JP2013016549A - Vapor phase growth apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which includes a substrate holder which holds a substrate; a susceptor which rotatably holds the substrate holder and a susceptor holding mechanism which rotatably holds the susceptor, and which facilitates replacement of the substrate and removing and installing of the susceptor.SOLUTION: A susceptor is formed of a disk-like member for holding a substrate holder and a ring-shaped member capable of being separated from the disk-like member and a part of a holding mechanism for rotatably holding the susceptor is provided in the ring-shaped member.

Description

  The present invention relates to a vapor phase growth apparatus excellent in operability, and more particularly to a vapor phase growth apparatus in which a substrate can be easily replaced.

As a method for growing a crystal film on a substrate, there are methods such as a chemical vapor deposition (CVD) method, and as a CVD method involving substrate heating, a thermal CVD method or the like is known.
In recent years, there has been an increase in the vapor phase growth process performed by heating the substrate under a high temperature condition (for example, 1000 ° C. or more), and the vapor phase of a group III nitride semiconductor for producing a blue or ultraviolet LED or a blue or ultraviolet laser diode. The growth process is one of them. For example, the growth of a group III nitride semiconductor crystal film was heated to a high temperature of 1000 ° C. or higher using an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum as a group III metal source and ammonia as a nitrogen source. The thermal CVD method is sometimes performed by vapor-phase-growing a crystal film on a substrate such as silicon (Si), sapphire (Al ₂ O ₃ ), or gallium nitride (GaN).

As the vapor phase growth apparatus, there are an apparatus in which the crystal growth surface of the substrate is arranged upward (face-up type) and an apparatus in which the crystal growth surface of the substrate is arranged downward (face-down type). In addition, there is a vapor phase growth apparatus that grows a crystal film on one substrate per batch, but there is also a vapor phase growth apparatus that grows a crystal film on multiple substrates per batch in order to improve productivity. Are known.
In order to obtain a uniform film thickness and film quality, it is effective to grow a crystal film on the substrate while rotating and revolving the substrate. For example, in a vapor phase growth apparatus in which a plurality of substrate holders are provided around the source gas introduction unit or downstream of the gas flow, the substrate holder is rotatably held on the susceptor held rotatably, and the susceptor rotates. By rotating the substrate by the rotation of the substrate holder and rotating the substrate by rotating the substrate holder, a uniform film thickness and film quality can be obtained between the substrates and within the same substrate surface.

  As a susceptor holding mechanism in such a vapor phase growth apparatus, as shown in Patent Document 1, a gantry supporting the susceptor, a bearing groove provided on the upper surface of the gantry, a bearing groove provided on the lower surface of the susceptor, and One having a bearing ball sandwiched in a bearing groove may be mentioned. Moreover, as a structure for the susceptor to receive the rotational driving force from the outside, as shown in Patent Documents 1 to 4, a structure provided with a method of transmitting via a gear provided on the outer periphery of the susceptor is given. It is done.

JP 2002-17592 A JP 2010-219225 A JP 2010-232624 A JP 2011-18895 A

  In the vapor phase growth apparatus, when the vapor phase growth is completed and the substrate is recovered, the susceptor is removed from the vapor phase growth apparatus and cooled in another place, and then the substrate is removed from the susceptor and recovered. This is because a susceptor carrying a new substrate is immediately attached to a vapor phase growth apparatus for efficient vapor phase growth. However, in the vapor phase growth apparatus provided with a susceptor holding mechanism using a bearing ball as in Patent Document 1, the bearing ball is removed when the susceptor is detached from the vapor phase growth apparatus and when the susceptor is attached to the vapor phase growth apparatus. Since there is a possibility of dropping from the bearing groove, a highly accurate operation is required at that time. In addition, in the case of the vapor phase growth apparatus provided with the structure for transmitting the rotational driving force via the gear provided on the outer periphery of the susceptor as in Patent Documents 1 to 4, it is also necessary to perform an operation for further meshing the gear. is there.

  Therefore, the problem to be solved by the present invention is a vapor phase growth apparatus provided with a substrate holder for holding a substrate, a susceptor for holding the substrate holder in a rotatable manner, and a susceptor holding mechanism for holding the susceptor in a rotatable manner. In the above, it is to provide a vapor phase growth apparatus that can easily remove the susceptor from the vapor phase growth apparatus and attach it to the vapor phase growth apparatus when replacing the substrate.

  The inventors of the present invention have intensively studied to solve such a problem. As a result, in the above-described vapor phase growth apparatus, the susceptor includes a disk-shaped member that holds the substrate holder, and a bearing groove (susceptor holding). A ring-shaped member having a part of the mechanism), and setting the disk-shaped member and the ring-shaped member so that they can be easily separated. It has been found that it is only necessary to attach and remove the disk-shaped member that does not, and has reached the vapor phase growth apparatus of the present invention.

  That is, the present invention is a vapor phase growth apparatus provided with a substrate holder that holds a substrate, a susceptor that rotatably holds the substrate holder, and a susceptor holding mechanism that rotatably holds the susceptor. A vapor phase growth apparatus comprising: a disk-shaped member that holds a substrate holder; and a ring-shaped member that can be separated from the disk-shaped member, wherein the ring-shaped member is provided with a part of a susceptor holding mechanism. .

  The vapor phase growth apparatus of the present invention does not require the bearing ball to fall out of the bearing groove when the substrate is replaced, so that a highly accurate operation is not required, and the vapor phase of the susceptor (a disk-like member holding the substrate holder). Removal from the growth apparatus and attachment to the vapor phase growth apparatus can be easily performed. As a result, it is possible to shorten the substrate replacement time.

  The present invention is applied to a vapor phase growth apparatus including a substrate holder that holds a substrate, a susceptor that rotatably holds the substrate holder, and a susceptor holding mechanism that rotatably holds the susceptor. Hereinafter, although the vapor phase growth apparatus of this invention is demonstrated in detail based on FIGS. 1-7, this invention is not limited by these. 1 is a vertical sectional view showing an example of the vapor phase growth apparatus of the present invention, and FIGS. 2 to 4 are partial enlarged views showing an example of the structure near the bearing groove of the vapor phase growth apparatus shown in FIG. FIG. 5 is a horizontal cross-sectional configuration diagram (cross section BB) of the vapor phase growth apparatus shown in FIG. 1, and FIG. 6 is a horizontal view of the vapor phase growth apparatus shown in FIG. FIG. 7 is a cross-sectional configuration diagram (cross-section CC), and FIG. 7 is a top view showing an example of a susceptor used in the vapor phase growth apparatus of the present invention.

  As shown in FIG. 1, the present invention includes a substrate holder 2 that holds a substrate 1, a susceptor 3 that rotatably holds the substrate holder 2, and a susceptor holding mechanism that rotatably holds the susceptor 3. As shown in FIG. 2, the susceptor 3 includes a disk-shaped member 21 that holds a substrate holder, and a ring-shaped member 22 that can be separated from the disk-shaped member 21. This is a vapor phase growth apparatus provided with a part of the susceptor holding mechanism (the bearing groove 18 in FIG. 2).

  The structure of the susceptor as described above in the present invention is described in JP-A-2002-261021 as well as a vapor phase growth apparatus as shown in FIG. 1 in which a source gas introduction part is provided at the center of the reaction vessel. The present invention can also be applied to a vapor phase growth apparatus (horizontal vapor phase growth apparatus) in which a source gas introduction unit is provided at the end of the reaction vessel. Moreover, the structure of the susceptor of the present invention includes a vapor phase growth apparatus as shown in FIGS. 2 and 3 that rotates the susceptor via a gear provided on the outer periphery of the susceptor, and a rotation provided at the center of the reaction vessel. The present invention can also be applied to a vapor phase growth apparatus in which a susceptor is rotated by a drive shaft.

  2 to 4, the susceptor holding mechanism according to the present invention includes a gantry 20 that supports the susceptor 3, a bearing groove 18 provided on the upper surface of the gantry 20, and a bearing provided on the lower surface of the ring-shaped member. It is comprised from the member containing the groove | channel 18 and the bearing ball 17 clamped by these bearing grooves.

Hereinafter, details of the vapor phase growth apparatus of the present invention will be described.
As shown in FIG. 1, the substrate 1 is held by a substrate holder 2 with the growth surface facing downward. The substrate holder 2 can hold one substrate having a diameter of 2 inches, 3 inches, 4 inches, or 6 inches, but is not limited to a substrate of these sizes. Here, in order to uniformly transfer the heat from the heater 5 to the substrate 1, a soaking plate 16 may be provided. The susceptor 3 forms a reaction furnace 6 together with the facing 4 of the susceptor, and the reaction furnace 6 is housed in a reaction vessel 19 and sealed. The susceptor 3 can preferably hold 6 to 15 substrate holders 2, but is not particularly limited. In the reaction furnace 6, the gap between the susceptor 3 and the facing surface 4 of the susceptor is preferably 8 mm or less, more preferably 5 mm or less, but the gap is not particularly limited to these sizes.

  In the present invention, the structure of the susceptor is as follows: (1) a vapor phase growth apparatus that rotates the susceptor via a gear provided on the outer periphery of the susceptor; (2) the susceptor is driven by a rotary drive shaft provided at the center of the reaction vessel. The structure varies depending on the rotating vapor phase growth apparatus. That is, in the vapor phase growth apparatus of (1), as shown in FIG. 2, a configuration comprising a disk-shaped member 21 that holds a substrate holder, a ring-shaped member 22 having a bearing groove 18, and a gear 25, In the vapor phase growth apparatus 2), as shown in FIG. 4, the disk-shaped member 21 holding the substrate holder and the ring-shaped member 22 having the bearing groove 18 are used. In the vapor phase growth apparatus (1), as shown in FIG. 3, the ring-shaped member 22 can be composed of a bearing groove portion 23 and a gear portion 24 that can be separated from each other.

  The disk-shaped member 21 is usually installed on the ring-shaped member 22 so that it can be easily separated. For example, as shown in FIGS. 2 to 4, the structure is formed by fitting, and when replacing the substrate, the disk-shaped member 21 can be easily detached from the ring-shaped member 22 and the disk-shaped member 21 can be easily attached to the ring-shaped member 22. Be made possible. More specifically, the disc-like member 21 is fitted with the bearing groove 23 so as to be supported by a protrusion provided at the lower inner periphery of the bearing groove 23. By adopting such a configuration, the susceptor 3 is not separated from the mount 20 at the bearing ball groove 18 at the time of replacing the substrate, so that the bearing ball 17 can be prevented from falling off the bearing groove 18.

  The disk-shaped member 21 in the present invention is not particularly limited in shape and the like as long as it has a form capable of exhibiting the functions as described above. For example, a hole for inserting a substrate holder and a hole in the center part may be provided. In addition, the shape can be similar to a disk shape. Similarly to the above, the ring-shaped member 22 can have a shape similar to a ring.

  In the configuration as shown in FIG. 3, the ring-shaped member 22 is formed by superimposing the upper surface of the projecting portion provided at the lower outer periphery of the bearing groove portion 23 and the lower surface of the projecting portion provided at the upper inner peripheral portion of the gear portion 24. The bearing groove portion 23 is formed by fitting to the gear portion 24. When the bearing groove portion 23 is fitted to the gear portion 24, a radial gap may be formed between the bearing groove portion 23 and the gear portion 24. The bearing groove portion 23 and the gear portion 24 may be coupled by any coupling means, and examples of the coupling means include spirals, bolts and nuts, pins, and fittings, but are not limited to these coupling means. . For example, when the bearing groove portion 23 and the gear portion 24 are fixed by the spiral 26, a through hole through which the spiral 26 passes is provided in the gear portion 24, and a spiral hole for fixing the spiral 26 is provided in the bearing groove portion 23. After passing through the hole, fix it in the spiral hole. A gear 25 is provided on the outer periphery of the gear portion 24, and the gear 25 of the susceptor is meshed with a gear provided on the outer periphery of the susceptor rotating plate 15, and receives a rotational driving force. Since the susceptor 3 is rotatably held by the susceptor holding mechanism described above, the susceptor 3 is rotated by a rotational driving force from the susceptor rotating plate 15. In the vapor phase growth apparatus of the present invention, an elevating mechanism 28 that can easily separate the disk-shaped member 21 from the ring-shaped member 22 can be provided.

  The disk-shaped member 21 is preferably a disk having a diameter of 300 to 1000 mm and a thickness of 5 to 30 mm, but is not particularly limited. The radius of the inner circumferential circle of the bearing groove 23 constituting the ring-shaped member 22 is preferably equal to the radius of the disk-shaped member 21 or larger by 0 to 10 mm (excluding the protruding portion). The radial width of the ring of the bearing groove 23 is preferably 10 to 50 mm (excluding the protruding portion), and preferably 5 to 30 mm in thickness. The radius of the inner circumferential circle of the gear portion 24 is preferably 5 to 40 mm (excluding the protruding portion) larger than the radius of the outer circumferential circle of the bearing groove portion 23, and the radial width of the ring of the gear portion 24 is 10 to 50 mm ( It is preferable that the thickness is equal to that of the bearing groove 23. It is preferable that each protrusion protrudes 5 to 30 mm in the radial direction evenly at an arbitrary position and has a thickness of 2 to 15 mm, but is not limited to this size and thickness. The size of the radial gap generated when the bearing groove portion 23 is fitted to the gear portion 24 is more preferably 1 to 10 mm evenly at an arbitrary place, but is not limited to this size. The bearing 17 is preferably spherical with a diameter of 3 to 10 mm. The cross section in the vertical direction of the bearing groove 18 is preferably a semicircle, a triangle, or a quadrangle, but is not particularly limited.

The rotational driving force from the susceptor rotational drive unit 13 is transmitted to the susceptor rotational drive shaft 14 that is rotatably sealed with respect to the reaction vessel 19 using a magnetic fluid seal. The susceptor rotating plate 15 is fixed to the susceptor rotation drive shaft 14 at the tip of the susceptor side, and the gear provided on the outer periphery of the susceptor rotating plate 15 and the gear 25 of the susceptor 3 mesh with each other, so that the rotational driving force is transmitted to the susceptor 3. . Thereby, the susceptor 3 rotates and the substrate holder 2 arranged on the susceptor 3 revolves. It is preferable to always revolve the substrate holder 2 during the vapor phase growth reaction.
The susceptor rotation drive shaft 14 is preferably cylindrical with a diameter of 10 to 50 mm, but is not particularly limited. The susceptor rotating plate 15 preferably has a disk shape with a diameter of 50 to 200 mm and a thickness of 3 to 20 mm, but is not particularly limited. The gear of the susceptor rotating plate 15 and the gear 25 of the susceptor 3 preferably have a spur gear structure, but are not particularly limited.

  The substrate 1 may be rotated by rotation in addition to revolution. The substrate holder 2 is rotatably held on the disk-like member 21 via bearing balls 17 sandwiched by bearing grooves 18 carved on the lower surface of the substrate holder 2 and the upper surface of the disk-like member 21. The rotational driving force from the substrate holder rotation driver 9 is first transmitted to a substrate holder rotation driving shaft 10 that is rotatably sealed with respect to the reaction vessel 19 using a magnetic fluid seal. A plurality of claws 11 are provided at the tip of the substrate holder rotation drive shaft 10 on the substrate holder rotation plate side, and the claws 11 are inserted into an insertion port 29 provided on the upper surface of the substrate holder rotation plate 12. , And the rotational driving force is transmitted to the substrate holder rotating plate 12. The substrate holder rotating plate 12 is rotatably held by the disk-shaped member 21 via bearing balls 17 sandwiched by bearing grooves 18 carved on the lower surface of the substrate holder rotating plate 12 and the upper surface of the disk-shaped member 21. Yes. The substrate holder 2 is provided around the source gas introduction unit 7, and a gear provided on the outer periphery of the substrate holder rotating plate 12 and a gear provided on the outer periphery of each substrate holder 2 mesh with each substrate holder. Rotational driving force is transmitted to 2, and each substrate holder 2 rotates by rotation.

  The substrate holder rotating plate 12 is preferably a disc having a diameter of 100 to 500 mm and a thickness of 3 to 20 mm, but is not particularly limited. The substrate holder rotation drive shaft 10 is preferably a cylindrical shape having a diameter of 10 to 50 mm, but is not particularly limited. The gear of the substrate holder rotating plate 12 and the gear of the substrate holder 2 preferably have a spur gear structure, but are not particularly limited.

  A source gas introduction unit 7 is provided at the center of the reaction furnace 6, and the source gas is blown out radially from the source gas introduction unit 7 and supplied horizontally to the growth surface of the substrate 1. The vapor phase growth reaction is performed by supplying the source gas from the source gas introduction unit 7 while heating the substrate 1 with the heater 5 in the reaction furnace 6, and a crystal film is formed on the growth surface of the substrate 1. . The raw material gas used for the vapor phase growth reaction is directly discharged from the reaction gas discharge unit 8 as a reaction gas. During the vapor phase growth reaction, the substrate holder 2 is preferably constantly revolved by the rotation of the susceptor 3, and more preferably is always rotated and revolved by the rotation of the susceptor 3 and the substrate holder 2. The rotation direction and rotation speed of the susceptor 3 and the substrate holder 2 can be arbitrarily set by changing the rotation direction and rotation speed of the susceptor rotation driver 13 and the substrate holder rotation driver 9, respectively. In order to obtain a uniform film thickness and film quality between the substrates, it is preferable to arrange the substrate holders 2 on the same circumference with respect to the center of the reaction furnace so that the distances from the raw material gas introduction portions are equal. However, it is not particularly limited.

The substrate holder 2, the substrate holder rotating plate 12, the susceptor rotating plate 15, the disk-like member 21 and the ring-like member 22 are preferably carbon materials or carbon materials coated with a ceramic material, but are not particularly limited. The substrate holder rotation drive shaft 10, claw 11 and susceptor rotation drive shaft 14 are preferably a metal, an alloy, a metal oxide, a carbon-based material, a ceramic-based material, a carbon-based material coated with a ceramic material, or a combination thereof. However, it is not particularly limited. The bearing 17 is preferably made of a ceramic material, but is not particularly limited. Here, examples of the alloy include stainless steel and inconel, but are not particularly limited. Examples of the carbon-based material include, but are not particularly limited to, carbon, pyrolytic graphite (PG), and glassy carbon (GC). Examples of the ceramic material include alumina, silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), boron nitride (BN), and the like, but are not particularly limited.

In particular, the substrate holder 2, the substrate holder rotating plate 12, the susceptor rotating plate 15, the disk-like member 21 and the ring-like member 22 are preferably made of SiC-coated carbon, and the bearing 17 is made of alumina. It is preferable that the substrate holder rotation drive side portion is made of Inconel, the substrate holder rotation plate side portion is made of SiC coated carbon, and is integrated by fixing both with a spiral or the like, and the claw 11 is made of SiC coated carbon. Thus, it is preferable that the substrate holder rotation drive shaft is integrally formed in advance on the end surface of the substrate holder rotating plate side portion. The susceptor rotation drive shaft 14 is preferably made of stainless steel.
1 to 7 show an example of the vapor phase growth apparatus of the present invention (face-down type), the present invention can also be applied to a face-up type vapor phase growth apparatus.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by these.

[Example 1]
(Production of vapor phase growth equipment)
A vapor phase growth apparatus as shown in FIGS. 1, 3, and 5 to 7 was manufactured. A disk-shaped member 21 includes eight substrate holders 2 (made of SiC-coated carbon) capable of holding one sapphire substrate having a diameter of 3 inches and a substrate holder rotating plate 12 (made of SiC-coated carbon, diameter 200 mm, thickness 15 mm). (8 pieces of SiC coated carbon, 600 mm diameter, 20 mm thickness, 3 inch substrate can be held) and held through the bearing 17 to engage the spur gear of the substrate holder 2 and the substrate holder rotating plate 12.

  The ring-shaped member 22 is made of SiC-coated carbon, and has a ring-shaped bearing groove with an inner circle diameter of 600 mm (excluding protrusions), an outer circle diameter of 640 mm (excluding protrusions), and a thickness of 20 mm. And a ring-shaped gear portion 24 having a diameter of the inner circumference circle of 680 mm (excluding protrusions), a diameter of the outer circumference circle of 720 mm, and a thickness of 20 mm. In addition, on the upper part of the inner periphery of the gear portion 24, a protruding portion having a diameter of 15 mm and a thickness of 10 mm was equally provided at an arbitrary position. By superimposing the upper surface of the protrusion provided at the lower outer periphery of the bearing groove 23 and the lower surface of the protrusion provided at the upper inner periphery of the gear portion 24, the bearing groove 23 is fitted into the gear portion 24 and the ring-shaped member 22. Formed. At this time, a gap of 5 mm was formed in the radial direction evenly at an arbitrary position between the bearing groove portion 23 and the gear portion 24. Further, twelve through-holes having a diameter of 8 mm are provided in the protruding portion of the gear portion 24 at an angle of 30 °, and a carbon-made spiral 26 having a diameter of 5 mm is passed through the through-hole, and then protruding from the lower outer periphery of the ring-shaped member 23. The gear part 24 was fixed to the bearing groove part 23 by fixing to the spiral hole provided in the part. Further, the susceptor 3 was formed by fitting the disk-shaped member 21 to the ring-shaped member 22 so as to be supported by the protrusion provided at the lower inner periphery of the bearing groove 23.

  The susceptor rotation drive shaft 14 is made of stainless steel having a diameter of 20 mm and a length of 300 mm, and the susceptor rotation plate 15 is made of SiC coated carbon having a diameter of 100 mm and a thickness of 20 mm. Fixed to the tip. The facing surface 4 of the susceptor and the base 20 were made of carbon, and the reaction vessel 19 was made of stainless steel.

(Installation of board)
In the vapor phase growth apparatus manufactured as described above, the disk-shaped member 21 holding the substrate holder 2 was separated from the ring-shaped member 22 using the lifting mechanism 28 and taken out from the reaction vessel 19. The bearing ball 17 between the bearing groove 23 and the gantry 20 is maintained in a sandwiched state, and the meshing of the gear unit 24 is maintained in a meshed state. The substrate 1 (3 inches in diameter, sapphire) is placed on the substrate holder 2, the disk-like member 21 holding the substrate 1 and the substrate holder 2 is fitted to the ring-like member 22 by the lifting mechanism 28, and the susceptor 3 is placed. Formed.

(Vapor phase growth experiment)
Gallium nitride (GaN) was grown on the surface of the substrate 1 using the vapor phase growth apparatus in which the substrate was installed in this manner. First, the substrate holder rotation driver 9 and the susceptor rotation driver 13 were operated to start rotation (10 rpm) and revolution (1 rpm) of the substrate. In addition, the rotation and revolution of the substrate were continued at these speeds until all growth was completed, and the inside of the reaction vessel was kept at atmospheric pressure. Next, the temperature of the substrate was raised to 1050 ° C. while flowing hydrogen from the source gas introduction part, and the substrate was cleaned. Subsequently, the heater temperature is lowered to 510 ° C., and a buffer layer having a thickness of 20 μm made of GaN is grown on the substrate using trimethylgallium (TMG) and ammonia as source gases and hydrogen as a carrier gas. After the growth, the supply of only TMG was stopped and the heater temperature was raised to 1050 ° C. Thereafter, hydrogen and nitrogen were supplied as carrier gases in addition to TMG and ammonia from the source gas introduction part, and undoped GaN was grown for 1 hour.

(Removal of disk-shaped member)
In order to collect the substrate on which GaN has been grown as described above, the disc-like member 21 holding the substrate 1 and the substrate holder 2 is separated from the ring-like member 22 by using the lifting mechanism 28 and the reaction vessel 19 is separated. It was taken out from. The bearing ball 17 between the ring-shaped member 22 and the gantry 20 is maintained in a sandwiched state, and the meshing of the gear portion 24 of the ring-shaped member 22 is maintained in the meshed state. When the substrate 1 was recovered, the growth of GaN was confirmed.
Thus, with the vapor phase growth apparatus of the present invention, the disk-shaped member holding the substrate can be easily detached from the vapor phase growth apparatus and attached to the vapor phase growth apparatus.

  The present invention is suitable as a vapor phase growth apparatus for a thermal CVD method or the like, for example, as a vapor phase growth apparatus of a group III nitride semiconductor used for manufacturing a blue or ultraviolet light emitting diode or laser diode. is there.

Vertical sectional configuration diagram showing an example of a vapor phase growth apparatus of the present invention Partial enlarged view (A part) which shows the structural example of the bearing groove vicinity of the vapor phase growth apparatus shown in FIG. Partial enlarged view (A part) which shows the structural example of the bearing groove vicinity of the vapor phase growth apparatus shown in FIG. Partial enlarged view (A part) which shows the structural example of the bearing groove vicinity of the vapor phase growth apparatus shown in FIG. It is a horizontal section lineblock diagram (section BB) of the vapor phase growth apparatus shown in FIG. It is a horizontal section lineblock diagram (section CC) of the vapor phase growth apparatus shown in FIG. It is a top view which shows an example of the susceptor used for the vapor phase growth apparatus of this invention.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Substrate holder 3 Susceptor 4 Face of susceptor 5 Heater 6 Reaction furnace 7 Raw material gas introduction part 8 Reaction gas discharge part 9 Substrate holder rotation drive 10 Substrate holder rotation drive shaft 11 Claw 12 Substrate holder rotation plate 13 Susceptor rotation drive Reference Signs List 14 susceptor rotation drive shaft 15 susceptor rotation plate 16 heat equalizing plate 17 bearing ball 18 bearing groove 19 reaction vessel 20 mount 21 disc-shaped member 22 ring-shaped member 23 bearing groove portion 24 gear portion 25 gear 26 spiral 27 bellows tube 28 lifting mechanism 29 difference Entrance

Claims (6)

  A vapor phase growth apparatus including a substrate holder that holds a substrate, a susceptor that rotatably holds the substrate holder, and a susceptor holding mechanism that rotatably holds the susceptor, wherein the susceptor holds the substrate holder. A vapor phase growth apparatus comprising a disk-shaped member and a ring-shaped member that can be separated from the disk-shaped member, wherein the ring-shaped member is provided with a part of a susceptor holding mechanism.   The susceptor holding mechanism includes a frame that supports the susceptor, a bearing groove that is provided on the upper surface of the frame, a bearing groove that is provided on the lower surface of the ring-shaped member, and a bearing ball that is sandwiched between the bearing grooves. The vapor phase growth apparatus according to claim 1.   The vapor phase growth apparatus according to claim 1, wherein a part of the susceptor holding mechanism provided on the ring-shaped member is a bearing groove.   2. The vapor phase growth apparatus according to claim 1, wherein the ring-shaped member is provided with a gear for receiving a rotational driving force from outside on the outer periphery, and a bearing groove on the lower surface.   The vapor phase growth apparatus according to claim 4, wherein the gear portion and the bearing groove portion of the ring-shaped member can be separated.   6. The vapor phase growth apparatus according to claim 5, wherein the gear portion of the ring-shaped member and the bearing groove portion are coupled by a spiral.

Images