JPH05311404A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPH05311404A JPH05311404A JP12205192A JP12205192A JPH05311404A JP H05311404 A JPH05311404 A JP H05311404A JP 12205192 A JP12205192 A JP 12205192A JP 12205192 A JP12205192 A JP 12205192A JP H05311404 A JPH05311404 A JP H05311404A
- Authority
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- Japan
- Prior art keywords
- chamber
- raw material
- substrate
- gas
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】（目次） ・産業上の利用分野 ・従来の技術（図４） ・発明が解決しようとする課題 ・課題を解決するための手段（図１） ・作用 ・実施例（図２，図３） ・発明の効果(Table of Contents) -Industrial application field-Conventional technology (Fig. 4) -Problems to be solved by the invention-Means for solving the problem (Fig. 1) -Action-Examples (Fig. 2, Fig. 2) 3) ・ Effect of invention
【０００２】[0002]
【産業上の利用分野】本発明は、膜形成装置に関し、更
に詳しく言えば、酸化物超伝導体膜を形成する膜形成装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus for forming an oxide superconductor film.
【０００３】[0003]
【従来の技術】近年、酸化物超伝導体は従来にない高い
転移温度を有し、線材，配線及びジョセフソン素子への
応用などエレクトロニクス分野での応用が期待されてい
る。このような応用を実現するため、酸化物超伝導体膜
の形成技術の確立が不可欠である。2. Description of the Related Art Recently, oxide superconductors have an unprecedentedly high transition temperature, and are expected to be applied to electronics fields such as wire rods, wiring lines and Josephson devices. In order to realize such applications, it is indispensable to establish a technology for forming an oxide superconductor film.
【０００４】酸化物超伝導体膜の形成は、蒸着法，ＭＢ
Ｅ法，ＣＶＤ法及びスパッタ法等がある。膜形成時に
は、酸化剤として酸素（分子，イオン又はラジカル），
オゾン，亜酸化窒素（Ｎ2 Ｏ）及び二酸化窒素（Ｎ
Ｏ2 ）等の酸化性ガスが用いられ、特に、爆発の危険も
少なく、強力な酸化力を有する二酸化窒素（ＮＯ2 ）ガ
スが注目されている。このような酸化性ガスを用いて酸
化物超伝導体膜の形成を行うためのＭＢＥ装置の構成を
図４に示す。The oxide superconductor film is formed by vapor deposition, MB
There are E method, CVD method, sputtering method and the like. At the time of film formation, oxygen (molecule, ion or radical) as an oxidant,
Ozone, nitrous oxide (N 2 O) and nitrogen dioxide (N
Oxidizing gas such as O 2 ) is used, and in particular, nitrogen dioxide (NO 2 ) gas, which has little danger of explosion and has a strong oxidizing power, is drawing attention. FIG. 4 shows the configuration of an MBE apparatus for forming an oxide superconductor film using such an oxidizing gas.
【０００５】１はチャンバ、２は被堆積基板９をチャン
バ１内から出し入れする際、チャンバ１内部の圧力を保
持すべく、圧力調整を行うためにチャンバ１に連接され
ている予備室で、被堆積基板９はこの予備室２を介して
チャンバ１から搬出入される。３はチャンバ１と予備室
２との間を開閉するゲートバルブで、ゲートバルブ３を
閉じることより各室１，２内の圧力を独立に保持するこ
とができるようになっている。４はチャンバ１内に設け
られた被堆積基板９を保持する基板保持具で、被堆積基
板９を加熱するためのヒータが内蔵されている。５ａ，
５ｂは基板保持具４と対向する位置に設けられた、超伝
導体原料を入れた原料容器、６ａ，６ｂはそれぞれの原
料容器５ａ，５ｂ中の原料を加熱するヒータ、７ａ，７
ｂは加熱されてそれぞれの原料容器５ａ，５ｂから蒸発
又は昇華する原料の飛散を遮蔽するシャッタ、８は酸化
剤としての二酸化窒素ガスを被堆積基板９の表面に供給
するガス導入ノズルである。なお、チャンバ１と予備室
２は、チャンバ１内及び予備室２内を排気するため排気
装置と接続された不図示の排気口を有している。Reference numeral 1 is a chamber, and 2 is a preparatory chamber connected to the chamber 1 for adjusting the pressure so as to maintain the pressure inside the chamber 1 when the substrate 9 to be deposited is taken in and out of the chamber 1. The deposition substrate 9 is carried in and out of the chamber 1 via the preliminary chamber 2. Reference numeral 3 denotes a gate valve that opens and closes between the chamber 1 and the auxiliary chamber 2. By closing the gate valve 3, the pressure in each chamber 1, 2 can be independently maintained. Reference numeral 4 denotes a substrate holder provided in the chamber 1 for holding the deposition target substrate 9 and having a built-in heater for heating the deposition target substrate 9. 5a,
5b is a raw material container provided at a position facing the substrate holder 4 and containing a superconductor raw material, 6a and 6b are heaters for heating the raw materials in the respective raw material containers 5a and 5b, and 7a and 7a.
Reference numeral b is a shutter that shields the scattering of the raw materials that are heated and evaporated or sublimated from the raw material containers 5a and 5b, and 8 is a gas introduction nozzle that supplies nitrogen dioxide gas as an oxidant to the surface of the deposition target substrate 9. The chamber 1 and the auxiliary chamber 2 have an exhaust port (not shown) connected to an exhaust device for exhausting the inside of the chamber 1 and the auxiliary chamber 2.
【０００６】次に、この装置を用いて酸化物超伝導体膜
を形成する方法について説明する。まず、予備室２を大
気圧にして被堆積基板９を搬入した後、予備室２内を減
圧し、所定の圧力に達した後、ゲートバルブ３を開けて
被堆積基板９をチャンバ１内に搬入し、基板保持具４に
載置する。Next, a method for forming an oxide superconductor film using this apparatus will be described. First, the preparatory chamber 2 is brought to atmospheric pressure and the deposition target substrate 9 is carried in. After the preparatory chamber 2 is depressurized to reach a predetermined pressure, the gate valve 3 is opened to place the deposition target substrate 9 in the chamber 1. It is carried in and placed on the substrate holder 4.
【０００７】次に、チャンバ１内を排気しながら、内部
圧力が所定の圧力に達したら原料を加熱して原料を昇華
させる。昇華しはじめたらシャッタ７ａを開けると、原
料が被堆積基板９に堆積していく。このとき、同時にガ
ス導入ノズル８から二酸化窒素ガスを放出し、堆積膜を
酸化することにより酸化物超伝導体膜を形成する。Next, while exhausting the inside of the chamber 1, when the internal pressure reaches a predetermined pressure, the raw material is heated to sublimate the raw material. When the shutter 7a is opened after the sublimation starts, the raw material is deposited on the deposition target substrate 9. At this time, at the same time, nitrogen dioxide gas is discharged from the gas introduction nozzle 8 to oxidize the deposited film to form an oxide superconductor film.
【０００８】このようにして所定の時間経過した後、被
堆積基板９上に所望の膜厚の酸化物超伝導体膜が形成さ
れる。その後、逆の移動により被堆積基板９をチャンバ
１／予備室２から取り出す。After a predetermined time elapses in this way, an oxide superconductor film having a desired film thickness is formed on the deposition substrate 9. After that, the deposition target substrate 9 is taken out from the chamber 1 / preliminary chamber 2 by the reverse movement.
【０００９】[0009]
【発明が解決しようとする課題】しかし、上記のＭＢＥ
装置を用いた酸化物超伝導体膜の形成方法において、二
酸化窒素（ＮＯ2 ）ガスは装置の内壁に吸着し易く、膜
形成後、次の膜形成を行う際真空度が中々回復しない。
例えば、膜形成時には５×１０-7Ｔｏｒｒであった真空
度が、膜形成後には５×１０-4Ｔｏｒｒまで低下してい
る。However, the above MBE
In the method of forming an oxide superconductor film using an apparatus, nitrogen dioxide (NO 2 ) gas is easily adsorbed on the inner wall of the apparatus, and the degree of vacuum is not recovered when forming the next film after forming the film.
For example, the degree of vacuum, which was 5 × 10 −7 Torr when the film was formed, is lowered to 5 × 10 −4 Torr after the film is formed.
【００１０】このため、膜形成後、装置をベーキング
（焼きだし）してチャンバ１の内壁に吸着している二酸
化窒素（ＮＯ2 ）ガスを放出する必要があるが、放出さ
れたＮＯ2 ガスにより、チャンバ１内にある被堆積基板
９のヒータや原料加熱ヒータ等が酸化されて劣化すると
いう問題がある。For this reason, it is necessary to bake (burn out) the apparatus after the film formation to release the nitrogen dioxide (NO 2 ) gas adsorbed on the inner wall of the chamber 1, but the released NO 2 gas causes However, there is a problem that the heater of the deposition target substrate 9 in the chamber 1 and the raw material heating heater are oxidized and deteriorated.
【００１１】本発明は、かかる従来技術の問題点に鑑み
て創作されたものであり、被堆積基板を加熱するヒータ
や原料を加熱するヒータ等が膜形成に用いられる酸化性
ガスにより劣化するのを防止することが可能な膜形成装
置の提供を目的とする。The present invention was created in view of the problems of the prior art, and the heater for heating the substrate to be deposited, the heater for heating the raw material, etc. are deteriorated by the oxidizing gas used for film formation. An object of the present invention is to provide a film forming apparatus capable of preventing the above.
【００１２】[0012]
【課題を解決するための手段】上記課題は、第１に、図
１に示すように、被堆積基板１１を保持し、該被堆積基
板１１を加熱するヒータを有する基板保持具１２と、ヒ
ータ21ａ，21ｂにより原料22ａ，22ｂを加熱して原料ガ
スを供給する原料供給部１３と、前記原料供給部１３か
らの原料ガスと酸化性ガスを導入して前記被堆積基板１
１上に堆積膜を形成する成長室１４とを有する膜形成装
置であって、前記基板保持具１２を具備する第１の収納
室１５と前記原料供給部１３を具備する第２の収納室１
６とを有し、かつ前記成長室１４と前記第１の収納室間
１５及び前記成長室１４と前記第２の収納室１６間には
それぞれ第１のバルブ１７及び第２のバルブ１８を有
し、該第１のバルブ１７及び第２のバルブ１８の開閉に
より前記成長室１４と前記第１の収納室１５間及び前記
成長室１４と前記第２の収納室１６間のガスの通流が制
御されることを特徴とする膜形成装置によって達成さ
れ、第２に、前記酸化性ガスは、二酸化窒素（ＮＯ2 ）
ガスであることを特徴とする膜形成装置によって達成さ
れる。To solve the above problems, firstly, as shown in FIG. 1, a substrate holder 12 having a heater for holding a substrate 11 to be deposited and heating the substrate 11 to be deposited, and a heater. The raw material supply unit 13 for heating the raw materials 22a, 22b by 21a, 21b to supply the raw material gas, and the raw material gas and the oxidizing gas from the raw material supply unit 13 for introducing the deposition target substrate 1
1 is a film forming apparatus having a growth chamber 14 for forming a deposited film on a substrate 1, and a first storage chamber 15 having the substrate holder 12 and a second storage chamber 1 having the raw material supply unit 13.
And a first valve 17 and a second valve 18 between the growth chamber 14 and the first storage chamber 15 and between the growth chamber 14 and the second storage chamber 16, respectively. However, by opening and closing the first valve 17 and the second valve 18, gas flow between the growth chamber 14 and the first storage chamber 15 and between the growth chamber 14 and the second storage chamber 16 can be performed. Controlled by a film forming apparatus, and secondly, the oxidizing gas is nitrogen dioxide (NO 2 ).
It is achieved by a film forming apparatus characterized by being a gas.
【００１３】[0013]
【作 用】本発明の膜形成装置においては、図１に示す
ように、基板保持具１２を収納する第１の収納室１５
と、原料供給部１３を収納する第２の収納室１６とを有
し、かつ成長室１４と第１の収納室１５間及び成長室１
４と第２の収納室１６間にはそれぞれ第１のバルブ１７
及び第２のバルブ１８を有し、第１のバルブ１７及び第
２のバルブ１８の開閉により成長室１４と第１の収納室
１５間及び成長室１４と第２の収納室１６間のガスの通
流が制御される。[Operation] In the film forming apparatus of the present invention, as shown in FIG. 1, the first storage chamber 15 for storing the substrate holder 12 is provided.
And a second storage chamber 16 for storing the raw material supply unit 13, and between the growth chamber 14 and the first storage chamber 15 and the growth chamber 1.
The first valve 17 is provided between the fourth storage chamber 16 and the second storage chamber 16 respectively.
And a second valve 18, and by opening and closing the first valve 17 and the second valve 18, gas between the growth chamber 14 and the first storage chamber 15 and between the growth chamber 14 and the second storage chamber 16 Flow is controlled.
【００１４】従って、堆積膜を形成するために用いられ
た酸化性ガス、例えば二酸化窒素（ＮＯ2 ）ガスの粒子
が付着している成長室１４内壁をベーキングする際、第
１及び第２の収納室１５，１６内に基板保持具１２や原
料供給部１３を収納し、かつ第１及び第２のバルブ１
７，１８を閉鎖することにより、成長室１４内壁から放
出される酸化性ガスから基板保持具１２と原料供給部１
３とを隔絶することができる。これにより、基板保持具
１２や原料供給部１３が被堆積基板１１や原料22ａ，22
ｂを加熱するヒータ１２，21ａ，21ｂを有する場合、放
出された酸化性ガスによるヒータ１２，21ａ，21ｂの劣
化を防止することができる。Therefore, when baking the inner wall of the growth chamber 14 to which the particles of the oxidizing gas used for forming the deposited film, for example, nitrogen dioxide (NO 2 ) gas adhere, the first and second storage chambers are used. The substrate holder 12 and the raw material supply unit 13 are housed in the chambers 15 and 16, and the first and second valves 1 are provided.
By closing the valves 7 and 18, the substrate holder 12 and the raw material supply unit 1 are protected from the oxidizing gas emitted from the inner wall of the growth chamber 14.
It can be isolated from 3. As a result, the substrate holder 12 and the raw material supply unit 13 cause the deposition target substrate 11 and the raw materials 22a, 22
When the heaters 12, 21a, 21b for heating b are provided, it is possible to prevent the heaters 12, 21a, 21b from being deteriorated by the released oxidizing gas.
【００１５】[0015]
【実施例】次に、図面を参照しながら本発明の実施例に
ついて説明する。図２は、本発明の実施例の酸化物超伝
導体膜の形成を行うＭＢＥ（分子線エピタキシ）装置の
構成図である。Embodiments of the present invention will now be described with reference to the drawings. FIG. 2 is a block diagram of an MBE (Molecular Beam Epitaxy) apparatus for forming an oxide superconductor film according to an embodiment of the present invention.
【００１６】図２において、２５は被堆積基板２４を保
持し、被堆積基板２４を加熱するヒータを有する基板保
持具、２６は不図示のヒータが内蔵され、このヒータに
より原料を加熱して原料ガスを供給するクヌーセンセル
33ａ，33ｂとクヌーセンセル33ａ，33ｂから蒸発又は昇
華する原料が飛散するのを遮蔽するシャッタ32ａ，32ｂ
とを有する原料供給部、２７は原料供給部２６からの原
料ガスと、ガス導入ノズル３４からの酸化性ガス、例え
ば二酸化窒素（ＮＯ2 ）ガスとを導入して被堆積基板２
４上に酸化物超伝導体膜（堆積膜）を形成する成長室で
ある。In FIG. 2, reference numeral 25 is a substrate holder having a heater for holding the substrate 24 to be deposited and heating the substrate 24 to be deposited, and 26 is a built-in heater (not shown). Knudsen cell that supplies gas
Shutters 32a, 32b for blocking the scattering of raw materials evaporated or sublimated from 33a, 33b and Knudsen cells 33a, 33b
A source material supply unit 27 having a source material supply unit 26 and a source gas from the source material supply unit 26 and an oxidizing gas, for example, nitrogen dioxide (NO 2 ) gas, from a gas introduction nozzle 34 are introduced to deposit the substrate 2
4 is a growth chamber for forming an oxide superconductor film (deposited film) on 4.
【００１７】また、２８は成長室２７内をベーキングす
る際に成長室２７で放出される酸化性ガスに曝されない
ようにするために基板保持具２５を収納する第１の収納
室、２９は同じく成長室２７内をベーキングする際に原
料供給部２６を収納する第２の収納室で、成長室２７と
第１の収納室２８間及び成長室２７と第２の収納室２９
間にはそれぞれ第１のゲートバルブ３０及び第２のバル
ブ３１を有し、第１のゲートバルブ３０及び第２のゲー
トバルブ３１の開閉により成長室２７と第１の収納室２
８間及び成長室２７と第２の収納室２９間のガスの通流
が制御される。Reference numeral 28 is a first storage chamber for storing the substrate holder 25 so as not to be exposed to the oxidizing gas released in the growth chamber 27 when baking the inside of the growth chamber 27, and 29 is also the same. A second storage chamber that stores the raw material supply unit 26 when the inside of the growth chamber 27 is baked. Between the growth chamber 27 and the first storage chamber 28 and between the growth chamber 27 and the second storage chamber 29.
A first gate valve 30 and a second valve 31 are provided between the growth chamber 27 and the first storage chamber 2 by opening and closing the first gate valve 30 and the second gate valve 31, respectively.
8 and between the growth chamber 27 and the second storage chamber 29 is controlled.
【００１８】なお、成長室２７，第１及び第２の収納室
２８及び２９にはそれぞれ不図示の排気口が設けられ、
独立の排気装置に接続されている。そして、各室２７〜
２９内を排気できるようになっている。また、成長室２
７の外壁周辺部に不図示の加熱装置が設けられ、この加
熱装置により成長室２７内壁を加熱することができるよ
うになっている。An exhaust port (not shown) is provided in each of the growth chamber 27, the first and second storage chambers 28 and 29,
It is connected to an independent exhaust system. And each room 27-
The inside of 29 can be exhausted. Also, growth room 2
A heating device (not shown) is provided around the outer wall of 7, and the inner wall of the growth chamber 27 can be heated by this heating device.
【００１９】３５は成長室２７内に設けられたコールド
トラップ（シュラウド）で、液体窒素が収納され、膜形
成中にシュラウド３５の外壁を低温にしておくことによ
り、膜形成中に飛散してくる原料ガスや酸化性ガスが付
着する領域を限定してヒータへの付着を低減することが
でき、酸化性ガスの付着によるヒータの劣化防止に一層
有効である。Reference numeral 35 is a cold trap (shroud) provided in the growth chamber 27, in which liquid nitrogen is stored and which is scattered during film formation by keeping the outer wall of the shroud 35 at a low temperature during film formation. The adhesion of the raw material gas and the oxidizing gas to the heater can be reduced by limiting the area where the oxidizing gas adheres, and it is more effective in preventing the heater from deteriorating due to the adhesion of the oxidizing gas.
【００２０】次に、この装置を用いて酸化物超伝導体膜
を形成する方法について説明する。図３（ａ），（ｂ）
は、上記のＭＢＥ装置を用いて酸化物超伝導体膜を形成
する方法について説明する断面図である。Next, a method of forming an oxide superconductor film using this apparatus will be described. 3 (a), 3 (b)
[FIG. 3] is a cross-sectional view illustrating a method of forming an oxide superconductor film using the above MBE device.
【００２１】まず、第１のゲートバルブ３０により成長
室２７と第１の収納室２８の間を閉鎖した後、第１の収
納室２８を大気圧にして被堆積基板２４を搬入し、基板
保持具２５に載置する。続いて、第１の収納室２８内を
排気して減圧し、内部圧力が成長室２７とほぼ等しい圧
力、例えば５×１０-6Ｔｏｒｒに達した後、第１のゲー
トバルブ３０を開けて基板保持具２５を下に下げ、被堆
積基板２４を成長室２７内に搬入し、所定の位置に固定
する（図３（ａ））。First, after the space between the growth chamber 27 and the first storage chamber 28 is closed by the first gate valve 30, the first storage chamber 28 is brought to the atmospheric pressure and the deposition target substrate 24 is loaded and the substrate is held. Place on the tool 25. Subsequently, the first storage chamber 28 is evacuated to reduce the pressure, and after the internal pressure reaches a pressure almost equal to that of the growth chamber 27, for example, 5 × 10 −6 Torr, the first gate valve 30 is opened to open the substrate. The holder 25 is lowered and the deposition target substrate 24 is loaded into the growth chamber 27 and fixed at a predetermined position (FIG. 3A).
【００２２】次いで、成長室２７内が所定の圧力に達し
たら、第２のゲートバルブ３１を開けて、成長室２７と
第２の収納室２９とを連通する。次に、原料を加熱して
原料を昇華させる。昇華しはじめたらシャッタ32ａ，32
ｂを開けると、原料が成長室２７の方に飛散していき、
被堆積基板２４に堆積していく。このとき、同時にガス
導入ノズル３４から二酸化窒素（ＮＯ2 ）ガスを放出
し、被堆積基板２４上に形成されつつある堆積膜を酸化
する。このようにして所定の時間経過した後、被堆積基
板２４上に所望の膜厚の酸化物超伝導体膜が形成され
る。なお、成長室２７内にシュラウド３５を設けて、不
要なガスを優先的に付着させることにより、膜形成中に
ヒータへのガスの付着を低減することができ、ヒータの
劣化防止に一層有効である。Next, when the inside of the growth chamber 27 reaches a predetermined pressure, the second gate valve 31 is opened to connect the growth chamber 27 and the second storage chamber 29. Next, the raw material is heated to sublimate the raw material. When sublimation begins, shutters 32a, 32
When b is opened, the raw materials are scattered toward the growth chamber 27,
It is deposited on the deposition target substrate 24. At this time, at the same time, nitrogen dioxide (NO 2 ) gas is released from the gas introduction nozzle 34 to oxidize the deposited film being formed on the deposition target substrate 24. After a predetermined time elapses in this way, an oxide superconductor film having a desired film thickness is formed on the deposition target substrate 24. By providing the shroud 35 in the growth chamber 27 to preferentially deposit unnecessary gas, it is possible to reduce the deposition of gas on the heater during film formation, which is more effective in preventing heater deterioration. is there.
【００２３】次いで、成長室２７内への被堆積基板２４
の搬入の場合と逆の移動により被堆積基板２４を成長室
２７から第１の収納室２８内に移動した後、第１の収納
室２８の第１のゲートバルブ３０を閉めて第１の収納室
２８と成長室２７とを隔絶するとともに、原料供給部２
６の第２のゲートバルブ３１を閉めて原料供給部２６と
成長室２７とを隔絶する。そして、被堆積基板２４を第
１の収納室２８から取り出す（図３（ｂ））。Next, the substrate 24 to be deposited is placed in the growth chamber 27.
After the deposition target substrate 24 is moved from the growth chamber 27 into the first storage chamber 28 by a movement opposite to the case of the first storage chamber 28, the first storage chamber 28 is closed by the first gate valve 30. The chamber 28 and the growth chamber 27 are isolated from each other, and the raw material supply unit 2
The second gate valve 31 of 6 is closed to isolate the raw material supply part 26 and the growth chamber 27. Then, the deposition target substrate 24 is taken out from the first storage chamber 28 (FIG. 3B).
【００２４】次に、成長室２７内壁に残留する二酸化窒
素（ＮＯ2 ）ガスを除去するため、成長室２７内を排気
しながら、成長室２７の外壁周辺部に設けられている不
図示の加熱装置により成長室２７内壁を加熱する。これ
により、成長室２７内壁に残留する二酸化窒素（Ｎ
Ｏ2 ）ガスは放出されはじめる。そして、放出された二
酸化窒素（ＮＯ2 ）ガスは排気装置と接続されている排
気口から排気され、加熱前には１０-4Ｔｏｒｒ台であっ
た成長室２７内の真空度は加熱処理による清浄化の後、
１０-7Ｔｏｒｒ台に回復した。また、この間、第１の収
納室２８及び第２の収納室２９と成長室２７との間が閉
鎖されているので、成長室２７内壁から放出される二酸
化窒素（ＮＯ2 ）ガスから基板保持具２５及び原料供給
部２６が隔絶されており、第１の収納室２８及び第２の
収納室２９は５×１０-7Ｔｏｒｒ台に保持されていた。
従って、二酸化窒素（ＮＯ2 ）ガスによるヒータの劣化
を防止することができる。Next, in order to remove the nitrogen dioxide (NO 2 ) gas remaining on the inner wall of the growth chamber 27, while heating the inside of the growth chamber 27, heating (not shown) provided around the outer wall of the growth chamber 27 is performed. The inner wall of the growth chamber 27 is heated by the device. As a result, the nitrogen dioxide (N
O 2 ) gas begins to be released. Then, the released nitrogen dioxide (NO 2 ) gas is exhausted from the exhaust port connected to the exhaust device, and the degree of vacuum in the growth chamber 27, which was on the order of 10 −4 Torr before heating, was cleaned by the heat treatment. After becoming
Recovered to 10 -7 Torr level. Further, during this period, the first storage chamber 28, the second storage chamber 29, and the growth chamber 27 are closed, so that the substrate holder is protected from the nitrogen dioxide (NO 2 ) gas released from the inner wall of the growth chamber 27. 25 and the raw material supply unit 26 are isolated from each other, and the first storage chamber 28 and the second storage chamber 29 are held on the 5 × 10 −7 Torr stage.
Therefore, deterioration of the heater due to nitrogen dioxide (NO 2 ) gas can be prevented.
【００２５】以上のように、本発明の実施例の膜形成装
置によれば、基板保持具２５を収納する第１の収納室２
８と、原料供給部２６を収納する第２の収納室２９とを
有し、かつ各室２８，２９と成長室２７との間を閉鎖す
ることができる第１及び第２のゲートバルブ３０，３１
を有しているので、成長室２７内壁をベーキングする
際、成長室２７内壁から放出される二酸化窒素（Ｎ
Ｏ2 ）ガスから基板保持具２５及び原料供給部２６を隔
絶することができる。これにより、二酸化窒素（Ｎ
Ｏ 2 ）ガスによるヒータの劣化を防止することができ
る。As described above, the film forming apparatus of the embodiment of the present invention is used.
According to the arrangement, the first storage chamber 2 for storing the substrate holder 25
8 and a second storage chamber 29 that stores the raw material supply unit 26.
Have and close between each chamber 28, 29 and the growth chamber 27
First and second gate valves 30, 31 that can be
, The inner wall of the growth chamber 27 is baked.
At this time, the nitrogen dioxide (N
O2) The substrate holder 25 and the raw material supply unit 26 are separated from the gas.
Can be cut off. As a result, nitrogen dioxide (N
O 2) It is possible to prevent heater deterioration due to gas.
It
【００２６】なお、実施例では、酸化性ガスとして二酸
化窒素（ＮＯ2 ）ガスを用いているが、酸素（分子，イ
オン又はラジカル）ガス，オゾンガス，亜酸化窒素（Ｎ
2 Ｏ）ガス等を用いることもできる。Although nitrogen dioxide (NO 2 ) gas is used as the oxidizing gas in the embodiments, oxygen (molecule, ion or radical) gas, ozone gas, nitrous oxide (N 2
2 O) gas or the like can also be used.
【００２７】[0027]
【発明の効果】以上のように、本発明の膜形成装置によ
れば、基板保持具を収納する第１の収納室と、原料供給
部を収納する第２の収納室とを有し、かつ成長室と第１
の収納室間及び成長室と第２の収納室間にはそれぞれ第
１のバルブ及び第２のバルブを有し、第１のバルブ及び
第２のバルブの開閉により成長室と第１の収納室間及び
成長室と第２の収納室間のガスの通流が制御される。As described above, according to the film forming apparatus of the present invention, it has the first storage chamber for storing the substrate holder and the second storage chamber for storing the raw material supply section, and Growth room and first
Between the growth chambers and between the growth chambers and the second storage chambers have a first valve and a second valve, respectively, and the growth chambers and the first storage chambers are opened and closed by opening and closing the first valve and the second valve. And the flow of gas between the growth chamber and the second storage chamber is controlled.
【００２８】従って、例えば酸化物超伝導体膜形成のた
めに用いられた酸化性ガスの粒子が付着している成長室
内壁をベーキングにより清浄にする際、第１及び第２の
収納室内に基板保持具や原料供給部を収納し、かつ第１
及び第２のバルブを閉鎖することにより、基板保持具や
原料供給部に設けられたヒータの、放出された酸化性ガ
スによる劣化を防止することができる。Therefore, for example, when cleaning the inner wall of the growth chamber to which the particles of the oxidizing gas used for forming the oxide superconductor film adhere by cleaning, the substrate is placed in the first and second storage chambers. Holds the holder and raw material supply section, and
Also, by closing the second valve, it is possible to prevent deterioration of the heater provided in the substrate holder or the raw material supply section due to the released oxidizing gas.
【図１】本発明の膜形成装置の原理構成図である。FIG. 1 is a principle configuration diagram of a film forming apparatus of the present invention.
【図２】本発明の実施例のＭＢＥ装置の構成図である。FIG. 2 is a configuration diagram of an MBE device according to an embodiment of the present invention.
【図３】本発明の実施例のＭＢＥ装置を用いて酸化物超
伝導体膜を形成する方法について説明する図である。FIG. 3 is a diagram illustrating a method of forming an oxide superconductor film by using the MBE device according to the embodiment of the present invention.
【図４】従来例のＭＢＥ装置の構成図である。FIG. 4 is a block diagram of a conventional MBE device.
１１，２４ 被堆積基板、 １２，２５ 基板保持具（ヒータ）、 １３，２６ 原料供給部、 １４，２７ 成長室、 １５，２８ 第１の収納室、 １６，２９ 第２の収納室、 １７ 第１のバルブ、 １８ 第２のバルブ、 19ａ，19ｂ，32ａ，32ｂ シャッタ、 20ａ，20ｂ 原料容器、 21ａ，21ｂ ヒータ、 22ａ，22ｂ 原料、 ２３，３４ ガス導入ノズル、 ３０ 第１のゲートバルブ、 ３１ 第２のゲートバルブ、 33ａ，33ｂ クヌーセンセル、 ３５ シュラウド。 11,24 Deposition substrate, 12,25 Substrate holder (heater), 13,26 Raw material supply part, 14,27 Growth chamber, 15,28 First storage chamber, 16,29 Second storage chamber, 17th 1 valve, 18 2nd valve, 19a, 19b, 32a, 32b shutter, 20a, 20b raw material container, 21a, 21b heater, 22a, 22b raw material, 23, 34 gas introduction nozzle, 30 first gate valve, 31 Second gate valve, 33a, 33b Knudsen cell, 35 shroud.
Claims (2)
基板（１１）を加熱するヒータを有する基板保持具（１
２）と、ヒータ（２１）により原料を加熱して原料ガス
を供給する原料供給部（１３）と、前記原料供給部（１
３）からの原料ガスと酸化性ガスとを導入して前記被堆
積基板９上に堆積膜を形成する成長室（１４）とを有す
る膜形成装置であって、 前記基板保持具（１２）を具備する第１の収納室（１
５）と前記原料供給部（１３）を具備する第２の収納室
（１６）とを有し、かつ前記成長室（１４）と前記第１
の収納室（１５）間及び前記成長室（１４）と前記第２
の収納室間（１６）にはそれぞれ第１のバルブ（１７）
及び第２のバルブ（１８）を有し、該第１のバルブ（１
７）及び第２のバルブ（１８）の開閉により前記成長室
（１４）と前記第１の収納室（１５）間及び前記成長室
（１４）と前記第２の収納室（１６）間のガスの通流が
制御されることを特徴とする膜形成装置。1. A substrate holder (1) having a heater for holding a deposition substrate (11) and heating the deposition substrate (11).
2), a raw material supply unit (13) for heating a raw material by a heater (21) to supply a raw material gas, and the raw material supply unit (1)
A film forming apparatus having a growth chamber (14) for introducing a source gas from 3) and an oxidizing gas to form a deposited film on the substrate 9 to be deposited, the substrate holder (12) being First storage room (1
5) and a second storage chamber (16) having the raw material supply part (13), and the growth chamber (14) and the first storage chamber (16).
Between the storage chambers (15) and between the growth chamber (14) and the second
A first valve (17) is provided between the storage chambers (16) of
And a second valve (18), the first valve (1
7) and the opening and closing of the second valve (18) between the growth chamber (14) and the first storage chamber (15) and between the growth chamber (14) and the second storage chamber (16) A film forming apparatus characterized in that the flow of water is controlled.
Ｏ2 ）ガスであることを特徴とする膜形成装置。2. The oxidizing gas is nitrogen dioxide (N 2
O 2 ) gas is a film forming apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12205192A JPH05311404A (en) | 1992-05-14 | 1992-05-14 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12205192A JPH05311404A (en) | 1992-05-14 | 1992-05-14 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05311404A true JPH05311404A (en) | 1993-11-22 |
Family
ID=14826400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12205192A Withdrawn JPH05311404A (en) | 1992-05-14 | 1992-05-14 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05311404A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011195916A (en) * | 2010-03-23 | 2011-10-06 | Hitachi Zosen Corp | Vapor deposition apparatus |
-
1992
- 1992-05-14 JP JP12205192A patent/JPH05311404A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011195916A (en) * | 2010-03-23 | 2011-10-06 | Hitachi Zosen Corp | Vapor deposition apparatus |
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