JP6628869B2 - Thin film manufacturing apparatus and thin film manufacturing method - Google Patents

Description

  The present invention relates to a technique for forming a thin film, and in particular, to provide a thin film manufacturing apparatus and a thin film manufacturing method in which a usable period of a film thickness sensor for detecting a growth rate of a thin film is long.

Reference numeral 100 in FIG. 3 is a conventional thin film manufacturing apparatus, which has a vacuum chamber 113. An evaporation source 112 is disposed inside the vacuum chamber 113.
The evaporation source 112 has an evaporation container 133, and a film formation target substrate 115 carried into the vacuum chamber 113 passes or is located above the evaporation container 133. I have.

The evaporation container 133 is hollow, and an organic material 137 made of a powdery organic compound is disposed inside the hollow of the evaporation container 133.
A heating device 134 is provided in the evaporation container 133, and the heating device 134 is connected to a film forming power supply 145.

The inside of the vacuum chamber 113 is evacuated by the vacuum evacuation device 139 to form a vacuum atmosphere, and the heating device 134 is energized by the film forming power supply 145 to generate heat. The heated heating device 134 heats the evaporation container 133. The organic material 137 that has been heated and disposed inside the evaporation container 133 is heated by the heated evaporation container 133.
When the temperature of the organic material 137 is raised to a temperature equal to or higher than the evaporation temperature, the organic material 137 evaporates (including sublimation), and a large amount of vapor of the organic material 137 is released into the evaporation container 133.

  A discharge hole 138 is provided in the evaporation container 133 at a position facing the film formation target substrate 115, and the generated vapor is discharged from the discharge hole 138 into the vacuum chamber 113 and reaches the surface of the film formation target substrate 115. Then, a thin film of the organic material 137 grows in the reached portion.

In the thin film manufacturing apparatus 100, a growth rate control circuit 114 for controlling the growth rate of the thin film of the organic material 137 is disposed outside the vacuum chamber 113.
The procedure for controlling the growth rate by the growth rate control circuit 114 will be described. A film thickness sensor 131 is provided inside the vacuum chamber 113, and the film thickness sensor 131 is provided in the growth rate control circuit 114. Connected to the growth rate measuring device 141.

  The film thickness sensor 131 is disposed at a side position of the film formation target substrate 115, and the vapor of the organic material 137 released from the evaporation source 112 reaches the film formation target substrate 115 and the film thickness sensor 131, A thin film is grown on the film formation target substrate 115 and the film thickness sensor 131. The film thickness detected by the film thickness sensor 131 is output to the growth rate measuring device 141 as a signal indicating the film thickness, and the growth rate is measured. The growth rate of the film thickness is obtained by the measuring device 141, and a signal indicating the growth speed is output to the speed deviation detector 142 as a measurement signal.

  The desired growth rate of the thin film that grows on the surface of the film formation target substrate 115 is obtained in advance, and is converted into the growth rate of the surface of the film thickness sensor 131 and stored in the storage device 143 as a reference value. , A reference signal indicating a reference value is output and input to the speed deviation detector 142.

  The speed deviation detector 142 obtains a magnitude relationship and a difference value between a value indicated by the input reference signal and a value indicated by the input measurement signal, and calculates a deviation that is a signed difference value indicating positive or negative. The indicated deviation signal is output from the velocity deviation detector 142 to the film forming power supply 145.

  When the deviation signal input to the film formation power supply 145 indicates that the growth rate indicated by the measurement signal is larger than the growth rate indicated by the reference signal, the film formation power supply 145 turns on the heating device 134. Of the organic material 137 in the evaporation source 112 is reduced, and the value of the growth rate between the film formation target substrate 115 and the film thickness sensor 131 is reduced.

  On the other hand, when the growth rate indicated by the measurement signal is smaller than the growth rate indicated by the reference signal, the film formation power supply 145 increases the current output to the heating device 134 and increases the organic current inside the evaporation source 112. By increasing the amount of vapor generated from the material 137, the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is increased.

As described above, by adjusting the current value supplied to the heating device 134, the fluctuation of the amount of steam generated from the organic material 137 is reduced, the amount of generated steam is maintained at a constant value, and the growth rate is set to the reference value. Will be maintained.
The amount of current to be increased and the amount of current to be decreased are proportional to the value of the deviation. When the absolute value of the deviation is large, the deviation quickly approaches zero.

  However, with a constant monitoring method that constantly measures the growth rate, compares it with the reference value, and tries to bring the growth rate closer to the reference value, oscillations in the value of the growth rate and changes in the growth rate with respect to the output current amount may occur. There is a problem that it is difficult to control the actual growth rate increase / decrease and the change amount due to the influence of the delay or the like.

  Reference numeral 105 in FIG. 4 is a curve showing the time change of the growth rate when the growth rate is controlled by the constant monitoring method. The curve 105 shows a small change while the growth rate increases and approaches a straight line 106 indicating the reference value. The difference between the actual growth rate and the reference value is large even when approaching the reference value due to the fine increase and decrease.

WO2015 / 182090

  SUMMARY OF THE INVENTION The present invention has been made to solve the above-described disadvantages of the related art, and has as its object to provide a thin film manufacturing apparatus capable of detecting a growth rate of a thin film for a long period of time.

The present invention in order to solve the above problems, a vacuum chamber, a deposition source deposition material is disposed, the supply power to the deposition source, the deposition material that is disposed on deposition source A main controller for heating to release vapor from the film-forming material, and releasing fine particles of the vapor from the discharge part of the film-forming source into the inside of the vacuum chamber; and a position where the fine particles reach and grow a thin film. And a film thickness sensor that outputs a film thickness signal having a content indicating the film thickness of the thin film formed on the surface, wherein the main control device outputs the film thickness signal output by the film thickness sensor. A thin film manufacturing apparatus that changes a magnitude of electric power supplied to the film formation source to change a release rate of the film formation source, and grows a thin film on a surface of a film formation target at a desired growth rate. A shutter is disposed in the vacuum chamber, and the shutter is controlled by a main controller. And the shutter is positioned between the film thickness sensor and the emission unit to shield the fine particles from reaching the film thickness sensor. Moving from the position between them to another location, and the arrival state in which the fine particles reach the film thickness sensor is alternately and repeatedly switched, so that one arrival period and one shielding period adjacent to the arrival period Is a fixed time, and the power supplied to the film forming source is changed once in the one cycle .
The present invention is the thin film manufacturing apparatus, wherein the thickness of the thin film formed on the film thickness sensor is measured during a reaching period in which the shutter maintains the reaching state.
The present invention is a thin film manufacturing apparatus that obtains a measured growth rate on the film thickness sensor from the measured film thickness, and changes the amount of power supplied to the film formation source.
In the present invention, the inside of the vacuum chamber is set to a vacuum atmosphere, power is supplied to a film forming source disposed inside the vacuum chamber, and the film forming material is heated to release vapor from the film forming material. Discharging the vapor microparticles from the discharge unit of the film source, allowing the microparticles to reach the film formation target and the film thickness sensor located in the vacuum atmosphere, and based on the growth rate of the thin film growing on the film thickness sensor. A thin film manufacturing method for changing the magnitude of the electric power to bring the measured growth rate close to the reference rate, wherein a shutter is provided inside the vacuum chamber, and while the fine particles reach the object to be film-formed. The shutter is opened and closed, and the shutter is positioned between the film thickness sensor and the emission unit so as to prevent the fine particles from reaching the film thickness sensor, and between the film thickness sensor and the emission unit. Move the shutter to the front Switching repeated and reaching a state where the fine particles in the film thickness sensor reaches alternately, one cycle is the total time of one of the shielding period adjacent to the arrival time and one of the arrival period is set to a predetermined time, the formed The power supplied to the film source is a thin film manufacturing method in which the power is changed once in the one cycle .
The present invention is a method of manufacturing a thin film, wherein the measured growth rate is obtained for each arrival period in which the shutter maintains the arrival state, and the magnitude of power supplied to the film formation source is changed.

  In the present invention, if the time of one cycle is set and the supply power is changed once during one cycle, the fluctuation of the growth rate due to the constant control is eliminated, and the control becomes easy.

  In the thin film manufacturing apparatus of the prior art, since the amount of vapor generated from the organic material is constantly monitored, it was necessary to frequently replace the film thickness sensor. Since the time (period) during which the film is attached to the sensor is shorter than before, it is possible to form a film on a large number of film-forming objects with a lower replacement frequency than before.

  Further, according to the present invention, the time required for the thin film to adhere to the film thickness sensor can be shortened, so that the life of the film thickness sensor can be extended.

FIG. 2 is a block diagram illustrating a thin film manufacturing apparatus according to the present invention. Graph for explaining the relationship between the oscillation frequency and the film thickness of a crystal unit Block diagram for explaining a conventional thin film manufacturing apparatus Graph showing change over time in growth rate Graph comparing frequency change during arrival period and frequency change when arrival period and cut-off period are repeated in a short time

Reference numeral 10 in FIG. 1 indicates a thin film manufacturing apparatus according to the present invention.
The thin film manufacturing apparatus 10 has a vacuum chamber 13, and a film forming source 12 is arranged inside the vacuum chamber 13.

  The film forming source 12 has a hollow evaporation container 33, and a film forming material 37 is disposed in the hollow portion. Here, the film forming material 37 is a powdery organic compound, but may be an inorganic material such as a metal material or a metal oxide, or a liquid material.

A vacuum exhaust device 45 is connected to the vacuum chamber 13, and when the vacuum exhaust device 45 operates to evacuate the inside of the vacuum chamber 13, a vacuum atmosphere is formed inside the vacuum chamber 13.
The inner hollow portion of the evaporation container 33 is evacuated by the evacuation device 45 to form a vacuum atmosphere, similarly to the vacuum chamber 13. Another evacuation device may be connected to the evaporation container 33, and the inside of the evaporation container 33 may be evacuated by the evacuation device.

A main controller 18 is arranged outside the vacuum chamber 13.
The main controller 18 is provided with the growth rate controller 14, and the growth rate controller 14 is provided with a film formation power supply 46 and a power supply controller 42 for controlling the operation of the film formation power supply 46.

When the power supply controller 42 operates the film formation power supply 46, power is supplied from the film formation power supply 46 to the film formation source 12.
A heating device 34 is provided inside the film forming source 12, and the heating device 34 generates heat by the supplied power to heat the film forming material 37.

  When the temperature of the film forming material 37 is raised to a temperature equal to or higher than the evaporation temperature in a state where the inside of the vacuum chamber 13 is in a vacuum atmosphere, steam is generated from the film forming material 37. The generated vapor is fine particles of the film forming material 37.

On the ceiling of the evaporation container 33, a vapor discharge hole is formed as a discharge portion 38, and the fine particles of the film forming material 37 pass through the vapor discharge hole. Then, the fine particles of the film forming material 37 are released.
Therefore, when power is supplied from the main controller 18 to the film formation source 12, the fine particles of the film formation material 37 are emitted from the film formation source 12. The discharge section 38 may be a plurality of vapor discharge ports.

In the vacuum chamber 13, a film formation target is located at a film formation position where the fine particles of the film formation material 37 reach, or the film formation target passes through the film formation position. Have been. Here, a substrate holder 39 is provided at a film-forming position where the fine particles of the film-forming material 37 reach, and the film-forming target indicated by reference numeral 15 is held by the substrate holder 39 and is stationary.
When the fine particles of the film forming material 37 reach the surface of the film forming object 15, a thin film (here, an organic thin film) containing the components of the film forming material 37 grows on the surface of the film forming object 15.

A film thickness sensor 31 and a shutter 35 are arranged inside the vacuum chamber 13.
The main controller 18 is provided with a motor controller 51 and an opening / closing controller 43 connected to the motor controller 51.

The shutter 35 is connected to a motor 36, and the rotation of the motor 36 is controlled by a motor controller 51.
The shutter 35 is moved in the vacuum chamber 13 by the rotation of the motor 36 so that the position thereof can be changed. The shutter 35 is controlled by the opening / closing controller 43 to control the motor controller 51, so that the shutter 35 is in a blocking state located at a blocking place between the film thickness sensor 31 and the discharge unit 38, and is moved from the blocking place. Then, unlike the cut-off location, it can take any state of the arrival state when it is located in a place that is not between the film thickness sensor 31 and the emission section 38. Therefore, the shutter 35 is opened and closed by setting the shutter state to the shielding state and the reaching state.

When the shutter 35 is in the reaching state, the film thickness sensor 31 is located at a position where the fine particles of the film-forming material 37 released from the film-forming source 12 can reach. Fine particles of the film-forming material 37 emitted from the same film-forming source 12 reach the sensor 31, and a thin film made of the same kind of fine particles is formed on the surface of the film-thickness sensor 31 and the surface of the film-forming target 15. grow up.
Since the film-forming object 15 and the film thickness sensor 31 have different distances from the film-forming source 12, the film-forming object 15 and the film thickness sensor 31 have a film thickness at a fixed location ratio according to the distance. A thin film grows.

The main controller 18 is provided with a growth rate measuring device 41, and the film thickness sensor 31 is connected to the growth rate measuring device 41.
The film thickness sensor 31 outputs a film thickness signal indicating the film thickness of the thin film attached to the surface to the main controller 18. The film thickness signal output from the film thickness sensor 31 is input to the growth speed measuring device 41 of the main controller 18, and the growth speed measuring device 41 keeps the shutter 35 in the reached state (for example, within 1 second). ), The film thickness of the thin film on the film thickness sensor 31 is measured at different times.
The main controller 18 operates the shutter 35 so that a fixed arrival period and a fixed shielding period are alternately repeated, and the total of one reaching period and one shielding period adjacent to the reaching period is obtained. Assuming that the time is one cycle, the amount of change in the film thickness on the film thickness sensor 31 measured for each arrival period, the time between different measurement times of adjacent arrival periods, and the time of one cycle, The growth rate of the thin film growing on the film thickness sensor 31 is calculated. Here, the growth rate is “increase in film thickness / time required for increase”.

There is a certain proportional relationship between the growth rate of the thin film growing on the film thickness sensor 31 and the growth rate of the thin film growing on the film-forming target 15 in accordance with the value of the location ratio with respect to the film thickness. In addition, the proportional coefficient of the proportional relation of the growth rate is obtained in advance when measuring the location ratio. The main controller 18 can calculate the growth rate of the thin film on the object 15 from the proportional relationship and the growth rate of the thin film on the film thickness sensor 31. Here, the growth rate measuring device 41 outputs the calculated growth rate of the thin film on the film thickness sensor 31 as a measured growth rate.
The main controller 18 is provided with a storage device 49, and the storage device 49 stores a reference value of the growth rate of the thin film on the film thickness sensor 31 as the reference speed.

The reference speed and the measured growth speed are input to the power supply controller 42.
The power supply controller 42 compares the reference speed with the measured growth speed, calculates a deviation consisting of a value corresponding to the difference and a sign indicating which is larger, and generates a film forming power supply 46 as a control signal indicating the speed deviation. Output to

  Also when the growth rate of the thin film growing on the film formation target 15 is output from the growth rate measuring device 41 as the measured growth rate, the reference value of the growth rate for the film formation target 15 is set as the target growth rate. This is the same as comparing the growth rate of the thin film on the film thickness sensor 31 with the reference speed for the film thickness sensor 31.

In any case, the magnitude of the electric power supplied from the film forming power supply 46 to the heating device 34 is controlled by a control signal output from the power supply controller 42, and when the measured growth rate is higher than the reference rate, In order to decrease the emission speed of the fine particles of the material 37, the power supplied to the heating device 34 is reduced by controlling the film forming power supply 46. The “release rate” of the film forming source 12 is a value of “amount of release of the film forming source 12 / release time”.
When the measured growth rate is lower than the reference rate, the film forming power supply 46 is controlled to increase the power supplied to the heating device 34 in order to increase the emission rate of the fine particles.

  During the shielding state in which the shutter 35 is located at the blocking place, the vapor discharged from the discharge unit 38 reaches the film formation target 15 but does not reach the film thickness sensor 31, and Even if a thin film grows on the thin film 15, no thin film grows on the film thickness sensor 31.

  Therefore, the thin film formed on the film thickness sensor 31 is thinner than the thin film formed on the single film formation object 15, and the single film thickness sensor 31 allows a plurality of film formation objects to be formed. 15 can be formed one by one.

  The graph of FIG. 2 shows the relationship between the oscillation frequency (horizontal axis) of the film thickness sensor 31 composed of a quartz oscillator and the weight of the thin film per unit area of the surface of the film thickness sensor 31 (vertical axis: film thickness × density). Is a graph showing that the oscillation frequency decreases as the thin film on the surface of the thin film grows. “Z” in the drawing is a symbol indicating the acoustic impedance ratio between the thin film adhered on the crystal unit and the crystal unit.

  Regarding the crystal oscillator having any value of “z”, the linearity of the graph is higher than that of the other portion between 5 MHz and a frequency (for example, 4.8 MHz) which is several tenths of MHz lower than 5 MHz. It can be seen that within the range, the thickness of the thin film having a known density can be accurately obtained from the measured oscillation frequency value.

When the vapor discharged from the discharge part 38 reaches the film formation target 15 and the film thickness sensor 31, the growth rate of the thin film formed on the film thickness sensor 31 is measured. To maintain the state, the arrival state and the blocking state of the shutter 35 are repeated. Then, in the arrival state during the repetition, the measured growth rate is obtained and the power supplied to the film formation source 12 is controlled so that the film formation target 15 is in the same vacuum chamber 13 as the film thickness sensor 31. While a thin film having a predetermined thickness is formed on the surface of the film-forming object 15 and located within the film-forming object 15, the film-thickness sensor 31 indicates the time for growing the thin film on the surface of the film-forming object 15 It can be shorter than the growth time.
Accordingly, the shutter 35 alternately repeats the shielded state and the arrival state, and measures the film thickness in the arrival state, so that the film thickness of the thin film formed on the surface of the film thickness sensor 31 can be changed to the arrival state without the shield state Can be kept thinner than when.

  The shielding period for maintaining the shielding state and the reaching period for maintaining the reaching state are stored in the storage device 49, and a period signal indicating the length of each period is output to the opening / closing controller 43 as a set value. In accordance with the set value period signal output from the storage device 49, a trigger is output to the growth rate controller 14 during the arrival period, and the power supply controller 42 changes the power supplied to the film formation source 12.

  As described above, when the measured growth rate is obtained during the arrival period and the magnitude of the supplied power is changed, the supply of the power changed to the immediately preceding arrival period may be continued during the shielding period. Then, during the shielding period, the magnitude of the power output in the immediately preceding arrival period may be changed.

Figure numeral 5 4, a polygonal line showing the time course of the growth rate when the magnitude of power was changed at each measurement time point t ₁ ~t ₅ is maintained at between measurement time t ₁ ~t _5, measurement time Between t _{1 and} t ₅ , the growth rate changes linearly and is constant at a value near the straight line 6 indicating the reference value.

If you change the case of maintaining the power between the measurement time t ₁ ~t ₅ also, the total time is one period of any regard to the one of arrival time with one of the shielding period adjacent to the arrival time. When the arrival period and the shielding period are repeated at a fixed ratio as compared with the case where the entire period is the arrival period, the “time of arrival state / one period” is smaller than “1”, and the film thickness is “ Time of state / one cycle "times. Therefore, the usable time of the film thickness sensor 31 used in the present invention is multiplied by “one cycle / time of arrival state”.

FIG. 5 shows the relationship between the elapsed time (horizontal axis) and the frequency of the film thickness sensor (vertical axis) when the short arrival period and the shielding period are repeated after the long arrival period. and a graph, from the start time a of the arrival period, between the cut-off time B of the arrival period, the slope of the curve L ₁ showing the relationship between the elapsed time and frequency, a cut-off period and the arrival period after time B Repeat is larger than the slope of the curve L ₂ when the, thus, the repeated-off period and the arrival time, the film thickness of the thin film formed on the surface of the film thickness sensor 31 can be seen small.

In the above embodiment, the measured growth rate was obtained within one arrival period, but the value of the film thickness obtained at the first time, which is the time during one arrival period, and the time during the immediately preceding arrival period, From the film thickness difference, which is the difference between the film thickness value obtained at the second time, and the total time of the arrival period between the first time and the second time, the measured growth rate is obtained. You may do so. In short, the present invention is not limited to obtaining the measured growth rate based only on the thickness value during one arrival period.
Further, since the proportional relationship between the growth rate between the film formation target 15 and the film thickness sensor 31 is known, the desired growth rate on the film formation target 15 is converted into the growth rate on the film thickness sensor 31. The main controller 18 sets the growth rate on the film thickness sensor 31 as a reference value, compares the growth rate of the film thickness sensor 31 with the reference value, controls the power supplied to the heating device 34, and The growth rate of the reference numeral 31 may be a reference value.
In the above example, the film thickness of the film thickness sensor 31 is measured during the reaching period, but may be measured during the shielding period. In this case, the film thickness of the film-forming target 15 at the measured time can also be obtained by measurement and calculation at another time.

  Further, in the above embodiment, the resistance heater is used for the heating device 34, and the evaporation container 33 is heated by heat conduction, and further, the film forming material 37 is heated by the heated evaporation container 33 by heat conduction. The temperature of the film forming material 37 was controlled by controlling the amount of heat generated by the heating device 34, but the evaporation container 33 was heated using an infrared lamp as the heating device 34, The induction current may be supplied to the evaporation container 33 to heat the evaporation container 33.

In addition, although an evaporation system in the above example, the present invention uses a sputtering target as the film forming source, the main control equipment, the sputtering power source for supplying electric power is arranged as a film-forming power to the sputtering target With the power supplied from the film formation power source to the film formation source, plasma is formed on the emission part which is the surface of the film formation source, the film formation source is sputtered, and fine particles of a film forming material composed of sputtered particles are emitted from the emission part. A sputtering apparatus for forming a thin film by emitting fine particles to reach the surface of a film formation target and the surface of a film thickness sensor is also included. The required film forming apparatus provided with a shutter which can move between a blocking location, and other locations between the film thickness sensor and the film forming source is included in the thin film production apparatus of the present invention.
Further, in the above embodiment, the evaporation container 33 is arranged inside the vacuum tank 13, but the evaporation container may be arranged outside the vacuum tank 13.

Note that the term “ release speed” in the above description means the amount of steam released per unit time, and does not mean the flight speed of steam.

10 Thin film manufacturing apparatus 13 Vacuum chamber 14 Growth rate controller 15 Film forming object 31 Film thickness sensor 35 Shutter 33 Evaporation container 37 Film forming material 41 Growth Speed measuring device 42 Power supply controller 45 Vacuum evacuation device 46 Film forming power supply 49 Storage device 51 Motor controller

Claims (5)

A vacuum chamber,
A film forming source on which a film forming material is arranged;
The power is supplied to the film forming source, the film forming material disposed in the film forming source is heated to release vapor from the film forming material, and the vapor fine particles are discharged from a discharging unit of the film forming source. A main control device for discharging into the vacuum chamber,
A film thickness sensor that is arranged at a position where the fine particles reach and grows a thin film and outputs a film thickness signal indicating the film thickness of the thin film formed on the surface;
Has,
The main controller changes the release rate of the film formation source by changing the amount of electric power supplied to the film formation source based on the film thickness signal output from the film thickness sensor, thereby achieving a desired growth. A thin film manufacturing apparatus for growing a thin film on a surface of a film formation target at a high speed,
A shutter is arranged in the vacuum chamber,
The shutter is moved by a main controller,
The shutter is located between the film thickness sensor and the emission unit, and in a shielding state that shields the fine particles from reaching the film thickness sensor, and from a position between the film thickness sensor and the emission unit. Moved to another location, and the arrival state of causing the fine particles to reach the film thickness sensor is alternately and repeatedly switched,
One cycle, which is the total time of one arrival period and one shielding period adjacent to the arrival period, is set to a fixed time, and the power supplied to the film formation source is changed once in the one period. that the thin-film manufacturing equipment.   The thin film manufacturing apparatus according to claim 1, wherein the thickness of the thin film formed on the thickness sensor is measured during an arrival period in which the shutter maintains the arrival state.   2. The thin film manufacturing apparatus according to claim 1, wherein a measured growth rate on the film thickness sensor is obtained from the measured film thickness, and a magnitude of power supplied to the film formation source is changed. Making the inside of the vacuum chamber a vacuum atmosphere, supplying power to a film forming source disposed inside the vacuum chamber, heating the film forming material to release vapor from the film forming material, and releasing the film forming source Discharging the fine particles of the vapor from the section, allowing the fine particles to reach the film-forming target and the film thickness sensor located in the vacuum atmosphere, and controlling the electric power based on the growth rate of the thin film growing on the film thickness sensor. A method for producing a thin film that changes the size to bring the measured growth rate close to the reference rate,
A shutter is provided inside the vacuum chamber,
The shutter is opened and closed while the fine particles reach the film-forming target, and the shutter is positioned between the film thickness sensor and the emission unit so that the fine particles do not reach the film thickness sensor. State and the state in which the fine particles reach the film thickness sensor by moving the shutter from between the film thickness sensor and the emission section, and alternately and repeatedly switched.
One cycle, which is the total time of one arrival period and one shielding period adjacent to the arrival period, is set to a fixed time, and the power supplied to the film forming source is changed once in the one period. Thin film manufacturing method.   5. The thin film manufacturing method according to claim 4, wherein the measured growth rate is obtained for each reaching period in which the shutter maintains the reaching state, and the magnitude of the power supplied to the film forming source is changed.

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