JP5840055B2 - Vapor deposition equipment - Google Patents

Description

  The present invention relates to a vapor deposition apparatus used for vapor deposition of metal thin films, organic material thin films, metal electrode wirings such as solar cells and display panels, and organic EL light emitting layers.

In general, vapor deposition used for forming the thin film or the like is performed in a high vacuum of 10 ⁻⁴ Pa or higher. For example, in the vacuum deposition apparatus shown in Patent Document 1, a crucible containing a deposition material around which an electric heater is wound and a deposition substrate are installed in a vacuum chamber (vacuum vessel), and the formation of the thin film is performed in the vacuum chamber. After the vacuum is evacuated to the above-mentioned high vacuum, the crucible is heated by an electric heater to melt and evaporate the vapor deposition material in the crucible and adhere to the vapor deposition substrate. The deposition rate on the substrate to be deposited (the amount of deposition material deposited per unit time) is normally controlled by the heating temperature of the crucible, but even if the crucible temperature is stable, the deposition material in the crucible is heated. The deposition rate is difficult to stabilize because the temperature is gradually transmitted by conduction or the like. Therefore, for example, as disclosed in Patent Document 2, a flow rate adjustment valve is inserted in the path of the evaporated molecules, and a signal from a film thickness sensor (film thickness meter) installed near the substrate is fed back to the flow rate adjustment valve. This stabilizes the vapor deposition rate.

JP 2004-91858 A JP 2010-242202 A

  The method using the flow rate adjusting valve has the characteristics that the evaporation rate can be stably maintained and the material in the crucible can be used up to the minimum because it is controlled by the valve even if the crucible temperature is increased and the evaporation amount is increased. When heated at a high temperature for a long time, in the case of a vapor deposition material that is weak against heat, there arises a problem that the material characteristics cannot be obtained due to thermal degradation. Conversely, when the crucible temperature is low, the amount of evaporation of the vapor deposition material decreases, and even when a flow rate adjustment valve is used, it becomes difficult to stably maintain a predetermined vapor deposition rate for a long time, Furthermore, there is a problem that the material remaining in the crucible increases and the vapor deposition material is wasted.

  Accordingly, an object of the present invention is to provide a vapor deposition apparatus that can prevent thermal degradation of the vapor deposition material and minimize the residual of the vapor deposition material.

  In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention is a vapor deposition apparatus for adhering an evaporated vapor deposition material to a vapor deposition member in a vacuum chamber, and heating the vapor deposition material. A crucible to be evaporated and a path for guiding the vapor deposition material evaporated by the crucible to the deposition target member in the vacuum chamber, and a valve for adjusting an opening degree of the path is provided in the path, A film thickness monitor for detecting the film thickness of the vapor-deposited member, and a temperature sensor for detecting the temperature of the crucible is provided in the crucible. The film thickness of the vapor-deposited member is determined by the film thickness detected by the film thickness monitor. The deposition rate is detected, and the opening degree of the valve is adjusted so that the deposition rate becomes a predetermined deposition rate, and the rate of change of the opening degree of the valve is detected. In a stable state A controller is provided for increasing the deposition amount of the deposition material by raising the temperature of the crucible by a predetermined temperature while feeding back the temperature of the crucible detected by the temperature sensor when the rate of change is greater than or equal to the stable change rate. To do.

  According to the said structure, the vapor deposition rate of a vapor deposition member is detected by the film thickness detected by the film thickness monitor, and the opening degree of a valve | bulb is adjusted so that this vapor deposition rate may become a predetermined vapor deposition rate. When the amount of vapor deposition material in the crucible decreases, the amount of evaporation decreases, so that the valve opening is largely adjusted to maintain a predetermined vapor deposition rate, and the rate of change of the valve opening is greater than the stable rate of change. Then, the temperature of the crucible is increased by a predetermined temperature, and the evaporation amount of the vapor deposition material from the crucible is increased. As a result, it is possible to prevent the valve opening degree from being adjusted to a predetermined vapor deposition rate, and to prevent the thermal degradation of the vapor deposition material by increasing the temperature by a predetermined temperature, and to minimize the residue of the vapor deposition material. It becomes possible to.

  The invention according to claim 2 is the invention according to claim 1, wherein when the temperature of the crucible rises by a predetermined temperature, the controller maintains the temperature for a predetermined time to adjust the opening of the valve. When the rate of change of the valve opening is equal to or greater than the stable rate of change after the predetermined time has elapsed, the temperature of the crucible is further increased by the predetermined temperature.

  According to the above configuration, when the temperature of the crucible is increased by a predetermined temperature, this temperature is maintained for a certain time, and within this certain time, the temperature of the crucible is delayed and rises by a predetermined temperature, and the evaporation amount of the vapor deposition material from the crucible is reduced. Increase with a delay. As described above, the evaporation amount of the vapor deposition material corresponding to the predetermined temperature rise increases in a certain time, and thus the rate of change of the valve opening decreases or the valve changes in the closing direction. If the increase in the evaporation amount of the vapor deposition material due to the rise is insufficient, the rate of change in the opening of the valve becomes equal to or greater than the rate of stable change, and the temperature of the crucible is further increased by the predetermined temperature. Every step is raised.

  The invention according to claim 3 is the invention according to claim 1 or 2, wherein the controller sets the temperature of the crucible in a state in which the valve is closed, and the valve has a predetermined opening degree. The temperature is raised to the lowest temperature at which the predetermined vapor deposition rate can be obtained, and when the temperature rises to the lowest temperature, the valve is opened to the predetermined opening, and the valve opening adjustment for obtaining the predetermined vapor deposition rate is started. It is a feature.

  According to the above configuration, first, in the initial state, the temperature of the crucible is raised to the lowest temperature at which the valve can obtain a predetermined vapor deposition rate at a predetermined opening, and in this state, the valve is opened to the predetermined opening. Then, the valve opening degree adjustment for obtaining a predetermined deposition rate is started. Thus, it becomes possible to use the vapor deposition material effectively and to the end by starting vapor deposition from the lowest temperature. Note that when the temperature of the crucible is increased from the beginning to increase the evaporation amount of the vapor deposition material, thermal degradation occurs and the characteristics of the vapor deposition material cannot be obtained.

  The invention according to claim 4 is the invention according to any one of claims 1 to 3, wherein the controller is configured such that the temperature of the crucible detected by the temperature sensor is the deposition material. When the temperature rises to the deterioration temperature and the valve is further opened, evaporation of the vapor deposition material by the crucible is terminated.

  According to the above configuration, when the temperature of the crucible rises to the deterioration temperature of the vapor deposition material and the valve is further opened in this state, it is determined that a predetermined vapor deposition rate cannot be obtained, and vapor deposition is terminated.

  In the vapor deposition apparatus of the present invention, when the rate of change of the opening degree of the valve becomes equal to or greater than the rate of stable change, the temperature of the crucible is increased by a predetermined temperature, and the evaporation amount of the vapor deposition material from the crucible is increased. Therefore, it is possible to avoid the possibility of adjusting the opening of the valve, and to prevent the thermal degradation of the vapor deposition material by increasing the temperature by a predetermined temperature and minimizing the residual of the vapor deposition material. doing.

It is a block diagram of the vapor deposition apparatus in embodiment of this invention. It is a control block diagram of the valve opening degree control apparatus of the vapor deposition apparatus. It is a control block diagram of the crucible heater control device of the vapor deposition device. It is a flowchart explaining operation | movement of the vapor deposition apparatus. It is a figure which shows the characteristic of the vapor deposition rate in this vapor deposition apparatus, the crucible temperature, and the valve opening degree.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a configuration diagram of a vapor deposition apparatus according to an embodiment of the present invention. As shown in FIG. 1, a glass substrate (deposition target member) is placed in a vacuum chamber (vacuum tank / deposition vessel) 11 in a vacuum atmosphere. Example) A vapor deposition chamber 13 for vaporizing evaporated particles {evaporated vapor deposition material (for example, organic EL material)} is provided on the surface (lower surface) of 12, and a vacuum unit (not shown) is provided in the vacuum chamber 11. ) To form a vacuum port 14 for making a vacuum atmosphere. A work holder 15 for holding the glass substrate 12 is provided on the upper portion of the vacuum chamber 11, and evaporated particles are deposited on the lower surface (deposition surface) of the glass substrate 12 held by the work holder 15 from below. It is configured as an up-blow type (up-depot).

  Below the vacuum chamber 11 is a material transport pipe (an example of a path for guiding the evaporated particles to the glass substrate) 17 in which the opening 17a is arranged to face the lower surface of the glass substrate 12 and guides the evaporated particles to the glass substrate 12. A shutter 18 that prevents evaporation particles from reaching the glass substrate 12 is provided between the opening 17 a of the material transport pipe 17 and the work holder 15.

  The material transport pipe 17 has a flow rate control valve (an example of a valve for adjusting the opening degree of the path; a control valve) 19 that controls the flow rate of the evaporated particles by adjusting the opening degree to the outside of the vacuum chamber 11. Is provided. A first heater 20 is wound around the material transport pipe 17 and the flow rate control valve 19, and is heated to a temperature higher than the ambient temperature by energizing the first heater 20.

  Further, outside the vacuum chamber 11, a crucible (material storage container) 22 is provided at the upstream end of the material transport pipe 17, and a second heater (crucible heater) 23 is wound around the crucible 22. The vapor deposition material 24 accommodated in the crucible 22 is heated by energizing to form evaporated particles, and the formed evaporated particles are supplied to the material transport pipe 17.

The vapor deposition chamber 13 is provided with a film thickness monitor 26 that detects the film thickness of the vapor deposition material deposited on the glass substrate 12 in the vicinity of the work holder 15, and the crucible 22 detects the temperature of the crucible 22. A temperature sensor 27 is provided.
Further, a valve opening control device 29 and a crucible heater control device 30 are provided outside the vacuum chamber 11.

"Valve opening control device 29"
First, the valve opening control device 29 will be described.
A film thickness detected by the film thickness monitor 26 is input to the valve opening control device 29, and a minimum temperature reaching signal and a vapor deposition stop signal (described later) of the vapor deposition material 24 output from the crucible heater control device 30 are input. Has been. Further, the valve opening degree control device 29 outputs a valve opening degree command L (an electric signal corresponding to 0 to 100% of the valve opening degree) to the flow rate control valve 19, and a change rate rapid increase signal and a crucible heater control device 30. A vapor deposition end signal (described later) is output, an open / close command signal for the shutter 18 is output, and a vapor deposition end signal is output to the outside (such as a host computer that manages the vapor deposition process).

  As shown in FIG. 2, the valve opening degree control device 29 includes a deposition rate detection unit 31 that obtains a deposition rate R of evaporated particles on the glass substrate 12 from a change in the thickness input from the thickness monitor 26, and a film thickness. When the film thickness input from the monitor 26 reaches a predetermined vapor deposition film thickness, a vapor deposition end signal is output to the crucible heater control device 30, the valve opening control unit 33, the vapor deposition completion detection unit 32, and the valve opening control. It comprises a part 33, a shutter opening / closing part 34, a valve opening change rate detection part 35, a valve stable change rate detection part 36, and a valve opening rapid increase detection part 37.

“Valve Opening Control Unit 33”
The valve opening degree control unit 33 has the following functions.
When the minimum temperature reaching signal of the vapor deposition material 24 is not input from the crucible heater control device 30, or when the vapor deposition stop signal is input, or when the vapor deposition end signal is input from the vapor deposition end detection unit 32, the flow control valve 19 A valve opening command L (electrical signal corresponding to 0% valve opening) is output to fully close the valve.
When a signal for reaching the minimum temperature of the vapor deposition material 24 is input from the crucible heater control device 30, a valve opening command L for gradually opening the valve to a predetermined opening (for example, 70%) is output to the flow control valve 19.
When the flow rate control valve 19 is opened to the predetermined opening (when the valve opening command L reaches a predetermined opening), a predetermined vapor deposition rate Re set in advance and the vapor deposition rate obtained by the vapor deposition rate detection unit 31 A deviation from R is obtained, and the valve opening command L is adjusted so as to eliminate this deviation.

“Shutter Open / Close Unit 34”
The shutter opening / closing unit 34 confirms the opening of the flow control valve 19 based on the valve opening command L, and fully closes the shutter 18 when the opening of the flow control valve 19 is less than the predetermined opening (for example, 70%). When the predetermined opening (for example, 70%) is reached, the shutter 18 is fully opened.

"Valve opening rate change rate detector 35"
The valve opening change rate detector 35 obtains a change in valve opening per unit time (abbreviated as valve opening change rate) ΔZ based on the valve opening command L.
ΔZ ← Z / t
Where Z: valve opening
t: Elapsed time

“Valve stable change rate detector 36”
The valve stable change rate detection unit 36 receives a valve opening command input from the valve opening control unit 33 when the deposition rate R detected by the deposition rate detection unit 31 becomes stable at a predetermined deposition rate. A change in valve opening per unit time (abbreviated as “valve stable change rate”) ΔZ1 is obtained from L.
ΔZ1 ← Z1 / t1
Here, Z1: valve opening when the deposition rate is stable
t1: Elapsed time when deposition rate is stable

“Valve Opening Rapid Detection Unit 37”
The valve opening rapid increase detector 37 detects that the valve opening change rate ΔZ detected by the valve opening change rate detector 35 increases more rapidly than the valve stable change rate ΔZ1 detected by the valve stable change rate detector 36. Then (ΔZ >> ΔZ1), a change rate rapid increase signal is output to the crucible heater control device 30. For example, depending on the valve opening-deposition rate characteristic (which varies depending on the deposition material), when the valve stable change rate ΔZ1 = 1 and the valve opening change rate ΔZ = 2 or more, a change rate rapid increase signal is output.

"Crucible heater control device 30"
Next, the crucible heater control device 30 will be described.
The temperature of the crucible 22 detected by the temperature sensor 27, that is, the temperature of the vapor deposition material 24 is input to the crucible heater control device 30, and the change rate rapid increase signal and the vapor deposition end signal output from the valve opening control device 29 are input. Further, a vapor deposition start signal is inputted from the outside. Further, the crucible heater control device 30 outputs a minimum temperature reaching signal and a vapor deposition end signal of the vapor deposition material 24 to the valve opening control device 29, and an energization command and an energization stop command for setting a predetermined (fixed) temperature to the first heater 20 are provided. In addition, an energization amount command E (an electric signal corresponding to an energization amount of 0 to 100%) is output to the second heater 23, and a vapor deposition stop signal is output to the outside.

  As shown in FIG. 3, the crucible heater control device 30 includes a sequence unit 41, a target heating temperature setting unit 42 for the crucible 22, a crucible temperature control unit 43, a minimum temperature arrival detection unit 44, and a deterioration temperature detection unit 45. It is composed of

“Sequence part 41”
The sequence unit 41 has the following functions.
When an evaporation start signal is input from the outside, an energization command is output so that the first heater 20 reaches a predetermined (fixed) temperature, and a heating start signal is commanded to the target heating temperature setting unit 42.
When a vapor deposition end signal is input from the valve opening control device 29 or a vapor deposition stop signal described later is input from the deterioration temperature detection unit 45, a heating end signal is instructed to the target heating temperature setting unit 42, and the first heater 20 is instructed. Outputs a power stop command.

"Target heating temperature setting unit 42"
The target heating temperature setting unit 42 has the following functions.
When the heating start signal is input from the sequence unit 41, the target heating temperature of the crucible 22 is set to a predetermined minimum temperature (for example, a minimum value such that a predetermined vapor deposition rate Re is obtained at a valve opening Z = about 70%). Limit temperature).
When a heating end signal is input from the sequence unit 41, the target heating temperature is set to a temperature at which the vapor deposition material 24 does not evaporate.
When the temperature of the crucible 22 detected by the temperature sensor 27 is equal to or higher than the predetermined minimum temperature, the change rate rapid increase signal output from the valve opening control device 29 is monitored, and the change rate rapid increase signal is input. ,
Target heating temperature = Target heating temperature + X (° C)
Reset to. X is a predetermined temperature and is, for example, 3 ° C. or less (generally 1 ° C.), although it depends on the heating temperature-deposition rate characteristics (varies depending on the deposition material) of the deposition material. When the predetermined temperature (increased temperature) X becomes too high, the deposition rate often changes abruptly, and the deposition rate cannot be controlled by a valve.
-After resetting the target heating temperature, the monitoring of the change rate rapid increase signal is stopped for a predetermined time T (minutes), and the target temperature is not reset. The predetermined time T is appropriately set in consideration of the necessity for the amount of heat added at the predetermined temperature X to reach the entire deposition material (approximately 1 minute).

"Crucible temperature controller 43"
The crucible temperature control unit 43 has the following functions.
A deviation between the target heating temperature set by the target heating temperature setting unit 42 and the temperature of the crucible 22 is obtained, and an energization amount command E is output to the second heater 23 so as to eliminate this deviation.
When the vapor deposition end signal is input from the valve opening control device 29 or the vapor deposition stop signal described later is input from the deterioration temperature detector 45, the energization of the second heater 23 is stopped (the energization amount command E is set to 0%). ).

“Minimum temperature detection unit 44”
When the temperature of the crucible 22 detected by the temperature sensor 27 becomes the minimum temperature and the temperature of the crucible 22 is stabilized, the minimum temperature arrival detection unit 44 outputs a minimum temperature arrival signal of the vapor deposition material 24 to the valve opening degree control device 29. .

"Deterioration temperature detector 45"
When the temperature of the crucible 22 detected by the temperature sensor 27 is equal to or higher than the deterioration temperature of the vapor deposition material 24 and a change rate rapid increase signal is input from the valve opening degree control device 29, the deterioration temperature detection unit 45 receives the vapor deposition material 24. The vapor deposition is stopped when it is determined that there is no residue, and a vapor deposition stop signal is output to the sequence unit 41, the crucible temperature control unit 43, the valve opening control device 29, and the outside.

  With such a function, the valve opening control device 29 and the crucible heater control device 30 detect “the deposition rate of the evaporated particles on the glass substrate 12 based on the film thickness detected by the film thickness monitor 26, and the detected deposition rate is The opening amount of the flow control valve 19 is adjusted so that a predetermined vapor deposition rate is obtained, and the energization amount of the second heater 23 is based on the temperature of the crucible 22 detected by the temperature sensor 27, that is, the heating temperature of the vapor deposition material 24. Is adjusted to control the heating temperature of the crucible 22, that is, the heating temperature of the vapor deposition material 24, and the valve opening change rate ΔZ of the flow rate control valve 19 is detected. When the valve stable change rate ΔZ1 or more in a stable state is reached, the target temperature of the crucible 22 is increased by a predetermined temperature (X ° C.) and the deposition amount of the deposition material 24 is increased. Constitute a controller ".

The operation at the time of vapor deposition with the above configuration will be described with reference to FIGS.
Step-1
When the vapor deposition start signal is input, first, the crucible heater control device 30 energizes the first heater 20 to raise the temperature of at least the downstream side from the flow rate control valve 19 to a predetermined temperature.
Step-2
Next, the crucible heater control device 30 energizes the second heater 23 to raise the temperature of the crucible 22 to the predetermined minimum temperature.
Step-3
Next, the crucible heater control device 30 confirms whether the temperature of the crucible 22 is stable at the minimum temperature.
Step-4
When the temperature of the crucible 22 is stable, the crucible heater control device 30 forms a minimum temperature reaching signal and outputs the signal to the valve opening control device 29, whereby the valve opening control device 29 causes the flow rate control valve 19. Is opened to a predetermined opening (for example, 70%), and when the flow control valve 19 is opened to the predetermined opening, the shutter 18 is fully opened.
Step-5, 6
The valve opening control device 29 adjusts the valve opening so that the current vapor deposition rate≈the predetermined vapor deposition rate.
Thereby, as shown to [AB] of FIG. 5, a vapor deposition rate is stabilized and the opening degree of the flow control valve 19 becomes large gradually.

Step-7
The valve opening control device 29 grasps the valve stable change rate ΔZ1 when the current vapor deposition rate is equal to the predetermined vapor deposition rate and the vapor deposition rate is stable. (This relationship differs depending on the vapor deposition material 24.)
Step-8
The valve opening control device 29 adjusts the valve opening so that the current vapor deposition rate≈the predetermined vapor deposition rate.
Step-9
The valve opening degree control device 29 confirms whether or not the current deposited film thickness = the predetermined deposited film thickness, and outputs a vapor deposition end signal when confirmed. As a result, the flow control valve 19 is fully closed, and power supply to the first heater 20 and the second heater 23 is stopped.
Step-10
The valve opening control device 29 obtains a valve opening change rate ΔZ.
As shown in [BC] in FIG. 5, when the vapor deposition material 24 in the crucible 22 decreases, the evaporation amount of the vapor deposition material 24 decreases, and the opening degree of the flow control valve 19 increases rapidly.

Step-11
The valve opening degree control device 29 confirms whether or not the valve opening degree change rate ΔZ has suddenly increased from the acquired valve stable change rate ΔZ1.
Step-12
The crucible heater control device 30 confirms whether the temperature of the crucible 22 is equal to or higher than the deterioration temperature of the vapor deposition material 24, and as shown in [F] of FIG. (When the valve opening change rate ΔZ suddenly becomes larger than the acquired valve stable change rate ΔZ1), that is, when the flow control valve 19 is further opened, the evaporation material 24 does not remain, and a predetermined evaporation rate is obtained. Determining that it is not possible to stop vapor deposition. As a result, the flow control valve 19 is fully closed, and power supply to the first heater 20 and the second heater 23 is stopped.

Step-13
When the temperature of the crucible 22 is lower than the deterioration temperature of the vapor deposition material 24, the crucible heater controller 30 increases the heating temperature of the crucible 22 by X (1 ° C.) as shown in [C] and [D] of FIG. The valve opening degree control device 29 adjusts the valve opening degree so that the current vapor deposition rate≈predetermined vapor deposition rate.

  As shown in [E] of FIG. 5, by these steps 11 to 13, when a change amount of the valve opening is observed after T minutes (1 minute) from [D], if there is no sudden change (valve) When the opening degree change rate ΔZ is equal to or smaller than the valve stable change rate ΔZ1 obtained in the section [AB], the temperature of the crucible 22 is not changed and the deposition is continued as it is.

  As described above, when the vapor deposition is started at the minimum temperature necessary for the predetermined vapor deposition rate Re and the valve opening change rate ΔZ suddenly increases, that is, when the vapor deposition rate is likely to decrease, the target heating temperature is successively set to the predetermined temperature. The temperature is raised by X ° C., and the deposition rate is maintained. Then, as shown in [E-F] in FIG. 5, the monitoring of the opening degree of the flow control valve 19 and the necessity determination of the temperature rise of the crucible 22 are repeated.

  As described above, according to the present embodiment, vapor deposition is performed at the minimum crucible 22 temperature necessary for a predetermined vapor deposition rate Re, and when the valve opening change rate ΔZ is equal to or higher than the valve stable change rate ΔZ1, that is, The vapor deposition material 24 in the crucible 22 is reduced, the evaporation amount of the vapor deposition material 24 from the crucible 22 (formation of evaporated particles supplied from the crucible 22) is reduced, the vapor deposition rate is lowered, and the predetermined vapor deposition rate is maintained. When the opening degree of the flow control valve 19 increases rapidly, the target temperature of the crucible 22 is increased by a predetermined temperature X ° C., and the evaporation amount of the vapor deposition material 24 from the crucible 22 is increased, thereby maintaining a predetermined vapor deposition rate. In addition, it is possible to avoid the adjustment of the opening degree of the flow rate control valve 19 at the predetermined deposition rate Re, and to increase the target temperature by a predetermined temperature X ° C. The deposition material 24 can be prevented from being thermally deteriorated, and the vapor deposition material 24 can be used to the end, so that the residue of the vapor deposition material 24 can be minimized. Note that when the temperature of the crucible 22 is increased from the beginning to increase the evaporation amount of the vapor deposition material 24, thermal degradation occurs and the characteristics of the vapor deposition material 24 cannot be obtained.

  Further, according to the present embodiment, when the temperature of the crucible 22 is increased by a predetermined temperature X ° C., this temperature is maintained for a certain period of time (T minutes), so that the temperature of the vapor deposition material 24 increases with a delay. A change in the evaporation amount of the material 24 is awaited. Thus, in a certain time (T minutes), the evaporation amount of the vapor deposition material 24 corresponding to the increase in the temperature of the crucible 22 by the predetermined temperature X ° C. increases, and thus the valve opening change rate ΔZ of the flow control valve 19 decreases. Alternatively, the flow rate control valve 19 changes in the closing direction, but if the increase in the evaporation amount of the vapor deposition material 24 due to the temperature rise of the crucible 22 is insufficient, the valve opening change rate ΔZ becomes the valve stable change rate ΔZ1 or more, Further, the temperature of the crucible 22 is increased by the predetermined temperature X ° C., whereby the temperature of the crucible 22 is increased stepwise for each predetermined temperature X ° C.

  According to the present embodiment, first, in the initial state, the temperature of the crucible 22 is raised to a minimum temperature (minimum temperature) at which a predetermined deposition rate Re can be obtained with a valve opening degree Z = about 70%. In this state, the flow control valve 19 is opened to the predetermined 70%, and the opening degree adjustment of the flow control valve 19 to obtain a predetermined vapor deposition rate is started, that is, the minimum crucible necessary for the predetermined vapor deposition rate. By starting the vapor deposition from the temperature of 22, the vapor deposition material 24 can be used effectively and to the end.

  In the present embodiment, the up-blow type (up-deposition) is used to deposit evaporated particles from below on the lower surface (deposition surface) of the glass substrate 12 held by the work holder 15. It is also possible to adopt a configuration that does not select any one, that is, a side depot or down depot configuration.

DESCRIPTION OF SYMBOLS 11 Vacuum chamber 12 Glass substrate 13 Deposition chamber 17 Material transport pipe 18 Shutter 19 Flow control valve 20 1st heater 22 Crucible 23 2nd heater 24 Deposition material 26 Film thickness monitor 27 Temperature sensor 29 Valve opening control device 30 Crucible heater control device

Claims (4)

In a vacuum chamber, a vapor deposition apparatus that attaches an evaporated vapor deposition material to a vapor deposition member,
A crucible for heating and evaporating the vapor deposition material;
A path for guiding the vapor deposition material evaporated by the crucible to the vapor deposition member in the vacuum chamber;
In the path, a valve for adjusting the opening of the path is provided,
In the vacuum chamber, a film thickness monitor for detecting the film thickness of the vapor deposition member is provided,
The crucible is provided with a temperature sensor for detecting the temperature of the crucible,
The deposition rate of the deposition target member is detected based on the film thickness detected by the film thickness monitor, and the opening of the valve is adjusted so that the deposition rate becomes a predetermined deposition rate. The rate of change is detected, and when the rate of change exceeds the stable rate of change in a stable state at a predetermined deposition rate, the temperature of the crucible is increased by a predetermined temperature while feeding back the temperature of the crucible detected by the temperature sensor. And a controller for increasing a deposition amount of the deposition material. When the temperature of the crucible rises by a predetermined temperature, the controller maintains the temperature for a certain period of time to adjust the opening of the valve, and after the lapse of the certain period of time, the rate of change of the opening of the valve becomes the stable rate of change. 2. The vapor deposition apparatus according to claim 1, wherein the temperature of the crucible is further increased by the predetermined temperature when the above is reached. With the valve closed, the controller raises the temperature of the crucible to a minimum temperature at which the valve can obtain the predetermined deposition rate at a predetermined opening, and when the temperature rises to the minimum temperature, The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus opens to the predetermined opening degree and starts adjusting a valve opening degree to obtain the predetermined vapor deposition rate. The controller ends evaporation of the vapor deposition material by the crucible when the temperature of the crucible detected by the temperature sensor rises to a deterioration temperature of the vapor deposition material and the valve is further opened. The vapor deposition apparatus of any one of Claims 1-3.

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