CN114395755B - Crystal oscillator disk structure and use method thereof - Google Patents
Crystal oscillator disk structure and use method thereof Download PDFInfo
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- CN114395755B CN114395755B CN202210015407.6A CN202210015407A CN114395755B CN 114395755 B CN114395755 B CN 114395755B CN 202210015407 A CN202210015407 A CN 202210015407A CN 114395755 B CN114395755 B CN 114395755B
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- 239000013078 crystal Substances 0.000 title claims abstract description 249
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 235000012431 wafers Nutrition 0.000 claims description 77
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to the technical field of OLED preparation and discloses a crystal oscillator disk structure and a using method thereof, wherein the crystal oscillator disk structure comprises a shell, a disk body and a driving assembly; the tray body comprises an inner circle and an outer circle; the driving assembly comprises a first driving device and a second driving device, the first driving device is used for driving the inner circle to rotate, and the second driving device is used for driving the outer ring to rotate; the first surface of the inner circle is provided with a plurality of crystal oscillator sheets, the second surface of the inner circle is provided with a plurality of first electrodes, and the plurality of first electrodes are arranged in one-to-one correspondence with the plurality of crystal oscillator sheets arranged on the first surface of the inner circle; the first surface of the outer ring is provided with a plurality of crystal oscillator sheets, the second surface of the outer ring is provided with a plurality of second electrodes, the plurality of second electrodes are arranged in one-to-one correspondence with the crystal oscillator sheets arranged on the first surface of the outer ring, and the first electrodes and the second electrodes are used for analog data transmission; the disk body is installed in the shell, has the through-hole on the shell, and the through-hole is used for exposing a crystal oscillator piece that is located the interior circle and/or a crystal oscillator piece that is located the outer loop.
Description
Technical Field
The application relates to the technical field of OLED preparation, in particular to a crystal oscillator disk structure and a using method thereof.
Background
With the development of technology, organic light emitting diodes (Organic Light Emitting Diode, OLED) display is a popular technology for research in various fields today.
In the OLED preparation process in the prior art, an evaporation machine heats a material into atoms or atomic groups through an evaporation source, the material is deposited on a glass substrate to form a film layer through a certain free path, and in the process, in order to ensure the uniformity of the film layer and the target film thickness, the speed in the evaporation process needs to be monitored, so that effective regulation and control are performed; the film thickness controller in the film thickness control system utilizes the piezoelectric effect of the crystal oscillator sheet to measure the change of the oscillation frequency of the crystal oscillator sheet, and utilizes a digital-to-analog converter to convert the analog quantity into the digital quantity so as to further measure the thickness of the film. Each detection probe is provided with a crystal oscillator disk, each disk is provided with 10 crystal oscillator sheets, the crystal oscillator sheets are distributed on the disk in a circumferential direction, the included angle between the connecting circle centers of every two crystal oscillator sheets is 36 degrees, the crystal oscillator sheets are covered by a cover plate, and the cover plate is only provided with a round hole so that one crystal oscillator sheet is exposed and used as the crystal oscillator sheet currently used; the crystal oscillator piece is used as a consumable product, the service life of the crystal oscillator piece is gradually exhausted along with the accumulation of materials on the crystal oscillator piece in the process, the detection effect is reduced, and the crystal oscillator piece needs to be switched to the next crystal oscillator piece at the moment.
However, after switching to the next crystal oscillator wafer, since the initial rate of the new crystal oscillator wafer is 0, it takes time before the actual rate of the current process is reached, and the rate at this time cannot be monitored, the film forming process cannot be performed, and the period of time cannot be produced normally; for some special materials, such as magnesium (Mg), ytterbium (Yb) and other metal materials, the crystal oscillator sheet needs to be pre-formed in advance before the speed of the crystal oscillator sheet is monitored, so that the speed of the crystal oscillator sheet can be monitored stably in the process without abnormal fluctuation, at present, only one crystal oscillator sheet can be pre-formed at a time, and the production time of 200 hours at a time approximately needs 4 crystal oscillator sheets, so that the production preparation time is prolonged, and the available production time is reduced.
Disclosure of Invention
The application provides a crystal oscillator disk structure and a use method thereof, wherein the crystal oscillator disk structure can save invalid time when two crystal oscillator wafers are switched, and can shorten the pre-film forming time of the crystal oscillator wafers for vapor deposition materials of special materials.
In order to achieve the above purpose, the present application provides the following technical solutions:
a crystal oscillator disk structure comprises a shell, a disk body and a driving component; the disc body comprises an inner circle and an outer ring sleeved on the outer side of the inner circle, and the center point is the center of the inner circle and the outer ring; the driving assembly comprises a first driving device and a second driving device, the first driving device is used for driving the inner ring to rotate around the central point, and the second driving device is used for driving the outer ring to rotate around the central point; the first surface of the inner circle is provided with a plurality of crystal oscillator plates around the circumference of the central point, the second surface of the inner circle is provided with a plurality of first electrodes, the plurality of first electrodes are arranged in one-to-one correspondence with the plurality of crystal oscillator plates arranged on the first surface of the inner circle, and the first electrodes are used for simulating data transmission; the first surface of the outer ring is circumferentially provided with a plurality of crystal oscillator plates around the center point, the second surface of the outer ring is provided with a plurality of second electrodes, the second electrodes are arranged in one-to-one correspondence with the crystal oscillator plates arranged on the first surface of the outer ring, and the second electrodes are used for analog data transmission; the disk body is installed in the shell, has the through-hole on the shell, and the through-hole is used for exposing a crystal oscillator piece that is located the interior circle and/or a crystal oscillator piece that is located the outer loop.
The crystal oscillator disk provided by the application is characterized in that crystal oscillator sheets positioned in an inner circle are named as first crystal oscillator sheets, crystal oscillator sheets positioned in an outer ring are named as second crystal oscillator sheets, and first detection of the first crystal oscillator sheets is taken as an example for explanation:
when the evaporation rate is required to be detected, starting the first driving device and the second driving device to adjust the positions of the first crystal oscillator piece and the second crystal oscillator piece relative to the through hole, so that one first crystal oscillator piece in an initial state is exposed out of the through hole to detect the evaporation rate;
when the service life of the exposed first crystal oscillator piece is about to be exhausted, starting the second driving device to enable the outer ring to rotate around the central point, so that the second crystal oscillator piece in an initial state is exposed out of the through hole;
when the service life of the exposed first crystal oscillator piece is exhausted, starting the first driving device to enable the inner circle to rotate around the central point, so that the first crystal oscillator piece with the exhausted service life is removed from the through hole position;
when the service life of the exposed second crystal oscillator piece is about to be exhausted, starting the first driving device to enable the inner circle to rotate around the central point so as to expose the first crystal oscillator piece in an initial state to the through hole;
when the service life of the exposed second wafer is exhausted, the second wafer with the exhausted service life is removed from the through hole position by starting the second driving device to enable the outer ring to rotate around the center point;
and so on until the life of all the first and second wafers are exhausted.
It should be noted that, the above detection process is exemplified by using the first crystal oscillator wafer to detect first, and the second crystal oscillator wafer may be used to detect first under actual working conditions, which is not limited in detail.
In addition, when the vapor deposition material is a metal material such as magnesium or ytterbium, all of the first crystal oscillator wafer and the second crystal oscillator wafer need to be subjected to a pre-film forming process before the vapor deposition rate is detected, specifically including:
starting the first driving device and the second driving device to adjust the positions of the first crystal oscillator piece and the second crystal oscillator piece relative to the through hole, and exposing one first crystal oscillator piece in a non-film-forming state and one second crystal oscillator piece in a non-film-forming state out of the through hole so as to perform pre-film-forming treatment;
after the pre-film forming of the exposed first crystal oscillator piece and the exposed second crystal oscillator piece is finished, starting the first driving device and the second driving device again to enable the inner circle and the outer circle to rotate, so that the first crystal oscillator piece and the second crystal oscillator piece after film forming are removed from the positions of the through holes, and then exposing one first crystal oscillator piece in a non-film forming state and one second crystal oscillator piece in a non-film forming state out of the through holes;
and pushing the film until the pre-film formation of all the first crystal oscillator wafers and the second crystal oscillator wafers is completed.
Therefore, in the detection process of the crystal oscillator disk, before the service life of one crystal oscillator piece is exhausted, the other crystal oscillator piece in the initial state can be exposed to the through hole in advance, so that the crystal oscillator piece in the initial state gradually reaches the actual speed of the current process, compared with the prior art, the invalid time (namely the time from the initial speed of the crystal oscillator piece in the initial state to the actual speed gradually reaching the current process) is saved when the two crystal oscillator pieces are switched, and the production efficiency is improved; in addition, when the vapor deposition material is a metal material such as magnesium or ytterbium, the pre-film forming treatment can be carried out on two crystal oscillator wafers at a time, so that the production preparation time is shortened, and the production efficiency is further improved.
Optionally, the plurality of crystal oscillator wafers positioned in the inner circle and the plurality of crystal oscillator wafers positioned in the outer ring are arranged in a one-to-one correspondence manner; when the crystal oscillator disk structure is in an initial state, in each group of crystal oscillator sheets which are mutually corresponding and positioned in the inner circle and the crystal oscillator sheets positioned in the outer ring: the connecting line between the crystal vibration plate positioned in the inner circle and the central point coincides with the connecting line between the crystal vibration plate positioned in the outer ring and the central point.
Optionally, the plurality of crystal oscillator plates located in the inner circle are evenly spaced, and the plurality of crystal oscillator plates located in the outer ring are evenly spaced.
Optionally, the number of crystal oscillator plates positioned in the inner circle and the number of crystal oscillator plates positioned in the outer ring are five.
Optionally, the first driving device comprises a first motor, a first coupling and a first transmission shaft; an output shaft of the first motor is connected with a first end of the first transmission shaft through a first coupler, and a second end of the first transmission shaft is fixedly connected with the center point.
Optionally, the second driving device comprises a second motor, a second coupling and a second transmission shaft; the outer circumference of the outer ring is provided with a gear ring in the circumferential direction; an output shaft of the second motor is connected with a first end of a second transmission shaft through a second coupler, a gear is arranged at a second end of the second transmission shaft, and the gear is meshed with the gear ring.
Optionally, the inner circle and the outer circle are connected by a bearing.
Optionally, the bearing is a ball bearing.
The utility model provides a use method suitable for arbitrary crystal oscillator disk structure of above-mentioned, crystal oscillator disk structure can detect the evaporation rate, specifically includes: starting the driving assembly to expose a first crystal oscillator piece in an initial state to the through hole so as to detect the evaporation rate; when the service life of the exposed first crystal oscillator piece is about to be exhausted, starting the driving assembly to expose a second crystal oscillator piece in an initial state to the through hole; after the service life of the exposed first crystal oscillator piece is exhausted, the first crystal oscillator piece with the exhausted service life is removed from the through hole position through the driving assembly; exposing a first crystal oscillator piece in an initial state to the through hole through the driving assembly when the service life of the exposed second crystal oscillator piece is about to be exhausted; after the service life of the exposed second wafer is exhausted, removing the second wafer with the exhausted service life from the through hole position through the driving assembly; pushing in this manner until the lifetime of all the first and second wafers is exhausted, wherein: the first crystal oscillator is arranged in the inner circle, and the second crystal oscillator is arranged in the outer ring; or the first crystal oscillator piece is arranged on the outer ring, and the second crystal oscillator piece is arranged on the inner circle.
Optionally, when the evaporation material is magnesium or ytterbium, before detecting the evaporation rate, performing a pre-film forming process on all the first crystal oscillator pieces and the second crystal oscillator pieces, specifically including: starting a driving assembly, and exposing a first crystal oscillator sheet in a non-film-forming state and a second crystal oscillator sheet in a non-film-forming state to the through hole to perform pre-film-forming treatment; after the pre-film forming of the exposed first crystal oscillator piece and the exposed second crystal oscillator piece is completed, the first crystal oscillator piece and the second crystal oscillator piece after film forming are removed from the positions of the through holes through the driving assembly, and then the first crystal oscillator piece in a non-film forming state and the second crystal oscillator piece in a non-film forming state are exposed out of the through holes; and pushing the film until the pre-film formation of all the first crystal oscillator wafers and the second crystal oscillator wafers is completed.
Drawings
FIG. 1 is a schematic diagram of a crystal oscillator disk structure according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating the assembly of a housing and a disk body in a crystal oscillator disk structure according to an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating steps of detecting vapor deposition rate by using a crystal oscillator disk structure according to an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating steps of a crystal oscillator disk structure according to an embodiment of the present application when a crystal oscillator wafer is subjected to a pre-film forming process;
fig. 5 is a flowchart of a method for using a crystal oscillator disk structure according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
FIG. 1 is a schematic diagram of a crystal oscillator disk structure according to an embodiment of the present application; FIG. 2 is a schematic diagram illustrating the assembly of a housing and a disk body in a crystal oscillator disk structure according to an embodiment of the present application; FIG. 3 is a schematic diagram illustrating steps of detecting vapor deposition rate by using a crystal oscillator disk structure according to an embodiment of the present application; FIG. 4 is a schematic diagram illustrating steps of a crystal oscillator disk structure according to an embodiment of the present application when a crystal oscillator wafer is subjected to a pre-film forming process; as shown in fig. 1 to fig. 4, the crystal oscillator disk structure provided by the embodiment of the application includes a housing 100, a disk body, and a driving assembly; the disc body is provided with a center point 300, the disc body comprises an inner circle 200 and an outer ring 400 sleeved outside the inner circle 200, and the center point 300 is the center of the inner circle 200 and the outer ring 400; the driving assembly includes a first driving device 500 for driving the inner circle 200 to rotate around the center point 300, and a second driving device 600 for driving the outer ring 400 to rotate around the center point 300; a plurality of crystal oscillator wafers 700 are arranged on the first surface of the inner circle 200 around the circumference of the central point 300, a plurality of first electrodes 800 are arranged on the second surface of the inner circle 200, the plurality of first electrodes 800 are arranged in one-to-one correspondence with the plurality of crystal oscillator wafers 700 arranged on the first surface of the inner circle 200, and the first electrodes 800 are used for analog data transmission; a plurality of crystal oscillator wafers 700 are arranged on the first surface of the outer ring 400 around the circumference of the central point 300, a plurality of second electrodes 900 are arranged on the second surface of the outer ring 400, the plurality of second electrodes 900 are arranged in one-to-one correspondence with the crystal oscillator wafers 700 arranged on the first surface of the outer ring 400, and the second electrodes 900 are used for analog data transmission; the disk body is mounted on the housing 100, and the housing 100 is provided with a through hole 101, wherein the through hole 101 is used for exposing one crystal oscillator wafer 700 positioned on the inner circle 200 and/or one crystal oscillator wafer 700 positioned on the outer ring 400.
In the crystal oscillator disk structure provided in this embodiment, the crystal oscillator piece located in the inner circle 200 is named as a first crystal oscillator piece 701, the crystal oscillator piece located in the outer ring 400 is named as a second crystal oscillator piece 702, and the first crystal oscillator piece 701 is used for detection as an example for explanation:
referring to fig. 1, 2 and (a) in fig. 3: when the evaporation rate needs to be detected, the first driving device 500 and the second driving device 600 are started to adjust the positions of the first crystal oscillator 701 and the second crystal oscillator 702 relative to the through hole 101, so that one first crystal oscillator 701 in an initial state is exposed out of the through hole 101 to detect the evaporation rate;
referring to fig. 1, 2 and (b) in fig. 3: when the life of the exposed first wafer 701' is about to be exhausted, the second driving device 600 is started to rotate the outer ring 400 around the center point 300, so that one second wafer 702 in an initial state is exposed out of the through hole 101;
referring to fig. 1, 2 and (c) in fig. 3: after the life of the exposed first wafer 701 "is exhausted, the first drive 500 is activated to rotate the inner circle 200 about the center point 300, thereby removing the life-exhausted first wafer 701" from the through-hole 101 location;
referring to fig. 1, 2 and (d) in fig. 3: when the life of the exposed second wafer 702' is about to be exhausted, the first driving device 500 is activated to rotate the inner circle 200 around the center point 300 so as to expose one first wafer 701 in an initial state to the through hole 101;
referring to fig. 1, 2 and (e) in fig. 3: after the lifetime of the exposed second wafer 702 "has been exhausted, the lifetime-exhausted second wafer 701" is removed from the through-hole 101 location by activating the second drive means 600 to rotate the outer ring 400 about the central point 300;
pushing in this manner until the lifetime of all of the first wafer 701 and the second wafer 702 is exhausted.
It should be noted that, in the present embodiment, the first crystal oscillator 701 is used for detection for example, and in an actual working condition, the second crystal oscillator 702 may be used for detection first, which is not limited specifically.
In addition, when the vapor deposition material is a metal material such as magnesium or ytterbium, it is necessary to perform a prefilming process on all of the first wafer 701 and the second wafer 702 before detecting the vapor deposition rate, and the method specifically includes:
referring to fig. 1, 2 and (a) in fig. 4: starting the first driving device 500 and the second driving device 600 to adjust the positions of the first crystal oscillator 701 and the second crystal oscillator 702 relative to the through hole 101, and exposing one first crystal oscillator 701 in a non-film-forming state and one second crystal oscillator 702 in a non-film-forming state to the through hole 101 for performing pre-film-forming treatment;
referring to fig. 1, 2, and to fig. 4 (a) and (b): after the pre-film forming of the exposed first crystal oscillator 701 'and second crystal oscillator 702' is completed, the first driving device 500 and the second driving device 600 are started again, so that the inner circle 200 and the outer circle 400 rotate, the first crystal oscillator 701 'and the second crystal oscillator 702' after film forming are removed from the positions of the through holes 101, and then the first crystal oscillator 701 in the non-film forming state and the second crystal oscillator 702 in the non-film forming state are exposed out of the through holes 101;
pushing in this manner until the prefilming of all the first wafer 701 and the second wafer 702 is completed.
Therefore, in the testing process, before the lifetime of one crystal oscillator wafer 700 is exhausted, the other crystal oscillator wafer 700 in the initial state can be exposed to the through hole 101 in advance, so that the crystal oscillator wafer 700 in the initial state gradually reaches the actual rate of the current process, compared with the prior art, the invalid time (that is, the time from the initial rate of the crystal oscillator wafer 700 in the initial state to the actual rate gradually reaching the current process) is saved when the two crystal oscillator wafers 700 are switched, and the production efficiency is improved; in addition, when the vapor deposition material is a metal material such as magnesium or ytterbium, the pre-film forming treatment can be performed on the two crystal oscillator wafers 700 at a time, so that the production preparation time is shortened, and the production efficiency is further improved.
As an alternative embodiment, a plurality of crystal oscillator wafers 700 located in the inner circle 200 and a plurality of crystal oscillator wafers 700 located in the outer ring 400 are disposed in a one-to-one correspondence; when the crystal plate structure is in an initial state, in each group of crystal plates 700 located in the inner circle 200 and crystal plates 700 located in the outer ring 400, which correspond to each other: the line between the crystal plate 700 located in the inner circle 200 and the center point 300 coincides with the line between the crystal plate 700 located in the outer ring 400 and the center point 300. The plurality of crystal oscillator wafers 700 located in the inner circle 200 are uniformly spaced apart, and the plurality of crystal oscillator wafers 700 located in the outer circle 400 are uniformly spaced apart.
With continued reference to fig. 3 and 4, in this embodiment, the crystal oscillator wafers 700 located in the inner circle 200 and the outer circle 400 are disposed at equal intervals in a one-to-one correspondence manner, so that the driving paths of the first driving device 500 and the second driving device 600 can be immobilized, thereby facilitating the operation. The following description will take five examples of the crystal oscillator wafer 700 located in the inner circle 200 and the crystal oscillator wafer 700 located in the outer ring 400:
when one crystal wafer 700 located in the inner circle 200 and one crystal wafer 700 located in the outer ring 400 are exposed out of the through hole 101, if the crystal wafer 700 located in the inner circle 200 is to be removed from the through hole 101, the first driving device 500 is only required to be started, and the inner circle 200 is rotated by 36 ° clockwise, as shown in fig. 3 (b) to (c).
If another crystal oscillator 700 located in the inner circle 200 is exposed out of the through hole 101, the first driving device 500 is continuously started, and the inner circle 200 is rotated by 36 degrees clockwise; as shown in fig. 3 (c) to (d).
The operation principle of the crystal oscillator 700 located on the outer ring 400 is the same, and only the second driving device 600 needs to be started, which is not described again.
It should be noted that, in the present embodiment, only the distance between the inner ring 200 and the outer ring 400 is controlled clockwise, and in actual working conditions, the inner ring 200 and the outer ring 400 may be rotated clockwise or counterclockwise by the driving assembly, which is not limited specifically.
Referring to fig. 1, as an alternative embodiment, a first driving device 500 includes a first motor 501, a first coupling 502, and a first transmission shaft 503; an output shaft of the first motor 501 is connected to a first end of a first transmission shaft 503 through a first coupling 502, and a second end of the first transmission shaft 503 is fixedly connected to the center point 300. The second driving device 600 includes a second motor 601, a second coupling 602, and a second transmission shaft 603; the outer ring 400 has a ring gear 401 around itself circumferentially; the output shaft of the second motor 601 is connected to a first end of a second transmission shaft 603 through a second coupling 602, the second end of the second transmission shaft 603 has a gear 604, and the gear 604 is meshed with the ring gear 401.
In this embodiment, when the inner circle 200 needs to be driven: when the first motor 501 is started, the output shaft of the first motor 501 drives the first transmission shaft 503 to rotate through the first coupling 502, and because the second end of the first transmission shaft 503 is fixedly connected with the center point 300, the inner circle 200 rotates along with the rotation of the first transmission shaft 503, thereby realizing the change of the position of the crystal oscillator wafer 700 on the inner circle 200.
When it is desired to drive the outer ring 400: when the second motor 601 is started, the output shaft of the second motor 601 drives the second transmission shaft 603 to rotate through the second coupling 602, and since the second end of the second transmission shaft 603 is provided with the gear 604 and the gear 604 is meshed with the gear ring 401 on the outer ring 400, the outer ring 400 rotates along with the rotation of the gear 604, so that the position of the crystal oscillator piece 700 on the outer ring 400 is changed.
As an alternative embodiment, the inner circle 200 is connected to the outer ring 400 by bearings.
In this embodiment, the arrangement of the bearings enables smoother relative rotation between the inner circle 200 and the outer ring 400; for example, the bearings may be ball bearings.
Fig. 5 is a flowchart of a method for using a crystal oscillator disk structure according to an embodiment of the present application, and referring to fig. 3 and fig. 5, a method for using any crystal oscillator disk structure described above, where the crystal oscillator disk structure can detect a vapor deposition rate specifically includes:
step S201, starting the driving assembly to expose a first crystal oscillator 701 in an initial state to the through hole 101 for detecting the evaporation rate, as shown in the graph (a) of FIG. 3;
step S202, when the life of the exposed first wafer 701' is about to be exhausted, activating the driving assembly to expose a second wafer 702 in an initial state to the through hole 101, as shown in (b) of FIG. 3;
step S203, after the life of the exposed first wafer 701 "is exhausted, the first wafer 701" with the exhausted life is removed from the position of the through hole 101 by the driving assembly, as shown in the (c) diagram in FIG. 3;
step S204, when the life of the exposed second wafer 702' is about to be exhausted, exposing one first wafer 701 in an initial state to the through hole 101 through the driving assembly, as shown in (d) of FIG. 3;
step S205, after the lifetime of the exposed second wafer 702 "is exhausted, the lifetime-exhausted second wafer 702" is removed from the through hole 101 by the driving assembly, as shown in (d) of fig. 3;
pushing in this manner until the lifetime of all of the first wafer 701 and the second wafer 702 is exhausted.
It should be noted that: the first crystal oscillator 701 is arranged on the inner circle 200, and the second crystal oscillator 702 is arranged on the outer ring 400; alternatively, the first crystal oscillator plate 701 is disposed on the outer ring 400, and the second crystal oscillator plate 702 is disposed on the inner ring 200. In the present embodiment, only the first crystal oscillator 701 is disposed on the inner circle 200, and the second crystal oscillator 702 is disposed on the outer ring 400.
Referring to fig. 4 and 5, as an alternative embodiment, when the evaporation material is magnesium or ytterbium, before detecting the evaporation rate, a pre-film process is performed on all the first crystal oscillator plate 701 and the second crystal oscillator plate 702, which specifically includes:
step S101, starting a driving assembly, exposing a first crystal oscillator 701 in a non-film-forming state and a second crystal oscillator 702 in a non-film-forming state to the through hole 101 for performing a pre-film-forming process, as shown in a graph (a) in FIG. 4;
step S102, after the first crystal oscillator 701 'and the second crystal oscillator 702' are exposed and the film formation is completed, the first crystal oscillator 701 'and the second crystal oscillator 702' after film formation are removed from the positions of the through holes 101 through the driving assembly, and then one first crystal oscillator 701 in a non-film formation state and one second crystal oscillator 702 in a non-film formation state are exposed out of the through holes 101, as shown in the (b) diagram and the (c) diagram in FIG. 4;
pushing in this manner until the prefilming of all the first wafer 701 and the second wafer 702 is completed.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. The crystal oscillator disk structure is characterized by comprising a shell, a disk body and a driving assembly; wherein,
the disc body is provided with a center point, the disc body comprises an inner circle and an outer ring sleeved on the outer side of the inner circle, and the center point is the center of the inner circle and the outer ring;
the driving assembly comprises a first driving device and a second driving device, the first driving device is used for driving the inner circle to rotate around the central point, and the second driving device is used for driving the outer circle to rotate around the central point;
the first surface of the inner circle is provided with a plurality of crystal oscillator plates around the circumference of the central point, the second surface of the inner circle is provided with a plurality of first electrodes, the first electrodes are arranged in one-to-one correspondence with the crystal oscillator plates arranged on the first surface of the inner circle, and the first electrodes are used for simulating data transmission;
the first surface of the outer ring is circumferentially provided with a plurality of crystal oscillator sheets around the center point, the second surface of the outer ring is provided with a plurality of second electrodes, the second electrodes are arranged in one-to-one correspondence with the crystal oscillator sheets arranged on the first surface of the outer ring, and the second electrodes are used for analog data transmission;
the tray body is arranged on the shell, and the shell is provided with a through hole which is used for exposing a crystal oscillator piece positioned in the inner circle and/or a crystal oscillator piece positioned in the outer ring;
the crystal vibration plates positioned in the inner circle and the crystal vibration plates positioned in the outer ring are arranged in a one-to-one correspondence manner;
when the crystal oscillator disk structure is in an initial state, in each group of crystal oscillator sheets which are mutually corresponding and are positioned in the inner circle and the outer ring: the connecting line between the crystal vibration plate positioned in the inner circle and the central point coincides with the connecting line between the crystal vibration plate positioned in the outer ring and the central point;
the method for detecting the evaporation rate by using the crystal oscillator disk structure specifically comprises the following steps:
starting the driving assembly to expose a first crystal oscillator piece in an initial state to the through hole so as to detect the evaporation rate;
when the service life of the exposed first crystal oscillator piece is about to be exhausted, starting the driving assembly to expose a second crystal oscillator piece in an initial state to the through hole;
after the service life of the exposed first crystal oscillator piece is exhausted, the first crystal oscillator piece with the exhausted service life is removed from the through hole position through the driving assembly;
exposing a first crystal oscillator piece in an initial state to the through hole through the driving assembly when the service life of the exposed second crystal oscillator piece is about to be exhausted;
after the service life of the exposed second wafer is exhausted, removing the second wafer with the exhausted service life from the through hole position through the driving assembly;
pushing in this manner until the lifetime of all the first and second wafers is exhausted, wherein:
the first crystal oscillator piece is arranged in the inner circle, and the second crystal oscillator piece is arranged in the outer ring; or, the first crystal oscillator piece is arranged on the outer ring, and the second crystal oscillator piece is arranged on the inner circle.
2. The crystal plate structure of claim 1, wherein a plurality of crystal plates located in the inner circle are disposed at uniform intervals, and a plurality of crystal plates located in the outer ring are disposed at uniform intervals.
3. The crystal plate structure of claim 2, wherein the number of crystal plates located in the inner circle and the number of crystal plates located in the outer circle are five.
4. The crystal oscillator disk structure according to claim 1, wherein the first driving device comprises a first motor, a first coupling and a first transmission shaft;
the output shaft of the first motor is connected with the first end of the first transmission shaft through the first coupling, and the second end of the first transmission shaft is fixedly connected with the center point.
5. The crystal oscillator disk structure according to claim 1, wherein the second driving device comprises a second motor, a second coupling and a second transmission shaft;
the outer ring is provided with a gear ring around the circumference of the outer ring;
the output shaft of the second motor is connected with the first end of the second transmission shaft through the second coupler, the second end of the second transmission shaft is provided with a gear, and the gear is meshed with the gear ring.
6. The crystal plate structure of any one of claims 1-5, wherein the inner circle and the outer circle are connected by bearings.
7. The crystal plate structure of claim 6, wherein the bearing is a ball bearing.
8. The crystal oscillator disk structure according to any one of claims 1 to 5, wherein when the evaporation material is magnesium or ytterbium, before detecting the evaporation rate, the prefilming treatment is performed on all the first crystal oscillator plates and the second crystal oscillator plates, specifically comprising:
starting a driving assembly, and exposing a first crystal oscillator sheet in a non-film-forming state and a second crystal oscillator sheet in a non-film-forming state to the through hole to perform pre-film-forming treatment;
after the pre-film forming of the exposed first crystal oscillator piece and the exposed second crystal oscillator piece is completed, the first crystal oscillator piece and the second crystal oscillator piece after film forming are removed from the positions of the through holes through the driving assembly, and then the first crystal oscillator piece in a non-film forming state and the second crystal oscillator piece in a non-film forming state are exposed out of the through holes;
and pushing the film until the pre-film formation of all the first crystal oscillator wafers and the second crystal oscillator wafers is completed.
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| CN110257791A (en) * | 2019-04-29 | 2019-09-20 | 昆山国显光电有限公司 | Rate monitoring device, evaporated device and evaporation coating method |
| CN110306165A (en) * | 2019-08-15 | 2019-10-08 | 昆山维信诺科技有限公司 | Film thickness monitoring device and film deposition equipment |
| CN113493901A (en) * | 2021-06-22 | 2021-10-12 | 上海天马有机发光显示技术有限公司 | Vacuum coating machine |
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| US20030147084A1 (en) * | 2002-02-01 | 2003-08-07 | Eckhard Wirth | Apparatus for devices for determining properties of applied layers |
| KR101839999B1 (en) * | 2016-09-13 | 2018-03-20 | 에스엔유 프리시젼 주식회사 | Deposition material detecting device having improved service life |
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| CN114395755A (en) | 2022-04-26 |
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