JP2014207357A - Susceptor and vapor phase growth device employing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a susceptor which can be prevented from being cracked by rapid heating and mechanical strength reduction caused by enlargement, and a vapor phase growth device employing the same.SOLUTION: The susceptor comprises a hole in a center part and a hole for housing a substrate holder in a peripheral part. The susceptor is formed by providing, between the hole in the center part and an outer edge, a slit for preventing contact with the hole for housing the substrate holder. A vapor phase growth device comprises: the susceptor for housing the substrate holder; a heater disposed on a surface opposing the susceptor for heating a substrate; a reactor formed from a gap between the susceptor and the counter surface of the susceptor; a raw material gas introduction part for supplying raw material gas to the reactor; and a reaction gas exhaustion part. The vapor phase growth device employs the susceptor.

Description

  The present invention relates to a susceptor capable of preventing susceptor cracking due to rapid heating and susceptor cracking due to a decrease in mechanical strength due to an increase in size, and a vapor phase growth apparatus using the susceptor.

  Organometallic compound vapor phase epitaxy (MOCVD) is often used for crystal growth of nitride semiconductors along with molecular beam epitaxy (MBE). In particular, the MOCVD method has a higher crystal growth rate than the MBE method and does not require a high-vacuum apparatus or the like unlike the MBE method. Therefore, the MOCVD method is widely used in compound semiconductor mass production apparatuses in the industry. In recent years, with the widespread use of blue or ultraviolet LEDs and blue or ultraviolet laser diodes, in order to improve the mass productivity of gallium nitride, indium gallium nitride, and aluminum gallium nitride, the diameter of the substrate subject to MOCVD is increased and many Many studies have been conducted.

  As such a vapor phase growth apparatus, for example, as shown in Patent Documents 1 to 5, a susceptor holding a substrate (substrate holder), a susceptor facing, a heater for heating the substrate, a gap between the susceptor and the susceptor facing each other And a vapor phase growth apparatus having a raw material gas introduction part for supplying a raw material gas from the central part to the peripheral part of the reaction furnace and a reactive gas discharge part. In these vapor phase growth apparatuses, a plurality of substrate holders are provided on the susceptor, and the susceptor is rotated by a driving unit such as a motor and a rotation transmitting unit, and the substrate holder is rotated and revolved. Yes.

  When performing vapor phase growth using such a vapor phase growth apparatus, the susceptor is subjected to a rotational driving force as well as heating necessary for vapor phase growth. Including generation, breakage, etc. The same shall apply hereinafter). As such crack preventing means, for example, as shown in Patent Document 6, a concave shaped counterbore is formed, and a wafer mounting surface is set to a preferable surface roughness. Examples include a susceptor in which the shape of the counterbore is set to a preferable shape.

JP 2002-17592 A JP 2007-96280 A JP 2007-243060 A JP 2009-99770 A Japanese Patent Application No. 2011-91388 JP 2008-187020 A JP 2011-144091 A

  However, in the vapor phase growth of group III nitride semiconductors, the vapor phase growth temperature is high and rapid heating is required, and the susceptor is increased in size by increasing the size of the substrate and the simultaneous growth of a large number of substrates. It has become necessary to take measures to prevent cracking of the susceptor. Accordingly, the problem to be solved by the present invention is that a susceptor that can prevent cracking of the susceptor due to rapid heating and a crack of the susceptor due to a decrease in mechanical strength due to an increase in size and a gas using the susceptor. It is to provide a phase growth apparatus.

  As a result of intensive studies to solve these problems, the inventors of the present invention do not make contact with the hole for housing the substrate holder between the hole at the center and the outer peripheral end in the vapor phase growth as described above. It is found that if the slit is provided, stress applied to the susceptor is relieved and cracking of the susceptor due to rapid heating, and cracking of the susceptor due to a decrease in mechanical strength due to an increase in size can be prevented. It reached the vapor phase growth equipment using it.

That is, the present invention is a susceptor having a hole in the center and a hole for storing the substrate holder in the periphery, and is in contact with the hole for storing the substrate holder between the hole in the center and the outer peripheral end. The susceptor is characterized in that a slit is provided so as not to occur.
The present invention also provides a susceptor for housing a substrate holder, a surface facing the susceptor, a heater for heating the substrate, a reaction furnace comprising a gap between the surface facing the susceptor and the susceptor, and supplying a source gas to the reaction furnace A vapor phase growth apparatus having a source gas introduction unit and a reaction gas discharge unit, wherein the susceptor has a hole in the central part and a hole for housing the substrate holder in the peripheral part, and the hole in the central part A vapor phase growth apparatus characterized in that a slit is provided between the outer peripheral edge and the outer peripheral end so as not to contact a hole for accommodating the substrate holder.

  In the susceptor of the present invention, since a slit is provided in advance between the hole in the central portion and the outer peripheral end, even if the susceptor is heated rapidly or the susceptor is enlarged, cracking of the susceptor due to these is prevented. Can do. As a result, in the vapor phase growth apparatus using the susceptor of the present invention, the vapor phase growth is not interrupted or stopped due to the occurrence of cracking of the susceptor, and the surface of the substrate is efficiently removed without frequently changing the susceptor. Phase growth can be performed.

  The present invention is applied to a susceptor for storing (holding) a substrate holder. Further, a susceptor, a facing of the susceptor, a heater for heating the substrate, a reaction furnace comprising a gap between the facing surface of the susceptor and the susceptor, a raw material gas introduction section for supplying a raw material gas to the reaction furnace, and a reactive gas discharge section It is applied to a vapor phase growth apparatus having As an example of the vapor phase growth apparatus in the present invention, a vapor phase growth apparatus for crystal growth of a nitride semiconductor made of a compound of one or more metals selected from gallium, indium and aluminum and nitrogen. Can be mentioned.

Hereinafter, although the susceptor of this invention and the vapor phase growth apparatus using the same are demonstrated in detail based on FIGS. 1-4, this invention is not limited by these.
FIG. 1 is a plan view showing an example of the susceptor of the present invention. FIG. 2 and FIG. 3 are vertical plane structural views showing an example of the vapor phase growth apparatus of the present invention. (FIG. 2 is a vapor phase growth apparatus having a mechanism for rotating the susceptor 5 by rotating the susceptor rotating plate 13, and FIG. 3 is a mechanism for rotating the susceptor 5 by rotating the susceptor rotating shaft 14. FIG. 4 is a configuration diagram showing an example of the susceptor rotation mechanism of the present invention (configuration diagram showing an example of the form of the susceptor 5 and the susceptor rotating plate 13).

As shown in FIG. 1, the susceptor of the present invention is a susceptor having a hole 1 in the center and a hole 2 for housing the substrate holder in the periphery, between the hole 1 in the center and the outer peripheral end 3. In addition, the susceptor is provided with a slit 4 so as not to come into contact with a hole for accommodating the substrate holder.
2 and 3, the vapor phase growth apparatus of the present invention includes a susceptor 6 for housing the substrate holder 5, a facing surface 7 of the susceptor, a heater 8 for heating the substrate, a susceptor 6 and the like. A vapor phase growth apparatus including a reaction furnace 9 having a gap between facing surfaces 7 of a susceptor, a source gas introduction part 10 for supplying a source gas to the reaction furnace 9, and a reaction gas discharge part 11, wherein the susceptor 6 is the above-mentioned present invention This is a vapor phase growth apparatus that is a susceptor.

Hereinafter, the susceptor of the present invention will be described.
Similar to the susceptors described in Patent Document 1, Patent Document 3, and Patent Document 5, the susceptor of the present invention has a hole in the central portion and a plurality of holes for housing the substrate holder (or substrate) in the peripheral portion. It is what has. The susceptor is formed with a slit 4 between the hole 1 in the center and the outer peripheral edge 3 so as not to come into contact with the hole 2 for housing the substrate holder. In the present invention, the size of the hole 2 for accommodating the substrate holder is not particularly limited, but it is possible to prevent the susceptor from cracking, particularly in the case of a size that holds a plurality of substrates of 3 inches or more. Can be effective in terms. The size of the hole 1 in the center is not particularly limited.

  The slit is usually provided on the shortest line connecting the hole 1 at the center and the outer peripheral end 3. The gap of the slit is usually 0.5 to 20 mm, preferably 0.8 to 5 mm. When the slit gap is less than 0.5 mm, the effect of preventing cracking is small, and when the slit gap exceeds 20 mm, the mechanical strength of the susceptor may be reduced. The slit is penetrated with respect to the thickness direction (vertical direction) of the susceptor. The number of holes for housing the substrate holder provided in the susceptor is usually 4 to 10, but is not particularly limited.

  The central hole 1 is provided for various purposes. For example, in a vapor phase growth apparatus as described in Patent Document 5, if a hole is provided in the center of the susceptor, all or part of the substrate holder rotating plate for rotating the substrate holder is used as the hole. Can be stored. The substrate holder rotating plate is rotated by transmission of a rotational force from an external motor, and a gear is provided on the outer periphery of the substrate holder and the substrate holder rotation, and from the substrate holder rotation to the substrate holder via the gear. Rotational force is transmitted to rotate the substrate holder. Further, a horizontal plate for uniformly and efficiently dispersing the source gas introduced from the vertical direction in the horizontal direction can be accommodated in the hole at the center of the susceptor.

  The size of the susceptor of the present invention is not particularly limited, but usually the diameter is 20 to 100 cm, and particularly when it is 30 cm or more, the effect of preventing cracking is easily exhibited. The thickness of the susceptor is usually 3 to 20 mm, although it depends on the diameter and material of the susceptor. The material of the susceptor is a carbon-based material such as carbon, pyrolytic graphite (PG) or glassy carbon (GC), or a carbon-based material coated with a ceramic material (PG-coated carbon, GC-coated carbon, SiC-coated carbon, etc. ) Is preferable, but a material such as quartz can also be used and is not particularly limited.

Next, the vapor phase growth apparatus of the present invention will be described.
The vapor phase growth apparatus of the present invention is a vapor phase growth apparatus that can use the above-described susceptor of the present invention, for example, a vapor phase growth apparatus as shown in FIGS.
The vapor phase growth apparatus shown in FIG. 2 is a vapor phase growth apparatus having a mechanism for rotating the susceptor 6 by rotating the susceptor rotating plate 14. In such a vapor phase growth apparatus, a susceptor rotating plate 14 having a gear on the outer periphery and rotating by transmission of a rotational force from an external motor includes a susceptor having a gear on the outer periphery and a gear as shown in FIG. Is installed to mesh. The susceptor rotates by driving the motor. 3 is a vapor phase growth apparatus having a mechanism for rotating the susceptor 6 by rotating the susceptor rotating shaft 15. In the vapor phase growth apparatus of the present invention, the mechanism and method for rotating the substrate, the substrate holder and the like are not particularly limited.
Although the susceptor shown in FIG. 1 does not have a gear on the outer periphery, a ring-shaped member having a gear on the outer peripheral side can be attached to the outer periphery of such a susceptor.

  In the vapor phase growth apparatus of the present invention, the facing surface 7 of the susceptor (substrate) is usually within 8 mm at a position on the upstream side of the substrate so that the gap between the facing surfaces of the substrate and the susceptor is within 10 mm. It is set to be within 5 mm at the downstream position. As the material of the facing surface 7 of the susceptor, a carbon-based material, a carbon-based material coated with a ceramic material, quartz, or the like can be used. Further, the flow path 13 for circulating the refrigerant is provided inside the facing surface 7 of the susceptor, so that the facing surface 7 of the susceptor can be cooled during vapor phase growth, and the reactants can be prevented from adhering to the surface of the facing surface 7 of the susceptor. It is possible to set as follows.

  For example, when vapor phase growth of a group III nitride semiconductor is performed using the vapor phase growth apparatus of the present invention, an organic metal compound (trimethylgallium, triethylgallium, trimethylindium, triethylindium, trimethylaluminum, triethyl) as a source gas is used. Aluminum, etc.), ammonia, and carrier gas (inert gas such as hydrogen, nitrogen, or a mixed gas thereof) are introduced into the source gas pipe 12 from the outside as shown in FIGS. Then, it is supplied to the part 10 and further introduced into the reaction furnace 9 from the source gas introduction part 10. The gas after the reaction is discharged from the reaction gas discharge unit 11 to the outside.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by these.

[Example 1]
(Production of susceptor)
A disk-shaped susceptor (SiC) as shown in FIG. 1 having a hole with a diameter of 20 cm in the center and six holes with a diameter of 17 cm in the periphery, a diameter of 80 cm, and a thickness of 8 to 15 mm (with irregularities on the surface). Coated carbon). A slit having a gap of 2.5 mm is provided between the central hole of the susceptor and the outer peripheral end. The slit is provided on the shortest line connecting the hole in the center and the outer peripheral end.

(Production of vapor phase growth equipment)
Inside the stainless steel reaction vessel, the above susceptor, facing the susceptor (made of SiC-coated carbon) with a structure for circulating the refrigerant, a heater, a source gas introduction part (made of carbon), a reaction gas discharge part, etc. are provided. Thus, a vapor phase growth apparatus as shown in FIG. 2 was manufactured. Further, six substrate holders holding a 6-inch sapphire substrate were set on the susceptor so that the gap between the substrate and the facing surface was 10 mm or less. In addition, as a flow path which distribute | circulates a refrigerant | coolant, one piping was arrange | positioned spirally toward the peripheral part from the center part.

(Susceptor temperature rise experiment)
Using such a vapor phase growth apparatus, a temperature increase experiment of the susceptor was conducted as follows to investigate whether or not the susceptor cracked. After starting the cooling water circulation to the facing cooling pipe, the substrate was rotated at 10 rpm and the susceptor was rotated at a rotation speed of 1 rpm, while nitrogen was passed from the source gas introduction part and the temperature of the susceptor (substrate) surface was 60 ° C. The temperature was increased to 1050 ° C. at a temperature increase rate of / min. After maintaining the temperature for 1 hour, the heater was turned off and the temperature of the susceptor was lowered to room temperature. Such an operation was repeated 10 times. As a result, no susceptor cracking occurred.

[Examples 2 and 3]
A susceptor was manufactured in the same manner as in Example 1 except that the slit gaps were changed to 1.5 mm and 5 mm, respectively, in the manufacture of the susceptor of Example 1.
A vapor phase growth apparatus was manufactured in the same manner as in Example 1 except that these susceptors were used, and a susceptor temperature increase experiment was performed. As a result, no susceptor cracking occurred in any of the examples.

[Example 4]
In the manufacture of the susceptor of Example 1, the susceptor was manufactured in the same manner as in Example 1 except that the peripheral holes were changed to 10 holes having a diameter of 12 cm. The slit had a gap of 2.5 mm.
A vapor phase growth apparatus was manufactured in the same manner as in Example 1 except that a 4-inch sapphire substrate was set using this susceptor, and a temperature increase experiment of the susceptor was performed. As a result, no susceptor cracking occurred.

[Comparative Example 1]
In the manufacture of the susceptor of Example 1, a susceptor was manufactured in the same manner as in Example 1 except that no slit was provided.
A vapor phase growth apparatus was manufactured in the same manner as in Example 1 except that this susceptor was used, and a temperature increase experiment of the susceptor was performed. As a result, the susceptor cracking occurred in the first susceptor temperature increase experiment, so the experiment was stopped. As a result of taking out and investigating the susceptor from the vapor phase growth apparatus, it was confirmed that a crack occurred between two holes in the central part and the peripheral part.

[Comparative Example 2]
In the temperature increase experiment of Comparative Example 1, the temperature increase experiment was performed in the same manner as in Comparative Example 1 except that the temperature increase rate of the susceptor was reduced to 40 ° C./min. As a result, the susceptor cracking occurred in the fourth susceptor temperature increase experiment, so the experiment was stopped. As a result of taking out and investigating the susceptor from the vapor phase growth apparatus, it was confirmed that a crack was generated between the hole in the central portion and one hole in the peripheral portion.

[Comparative Example 3]
In the manufacture of the susceptor of Example 4, a susceptor was manufactured in the same manner as in Example 4 except that no slit was provided.
A vapor phase growth apparatus was manufactured in the same manner as in Example 4 except that this susceptor was used, and a temperature increase experiment of the susceptor was performed. As a result, the susceptor cracking occurred in the third susceptor temperature increase experiment, so the experiment was stopped. As a result of taking out and investigating the susceptor from the vapor phase growth apparatus, it was confirmed that a crack was generated between the hole in the central portion and one hole in the peripheral portion.

  As described above, it has been confirmed that the susceptor of the present invention can prevent cracks caused by these even when heated rapidly or enlarged. In addition, since the vapor phase growth apparatus of the present invention is difficult to break the susceptor, the vapor phase growth can be efficiently performed on the surface of the substrate without interrupting or stopping the vapor phase growth due to the occurrence of cracks, and without frequently changing the susceptor. It was confirmed that growth can be performed.

Plane configuration diagram showing an example of the susceptor of the present invention Configuration diagram of a vertical surface showing an example of a vapor phase growth apparatus of the present invention Configuration diagram of a vertical plane showing an example of a vapor phase growth apparatus other than FIG. 2 of the present invention Configuration diagram showing an example of the rotation mechanism of the susceptor of the present invention

DESCRIPTION OF SYMBOLS 1 Hole of center part 2 Hole for accommodating substrate holder 3 Outer peripheral edge 4 Slit 5 Substrate holder 6 Susceptor 7 Face of susceptor 8 Heater 9 Reactor 10 Source gas introduction part 11 Reaction gas discharge part 12 Source gas piping 13 Refrigerant Flow path 14 Susceptor rotating plate 15 Susceptor rotating shaft

Claims (6)

  A susceptor having a hole in the central part and a hole for storing the substrate holder in the peripheral part, and a slit is provided between the hole in the central part and the outer peripheral end so as not to contact the hole for storing the substrate holder. A susceptor characterized by being provided.   The susceptor according to claim 1, wherein the slit has a gap of 0.5 to 20 mm.   The susceptor according to claim 1, wherein the slit is provided on the shortest line connecting the hole at the center and the outer peripheral end.   The susceptor according to claim 1, wherein the constituent material is carbon, pyrolytic graphite, glassy carbon, or a material obtained by coating these materials with a ceramic material.   The susceptor according to claim 1, which can hold a plurality of substrates having a size of 3 inches or more.   A susceptor for housing the substrate holder, a face of the susceptor, a heater for heating the substrate, a reaction furnace comprising a gap between the susceptor and the face of the susceptor, a feed gas introduction section for feeding a feed gas to the reaction furnace, And a gas phase growth apparatus having a reactive gas discharge unit, wherein the susceptor has a hole in the central part and a hole for accommodating the substrate holder in the peripheral part, and the hole between the central part and the outer peripheral end. A vapor phase growth apparatus characterized in that a slit is provided so as not to come into contact with a hole for housing the substrate holder.

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