CN1786655A - Nano Line width sample plate and its preparation method - Google Patents
Nano Line width sample plate and its preparation method Download PDFInfo
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- CN1786655A CN1786655A CN 200510124593 CN200510124593A CN1786655A CN 1786655 A CN1786655 A CN 1786655A CN 200510124593 CN200510124593 CN 200510124593 CN 200510124593 A CN200510124593 A CN 200510124593A CN 1786655 A CN1786655 A CN 1786655A
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Abstract
The invention discloses nanometer line width sample plate and its manufacturing method. It alternately deposits multilayer silicon nitride film and chrome thin film by plasma reinforcement chemical vapor deposition process and radio frequency magnetron sputtering process. The thickness of chrome thin film is equal to line width of nanometer line width sample plate. The silicon slice is scribed, and adopted left holding block and right holding block to deposit. Its section is used as the surface of the nanometer line width sample plate. Epoxy resin is injected into the flute formed by the left-right holding blocks to solidify. Than the multilayer silicon slice section is polished by metallographic abrasive paper and alumina suspending liquid to form nanometer line width sample plate surface.
Description
Technical field
The present invention relates to a kind of precise and tiny measurer, particularly a kind of model of measuring nano-scale linewidth and preparation method thereof.
Background technology
Nano Line width sample plate belongs to precise and tiny measuring technique, can be used for the measurement of nano-scale linewidth and the non real-time of the live width of nanometer metering system is demarcated.In nano-scale linewidth was measured, nano Line width sample plate can provide a live width benchmark, to distinct methods, similar instrument on diverse location, the live width data that obtained of different model and experiment compare; The non real-time of the live width of nanometer metering system is demarcated the non-on-line proving after to wide measurement of institute's survey line of the standard lines Line width sample plate that is meant with known live width size, and the outstanding advantage of this scaling method is that cost is low, and can guarantee certain precision.
The preparation method of nano Line width sample plate can directly adopt corresponding crystalline network; Perhaps adopt Micrometer-Nanometer Processing Technology to be prepared, existing Micrometer-Nanometer Processing Technology comprises as deep UV (ultraviolet light) being optical exposure technology, electron beam exposure technology, ion beam exposure technology, the X ray exposure technique of light source, above-mentioned exposure technology is to the environmental requirement strictness, its level depends on the development of exposure technology, the processing conditions harshness, with high costs.Developed the preparation that also can be used for nano Line width sample plate based on the photoetching technique of scanning probe microscopy in recent years, but low, the poor repeatability of this processes speed.
Summary of the invention
The objective of the invention is, provide a kind of be different from fully existing method, based on nano Line width sample plate of multilayer technique and preparation method thereof, this method is converted to the live width of nano Line width sample plate with film thickness, controls the live width of nano Line width sample plate by the control film thickness.
In order to achieve the above object, the present invention takes following technical scheme to be achieved:
A kind of nano Line width sample plate, comprise symmetrical two grip blocks that connect by bolt assembly, clamping has multilayer film silicon wafer between the grip block of the described left and right sides, and be the surface of nano Line width sample plate with the xsect of this multilayer film silicon wafer, this multilayer film silicon wafer is with respect to being filled with adhesive linkage in the groove between the grip block of the left and right sides.
In above technical scheme, described multilayer film silicon wafer vertically simultaneously is provided with two-layer ceramic film and layer of metal film at least along it, and ceramic membrane and metal film are arranged alternately in order; Described ceramic membrane is a silicon nitride film, and described metal film is the crome metal film.
A kind of preparation method of above-mentioned nano Line width sample plate comprises the steps:
A) at first successively silicon chip is cleaned with acetone, absolute ethyl alcohol, used acetone, absolute ethyl alcohol, deionized water ultrasonic cleaning then successively 2～5 minutes, be to use the deionized water ultrasonic cleaning again 2～5 minutes after 90%～96% sulfuric acid boils with weight concentration then, ultrasonic frequency is 25～28KHz;
B) with plasma reinforced chemical vapour deposition technology ceramic deposition film on silicon chip one side longitudinally;
C) with rf magnetron sputtering technology depositing metallic films on ceramic membrane, and then b set by step) technology on metal film, deposit second layer ceramic membrane;
D) with scribing machine the silicon chip of above-mentioned PROCESS FOR TREATMENT is cut into rectangular multilayer film silicon chip;
E) multilayer film silicon wafer is clamped between the symmetrical grip block that connects with bolt assembly;
F) between left and right grip block, pour into thermoset resin and curing in the formed groove;
G) be the cross section of 3-5 μ m abrasive paper for metallograph polishing multilayer film silicon wafer with granularity, polish this cross section 40-60min, form the surface of nano Line width sample plate at last with 0.1 μ m～0.05 μ m aluminium oxide suspension then.
In above processing step, press the different multilayer film of sequence alternate depositing nano level thickness of metal level-ceramic layer on the described second layer ceramic membrane again; Ceramic membrane can deposit with silicon nitride material; Metal film available metal chromium deposition, wherein the thickness setting of crome metal film is the live width of needed nano Line width sample plate.
The invention has the beneficial effects as follows, owing to adopt the film preparing technology in the microelectronics industry on silicon chip, to replace deposit multilayer ceramic membrane and crome metal film, with surface, the cross section of multilayer film as nano Line width sample plate, and with the thickness of crome metal film live width, thereby realize film thickness is converted to the nano-scale linewidth of a plurality of series standards as nano Line width sample plate; In addition, again because thin film preparation process is easy to realize the crome metal film of tens nano thickness, therefore can realize the live width of control nanometer model by the thickness of control crome metal film, make that nano Line width sample plate preparation technology of the present invention is simple and easy relatively, processing cost obviously reduces low.
Nano Line width sample plate of the present invention can be widely used in precise and tiny fields of measurement such as semiconductor, flat-panel screens, high-density storage, exact instrument and precision optical machinery, ultraprecise processing.
Description of drawings
Fig. 1 is the structural drawing of nano Line width sample plate of the present invention, and wherein (a) is positive view, (b) is sectional view, (c) is vertical view.
Fig. 2 is a multilayer film silicon wafer cross section B partial enlarged drawing among Fig. 1 (c).
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples:
As shown in Figure 1 and Figure 2, a kind of nano Line width sample plate, comprise the symmetrical grip block 13 and the grip block 15 that connect by bolt assembly 12, clamping has multilayer film silicon wafer 11 between grip block 13 and the grip block 15, and this multilayer film silicon wafer 11 is with respect to being filled with adhesive linkage 14 in the groove between the grip block of the left and right sides 17.
Described multilayer film silicon wafer 11 vertically simultaneously 16 is provided with the silicon nitride film 20,22,24 and 26 that four layer thicknesses are 0.3 μ m along it, and thickness is respectively the crome metal film 21,23 and 25 of 20nm, 40nm, 60nm; Silicon nitride film 20,22,24,26 and crome metal film 21,23,25 are arranged alternately, and are the surface of nano Line width sample plate with the xsect 10 of this multilayer film silicon wafer.
The preparation method of above-mentioned nano Line width sample plate comprises the steps:
A) at first silicon chip 19 is cleaned with acetone, absolute ethyl alcohol successively, used acetone, absolute ethyl alcohol, deionized water ultrasonic cleaning then successively 2-3 minute; Be after 96% sulfuric acid solution boils silicon chip 2-3 minute, to use the deionized water ultrasonic cleaning again 2-3 minute with weight concentration then, ultrasonic frequency is 28KHz;
B) adopting plasma reinforced chemical vapour deposition technology deposit thickness on the one side of silicon chip 19 is the ground floor silicon nitride film 20 of 0.3 μ m, deposition process is carried out on PECVD-2B type plasma chemistry gas-phase injection board, reacting gas is the silane mixture gas of nitrogen dilution, the volume ratio that silane accounts for mixed gas is 1.8～2.0%, and feed purity greater than the 99.99wt% ammonia, its flow is 30 ± 5sccm, main technologic parameters is, standard radio frequency frequency 13.56MHz, underlayer temperature is 300 ℃ ± 10 ℃, and radio-frequency power is 60 ± 20W;
C) adopting rf magnetron sputtering technology deposit thickness on ground floor silicon nitride film 20 is the ground floor crome metal film 21 of 20nm, deposition process is carried out on JS-3X-80 type rf magnetron sputtering board, sputtering target material is a crome metal, main technologic parameters is: working gas is an argon gas, underlayer temperature is a room temperature during sputter, operating air pressure is 1.0 handkerchiefs, and radio-frequency power is 120W;
Repeating step b) and step c), on ground floor crome metal film 21 successively alternating deposit thickness be that second layer silicon nitride film 22, the thickness of 0.3 μ m is that 40nm second layer metal chromium film 23, thickness are that the 3rd layer of silicon nitride film 24, the thickness of 0.3 μ m is that 60nm three-layer metal chromium film 25, thickness are the 4th layer of silicon nitride film 26 of 0.3 μ m;
D) adopt scribing machine the silicon chip 19 of above-mentioned PROCESS FOR TREATMENT not the another side of deposit film be cut to rectangular multilayer film silicon chip 11;
E) multilayer film silicon wafer 11 is clamped between the symmetrical grip block 13,15 that connects with bolt assembly 12; Left and right sides grip block is made by the vinyl chloride rigid plastic;
F) injection ring epoxy resins 14 in left grip block 13 and right grip block 15 formed grooves 17 was at room temperature solidified 2 days;
G) be that the abrasive paper for metallograph of 3-5 μ m is polished and deposited the cross section 10 of multilayer film silicon wafer 11 with granularity earlier, the polishing time is 40-60min; Then, be that polish in the aluminium oxide suspension of 0.1 μ m and the 0.05 μ m cross section 10 of multilayer film silicon wafer 11 after to polishing with granularity successively, polishing time is 40-60min, forms the surface of nano Line width sample plate at last.
Claims (6)
1, a kind of nano Line width sample plate, comprise the symmetrical left grip block (13) and the right grip block (15) that connect by bolt assembly (12), it is characterized in that, clamping has multilayer film silicon wafer (11) between described left grip block (13) and the right grip block (15), and be the surface of nano Line width sample plate with the xsect (10) of this multilayer film silicon wafer (11), multilayer film silicon wafer (11) is with respect to being filled with adhesive linkage (14) in the groove between left and right grip block (17).
2, nano Line width sample plate according to claim 1, it is characterized in that, described multilayer film silicon wafer (11) is provided with two-layer ceramic film (20), (22) and layer of metal film (21) at least along its vertical one side (16), and described ceramic membrane (20), metal film (21), ceramic membrane (22) are arranged alternately in order.
3. nano Line width sample plate according to claim 1 and 2 is characterized in that, described dielectric film (20), (22) are silicon nitride films, and described metal film (21) is the crome metal film.
4, a kind of preparation method of nano Line width sample plate according to claim 1 is characterized in that, it comprises the steps:
A) at first silicon chip (19) is cleaned with acetone, absolute ethyl alcohol successively, used acetone, absolute ethyl alcohol, deionized water ultrasonic cleaning then successively 2～5 minutes, be to use the deionized water ultrasonic cleaning again 2～5 minutes after 90%～96% sulfuric acid boils with weight concentration then, ultrasonic frequency is 25～28KHz;
B) with plasma reinforced chemical vapour deposition technology ceramic deposition film (20) on the one side of silicon chip (19);
C) go up depositing metallic films (21) with rf magnetron sputtering technology at ceramic membrane (20), and then b set by step) technology go up deposition second layer ceramic membrane (22) in metal film (21);
D) with scribing machine the silicon chip (19) of above-mentioned PROCESS FOR TREATMENT is cut into rectangular multilayer film silicon chip (11):
E) multilayer film silicon wafer (11) is clamped between the symmetrical grip block (13) that connects with bolt assembly (12), (15);
F) in left and right grip block (13), (15) formed groove (17), pour into thermoset resin (14) and curing;
G) be the cross section (10) of the abrasive paper for metallograph polishing multilayer film silicon wafer (11) of 3-5 μ m with granularity, the aluminium oxide suspension with 0.1 μ m～0.05 μ m polishes this cross section (10) 80～120min then, forms the surface of nano Line width sample plate at last.
5. the preparation method of nano Line width sample plate according to claim 4 is characterized in that, presses the different multilayer film of sequence alternate depositing nano level thickness of metal level-ceramic layer on the described second layer ceramic membrane (22) again.
6. according to the preparation method of claim 4 or 5 described nano Line width sample plates, it is characterized in that the silicon nitride material deposition is used in described ceramic membrane (20), (22); Described metal film (21) uses the crome metal deposition, and wherein the thickness setting of crome metal film (21) is the live width of needed nano Line width sample plate.
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| CNB2005101245933A CN100370216C (en) | 2005-12-20 | 2005-12-20 | Nano Line width sample plate and its preparation method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100408970C (en) * | 2006-06-30 | 2008-08-06 | 西安交通大学 | Nano multi-step height sample plate and its preparation |
| CN102200423A (en) * | 2011-02-21 | 2011-09-28 | 刘汉平 | 8sigma standard steel sheet used for production of steel sheets with improved thickness evenness and production method thereof |
| CN105480940A (en) * | 2015-12-08 | 2016-04-13 | 中国航空工业集团公司北京长城计量测试技术研究所 | Three-dimensional nanometer pitch sample plate and preparation method thereof |
| CN110306168A (en) * | 2019-07-02 | 2019-10-08 | 西安交通大学 | A kind of controllable periodic nanometer line width template of characteristic size and preparation method thereof |
| CN110530313A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | One kind is across multiple dimensioned line width standard of magnitude and preparation method thereof |
| CN113532348A (en) * | 2021-07-13 | 2021-10-22 | 西安交通大学 | Single line width sample plate structure with magnitude of 22nm and below and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252835A (en) * | 1992-07-17 | 1993-10-12 | President And Trustees Of Harvard College | Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale |
| JP4523302B2 (en) * | 2004-03-08 | 2010-08-11 | 大研化学工業株式会社 | Processing method using focused ion beam, nanotube probe, microscope apparatus, and electron gun |
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2005
- 2005-12-20 CN CNB2005101245933A patent/CN100370216C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100408970C (en) * | 2006-06-30 | 2008-08-06 | 西安交通大学 | Nano multi-step height sample plate and its preparation |
| CN102200423A (en) * | 2011-02-21 | 2011-09-28 | 刘汉平 | 8sigma standard steel sheet used for production of steel sheets with improved thickness evenness and production method thereof |
| CN102200423B (en) * | 2011-02-21 | 2012-10-03 | 刘汉平 | 8sigma standard steel sheet used for production of steel sheets with improved thickness evenness and production method thereof |
| CN105480940A (en) * | 2015-12-08 | 2016-04-13 | 中国航空工业集团公司北京长城计量测试技术研究所 | Three-dimensional nanometer pitch sample plate and preparation method thereof |
| CN105480940B (en) * | 2015-12-08 | 2017-03-29 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of three-dimensional manometer pitch templet and preparation method thereof |
| CN110306168A (en) * | 2019-07-02 | 2019-10-08 | 西安交通大学 | A kind of controllable periodic nanometer line width template of characteristic size and preparation method thereof |
| CN110306168B (en) * | 2019-07-02 | 2021-01-19 | 西安交通大学 | Characteristic dimension adjustable periodic nano line width sample plate and preparation method thereof |
| CN110530313A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | One kind is across multiple dimensioned line width standard of magnitude and preparation method thereof |
| CN113532348A (en) * | 2021-07-13 | 2021-10-22 | 西安交通大学 | Single line width sample plate structure with magnitude of 22nm and below and preparation method thereof |
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| CN100370216C (en) | 2008-02-20 |
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