CN1884964A - Nano pitch templet and preparation method thereof - Google Patents
Nano pitch templet and preparation method thereof Download PDFInfo
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- CN1884964A CN1884964A CNA2006100430787A CN200610043078A CN1884964A CN 1884964 A CN1884964 A CN 1884964A CN A2006100430787 A CNA2006100430787 A CN A2006100430787A CN 200610043078 A CN200610043078 A CN 200610043078A CN 1884964 A CN1884964 A CN 1884964A
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Abstract
The invention relates to a nanometer pitch copy and relative preparing method. First, the plasma enhancing chemical vapor deposition (CVD) craft and the radio-frequency magnetron sputtering craft alternating deposit multiple Si3N4 film and Cr film on the silicon chip; second, scribing the silicon chip and jointing their surfaces that deposited with multi-ply film face-to-face; third, clamping the silicon chips by right and left grip blocks, to make the sections of silicon chips with multiple films as the surface of nanometer pitch copy; then, injecting epoxies resin into the groove formed by right and left grip blocks and solidifying it; at last, using metallographic paper and alumina suspension to sand, buffer, and clean said sections in turn to form a nanometer pitch copy surface to obtain the nanometer pitch copy with required nominal value.
Description
Technical field
The invention belongs to micro-nano measuring technology, particularly a kind of nanometer pitch templet that is used for that nano pitch is measured and the non real-time of nanometer metering system pitch is demarcated and preparation method thereof.
Background technology
Nanometer pitch templet and preparation method thereof belongs to micro-nano technical field of measurement and test, is widely used in semiconductor, flat-panel screens, high-density storage, exact instrument and precision optical machinery, ultraprecise processing and other fields.Nanometer pitch templet can be used for the measurement and the control of micro-nano live width and pitch, and the calibration of relevant nano measurement instrument with trace to the source etc.In nano pitch and wire width measuring, nanometer pitch templet can provide the nano pitch benchmark, can compare to distinct methods, the different instrument pitch data that obtained on diverse location, in different model and the experiment by this benchmark.The demarcation of pitch and live width generally adopts non real-time to demarcate in the nanometer metering system, the non real-time demarcation is the demarcation after with the pitch templet of known pitch and live width size the survey pitch being measured, the outstanding advantage of this scaling method is that cost is low, and can guarantee certain precision.
Nanometer pitch templet generally is prepared with Micrometer-Nanometer Processing Technology, perhaps directly adopts corresponding crystalline network.With the nanometer pitch templet of Micrometer-Nanometer Processing Technology preparation, its level depends on the development of plate-making technology, figure transfer technology, lithographic technique etc., and these technology are to the environmental requirement strictness, and the processing conditions harshness is with high costs.Developed the preparation that also can be used for nanometer pitch templet based on the photoetching technique of scanning probe microscopy in recent years, but low, the poor repeatability of this processes speed.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of preparation technology simple, not only be suitable for contactless nano measurement instruments such as scanning electron microscope measurement, calibrate and trace to the source, also be applicable to contact type nanometer surveying instruments such as scanning probe microscopy measurement, calibrate and the nanometer pitch templet of tracing to the source and preparation method thereof.
For achieving the above object, nanometer pitch templet of the present invention is: comprise that the alternating deposit that fits tightly face-to-face has multilayer Si
3N
4Two silicon chips of film and Cr film, above-mentioned two silicon chips also are provided with epoxy resin by left grip block and right grip block clamping in left and right grip block groove.
Preparation method of the present invention is: 1) silicon chip is immersed successively toluene, acetone, deionized water for ultrasonic ripple and cleaned 10 minutes, all clean repeatedly with a large amount of deionized waters behind each ultrasonic washing, dry up with nitrogen at last; Then silicon chip is put into Piranha solution and handled 60 minutes for 80 ℃, with a large amount of fully flushings of deionized water, high pure nitrogen dries up after taking out; It is that 4: 1 mass concentration is 98% sulfuric acid and 30% hydrogen peroxide that Piranha solution contains volume ratio;
2) adopt rf magnetron sputtering technology and plasma reinforced chemical vapour deposition technology at an alternating deposit multi-layer C of silicon chip r film and Si
3N
4Film, wherein the distance between the center line of two adjacent Cr film thicknesses equals the pitch of needed nanometer pitch templet;
3) adopt scribing machine in not scribing on the surface of deposit film of silicon chip (11,12), obtain section and have multi-layer C r film and Si
3N
4The silicon chip of film;
4) fit tightly and adopt left grip block (13), right grip block (16) and screw (14) clamping utilization to deposit multilayer film face-to-face two silicon chips (11,12) that deposit multilayer film after the scribing and the silicon chip cross section that fits tightly face-to-face as the surface of nanometer pitch templet; Said left and right grip block (13,16) is a rigid plastic of polyvinyl chloride;
5) injection ring epoxy resins in left grip block and the formed groove of right grip block, and make it to solidify;
6) the silicon chip cross section that deposits multilayer film and fit tightly face-to-face with the abrasive paper for metallograph polishing is then polished the surface that the back forms nanometer pitch templet with the aluminium oxide suspension to the silicon chip cross section that deposits multilayer film and fit tightly face-to-face.
The present invention is based on nanometer pitch templet of multilayer film technology of preparing and preparation method thereof, and film thickness is converted to the pitch of nanometer pitch templet, controls the nominal pitch of nanometer pitch templet by the control film thickness; Form the nanometer pitch templet structure because the present invention fits tightly two silicon chips that deposit multilayer film face-to-face in addition, thus this nanometer pitch templet not only be suitable for contactless nano measurement instruments such as scanning electron microscope measurement, calibrate and trace to the source; More be applicable to contact type nanometer surveying instruments such as scanning probe microscopy measurement, calibrate and trace to the source, both prepared the littler nanometer pitch templet of nominal pitch, also widened the usable range of this model.
Description of drawings
Fig. 1 is the wiring layout of nanometer pitch templet of the present invention;
Fig. 2 is silicon chip 11 and the silicon chip 12 cross section enlarged drawings that deposit multilayer film of the present invention;
Fig. 3 is the cross section enlarged drawing of silicon chip that deposits multilayer film and fit tightly face-to-face 11 of the present invention and silicon chip 12.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
Embodiment
Referring to Fig. 1, nanometer pitch templet of the present invention comprises that two alternating deposits have multilayer Si
3N
4The silicon chip of film and Cr film (11,12), left and right grip block (13,16) that is used for the clamping silicon chip and the screw (14) that is connected left and right grip block (13,16) and the epoxy resin (15) that solidifies in left and right grip block (13,16) groove are formed.
Preparation method of the present invention is as follows:
Referring to Fig. 2, Fig. 3,1) silicon chip is immersed toluene, acetone, deionized water for ultrasonic ripple successively cleaned 10 minutes, all clean repeatedly behind each ultrasonic washing with a large amount of deionized waters, dry up with nitrogen at last; Then silicon chip is put into Piranha solution and handled 60 minutes for 80 ℃, with a large amount of fully flushings of deionized water, high pure nitrogen dries up after taking out; It is that 4: 1 mass concentration is 98% sulfuric acid and 30% hydrogen peroxide that Piranha solution contains volume ratio;
2) adopt rf magnetron sputtering technology to prepare the ground floor Cr film that thickness is 15nm on two silicon chips, working gas is an argon gas, and underlayer temperature is a room temperature during sputter, and operating air pressure is 1.0 handkerchiefs, and radio-frequency power is 120W.
3) adopting plasma reinforced chemical vapour deposition technology deposit thickness on the ground floor Cr of two silicon chips film is the ground floor Si of 10nm
3N
4Film, reacting gas is silane and high-purity ammonia with nitrogen dilution, and the flow of ammonia is 30 ± 5sccm, and rf frequency 13.56MHz, underlayer temperature are 300 ℃ ± 10 ℃, radio-frequency power 60 ± 20W.
4) adopt and step 2) same process is at the ground floor Si at two silicon chips
3N
4Preparing thickness on the film simultaneously is the second layer Cr film of 15nm.
5) adopt the technology identical at deposition second layer Si on the second layer Cr of two silicon chips film with step 3)
3N
4Film, thickness are 10nm.
6) repeating step 2) at second layer Si at two silicon chips
3N
4On the film simultaneously deposit thickness be the 3rd layer of Cr film of 15nm.
7) repeating step 3) the 3rd layer of Si of deposition on the 3rd layer of Cr film of two silicon chips
3N
4Film, thickness are 10nm.
8) repeating step 2) at the 3rd layer of Si of two silicon chips
3N
4On the film simultaneously deposit thickness be the 4th layer of Cr film of 15nm.
9) repeating step 3) the 4th layer of Si of deposition on the 4th layer of Cr film of two silicon chips
3N
4Film, thickness are 10nm.
10) repeating step 2) at the 4th layer of Si of two silicon chips
3N
4On the film simultaneously deposit thickness be the layer 5 Cr film of 15nm.
11) repeating step 3) deposition layer 5 Si on the layer 5 Cr film on a slice silicon chip in above-mentioned two silicon chips
3N
4Film, thickness 10nm.
12) adopt scribing machine in not scribing on the surface of deposit film of silicon chip (11,12), obtain section and have multi-layer C r film and Si
3N
4The silicon chip of film;
13) adopt two silicon chips (11,12) that deposit multilayer film that obtain after left and right grip block 13,16 and the screw 14 clamping scribings, wherein the opposite, deposit film one side of two silicon chips fits tightly, and the material of left grip block and right grip block is a rigid plastic of polyvinyl chloride.
14) injection ring epoxy resins in left grip block 13 and right grip block 16 formed grooves, cured epoxy resin at room temperature, be 2 days set time.
15) adopting earlier granularity is the cross section that the abrasive paper for metallograph polishing of 3-5 μ m deposits two silicon chips of multilayer film, and the polishing time is 40-60min; Adopting granularity then successively is the cross section that 0.1 μ m and the polishing of 0.05 μ m aluminium oxide suspension deposit two silicon chips of multilayer film, and polishing time all is 40-60min, forms the surface of nanometer pitch templet at last.
The present invention adopts in the microelectronics industry thin film preparation process deposit multilayer Si alternately on silicon chip
3N
4Film and Cr film, and this silicon chip carried out scribing; There is the silicon chip surface of multilayer film to fit tightly face-to-face two alternating deposits and fastening in addition; With surface, the cross section of two silicon chip institute constituent components fitting tightly face-to-face as nanometer pitch templet, wherein the distance between the two adjacent Cr film thickness center lines is as the nominal pitch of nanometer pitch templet, thereby realizes film thickness is converted to the pitch of nanometer pitch templet.
The present invention is the pitch that the thickness of Cr film is converted to nanometer pitch templet, therefore can realize the pitch of control nanometer model by the distance between the center line of control two adjacent Cr film thicknesses; Thin film preparation process is easy to realize the Cr film and the Si of 10nm magnitude thickness in addition
3N
4The preparation of film, therefore, the design of this nanometer pitch templet has reduced the preparation difficulty of nanometer pitch templet; In addition, because the thin film preparation process selection is extensive, thereby increased the diversity that the nanometer pitch templet material is selected; At last, because this nanometer pitch templet figure fits tightly between the silicon chip at two face-to-face, through behind the selective etch, not only be suitable for contactless nano measurement instruments such as scanning electron microscope measurement, calibrate and trace to the source, also be applicable to contact type nanometer surveying instruments such as scanning probe microscopy measurement, calibrate and trace to the source.
Claims (2)
1, a kind of nanometer pitch templet is characterized in that: comprise that the alternating deposit that fits tightly face-to-face has multilayer Si
3N
4Two silicon chips (11,12) of film and Cr film, above-mentioned two silicon chips (11,12) also are provided with epoxy resin (15) by left grip block (13) and right grip block (16) clamping in left and right grip block (13,16) groove.
2, a kind of preparation method of nanometer pitch templet is characterized in that:
Comprise the steps:
1) silicon chip is immersed successively toluene, acetone, deionized water for ultrasonic ripple and cleaned 10 minutes, all clean repeatedly behind each ultrasonic washing, dry up with nitrogen at last with a large amount of deionized waters; Then silicon chip is put into Piranha solution and handled 60 minutes for 80 ℃, with a large amount of fully flushings of deionized water, high pure nitrogen dries up after taking out; It is that 4: 1 mass concentration is 98% sulfuric acid and 30% hydrogen peroxide that Piranha solution contains volume ratio;
2) adopt rf magnetron sputtering technology and plasma reinforced chemical vapour deposition technology at alternating deposit multi-layer C r film of silicon chip (11,12) and Si
3N
4Film, wherein the distance between the center line of two adjacent Cr film thicknesses equals the pitch of needed nanometer pitch templet;
3) adopt scribing machine in not scribing on the surface of deposit film of silicon chip (11,12), obtain section and have multi-layer C r film and Si
3N
4The silicon chip of film;
4) fit tightly and adopt left grip block (13), right grip block (16) and screw (14) clamping utilization to deposit multilayer film face-to-face two silicon chips (11,12) that deposit multilayer film that obtain after the scribing and the silicon chip cross section that fits tightly face-to-face as the surface of nanometer pitch templet; Said left and right grip block (13,16) is a rigid plastic of polyvinyl chloride;
5) injection ring epoxy resins (15) in left grip block (13) and the formed groove of right grip block (16), and make it to solidify;
6) the silicon chip cross section that deposits multilayer film and fit tightly face-to-face with the abrasive paper for metallograph polishing is then polished the surface that the back forms nanometer pitch templet with the aluminium oxide suspension to the silicon chip cross section that deposits multilayer film and fit tightly face-to-face.
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|---|---|---|---|
| CNA2006100430787A CN1884964A (en) | 2006-06-30 | 2006-06-30 | Nano pitch templet and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100430787A CN1884964A (en) | 2006-06-30 | 2006-06-30 | Nano pitch templet and preparation method thereof |
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| CN1884964A true CN1884964A (en) | 2006-12-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104266595A (en) * | 2014-09-29 | 2015-01-07 | 宁波金田新材料有限公司 | Microscopic detection method for paint film thickness of enameled wire |
| CN105480940A (en) * | 2015-12-08 | 2016-04-13 | 中国航空工业集团公司北京长城计量测试技术研究所 | Three-dimensional nanometer pitch sample plate and preparation method thereof |
| CN105865389A (en) * | 2016-06-08 | 2016-08-17 | 上海市计量测试技术研究院 | Micro-nanometer standard sample plate and tracking method thereof |
| CN110306168A (en) * | 2019-07-02 | 2019-10-08 | 西安交通大学 | A kind of controllable periodic nanometer line width template of characteristic size and preparation method thereof |
| CN110530313A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | One kind is across multiple dimensioned line width standard of magnitude and preparation method thereof |
-
2006
- 2006-06-30 CN CNA2006100430787A patent/CN1884964A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104266595A (en) * | 2014-09-29 | 2015-01-07 | 宁波金田新材料有限公司 | Microscopic detection method for paint film thickness of enameled wire |
| CN105480940A (en) * | 2015-12-08 | 2016-04-13 | 中国航空工业集团公司北京长城计量测试技术研究所 | Three-dimensional nanometer pitch sample plate and preparation method thereof |
| CN105480940B (en) * | 2015-12-08 | 2017-03-29 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of three-dimensional manometer pitch templet and preparation method thereof |
| CN105865389A (en) * | 2016-06-08 | 2016-08-17 | 上海市计量测试技术研究院 | Micro-nanometer standard sample plate and tracking method thereof |
| CN105865389B (en) * | 2016-06-08 | 2018-11-02 | 上海市计量测试技术研究院 | A kind of micro-and nanoscale standard and its tracking method |
| CN110306168A (en) * | 2019-07-02 | 2019-10-08 | 西安交通大学 | A kind of controllable periodic nanometer line width template of characteristic size and preparation method thereof |
| CN110306168B (en) * | 2019-07-02 | 2021-01-19 | 西安交通大学 | Characteristic dimension adjustable periodic nano line width sample plate and preparation method thereof |
| CN110530313A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | One kind is across multiple dimensioned line width standard of magnitude and preparation method thereof |
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