CN217839101U - Quartz crystal vibration piece deposition monitoring device in OLED production process - Google Patents

Quartz crystal vibration piece deposition monitoring device in OLED production process Download PDF

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CN217839101U
CN217839101U CN202221440567.7U CN202221440567U CN217839101U CN 217839101 U CN217839101 U CN 217839101U CN 202221440567 U CN202221440567 U CN 202221440567U CN 217839101 U CN217839101 U CN 217839101U
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quartz crystal
turntable
opening
rotating shaft
crystal oscillator
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张帆
赵亮
孙浩
刘鹏举
李牧词
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Guangxi Free Trade Zone Ruixian Technology Co ltd
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Guangxi Free Trade Zone Ruixian Technology Co ltd
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Abstract

The utility model discloses a quartz crystal oscillator piece deposition monitoring device in the OLED production process, an opening is arranged on a turntable, the opening ratio W of the turntable is the ratio of the area of the opening to the area of the whole turntable, the center of the turntable is connected with one end of a rotating shaft, and the rotating shaft rotates to drive the turntable to rotate; the initial position sensor is arranged at the other end of the rotating shaft and used for sensing whether the position of the rotating disc is at the initial position or not; a plurality of quartz crystal vibration pieces which are evenly spaced and circumferentially distributed are arranged on the loading disc, and the loading disc is controlled by an external mechanism to rotate; the initial position is that an opening on the turntable is aligned with a quartz crystal oscillation piece on the loading disc, and the quartz crystal oscillation piece is aligned with the opening of the turntable after the loading disc rotates for the interval distance of the quartz crystal oscillation piece. The utility model discloses to the volume production in-process crystal oscillator piece can't in time effectively monitor material coating by vaporization speed, before going to production in advance, unified big speed removes the coating film in advance to avoid the condition of dying in the production process, and shorten the preplating time, improve production efficiency.

Description

Quartz crystal vibration piece deposition monitoring device in OLED production process
Technical Field
The utility model belongs to the technical field of the coating by vaporization monitoring, in particular to quartzy wafer deposit monitoring devices in OLED production process.
Background
The actual evaporation rate of the magnesium material can not be monitored because the magnesium material is deposited on the surface of the quartz crystal oscillation piece to form a film, so that the film thickness of the evaporated magnesium material can not be accurately controlled. Because the magnesium material is difficult to deposit on the quartz crystal oscillating piece, after the quartz crystal oscillating piece is switched, the actual evaporation rate of magnesium cannot be monitored for a long time, so that production is interrupted, the oscillating piece needs to be switched for 11 times in one production period, the production is expected to be stopped for about 11 hours, and the productivity of the organic light-emitting diode product is seriously influenced.
SUMMERY OF THE UTILITY MODEL
Therefore, a technical scheme is needed to be provided, pre-plating of a certain film thickness can be performed on the quartz crystal oscillator piece, film forming deposition on the surface of the quartz crystal oscillator piece is automatically completed at a high speed in a short time before production, the quartz crystal oscillator piece is switched in actual production to ensure normal monitoring of the evaporation rate, accurate control of the evaporation film thickness is ensured, the shutdown time is greatly shortened, and the production capacity is remarkably improved.
In order to achieve the above purpose, the utility model provides a quartz crystal oscillator plate deposition monitoring device in the OLED production process, which comprises an evaporation source, an evaporation substrate, a film thickness monitoring probe, a probe lining and a probe corrugated pipe, wherein the film thickness monitoring probe is internally provided with a turntable, a rotating shaft, an initial position sensor, a loading disc and a quartz crystal oscillator plate,
the turntable is provided with an opening, the opening ratio W of the turntable is the ratio of the area of the opening to the area of the whole turntable, the center of the turntable is connected with one end of a rotating shaft, and the rotating shaft rotates to drive the turntable to rotate;
the initial position sensor is arranged at the other end of the rotating shaft and used for sensing whether the position of the rotating disc is at an initial position or not;
a plurality of quartz crystal vibration pieces which are uniformly arranged at intervals and are distributed circumferentially are arranged on the loading disc, and the loading disc is controlled by an external mechanism to rotate;
the initial position is that an opening on the turntable is aligned with a quartz crystal oscillation piece on the loading disc, and the quartz crystal oscillation piece is aligned with the opening of the turntable after the loading disc rotates for the interval distance of the quartz crystal oscillation piece.
Preferably, one of the openings is provided.
Preferably, the openings are arranged symmetrically two by two.
Preferably, the rotating disc is connected with the rotating shaft through a screw.
Preferably, 12 quartz crystal oscillation plates are arranged.
The beneficial effects of the utility model include at least:
1. the device is additionally provided with a turntable with an opening and an initial position sensor, so that a quartz crystal oscillator wafer is aligned to the opening of the turntable during pre-plating, and the target pre-plating film thickness is quickly pre-plated on the quartz crystal oscillator wafer, thereby greatly shortening the pre-plating time;
2. the opening on the rotary table is optimized, the opening symmetry of the rotary table can be set, the opening ratio of the rotary table is set to 10% on the premise that the service life of the quartz crystal oscillator plate meets the requirement of 144h of a production period, the size of a single opening on the rotary table can completely expose the quartz crystal oscillator plate, the opening of the rotary table is aligned to the quartz crystal oscillator plate, the material quantity on the quartz crystal oscillator plate is 10 times that of the rotary table when the rotary table rotates, the pre-plating time of each quartz crystal oscillator plate is shortened to 1/10 of the original pre-plating time (when the rotary table does not stop rotating, the speed is only the speed
Figure DEST_PATH_GDA0003882932340000021
When the rotating disk stops rotating, the speed reaches
Figure DEST_PATH_GDA0003882932340000022
When the rotating speed of the rotating disc is recovered, the speed is recovered to
Figure DEST_PATH_GDA0003882932340000023
The pre-plating treatment of the quartz crystal oscillator plate corresponding to the magnesium evaporation source at a high speed can be realized without changing the temperature control parameters of the evaporation source, so the utility model can greatly shorten the pre-plating time;
3. the magnesium crystal oscillator wafer pre-plating method has the advantages that the pre-plating function is added, the pre-plating parameters are input, the magnesium crystal oscillator wafer can be subjected to the pre-plating function, the material evaporation rate of the magnesium crystal oscillator wafer cannot be effectively monitored in time in the mass production process, and pre-plating is carried out at a uniform high rate before production, so that downtime in the production process is avoided, the pre-plating time is shortened, and the production efficiency is improved.
Drawings
In order to make the purpose, technical scheme and beneficial effect of the utility model clearer, the utility model provides a following figure explains:
fig. 1 is a schematic overall structure diagram of a quartz crystal oscillator plate deposition monitoring device in an OLED production process according to an embodiment of the present invention;
FIG. 2 is an internal structure diagram of a film thickness detection probe of a quartz crystal oscillator plate deposition monitoring device in the OLED production process according to the embodiment of the present invention;
fig. 3 is a pre-plating rate waveform diagram of a quartz crystal oscillator plate deposition monitoring device in the OLED production process of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention will be made with reference to the accompanying drawings.
Referring to fig. 1 and 2, the quartz crystal oscillator plate deposition monitoring device in the oled production process includes an evaporation source 101, an evaporation substrate 102, a film thickness monitoring probe 105, a probe liner 103 and a probe bellows 106, wherein a turntable 104, a rotating shaft 107, an initial position sensor 113, a loading disc 108 and a quartz crystal oscillator plate 110 are arranged in the film thickness monitoring probe 105, an opening 109 is arranged on the turntable 104, an opening ratio W of the turntable 104 is a ratio of an area of the opening 109 to an area of the entire turntable 104, a center of the turntable 104 is connected with one end of the rotating shaft 107, and the rotating shaft 107 rotates to drive the turntable 104 to rotate; the initial position sensor 113 is arranged at the other end of the rotating shaft 107 and senses whether the position of the turntable 104 is at an initial position; a plurality of quartz crystal oscillating sheets 110 which are uniformly spaced and circumferentially distributed are arranged on the loading disc 108, and the loading disc 108 is controlled by an external mechanism to rotate; the initial position is that an opening 109 on the turntable 104 is aligned with a quartz crystal plate 110 on the loading disc 108, and the quartz crystal plate 110 is aligned with the opening 109 of the turntable 104 after the loading disc 108 rotates for a certain distance of the quartz crystal plate 110. One or two symmetrical openings 109 are provided.
In the embodiment, the turntable 104 is connected to the rotating shaft 107 through a screw 117, and a screw hole 111 is disposed at a corresponding position of the rotating shaft 107. The number of the quartz crystal plates 110 is 12. The vacuum chamber is internally provided with an evaporation source 101, an evaporation substrate 102, a turntable 104 mechanism and a quartz crystal oscillating piece 110 structure in a film thickness monitoring probe 105, and an oscillator and a control device which are positioned outside the vacuum chamber; the evaporation source 101 is used for providing evaporation materials, and M represents a material evaporation path; the evaporation substrate 102 contains a crystal oscillator plate as a coating carrier for adsorbing a coating material to form a film on the surface; the vacuum chamber is a basic film coating environment required by the organic light-emitting diode, so that the material is not damaged by water and oxygen, and the evaporated material is ensured to move along a straight line to reach the substrate to form a film in the moving process; the turntable 104 moving mechanism comprises a turntable 104, a rotating shaft 107, a screw 117 for fixing the turntable 104 and the rotating shaft 107, and a servo motor (for rotating the rotating shaft 107), wherein R represents the rotation of the rotating shaft 107; the quartz crystal oscillation plate 110 converts a physical signal of the evaporation material amount on the quartz crystal oscillation plate into an electric signal, and realizes the control of the evaporation material rate through a control device outside the vacuum chamber.
The working process of the monitoring device is as follows:
setting a target film thickness X and a target pre-plating speed Y, stopping the turntable 104 at an initial position, and aligning an opening 109 of the turntable 104 with a first quartz crystal oscillator wafer 110; starting the evaporation source 101, and pre-plating the quartz crystal oscillation piece 110 leaking from the opening 109; and monitoring that the film thickness of the quartz crystal oscillation piece 110 reaches the target film thickness X, rotating the loading disc 108 to enable the next adjacent quartz crystal oscillation piece 110 to be aligned to the opening 109 of the rotating disc 104, and similarly performing pre-plating in S12 until all the quartz crystal oscillation pieces 110 are pre-plated to the target film thickness X.
A first quartz crystal oscillation piece 110 on the loading disc 108 is aligned with an opening 109 of the turntable 104, the turntable 104 rotates at the rotating speed of 100rpm, the target evaporation rate is Z, and the relation Z/W = Y exists, wherein W is the opening ratio of the turntable 104; and S22, converting a physical signal of the evaporation material on the quartz crystal oscillator piece 110 into an electric signal, and monitoring the real-time evaporation rate.
In a specific embodiment, the target film thickness X is
Figure DEST_PATH_GDA0003882932340000051
Target pre-plating rate Y of
Figure DEST_PATH_GDA0003882932340000052
The aperture ratio W of the turntable 104 is 1/10, and the target evaporation rate Z is
Figure DEST_PATH_GDA0003882932340000053
The aperture ratio of 1/10 indicates that only 1/10 of the material can reach the quartz crystal oscillation piece 110 through the turntable 104, that is, the sum of the areas of the plurality of openings 109 arranged on the turntable 104 is 1/10, and a preferred embodiment is to arrange one or two symmetrical openings 109, so that the turntable 104 stops at the initial position, the material can be completely evaporated onto the quartz crystal oscillation piece 110, and the rate monitored by the quartz crystal oscillation piece 110 is expanded by 10 times when the turntable 104 stops at the initial position; in the pre-plating process, the speed can be kept stable through a speed control mode (the supplied power is continuously finely adjusted under the PID regulation of a monitoring speed value to keep the target speed), and the pre-plating film thickness of each crystal oscillator piece is ensured to be the same; when the pre-plating film thickness reaches the target value, the loading disc 108 controls the rotation to switch to the next quartz crystal oscillator piece 110 for pre-plating
Figure DEST_PATH_GDA0003882932340000054
And so on, completing the surface pre-plating treatment of 12 crystal oscillation plates in sequence; the quartz crystal oscillator piece 110 is finishedAfter S10 pre-plating, the first quartz crystal oscillating piece 110 is switched, the rotating disc 104 rotates at the rotating speed of 100rpm, and the target control speed of the magnesium material is recovered to the target speed in production
Figure DEST_PATH_GDA0003882932340000055
At the moment, the thickness of the magnesium pre-plated film on the surface of each quartz crystal oscillating piece 110 is the same, the pre-plating time is consistent, and the pre-plating time is greatly shortened compared with that in the normal production evaporation rate; before production, magnesium materials with certain thickness are evaporated on the magnesium crystal oscillator plates in advance, and after the crystal oscillator plates are switched in the production process, the rate of the next quartz crystal oscillator plate 110 can be immediately recovered to a normal monitoring level without waiting for a long time, so that the problem of downtime is avoided.
Referring to fig. 3, a waveform diagram of the pre-plating rate in the embodiment is shown, wherein 114 represents a magnesium material evaporation rate display coordinate system, an ordinate evaporation rate, and an abscissa time; 115 represents the rate curve monitored by the 12 quartz crystal plates 110; 116 represents the unmonitored rate of quartz crystal 110 at Δ t times after switching of different quartz crystal 110. After the pre-plating of the 12 quartz crystal oscillating pieces 110 is completed, the first quartz crystal oscillating piece 110 is switched again, the turntable 104 rotates, and the evaporation rate is monitored formally. After pre-plating, the last quartz crystal oscillator piece 110 is switched over, and the speed curve detected by the first quartz crystal oscillator piece 110 is correct, because the pre-plating process is that the turntable 104 stops at the initial position, the quartz crystal oscillator piece 110 can be seen at the opening 109 of the turntable 104 (the initial position sensor is added to the turntable 104 to stop the turntable 104 or the opening 109 of the turntable 104 can expose the quartz crystal oscillator piece 110 when the pre-plating position is adopted), that is, the material can be directly evaporated onto the quartz crystal oscillator piece 110 through the opening 109 of the turntable 104, and when the turntable 104 stops, the material quantity of the material passing through the turntable 104 is 100% (the material rate is that the material is at the initial position)
Figure DEST_PATH_GDA0003882932340000061
) Once the turntable 104 is rotated (the quartz crystal plate 110 is pre-plated), the material passing through the turntable 104 is only 10% (the opening ratio of the turntable 104 is the ratio of the material passing through the turntable 104 to the quartz crystal plate 110), so the first switch is madeAfter crystal oscillation rate is
Figure DEST_PATH_GDA0003882932340000062
The pre-plating time of the turntable 104 stopped during pre-plating can be saved by more than 10 times.
Finally, the above preferred embodiments are only intended to illustrate the technical solution of the invention and not to limit it, while the invention has been described in detail by the above preferred embodiments, it should be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention defined by the claims.

Claims (5)

1. A quartz crystal oscillation piece deposition monitoring device in OLED production process comprises an evaporation source, an evaporation substrate, a film thickness monitoring probe, a probe liner and a probe corrugated pipe, and is characterized in that a turntable, a rotating shaft, an initial position sensor, a loading disc and a quartz crystal oscillation piece are arranged in the film thickness monitoring probe,
the turntable is provided with an opening, the opening ratio W of the turntable is the ratio of the area of the opening to the area of the whole turntable, the center of the turntable is connected with one end of a rotating shaft, and the rotating shaft rotates to drive the turntable to rotate;
the initial position sensor is arranged at the other end of the rotating shaft and used for sensing whether the position of the rotating disc is at an initial position or not;
a plurality of quartz crystal vibration sheets which are uniformly arranged at intervals and are distributed circumferentially are arranged on the loading disc, and the loading disc is controlled by an external mechanism to rotate;
the initial position is that an opening on the turntable is aligned with a quartz crystal oscillation piece on the loading disc, and the quartz crystal oscillation piece is aligned with the opening of the turntable after the loading disc rotates for the interval distance of the quartz crystal oscillation piece.
2. The device for monitoring the deposition of the quartz crystal oscillator plate in the OLED production process is characterized in that one opening is arranged.
3. The device for monitoring deposition of the quartz crystal oscillator plate in the OLED production process is characterized in that two symmetrical openings are arranged.
4. The device for monitoring deposition of the quartz crystal oscillator plate in the OLED production process according to claim 1, wherein the turntable is connected with the rotating shaft through a screw.
5. The device for monitoring the deposition of the quartz crystal oscillator plate in the OLED production process is characterized in that 12 quartz crystal oscillator plates are arranged.
CN202221440567.7U 2022-06-09 2022-06-09 Quartz crystal vibration piece deposition monitoring device in OLED production process Active CN217839101U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221440567.7U CN217839101U (en) 2022-06-09 2022-06-09 Quartz crystal vibration piece deposition monitoring device in OLED production process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221440567.7U CN217839101U (en) 2022-06-09 2022-06-09 Quartz crystal vibration piece deposition monitoring device in OLED production process

Publications (1)

Publication Number Publication Date
CN217839101U true CN217839101U (en) 2022-11-18

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