus 10, and is used for shielding the plurality of crystal oscillator plates 1, and the first opening 21 exposes one crystal oscillator plate of the plurality of crystal oscillator plates 1, and the second opening 22 exposes another crystal oscillator plate. Specifically, the position of the first opening 21 may correspond to a crystal oscillator plate for depositing an evaporation material, that is, the first opening 21 is for enabling the crystal oscillator plate 11 to deposit the evaporation material; and the position of the second opening 22 corresponds to the position of the wafer 12 to be switched, so that the first opening 21 can expose the wafer 11 being tested, and the second opening 22 exposes the wafer 12 to be switched. The film thickness detection component can be specifically used for detecting the film thickness of the crystal oscillator plate exposed by the first opening 21, that is, the film thickness of the evaporation material layer deposited on the crystal oscillator plate 11 being detected, so as to determine the evaporation rate of the evaporation device 10.
In order to deposit a film with a certain thickness on the wafer 12 to be switched before the wafer is switched, the first baffle 23 is movably arranged at the second opening 22, so that the second opening 22 is opened and the wafer 12 to be switched is exposed, or the second opening 22 is closed to seal the wafer 12 to be switched. Therefore, the second opening 22 can be opened for a preset time period before the switching of the wafer 1, so that the wafer 12 to be switched is subjected to pre-deposition (pre-coating) of a material film before the switching.
Since the first opening 21 and the second opening 22 are used to deposit the evaporation material on the crystal oscillator plate 1, a shielding baffle assembly 2 is disposed between the crystal oscillator plate 1 and the evaporation source 20 of the evaporation apparatus 10 to isolate the evaporation source 20 from other crystal oscillator plates except the crystal oscillator plate 11 being detected. At this time, in order to allow the detecting crystal plate 11 at the detecting position to contact the evaporation material evaporated by the evaporation source, the first opening 21 is provided in the body 24 of the shutter assembly 2 at the detecting position corresponding to the exposed detecting crystal plate 11, so that the evaporation material can be deposited on the surface of the detecting crystal plate 11 through the first opening 21. Specifically, the evaporation material includes at least one of magnesium and ytterbium.
Further, a second opening 22 is opened in the body 24 of the baffle assembly 2. The second opening 22 corresponds to the wafer 12 to be switched and exposes the wafer 12 to be switched. Since the movable first baffle 23 is arranged on the second opening 22, the second opening 22 is an openable and closable opening along with the change of the position of the first baffle 23 relative to the second opening 22, so that when the second opening 22 is closed by moving the first baffle 23, the crystal oscillator piece 12 to be switched is isolated from the evaporation source 20 together with other crystal oscillator pieces except the crystal oscillator piece 11 being detected; when the second opening 22 is opened, the wafer 12 to be switched and the wafer 11 under test are deposited together. Therefore, the pre-deposition process of the material film layer can be performed on the wafer 12 to be switched before the switching by controlling the opening time of the second opening 22, for example, allowing the second opening 22 to be opened for a preset time period before the switching of the wafer. When the crystal oscillator plate 12 to be switched is switched to the detection position, the surface of the crystal oscillator plate is fully deposited with a material film layer, so that the normal evaporation rate can be ensured at the beginning of detection, and the situation that the evaporation rate is greatly fluctuated can not occur. Therefore, the evaporation rate monitoring task can be directly carried out without waiting for the pre-deposition process of the film layer, so that the working procedure time is saved, and the production efficiency is improved.
It should be noted that the opening time of the second opening 22 is a preset time period before the wafer 12 to be switched is switched to the detection position. Therefore, the crystal oscillator plate 12 to be switched can be enabled to deposit a film layer with a certain thickness when being switched, so that the time for performing film layer pre-deposition after the crystal oscillator plate is switched is saved, and meanwhile, the crystal oscillator plate 12 to be switched is still isolated from the evaporation source 20 before the film layer is pre-deposited, so that the crystal oscillator plate is prevented from being influenced by the evaporation source 20 at the stage.
The rate monitoring device 30 can control the opening time of the second opening 22 in various ways, for example, by providing a control element in the evaporation apparatus 10, and controlling the second opening 22 to open or close at a preset time or when a preset condition is met, or manually opening or closing the second opening 22. The time period required for the pre-deposition may be a time taken to perform the pre-deposition process in advance and check the pre-deposition to a predetermined film thickness, or may be obtained by other empirical data.
Since the normal adhesion of magnesium, ytterbium, or other metal materials to the surface of the to-be-switched crystal oscillator plate 12 can be ensured as long as the surface of the to-be-switched crystal oscillator plate is deposited with a material film layer with a certain thickness, the predeposition of the to-be-switched crystal oscillator plate 12 can be realized as long as the second opening 22 is opened within a time period sufficient for depositing the material film layer with the thickness.
At this time, optionally, the film thickness measuring assembly of the rate monitoring device 30 further includes a film thickness detector 4, the film thickness detector 4 is electrically connected to the first controller 3, and the film thickness detector 4 is configured to detect the thickness of the film layer to be pre-deposited on the wafer 12 to be switched. The film thickness measuring instrument 4 may be used for detecting the film thickness on the crystal oscillator wafer 12 to be switched and the film thickness on the crystal oscillator wafer 11 being detected at the same time, or the film thickness measuring instrument 4 may be used for detecting the film thickness on the crystal oscillator wafer 12 to be switched, and an independent film thickness detecting instrument is additionally used for detecting the film thickness on the crystal oscillator wafer 11 being detected.
Specifically, fig. 5 is a schematic diagram of a connection of a control element of a rate monitoring apparatus according to an embodiment of the present invention. As shown in fig. 5, optionally, the corresponding speed monitoring device 30 may further include a first controller 3 connected to the film thickness detecting assembly, where the first controller 3 is configured to control the first baffle 23 to expose the second opening 22, and close the second opening 22 when the film thickness detecting assembly detects that the film thickness deposited on the wafer exposed by the second opening 22, that is, the wafer 12 to be switched, exceeds a preset film thickness threshold. Therefore, the second opening 22 can be opened before the switching of the crystal oscillator piece, the crystal oscillator piece 12 to be switched is subjected to film pre-deposition, and the opening and closing state of the second opening 22 is controlled according to the film thickness on the crystal oscillator piece 12 to be switched, so that the film on the crystal oscillator piece 12 to be switched is closed after reaching the preset film thickness. Specifically, the speed monitoring device 30 may perform detection or estimation through the film thickness measuring apparatus 4 in the film thickness detecting assembly, or other sensors and means, so as to obtain the thickness of the material film deposited on the to-be-switched crystal oscillator plate 12 in the pre-deposition state, and control the second opening 22 to continuously open and expose the to-be-switched crystal oscillator plate 12, until the film thickness reaches the preset film thickness, and then close the second opening 22. Specifically, the first controller 3 can change the open-closed state of the second opening 22 by controlling the position of the first shutter 23 covering the second opening 22. At this time, the first controller 3 is electrically connected to the driving element 7 on the second opening 22, and the driving element 7 can drive the first blocking plate 23 to move and cover the second opening 22 or move away from the second opening 22.
At this time, since the time length of the pre-deposition of the wafer 12 to be switched can be determined by the thickness of the film deposited on the wafer, as an alternative embodiment, the duration of the preset time period for which the second opening 22 is opened before the wafer is switched can be set as: the time for the material film deposited on the pre-deposited crystal oscillator plate 12 to be switched to reach the preset film thickness is obtained. Since the wafer 12 to be switched contacts the evaporation material through the opening of the second opening 22 before the wafer is switched, the evaporation material can be adhered and deposited on the wafer 12 to be switched in advance. When the material film layer on the crystal oscillator plate 12 to be switched is deposited to the preset film layer thickness, the normal evaporation rate can be achieved, and at this time, the evaporation can be performed together with a component to be coated, such as the substrate 40, and the evaporation rate monitoring task can be achieved.
In particular, the structure and type of the first controller 3 may be varied, for example configured as one or more integrated circuits, such as: one or more Application Specific Integrated Circuits (ASICs), or one or more microprocessors (DSPs), or one or more Field Programmable Gate Arrays (FPGAs), among others. For another example, when one of the above modules is implemented in the form of a Processing element scheduler code, the Processing element may be a general-purpose processor, such as a Central Processing Unit (CPU) or other processor capable of calling program code. For another example, these modules may be integrated together and implemented in the form of a system-on-a-chip (SOC).
It should be noted that the control manner of the first controller 3 for the open/close state of the second opening 22 may be various, for example, the second opening 22 may be continuously opened until the film on the to-be-switched crystal oscillator 12 reaches the preset film thickness; it is also possible to have the second openings 22 open at intervals, etc.
The film thickness that the crystal oscillator piece 12 of waiting to switch was deposited is detected to sensors such as the direct thick detection subassembly of utilization like this, can carry out comparatively accurate control to film thickness to let crystal oscillator piece 1 keep comparatively accurate and unanimous coating by vaporization speed when switching, reduce the floating of the coating by vaporization speed of crystal oscillator piece 1 when switching.
In another alternative embodiment, instead of detecting the film thickness of the wafer 12 to be switched, a pre-experiment may be performed to obtain experimental data, or the time and duration of the second opening 22 to be opened may be obtained directly by means of empirical values. This allows the second opening 22 to be opened for a predetermined length of time before switching the wafer, thereby completing the pre-deposition process. Fig. 6 is a schematic diagram of a connection of control elements of another rate monitoring apparatus according to an embodiment of the present invention. As shown in fig. 6, at this time, the evaporation apparatus 10 further includes a timer 5 and a second controller 6, where the second controller 6 is configured to count data from the timer 6, and control the first shutter 23 to expose the second opening 22 for a first preset time period, and then close the second opening 22. At this time, the open/close state of the second opening 22 is substantially controlled by the timer 6. The specific structure and the operation principle of the second controller 6 may be similar to those of the first controller 4, and may be, for example, a specific integrated circuit, or one or more microprocessors, or one or more field programmable gate arrays, and so on, which are not described herein again. And it should be noted that the first controller and the second controller may be only logically divided differently by the same controller. For example, the same processor or control chip may be relied upon to implement different functions of the first controller and the second controller, respectively. In this case, the first controller and the second controller may be integrated in a general-purpose processor, such as a central processing unit or a system on a chip.
Specifically, similar to the first controller 3, the second controller 6 may be electrically connected to the driving element 7 on the second opening 22, and the driving element 7 may drive the first blocking plate 23 to move and cover the second opening 22 or move away from the second opening 22.
Specifically, since the approximate deposition rate of the crystal oscillator plate during the film layer deposition can be obtained according to experiments or production experience, the approximate deposition rate of the crystal oscillator plate to be switched during the pre-deposition can be obtained according to experimental data or empirical values, and the deposition time can be obtained according to the deposition rate and the required film layer thickness. Therefore, the timer 5 may be disposed on the rate monitoring device 30, and the timer 5 may perform timing, so as to obtain the time required for performing the pre-deposition according to the empirical data, and the second controller 6 may obtain the timing data from the timer 5, and further allow the first baffle 23 to expose the second opening 22 for the first preset time period, and then close the second opening 22, so as to control the open or close state of the second opening 22. The required deposition time is generally in positive correlation with the required film thickness and the ratio of the deposition rate, so that the opening of the first baffle can be controlled without adding an additional film thickness measuring instrument, and the rate monitoring device 30 is simple in structure and low in cost.
Specifically, when the duration of the preset time period for which the second opening 22 is opened and the start and end time points are controlled by means of the timer 5 or the like, there may be a variety of different specific setting manners. For example, optionally, according to the experimental data, when the first preset time period is generally between 0.5 hour and 1 hour, the pre-deposition of the material film layer on the wafer 12 to be switched may be achieved.
At this time, the second opening 22 may be opened and exposed from the time before the switching of the crystal plate to the time when the crystal plate is switched, wherein the time duration of this time duration may also be the first preset time duration, i.e., between 0.5 hour and 1 hour.
Thus, the second opening may be opened and exposed from a certain time point before the switching from the crystal oscillator plate, for example, the first time, until the time point of the switching of the crystal oscillator plate, and the time duration between the two time points may be a first preset time duration. During this time period, the evaporation material of the evaporation source 20 may be deposited onto the surface of the wafer 12 to be switched through the second opening 22 until the pre-deposition process of the material film layer is completed.
Specifically, the second controller 6 may control the first baffle 23 to move and expose the second opening 22 at a certain time point before the switching of the wafer, for example, at a first time, so as to implement the pre-deposition of the wafer 12 to be switched, and at the same time, the timer 5 performs timing; then when the timer 5 times to 0.5 to 1 hour, namely the first preset time, the second controller 6 moves the first baffle 23 and closes the second opening 22, and the switching of the crystal oscillator wafer can be performed after the second opening 22 is closed, so that the time interval from the pre-deposition to the normal detection of the film coating rate of the crystal oscillator wafer 12 to be switched is short, and the detection accuracy and reliability can be improved. The time interval between the first time and the time point of the switching of the crystal oscillator plate is greater than or equal to a first preset time length.
In addition, the preset time period for opening the second opening 22 can also be set in other different forms and time periods, which can be specifically set by those skilled in the art according to actual needs or specific characteristics of the evaporation material, and is not limited herein.
In addition, in an alternative embodiment, the rate monitoring device 30 may also be provided with other operating elements and allow the user to manually open or close the second opening 22. In particular, the operation element may be operated by means of a mechanical or electrical command, which is not limited herein.
Further, in order to achieve the above-described closing and exposure of the second opening 22, a detailed description of the structure of the shutter assembly 2 will be given below.
Specifically, in the baffle plate assembly 2, the body 24 is blocked between the crystal holder and the evaporation source 20. The body 24 has a generally flat plate-like configuration, and is preferably in the shape of a rotator such as a disc. The first opening 21 of the body 24 will be opposite to the detecting crystal plate 11 at the detecting position for the crystal plate to detect the evaporation rate, and the first baffle 23 is movably arranged relative to the body 24, so that the position of itself relative to the second opening 22 can be changed. When the first baffle 23 blocks and closes the second opening 22, the other crystal plates except the crystal plate 11 being detected are isolated from the evaporation source 10; when the first shutter 23 is removed from the second opening 22 and the second opening 22 is opened, the wafer 12 to be switched is in the pre-deposition state and the deposition of the evaporation material is performed.
Specifically, since the crystal oscillator plates 1 are all disposed on the crystal oscillator base, when switching is required, the crystal oscillator base 1 rotates around its axis, and the crystal oscillator plates 1 can be driven by the crystal oscillator base 1 to move. Thus, the wafer 12 to be switched rotates to the original position of the wafer 11 under test, i.e. the position opposite to the first opening 21; the crystal oscillation plate in the detection position is moved away from the position opposite to the first opening 21 and is shielded by the body 24.
Since the first baffle 23 and other structures on the baffle assembly 2 need to be provided with additional mounting structures or need to have a certain rotation distance, in order to avoid interference between the corresponding structures of the first baffle 23 and other structures in the baffle assembly 2 and the structures of the body 24 at the first opening 21 when the second opening 22 is opened or closed, optionally, at least one crystal oscillator piece 1 may be spaced between the second opening 22 and the first opening 21.
For example, in the present embodiment, the wafer 11 being tested and the wafer 12 to be switched are not adjacent to each other, but are separated by one wafer 1. Accordingly, the first opening 21 of the wafer 11 corresponding to the detection position and the second opening 22 of the wafer 12 corresponding to the position to be switched are separated by one wafer 1. So that there is a sufficient distance between the first opening 21 and the second opening 22, when the second opening 22 is opened or closed, the first baffle 23 or other movable shielding structure will not interfere with the structure at the first opening 21, so as to be able to be opened or closed normally.
In this embodiment, since the crystal oscillator plates 1 are arranged in a ring shape, when the crystal oscillator plates 1 are switched, the crystal oscillator plates 1 can be rotated and switched according to a certain sequence (for example, clockwise in the figure), and one crystal oscillator plate 1 is spaced between the crystal oscillator plate 11 being detected and the crystal oscillator plate 12 to be switched. Thus, the crystal oscillation pieces 1 are sequentially switched until all the crystal oscillation pieces 1 on the crystal oscillation seat execute the detection task. At this time, in order to avoid the situation that the detected crystal oscillator plates are switched to the detection position when the crystal oscillator plates 1 are switched in rotation, the number of the crystal oscillator plates 1 may be odd, so that when the crystal oscillator plates 1 are switched in turn, the crystal oscillator plates to be switched are always new crystal oscillator plates until all the crystal oscillator plates 1 are switched in rotation.
In addition, as an optional mode, a second baffle 25 may be further included in the baffle assembly 2, the second baffle 25 is connected to the body 24, and the second baffle 25 is disposed between the wafer 11 under inspection and the evaporation source 20, so as to close the first opening 21 after exposing the first opening 21 for a second preset time. Specifically, the second baffle 25 may periodically close the first opening 21, and during each movement cycle, the second baffle 25 has a time for closing the first opening 21 and exposing the first opening 21, so that the first opening 21 can be exposed for a second preset time length by controlling the time ratio of the second baffle 25 for closing the first opening 21 and exposing the first opening 21 during each movement cycle.
Specifically, the thickness of the film deposited on the wafer 11 being tested is affected when the second barrier 25 closes the first opening 21. When the second shutter 25 closes the first opening 21, the position of the wafer 11 being tested is opposite to the first opening 21, so the wafer is blocked and the evaporation material is not deposited, and when the second shutter 25 exposes the first opening 21, the wafer 11 being tested opposite to the first opening 21 can be normally evaporated. Therefore, by controlling the ratio of the second preset time length to the movement period of the second shutter 25, the deposition rate of the film layer on the crystal oscillator can be adjusted to be smaller than the deposition rate of the evaporation material on the crystal oscillator under normal conditions. Then, the evaporation rate detected on the crystal oscillator plate can be reduced to the evaporation rate which the crystal oscillator plate should have when not being shielded by the second baffle 25 through software compensation measures. On one hand, the thickness of a film layer deposited on the crystal oscillator wafer can be reduced while monitoring of the evaporation rate is realized, and therefore the service life of the crystal oscillator wafer is prolonged. At this time, the second preset time period may be related to the time period of the movement period of the second shutter 25.
Wherein the second shutter 25 can be connected to the body 24 and moved in various ways, for example, it can be arranged on the first opening 21 in a reversible manner, and when the second shutter 25 is opened in a reversed manner, the first opening 21 is exposed.
And in an alternative embodiment, a second baffle 25 is pivotally connected to the body 24. At this time, the second shutter 25 rotates periodically around the pivot axis, and the duration of each turn is equivalent to each movement period of the second shutter 25.
Further, in order to allow the second shutter 25 to expose or close the first opening 21 during the periodic rotation, optionally, the second shutter 25 has a notch 251 at an edge thereof, the area of the notch 251 is larger than that of the first opening 21, and the notch 251 moves with the second shutter 25 and passes over the first opening 21.
Specifically, the notch 251 is disposed at the edge of the second baffle 25, so that the rotation track of the notch 251 has an overlap with the projection of the first opening 21 on the second baffle 25; in each rotation cycle of the second shutter 25, when the second shutter 25 rotates to a position where the notch 251 is opposite to the first opening 21, the first opening 21 is in an open state at this time because the first opening 21 is not shielded by the second shutter 25 at this time.
Specifically, when second baffle 25 is rotatory, the position of the breach 251 of seting up on the second baffle 25 can be periodic variation to every turn, or second baffle 25 is rotatory a removal cycle, the breach 251 all can seal first opening 21 once, and is corresponding, the crystal oscillator piece 11 that is detecting is sheltered from, can not deposit the coating by vaporization material, and the breach 251 is located and is relative with first opening 21, so that when the position that makes first opening 21 expose, the crystal oscillator piece 11 that is detecting can normally carry out the coating by vaporization.
Specifically, the ratio between the actual evaporation rate of the crystal oscillator plate and the deposition rate of the evaporation material is consistent with the ratio of the arc length of the notch 251 corresponding to the circumferential direction of the second baffle 25 to the entire circumference of the second baffle 25. When the second shutter 25 rotates, the notch 251 is an open notch region between both ends of the second shutter 25 in the circumferential direction, and this region does not cause a shield to the first opening 21. The distance between the two ends of the notch 251 in the circumferential direction of the second baffle 25 can be measured by the ratio of the distance to the central angle of the second baffle 25. For example, two ends of the notch 251 in the circumferential direction of the second baffle 25 respectively form a connection line with the central axis of the second baffle 25, and an included angle formed by the two connection lines is a central angle formed by the two ends of the notch 251 relative to the central axis of the second baffle 25. In this case, both ends of the notch 251 in the circumferential direction of the second shutter 25, that is, both edge positions of the notch 251 in the circumferential direction of the second shutter 25.
Specifically, in the present embodiment, both ends of the notch 251 in the circumferential direction of the second shutter 25 may form a central angle greater than or equal to 18 ° with respect to the central axis of the second shutter 25, that is, greater than or equal to 1/20 of the circumferential range of the entire second shutter 25. Thus, the gap 251 occupies a proportion of the second shutter 25 that is greater than or equal to 1/20(18 °/360 °), and the deposition of the evaporation material is reduced by 1/20 or more. Therefore, the normal monitoring of the crystal oscillator plate on the evaporation rate can be ensured, and the service life of the crystal oscillator plate is prolonged. The central angle ratio of the gap 251 on the second baffle 25 can be adjusted according to the evaporation requirement and the different evaporation materials.
In this embodiment, for example, the second baffle 25 may be a circular baffle, and the notch 251 may be a sector-shaped notch, in which case, the notch 251 may occupy a part of a central angle of the entire circumference of the second baffle 25, and the rate of depositing the evaporation material on the wafer passing through the first opening 21 may be changed by adjusting the central angle of the sector-shaped notch 251. The second baffle 25 may have a different shape such as a square shape, and is not limited herein.
Of course, it is understood that the second shutter 25 may not be disposed at the first opening 21, but may be exposed to simplify the structure of the shutter assembly 2 or to achieve a higher evaporation rate of the wafer being inspected.
In this embodiment, rate monitoring device is used for monitoring the coating by vaporization rate of coating by vaporization equipment, rate monitoring device includes the baffle subassembly, thick detection element of membrane and a plurality of crystal oscillator pieces, the baffle subassembly includes the body, set up first opening and second opening on the body, and set up the first baffle that is used for sealing and exposes the second opening on the body, the body shelters from a plurality of crystal oscillator pieces, first opening exposes a crystal oscillator piece, the second opening exposes another crystal oscillator piece, thick detection element of membrane is used for detecting the membrane thickness of the coating by vaporization material layer that deposits on the crystal oscillator piece that first opening exposes, in order to confirm the coating by vaporization rate. Therefore, the second opening can be opened within a preset time period before the crystal oscillator plate is switched, so that the crystal oscillator plate to be switched is subjected to pre-deposition of a material film layer before being switched, and after the crystal oscillator plate to be switched is switched to a detection position, an evaporation rate monitoring task can be directly carried out without waiting for the pre-deposition process of the film layer, so that the process time is saved, and the production efficiency is improved.
Example two
The invention also provides evaporation equipment. The evaporation equipment provided by the embodiment comprises an evaporation source and a rate monitoring device, wherein a first opening and a second opening in the rate monitoring device face the evaporation source. The specific structure, function and operation principle of the rate monitoring apparatus have been described in detail in the first embodiment, and are not described herein again.
Specifically, as shown in fig. 1 to 6, the evaporation apparatus 10 includes an evaporation source 20 and a rate monitoring device 30. Specifically, the evaporation source 20 of the evaporation apparatus 10 and the component to be evaporated, for example, the substrate 40 are both located inside the chamber of the evaporation apparatus 10, and the rate monitoring device 30 is disposed near the evaporation source 20. The evaporation source 20 of the evaporation apparatus 10 may include a crucible or the like.
During evaporation, the evaporation source 20 of the evaporation device 10 releases an evaporation material, the evaporation material can be deposited on the surface of the substrate 40, and the first opening and the second opening in the rate monitoring device 30 both face the evaporation source 20, so that the crystal oscillator plates exposed by the first opening and the second opening can deposit a film layer and detect the evaporation rate, thereby monitoring the parameters such as the evaporation rate of the evaporation device 10 and ensuring the normal operation of evaporation.
In this embodiment, the evaporation apparatus includes an evaporation source and a rate monitoring device; wherein, rate monitoring device is used for monitoring the coating by vaporization rate of coating by vaporization equipment, rate monitoring device includes the baffle subassembly, thick detection element and a plurality of crystal oscillator pieces of membrane, the baffle subassembly includes the body, set up first opening and second opening on the body, and set up the first baffle that is used for sealing and exposes the second opening on the body, the body shelters from a plurality of crystal oscillator pieces, first opening exposes a crystal oscillator piece, another crystal oscillator piece is exposed to the second opening, thick detection element of membrane is used for detecting the membrane thickness of the coating by vaporization material layer that deposits on the crystal oscillator piece that first opening exposes, in order to confirm the coating by vaporization rate. The second opening on the baffle plate component can be opened in a preset time period before the crystal oscillator piece is switched, so that the crystal oscillator piece to be switched is subjected to pre-deposition of a material film layer before being switched, and after the crystal oscillator piece to be switched is switched to a detection position, an evaporation rate monitoring task can be directly carried out without waiting for the pre-deposition process of the film layer, so that the process time is saved, and the production efficiency is improved.
EXAMPLE III
The invention also provides an evaporation method. The evaporation method in this embodiment may be applied to the rate monitoring device in the first embodiment or the evaporation apparatus in the second embodiment, so that when the rate monitoring device in the evaporation apparatus switches the crystal plate, the time for performing film pre-deposition after the crystal plate is switched is saved. Fig. 7 is a schematic flow chart of an evaporation method according to a third embodiment of the present invention. As shown in fig. 7, specifically, the evaporation method in this embodiment may specifically include the following steps:
and S101, starting a vapor deposition source to perform vapor deposition.
At this point, the evaporation source begins to evaporate the material so that the material can be deposited onto the surface of the substrate or other object to be evaporated.
S102, detecting the film thickness of the evaporation material layer deposited on the crystal oscillator piece exposed out of the first opening through the film thickness detection assembly to determine the evaporation rate.
When evaporation is performed, the evaporation rate of the evaporation equipment needs to be detected by a rate detection device. Specifically, the rate detection device is provided with a film thickness detection assembly, and the film thickness detection assembly can detect the film thickness of the evaporation material layer deposited on the crystal oscillator piece exposed by the first opening, so as to determine the evaporation rate. At this time, the wafer exposed by the first opening is the wafer being detected.
S103, exposing the second opening through the first baffle plate, so that the other crystal oscillator piece exposed by the second opening is subjected to pre-deposition.
Specifically, in the speed monitoring devices in the first and second embodiments, in the baffle assembly for shielding the crystal oscillator piece, the body is provided with the second opening at the position corresponding to the crystal oscillator piece to be switched, and the exposed or closed state of the second opening can be switched by the movement of the first baffle, so that the second opening can be exposed before the crystal oscillator piece is switched by the movement of the first baffle, and another crystal oscillator piece exposed by the second opening, that is, the crystal oscillator piece to be switched contacts with the evaporated material in the preset time period before the crystal oscillator piece is switched, so as to perform the pre-deposition process.
And S104, when the pre-deposition film thickness of the other crystal oscillator plate meets the preset pre-deposition standard, closing the second opening through the first baffle.
When the second opening is exposed for a long time, the second opening can be closed after the film layer with a certain thickness is deposited on the other crystal oscillator piece exposed by the second opening, namely the crystal oscillator piece to be switched, and the predeposition process is stopped. The thickness of the pre-deposited film of the crystal oscillator piece can meet the preset pre-deposition standard, and the crystal oscillator piece with the film layer with the thickness on the surface can avoid the phenomena of speed fluctuation and the like when the evaporation rate is detected.
In this way, the time for pre-deposition of the wafer to be switched is before the wafer is switched, and the beginning and the end of the pre-deposition process are controlled by the movement of the first baffle and the exposure or the closing of the second opening.
Wherein the starting time point of the pre-deposition process can be obtained by experimental data or empirical values. For example, the detection can be performed by the film thickness detection component, the predeposition time required for predeposition is completed by detecting the crystal oscillator plate under the same condition, and the duration of the interval between the starting time point and the crystal oscillator plate switching time point is greater than or equal to the predeposition time. For example, the pre-deposition time required by the crystal oscillator plate to complete the pre-deposition can be the time required by the crystal oscillator plate surface to deposit a film layer with a predetermined thickness. Specifically, in the previous predeposition process, a film thickness measuring instrument or other instrument is used to detect the film thickness on the surface of the crystal oscillator piece, and a timer is used to detect the time from the beginning of the predeposition process until the film thickness on the surface of the crystal oscillator piece reaches a preset thickness, where the time is the predeposition time required by the crystal oscillator piece.
The duration of the preset time period before the switching of the crystal oscillator plate, that is, the time length between the start time point and the end time point of the pre-deposition process, can also be determined in various ways. For example, it may be obtained by experimental data or empirical values; or the thickness of a film layer deposited on the crystal oscillator to be switched can be monitored in real time by utilizing instruments such as a film thickness measuring instrument and the like, so that a processor can calculate and judge; alternatively, the duration of the preset time period may be manually controlled by a human. Various specific setting manners of the duration of the preset time period can refer to the description of the relevant parts in the first embodiment. Wherein, optionally, the exposure time of the second baffle plate when the pre-deposition process is completed may be a first preset time period, and the first preset time period is between 0.5 hours and 1 hour.
After the pre-deposition process is completed, the crystal oscillator plate exposed by the second opening, namely the crystal oscillator plate to be switched, can be switched to the detection position exposed by the first opening, and the film plating rate of the evaporation source is directly detected by the crystal oscillator plate exposed by the first opening at present.
Because the crystal oscillator plate to be switched is deposited with a film layer with a certain thickness through pre-deposition before being switched to the detection position, the evaporation material can have a normal evaporation rate on the crystal oscillator plate. Therefore, after the crystal oscillator plate to be switched is switched to the detection position, the extra time is not needed to be spent for carrying out the pre-deposition, and the newly switched crystal oscillator plate can be directly utilized to detect the film coating rate of the evaporation source. Specifically, the time for switching the crystal oscillator plate and the time for completing the pre-deposition can be separated by a period of time, or the crystal oscillator plate switching can be directly performed at the time point of completing the pre-deposition.
Like this in speed monitoring device, through letting the crystal oscillator piece that treats the switching carry out the preliminary deposition process of material rete promptly before switching, can avoid the crystal oscillator piece to carry out the preliminary deposition of rete again after the switching to save process time, when also having avoided simultaneously the crystal oscillator piece to switch back and carry out the rete deposit, because the undulant phenomenon of evaporation coating rate that initial rete arouses at crystal oscillator piece surface adhesion nature, effectively promoted the efficiency of evaporation coating and the reliability that evaporation coating rate detected like this.
In this embodiment, the evaporation method specifically includes starting an evaporation source to perform evaporation; detecting the film thickness of the evaporation material layer deposited on the crystal oscillator wafer exposed by the first opening through a film thickness detection assembly so as to determine the evaporation rate; then exposing the second opening through the first baffle plate, so that the other crystal oscillator piece exposed by the second opening is subjected to pre-deposition; and finally, when the thickness of the predeposited film of the other crystal oscillator plate meets the preset predepositing standard, closing the second opening through the first baffle. Therefore, when the film deposition is carried out after the switching of the crystal oscillator piece, the phenomenon of fluctuation of the evaporation rate caused by poor adhesion of the initial film layer on the surface of the crystal oscillator piece is avoided, and the evaporation efficiency and the reliability of detection of the evaporation rate are effectively improved.
Those of ordinary skill in the art will understand that: all or a portion of the steps of implementing the above-described method embodiments may be performed by hardware associated with program instructions. The program may be stored in a computer-readable storage medium. When executed, the program performs steps comprising the method embodiments described above; and the aforementioned storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic or optical disks.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A speed monitoring device is used for monitoring the evaporation rate of evaporation equipment and is characterized by comprising a baffle assembly, a film thickness detection assembly and a plurality of crystal oscillator plates, wherein the baffle assembly comprises a body, a first opening and a second opening which are formed in the body, and a first baffle which is arranged on the body and used for closing and exposing the second opening, the body shields the crystal oscillator plates, one crystal oscillator plate is exposed from the first opening, the other crystal oscillator plate is exposed from the second opening, and the film thickness detection assembly is used for detecting the film thickness of an evaporation material layer deposited on the crystal oscillator plate exposed from the first opening so as to determine the evaporation rate;
the speed monitoring device further comprises a first controller connected with the film thickness detection assembly, wherein the first controller is used for controlling the first baffle to expose the second opening, and closing the second opening when the film thickness of the crystal oscillator wafer exposed by the second opening, detected by the film thickness detection assembly, exceeds a preset film thickness threshold value; or
The speed monitoring device comprises a second controller and a timer connected with the second controller, wherein the controller is used for acquiring timing data from the timer and controlling the first baffle to be exposed to the second opening for a first preset time length and then to close the second opening.
2. The rate monitoring device of claim 1, wherein the baffle assembly further comprises a second baffle coupled to the body, the second baffle configured to close the first opening after exposing the first opening for a second predetermined length of time.
3. The rate monitoring device of claim 2, wherein the second baffle is pivotally connected to the body.
4. The rate monitoring device of claim 3, wherein the edge of the second baffle has a notch, the notch having an area greater than the area of the first opening; the notch moves along with the second baffle and passes through the upper part of the first opening.
5. The rate monitoring device of claim 1, wherein the second opening and the first opening are separated by at least one of the crystal plates.
6. The rate monitoring device of claim 1, wherein the first flap is pivotally connected to the body.
7. An evaporation apparatus comprising an evaporation source and the rate monitoring device according to any one of claims 1 to 6, wherein the first opening and the second opening face the evaporation source.
8. An evaporation method, characterized in that the method is used for evaporation by the evaporation device of claim 7, and the method comprises the following steps:
starting the evaporation source for evaporation;
detecting the film thickness of the evaporation material layer deposited on the crystal oscillator wafer exposed by the first opening through the film thickness detection assembly to determine the evaporation rate;
exposing the second opening through the first baffle plate so as to perform pre-deposition on the other crystal oscillator wafer exposed by the second opening;
and when the thickness of the predeposited film of the other crystal oscillator wafer meets a preset predepositing standard, the second opening is closed by the first baffle.
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| CN110670044B (en) * | 2019-11-27 | 2021-10-01 | 昆山国显光电有限公司 | Film formation thickness detection device, detection method and evaporation equipment |
| CN113106411A (en) * | 2021-04-13 | 2021-07-13 | 京东方科技集团股份有限公司 | Coating film detection device and coating film equipment |
| CN113278945B (en) * | 2021-05-10 | 2023-09-01 | 布勒莱宝光学设备（北京）有限公司 | Film thickness monitoring device, film plating equipment and film thickness monitoring method |
| CN113981379B (en) * | 2021-11-04 | 2023-11-17 | 京东方科技集团股份有限公司 | Evaporation rate detection device, evaporation device and evaporation rate detection method |
| CN114395755B (en) * | 2022-01-07 | 2023-11-28 | 京东方科技集团股份有限公司 | Crystal oscillator disk structure and use method thereof |
| CN114836727B (en) * | 2022-04-20 | 2024-04-09 | 广东振华科技股份有限公司 | System and method for detecting film thickness of each layer of multilayer film system |
| CN115992344A (en) * | 2022-12-20 | 2023-04-21 | 江苏宜兴德融科技有限公司 | Crystal vibrating diaphragm thickness monitoring device and coating equipment |
| CN116536640B (en) * | 2023-05-18 | 2024-01-23 | 江苏宜兴德融科技有限公司 | Crystal vibrating diaphragm thickness monitoring device and coating equipment |
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