JP5414587B2 - Vapor deposition equipment - Google Patents

Description

  The present invention relates to a vapor deposition apparatus for depositing a vapor deposition material such as a metal material or an organic material on the surface of a glass substrate, for example.

  When manufacturing a display or the like, a thin film is formed by depositing a vapor deposition material such as a metal material or an organic material on the surface of a glass substrate. Conventionally, when such a thin film is formed, evaporation of the vapor deposition material is performed. Vapor deposition apparatuses having a chamber and a vapor deposition chamber for evaporated vapor deposition material are used.

  That is, this vapor deposition apparatus accommodates an organic material that is a vapor deposition material, heats the organic material as an evaporation source, and vaporizes the organic material, and accommodates the crucible above the crucible. A vapor deposition chamber for vapor-depositing an organic material on a glass substrate, and a high-frequency power source for heating a metal crucible is provided outside the vapor deposition chamber, and an electric wire from the high-frequency power source is dielectrically formed on the outer peripheral surface of the crucible. It arrange | positions as a coil and heats a crucible with a dielectric current (for example, refer patent document 1).

  In the above configuration, when an organic material (evaporation material) is deposited, the inside of the deposition chamber is brought into a predetermined vacuum state, and a metal crucible is dielectrically heated by a high frequency power source to evaporate the organic material contained in the crucible. And deposited on a glass substrate.

JP 2004-134250 A

  By the way, in order to increase the deposition rate, it is generally only necessary to increase the heating temperature of the crucible containing the organic material (deposition material). However, if the organic material (deposition material) is kept at a high temperature for a long time, the property deteriorates. was there. In addition, when the properties of the organic material (vapor deposition material) deteriorate, the vapor deposition rate decreases, and there is a problem that a sufficient vapor deposition rate cannot be obtained.

  Then, an object of this invention is to provide the vapor deposition apparatus which suppresses deterioration of the property of vapor deposition material and can obtain sufficient vapor deposition rate.

In order to solve the above-mentioned problem, a vapor deposition apparatus according to claim 1 of the present invention is disposed above an evaporation container for evaporating vapor deposition material filled in the container body, and is evaporated while being disposed above the evaporation container. A vapor deposition apparatus comprising: a vapor deposition container that guides a vapor deposition material through a communicating portion and deposits the vapor deposition material on a member to be deposited; and an adjusting unit that is disposed in the communication portion and adjusts a passing amount of the evaporated vapor deposition material.
Above the inside of the container body of the evaporation container, a partition member that can be partitioned into an upper space portion and a lower space portion leaving a part of the communication space,
A lower heating means capable of heating the vapor deposition material in the lower space portion is disposed on the lower surface side of the partition member, and moved from the lower space portion to the upper space portion via the communication space on the upper surface side of the partition member. A cooling means capable of cooling the vapor deposition material and an upper heating means capable of heating and evaporating the vapor deposition material attached to the upper surface of the partition member are arranged.

The vapor deposition apparatus according to claim 2 has a plurality of evaporation containers for evaporating the vapor deposition material filled in the container body, and is disposed above the evaporation containers and communicates the vaporized vapor deposition materials. A vapor deposition apparatus comprising: a vapor deposition container that is guided through the unit and vapor-deposited on the vapor-deposited member; and an adjusting unit that is disposed in the communication unit and adjusts a passage amount of each vapor-deposited material,
A partition member that can be partitioned into an upper space portion and a lower space portion while leaving a part of the communication space above the inside of the container body of each of the evaporation containers,
Lower heating means capable of heating each vapor deposition material in the lower space portion is disposed on the lower surface side of each partition member, and the upper space is disposed on the upper surface side of each partition member from the lower space portion via the communication space. A cooling means for cooling each vapor deposition material moved into the part and an upper heating means for heating and vaporizing each vapor deposition material adhering to the upper surface of the partition member are arranged.

  Furthermore, the vapor deposition apparatus according to claim 3 is the vapor deposition apparatus according to claim 1 or 2, wherein the partition member is formed in an annular shape protruding inward from the inner peripheral wall surface of the container body of the evaporation container. is there.

  According to the vapor deposition apparatus, not all the vapor deposition material in the container body is heated for vapor deposition, but the vapor deposition material is heated to vapor deposition after being attached to the partition member as much as necessary. Deterioration can be suppressed. Moreover, since the properties of the vapor deposition material do not deteriorate, a sufficient vapor deposition rate can be obtained.

It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on Example 1 of this invention. It is AA sectional drawing of the vapor deposition apparatus. It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on Example 2 of this invention. It is a schematic sectional drawing which shows the vapor deposition apparatus which concerns on Example 3 of this invention.

Hereinafter, the vapor deposition apparatus which concerns on Example 1 of this invention is demonstrated based on drawing.
As shown in FIG. 1, the vapor deposition apparatus includes a vapor deposition chamber 2 having a vapor deposition chamber 21 therein and a holder 22 for a glass substrate K as a vapor deposition member in the vapor deposition chamber 21. An evaporation container 3 having a columnar evaporation container main body (also referred to as a crucible, the inside of which becomes an evaporation chamber 31) 30 disposed below the evaporation container 2 and filled with an evaporation material, and the evaporation container 2 And a communication part 4 for guiding the vapor deposition material (hereinafter referred to as vapor deposition material vapor) evaporated in the evaporation container main body 30, that is, in the evaporation chamber 31, to the vapor deposition chamber 21. Yes.

  In this vapor deposition container 2, an inlet 23 for introducing vapor of vapor deposition material into the vapor deposition chamber 21 is formed in the bottom wall portion, and is attached to the lower side of the inlet 23 to connect to the communication portion 4. The flange portion 2F, the introduction pipe portion 24 provided in the vapor deposition chamber 21 so that the inner peripheral surface of the introduction port 23 and the introduction port 23 are flush with each other, and rectifies the vapor of the vapor deposition material and leads it to the vapor deposition chamber 21; An introduction pipe heating section 25 which comprises a heating wire disposed in 24 and a power source (not shown) for energizing the heating wire and which heats the vapor of the vapor deposition material passing through the introduction pipe section 24 to prevent temperature drop; A diffusion box 26 attached to the upper end of the introduction pipe portion 24 and having a plurality of diffusion holes formed on the upper surface for diffusing the vapor of the vapor deposition material, and a vacuum device 27 capable of bringing the vapor deposition chamber 21 to a predetermined degree of vacuum. ing. In addition, the deposition container 2 has a substrate exchange opening 28 for loading and unloading the glass substrate K formed on the side wall, and a substrate exchange load lock chamber 29 is connected to the substrate exchange opening 28. Yes. In addition, a gate valve 29V is provided in the substrate replacement opening 28. The vacuum device 27 includes an exhaust pump 27P for exhausting the vapor deposition chamber 21, a vacuum pipe 27D for connecting the exhaust pump 27P and the vapor deposition chamber 21, and a vacuum for the vapor deposition chamber 21 provided in the vacuum pipe 27D. And a vacuum on-off valve 27V for adjusting the degree.

  The communication part 4 includes a communication main body 40 having a lower communication port 43L and an upper communication port 43U formed at the lower end and the upper end, respectively, in order to pass the vapor of the vapor deposition material from the evaporation chamber 31 and guide it to the vapor deposition chamber 21. A valve seat 46 that divides the communication main body 40 into two chambers and has an opening (hereinafter referred to as an inflow adjusting opening 48) to communicate these chambers, and a heating wire disposed in the communication main body 40 And a heating unit 45 for heating the vapor deposition material vapor passing through the communication main body 40 to prevent temperature drop, and the lower side and the upper side of the lower communication port 43L. The flange portion 4F is provided on the upper side of the communication port 43U and connected to the evaporation vessel 3 and the evaporation vessel 2 respectively.

  The valve seat portion 46 includes a vertical plate and two horizontal plates and has a cross-sectional shape in cross section. One of the two chambers partitioned by the valve seat portion 46 has a lower communication port 43L. The other is a chamber 41I, and the other is a lead-out chamber for allowing vapor deposition material vapor to flow from the adjacent introduction chamber 41I through the inflow adjusting opening 48 and leading the vapor deposition material vapor to the vapor deposition chamber 21 through the upper communication port 43U. 41O. The inflow adjusting opening 48 formed in the vertical plate and communicating with the chambers 41I and 41O has a tapered shape, and is formed so that the opening area on the outlet chamber 41O side is larger.

  On the other hand, the communication portion 4 is provided with a steam flow rate adjusting valve (which is an example of an adjusting means) 5 for adjusting the amount of vapor deposition material vapor. The steam flow rate adjusting valve 5 is tapered within the outlet chamber 41O and fits in the inflow adjusting opening 48 (that is, a truncated cone shape, and the smaller plane faces the inflow adjusting opening 48). The valve body portion 58 and the cylinder portion 51 having a piston rod that is attached to the tip and that can be freely withdrawn / retracted are provided. In addition, the cylinder part 51 completely closes the inflow adjustment opening 48 with the valve body part 58 when extended, and the piston part moves out and retracts enough to separate the valve body part 58 from the inflow adjustment opening part 48 when contracted. It is a possible structure.

  On the other hand, the evaporation container 3 has an outlet 33 that is formed on the upper surface of the evaporation container main body 30 and guides the vapor of the vapor deposition material to the communication part 4, and is attached to the upper side of the outlet 33 to connect the communication part 4. A flange portion 3F for connecting to the heating vessel, a heating wire disposed over the side wall portion (circumferential surface) and the bottom wall portion of the evaporation vessel main body 30, and a power source (not shown) for energizing the heating wire And an evaporation heating unit 35 that heats and evaporates the vapor deposition material filled in the evaporation chamber 31. Further, a rectangular parallelepiped partition member 6 is horizontally inserted in the side wall portion of the evaporation container main body 30, and this partition member 6 is formed between the distal end of the partition member 6 on the insertion side and the inner peripheral wall surface of the evaporation chamber 31. It arrange | positions so that the space which vapor deposition material vapor | steam passes may be ensured between. Further, since the partition member 6 has a width direction (a direction orthogonal to the insertion direction) smaller than the inner diameter of the evaporation chamber 31, the space between the inner peripheral wall surface of the evaporation chamber 31 and the partition member 6 is used. As shown in FIG. 2, a certain communication space 31 </ b> M is formed in three directions including the insertion direction of the partition member 6 and both width directions in plan view. That is, as shown in FIG. 1, the evaporation chamber 31 is positioned below the partition member 6 and filled with a vapor deposition material, and the gap between the inner peripheral wall surface of the evaporation chamber 31 and the partition member 6. A communication space 31M, and an upper space portion 31U in which vapor deposition material vapor rising (moving) from the lower space portion 31L through the communication space 31M stays above the partition member 6 is provided. become.

  The partition member 6 evaporates the vapor deposition material filled in the evaporation chamber 31, cools the vapor of the vapor deposited in the upper space portion 31U, adheres it to the upper surface, and heats the deposited vapor deposition material again. Evaporate. Therefore, the partition member 6 stays in the upper space portion 31U and the lower heating portion (an example of the lower heating means) 65L that heats the vapor deposition material filled in the lower space portion 31L to form vapor deposition material vapor. A cooling unit (an example of a cooling unit) 62 that cools vapor deposition material vapor to be cooled by a cooling medium, and an upper heating unit (an example of an upper heating unit) that re-heats and evaporates the vapor deposition material adhering to the upper surface of the partition member 6. 65U). The lower heating unit 65L includes a heating wire disposed in the lower part of the partition member 6 and a power source (not shown) for energizing the heating wire, and the upper heating unit 65U is disposed above the partition member 6. The heating wire is provided, and a power source (not shown) for energizing the heating wire. On the other hand, the cooling unit 62 is disposed inside the partition member 6 and circulates a cooling medium (for example, cooling water as shown in FIG. 1), and the cooling medium circulation pipe 63 is connected to the cooling medium circulation pipe 63. The cooling medium flow rate adjustment valve 64 is configured to adjust the flow rate of the cooling medium.

  By the way, in order to efficiently cool the vapor deposition material staying in the upper space portion 31U, the upper space portion 31U is sufficiently narrow with respect to the lower space portion 31L. That is, the height at which the partition member 6 is inserted is closer to the flange portion 3F (upper side) of the evaporation container body 30 as shown in FIG.

  Further, the vapor deposition apparatus 1 includes the above-described heating units (the introduction pipe heating unit 25, the communication heating unit 45, the evaporation heating unit 35, the lower heating unit 65L, and the upper heating unit 65U), the temperature of the cooling unit 62, and the vapor deposition. A control device 7 for controlling the flow rate of the material vapor is provided. Specifically, the control device 7 includes a heating control unit 75 that can control the heating temperature of each heating unit by adjusting the heat generation amount of the heating wire by adjusting the current flowing through the heating wire, and the cooling medium flow rate. A cooling control unit 72 that can control the cooling temperature of the cooling unit 62 by controlling the flow rate of the cooling medium passing through the cooling medium circulation pipe 63 by adjusting the opening of the adjusting valve 64, and the valve in the steam flow rate adjusting valve 5 A vapor deposition rate control unit 78 is configured to control the flow rate (vapor deposition rate) of vapor deposition material vapor derived from the communication unit 4 by controlling the exit and withdrawal of the body part 58. Note that the heating control unit 75 can switch between at least two set temperatures, that is, a temperature at which the vapor deposition material is evaporated without deteriorating, and a temperature at which the vapor deposition material is evaporated at an appropriate speed.

The operation in the above configuration will be described.
First, in the vapor deposition chamber 21, the glass substrate K is carried in from the substrate replacement opening 28, and the glass substrate K is held by the holder 22. On the other hand, the evaporation chamber 31 is filled with a vapor deposition material. In the steam flow rate adjustment valve 5, the valve body 58 of the steam flow rate adjustment valve 5 is separated from the inflow adjustment opening 48 by the vapor deposition rate control unit 78 of the control device 7 (hereinafter, the steam flow rate adjustment valve 5 is It is said to be open).

Next, the vacuum opening / closing valve 27V is opened and the exhaust pump 27P is operated to exhaust the vapor deposition chamber 21 to a predetermined degree of vacuum (for example, 10 ⁻⁴ Pa or less). Since the steam flow rate adjusting valve 5 is in an open state, the communication main body 40 and the evaporation chamber 31 are also set to a predetermined degree of vacuum, similar to the vapor deposition chamber 21.

And the valve body part 58 is inserted in the inflow adjustment opening part 48 by the vapor deposition rate control part 78, and the valve seat part 46 is sealed (hereinafter, the steam flow rate adjustment valve 5 is in a closed state).
Thereafter, the evaporation control unit 75 of the control device 7 heats the vapor deposition material to a temperature at which the vapor deposition material is evaporated to such an extent that the vapor deposition material is not deteriorated by the evaporation heating unit 35, the upper heating unit 65U, and the lower heating unit 65L. Further, in order to prevent the vapor deposition material vapor from being cooled and adhering to the communication main body portion 40 and the introduction pipe portion 24 when the vapor deposition material vapor is guided to the vapor deposition chamber 21, the communication heating portion 45 and the introduction pipe heating portion 25 are also provided in advance. It is turned on by the heating controller 75.

  Thereby, the vapor deposition material in the evaporation chamber 31 evaporates and rises as vapor deposition material vapor from the lower space portion 31L to the introduction chamber 41I of the communication portion 4 through the communication space 31M and the upper space portion 31U. Since 5 is in a closed state, the vapor of the vapor deposition material is blocked by the valve body portion 58 and mainly stays in the upper space portion 31U.

  Next, the heating control unit 75 turns off the upper heating unit 65U, and the cooling control unit 72 cools the vapor deposition material accumulated in the upper space 31U by the cooling unit 62. Thereby, the vapor deposition material vapor condenses and adheres to the upper surface of the partition member 6, and the vapor deposition material vapor in the evaporation chamber 31 decreases. Therefore, the heating temperature by the lower heating unit 65L is further increased to promote vaporization of the vapor deposition material. .

  When the vapor deposition material adhering to the upper surface of the partition member 6 reaches a predetermined amount (calculated from the target film thickness and vapor deposition area for vapor deposition on the glass substrate K), the cooling unit 62 is turned off, and the vapor deposition material is appropriately set. The vapor deposition material is heated by the upper heating unit 65U until the temperature is evaporated at a speed. On the other hand, the vapor flow rate adjustment valve 5 is opened by the vapor deposition rate control unit 78, the vapor deposition material heated by the upper heating unit 65U is led to the vapor deposition chamber 21 as vapor deposition material vapor, and vapor deposition on the glass substrate K is started. .

  At this time, the deposition rate control unit 78 adjusts the amount of the valve body 58 with respect to the inflow adjustment opening 48 so that the deposition rate becomes constant. In general, the vapor deposition rate is large if the amount of the vapor deposition material attached to the partition member 6 is sufficient, but decreases as the amount of the vapor deposition material decreases. Therefore, as the vapor deposition material adhering to the partition member 6 decreases due to evaporation by the upper heating portion 65U, the cylinder portion 51 is contracted to separate the valve body portion 58 from the inflow adjustment opening portion 48, that is, the inflow adjustment opening portion 48. By increasing the passage cross-sectional area of the vapor deposition material vapor at, the amount of vapor deposition material vapor passing per unit time is made constant. In addition, even if the valve body 58 is sufficiently separated from the inflow adjustment opening 48, when the passing amount of vapor deposition material vapor per unit time is insufficient, the heating temperature by the lower heating unit 65L is increased as necessary. Keep the deposition rate constant.

  And if the film thickness of the vapor deposition material vapor-deposited on the glass substrate K becomes a target film thickness, while turning off each heating part, the vapor | steam flow volume adjustment valve 5 is made into a closed state, and the vapor deposition material vapor | steam to the vapor deposition chamber 21 is made. Block inflow. Then, the glass substrate K is replaced through the substrate replacement opening 28, and a new glass substrate K is held. Thereafter, the gate valve 29V is closed, and the vapor deposition chamber 21 is brought to a predetermined degree of vacuum by the vacuum device 27.

Thereafter, as described above, vapor deposition is performed by heating the vapor deposition material in the evaporation chamber 31, cooling the vapor of the vapor deposition material, and heating the vapor deposition material adhering to the partition member 6.
As described above, the vapor deposition material 31 is not heated for vapor deposition, but is deposited on the partition member 6 as much as necessary, and the vapor deposition material is heated for vapor deposition. Can be suppressed. Moreover, since the properties of the vapor deposition material do not deteriorate, a sufficient vapor deposition rate can be obtained.

Next, the vapor deposition apparatus which concerns on Example 2 of this invention is demonstrated based on drawing.
In the vapor deposition apparatus 1 according to the first embodiment, the partition member 6 is inserted into the columnar evaporation container main body 30, whereas in the vapor deposition apparatus according to the second embodiment, the partition member is a cylinder. It is formed in an annular shape projecting inward from the inner peripheral wall surface of the shaped evaporation container body.

  Hereinafter, although the vapor deposition apparatus which concerns on Example 2 of this invention is demonstrated, while paying attention and explaining the structure of the division member which is a location different from Example 1, about the same structure as Example 1, the same number is shown. A description thereof will be omitted.

  As shown in FIG. 3, an annular partition member 106 protrudes from the inner peripheral wall surface of the evaporation container body 130, and the evaporation container body 130 on which the partition member 106 is disposed has a constriction. It becomes a cylindrical shape. Further, the lower surface side of the partition member 106 is inclined so as to become higher toward the center of the evaporation container main body 130 in order to guide the vapor of the vapor deposition material upward without stagnation, and the upper surface side is centered on the evaporation container main body 130. It is inclined so as to become lower. The partition member 106 is provided with a lower heating unit 165L on the lower surface side and a cooling unit 162 and an upper heating unit 165U on the upper surface side.

  Furthermore, since the partition member 106 has an annular shape as described above, the inner peripheral side of the partition member 106 becomes a space (communication space 131M) through which the vapor deposition material vapor passes. Unlike the first embodiment, the communication space 131M is formed as a short cylindrical shape concentric with the cylindrical evaporation container main body 130. That is, as shown in FIG. 3, the evaporation chamber 131 includes a lower space portion 131 </ b> L that is located below the partition member 106 and is filled with a vapor deposition material, a communication space 131 </ b> M on the inner peripheral side of the partition member 106, There is provided an upper space portion 131U that is located above the member 106 and in which vapor deposition material vapor rising (moving) from the lower space portion 131L via the communication space 131M stays.

  By the way, as in the first embodiment, the upper space 131U is sufficiently narrow with respect to the lower space 131L in order to efficiently cool the vapor of the vapor deposited in the upper space 131U. . That is, the height at which the partition member 106 is formed is closer to the flange portion 3F (upper side) of the evaporation container main body 130 as shown in FIG.

The operation in the above configuration is the same as in the first embodiment.
As described above, in the same manner as in the first embodiment, not all the vapor deposition material in the evaporation chamber 131 is heated for vapor deposition, but the vapor deposition material is attached to the partition member 106 by a necessary amount and then heated for vapor deposition. The effect is similar to that of the first embodiment.

  Further, in the second embodiment, the communication space 131M is formed concentrically with the evaporation container main body 130 and is inclined so that the lower surface side of the partition member 106 becomes higher toward the center of the evaporation container main body 130. Therefore, by guiding the vapor of the vapor deposition material to the upper space 131U without stagnation, the vapor deposition material can be easily attached to the upper surface of the partition member 106, and the efficiency of vapor deposition can be increased.

In the second embodiment, the upper surface side of the partition member 106 is inclined. However, the partition member 106 may be horizontal in order to prevent the deposited material from flowing down.
Moreover, although the evaporation container main bodies 30 and 130 in Example 1 and Example 2 mentioned above demonstrated as a column shape, it is not limited to this shape, Other shapes, such as a polygonal column shape, may be sufficient. .

  Furthermore, in the above-described first and second embodiments, each heating unit is described as a heating wire and a power source, and the cooling unit 62 is described as including cooling medium circulation pipes 63 and 163 and a cooling medium flow rate adjustment valve 64. Other heating means and cooling means may be used.

Next, the vapor deposition apparatus which concerns on Example 3 of this invention is demonstrated based on drawing.
In the vapor deposition apparatus 1 according to the first embodiment and the second embodiment, one evaporation container 3 is disposed below the vapor deposition container 2, whereas in the vapor deposition apparatus according to the third embodiment, Four evaporation containers are disposed below the deposition container.

  Hereinafter, although the vapor deposition apparatus which concerns on Example 3 of this invention is demonstrated, while focusing on the number of the containers for evaporation which are locations different from Example 1 and Example 2, and a structure of a communication part, it demonstrates and Example 1 is demonstrated. The same configurations as those in the second embodiment are denoted by the same reference numerals and the description thereof is omitted.

  As shown in FIG. 4, the four evaporation containers 3A, 3B, 3C, 3D are filled with different vapor deposition materials A, B, C, D, respectively. The communication main body 240 also deposits the vapor deposition materials A, B, C, and D from the vaporization chambers 31A, 31B, 31C, and 31D of the four vaporization containers 3A, 3B, 3C, and 3D. Since it leads to the chamber 21, there is one upper communication port 243U, but four lower communication ports 243L are formed. That is, the communication main body 240 is one at the upper part, but is branched into four at the lower part and connected to the respective evaporation containers 3A, 3B, 3C, 3D. In addition, at the four branches of the communication main body 240, vapor deposition flow rate adjusting valves 5A, 5B, 5C, and 5D are provided, respectively. Each of the evaporation containers 3, the steam flow rate adjusting valve 5, and the communication portion 204 other than the above configuration have the same configuration as that of the first embodiment, and therefore these configurations are schematically shown in FIG. 4.

Moreover, although not shown in figure, the control apparatus which controls the temperature of each said heating part and cooling part, and the flow volume of vapor deposition material vapor | steam similarly to Example 1 and Example 2 is comprised.
The operation in the above configuration will be described.

  The operation is basically the same as that described in the first embodiment. However, unlike the first embodiment, the vapor deposition apparatus 1 according to the third embodiment is provided with a plurality of vapor deposition materials and evaporation containers, and therefore will be described by paying attention to the order of the vapor deposition materials for vapor deposition.

  First, all the vapor deposition materials A, B, C, and D are evaporated from the evaporation containers 3A, 3B, 3C, and 3D to be vapor deposition materials, and then the vapor deposition materials A, B, C, and D are cooled and condensed. The operation until each is attached to the upper surface of each partition member 6A, 6B, 6C, 6D is performed as described in the first embodiment.

First, the vapor deposition material A is evaporated from the partition member 6 </ b> A by the operation described in the first embodiment and vapor deposited on the glass substrate K.
Next, the vapor deposition material B is vaporized from the partition member 6B and vapor deposited on the glass substrate K in the same manner as described in the first embodiment. On the other hand, while the vapor deposition material B is being evaporated, the vapor deposition material A in the evaporation container 3A is evaporated to vapor deposition material, and then cooled and condensed, as described above, on the upper surface of each partition member 6A. Leave it attached.

Further, the vapor deposition material C is vapor-deposited on the glass substrate K in the same manner, and the vapor deposition material B is adhered to the upper surface of the partition member 6B during this time.
Similarly, vapor deposition from the respective evaporation containers is repeated in order, and a multilayer film of the respective vapor deposition materials A, B, C, and D is formed on the glass substrate K.

Thereafter, in the same manner as in Example 1, the glass substrate K is replaced, and a multilayer film is formed on the new glass substrate K as described above.
Thus, the vapor deposition apparatus according to the third embodiment has the same effect as that of the first embodiment, and can obtain a multilayer film made of a plurality of vapor deposition materials.

  In the third embodiment, each of the evaporation containers 3A, 3B, 3C, 3D has been described as being the same as the evaporation container 3 in the first embodiment. However, the same as the evaporation container 3 in the second embodiment. A thing may be used.

  In the third embodiment, the number of evaporation containers has been described as four. However, the number is not limited to four as long as it is plural.

DESCRIPTION OF SYMBOLS 1 Vapor deposition apparatus 2 Vapor deposition container 3 Vaporization container 4 Communication part 5 Steam flow regulating valve 6 Partition member 7 Control apparatus 29 Load lock chamber 30 Evaporation container main body 31U Upper space part 31M Communication space 31L Lower space part 46 Valve seat part 48 Inflow adjustment opening 51 Cylinder 58 Valve body 62 Cooling unit 65U Upper heating unit 65L Lower heating unit 72 Cooling control unit 75 Heating control unit 78 Deposition rate control unit 106 Partition member 131 Evaporating chamber 163 Cooling medium circulation pipe 165U Upper heating unit 165L Lower heating part 204 Communication part 240 Communication main part

Claims (3)

An evaporation container for evaporating the vapor deposition material filled in the container main body, and an evaporation container disposed above the evaporation container and guiding the evaporated vapor deposition material through the communicating portion to evaporate the vapor deposition material. A vapor deposition apparatus comprising an adjusting unit that adjusts a passing amount of the vapor deposition material that is disposed and evaporated in the communication portion,
Above the inside of the container body of the evaporation container, a partition member that can be partitioned into an upper space portion and a lower space portion leaving a part of the communication space,
A lower heating means capable of heating the vapor deposition material in the lower space portion is disposed on the lower surface side of the partition member, and moved from the lower space portion to the upper space portion via the communication space on the upper surface side of the partition member. A vapor deposition apparatus comprising: a cooling means capable of cooling the vapor deposition material; and an upper heating means capable of heating and evaporating the vapor deposition material attached to the upper surface of the partition member. There are a plurality of evaporation containers for evaporating the vapor deposition material filled in the container body. The vapor deposition materials are disposed above the evaporation containers and led to evaporate each evaporated vapor deposition material on the vapor deposition target member through the communicating portion. A vapor deposition apparatus comprising: a vapor deposition container; and an adjusting unit that adjusts a passage amount of each vapor deposition material that is disposed and evaporated in the communication portion,
A partition member that can be partitioned into an upper space portion and a lower space portion while leaving a part of the communication space above the inside of the container body of each of the evaporation containers,
Lower heating means capable of heating each vapor deposition material in the lower space portion is disposed on the lower surface side of each partition member, and the upper space is disposed on the upper surface side of each partition member from the lower space portion via the communication space. A vapor deposition apparatus comprising: a cooling means that can cool each vapor deposition material moved into the section; and an upper heating means that heats and vaporizes each vapor deposition material attached to the upper surface of the partition member. The vapor deposition apparatus according to claim 1, wherein the partition member is formed in an annular shape protruding inward from an inner peripheral wall surface of the container main body of the evaporation container.

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