JP2007243060A - Gas-phase growth equipment - Google Patents

Gas-phase growth equipment Download PDF

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JP2007243060A
JP2007243060A JP2006066458A JP2006066458A JP2007243060A JP 2007243060 A JP2007243060 A JP 2007243060A JP 2006066458 A JP2006066458 A JP 2006066458A JP 2006066458 A JP2006066458 A JP 2006066458A JP 2007243060 A JP2007243060 A JP 2007243060A
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susceptor
substrate holding
substrate
phase growth
holding member
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Akira Yamaguchi
晃 山口
Kunimasa Uematsu
邦全 植松
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Taiyo Nippon Sanso Corp
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Taiyo Nippon Sanso Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a gas-phase growth equipment where a failure of rotation caused by the thermal distortion of a susceptor is eliminated, and the maintenance and economy is improved. <P>SOLUTION: In the gas-phase growth equipment, a plurality of substrate holding members 21 are rotatably located on a susceptor 11 which is heated by a heating means and is rotated by a driving means, through a rotating member (balls 22) in the circumferential direction of the susceptor, the substrate holding member 21 is rotated with the rotation of the susceptor, a rotation/revolution structure rotates the substrate 12 held by the substrate holding member revolving around the rotating axis of the susceptor, and guide members 23 guide the rotating member located between the susceptor and rotating member. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、気相成長装置に関し、詳しくは、サセプタ上の基板を自公転させる機構を備えた気相成長装置に関する。   The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus provided with a mechanism for rotating and revolving a substrate on a susceptor.

フローチャンネル内のサセプタに保持した基板を所定温度に加熱した状態でフローチャンネル内に気相原料を供給し、前記基板面に薄膜を堆積させる気相成長装置として、複数枚の基板に均一に薄膜を形成するため、サセプタを回転させるとともに、該サセプタの回転に伴って基板を保持した基板保持部材(基板トレイ)を回転させ、成膜中の基板を自公転させる機構を備えた気相成長装置が知られている(例えば、特許文献1参照。)。このような自公転機構では、サセプタと基板保持部材との間に転動部材(ベアリング)介在させ、基板保持部材が円滑に回転するようにしている。
特開2002−175992号公報
As a vapor phase growth apparatus for supplying a vapor phase raw material into the flow channel while the substrate held on the susceptor in the flow channel is heated to a predetermined temperature and depositing a thin film on the substrate surface, the thin film is uniformly formed on a plurality of substrates. In order to form the substrate, a vapor phase growth apparatus provided with a mechanism for rotating the susceptor and rotating the substrate holding member (substrate tray) holding the substrate along with the rotation of the susceptor to rotate the substrate during film formation. Is known (for example, see Patent Document 1). In such a self-revolving mechanism, a rolling member (bearing) is interposed between the susceptor and the substrate holding member so that the substrate holding member rotates smoothly.
JP 2002-17592 A

しかし、従来の気相成長装置における自公転機構は、前記転動部材がサセプタ及び基板保持部材にそれぞれ設けられたガイド溝等に直接保持されているため、サセプタが高温に加熱されたときの熱膨張による歪みにより、転動部材の回転に不具合を生じることがあった。例えば、転動部材が転動するガイド溝等の転動面が歪んで転動部材が転動面を円滑に転動しなくなり、基板保持部材の回転がぶれたり、転動部材が外れたり、基板保持部材の回転が重くなって歯車部等が破損したりすることがあった。また、従来の自公転機構では、基板保持部材やサセプタに回転異常が発生した場合、修理するためにサセプタ全体をチャンバーの外に出さなければならず、チャンバーの開放等、大掛かりなメンテナンスが必要となり、時間とコストがかかっていた。   However, since the rolling and revolving mechanism in the conventional vapor phase growth apparatus is directly held by the guide grooves provided in the susceptor and the substrate holding member, the heat generated when the susceptor is heated to a high temperature. In some cases, the rotation of the rolling member has a problem due to distortion caused by expansion. For example, the rolling surface such as a guide groove where the rolling member rolls is distorted and the rolling member does not roll smoothly on the rolling surface, the rotation of the substrate holding member is shaken, the rolling member comes off, The rotation of the substrate holding member may become heavy and the gear portion and the like may be damaged. In addition, in the conventional rotation mechanism, if a rotation abnormality occurs in the substrate holding member or susceptor, the entire susceptor must be taken out of the chamber for repair, requiring extensive maintenance such as opening the chamber. It took time and cost.

そこで本発明は、サセプタの熱歪みにより生じる回転不具合を解消し、メンテナンス性や経済性の向上が図れる気相成長装置を提供することを目的としている。   SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor phase growth apparatus that eliminates rotational problems caused by thermal distortion of a susceptor and can improve maintainability and economy.

上記目的を達成するため、本発明の気相成長装置は、加熱手段によって加熱されるとともに駆動手段によって回転するサセプタに、該サセプタの周方向に複数の基板保持部材を転動部材を介して回転可能に設け、前記サセプタの回転に伴って前記基板保持部材を回転させ、該基板保持部材に保持された基板をサセプタの回転軸に対して公転させながら自転させる自公転構造を備えた気相成長装置において、前記サセプタと前記転動部材との間に転動部材をガイドするガイド部材を設けたことを特徴としている。   In order to achieve the above object, the vapor phase growth apparatus of the present invention rotates a plurality of substrate holding members in a circumferential direction of the susceptor via a rolling member on a susceptor heated by a heating unit and rotated by a driving unit. Vapor phase epitaxy provided with a self-revolving structure capable of rotating while rotating the substrate holding member as the susceptor rotates and rotating the substrate held by the substrate holding member with respect to the rotation axis of the susceptor. In the apparatus, a guide member for guiding the rolling member is provided between the susceptor and the rolling member.

本発明の気相成長装置によれば、面積が大きくて熱歪みが発生しやすいサセプタに比べて面積が小さく、熱歪みも小さいガイド部材によって転動部材をガイドしているので、高温に加熱しても転動部材の転動に悪影響が出ることはなく、高温時でも基板保持部材を円滑に回転させることができる。さらに、電動部材や転動面のメンテナンスを行う際には、サセプタを取り外すことなく、基板保持部材とガイド部材とを取り外すだけでよいため、メンテナンス作業も容易にかつ短時間で行うことができる。   According to the vapor phase growth apparatus of the present invention, the rolling member is guided by the guide member having a small area and a small thermal strain as compared with a susceptor that has a large area and is likely to generate thermal strain. However, the rolling of the rolling member is not adversely affected, and the substrate holding member can be smoothly rotated even at high temperatures. Furthermore, when the maintenance of the electric member and the rolling surface is performed, it is only necessary to remove the substrate holding member and the guide member without removing the susceptor, so that the maintenance work can be performed easily and in a short time.

図1は本発明の気相成長装置の一形態例を示す断面図、図2はサセプタの平面図、図3は図1のIII−III断面図、図4はガイド部材の他の形状例を示す要部の断面図である。   1 is a sectional view showing an embodiment of the vapor phase growth apparatus of the present invention, FIG. 2 is a plan view of a susceptor, FIG. 3 is a sectional view taken along line III-III in FIG. 1, and FIG. It is sectional drawing of the principal part shown.

本形態例に示す気相成長装置は、円盤状のサセプタ11の上面に6枚の基板12を載置可能とした多数枚自公転型気相成長装置であって、サセプタ11は、石英ガラス等で形成された円筒状のフローチャンネル13の底面部分に回転可能に設けられている。サセプタ11の下面中心部には回転軸14が、該回転軸14の周囲にはサセプタ11を介して基板12を加熱するためのヒーター15や温度計16がそれぞれ設けられ、ヒーター15の下方及び周囲は、リフレクター17で覆われている。フローチャンネル13の天板中央には、気相原料導入口18が開口しており、底板外周には排気口19が設けられている。   The vapor phase growth apparatus shown in this embodiment is a multi-rotation type vapor phase growth apparatus in which six substrates 12 can be placed on the upper surface of a disk-shaped susceptor 11, and the susceptor 11 is made of quartz glass or the like. The cylindrical flow channel 13 is formed on the bottom surface of the flow channel 13 so as to be rotatable. A rotating shaft 14 is provided at the center of the lower surface of the susceptor 11, and a heater 15 and a thermometer 16 for heating the substrate 12 via the susceptor 11 are provided around the rotating shaft 14. Is covered with a reflector 17. In the center of the top plate of the flow channel 13, a vapor phase material inlet 18 is opened, and an exhaust port 19 is provided on the outer periphery of the bottom plate.

基板12は、上面に基板保持凹部20を有する円盤状の基板保持部材(基板トレイ)21に保持されており、基板保持部材21は、カーボンやセラミックで形成された転動部材である多数のボール22を介して円盤状のガイド部材23にそれぞれ支持され、ガイド部材23は、サセプタ11の周方向に等間隔で設けられたガイド部材保持凹部24内に保持されている。また、基板保持部材21の外周下部には、外歯車25が設けられており、サセプタ11の外周位置には、基板保持部材21の外歯車25に歯合する内歯車26を有するリング状の固定歯車部材27が設けられている。さらに、固定歯車部材27の上方、内歯車26及び外歯車25の上方、及び、サセプタ11の中央部上面を覆うカバー部材28が設けられており、このカバー部材28の上面、基板保持凹部20の外周部上面、基板12の上面が面一になるようにしている。基板保持部材21の下面及びガイド部材23の上面には、基板12の軸線を中心とするリング状のV溝29,30が対向して設けられており、両V溝29,30間に前記ボール22が転動可能に保持されている。   The substrate 12 is held by a disk-like substrate holding member (substrate tray) 21 having a substrate holding recess 20 on the upper surface, and the substrate holding member 21 is a large number of balls that are rolling members made of carbon or ceramic. The guide members 23 are respectively supported by disk-shaped guide members 23 via 22, and are held in guide member holding recesses 24 provided at equal intervals in the circumferential direction of the susceptor 11. Further, an external gear 25 is provided at the lower outer periphery of the substrate holding member 21, and a ring-shaped fixing having an internal gear 26 that meshes with the external gear 25 of the substrate holding member 21 at the outer peripheral position of the susceptor 11. A gear member 27 is provided. Further, a cover member 28 that covers the fixed gear member 27, the internal gear 26 and the external gear 25, and the upper surface of the central portion of the susceptor 11 is provided. The upper surface of the cover member 28 and the substrate holding recess 20 are provided. The upper surface of the outer peripheral portion and the upper surface of the substrate 12 are flush with each other. On the lower surface of the substrate holding member 21 and the upper surface of the guide member 23, ring-shaped V grooves 29 and 30 centering on the axis of the substrate 12 are provided so as to face each other. 22 is held so that it can roll.

基板12への気相成長を行う際に、回転軸14を所定速度で回転させると、回転軸14と一体にサセプタ11が回転し、このサセプタ11の回転に伴って固定歯車部材27を除く各部材が回転し、基板12は、サセプタ11の軸線を中心として回転、即ち公転する状態となる。そして、固定歯車部材27の内歯車26に外歯車25が歯合することにより、基板保持部材21は該基板保持部材21の軸線を中心として回転、即ち自転する状態となる。これにより、基板保持部材21が保持された基板12が、サセプタ11の軸線を中心として自公転することになる。   When performing the vapor phase growth on the substrate 12, if the rotating shaft 14 is rotated at a predetermined speed, the susceptor 11 rotates integrally with the rotating shaft 14, and the fixed gear member 27 is removed along with the rotation of the susceptor 11. The member rotates, and the substrate 12 is rotated around the axis of the susceptor 11, that is, revolved. Then, when the external gear 25 meshes with the internal gear 26 of the fixed gear member 27, the substrate holding member 21 is rotated around the axis of the substrate holding member 21, that is, is rotated. Thereby, the substrate 12 on which the substrate holding member 21 is held revolves around the axis of the susceptor 11.

このようにして基板12を自公転させ、かつ、ヒーター15からサセプタ11等を介して基板12を所定温度、例えば1100℃に加熱した状態で、気相原料導入口18から所定の気相原料、例えばトリメチルガリウムとアンモニアとの混合ガスをフローチャンネル13内に導入し、外周の排気口19から排出することにより、複数の基板12の表面に所定の薄膜を均一に堆積させることができる。   In this way, the substrate 12 revolves and the substrate 12 is heated from the heater 15 through the susceptor 11 and the like to a predetermined temperature, for example, 1100 ° C. For example, a predetermined thin film can be uniformly deposited on the surfaces of the plurality of substrates 12 by introducing a mixed gas of trimethylgallium and ammonia into the flow channel 13 and discharging it from the exhaust port 19 on the outer periphery.

基板12を高温に加熱する際に、直径(面積)が大きく、中央部と周辺部とで肉厚が異なるサセプタ11は、ヒーター15やランプ等によって加熱された際に温度分布が発生し、熱膨張差による歪みを生じ易いが、サセプタ11に比べて直径が小さな前記基板保持部材21及び前記ガイド部材23は、高温に加熱されても温度分布がほとんど起こらず、熱膨張差による歪みが発生し難いため、また、歪みが発生したとしても極小さな歪みであるから、両V溝29,30の関係を良好に保つことができ、ボール22の転動がスムーズに行われ、結果として基板12を円滑かつ等速度で自転させることができる。これにより、全ての基板12に均質な薄膜を安定して堆積させることができる。   When the substrate 12 is heated to a high temperature, the susceptor 11 having a large diameter (area) and a different thickness at the central portion and the peripheral portion generates a temperature distribution when heated by a heater 15 or a lamp. Although the substrate holding member 21 and the guide member 23 having a small diameter compared to the susceptor 11 tend to cause distortion due to a difference in expansion, the temperature distribution hardly occurs even when heated to a high temperature, and distortion due to a difference in thermal expansion occurs. In addition, since the distortion is extremely small even if distortion occurs, the relationship between the V-grooves 29 and 30 can be kept good, and the balls 22 can be smoothly rolled. It can rotate smoothly and at a constant speed. Thereby, a homogeneous thin film can be stably deposited on all the substrates 12.

また、メンテナンスでボール22や両V溝29,30の点検、清掃、交換等を行う際に、従来はサセプタ11を含めて全体を取り外さなければいけなかったが、本形態例では、サセプタ11を残してガイド部材23までを取り外せばよいため、これらの点検等を短時間で効率よく行うことができる。さらに、歯車部分を覆うようにしてカバー部材28を設けることにより、歯車部分への反応生成物等の侵入を防止でき、歯車部分を長期にわたって保護することができる。これにより、生産効率を大幅に向上させることができる。   In addition, when the ball 22 and the V grooves 29 and 30 are inspected, cleaned, replaced, and the like for maintenance, the entire susceptor 11 including the susceptor 11 has conventionally been removed. However, in this embodiment, the susceptor 11 is removed. Since it is only necessary to remove the guide member 23, the inspection and the like can be performed efficiently in a short time. Furthermore, by providing the cover member 28 so as to cover the gear portion, it is possible to prevent the reaction products and the like from entering the gear portion, and to protect the gear portion for a long period of time. Thereby, production efficiency can be improved significantly.

図4に示す形態例は、基板保持部材31の下部周面にV溝32を設け、基板保持部材31の下部周面よりも大きな内径を有するリング状のガイド部材33の内周面に前記V溝32に対向するV溝34を設けるとともに、両V溝32,34間に前記同様のボール35を配置し、基板保持部材31とガイド部材33とを互いに回転可能に形成し、ガイド部材33をサセプタ36の外周部に設けた円形の基板保持部材保持孔37の下部内周にリング状に設けた支持片38に支持させている。   In the embodiment shown in FIG. 4, a V-groove 32 is provided on the lower peripheral surface of the substrate holding member 31, and the V-shaped guide member 33 having an inner diameter larger than the lower peripheral surface of the substrate holding member 31 is formed on the inner peripheral surface of the ring-shaped guide member 33. A V-groove 34 facing the groove 32 is provided, the same ball 35 is disposed between the V-grooves 32, 34, and the substrate holding member 31 and the guide member 33 are formed to be rotatable with respect to each other. A circular substrate holding member holding hole 37 provided on the outer periphery of the susceptor 36 is supported by a support piece 38 provided in a ring shape on the lower inner periphery.

このように形成しても、サセプタ36に比べてガイド部材33が極めて小さいので、温度分布による熱膨張差で歪みが発生することを抑制でき、基板12を円滑に回転させることができるとともに、サセプタ36からの取り外しも容易であるから、メンテナンス性の向上も図れる。   Even if it forms in this way, since the guide member 33 is very small compared with the susceptor 36, it can suppress that distortion generate | occur | produces by the thermal expansion difference by temperature distribution, and while the board | substrate 12 can be rotated smoothly, a susceptor Since removal from 36 is easy, maintenance can be improved.

なお、本発明は、基板の薄膜形成面を下向きにした気相成長装置にも適用できる。また、各部の形状は、サセプタや基板の大きさなどの各種条件に応じて適宜設定することができ、例えば、転動部材の形状はボールに限らず、転動部材の保持もV溝に限るものではない。   The present invention can also be applied to a vapor phase growth apparatus in which the thin film forming surface of the substrate faces downward. In addition, the shape of each part can be appropriately set according to various conditions such as the size of the susceptor and the substrate. For example, the shape of the rolling member is not limited to the ball, and the holding of the rolling member is also limited to the V groove. It is not a thing.

本発明の気相成長装置の一形態例を示す断面図である。It is sectional drawing which shows one example of the vapor phase growth apparatus of this invention. サセプタの平面図である。It is a top view of a susceptor. 図1のIII−III断面図である。FIG. 3 is a sectional view taken along line III-III in FIG. 1. ガイド部材の他の形状例を示す要部の断面図である。It is sectional drawing of the principal part which shows the other example of a shape of a guide member.

符号の説明Explanation of symbols

11…サセプタ、12…基板、13…フローチャンネル、14…回転軸、15…ヒーター、16…温度計、17…リフレクター、18…気相原料導入口、19…排気口、20…基板保持凹部、21…基板保持部材、22…ボール、23…ガイド部材、24…ガイド部材保持凹部、25…外歯車、26…内歯車、27…固定歯車部材、28…カバー部材、29,30…V溝、31…基板保持部材、32…V溝、33…ガイド部材、34…V溝、35…ボール、36…サセプタ、37…基板保持部材保持孔、38…支持片   DESCRIPTION OF SYMBOLS 11 ... Susceptor, 12 ... Board | substrate, 13 ... Flow channel, 14 ... Rotating shaft, 15 ... Heater, 16 ... Thermometer, 17 ... Reflector, 18 ... Gas-phase raw material introduction port, 19 ... Exhaust port, 20 ... Substrate holding recessed part, 21 ... Substrate holding member, 22 ... Ball, 23 ... Guide member, 24 ... Guide member holding recess, 25 ... External gear, 26 ... Internal gear, 27 ... Fixed gear member, 28 ... Cover member, 29, 30 ... V-groove, 31 ... Substrate holding member, 32 ... V groove, 33 ... Guide member, 34 ... V groove, 35 ... Ball, 36 ... Susceptor, 37 ... Substrate holding member holding hole, 38 ... Supporting piece

Claims (1)

加熱手段によって加熱されるとともに駆動手段によって回転するサセプタに、該サセプタの周方向に複数の基板保持部材を転動部材を介して回転可能に設け、前記サセプタの回転に伴って前記基板保持部材を回転させ、該基板保持部材に保持された基板をサセプタの回転軸に対して公転させながら自転させる自公転構造を備えた気相成長装置において、前記サセプタと前記転動部材との間に転動部材をガイドするガイド部材を設けたことを特徴とする気相成長装置。   A plurality of substrate holding members are rotatably provided in a circumferential direction of the susceptor via a rolling member on a susceptor that is heated by a heating unit and rotated by a driving unit, and the substrate holding member is provided along with the rotation of the susceptor. In a vapor phase growth apparatus having a self-revolving structure that rotates and revolves while revolving the substrate held by the substrate holding member with respect to the rotation axis of the susceptor, rolling between the susceptor and the rolling member. A vapor phase growth apparatus comprising a guide member for guiding a member.
JP2006066458A 2006-03-10 2006-03-10 Gas-phase growth equipment Pending JP2007243060A (en)

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