KR20200026047A - Film forming apparatus and control method thereof - Google Patents

Abstract

Provided is a film forming apparatus and a control method of the film forming apparatus. The present invention aims to provide a technology for precisely and simply checking a situation of a film forming apparatus to control film formation. According to the present invention, a film is formed by rate control which controls the amount of power supplied to a heating source by a heating control unit to maintain the rate of the film acquired by an acquisition unit at a predetermined value. When the rate of the film acquired by the acquisition unit exceeds a predetermined threshold, the rate control is switched into power control which allows the heating control unit to supply the heating source with the amount of power set without depending on the rate of the film acquired by the acquisition unit, such that the film is formed. During such power control, the state of the film forming apparatus is determined based on the variance of an oscillation frequency of a quartz vibrator in a predetermined period when a rotation control unit changes the rotational speed of a rotational body to change the duration of a period while a non-closed state is maintained in the predetermined period.

Description

FILM FORMING APPARATUS AND CONTROL METHOD THEREOF

The present invention relates to a film forming apparatus for forming a thin film on a film forming object by a vacuum deposition method and a control method thereof.

A film forming apparatus for forming a thin film on a substrate as a film forming object, in which a container (a crucible) containing a film forming material is heated in a vacuum chamber, and the film forming material is evaporated (sublimed or vaporized) to be sprayed out of the container, and the surface of the substrate There exists a film-forming apparatus of the vacuum vapor deposition system which adheres and deposits on the. In such a film forming apparatus, a device configuration is known in which a film forming rate is acquired by using a monitor unit disposed in a vacuum chamber so as to obtain a desired film thickness, and fed back to the heating control of the container. The monitor unit is provided with a crystal oscillator, and the film formation rate is obtained based on the change in the natural frequency of the crystal oscillator due to the deposition of the film formation material. If the deposition amount of the deposition material on the crystal oscillator is excessively increased, a change in the deposition amount does not appear exactly as a change in the natural frequency, and thus replacement with a new crystal oscillator is necessary.

Here, the deposition amount of the film forming material to the crystal oscillator does not always become stable when the heating is constantly controlled. For example, the deposition amount of the film forming material may suddenly change due to the dolby of the film forming material. Such unexpected fluctuations in the deposition amount of the film forming material may deviate from the actual film forming amount on the substrate and the monitor value, and may miss the appropriate replacement timing of the crystal oscillator, leading to a decrease in the monitor accuracy of the film forming rate. There is concern. Patent Literature 1 discloses a configuration that detects the presence or absence of undesired splashes caused by the dolby of the evaporation raw material in the crucible by comparing the monitor value with a preset reference value.

However, the change in the monitor value may be caused by a defect or failure of the monitor unit, and it may not be easy to identify the cause immediately from the monitor value. Moreover, the monitor unit arrange | positioned in a vacuum chamber is not easy to confirm the operation state directly, and generation | occurrence | production of such a confirmation operation has a big influence on a manufacturing tact.

Japanese Patent Publication No. 2006-45581

An object of the present invention is to provide a technique which enables the film formation control by grasping the situation of an apparatus more accurately and simply.

In order to achieve the above object, the film forming apparatus of the present invention,

A chamber for receiving the film forming object,

A heating control section for controlling electric power to be supplied to a heating source for heating the film formation material contained in the container disposed in the chamber;

A monitor unit for detecting the deposition rate of the deposition material on the deposition object, disposed in the chamber, comprising: a monitor unit having a crystal vibrator, a shielding portion and an opening, and a rotating body disposed between the crystal vibrator and the container and,

The rotation of the rotating body is controlled so that the shielding part can take any one of a shielding state located between the container and the crystal oscillator and an unshielded state located between the container and the crystal oscillator. With a rotation control unit,

An acquisition unit for acquiring the film formation rate based on a change in the resonance frequency of the crystal oscillator;

Equipped with

A film forming apparatus for forming a film by the film forming material on the film forming object,

In a state in which the heating control unit keeps the power supplied to the heating source constant, the rotation control unit causes the rotational speed of the rotating body to be varied so that the length of the non-shielding period in a predetermined period is changed. And a state determining unit that determines the state of the film forming apparatus on the basis of the change in the variation amount of the resonance frequency in the predetermined period at the time.

In order to achieve the above object, the control method of the film forming apparatus of the present invention,

A chamber for receiving the film forming object,

A heating control section for controlling electric power to be supplied to a heating source for heating the film formation material contained in the container disposed in the chamber;

A monitor unit for detecting the deposition rate of the deposition material on the deposition object, disposed in the chamber, comprising: a monitor unit having a crystal vibrator, a shielding portion and an opening, and a rotating body disposed between the crystal vibrator and the container and,

The rotation of the rotating body is controlled so that the shielding part can take any one of a shielding state located between the container and the crystal oscillator and an unshielded state located between the container and the crystal oscillator. With a rotation control unit,

An acquisition unit for acquiring the film formation rate based on a change in the resonance frequency of the crystal oscillator;

Equipped with

In the control method of the film-forming apparatus which forms a film | membrane by the said film-forming material into the said film-forming object,

A first step of performing the film formation by a rate control in which the heating control part controls the amount of power so that the film forming rate acquired by the acquisition unit is maintained at a predetermined value;

When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the control unit switches from the rate control to power control supplied by the heating control unit with the amount of power set regardless of the deposition rate acquired by the acquisition unit. A second step of performing the film formation;

A third step of causing the rotation control unit to change the rotational speed of the rotating body so that the length of the period of the non-shielding state in the predetermined period is changed between the second steps;

A fourth step of determining the state of the film forming apparatus based on a change in the amount of change in the resonance frequency in the predetermined period when the rotational speed is changed in the third step,

Characterized in that it comprises a.

According to the present invention, it is possible to more accurately and easily grasp the situation of the apparatus and to perform film formation control.

BRIEF DESCRIPTION OF THE DRAWINGS Typical sectional drawing of the film-forming apparatus in the Example of this invention.
2 is a schematic diagram showing the configuration of a film formation rate monitor apparatus in an embodiment of the present invention.
Fig. 3 is a schematic diagram showing the configuration of a quartz monitor head and a shield member in the embodiment of the present invention.
4 is a flowchart of power supply control to a heater in an embodiment of the present invention.
5 is an explanatory diagram of rotation control of a shielding member in an embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment and Example of this invention are described, referring drawings. However, the following embodiment and examples are only illustrative of the preferable structure of this invention, and the scope of the present invention is not limited to such a structure. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are intended to limit the scope of the present invention only as such unless otherwise specified. It is not one of

Example 1

With reference to FIGS. 1-5, the film-forming rate monitor apparatus and film-forming apparatus which concern on the Example of this invention are demonstrated. The film-forming apparatus which concerns on a present Example is a film-forming apparatus which forms a thin film on a board | substrate by vacuum vapor deposition. The film forming apparatus according to the present embodiment includes a thin film on a substrate (including a laminate formed on the substrate) in the manufacture of various electronic devices such as various semiconductor devices, magnetic devices, electronic components, and optical components. It is used to form a deposit. More specifically, the film forming apparatus according to the present embodiment is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Especially, the film-forming apparatus which concerns on a present Example is applicable especially suitably in manufacture of organic light emitting elements, such as an organic EL (Erectro Luminescence) element, and organic photoelectric conversion elements, such as an organic thin film solar cell. Moreover, the electronic device in this invention is a display apparatus (for example, organic electroluminescent display) provided with a light emitting element, an illumination apparatus (for example, organic electroluminescent apparatus), and the sensor provided with a photoelectric conversion element (for example, Organic CMOS image sensors). The film forming apparatus according to the present embodiment can be used as part of a film forming system including a sputtering apparatus or the like.

<Schematic structure of film forming apparatus>

FIG. 1: is a schematic diagram which shows the structure of the film-forming apparatus 2 which concerns on the Example of this invention. The film forming apparatus 2 includes a vacuum chamber (film forming chamber, vapor deposition chamber) 200 whose interior is maintained in an inert gas atmosphere such as a vacuum atmosphere or nitrogen gas by the exhaust device 24 and the gas supply device 25. Have In addition, in this specification, "vacuum" means the state in space filled with the gas of pressure lower than atmospheric pressure.

When the substrate 100 as the film forming object is transferred into the vacuum chamber 200 by a transfer robot (not shown), the substrate 100 is held by a substrate holding unit (not shown) installed in the vacuum chamber 200, and a mask is provided. 220 is mounted on the upper surface. The mask 220 is a metal mask having the opening pattern 221 corresponding to the thin film pattern formed on the board | substrate 100, and is provided in parallel with the horizontal plane in the vacuum chamber 200. As shown in FIG. The substrate 100 is placed on the upper surface of the mask 220 by the substrate holding unit so that, in the vacuum chamber 200, the lower surface of the substrate 100 in parallel with the horizontal surface and the surface to be treated is covered with the mask 220. Is installed into the sun.

An evaporation source device 300 is provided below the mask 220 in the vacuum chamber 200. The evaporation source device 300 is an outline of an evaporation source container (crucible) 301 (hereinafter referred to as a container 301) for accommodating the film formation material (deposition material) 400 and the film formation material 400 accommodated in the container 301. The heater 302 is provided as a heating means (heating source) which heats. The film-forming material 400 in the container 301 evaporates in the container 301 by heating of the heater 302, and is ejected out of the container 301 via a nozzle 303 provided on the container 301. The film-forming material 400 sprayed out of the container 301 is deposited on the surface of the substrate 100 provided above the apparatus 300, corresponding to the opening pattern 221 provided in the mask 220.

The heater 302 has the structure which wound one linear (wire-like) heat generating body which generate | occur | produces electricity by electricity, and wound it around the outer periphery of the cylindrical part of the container 301 several times. Moreover, the structure which wound up the some heat generating body may be sufficient. As the heater 302, a metal heat generating resistor such as stainless steel may be used as the heating element, or a carbon heater or the like may be used.

Although the illustration of the evaporation source device 300 is omitted, the reflector and the heat transfer member for improving the heating efficiency by the heater 302, the frame accommodating the entire configuration of each of the evaporation source device 300 including them, and the shutter. Etc. may be provided. In addition, the evaporation source device 300 may be configured to be relatively movable with respect to the fixedly placed substrate 100 in order to uniformly form the film on the entire substrate 100.

The film forming apparatus 2 according to the present embodiment is a means for detecting the amount of vapor of the film forming material 400 ejected from the container 301 or the film thickness of the thin film formed on the substrate 100. The apparatus 1 is provided. The film formation rate monitor apparatus 1 repeats a shielded state and an unshielded state intermittently with a part of the film-forming material 400 ejected from the container 301 by the shielding member 12 as a rotating body, and correct | amends a crystal monitor head. It is comprised so that it may be attached to the crystal vibrator provided in (11). By detecting the amount of change (decrease) in the resonance frequency (intrinsic frequency) of the crystal oscillator due to deposition of the film forming material 400, the film forming material (deposition rate) corresponding to the predetermined control target temperature is formed. The adhesion amount (deposit amount) of 400 can be acquired. The film deposition rate can be arbitrarily controlled by feeding back the film formation rate to the setting of the control target temperature in the heating control of the heater 302. Therefore, the film-forming rate monitor apparatus 1 monitors the discharge amount of the film-forming material 400 or the film thickness on the board | substrate 100 at all times during the film-forming process, and the film-forming with high precision is attained. The control unit (computation processing unit) 20 of the film forming apparatus 2 according to the present embodiment includes a monitor control unit 21 for controlling the operation of the monitor unit 10, measuring and acquiring the film forming rate, and an evaporation source device. The heating control part 22 which performs the heating control of 300 is provided.

<Film-forming rate monitor apparatus>

2 is a schematic diagram showing a schematic configuration of a film forming rate monitor device 1 according to the present embodiment. As shown in FIG. 2, the film-forming rate monitor apparatus 1 which concerns on a present Example is the monitor unit 10 provided with the monitor head 11, the shielding member (chopper) 12, etc., and the monitor control part ( 21). The monitor unit 10 includes a monitor head 11, a shielding member 12, a servo motor 16 as a rotation drive source of a crystal holder (rotary support) 14 provided in the quartz monitor head 11, The servo motor 15 as a rotation drive source of the shield member 12 is provided. The monitor control part 21 is a film-forming rate acquisition part which acquires the shielding member control part (rotation control part) 212 which controls the rotational drive of the shielding member 12, and the resonance frequency (change amount) of the crystal oscillator 13. As shown in FIG. 213 and a holder controller 214 for controlling the rotational drive of the crystal holder 14.

FIG. 3: is a schematic diagram which shows arrangement | positioning relationship of both when the monitor head 11 (crystal holder 14) and the shielding member 12 are seen along each rotation axis direction. As shown in FIG. 3, inside the monitor head 11, the crystal holder 14 which supports and arrange | positions the crystal oscillator 13 (13a, 13b) at equal intervals in the circumferential direction is provided. The monitor head 11 is provided with one monitor opening 11a which is slightly larger than the crystal oscillator 13, and the crystal holder 14 passes one of the crystal oscillators 13 supporting through the monitor opening 11a. It supports at the position (rotational phase) exposed to the exterior (deposition source apparatus 300).

As shown in FIG.2 and FIG.3, the center of the crystal holder 14 is connected to the motor shaft 16a of the servomotor 16, and is rotationally driven by the servomotor 16. As shown in FIG. Thereby, it is comprised so that the crystal oscillator 13 exposed to the outside through the monitor opening 11a can be switched one by one. That is, of the crystal oscillators 13 supported by the crystal holder 14, one crystal oscillator 13a is in a position where the phase overlaps with the monitor opening 11a, and the other crystal oscillator 13b is used. As a crystal oscillator for completion or replacement, it is in a position hidden inside the monitor head 11. When the crystal oscillator 13 exposed to the outside via the monitor opening 11a reaches the life span when the amount of deposition of the film forming material 400 exceeds a predetermined amount, the crystal holder 14 rotates, and a new crystal oscillator 13 ) Is moved to the exposure position overlapping with the monitor opening 11a.

The rotation control of the servo motor 16 by the holder control part 214 is the rotation position (rotation phase) of the crystal holder 14 which the phase position detection means 18 which consists of the detection part 18a and the to-be-detected part 18b detects. Is performed based on As the position (phase) detection means, a known position sensor such as a rotary encoder may be used.

As shown in FIG. 3, the shielding member 12 is a substantially disk-shaped member, the center of which is connected to the motor shaft 15a of the servomotor 15, and is rotationally driven by the servomotor 15. As shown in FIG. . The shielding member 12 is a position in which the fan-shaped opening slit (opening part, unshielding part) 12a is separated from the rotation center, and the rotation track is installed in the position which overlaps with the monitor opening 11a of the monitor head 11. It is.

2 and 3, when the shielding member 12 rotates, the position (opening phase) where the relative position (relative phase) of the opening slit 12a with respect to the monitor opening 11a overlaps with the monitor opening 11a (opening) Position, unshielded position) and non-overlapping positions (non-opening position, shielding position). Thereby, in the shielding member 12, the region part except the opening slit 12a becomes the shielding part 12b, and when it is in the position (phase) which overlaps (covers) with the monitor opening 11a, the crystal oscillator ( It becomes a shielding state (non-opening state) which prevents adhesion of the film-forming material 400 to 13a). Moreover, when the opening slit 12a is in the position (phase) which overlaps with the monitor opening 11a, it will be in the unshielded state (opening state) to allow attachment of the film-forming material 400 to the crystal oscillator 13a.

Rotation control of the servo motor 15 by the shield member control unit 212 is performed by the phase position detecting unit 17 including the detection unit 17a and the detected unit 17b (rotational position of the shield member 12). Phase). As the position (phase) detection means, a known position sensor such as a rotary encoder may be used.

Although the opening slit 12a is a closed hole in this embodiment, it may be a notch shape opened at the circumferential edge of the shielding member 12. In addition, two or more pieces may be provided, and the slit shape is not limited to the fan shape shown in the present embodiment, and various shapes can be adopted. When a plurality of the opening slits 12a are provided, they are individually different shapes. You may make it.

The crystal oscillator 13a is connected to the external resonator 19 via an electrode, a coaxial cable, or the like. The outgoing signal generated by applying a voltage between the thin film of the film forming material 400 deposited on the surface of the crystal oscillator 13a and the electrode on the back surface is a resonator (a change amount of the resonance frequency) of the crystal oscillator 13. 19 is transferred to the film forming rate acquisition unit 213 to acquire.

Although not shown, the monitor unit 10 is provided with a flow path for flowing cooling water for cooling the heat of the motors 15 and 16 serving as the heat source.

In addition, the structure of the film-forming rate monitor apparatus shown here is an example to the last, It is not limited to this, You may employ | adopt various known structures suitably.

<Features of this embodiment>

4 is a flowchart of power supply control to the heater 302 in the film forming apparatus 2 according to the present embodiment. The control principal of the flow to be described below is the control unit 20 described above, and also serves as a state determination unit in the present invention.

The amount of heat generated by the heater 302 is controlled by controlling the amount of power (current value) supplied to the heater 302 by the heating control unit 22 including the power supply circuit. The power supply amount is adjusted by PID control so that, for example, the temperature detected by a temperature detection means (not shown) is maintained at a predetermined control target temperature suitable for obtaining a desired film formation rate. By maintaining the heat generation amount (power supply to the heater 302) of the heater 302 which can maintain a predetermined film formation rate for a predetermined time, a thin film of a desired film thickness can be formed on the film formation surface of the substrate 100. (Film thickness = film-forming rate [k / S] x time [t]).

In the film-forming apparatus 2 which concerns on a present Example, as a control method of the supply electric power in the heating control of the heater 302, it is comprised so that execution is possible by switching rate control and average power control. In addition, the power control method is not limited to these.

In rate control, the control target temperature is changed in a timely manner so that the monitor value (actual value) of the film forming rate acquired by the film forming rate monitor apparatus 1 matches the desired target rate (theoretical value), Accordingly, the amount of power supplied to the heater 302 is controlled.

In this embodiment, the average power control is used as power control for determining the amount of power supplied to the heater 302 regardless of the monitor value (actual value) of the film forming rate acquired by the film forming rate monitor apparatus 1. In average power control, using the moving average of several past samplings of the supply power as the target power amount, the power supply to the heater 302 is controlled to maintain this target power amount. Moreover, you may use the power control which supplies electric power to the heater 302 so that the preset electric power amount (target electric power amount) may be maintained. In such electric power control, the film thickness is controlled using a theoretical value set based on the film formation conditions such as the film formation material type and the relative speed between the substrate and the evaporation source.

In this embodiment, as the basic power control method, the above-described rate control (first step) is adopted, and the power supply to the heater 302 is started (S101). In other words, the amount of power supplied to the heater 302 (control target temperature) is adjusted in a timely manner so that the monitor value of the film forming rate acquired by the film forming rate monitor device 1 maintains a desired rate.

At this time, the monitor value of the film-forming rate acquired by the film-forming rate monitor apparatus 1 may become an abnormal value separated from the target rate for some reason. As the cause of the monitor value having an abnormal value, in this embodiment, two causes of (1) occurrence of Dolby of the film forming material 400 and (2) occurrence of failure of the monitor unit 10 are assumed, It is characterized by performing control for determining the abnormal state of the film forming apparatus 2. When a dolby generate | occur | produces in the film-forming material 400 in the container 301, the adhesion amount of the film-forming material 400 with respect to the crystal oscillator 13a may increase instantaneously and unexpectedly. In addition, as the failure of the monitor unit 10, the amount of deposition of the film forming material 400 on the crystal oscillator 13 may increase excessively and the monitor value may become an abnormal value. Therefore, a threshold value for determining whether or not the monitor value acquired in the rate control indicates a value in the above-described abnormal state is set, and the confirmation is confirmed every time the film forming rate is acquired during the rate control. (S102).

If the film formation rate obtained does not exceed the threshold value (S102: YES), the rate control continues continuously (S101). If the abnormal film formation rate is not obtained as it is, rate control continues until the end of the film formation sequence. (S103).

When the film-forming rate acquired reaches a threshold (NO in S102), the process proceeds to a determination sequence for determining the state of the film-forming apparatus 2, and the power control is switched from rate control to average power control (second step) ( S104). That is, electric power is supplied to the heater 302 with a fixed amount of power. In this state, the rotation control mode of the shielding member (chopper) 12 is changed to a rotation control mode (second shielding mode) different from the rotation control mode (first shielding mode) executed at the rate control (first 3 step) (S105). Specifically, the shielding member (for a predetermined period (predetermined unit period) to change the length of the period which becomes the unshielded state, that is, the exposure time of the crystal oscillator 13a in the predetermined period). 12) to change the rotation control. The change amount (change amount) of the resonance frequency of the crystal oscillator 13a in the predetermined period is changed by the change in the exposure time due to the change of the exposure time in the predetermined period due to the change of the rotation control. Whether or not the change amount in the predetermined period of the deposition amount of the film forming material 400 to the crystal oscillator 13a indicates a value corresponding to the change amount of the exposure time in the predetermined period ( 4 step) (S106). From the variation amount of this resonance frequency, the state of the film-forming apparatus 2 is determined.

Here, with reference to FIG. 5, the rotation control mode of the shielding member 12 in a present Example is demonstrated. 5 is a graph illustrating rotation control of the shielding member 12 in the present embodiment, (a) is a graph illustrating rotational control of the shielding member 12 in the first mode, and (b). ) Is a graph illustrating rotational control of the shielding member 12 in the second mode. In FIG. 5, 0 is shown when the shielding member 12 is in the state which shielded the crystal oscillator 13, and 1 is when it is in the state which is not shielding, respectively.

In this embodiment, in order to determine the state of the film-forming apparatus 2, it is characterized by changing the control of the rotation operation of the shielding member 12. FIG. Specifically, the shielding member 12 so that the exposure time of the crystal oscillator 13a in a predetermined period becomes longer than the 1st shielding mode (hereinafter, 1st mode) which is rotation control in normal rate control. A second shielding mode (hereinafter referred to as a second mode) for controlling the rotational speed of the device is executed.

In the second mode, the normal rotational speed of the shielding member 12 in the unshielded state in which the opening slit 12a overlaps with the monitor opening 11a is shielded so that the opening slit 12a does not overlap with the monitor opening 11a. Control to be 1/10 of the normal rotational speed in the state. In the first mode, the rotation of the shielding member 13 is controlled at a constant normal rotational speed regardless of whether the opening slit 12a and the monitor opening 11a are shielded or unshielded. The normal rotational speed in the shielding state of the second mode and the normal rotational speed in the first mode are the same speed, so that the normal rotational speed in the unshielded state in the second mode is the first. It is 1/10 of the normal rotational speed in the unshielded state in the mode. Thereby, when compared in the same predetermined period (unit period), the time length (second length) of the period to be in the unshielded state in the second mode is the time of the period to be in the unshielded state in the first mode. It is longer than the length (first length).

Fig. 5 (a) shows the length of time TO1 of the period in which it is in an unshielded state (membrane attached state) in the first mode, and in Fig. 5 (b) the time in the period in which it becomes an unshielded state in the second mode. The length TO2 is shown. As shown in FIG. 5, when the normal rotational speed becomes 1/10, TO2 is 10 times as long as TO1. As a predetermined period, when the first mode and the second mode are compared within the time shown in FIG. 5, the number of times of being unshielded in the first mode is three times. The number of times is two times, and the number of times is the first mode. However, in the duration of one unshielded state, the second mode becomes longer than the first mode, and the duration of the total unshielded state within a predetermined period also becomes longer than the first mode. .

In the example shown in FIG. 5, the ratio of the time in the unshielded state per unit time is about 3.3% in the first mode, but is about 25% in the second mode.

Since the said ratio of about 3.3% in a 1st mode is a numerical value by constant speed rotation control, it is a numerical value corresponded to the opening ratio of the shielding member 12 (area ratio of the opening part 12a with respect to the shielding part 12b). That is, in the shielding member 12 in this embodiment, the area ratio of the shielding part 12b and the opening part 12a consists of opening part 12a: 1/130, and shielding part 12b: 29-30. The opening ratio of the shielding member 12 is 1/30 = 3.3%.

On the other hand, the said ratio of about 25% in a 2nd mode is calculated | required as follows. That is, since the normal rotational speed in the unshielded state becomes 1/10 of the normal rotational speed in the shielded state, the time to become an open state (unshielded state) is 1 compared with the first mode. / 30 * 1/10 = 10/30. On the other hand, the time to become a closed state (shield state) is 29/30 like the 1st mode. Therefore, time of opening / time of one rotation of opening ratio = open state = 10/30 / (10/30 + 29/30) = 10/39 = 0.25.

That is, the opening ratio of the shielding member 12 is changed by the shift control (control to make the normal rotational speed in the unshielded state slower than the normal rotational speed in the shielded state) of the shielding member 12 according to the present embodiment. Can be substantially increased. Thereby, without taking a method of physically changing the shape of the shielding member 12 (without complicating the device configuration), the aperture ratio of the shielding member 12 is variably controlled to provide the crystal oscillator 13 with respect to the crystal oscillator 13. It becomes possible to control the film-forming amount arbitrarily.

When the rotation control mode of the shielding member 12 changes, the ratio of time in the unshielded state per unit time changes, and the actual opening ratio of the shielding member 12 changes. As a result, the deposition amount of the film forming material 400 on the crystal oscillator 13 in the predetermined period is varied, and the variation in the resonance frequency of the crystal oscillator 13 in the predetermined period is also varied. That is, as long as the monitor unit 10 is operating normally, the change in the length of the period of the unshielded state by the shielding member 12 within the predetermined period is the crystal oscillator 13 in the predetermined period. Will appear as a change in the variation of the resonant frequency. However, when the above-described failure occurs and the monitor unit 10 does not operate normally, even if the rotation control of the shield member 12 is changed, the crystal oscillator 13 in the predetermined period of time is changed. The fluctuation amount of the resonance frequency may not change sufficiently or may be in a state in which the fluctuation amount becomes zero.

Therefore, when the change in the amount of change in the resonance frequency of the crystal oscillator 13 acquired before and after the change in the rotational control of the shielding member 12 represents a change in accordance with the change in the rotational control of the shielding member 12, S102. It is determined that the cause of the abnormal value of the film formation rate in Dolby (S106: YES). For example, it is determined whether or not the monitor unit 10 falls within a predetermined numerical value or a value previously set by an experiment or the like as a ratio of the change in the amount of change in the resonance frequency expected when the monitor unit 10 is operating normally. When the change in the acquired variation of the resonance frequency falls within a predetermined value or a predetermined numerical range, it is determined that the cause of the abnormal value of the film formation rate is Dolby. In this case, Dolby correspondence control (fifth step) is performed (S107). In this embodiment, control to return to rate control is performed as Dolby correspondence control. The Dolby correspondence control is not limited to this, and control may be performed to stop the film formation sequence according to the degree, frequency, or the like of the Dolby.

On the other hand, when the amount of change in the resonance frequency of the crystal oscillator 13 acquired before and after the change of the rotational control of the shielding member 12 does not show the change according to the change of the rotational control of the shielding member 12 (S106: NO ), It is determined that the above-described failure of something occurs in the monitor unit 10. For example, when the change in the amount of variation in the acquired resonance frequency does not become the above-mentioned predetermined value or does not fall within the predetermined numerical range, the cause of the abnormal value of the film forming rate is the failure of the monitor unit 10. Is determined. Specifically, when the rotational control of the shielding member 12 is changed (first mode to second mode), the variation amount of the resonance frequency of the crystal oscillator 13 becomes zero or the variation of the variation amount is remarkably lowered. A case may be considered, but it is not limited to this.

In this case, monitor correspondence control (sixth step) is performed (S108). In the present embodiment, as the monitor-corresponding control, the control which continues the average power control switched in S104 until the end of the film forming sequence is performed (S109). In addition, monitor correspondence control is not limited to this, For example, you may interrupt control of a film-forming sequence, and may perform control which informs a user of the failure of the monitor unit 10. FIG.

According to the above control, film formation control can be performed by appropriately determining whether the abnormal value of the film formation rate is caused by the Dolby or the failure of the monitor unit 10 in the film formation material 400 in the evaporation source container 301. have. In addition, the cause can be determined by the simple control by switching the power control and changing the rotation control of the shielding member. In particular, it is not easy to directly check the monitor unit disposed in the vacuum chamber with respect to the failure of the monitor unit 10, and it can be confirmed by the above control, which is very advantageous for shortening the manufacturing tact. That is, according to this embodiment, it becomes possible to grasp the situation of the apparatus more accurately and simply and to perform film-forming control.

The method of controlling the rotation of the shielding member 12 for confirming the change in the variation amount of the resonant frequency of the crystal oscillator in a predetermined period is not limited to the above-described control method. For example, in the rotational control of the shielding member 12 in the second mode, the number of times of the non-shielding state within a predetermined period by temporarily changing the rotational direction of the shielding member 12 in the reverse direction and reciprocating. You can increase the (higher frequency). By reciprocating the shielding member 12 so that the opening slit 12a moves back and forth in the vicinity of the monitor opening 11a, it rotates in a single direction and forms an unshielded state periodically, within a predetermined period. The number of occurrences of an unshielded state can be increased. Thereby, the duration time of the total unshielded state in a predetermined period can be lengthened. In addition, from the viewpoint of film deposition non-uniformity, the inversion of the rotational direction in the reciprocating rotational motion is performed after the opening slit 12a completely passes through the monitor opening 11a (that is, the crystal oscillator 13a is sufficiently shielded). It is preferable to carry out after becoming a state).

Alternatively, in the second mode, the control period changes the normal rotational speed in the shielded state to a speed faster than the normal rotational speed (normal rotational speed in the first mode) in the unshielded state. You may increase the frequency | count of the unshielded state in the inside.

In the second mode, the duration of the unshielded state within a predetermined period may be increased by temporarily stopping the rotation of the shielding member 12 in the unshielded state.

Furthermore, it is good also as control which combined the control mentioned above. For example, it is good also as control to make a reciprocation rotation so that a shielding state and an unshielding state may repeat in a short period, decelerating the normal rotational speed in an unshielded state.

In addition, in this embodiment, although the normal rotation speed in the shielding state of a 2nd mode and the normal rotation speed in a 1st mode are made the same speed, the effect which substantially increases the aperture ratio of the shielding member 12 is carried out. In the range where is obtained, you may set at another speed suitably.

1: film formation rate monitor device
10: monitor unit
11: fix monitor head
11a: monitor opening
12: shielding member (chopper)
12a: opening slit (opening part, unshielding part)
12b: shield
13 (13a, 13b): crystal oscillator
14: crystal holder (rotary support)
15: Servo Motor (Driver)
15a: motor shaft
16: Servo Motor (Driver)
16a: motor shaft
17 (17a, 17b): position (rotational phase) detection means
18 (18a, 18b): position (rotational phase) detecting means
19: resonator
2: deposition device
100: substrate
20: control unit (acquisition unit, heating control unit)
200: vacuum chamber (film formation chamber)
300: evaporation source device
301: evaporation source container (crucible)
302: heater (heating source)
303: nozzle

Claims (23)

A chamber for receiving the film forming object,
A heating control section for controlling electric power to be supplied to a heating source for heating the film formation material contained in the container disposed in the chamber;
A monitor unit for detecting the deposition rate of the deposition material on the deposition object, disposed in the chamber, comprising: a monitor unit having a crystal vibrator, a shielding portion and an opening, and a rotating body disposed between the crystal vibrator and the container and,
The rotation of the rotating body is controlled so that the shielding part can take any one of a shielding state located between the container and the crystal oscillator and an unshielded state located between the container and the crystal oscillator. With a rotation control unit,
An acquisition unit for acquiring the film formation rate based on a change in the resonance frequency of the crystal oscillator;
And
A film forming apparatus for forming a film by the film forming material on the film forming object,
In a state in which the heating control unit keeps the power supplied to the heating source constant, the rotation control unit causes the rotational speed of the rotating body to be varied so that the length of the non-shielding period in a predetermined period is changed. And a state determining unit that determines a state of the film forming apparatus on the basis of a change in the variation amount of the resonance frequency in the predetermined period at the time. The method of claim 1,
The film formation is performed by a rate control in which the heating control section controls the amount of power so that the film formation rate acquired by the acquisition unit is maintained at a predetermined value.
And the determination sequence of the state of the film forming apparatus by the state determining unit is executed when the film forming rate acquired by the obtaining unit exceeds a predetermined threshold value. The method of claim 2,
When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the control unit switches from the rate control to the power control supplied by the heating control unit with the amount of power set regardless of the film formation rate acquired by the acquisition unit. A film forming apparatus, characterized in that. The method according to any one of claims 1 to 3,
The amount of change in the resonance frequency in the predetermined period when the rotation control section changes the rotational speed of the rotating body so that the length of the period in which the unshielded state is in the predetermined period changes. And the state determining unit determines that the monitor unit is in a state where a failure has occurred, when the change amount according to the change in the length of the period to become the unshielded state in the camera unit is set. The method according to any one of claims 1 to 4,
A predetermined value is a variation in the resonance frequency in the predetermined period when the rotation control section changes the rotational speed of the rotating body so that the length of the period in which the non-shielding state is in the predetermined period changes. And when not exceeding, the state determining unit determines that a failure has occurred in the monitor unit. The method according to any one of claims 1 to 5,
The amount of change in the resonance frequency in the predetermined period when the rotation control section changes the rotational speed of the rotating body so that the length of the period in which the unshielded state is in the predetermined period changes. And the state determining unit determines that the dolby is generated in the film forming material when the amount of fluctuation in accordance with the change in the length of the period to become the unshielded state in the film forming material. The method according to any one of claims 1 to 6,
A predetermined value is a variation in the resonance frequency in the predetermined period when the rotation control section changes the rotational speed of the rotating body so that the length of the period in which the non-shielding state is in the predetermined period changes. And the said state determination part determines that Dolby has generate | occur | produced in the said film-forming material, when exceeding. The method according to any one of claims 1 to 7,
When the state determining unit determines that the state of the film forming apparatus is a state in which a failure occurs in the monitor unit, the heating control unit supplies power to the subsequent film forming with an amount of power set regardless of the film forming rate acquired by the obtaining unit. The film forming apparatus is performed by power control to be supplied. The method according to any one of claims 1 to 8,
When the state determining unit determines that the state of the film forming apparatus is a state where Dolby has occurred in the film forming material, the heating control unit controls the power so that the film forming rate obtained by the obtaining unit maintains the subsequent film forming at a predetermined value. The film forming apparatus is performed by rate control. The method according to any one of claims 1 to 9,
A first shielding mode in which the rotation control unit rotates the shielding member so that the period in which the unshielded state becomes a first length in a predetermined period;
A second shielding mode in which the rotation control unit rotates the shielding member so that the period in which the unshielded state is in the predetermined period becomes a second length longer than the first length,
Including,
The change of the variation amount of the said resonance frequency in the said predetermined period when switching from the said 1st shielding mode to the said 2nd shielding mode in the state in which the said heating control part kept the electric power supplied to the said heating source constant. And the state determining unit determines the state of the film forming apparatus. The method of claim 10,
The said rotation control part rotates the said shielding member so that the rotational speed in the said non-shielding state may become slower than the rotational speed in the said shielding state in the said 2nd shielding mode. The method according to claim 10 or 11,
The rotation control unit rotates the shielding member so that the rotational speed in the unshielded state of the second shielded mode is lower than the rotational speed in the unshielded state of the first shielded mode. Film forming device. The method of claim 10,
The rotation control section has a frequency in which the unshielded state is in the predetermined period in the second shielding mode is higher than a frequency in which the unshielded state is in the predetermined period in the first shielding mode. The film forming apparatus, wherein the shielding member is reciprocally rotated in the second shielding mode so as to increase. The method of claim 1,
A container for receiving the film forming material and disposed in the chamber;
A heating source for heating the vessel by being supplied with electric power, the heating source of which electric power supplied is controlled by the heating control unit,
Further comprising, the film forming apparatus. A chamber for receiving the film forming object,
A heating control section for controlling electric power to be supplied to a heating source for heating the film formation material contained in the container disposed in the chamber;
A monitor unit for detecting the deposition rate of the deposition material on the deposition object, disposed in the chamber, comprising: a monitor unit having a crystal vibrator, a shielding portion and an opening, and a rotating body disposed between the crystal vibrator and the container and,
The rotation of the rotating body is controlled so that the shielding part can take any one of a shielding state located between the container and the crystal oscillator and an unshielded state located between the container and the crystal oscillator. With a rotation control unit,
An acquisition unit for acquiring the film formation rate based on a change in the resonance frequency of the crystal oscillator;
And
In the control method of the film-forming apparatus which forms a film | membrane by the said film-forming material into the said film-forming object,
A first step of performing the film formation by a rate control in which the heating control part controls the amount of power so that the film forming rate acquired by the acquisition unit is maintained at a predetermined value;
When the film formation rate acquired by the acquisition unit exceeds a predetermined threshold value, the control unit switches from the rate control to power control supplied by the heating control unit with the amount of power set regardless of the deposition rate acquired by the acquisition unit. A second step of performing the film formation;
A third step of causing the rotation control unit to change the rotational speed of the rotating body so that the length of the period of the non-shielding state in the predetermined period is changed between the second steps;
A fourth step of determining the state of the film forming apparatus based on a change in the amount of change in the resonance frequency in the predetermined period when the rotational speed is changed in the third step,
Control method of the film deposition apparatus comprising a. The method of claim 15,
In the fourth step, when the amount of variation does not exceed a predetermined value, it is determined that a failure has occurred in the monitor unit, and when the amount of variation exceeds a predetermined value, a state where a dolby is generated in the film forming material. And a control method of the film forming apparatus. The method according to claim 15 or 16,
In the fourth step, if it is determined that the state of the film forming apparatus is a state in which the Dolby has occurred in the film forming material, the method further includes a fifth step of switching from the power control to the rate control to continue the film formation. The control method of the film-forming apparatus. The method according to any one of claims 15 to 17,
In the fourth step, the film forming apparatus further includes a sixth step of continuing the film formation by the electric power control when the state of the film forming apparatus is determined to be a state in which a failure occurs in the monitor unit. Control method. The method according to any one of claims 15 to 18,
The film forming apparatus,
A first shielding mode in which the rotation control unit rotates the shielding member so that the period in which the unshielded state becomes a first length in a predetermined period;
A second shielding mode in which the rotation control unit rotates the shielding member so that the period in which the unshielded state is in the predetermined period becomes a second length longer than the first length,
Including,
In the first step, executing the first shielding mode,
In the third step, switching from the first shielding mode to the second shielding mode. The method of claim 19,
The said rotation control part rotates the said shielding member so that the rotational speed in the said non-shielding state may become slower than the rotational speed in the said shielding state in the said 2nd shielding mode, The control of the film-forming apparatus characterized by the above-mentioned. Way. The method of claim 19 or 20,
The rotation control unit rotates the shielding member so that the rotational speed in the unshielded state of the second shielded mode is lower than the rotational speed in the unshielded state of the first shielded mode. The control method of the film-forming apparatus. The method of claim 19,
The rotation control section has a frequency in which the unshielded state is in the predetermined period in the second shielding mode is higher than a frequency in which the unshielded state is in the predetermined period in the first shielding mode. And the shielding member is reciprocally rotated in the second shielding mode so as to increase. The method of claim 15,
The film forming apparatus,
A container for receiving the film forming material and disposed in the chamber;
A heating source for heating the vessel by being supplied with electric power, the heating source of which electric power supplied is controlled by the heating control unit,
Control method of the film forming apparatus further comprising.

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