KR20130111337A - Vacuum evaporation apparatus - Google Patents

Abstract

PURPOSE: A deposition apparatus is provided to prevent the thermal deterioration of a deposition material, and to minimize the residue of the deposition material. CONSTITUTION: A deposition apparatus includes a crucible (22), a temperature sensor (27), a valve, and a film thickness monitor (26). The crucible heats and evaporates a deposition material. The evaporated deposition material is guided to a deposited member through a path inside a vacuum chamber. The temperature sensor detects the temperature of the crucible. The valve at the path controls an opening degree thereof. The film thickness monitor inside the vacuum chamber detects the film thickness of the deposited member. [Reference numerals] (AA) Finish evaporation; (BB) End evaporation; (CC) Start evaporation

Description

Evaporation Equipment {VACUUM EVAPORATION APPARATUS}

The present invention relates to metal electrode wiring such as metal thin film, organic material thin film, solar cell or display panel, and organic EL light emitting layer. The present invention relates to a vapor deposition apparatus used for depositing light and the like.

In general, the deposition used to form the thin film is performed at a high vacuum of 10 ⁻⁴ Pa or more. For example, in the vacuum deposition apparatus shown in Japanese Patent Laid-Open No. 2004-91858, a crucible and a substrate to which an electric heater is wound and mounted in a vacuum chamber (vacuum container) and containing vapor deposition material are mounted. Is installed. The thin film is formed by evacuating the inside of the vacuum chamber to a high vacuum as described above, then heating the crucible with an electric heater to melt and evaporate the evaporation material in the crucible and attaching it to the substrate to be deposited. The deposition rate (the amount of deposition material deposited per unit time) of this deposited substrate is usually controlled by the heating temperature of the crucible. However, even if the temperature of the crucible is stable, the deposition rate is difficult to be stabilized as the deposition material in the crucible is gradually transferred due to thermal conductivity or the like. Here, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 2010-242202, a flow rate adjustment valve is placed in the path of the evaporation molecule, and from a film thickness sensor (film thickness meter) provided near the substrate. The deposition rate is stabilized by feeding back a signal to the flow rate control valve.

In the method using the flow regulating valve, even if the temperature of the crucible is increased to a high temperature and the amount of evaporation is controlled by the valve, the evaporation rate can be kept stable and the material in the crucible can be used to a minimum. Has characteristics. However, when heated at a high temperature for a long time, a problem arises in that in the case of a vapor deposition material that is weak in heat, thermal deterioration occurs and the characteristics of the material are not obtained. On the contrary, when the temperature of the crucible is low, the amount of evaporation of the evaporation material decreases, which makes it difficult to keep it stable for a long time at a predetermined evaporation rate even when a flow regulating valve is used. ), There is a problem that waste of the deposition material occurs.

An object of the present invention is to provide a vapor deposition apparatus capable of preventing thermal degradation of a vapor deposition material and minimizing the residual of the vapor deposition material.

In order to achieve the above object, the present invention according to claim 1 is a vapor deposition apparatus for attaching an evaporated deposition material to a member to be deposited in a vacuum chamber, wherein the vapor deposition material is heated to evaporate. A crucible and a path for guiding the vapor deposition material evaporated by the crucible to the deposition member in the vacuum chamber,

A temperature sensor for detecting the temperature of the crucible is provided,

In the path, a valve having an opening degree adjustment function is provided,

In the vacuum chamber, a film thickness monitor for detecting the film thickness of the member to be deposited is provided,

The deposition rate of the member to be deposited is detected by the film thickness detected by the film thickness monitor, and the opening degree of the valve is adjusted while adjusting the opening degree of the valve so that the deposition rate becomes a predetermined deposition rate. A controller that detects a rate of change of the crucible and increases the deposition temperature of the deposition material by raising the set temperature of the crucible by an incremental value if the rate of change exceeds the rate of change of stability in a stable state at a predetermined deposition rate. (controller) is installed.

According to the above configuration, the deposition rate of the member to be deposited is detected by the film thickness detected by the film thickness monitor, and the opening degree of the valve is adjusted so that the deposition rate becomes a predetermined deposition rate. When the deposition material in the crucible is reduced, the opening degree of the valve is adjusted to maintain a predetermined deposition rate from the lowering of the evaporation amount. When the rate of change of the opening degree of the valve is equal to or more than the stable change rate, the temperature of the crucible is increased. The predetermined temperature rises and the amount of evaporation of the deposition material from the crucible increases. This avoids the inability to adjust the opening degree of the valve for the predetermined deposition rate. Further, by increasing the temperature incrementally, the thermal degradation of the deposition material can be prevented and the residual of the deposition material can be minimized.

In the invention according to claim 2, in the invention according to claim 1, when the controller performs a process of raising the set temperature of the crucible by an incremental value, the controller controls the opening degree of the valve while maintaining the raised set temperature for a predetermined time. When the rate of change of the opening degree of the valve exceeds the stable rate of change after the predetermined time has elapsed, the set temperature of the crucible is further increased by the increment value.

According to the above constitution, when the temperature of the crucible is increased by an incremental value, this temperature is maintained for a certain time, and within this constant time, the crucible rises late and the amount of evaporation of the evaporation material from the crucible is increased slowly. In this way, the evaporation amount of the evaporation material corresponding to the incremental temperature rise at a certain time increases, and thus the rate of change of the opening degree of the valve decreases or the valve changes in the closing direction. At this time, if the increase of the evaporation amount of the evaporation material based on the temperature rise of the crucible by the increment value is insufficient, the rate of change of the opening degree of the valve exceeds the rate of change of stability. Here, the set temperature of the crucible is further increased by the incremental value, and thus the temperature of the crucible is increased stepwise by the temperature of the incremental value.

In the present invention according to claim 3, in the present invention according to claim 1 or 2, the controller is configured to set the temperature of the crucible with the valve closed to a minimum temperature at which the valve obtains a predetermined deposition rate at a predetermined opening degree. When the temperature rises and the detection temperature of the crucible rises to this minimum temperature, the valve is opened to a set opening degree, and the opening degree of the valve which obtains a predetermined deposition rate is started.

According to the above configuration, first, in the initial state, the temperature of the crucible is raised to the lowest temperature at which the valve obtains the predetermined deposition rate at the predetermined opening degree, and in this state, the valve is opened to the predetermined opening degree to obtain the predetermined deposition rate. The opening degree adjustment of the valve starts. Thus, by starting vapor deposition from the lowest temperature, the vapor deposition material can be used effectively and to the end. If the evaporation amount of the evaporation material is increased by setting the temperature of the crucible at a high temperature from the beginning, thermal deterioration occurs and the characteristics of the evaporation material are not obtained.

In the present invention according to claim 4, the present invention according to any one of claims 1 to 3, wherein the controller is further opened when the valve is further opened when the detection temperature of the crucible rises to the deterioration temperature of the vapor deposition material. Ending evaporation of the deposition material by the crucible is characterized in that the end.

According to the above configuration, if the valve is further opened while the temperature of the crucible has risen to the deterioration temperature of the deposition material, it is determined that the predetermined deposition rate cannot be obtained and the deposition is terminated.

In the vapor deposition apparatus of the present invention, if the rate of change of the opening degree of the valve exceeds the stable rate of change, the temperature of the crucible is increased by an incremental value so that the evaporation amount of the evaporation material from the crucible is increased, so that the opening degree of the valve for a predetermined deposition rate can be adjusted. Can be avoided. In addition, according to the present invention, by increasing the temperature incrementally, it is possible to prevent thermal deterioration of the deposition material and to minimize the residual of the deposition material.

1 is a configuration diagram of an embodiment of a vapor deposition apparatus of the present invention.
Fig. 2 is a control block diagram of the valve opening degree control device of the vapor deposition apparatus.
Fig. 3 is a control block diagram of the crucible heater control device of the vapor deposition apparatus.
4 is a flowchart for explaining the operation of the vapor deposition apparatus.
Fig. 5 is a diagram showing the characteristics of the deposition rate, crucible temperature, and valve opening degree in the vapor deposition apparatus.

1 is a configuration diagram of an embodiment of a vapor deposition apparatus of the present invention. As shown in Fig. 1, a glass substrate (deposition member) in a vacuum atmosphere (vacuum bath / deposition vessel) 11 is placed in a vacuum atmosphere. An evaporation chamber 13 for depositing evaporated particles (evaporated evaporation material, for example, an organic EL material) on the surface (lower surface) of one example 12 is provided. In the vacuum chamber 11, a vacuum port 14 serving as a vacuum atmosphere is formed by a vacuum unit (not shown). The upper part of the vacuum chamber 11 is provided with a work support 15 for supporting the glass substrate 12. The vapor deposition apparatus shown in the figure is an up-blow type (up deposition) which deposits evaporated particles from the lower surface (deposited surface) of the glass substrate 12 supported by the work support 15. -deposition).

In the lower part of the vacuum chamber 11, a material transport pipe (an example of a path for leading evaporated particles to the glass substrate) 17 for guiding evaporated particles to the glass substrate 12 is provided. And the opening part 17a of the material transportation pipe 17 is arrange | positioned so that the lower surface of the glass substrate 12 may be opposed. Between the opening 17a of the material transport pipe 17 and the work support 15, an open shutter 18 is provided which can prevent evaporated particles from reaching the glass substrate 12. have.

The material transport pipe 17 has a flow control valve (an example of a valve for adjusting the opening degree of a path: a control valve) outside the vacuum chamber 11 (19). ) Is installed. The flow rate control valve 19 can control the flow rate of the evaporated particles by adjusting the opening degree. The first heater 20 is wound around and mounted on the material transport pipe 17 and the flow control valve 19. The material transport pipe 17 and the flow control valve 19 are heated to a temperature higher than the ambient temperature by the first heater 20.

On the outside of the vacuum chamber 11, a crucible (material storage container) (upstream end of the material transportation pipe 17, that is, the position furthest from the vacuum chamber 11 in the material transportation pipe 17) ( 22) is installed. The second heater (the crucible heater) 23 is wound around and mounted on the crucible 22. The vapor deposition material 24 accommodated in the crucible 22 is heated by this second heater 23 to form evaporated particles, and the evaporated particles formed are supplied to the material transport pipe 17.

In the vapor deposition chamber 13, a film thickness monitor 26 for detecting the film thickness of the vapor deposition material deposited on the glass substrate 12 is provided in proximity to the work support 15. The crucible 22 is provided with a temperature sensor 27 which detects the temperature of the crucible 22, specifically, the internal temperature of the crucible 22, that is, the temperature of the vapor deposition material 24.

Outside the vacuum chamber 11, a valve opening control device 29 and a crucible heater control device 30 are provided.

[Valve opening controller 29]

As shown in Fig. 1 and Fig. 2, the valve opening degree control device 29 is inputted with data of the film thickness detected by the film thickness monitor 26, and is a vapor deposition material output from the crucible heater control device 30. The minimum temperature arrival signal and the vapor deposition stop signal at (24) are input. Further, the valve opening command L (an electrical signal corresponding to 0 to 100% valve opening) is output from the valve opening control device 29 to the flow rate control valve 19, and the valve is opened to the crucible heater control device 30. The opening degree sudden rise signal and the deposition end signal are output, and the deposition end signal is output to the outside (such as a high-level computer managing the deposition process). In Fig. 2, one crucible heater control device 30 is described in duplicate in left and right of the figure in order to simplify the display of the figure.

As shown in Fig. 2, the valve opening degree control device 29 includes a deposition rate detecting unit 31, a deposition end detecting unit 32, and a valve opening control unit (as shown in Fig. 2). valve valve control section 33, shutter opening and closing section 34, valve opening change rate detecting section 35, and valve stability change rate detecting section A valve 36 and a valve opening detecting portion 37 are also provided. Among them, the deposition rate detection unit 31 calculates the deposition rate R of the evaporated particles on the glass substrate 12 based on the change in the film thickness information input from the film thickness monitor 26. When the deposition end detection unit 32 reaches the deposition film thickness required by the film thickness, which is the information input from the film thickness monitor 26, the deposition end signal is formed to form the deposition film having the required thickness and the crucible heater control device 30 The valve opening degree control unit 33 and the valve opening degree are also output to the outside of the control unit 29.

(Valve opening degree control part 33)

The valve opening degree control unit 33 in the valve opening degree control device 29 has the following functions.

(a) When the crucible heater control device 30 does not input the minimum temperature arrival signal of the deposition material 24 or when the deposition stop signal is input or when the deposition end signal is input by the deposition end detection unit 32. To the flow control valve 19, a valve opening command L (electric signal corresponding to 0% valve opening) is outputted.

(b) When the crucible heater control device 30 inputs the lowest temperature attainment signal of the deposition material 24, that is, a signal indicating that the deposition material 24 is heated to a minimum temperature suitable for the deposition process by heating. Is inputted, a valve opening command L for gradually opening the valve to a predetermined opening degree (for example, 70%) is output to the flow control valve 19.

(c) When the flow rate control valve 19 is opened to the predetermined opening degree (when the valve opening instruction L becomes a predetermined opening value), the predetermined deposition rate Re and the deposition rate detection unit 31 are set in advance. The deviation from the obtained deposition rate R is obtained, and the valve opening command L is adjusted to eliminate this deviation.

(Shutter opening and shutting part 34)

The shutter opening / closing part 34 confirms the opening degree of the flow control valve 19 by the valve opening instruction L, and when the opening degree of the flow control valve 19 is less than the predetermined opening degree (for example, 70%), the shutter ( All the shutters 18) are closed, and when the predetermined opening degree (for example, 70%) or more is reached, all the shutters 18 are opened.

(Valve opening change rate detection unit 35)

The flow rate control valve 19 is controlled so that the valve opening gradually increases in normal cases as the deposition process proceeds. The valve opening change rate detection unit 35 calculates the change in valve opening degree (referred to as " valve opening change rate ") ΔZ based on the valve opening command L. As shown in FIG.

ΔZ ← Z / t

Where Z: valve opening

t: elapsed time

(Valve Stability Change Rate Detector 36)

As described above, the flow rate control valve 19 is controlled so that the valve opening degree gradually increases as the deposition process proceeds. The valve stability change rate detection unit 36, when the deposition rate R detected by the deposition rate detection unit 31 is stabilized by the predetermined deposition rate, is the valve opening degree command L input from the valve opening degree control unit 33. ) To determine the increase in valve opening rate (called "valve stability change rate") (ΔZ1) per unit time.

ΔZ1 ← Z1 / t1

Where Z1: valve opening when the deposition rate is stabilized

t1: Elapsed time when deposition rate is stabilized

(Valve opening sudden rise detection unit 37)

When the valve opening change rate detection unit 37 detects that the valve opening change rate ΔZ detected by the valve opening change rate detection unit 35 rises more rapidly than the valve stability change rate ΔZ1 detected by the valve stability change rate detection unit 36. (ΔZ >> ΔZ1) and the valve opening degree sudden rise signal is output to the crucible heater control device 30. For example, the valve opening degree sudden increase signal is outputted when the valve stability change rate ΔZ = 1 or more, depending on the valve opening degree-deposition rate characteristic (varies depending on the deposition material).

Crucible Heater Control Unit 30

As shown in FIGS. 1 and 3, the temperature of the crucible 22 detected by the temperature sensor 27, that is, the temperature of the deposition material 24, is input to the crucible heater control device 30. The valve opening output from the device 29 also receives a sudden rise signal and a deposition end signal, and a deposition start signal from the outside. In addition, the crucible heater control device 30 outputs the lowest temperature attainment signal and the deposition stop signal of the deposition material 24 to the valve opening degree control device 29, and the temperature is set to the predetermined (fixed) temperature by the first heater 20. The power supply command and the power supply stop command are outputted and the power supply command (E) is supplied to the second electric heater 23 (an electric signal corresponding to 0 to 100% of the power supply). Is output and the vapor deposition stop signal is output to the outside. In Fig. 3, in order to simplify the display of the drawing, one valve opening degree control device 29 is described in duplicate in the left and right of the drawing.

As shown in FIG. 3, the crucible heater control device 30 includes a sequence part 41, a target heating temperature setting part 42 of the crucible 22, a crucible temperature control part 43, The minimum temperature reached detector 44 and the deterioration temperature detector 45 are provided.

(Sequence part 41)

The sequence section 41 has the following functions.

(a) When a vapor deposition start signal is input from the outside for the purpose of starting the deposition process, an energization command is output so that the first heater 20 is at a predetermined (fixed) temperature, and the target heating temperature setting unit 42 is output. Send heating start signal.

(b) When the deposition end signal is input from the valve opening control device 29 or the deposition stop signal is input from the deterioration temperature detection unit 45, the heating stop signal is commanded to the target heating temperature setting unit 42. An energization stop command is output to the heater 20.

(Target heating temperature setting unit 42)

The target heating temperature setting unit 42 has the following function.

(a) When the sequence starter 41 inputs a heating start signal, the target heating temperature for the crucible 22 is set at a predetermined minimum temperature (for example, at a valve opening Z of about 70%) and a predetermined deposition rate (Re). ) Is set to the minimum temperature of the degree to be obtained.

(b) When the heating stop signal is input from the sequence section 41, the target heating temperature is set to a temperature at which the deposition material 24 does not evaporate.

(c) When the temperature of the crucible 22 detected by the temperature sensor 27 reaches or exceeds the predetermined minimum temperature, the valve opening degree output from the valve opening degree control device 29 is monitored for the presence of a sudden rise signal. And when the valve opening also inputs a sudden rise signal,

Target heating temperature = Target heating temperature + X (℃)

Reset to. The temperature X, which is an incremental value, is also based on the heating temperature of the deposition material-the deposition rate characteristic (varies depending on the deposition material), but is, for example, 3 ° C or lower (mostly 1 ° C). When the incremental temperature (rising temperature) X becomes too high, there are many cases in which the deposition rate changes abruptly, so that the deposition rate can be controlled by a valve.

(d) After resetting the target heating temperature, the monitoring of the presence of the sudden rise signal of the valve opening also stops for a predetermined time T (minutes), and the target temperature is not reset. This predetermined time T is appropriately set in consideration of the time required for the amount of heat added by the temperature X to spread evenly throughout the deposition material (approximately 1 minute).

Crucible temperature control unit 43

The crucible temperature control part 43 has the following functions.

(a) Deviation between the target heating temperature set by the target heating temperature setting unit 42 and the temperature of the crucible 22, and the amount of energization command (E) to the second heater 23 for crucible heating so as to eliminate the deviation. )

(b) When the deposition end signal is input by the valve opening control device 29 or the deposition stop signal is input by the deterioration temperature detection unit 45, the energization of the second heater 23 is stopped (power supply command E). To 0%).

(Low Temperature Reach Detection Unit 44)

When the temperature of the crucible 22 detected by the temperature sensor 27 reaches a predetermined minimum temperature by heating of the second heater 23, the minimum temperature reaching detection unit 44 stabilizes the temperature of the crucible 22. The valve opening degree control device 29 outputs a signal for reaching the minimum temperature of the deposition material 24.

(Degradation temperature detector 45)

The deterioration temperature detection unit 45 is configured such that the temperature of the crucible 22 detected by the temperature sensor 27 becomes equal to or higher than the deterioration temperature of the deposition material 24, and the valve opening degree control device 29 receives a sudden increase signal. When inputted, it is determined that the residue of the vapor deposition material 24 in the crucible 22 has disappeared. The vapor deposition stop signal is outputted to the sequencer 41, the crucible temperature control unit 43, the valve opening degree control device 29, and the outside.

[controller]

By this function, the valve opening degree control device 29 and the crucible heater control device 30 detects the deposition rate of the evaporated particles on the glass substrate 12 by the film thickness detected by the film thickness monitor 26. Then, the opening degree of the flow control valve 19 is adjusted so that the detected deposition rate becomes a predetermined deposition rate, and the temperature of the crucible 22 detected by the temperature sensor 27, that is, the heating temperature of the deposition material 24. The heating temperature of the crucible 22, that is, the heating temperature of the deposition material 24, is controlled by adjusting the amount of energization of the second heater 23 based on the above: In addition, the valve opening change rate ΔZ of the flow control valve 19 is controlled. When the valve opening change rate ΔZ is equal to or higher than the valve stability change rate ΔZ1 in a stable state at a predetermined deposition rate, the target set temperature of the crucible 22 is increased by X ° C. to deposit the vapor deposition material 24. ) And configure the controller "to increase the deposition amount.

[Operation at Deposition]

The operation at the time of vapor deposition according to the above configuration will be described with reference to FIGS. 4 and 5.

Step-1

When the vapor deposition start signal is input, the crucible heater control device 30 energizes the first heater 20 to heat up at least the downstream side from the flow rate control valve 19 to a predetermined temperature.

Step-2

The crucible heater control device 30 energizes the second heater 23 to heat up the crucible 22 to the predetermined minimum temperature.

Step-3

The crucible heater control device 30 confirms whether or not the temperature of the crucible 22 is stable at the lowest temperature.

Step-4

When the temperature of the crucible 22 is stable, the crucible heater control device 30 forms a minimum temperature arrival signal and outputs it to the valve opening degree control device 29. Accordingly, the valve opening control device 29 opens the flow control valve 19 to a predetermined opening degree (for example, 70%), and opens the shutter 18 when the flow control valve 19 opens to the predetermined opening degree. .

Step-5 and Step-6

The valve opening degree control device 29 adjusts the valve opening degree so that the deposition rate R in the current state becomes approximately a predetermined deposition rate Re.

As a result, as shown in the elapsed time [A-B] in FIG. 5, the deposition rate is stabilized, and the opening degree of the flow control valve 19 is gradually increased.

Step-7

The valve opening degree control device 29 grasps the valve stability change rate? Z1 when the deposition rate R in the current state becomes approximately the predetermined deposition rate Re and the deposition rate is stabilized.

Step-8

The valve opening degree control device 29 adjusts the valve opening degree so that the deposition rate R in the current state becomes approximately a predetermined deposition rate Re.

Step-9

The valve opening degree control device 29 confirms whether or not the deposition film thickness in the current state is equal to the deposition film thickness required, and if it is confirmed that it is the same, outputs a deposition end signal. As a result, the flow control valve 19 is completely closed, and power supply to the first heater 20 and the second heater 23 is stopped.

Step-10

If the deposited film thickness in the current state does not reach the required deposited film thickness in Step-9, the valve opening degree control device 29 calculates the valve opening change rate? Z.

As shown in the elapsed time BC of FIG. 5, when the deposition material 24 in the crucible 22 decreases, the evaporation amount of the deposition material 24 decreases, and correspondingly, the opening degree of the flow control valve 19 is abruptly corresponding. It becomes big.

Step-11

The valve opening control device 29 confirms whether or not the valve opening change rate? Z is significantly larger than the acquired valve stability change rate? Z1. Specifically, when the opening degree of the flow control valve 19 starts to rise rapidly as shown in the elapsed time BC of FIG. 5, that is, the valve opening change rate? Z is more rapidly than the acquired valve stability change rate? Z1. When it becomes large, the valve opening degree control device 29 outputs a valve opening sudden rise signal to the crucible heater control device 30. If this is not the case, the process returns to Step-8.

Step-12

The crucible heater control device 30 confirms whether or not the temperature of the crucible 22 is equal to or higher than the deterioration temperature of the vapor deposition material 24. And the crucible heater control device 30 is a flow rate control valve when the valve opening degree sudden increase signal is input from the valve opening degree control device 29 and the temperature of the crucible 22 is equal to or higher than the deterioration temperature of the deposition material 24. If 19 is further opened, it is determined that the remaining deposition material 24 is lost and a predetermined deposition rate Re cannot be obtained, and the valve opening also sends a deposition stop signal to the control device 29. As a result, the flow control valve 19 is completely closed and the feeding to the first heater 20 and the second heater 23 is stopped to stop the deposition. The situation at this time is shown in time [F] of FIG.

Step-13

When the temperature of the crucible 22 is less than the deterioration temperature of the vapor deposition material 24, the crucible heater control device 30 heats the crucible 22 as shown in time [C] and time [D] of FIG. The temperature is raised to X ° C (for example, 1 ° C), and the state is maintained for T minutes (for example, 1 minute). At this time, the valve opening degree control device 29 adjusts the valve opening degree so that the deposition rate R in the current state becomes approximately a predetermined deposition rate Re. Then return to step-10.

As shown in time [E] in FIG. 5 by performing these steps 11 to 13, if the change in valve opening degree is seen after T minutes from time D, the sudden change is not eliminated, that is, the valve opening change rate? Z If it is equal to or smaller than the valve stability change rate (DELTA Z1) determined in the section of this elapsed time [AB], vapor deposition is continued as it is, without changing the temperature of the crucible 22.

As described above, when the deposition starts at the minimum temperature required for the predetermined deposition rate Re and the valve opening change rate ΔZ rapidly increases, that is, the deposition rate is likely to decrease, the target heating temperature is sequentially X The deposition rate is increased by 占 폚 to maintain the deposition rate. Then, between the elapsed time [E-F] of FIG. 5, the monitoring of the opening degree of the flow control valve 19 and the determination of the necessity / unnecessity of the temperature rise of the crucible 22 are repeated.

As described above, according to the present embodiment, if the valve opening change rate ΔZ exceeds the valve stability change rate ΔZ1, that is, the crucible 22 is deposited at the temperature of the minimum crucible 22 required for the predetermined deposition rate Re. The amount of vapor deposition material 24 in the container is reduced so that the amount of evaporation of the vapor deposition material 24 from the crucible 22 (that is, the amount of evaporated particles to be supplied from the crucible 22) is reduced, thereby lowering the deposition rate. When the opening degree of the flow control valve 19 is rapidly increased to maintain the predetermined deposition rate, the target temperature of the crucible 22 is increased by X ° C. and the deposition material 24 from the crucible 22 is increased. The evaporation amount of will increase. As a result, it is possible to maintain the predetermined deposition rate Re, and to avoid the inability to adjust the opening degree of the flow rate control valve 19 for the predetermined deposition rate Re. In addition, since the target temperature is increased by a predetermined temperature X ° C., the thermal deterioration of the deposition material 24 can be prevented, and the deposition material 24 can be used to the end. Therefore, the deposition material 24 can be used. Residue can be minimized. In addition, if the temperature of the crucible 22 is made high from the beginning to increase the evaporation amount of the vapor deposition material 24, thermal deterioration occurs in the vapor deposition material 24, and the desired characteristics of the vapor deposition material 24 are not obtained.

According to the present embodiment, when the temperature of the crucible 22 is increased by X ° C., the temperature is maintained for a predetermined time (T minutes), so that the evaporation amount of the vapor deposition material 24 due to the late rise of the temperature of the vapor deposition material 24. Is expected to change. As such, the evaporation amount of the deposition material 24 corresponding to the rise of the temperature X ° C. of the crucible 22 increases at a predetermined time (T minutes), so that the valve opening change rate ΔZ of the flow control valve 19 becomes small. Alternatively, the flow control valve 19 changes in the closing direction. If the increase in the evaporation amount of the vapor deposition material 24 due to the temperature rise of the crucible 22 is insufficient, the valve opening change rate? Z exceeds the valve stability change rate? Z1 and the temperature of the crucible 22 is increased by X ° C. As a result, the temperature of the crucible 22 is raised step by step at every X ° C.

According to the present embodiment, first, in the initial state, the temperature of the crucible 22 is raised to the minimum temperature, that is, the minimum temperature at which the predetermined deposition rate Re is obtained at the valve opening degree Z = 70%. In the state, the flow rate control valve 19 is opened up to 70% of the opening degree, and then the opening degree adjustment of the flow rate control valve 19 to obtain the predetermined deposition rate Re is started. That is, the deposition material 24 can be used effectively and to the end by starting deposition at the minimum temperature of the crucible 22 required for the predetermined deposition rate.

In this embodiment, although an up blow type (up deposition) for depositing evaporated particles from below is formed on the lower surface (deposited surface) of the glass substrate 12 supported by the work support 15, the deposition direction It is also possible to have a configuration in which the direction of? Is not selected, that is, a configuration of side-deposition or down-deposition.

11: vacuum chamber
12: glass substrate
13: deposition chamber
15: work support
17 material transport pipe
17a: opening
18: Shutter
19: flow control valve
20: first heater
22: Crucible
23: second heater
24: evaporation material
26: film thickness monitor
27: temperature sensor
29: valve opening control device
30: crucible heater controller
31: deposition rate detection unit
32: deposition end detection unit
33: valve opening degree control
34: shutter opening and closing portion
35: valve opening change rate detection unit
36: valve stability change rate detection unit
37: valve opening sudden rise detection unit
41: sequence portion
42: target heating temperature setting unit
43: crucible temperature control unit
44: minimum temperature detection unit
45: deterioration temperature detection unit
Re: Deposition Rate
L: Valve opening command
Z: Valve Opening
ΔZ: Valve opening change rate
ΔZ1: Valve Stability Change Rate

Claims (4)

A vapor deposition apparatus for attaching evaporated vapor deposition material to a member to be deposited in a vacuum chamber,
A crucible for heating and evaporating the deposition material;
A path for guiding the vapor deposition material evaporated by the crucible to the deposition member in the vacuum chamber,
A temperature sensor for detecting the temperature of the crucible is provided,
In the path, a valve having an opening degree adjustment function is provided,
In the vacuum chamber, a film thickness monitor for detecting the film thickness of the member to be deposited is provided,
The deposition rate of the member to be deposited is detected by the film thickness detected by the film thickness monitor, and the opening degree of the valve is adjusted while adjusting the opening degree of the valve so that the deposition rate becomes a predetermined deposition rate. A controller that detects a rate of change of the crucible and increases the deposition temperature of the deposition material by raising the set temperature of the crucible by an incremental value if the rate of change exceeds the rate of change of stability in a stable state at a predetermined deposition rate. Deposition apparatus, characterized in that installed (controller).
The method of claim 1,
When the controller performs a process of raising the set temperature of the crucible by an incremental value, the controller adjusts the opening degree of the valve while maintaining the elevated set temperature for a predetermined time, and after the predetermined time elapses, the rate of change of the opening degree of the valve exceeds a stable change rate. And, when present, further raises the set temperature of the crucible by the increment value.
3. The method according to claim 1 or 2,
The controller raises the set temperature of the crucible with the valve closed to a minimum temperature at which the valve obtains a predetermined deposition rate at a predetermined opening degree, and sets the valve opening degree when the detection temperature of the crucible rises to this minimum temperature. Opening up to, the deposition apparatus characterized in that to start the opening degree control of the valve to obtain a predetermined deposition rate.
4. The method according to any one of claims 1 to 3,
And the controller terminates evaporation of the deposition material by the crucible when the valve is further opened when the detection temperature of the crucible rises to the deterioration temperature of the deposition material.

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