JP2012227231A - Vapor-phase growth device of group iii nitride semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor-phase growth device of a group III nitride semiconductor, which has a structure in which a susceptor can easily be attached/detached, an excellent maintainability is provided, and heat conduction from a heater to a substrate holder rotation driver and a substrate holder rotation driving shaft can be suppressed, and which comprises: the substrate holder that holds a substrate; the susceptor that rotatably holds the substrate holder; an opposite face of the susceptor; the heater that heats the substrate; a reactor formed by a gap between the susceptor and the opposite face of the susceptor; a raw material gas introduction part for supplying a raw material gas; a reaction gas emission part; and a substrate holder rotation driver.SOLUTION: A plurality of substrate holders that holds a substrate is rotated by a rotation driving force which is transmitted from a substrate holder rotation driver through a substrate holder rotation driving shaft, a plurality of claws provided on the substrate holder rotation driving shaft, and a substrate holder rotation plate that is provided in the center part of a reactor and is attachably and detachably engaged with the claws.

Description

  The present invention includes a substrate holder for holding a substrate, a susceptor that rotatably holds the substrate holder, a face of the susceptor, a heater for heating the substrate, a reaction furnace including a gap between the face of the susceptor and the susceptor, The present invention relates to a group III nitride semiconductor vapor phase growth apparatus having a source gas introduction part for supplying a source gas from the central part to the peripheral part of the reaction furnace, a reactive gas discharge part, and a substrate holder rotation driver.

A method for growing a crystal film of a group III nitride semiconductor on a substrate such as silicon (Si), sapphire (Al ₂ O ₃ ), or gallium nitride (GaN) includes chemical vapor deposition (CVD). There is a method, and a thermal CVD method or the like is known as a CVD method involving substrate heating. In recent years, there has been an increase in the vapor phase growth process performed by heating the substrate under high temperature conditions (for example, 1000 ° C. or higher), and the vapor phase of a group III nitride semiconductor for producing a blue or ultraviolet LED or a blue or ultraviolet laser diode. The growth process is one of them. The formation of the group III nitride semiconductor film is, for example, a substrate heated to a high temperature of about 1000 ° C. using an organometallic gas such as trimethylgallium, trimethylindium, or trimethylaluminum as a group III metal source and ammonia as a nitrogen source. This is performed by a thermal CVD method in which a crystal film is vapor-grown.

A group III nitride semiconductor vapor phase growth apparatus includes an apparatus in which the crystal growth surface of the substrate is arranged upward (face-up type) and an apparatus in which the crystal growth surface of the substrate is arranged downward (face-down type). As such a vapor phase growth apparatus, there is a vapor phase growth apparatus that grows a crystal film on one substrate per batch. In order to improve productivity, a crystal film is formed on a plurality of substrates per batch. There is also known a vapor phase growth apparatus that grows the substrate.
The structure of the group III nitride semiconductor vapor phase growth apparatus includes a substrate holder for holding a substrate, a susceptor for rotatably holding the substrate holder, a face of the susceptor, a heater for heating the substrate, and the susceptor. A configuration having a reaction furnace composed of a gap between the surfaces of the susceptor, a raw material gas introduction part for supplying a raw material gas from the central part to the peripheral part of the reaction furnace, a reactive gas discharge part, and a substrate holder rotation driver is conceivable. .

  In such a vapor phase growth apparatus, in order to obtain a uniform film thickness and film quality, it is effective to grow a crystal film while rotating the substrate. When growing crystal films on a plurality of substrates per batch, the substrate is rotated by combining revolutions with the center of the reactor as the center of rotation and rotations with the center of the substrate as the center of rotation. A uniform film thickness and film quality can be obtained between the substrates and within the same substrate surface. In general, a substrate holder rotation driver that rotates a substrate holder that holds a substrate is installed outside a reaction vessel including a reaction furnace, and the driving force is a magnetic fluid that shields the inside and outside of the reaction vessel by a magnetic fluid. In many cases, it is transmitted to the substrate holder inside the reaction vessel by a substrate holder rotation drive shaft which is sealed with respect to the reaction vessel using a fluid seal or the like.

  For example, as such a vapor phase growth apparatus, there is a film forming apparatus described in Patent Document 1, but it is difficult to optimize film forming conditions because the ratio of the rotation speed and revolution speed of the substrate cannot be changed. There is a problem, and when removing the susceptor, the fixed gear (spinning generation part) has to be removed once, so that the susceptor is complicated to attach and detach and has a problem in maintenance. Further, as a semiconductor manufacturing apparatus capable of changing the ratio between the rotation speed and the revolution speed of the substrate, there is a semiconductor manufacturing apparatus described in Patent Document 2, but it has yet to provide a structure in which a susceptor can be easily detached. It wasn't.

  Further, there is a vapor phase growth apparatus described in Patent Document 3 in which the susceptor can be removed, but the ratio between the rotation speed and the revolution speed of the substrate cannot be changed, and the substrate holder and the substrate holder driving unit are not changed. The meshing is an ordinary spur gear structure, and the trouble of having to mesh between the substrate holder driving unit and the plurality of substrate holders at the time of susceptor attachment has not been solved. Furthermore, in the vapor phase growth apparatus described in Patent Documents 1 to 3, a structure for reducing heat conduction with respect to the rotation drive and the substrate holder rotation drive shaft has not been studied.

Japanese Patent No. 4533766 JP 2004-241460 A JP 2009-99770 A

In the group III nitride semiconductor vapor phase growth apparatus, since vapor phase growth is performed at a high temperature, deposits due to decomposition of the raw material gas are likely to occur in the member in contact with the raw material gas, and particularly close to the substrate. There is a problem that the substrate holder and the susceptor require frequent cleaning. Cleaning is often performed by taking the susceptor out of the reaction vessel, and it is desirable that the vapor phase growth apparatus improve the maintainability by adopting a structure in which the susceptor can be easily detached.
In addition, in a group III nitride semiconductor vapor phase growth apparatus, the substrate holder rotation drive is often not heat resistant, and the substrate holder rotation drive shaft is placed in a source gas atmosphere such as ammonia at a high temperature, and deterioration progresses. In many cases, it is preferable to have a structure that can suppress heat conduction from the heater as much as possible.

  That is, the problems to be solved by the present invention include a substrate holder that holds a substrate, a susceptor that rotatably holds the substrate holder, a face of the susceptor, a heater that heats the substrate, the susceptor and the susceptor. A reactor of a group III nitride semiconductor having a reaction furnace comprising a facing gap, a source gas introduction part for supplying a source gas from the central part to the peripheral part of the reaction furnace, a reaction gas discharge part, and a substrate holder rotation driver Vapor phase growth of III-nitride semiconductors, which is a phase growth apparatus, has a structure that allows easy removal of the susceptor, excellent maintainability, and suppresses heat conduction from the heater to the substrate holder rotation drive and the substrate holder rotation drive shaft. Is to provide a device.

  The inventors of the present invention have intensively studied to solve these problems. As a result, in the above-described vapor phase growth apparatus, at least a part of the rotation transmission mechanism from the substrate holder rotation driver to the substrate holder has a small cross section. The inventors have found that the above-described problems can be solved by using a claw and have reached the present invention.

  That is, the present invention relates to a reaction furnace comprising a substrate holder for holding a substrate, a susceptor for rotatably holding the substrate holder, a facing surface of the susceptor, a heater for heating the substrate, and a gap between the facing surface of the susceptor and the susceptor. The substrate holder that holds the substrate has a source gas introduction unit that supplies a source gas from the central part to the peripheral part of the reaction furnace, a reaction gas discharge unit, and a substrate holder rotation driver. A plurality of group III nitride semiconductor vapor phase growth apparatuses provided around the substrate, wherein a plurality of substrate holders for holding a substrate are supplied from a substrate holder rotation driver, a substrate holder rotation drive shaft, and the substrate holder rotation drive By a plurality of claws provided on the shaft and a rotational driving force transmitted through a substrate holder rotating plate provided at the center of the reaction furnace and detachably engaged with the claws. A vapor phase growing device for the Group III nitride semiconductor, characterized in that the arrangement of rolling.

According to the present invention, it is possible to remove the engagement between the substrate holder rotating plate and the claw only by moving the substrate holder rotation driving shaft in the vertical direction, and the trouble of susceptor attachment / detachment is eliminated. Therefore, the present invention provides a group III nitride semiconductor vapor phase growth apparatus in which the susceptor can be easily detached and has excellent maintainability.
In the vapor phase growth apparatus of the present invention, the substrate holder rotating plate is meshed with a claw having a small cross-sectional area with a gap in the horizontal direction and the vertical direction, and when the mesh is formed, A gap is formed between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotation drive shaft. As a result, the transfer of heat from the substrate holder rotating plate heated by the heater to the substrate holder rotating drive shaft is suppressed, and further, the transfer of heat to the substrate holder rotating drive is suppressed.

The present invention includes a substrate holder for holding a substrate, a susceptor that rotatably holds the substrate holder, a face of the susceptor, a heater for heating the substrate, a reaction furnace including a gap between the face of the susceptor and the susceptor, The substrate holder for holding the substrate has a source gas introduction part for supplying a source gas from the central part of the reaction furnace to the peripheral part, a reaction gas discharge part, and a substrate holder rotation driver. The present invention is applied to a group III nitride semiconductor vapor phase growth apparatus provided around the periphery.
Hereinafter, although the vapor phase growth apparatus of this invention is demonstrated in detail based on FIGS. 1-3, this invention is not limited by these. 1 is a schematic vertical sectional view showing an example of the vapor phase growth apparatus of the present invention, FIG. 2 is a schematic horizontal sectional view of the vapor phase growth apparatus of the present invention (cross section AA in FIG. 1), FIG. These are the horizontal cross-sectional schematic diagrams (BB cross section in FIG. 1) of the vapor phase growth apparatus of this invention.

  In the vapor phase growth apparatus of FIG. 1, the substrate 1 is held by a substrate holder 2 with the growth surface facing downward. The substrate holder 2 can hold one substrate having a diameter of 2 inches, 3 inches, 4 inches, or 6 inches, but is not limited to a substrate of these sizes. Here, in order to uniformly transfer the heat from the heater 5 to the substrate 1, a soaking plate 16 may be provided. The substrate holder 2 is rotatably held on the susceptor 3 via a bearing 17 sandwiched between bearing grooves 18 carved on the lower surface of the substrate holder 2 and the upper surface of the susceptor 3. The bearing 17 is preferably spherical with a diameter of 3 to 10 mm. The cross section in the vertical direction of the bearing groove 18 is preferably a semicircle, a triangle, or a quadrangle, but is not particularly limited.

  On the other hand, the susceptor 3 forms a reaction furnace 6 together with the facing 4 of the susceptor, and the reaction furnace 6 is housed in a reaction vessel 19 and sealed. The susceptor 3 has a disk shape with a diameter of 300 to 1000 mm and a thickness of 5 to 30 mm, and can hold 6 to 15 substrate holders 2, but is not particularly limited. In the reaction furnace 6, the gap between the susceptor 3 and the facing surface 4 of the susceptor is preferably 8 mm or less, more preferably 5 mm or less, but the gap is not particularly limited to these sizes.

  The rotational driving force from the substrate holder rotation driver 9 is first transmitted to a substrate holder rotation driving shaft 10 that is rotatably sealed with respect to the reaction vessel 19 using a magnetic fluid seal. A plurality of claws 11 are provided at the tip of the substrate holder rotation drive shaft 10 on the substrate holder rotation plate side, and the claw 11 is inserted into an insertion port provided on the upper surface of the substrate holder rotation plate 12. Engageably and detachably, the rotational driving force is transmitted to the substrate holder rotating plate 12.

  The substrate holder rotating plate 12 is rotatably held by the susceptor 3 through a bearing 17 sandwiched by bearing grooves 18 carved on the lower surface of the substrate holder rotating plate 12 and the upper surface of the susceptor 3. A plurality of substrate holders 2 are provided around the source gas introducing portion 7, and a spur gear portion provided at an edge portion of the substrate holder rotating plate 12 and a spur gear portion provided at an edge portion of each substrate holder 2. , The rotational driving force is transmitted to each substrate holder 2, and each substrate holder 2 rotates by rotation.

  The substrate holder rotating plate 12 preferably has a disc-shaped spur gear structure having a diameter of 100 to 500 mm and a thickness of 3 to 20 mm, but is not particularly limited. The substrate holder rotation drive shaft 10 is preferably a cylindrical shape having a diameter of 10 to 50 mm, but is not particularly limited. The claw 11 is a cylinder, an elliptic cylinder, a prism, a cone, a pyramid, or a shape similar to these, or a combination thereof, but is preferably a cylinder having a diameter of 3 to 10 mm and a length of 10 to 30 mm. Furthermore, the claw 11 has a columnar shape of such a size so that the claw 11 can be easily engaged with the substrate holder rotating plate 12, and is 3 to 10 mm in the length direction (included in the columnar length). More preferably, the tip end of) is processed into a conical shape. Moreover, although it is preferable that 2-10 claws 11 are provided, it is not limited to these numbers in particular.

  Further, the sum of the cross-sectional areas of all the claws 11 is smaller than the cross-sectional area of the substrate holder rotation driving shaft 10 and is (total of the cross-sectional areas of all the claws 11) / (the cross-sectional area of the substrate holder rotation driving shaft 10). The ratio is more preferably 0.1 to 0.5, but the ratio is not particularly limited to this range. The insertion port 24 of the claw 11 provided on the upper surface of the substrate holder rotating plate 12 may be a through-hole penetrating to the lower surface of the substrate holder rotating plate 12 or a recess that does not penetrate. The insertion hole of the claw 11 is provided at one place for each claw and is preferably a recess having a diameter of 6 to 30 mm and a depth of 5 to 20 mm, but is not particularly limited.

  Further, it is preferable that there is a gap between the upper surface of the substrate holder rotating plate 12 and the lower surface of the substrate holder rotation drive shaft 10 when the engagement is formed. If there is no gap, the substrate holder rotation drive shaft may thermally expand when heated, and the substrate holder rotation plate may be pressed downward to cause a malfunction. The gap is preferably about 1 to 20 mm, but is not particularly limited. Further, when the substrate holder rotating plate and the claw are engaged with each other, a horizontal and vertical gap is preferably formed between the inner surface of the insertion port provided in the substrate holder rotating plate and the tip of the claw. . In particular, when the insertion port 24 is a recess that does not penetrate, and there is no gap in the vertical direction (between the bottom surface of the insertion port and the tip of the claw), the substrate holder rotation drive shaft thermally expands when heated. The substrate holder rotating plate may be pressed downward to cause a malfunction. The gap is preferably 1 to 20 mm in the horizontal direction and 1 mm or more in the vertical direction, but is not particularly limited.

  In the vapor phase growth apparatus of the present invention, the susceptor is installed on the susceptor support plate, the susceptor support plate is rotatably held, and the susceptor support plate is rotated by a rotational driving force transmitted from the susceptor rotation driver. Accordingly, it is preferable that the susceptor rotate. Thereby, by revolving the substrate, a uniform film thickness and film quality can be obtained not only within the same substrate plane but also between the substrates. That is, the susceptor 3 is installed on the susceptor support plate 20, and the susceptor support plate 20 is mounted on the base via the bearing 17 sandwiched by the bearing grooves 18 carved on the lower surface of the susceptor support plate 20 and the upper surface of the base 21. 21 is rotatably held. The susceptor support plate 20 is preferably installed on the base 21 so as not to be displaced by a method such as fitting. At this time, the rotational driving force from the susceptor rotation drive unit 13 is transmitted to the susceptor rotation drive shaft 14 and provided at the edge of the susceptor rotation plate 15 fixed to the susceptor support plate side tip of the susceptor rotation drive shaft 14. When the spur gear portion and the spur gear portion provided at the edge of the susceptor support plate 20 are engaged with each other, a rotational driving force is transmitted to the susceptor support plate 20 and the susceptor support plate 20 rotates. At the same time, the susceptor 3 installed on the susceptor support plate 20 also rotates, and the substrate holder 2 disposed on the susceptor 3 revolves. It is preferable to always revolve the substrate holder 2 during the vapor phase growth reaction.

  The rotation direction and rotation speed of the substrate holder 2 and the susceptor 3 can be arbitrarily set by changing the rotation direction and rotation speed of the substrate holder rotation driver 9 and the susceptor rotation driver 13, respectively. An extendable bellows tube 22 may be provided so that the claw 11 can be pulled out from the insertion port provided in the substrate holder rotating plate 12 by moving the substrate holder rotating shaft 10 up and down. A susceptor elevating mechanism 23 for elevating the susceptor 3 by moving up and down may be provided so that the susceptor 3 can be easily taken out.

  A source gas introduction unit 7 is provided at the center of the reaction furnace 6, and the source gas is blown out radially from the source gas introduction unit 7 and supplied horizontally to the growth surface of the substrate 1. The vapor phase growth reaction is performed by supplying the source gas from the source gas introduction unit 7 while heating the substrate 1 with the heater 5 in the reaction furnace 6, and the growth surface of the substrate 1 is made of a group III nitride semiconductor. A crystal film is formed. The raw material gas used for the vapor phase growth reaction is directly discharged from the reaction gas discharge unit 8 as a reaction gas. It is preferable to always rotate the substrate holder 2 during the vapor phase growth reaction. In order to obtain a uniform film thickness and film quality between the substrates, it is preferable to arrange the substrate holders 2 on the same circumference with respect to the center of the reaction furnace so that the distances from the raw material gas introduction portions are equal. However, it is not particularly limited.

  The substrate holder 2, the susceptor 3, and the substrate holder rotating plate 12 are preferably carbon materials or carbon materials coated with a ceramic material, but are not particularly limited. The substrate holder rotation drive shaft 10 and the claw 11 are preferably metal, alloy, metal oxide, carbon-based material, ceramic-based material, carbon-based material coated with a ceramic material, or a combination thereof, but is not particularly limited. The bearing 17 is preferably made of a ceramic material, but is not particularly limited. Here, examples of the alloy include stainless steel and inconel, but are not particularly limited. Examples of the carbon-based material include, but are not particularly limited to, carbon, pyrolytic graphite (PG), and glassy carbon (GC). Examples of the ceramic material include alumina, silicon carbide (SiC), silicon nitride (SiN), boron nitride (BN), and the like, but are not particularly limited.

In particular, the substrate holder 2, the susceptor 3 and the substrate holder rotating plate 12 are preferably SiC-coated carbon, and the bearing 17 is alumina, but is not particularly limited. The substrate holder rotation drive shaft 10 is made of Inconel on the side of the substrate holder rotation drive to ensure strength, and the substrate holder rotation plate is used to prevent breakage when engaging with the substrate holder rotation plate 12. It is preferable that the side portion is made of SiC coated carbon and is integrated by fixing both with screws or the like. The claw 11 is made of SiC coated carbon and is formed on the end surface of the substrate holder rotating plate side portion of the substrate holder rotating drive shaft. It is preferable that they are integrally formed in advance.
1 to 3 show an example of the vapor phase growth apparatus of the present invention (face-down type), but an embodiment of the present invention is a face-up type vapor phase growth apparatus within the scope of the present invention. Is also applicable.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by these.

[Example 1]
(Production of vapor phase growth equipment)
A vapor phase growth apparatus as shown in FIGS. 1 to 3 was manufactured. Eight substrate holders 2 (SiC coated carbon) capable of holding one 3 inch diameter sapphire substrate and a substrate holder rotating plate 12 (SiC coated carbon, diameter 200 mm, thickness 15 mm) are connected to a susceptor 3 (SiC The substrate holder 2 and the spur gear portion of the substrate holder rotating plate 12 are engaged with each other by holding the substrate 17 through a bearing carbon 17 (made of coated carbon, 600 mm in diameter, 20 mm in thickness, and capable of holding three 3-inch substrates).

  The claw 11 has a cylindrical shape with a cross-sectional diameter of 5 mm and a length of 12 mm (including a conical portion), the tip of which is processed into a conical shape, and the front end of the substrate holder rotary drive shaft 10 having a cross-sectional diameter of 20 mm. Three were provided at regular intervals. As the insertion port 24 of the claw 11, a cylindrical recess having a diameter of 10 mm and a depth of 12 mm was provided on the upper surface of the substrate holder rotating plate 12, one for each claw. Between the claw 11 and the recess, a maximum gap of 5 mm is generated in the horizontal direction and a gap of 5 mm is provided in the vertical direction. Therefore, a gap of 5 mm is provided between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotating drive shaft. A gap was created.

  The substrate holder rotation drive shaft 10 is made of Inconel and SiC coated carbon, the substrate holder rotation drive side portion is made of Inconel (columnar shape with a diameter of 20 mm and a length of 270 mm), and the substrate holder rotation plate side portion is made of SiC coated carbon ( The substrate holder rotating drive shaft 10 was integrated by fixing both with a carbon screw. The claw 11 is made of SiC-coated carbon, and is integrally formed in advance on the lower surface of the substrate holder rotation drive shaft 10. The facing surface 4 of the susceptor, the susceptor support plate 20 and the base 21 were made of carbon, and the reaction vessel 19 was made of stainless steel.

(Temperature measurement)
Using such a vapor phase growth apparatus, the temperature of the substrate holder rotation drive shaft was measured. First, a substrate (diameter 3 inches, sapphire) was set on the substrate holder, the substrate holder rotation drive unit was stopped, and treatment was performed so that the substrate holder rotation drive shaft could not rotate freely. After that, the substrate was revolved (1 rpm) by operating only the susceptor rotation driver, and the substrate also rotated along with it. This state was maintained until the temperature measurement was completed, and the inside of the reaction vessel was kept at atmospheric pressure. Next, the temperature of the substrate was raised to 1050 ° C. while flowing hydrogen from the source gas introduction part, and the temperature of the upper surface of the substrate holder rotation drive shaft (substrate holder rotation drive side) was measured to be 41 ° C.

(Vapor phase growth experiment)
Using such a vapor phase growth apparatus, gallium nitride (GaN) was grown on the surface of the substrate. First, a substrate (3-inch diameter, sapphire) substrate was set in the substrate holder, the substrate holder rotation driver and the susceptor rotation driver were operated, and rotation (10 rpm) and revolution (1 rpm) of the substrate were started. After all the growth was completed, the rotation and revolution of the substrate were continued at these speeds until the heater temperature decreased to around room temperature, and the inside of the reaction vessel was kept at atmospheric pressure.

  Next, the temperature of the substrate was raised to 1050 ° C. while flowing hydrogen from the source gas introduction part, and the substrate was cleaned. Subsequently, the heater temperature is lowered to 510 ° C., and a buffer layer having a thickness of 20 μm made of GaN is grown on the sapphire substrate using trimethylgallium (TMG) and ammonia as source gases and hydrogen as a carrier gas. After the layer growth, the supply of only TMG was stopped, and the heater temperature was raised to 1050 ° C. Thereafter, hydrogen and nitrogen were supplied as carrier gases in addition to TMG and ammonia from the source gas introduction part, and undoped GaN was grown for 1 hour.

  After the group III nitride semiconductor was grown as described above, it was allowed to cool to near room temperature, and the substrate was taken out from the reaction vessel. The substrate holder rotation drive and the susceptor rotation drive operate normally from the start to the end of rotation and revolution of the substrate. After standing to cool, each component in the reaction vessel was visually inspected. There was no.

(Removal of susceptor)
After completion of the vapor phase growth experiment, the substrate was allowed to cool to near room temperature, then the reaction vessel was opened, the substrate holder rotation drive shaft was moved upward, and the claw was pulled out from the recess of the substrate holder rotation plate. Thereafter, when the susceptor was lifted by the susceptor lifting mechanism and removed manually, the susceptor could be easily taken out of the reaction vessel while holding the substrate holder, the substrate holder rotating plate and the bearing.

  After cleaning the substrate holder, susceptor, etc. outside the reaction vessel, the substrate holder, the substrate holder rotating plate, and the susceptor holding the bearing are manually installed in the reaction vessel, and the susceptor lifting mechanism is installed on the base. Returned to place. After returning the substrate holder rotation drive shaft to the initial position, the reaction vessel was sealed, and the vapor phase growth experiment was performed again. The substrate holder rotation drive and the susceptor rotation drive operate normally from the start to the end of rotation and revolution of the substrate. After standing to cool, each component in the reaction vessel was visually inspected. There was no.

[Example 2]
(Production of vapor phase growth equipment)
As a claw insertion port, a through hole having a diameter of 10 mm that penetrates the substrate holder rotating plate was provided for each claw. A gap of 5 mm at maximum is generated between the claw 11 and the through hole in the horizontal direction, and a gap of 5 mm is provided between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotation drive shaft. Other than that, the thing similar to the vapor phase growth apparatus of Example 1 was produced.

(Temperature measurement)
Using such a vapor phase growth apparatus, the same temperature measurement as in Example 1 was performed. As a result, the temperature of the upper surface of the substrate holder rotation drive shaft was 40 ° C.
(Vapor phase growth experiment)
Using such a vapor phase growth apparatus, the same vapor phase growth experiment as in Example 1 was performed. As a result, from the start to the end of rotation and revolution of the substrate, the substrate holder rotation drive and the susceptor rotation drive operated normally. There was no abnormality.

(Removal of susceptor)
After completion of the vapor phase growth experiment, the susceptor was taken out in the same manner as in Example 1. As a result, the susceptor could be easily taken out of the reaction vessel while holding the substrate holder, the substrate holder rotating plate, and the bearing.
Further, the susceptor is returned to a predetermined position in the reaction vessel by the same operation as in Example 1, the substrate holder rotation drive shaft is returned to the original position, the reaction vessel is sealed, and the gas phase similar to that in Example 1 is obtained. The growth experiment was performed again. The substrate holder rotation drive and the susceptor rotation drive operate normally from the start to the end of rotation and revolution of the substrate. After standing to cool, each component in the reaction vessel was visually inspected. There was no.

[Comparative Example 1]
(Production of vapor phase growth equipment)
Except that both are brought into contact with each other so that no gap is formed between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotation drive shaft, and the tips of the claws are brought into contact with the bottom surfaces of the recesses, the same as in the first embodiment A phase growth device was fabricated.
(Temperature measurement)
Using such a vapor phase growth apparatus, the same temperature measurement as in Example 1 was performed. As a result, the temperature of the upper surface of the substrate holder rotation drive shaft was 53 ° C.

[Comparative Example 2]
(Production of vapor phase growth equipment)
A vapor phase growth apparatus similar to that of Example 2 was manufactured, except that the gap between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotation drive shaft was not in contact with each other.
(Temperature measurement)
Using such a vapor phase growth apparatus, the same temperature measurement as in Example 2 was performed. As a result, the temperature of the upper surface of the substrate holder rotation drive shaft was 49 ° C.

  As described above, the vapor phase growth apparatus of the present invention is easy to attach and detach the susceptor, has excellent maintainability, and can suppress heat conduction from the heater to the substrate holder rotation drive unit and the substrate holder rotation drive shaft.

It is the vertical cross-sectional schematic which shows an example of the vapor phase growth apparatus of this invention. It is a horizontal section schematic diagram (AA section in Drawing 1) of the vapor phase growth apparatus of the present invention. It is a horizontal section schematic diagram (BB section in Drawing 1) of the vapor phase growth apparatus of the present invention.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Substrate holder 3 Susceptor 4 Face of susceptor 5 Heater 6 Reaction furnace 7 Raw material gas introduction part 8 Reaction gas discharge part 9 Substrate holder rotation drive 10 Substrate holder rotation drive shaft 11 Claw 12 Substrate holder rotation plate 13 Susceptor rotation drive Reference Signs List 14 susceptor rotation drive shaft 15 susceptor rotation plate 16 heat equalizing plate 17 bearing 18 bearing groove 19 reaction vessel 20 susceptor support plate 21 base 22 bellows tube 23 susceptor elevating mechanism 24 outlet

Claims (7)

  A substrate holder for holding a substrate, a susceptor for rotatably holding the substrate holder, a facing surface of the susceptor, a heater for heating the substrate, a reaction furnace comprising a gap between the facing surface of the susceptor and the susceptor, There are a plurality of substrate holders around the source gas introduction part that have a source gas introduction part for supplying a source gas from the central part to the peripheral part, a reaction gas discharge part, and a substrate holder rotation drive. A group III nitride semiconductor vapor phase growth apparatus provided, wherein a plurality of substrate holders for holding a substrate are provided from a substrate holder rotation drive unit to a substrate holder rotation drive shaft and the substrate holder rotation drive shaft It is configured to rotate by a rotational driving force transmitted through a plurality of claws and a substrate holder rotating plate that is provided at the center of the reactor and is detachably engaged with the claws. Preparative III nitride semiconductor of the vapor phase growth apparatus according to claim.   2. The gas phase according to claim 1, wherein the susceptor is configured to rotate by a rotational driving force transmitted from the susceptor rotation driver through a susceptor rotation drive shaft, a susceptor rotation plate, and a susceptor support plate that holds the susceptor. Growth equipment.   The vapor phase growth apparatus according to claim 1, wherein when the substrate holder rotating plate and the claw are engaged with each other, a gap is formed between the upper surface of the substrate holder rotating plate and the lower surface of the substrate holder rotation drive shaft.   The vapor phase growth apparatus according to claim 1, wherein a claw insertion port is provided on an upper portion of the substrate holder rotating plate.   5. The vapor phase growth apparatus according to claim 4, wherein when the substrate holder rotating plate and the claw are engaged with each other, a gap is formed between the bottom surface of the insertion port provided in the substrate holder rotating plate and the tip of the claw.   The horizontal and vertical gaps are formed between the inner surface of the insertion port provided in the substrate holder rotating plate and the tip of the claw when the substrate holder rotating plate and the claw are engaged with each other. Vapor growth equipment.   The vapor phase growth apparatus according to claim 4, wherein the insertion hole of the claw is a through hole penetrating the substrate holder rotating plate.

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