JP2013004730A - Vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth device comprising a substrate holder for holding a substrate, and a susceptor which holds the substrate holder rotatably and has a gear for receiving a rotation driving force transmitted externally on the outer periphery, in which the susceptor is not required to be replaced entirely even if the gear, or the like, is damaged and damage on the susceptor due to thermal stress caused by uneven temperature can be minimized.SOLUTION: The vapor growth device is configured so that the gear of a susceptor can be separated freely from a susceptor body, and preferably configured of a susceptor body consisting of a disk-like member and a ring-like member provided on the outside thereof and the gear, or configured so that the gear consists of a plurality of arcuate members.

Description

  The present invention relates to a vapor phase growth apparatus having a susceptor having a gear portion that rotatably holds a substrate holder and receives an external rotational driving force on the outer periphery, and in particular, replaces only the gear portion with a new one. The present invention also relates to a vapor phase growth apparatus that can suppress susceptor breakage due to thermal stress caused by temperature unevenness.

As a method for growing a crystal film on a substrate, there is a method such as a chemical vapor deposition (CVD) method, and as a CVD method involving substrate heating, a thermal CVD method or the like is known. In recent years, there has been an increase in the vapor phase growth process performed by heating the substrate under a high temperature condition (for example, 1000 ° C. or higher), and the vapor phase of a group III nitride semiconductor for producing a blue or ultraviolet LED or a blue or ultraviolet laser diode. The growth process is one of them. For example, the growth of a group III nitride semiconductor crystal film was heated to a high temperature of 1000 ° C. or higher using an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum as a group III metal source and ammonia as a nitrogen source. The thermal CVD method is sometimes performed by vapor-phase-growing a crystal film on a substrate such as silicon (Si), sapphire (Al ₂ O ₃ ), or gallium nitride (GaN).

As the vapor phase growth apparatus, there are an apparatus in which the crystal growth surface of the substrate is arranged upward (face-up type) and an apparatus in which the crystal growth surface of the substrate is arranged downward (face-down type). In addition, there is a vapor phase growth apparatus that grows a crystal film on one substrate per batch, but there is also a vapor phase growth apparatus that grows a crystal film on multiple substrates per batch in order to improve productivity. Are known.
As a configuration of the vapor phase growth apparatus, as shown in Patent Documents 1 to 4, a substrate is held, or a substrate holder that holds the substrate is rotatably held, and a rotation driving force is transmitted from the outside to the outer periphery. There exists a structure provided with the susceptor which has a gear part.

  In such a vapor phase growth apparatus, in order to obtain a uniform film thickness and film quality, it is effective to grow a crystal film on the substrate while rotating the susceptor. The susceptor may be rotated by a rotational driving force transmitted to a gear portion provided on the outer periphery of the susceptor while the susceptor is rotatably held. In addition, when growing crystal films on a plurality of substrates per batch, the substrate is revolved by rotating the susceptor, and the substrate is rotated by rotating the substrate holder. A uniform film thickness and film quality can also be obtained.

JP 2002-17592 A JP 2007-96280 A JP 2010-219225 A JP 2010-232624 A

In the above-mentioned vapor phase growth apparatus, the members used in the reaction furnace of the vapor phase growth apparatus often advance the progress of corrosion and deterioration by contacting the reactive source gas at a high temperature. In addition, the gear portion that receives the transmission of the rotational driving force that rotates the susceptor is easily affected by wear and stress, and thus is particularly likely to be damaged.
In addition, the outer peripheral portion of the susceptor provided with the gear portion is often located near the boundary between the heated region and the non-heated region by the heater that heats the substrate. Cracks are likely to occur. Therefore, in the susceptor that has been used in the past with the gear part integrated with the susceptor body, if the gear part is damaged, the entire susceptor must be replaced even if the damage is only a part. There was a problem of not becoming.

Furthermore, in the above-mentioned vapor phase growth apparatus, in addition to the temperature unevenness in the radial direction, there is often a difference in the degree of heat transfer and heat dissipation between the upper and lower surfaces of the susceptor, which is caused by the thermal stress caused by the temperature unevenness in the thickness direction. It was found that the susceptor is likely to be deformed or cracked.
That is, the problem to be solved by the present invention is that, in the vapor phase growth apparatus as described above, even if the gear portion or the like is damaged, it is not necessary to replace the entire susceptor, and the heat caused by temperature unevenness It is an object of the present invention to provide a vapor phase growth apparatus capable of suppressing damage to a susceptor due to stress.

  As a result of diligent investigations to solve these problems, the inventors have determined that the structure of the susceptor of the vapor phase growth apparatus as described above can be freely separated from the susceptor body, preferably a disk shape. It has been found that the above-described problems can be solved by configuring the member and a susceptor body and a gear portion made of a ring-shaped member provided on the outer side thereof, or a structure in which the gear portion is made of a plurality of arc-shaped members. Reached.

  That is, the present invention is a vapor phase growth apparatus provided with a susceptor having a substrate holder for holding a substrate, and a gear portion that rotatably holds the substrate holder and receives a rotational driving force from the outside. The vapor phase growth apparatus is characterized in that the gear portion of the susceptor is configured to be separable from the susceptor body.

In the vapor phase growth apparatus of the present invention, since the gear part of the susceptor can be easily separated from the susceptor body, it is not necessary to replace the entire susceptor even if the gear part or the like is damaged. In addition, the material of the gear part can easily be made of a material with lower thermal conductivity than the susceptor body, so the temperature uniformity of the susceptor body is improved and damage to the susceptor due to thermal stress due to temperature unevenness is suppressed. it can.
Furthermore, in the vapor phase growth apparatus according to the present invention, the susceptor is configured by a susceptor body and a gear portion including a disk-shaped member and a ring-shaped member provided outside thereof, or the gear portion is formed of a plurality of arc-shaped members. By adopting such a configuration, it is possible to more efficiently obtain an effect of exchanging only the gear part and an effect of suppressing breakage of the susceptor.

  The present invention is applied to a vapor phase growth apparatus provided with a substrate holder that holds a substrate, and a susceptor having a gear portion that rotatably holds the substrate holder and receives a rotational driving force from the outside. . Hereinafter, although the vapor phase growth apparatus of this invention is demonstrated in detail based on FIGS. 1-5, this invention is not limited by these. 1 is a vertical sectional view showing an example of the vapor phase growth apparatus of the present invention, and FIG. 2 is a partially enlarged view (part A) of the vapor phase growth apparatus shown in FIG. FIG. 4 is a horizontal sectional configuration diagram (cross section BB) of the vapor phase growth apparatus shown in FIG. 1, and FIG. 4 is a horizontal sectional configuration diagram (cross section CC) of the vapor phase growth apparatus shown in FIG. FIG. 5 is a horizontal sectional view showing an example of a susceptor used in the vapor phase growth apparatus of the present invention, and FIG. 6 is a perspective view showing an example of a ring-shaped member and a gear portion of the susceptor.

As shown in FIG. 1, the vapor phase growth apparatus of the present invention includes a substrate holder 2 that holds a substrate 1 and a gear portion that rotatably holds the substrate holder 2 and receives an external rotational driving force on its outer periphery. As shown in FIG. 4, the vapor phase growth apparatus is provided with a configuration in which the gear portion 22 of the susceptor can be separated from the susceptor body (21, 23). .
In the vapor phase growth apparatus of the present invention, as shown in FIG. 4, the structure of the susceptor is composed of a susceptor body composed of a disk-shaped member 21 and a ring-shaped member 23 provided outside thereof, and a gear portion 22, or It is preferable that the gear portion is composed of a plurality of (four in FIG. 4) arcuate members.

  In the present invention, the structure in which the gear portion of the susceptor can be separated from the susceptor main body means a state in which the gear portion of the susceptor can be easily detached from the susceptor main body by a commonly used jig. The structure which is couple | bonded by a helix, a volt | bolt and a nut, a pin, and fitting is shown. In this invention, it can be set as the structure which can each isolate | separate a disk-shaped member, a ring-shaped member, and a gear part. Moreover, a disk-shaped member is made into a susceptor main body, and as shown in FIG. It can also be set as the structure which makes it the gear part 22 and isolate | separates this from a susceptor main body. Furthermore, it can also be set as the structure which does not use a ring-shaped member. In addition, the disk-shaped member of the susceptor according to the present invention can have a hole for inserting the substrate holder or a hole at the center.

Hereinafter, details of the vapor phase growth apparatus of the present invention will be described.
In the vapor phase growth apparatus of FIG. 1, the substrate 1 is held by a substrate holder 2 with the growth surface facing downward. The substrate holder 2 can hold one substrate having a diameter of 2 inches, 3 inches, 4 inches, or 6 inches, but is not particularly limited to a substrate of these sizes. Here, in order to uniformly transfer the heat from the heater 5 to the substrate 1, a soaking plate 16 may be provided. The susceptor 3 forms a reaction furnace 6 together with the facing 4 of the susceptor, and the reaction furnace 6 is housed in a reaction vessel 19 and sealed. The susceptor 3 can preferably hold 6 to 15 substrate holders 2, but is not particularly limited. In the reaction furnace 6, the gap between the susceptor 3 and the facing surface 4 of the susceptor is preferably 8 mm or less, more preferably 5 mm or less, but the gap is not particularly limited to these sizes.

  The susceptor 3 is composed of a susceptor body composed of a disk-shaped member 21 and a ring-shaped member 23, and a gear portion 22, and all the substrate holders 2 are held by the disk-shaped member 21 so as to be freely rotatable. . As shown in FIG. 2, the susceptor body is formed by overlapping the lower surface of the protruding portion provided on the upper outer periphery of the disk-shaped member 21 and the upper surface of the protruding portion provided on the lower inner peripheral portion of the ring-shaped member 23. 21 is fitted to the ring-shaped member 23. The susceptor 3 fits the susceptor body to the gear portion 22 by overlapping the upper surface of the protruding portion provided on the lower outer periphery of the ring-shaped member 23 and the lower surface of the protruding portion provided on the inner peripheral upper portion of the gear portion 22. It is formed. The susceptor 3 is rotatably held by the base 20 via a bearing 17 sandwiched by bearing grooves 18 carved in the lower surface of the ring-shaped member 23 and the upper surface of the base 20.

  The disk-shaped member 21 is preferably a disk having a diameter of 300 to 1000 mm (excluding protruding portions) and a thickness of 5 to 30 mm, but is not particularly limited. The radius of the inner circumferential circle of the ring-shaped member 23 is preferably 5 to 30 mm (excluding protrusions) larger than the radius of the disk-shaped member 21, and the radial width of the ring of the ring-shaped member 23 is 10 to 50 mm ( It is preferable that the thickness be equal to that of the disk-shaped member 21. The radius of the inner circumferential circle of the gear portion 22 is preferably 5 to 40 mm (excluding the protruding portion) larger than the radius of the outer circumferential circle of the ring-shaped member 23, and the radial width of the ring of the gear portion 22 is 10 to 50 mm. It is preferable that the thickness is the same as that of the ring-shaped member 23.

  Each of the protrusions preferably protrudes 5 to 30 mm in the radial direction at an arbitrary position and is preferably 2 to 15 mm in thickness, but is not limited to this size and thickness. When the susceptor body is fitted to the gear portion 22, it is more preferable that a radial gap is formed between the ring-shaped member 23 and the gear portion 22, and the size of the gap is equal in any place. Although 1-10 mm is more preferable, it is not limited to this size. The ring-shaped member 23 and the gear portion 22 may be fixed by the spiral 26 so that they are not detached from each other during vapor phase growth, but the spiral is not damaged by thermal stress caused by temperature unevenness. It is preferable to take measures such as providing a gap between the spiral and the spiral hole. The bearing 17 is preferably spherical with a diameter of 3 to 10 mm. The cross section in the vertical direction of the bearing groove 18 is preferably a semicircle, a triangle, or a quadrangle, but is not particularly limited.

  Moreover, it is preferable that the gear part 22 is comprised from the some circular-arc-shaped member 24 dividedly formed in the radial direction of a susceptor. The arcuate member 24 is formed by dividing the gear portion 22 in the radial direction. The arcuate member 24 is preferably formed by dividing the gear portion 22 at intervals of 30 °, 45 °, 60 °, 72 °, 90 °, 120 °, or 180 °. It is not limited to. Each arcuate member 24 is preferably formed with a gear portion 22 such that the upper and lower surfaces thereof are flush with each other. It is preferable to provide a gap between the arcuate members 24, and the size of the gap is preferably 1 to 10 mm evenly at an arbitrary place, but is not limited to this size.

  The rotational driving force from the susceptor rotational drive unit 13 is transmitted to the susceptor rotational drive shaft 14 that is rotatably sealed with respect to the reaction vessel 19 using a magnetic fluid seal. The susceptor rotation plate 15 is fixed to the susceptor rotation end of the susceptor rotation drive shaft 14, and the gear portion provided on the outer periphery of the susceptor rotation plate 15 and the gear portion 22 of the susceptor 3 are engaged with each other, so that the rotation driving force is transmitted to the susceptor 3. Is done. Thereby, the susceptor 3 rotates and the substrate holder 2 arranged on the susceptor 3 revolves. It is preferable to always revolve the substrate holder 2 during the vapor phase growth reaction. The susceptor rotation drive shaft 14 is preferably cylindrical with a diameter of 10 to 50 mm, but is not particularly limited. The susceptor rotating plate 15 preferably has a disk shape with a diameter of 50 to 200 mm and a thickness of 3 to 20 mm, but is not particularly limited. The gear portion of the susceptor rotating plate 15 and the gear portion 22 of the susceptor 3 preferably have a spur gear structure, but are not particularly limited.

  The substrate 1 may be rotated by rotation in addition to revolution. The substrate holder 2 is rotatably held on the disk-shaped member 21 via a bearing 17 sandwiched by bearing grooves 18 carved on the lower surface of the substrate holder 2 and the upper surface of the disk-shaped member 21. The rotational driving force from the substrate holder rotation driver 9 is first transmitted to a substrate holder rotation driving shaft 10 that is rotatably sealed with respect to the reaction vessel 19 using a magnetic fluid seal. A plurality of claws 11 are provided at the tip of the substrate holder rotation drive shaft 10 on the substrate holder rotation plate side, and the claws 11 are inserted into the insertion ports 25 provided on the upper surface of the substrate holder rotation plate 12. , And the rotational driving force is transmitted to the substrate holder rotating plate 12.

  The substrate holder rotating plate 12 is rotatably held by the disk-shaped member 21 via a bearing 17 sandwiched by bearing grooves 18 carved on the lower surface of the substrate holder rotating plate 12 and the upper surface of the disk-shaped member 21. . The substrate holder 2 is provided around the source gas introduction portion 7, and the gear portion provided on the outer periphery of the substrate holder rotating plate 12 and the gear portion provided on the outer periphery of each substrate holder 2 are engaged with each other. A rotational driving force is transmitted to the substrate holder 2, and each substrate holder 2 rotates (rotates). The substrate holder rotating plate 12 is preferably a disc having a diameter of 100 to 500 mm and a thickness of 3 to 20 mm, but is not particularly limited. The substrate holder rotation drive shaft 10 is preferably a cylindrical shape having a diameter of 10 to 50 mm, but is not particularly limited. The gear portion of the substrate holder rotating plate 12 and the gear portion of the substrate holder 2 preferably have a spur gear structure, but are not particularly limited.

  A source gas introduction unit 7 is provided at the center of the reaction furnace 6, and the source gas is blown out radially from the source gas introduction unit 7 and supplied horizontally to the growth surface of the substrate 1. The vapor phase growth reaction is performed by supplying the source gas from the source gas introduction unit 7 while heating the substrate 1 with the heater 5 in the reaction furnace 6, and a crystal film is formed on the growth surface of the substrate 1. . The raw material gas used for the vapor phase growth reaction is directly discharged from the reaction gas discharge unit 8 as a reaction gas. During the vapor phase growth reaction, the substrate holder 2 is preferably constantly revolved by the rotation of the susceptor 3, and more preferably is always rotated and revolved by the rotation of the susceptor 3 and the substrate holder 2. The rotation direction and rotation speed of the susceptor 3 and the substrate holder 2 can be arbitrarily set by changing the rotation direction and rotation speed of the susceptor rotation driver 13 and the substrate holder rotation driver 9, respectively. In order to obtain a uniform film thickness and film quality between the substrates, it is preferable to arrange the substrate holders 2 on the same circumference with respect to the center of the reaction furnace so that the distances from the raw material gas introduction portions are equal. However, it is not particularly limited.

  The substrate holder 2, the substrate holder rotating plate 12, the susceptor rotating plate 15, the disk-shaped member 21, the gear portion 22, and the ring-shaped member 23 are preferably carbon materials or carbon materials coated with a ceramic material, It is not limited. However, the gear part and the ring-shaped member are preferably made of a material having lower thermal conductivity than the susceptor body. By selecting such a material, it is possible to prevent heat from diffusing from the susceptor body, improve the temperature uniformity of the susceptor body, and suppress damage to the susceptor due to thermal stress caused by temperature unevenness. .

The substrate holder rotation drive shaft 10, claw 11 and susceptor rotation drive shaft 14 are preferably a metal, an alloy, a metal oxide, a carbon-based material, a ceramic-based material, a carbon-based material coated with a ceramic material, or a combination thereof. However, it is not particularly limited. The bearing 17 is preferably made of a ceramic material, but is not particularly limited. Here, examples of the alloy include stainless steel and inconel, but are not particularly limited. Examples of the carbon-based material include, but are not particularly limited to, carbon, pyrolytic graphite (PG), and glassy carbon (GC). Examples of the ceramic material include alumina, silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), boron nitride (BN), and the like, but are not particularly limited.

In particular, the substrate holder 2, the substrate holder rotating plate 12, the susceptor rotating plate 15, the disk-shaped member 21, the gear portion 22 and the ring-shaped member 23 are preferably SiC-coated carbon, and the bearing 17 is preferably alumina. The portion 22 and the ring-shaped member 23 are preferably made of a material having low thermal conductivity, such as alumina, silicon nitride (Si ₃ N ₄ ), boron nitride (BN), or the like, but are not particularly limited. The substrate holder rotation drive shaft 10 is preferably made of Inconel on the substrate holder rotation drive side portion, SiC substrate carbon on the substrate holder rotation plate side portion, and integrated by fixing them with a spiral or the like. 11 is made of SiC-coated carbon, and is preferably integrally formed in advance on the end surface of the substrate holder rotating plate side portion of the substrate holder rotating drive shaft. The susceptor rotation drive shaft 14 is preferably made of stainless steel.
1 to 6 show an example of the vapor phase growth apparatus of the present invention (face-down type), the present invention can also be applied to a face-up type vapor phase growth apparatus.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by these.

[Example 1]
(Production of vapor phase growth equipment)

A vapor phase growth apparatus as shown in FIGS. 1 to 4 was manufactured. A disk-shaped member 21 includes eight substrate holders 2 (made of SiC-coated carbon) capable of holding one sapphire substrate having a diameter of 3 inches and a substrate holder rotating plate 12 (made of SiC-coated carbon, diameter 200 mm, thickness 15 mm). (SiC-coated carbon, 600 mm in diameter (excluding protrusions), 20 mm in thickness, and can hold 8 substrates with a thickness of 3 inches) is held via the bearing 17, and the substrate holder 2 and the substrate holder rotating plate 12 are flat. The gear part was engaged. The thermal conductivity of the disk-shaped member was 120 Wm ⁻¹ K ⁻¹ .

On the upper part of the outer periphery of the disk-shaped member 21, a protruding portion having a thickness of 15 mm and a thickness of 10 mm was provided evenly at an arbitrary position. The ring-shaped member 23 is made of Si ₃ N ₄ (thermal conductivity: 30 Wm ⁻¹ K ⁻¹ ), and has an inner circle diameter of 615 mm (excluding protrusions) and an outer circle diameter of 635 mm (excluding protrusions). ), A ring with a thickness of 20 mm. On the inner peripheral lower portion and the outer peripheral lower portion of the ring-shaped member 23, protrusions having a radial direction of 15 mm and a thickness of 10 mm were provided evenly at arbitrary locations. The disc-shaped member 21 is fitted to the ring-shaped member 23 by overlapping the lower surface of the projecting portion provided on the outer peripheral upper portion of the disc-shaped member 21 and the upper surface of the projecting portion provided on the inner peripheral lower portion of the ring-shaped member 23. A susceptor body was formed.

The gear portion 22 is made of Si ₃ N ₄ (thermal conductivity: 28 Wm ⁻¹ K ⁻¹ ), and the inner circle has a diameter of 655 mm (excluding the protrusion), the outer circle has a diameter of 675 mm (excluding the protrusion), The ring was 20 mm thick. At the upper part of the inner periphery of the gear portion 22, a protruding portion having a diameter of 15 mm and a thickness of 10 mm was provided evenly at an arbitrary position. The gear portion 22 is composed of four arcuate members 24 that are divided and formed in the radial direction at intervals of 90 °. Each split surface was cut by 2.5 mm so that a gap of 5 mm was generated between the adjacent arc-shaped members 24 when the gear portion 22 was formed. In each arc-shaped member 24, three spiral holes with a diameter of 8 mm are provided at intervals of 30 °, a male spiral made of carbon with a diameter of 5 mm is passed through the spiral hole, and then the female spiral provided in the ring-shaped member 23 is provided. Each of the arc-shaped members 24 is fixed to the ring-shaped member 23 to form the gear portion 22. Thus, the susceptor 3 was formed by superimposing the upper surface of the protruding portion provided on the lower outer periphery of the ring-shaped member 23 and the lower surface of the protruding portion provided on the inner peripheral upper portion of the gear portion 22. At this time, a gap of 5 mm is formed in the radial direction evenly at an arbitrary position between the ring-shaped member 23 and the gear portion 22, and a gap of 5 mm is evenly formed at an arbitrary position between the adjacent arc-shaped members 24. Formed.

  The susceptor rotation drive shaft 14 is made of stainless steel having a diameter of 20 mm and a length of 300 mm, the susceptor rotation plate 15 is made of SiC coated carbon having a diameter of 100 mm and a thickness of 20 mm, and the susceptor of the susceptor rotation drive shaft 14 is made of carbon. Fixed to the side tip. The facing surface 4 of the susceptor and the base 20 were made of carbon, and the reaction vessel 19 was made of stainless steel.

(Temperature unevenness measurement experiment)
Assuming that gallium nitride (GaN) is grown on the surface of the substrate using such a vapor phase growth apparatus, the temperature of the substrate was raised to 1050 ° C., and the temperature unevenness of the susceptor was measured. First, a substrate (3-inch diameter, sapphire) substrate was set in the substrate holder, the substrate holder rotation driver and the susceptor rotation driver were operated, and rotation (10 rpm) and revolution (1 rpm) of the substrate were started. Next, as a result of measuring the difference between the maximum temperature and the minimum temperature of the susceptor (disc-shaped member) after a sufficient time had elapsed, the temperature of the substrate was raised to 1050 ° C. while flowing nitrogen from the source gas introduction part, The temperature difference was 4 ° C.

[Comparative Example 1]
(Production of vapor phase growth equipment)
A vapor phase growth apparatus similar to that of Example 1 was manufactured except that a susceptor (made of SiC coated carbon) having a disc shape with a diameter of 675 mm and provided with a spur gear structure on the outer periphery was integrally manufactured. did. The thermal conductivity of this susceptor was 120 Wm ⁻¹ K ⁻¹ like the disk-shaped member of Example 1.

(Temperature unevenness measurement experiment)
Using such a vapor phase growth apparatus, a temperature unevenness measurement experiment similar to that in Example 1 was performed. As a result, the difference between the maximum temperature and the minimum temperature was 9 ° C.
As described above, the vapor phase growth apparatus according to the present invention does not require replacement of the entire susceptor even if the gear portion or the like is damaged, and the material of the gear portion is easily made of a material having lower thermal conductivity than the susceptor body. Therefore, the temperature uniformity of the susceptor body is improved, and damage to the susceptor due to thermal stress caused by temperature unevenness can be suppressed.

  The present invention is suitable as a vapor phase growth apparatus for a thermal CVD method or the like, for example, as a vapor phase growth apparatus of a group III nitride semiconductor used for manufacturing a blue or ultraviolet light emitting diode or laser diode. is there.

Vertical sectional configuration diagram showing an example of a vapor phase growth apparatus of the present invention Partial enlarged view (part A) of the vapor phase growth apparatus shown in FIG. Horizontal sectional configuration diagram (cross section BB) of the vapor phase growth apparatus shown in FIG. Horizontal sectional configuration diagram (cross-section CC) of the vapor phase growth apparatus shown in FIG. Horizontal cross-section block diagram which shows an example of the susceptor used in the vapor phase growth apparatus of this invention The perspective view which shows an example of a ring-shaped member and a gear part

DESCRIPTION OF SYMBOLS 1 Substrate 2 Substrate holder 3 Susceptor 4 Face of susceptor 5 Heater 6 Reaction furnace 7 Raw material gas introduction part 8 Reaction gas discharge part 9 Substrate holder rotation drive 10 Substrate holder rotation drive shaft 11 Claw 12 Substrate holder rotation plate 13 Susceptor rotation drive Reference Signs List 14 susceptor rotation drive shaft 15 susceptor rotation plate 16 heat equalizing plate 17 bearing 18 bearing groove 19 reaction vessel 20 base 21 disc-shaped member 22 gear portion 23 ring-shaped member 24 arc-shaped member 25 insertion port 26 spiral

Claims (8)

  A vapor phase growth apparatus comprising a substrate holder for holding a substrate, and a susceptor having a gear portion that rotatably holds the substrate holder and receives a rotational driving force from the outside, the gear portion of the susceptor Is provided with a structure that can be separated from the susceptor body.   The vapor phase growth apparatus according to claim 1, wherein the susceptor comprises a susceptor body comprising a disk-shaped member and a ring-shaped member provided outside thereof, and a gear portion.   The vapor phase growth apparatus according to claim 1, wherein the gear portion includes a plurality of arc-shaped members.   The vapor phase growth apparatus according to claim 2, wherein the ring-shaped member and the gear portion are coupled by a spiral.   The vapor phase growth apparatus according to claim 2, wherein the disk-shaped member and the ring-shaped member are coupled by a spiral.   The vapor phase growth apparatus according to claim 2, wherein the gear portion is made of a material having lower thermal conductivity than the susceptor body.   The vapor phase growth apparatus according to claim 2, wherein the ring-shaped member is made of a material having lower thermal conductivity than the susceptor body.   The vapor phase growth apparatus according to claim 3, wherein a gap is provided between the plurality of arcuate members.

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