JPS5910339A - Continuous film forming device - Google Patents
Continuous film forming deviceInfo
- Publication number
- JPS5910339A JPS5910339A JP11852182A JP11852182A JPS5910339A JP S5910339 A JPS5910339 A JP S5910339A JP 11852182 A JP11852182 A JP 11852182A JP 11852182 A JP11852182 A JP 11852182A JP S5910339 A JPS5910339 A JP S5910339A
- Authority
- JP
- Japan
- Prior art keywords
- film
- film forming
- shutter
- film thickness
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
不発明は、IC−FAXなどの薄膜機能素子の基板に薄
膜を形成する連続成膜装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous film forming apparatus for forming a thin film on a substrate of a thin film functional element such as an IC-FAX.
第1因は従来の連続成膜装置を示す図である。The first factor is a diagram showing a conventional continuous film forming apparatus.
図示する様に従来の連続成膜装置は、処理室1と該処理
室1の一方の側壁に設けられた基板搬入用のゲートパル
プ2と、処理室1の他方の側壁に設けられ皮基板般出用
のゲートパルプ3と、処理室1内の成M1位置に灼同す
る位置に数句けられた成膜源4と、処理室1の内部に配
置さ扛た基板16の搬送手段5と、膜厚も1〜くは成膜
速度の検出器6と、膜厚もL<は成膜速度の測定器7と
、成膜源4に電力を供給する電源8と、成膜源4と検出
器60間に設置されたシャッタ9と、連続成膜装置全体
を制御する制御111I都10から構成さ扛ている。As shown in the figure, the conventional continuous film forming apparatus includes a processing chamber 1, a gate pulp 2 provided on one side wall of the processing chamber 1 for carrying in a substrate, and a gate pulp 2 provided on the other side wall of the processing chamber 1 for carrying in a substrate. A gate pulp 3 to be discharged, a film forming source 4 located at a position corresponding to the forming M1 position in the processing chamber 1, and a transport means 5 for the substrate 16 disposed inside the processing chamber 1. , a detector 6 for measuring the deposition rate when the film thickness is 1 or more, a measuring device 7 for the deposition rate when the film thickness is less than L, a power supply 8 for supplying power to the deposition source 4, and a deposition source 4 It consists of a shutter 9 installed between the detectors 60 and a controller 11110 that controls the entire continuous film forming apparatus.
制御部10は、入出力部11と、中央処理部12と、電
源80出力電圧を141!ll成膜源に供給される電力
を制御する電力設定器16と、電力印加時間を設定する
成膜時間設定器14と、シャッタ9の開閉を指示する開
閉スイッチ15から構成さ扛ている。The control unit 10 has an input/output unit 11, a central processing unit 12, and a power supply 80 output voltage 141! It is composed of a power setting device 16 that controls the power supplied to the film forming source, a film forming time setting device 14 that sets the power application time, and an open/close switch 15 that instructs the shutter 9 to open or close.
この連続成膜装置は、処理室1内を真空に保ち、基板1
6をゲートパルプ2を弁して搬送手段5上に載置し、基
板16を搬送子R5によって処理室1内の成膜位置まで
搬送し、その後制御部1oから電源8に成膜信号aが送
られ、電源8から成膜源4に電力すが供給され、成膜器
4から成膜材料(図示せず)が飛び出して基板16上に
薄膜を形成する。なお、電力すの大きさと供給時間は、
そ扛ぞれ電力設定器13と成膜時間設定器14によって
設定される。薄膜が形成さnた基板16は、搬送手段5
により搬送され、ゲートバルブ6を弁して取り出され、
次の工程に送られる。This continuous film forming apparatus maintains the inside of the processing chamber 1 in a vacuum, and
6 is placed on the transport means 5 by valve of the gate pulp 2, and the substrate 16 is transported to the film forming position in the processing chamber 1 by the transport element R5, and then the film forming signal a is sent from the control unit 1o to the power source 8. Then, power is supplied from the power source 8 to the film forming source 4, and a film forming material (not shown) is ejected from the film forming device 4 to form a thin film on the substrate 16. In addition, the size and supply time of the electric power tank are as follows.
These are set by a power setting device 13 and a film forming time setting device 14, respectively. The substrate 16 on which the thin film is formed is transferred to the transport means 5
is conveyed by the gate valve 6 and taken out.
Sent to the next process.
また、第1図に示す従来の連続成膜装置における膜厚又
は成膜速度の検出器6は、一般に水晶振動子式センサが
用いられている。この水晶振動子式センサは、振動子に
付層する膜の厚さにより振 委動子の共振周波数が変化
する性質を利用したものであり、付層した膜の厚さがあ
る一定値に達すると測定不能となり、振動子を交換する
必要がある。Further, in the conventional continuous film forming apparatus shown in FIG. 1, a crystal oscillator type sensor is generally used as a film thickness or film forming rate detector 6. This crystal oscillator type sensor utilizes the property that the resonant frequency of the oscillator changes depending on the thickness of the film layered on the oscillator, and when the thickness of the layered film reaches a certain value. Then, measurement becomes impossible and the vibrator must be replaced.
従って、この振動子の測定可能回数は極めて少ない。こ
のため、従来の連続成膜装置では、通常シャッタ9を閉
じ膜厚又は成膜速度を測定せずに、電力b−成膜時間な
どの成膜条件を一定にしたまま成膜処理を続け、定期的
に作業者が手動で開閉スイッチ15を操作してジャツメ
9に開閉信号Cを送り、シャッタ9全開き、成膜速度又
は一定時間内の膜厚の変化を監視しでいる。そして、こ
の測定値を設定域値と比較して、必要に応じ電力設定器
16あるいは成膜時間設定器14を操作し、成膜条件を
補正している。Therefore, the number of times this vibrator can be measured is extremely small. For this reason, in conventional continuous film forming apparatuses, the shutter 9 is usually closed and the film forming process is continued without measuring the film thickness or film forming rate, while keeping the film forming conditions such as power b and film forming time constant. A worker periodically operates the opening/closing switch 15 manually to send an opening/closing signal C to the shutter 9 to monitor whether the shutter 9 is fully open, the film forming speed, or the change in film thickness within a certain period of time. Then, this measured value is compared with a set threshold value, and the power setting device 16 or the film forming time setting device 14 is operated as necessary to correct the film forming conditions.
しか12、この様な成′m条件の補正は、測定器7が電
気的に制御部10と接続さ扛−Cいないため人手に↓っ
(イiなわJする0従って、補正時期や補正駿を一定に
することが困難であり、膜厚制御が鞘度艮〈行なえず、
製品歩留りが低下するという欠点がある。However, since the measuring instrument 7 is not electrically connected to the control unit 10, correction for such conditions requires manual labor. It is difficult to keep the film thickness constant, and film thickness control is difficult.
There is a drawback that the product yield is reduced.
特に、成膜1(百〇内例えばスパッタ装置では、成膜処
理を竹なっ−【ゆくにつn1成膜材料t&:*成してい
るターゲツト(図71<1ず)の表面形状が変化してゆ
くため、電力すは−Wであっても成膜速度はしだいに低
くなってしまう。従って、周期的に成膜速度を監祝し、
成膜条件を正確に補正する必要があるが、従来の装置で
tま困難であるという欠点があった。In particular, in film formation 1 (for example, in sputtering equipment), the surface shape of the target (Fig. 71 Therefore, even if the power is -W, the deposition rate gradually decreases.Therefore, the deposition rate is monitored periodically.
Although it is necessary to accurately correct the film-forming conditions, it is difficult to do so with conventional equipment.
また、第1図に示す従来の連続成膜装置とは別のバッチ
式処理方式(すなわち、多数の基板e −括して処理室
に収納して成膜を行う方式)においては、振動子の利用
回数を多くするため、成膜源から振動子までの距離金成
膜源から基板までの距離に比べて大きくしている。この
ため、基板に付着する成膜材料の童に比べて振動子に付
着する成膜材料の童が少なくなり、成膜速度の測定精度
が低下し、その結果製品歩留りが低下するという欠点が
あった。In addition, in a batch processing method (i.e., a method in which a large number of substrates are stored together in a processing chamber for film formation), which is different from the conventional continuous film forming apparatus shown in FIG. In order to increase the number of uses, the distance from the film deposition source to the vibrator is made larger than the distance from the gold deposition source to the substrate. For this reason, there are fewer particles of the film-forming material that adhere to the vibrator than particles of the film-forming material that adhere to the substrate, which reduces the measurement accuracy of the film-forming rate and, as a result, reduces the product yield. Ta.
不発明はかかる従来技術の欠点に鑑みなさnfC。The invention is not made in view of such shortcomings of the prior art.
もので、従来技術の欠点をなくシ、成膜装置の自動連続
運転を可能にし、かつ製品歩留#)を同上させることが
可能な連続製膜装置を提供することを目的としている0
不発明の連続成膜装置は、基板上に成膜材料を付着させ
る成膜源と、基板近傍に設けらnfc検出器の出力を受
は膜厚又は成膜器iを成膜情報として出力する測定器と
、成膜源と検出器の間に設けられ開状態で検出器を作動
可能の状態にするシャッタと、所定のタイミングで所定
時間だけシャッタ全開状態にする信号を出力し、か″)
該タイミングで測定器から出力さ扛る成膜情報に基づい
て成膜器に供給する電力値又は電力供給時間を制御する
制御部とを備えていることを特徴としている。The object of the present invention is to provide a continuous film forming apparatus that eliminates the drawbacks of the prior art, enables automatic continuous operation of the film forming apparatus, and increases the product yield #). The continuous film forming apparatus consists of a film forming source that deposits a film forming material on a substrate, and a measuring device that receives the output of an NFC detector installed near the substrate and outputs film thickness or film forming device i as film forming information. and a shutter installed between the film deposition source and the detector to enable the detector to operate when open, and output a signal to fully open the shutter for a predetermined time at a predetermined timing.
The present invention is characterized by comprising a control section that controls the power value or power supply time to be supplied to the film forming device based on the film forming information outputted from the measuring device at the timing.
以下添付の図面に示す実施例により、更に好細に不発明
について説明する。The invention will be described in more detail below with reference to embodiments shown in the accompanying drawings.
第2図は不発明の一実施例を示す図であシ、第1図に示
す従来の連続成膜装置と同一部分は同一符号を付してそ
の説明を省略する。従来の連続成膜装置と異なる点は、
膜厚又は成膜速度の測定器7が制御部10と電気的VC
接続され、制御部10には成膜時間設定器17と膜厚設
定器18が設けら扛ていることである。次に、この実施
例の動作について説明する。FIG. 2 is a diagram showing an embodiment of the invention, and the same parts as those of the conventional continuous film forming apparatus shown in FIG. 1 are given the same reference numerals, and the explanation thereof will be omitted. The difference from conventional continuous film deposition equipment is that
The film thickness or film formation rate measuring device 7 is connected to the control unit 10 and the electrical VC.
The control unit 10 is provided with a film forming time setting device 17 and a film thickness setting device 18. Next, the operation of this embodiment will be explained.
(イ)測定器7が成Mi11速ILケ慣出する場合ジャ
ツメ9tよ制御部10から出力さノする開閉信号0に、
Lり開閉さ7L、開閉イバ号c tit中央処理部12
にあらかじめ配憶さtl、たプログラムに従って入出刃
部11から出力さノする。そして、シャッタ9が開いて
いるとき、振動子式センサ6と測定器7とで検出さl’
した成膜速〆tユ、成膜情報dとして制御部10に入力
される。この成膜情報dは入出力部11を介して中央処
理部12に入力さ扛、中央処理部12は送ら扛て米た成
膜情報d′t一時間積分し、膜厚を計算する。この計算
値と膜厚設定器18の設定値とが等しくなると、制御部
10から成膜信号aが出力さ扛なくなり、電源8が成膜
器4への電力すの供給を停止し、成膜が終了する。(a) When the measuring device 7 is used to start the 11th speed IL, the opening/closing signal 0 output from the control unit 10 from the opening 9t,
L open/close 7L, open/close number c tit central processing unit 12
The output is performed from the input/output section 11 according to the program stored in advance. When the shutter 9 is open, the vibrator type sensor 6 and the measuring device 7 detect l'
The film-forming speed limit t is input to the control unit 10 as film-forming information d. This film formation information d is input to the central processing section 12 via the input/output section 11, and the central processing section 12 integrates the film formation information d't over time to calculate the film thickness. When this calculated value becomes equal to the setting value of the film thickness setting device 18, the film forming signal a is no longer output from the control unit 10, the power supply 8 stops supplying power to the film forming device 4, and the film forming ends.
上記の動作の他に、中央処理部12が成膜情報dとして
得た成膜速度と成膜速度設定器7の設定値とを比較し、
両者が一致する様に電源8の出力電力b’1制御し、(
膜厚設定器18の設定値)/(成膜速度設定器18の設
定値)として得ら扛る時間だけ成膜する様にしても良い
。In addition to the above operations, the central processing unit 12 compares the deposition rate obtained as the deposition information d with the setting value of the deposition rate setting device 7,
The output power b'1 of the power supply 8 is controlled so that the two match, and (
The film may be formed for a period of time obtained by dividing the setting value of the film thickness setting device 18)/(the setting value of the film forming rate setting device 18).
(ロ)測定器7が膜厚を検出する場合
この場合には、中央処理部12が膜厚設定器18の設定
値と成膜情報dとして得た膜厚とを比較し、両者が一致
するまで成膜する。(b) When the measuring device 7 detects the film thickness In this case, the central processing unit 12 compares the setting value of the film thickness setting device 18 with the film thickness obtained as the film formation information d, and finds that the two match. The film is deposited up to
又、上記の動作の他に、測定器7が膜厚を成膜情報dと
して出力する場合には、中央処理部12で該成膜情報d
から成膜速度を算出し、該算出値と成膜速度設定器17
の設定値とが一致する様に電源8の出力電力すを制御し
、成膜情報dとして得られる膜厚が膜厚設定器1Bの設
定値と等しくなるまで成膜する様にしても艮い。In addition to the above operations, when the measuring device 7 outputs the film thickness as film formation information d, the central processing unit 12 outputs the film formation information d.
The film formation speed is calculated from the above and the film formation speed setter 17
It is also possible to control the output power of the power source 8 so that the values match the set value of the film thickness setting device 1B, and to deposit the film until the film thickness obtained as the film formation information d becomes equal to the set value of the film thickness setting device 1B. .
以上の様に、不発明は測定器と制@部とを電気的に接続
し、あらかじめ記憶さ扛たプログラムに従って、シャッ
タを開閉し、成膜速度又は膜厚を測足し、その成膜情報
によって成膜条件を補正し、製品歩留を同上させるもの
である。As described above, the invention electrically connects the measuring device and the control unit, opens and closes the shutter according to a pre-stored program, measures the film deposition rate or film thickness, and uses the film deposition information. This corrects the film forming conditions and improves the product yield.
次に、連続して複数枚の基板に成膜する場合について説
明する0但し、この場合第2図の測定器7は成膜速度を
検出するものとする。Next, a case in which films are continuously formed on a plurality of substrates will be described. However, in this case, it is assumed that the measuring device 7 in FIG. 2 detects the film forming speed.
先ず、1枚目の基板16に成膜する。ぞの際、あらかじ
め記憶されたプログラムに従っ−Cシャッタ9が開閉し
、適宜のタイミングで成膜速度が成膜情報dとして中央
処理部12に入力さ扛る。中央処理部12は成膜情報d
を時間積分し、膜厚を計算する。そして、該!i舞1i
!fと膜厚設定器18の設定値が一致−rる゛まで成膜
倉行なう。First, a film is formed on the first substrate 16. At this time, the C-shutter 9 opens and closes according to a pre-stored program, and the film-forming speed is inputted to the central processing unit 12 as film-forming information d at an appropriate timing. The central processing unit 12 receives film formation information d
Integrate over time and calculate the film thickness. And that! i Mai1i
! Film deposition is continued until f and the setting value of the film thickness setting device 18 match -r.
2枚目以縫の成膜は、1枚目の成膜に費した時間を記憶
しておき、当該記憶時間だけ成膜を行う。When forming the second and subsequent films, the time spent on forming the first film is memorized, and film formation is performed for the memorized time.
その際、適宜のタイミングで成膜速度をチェックし、必
要に応じて成膜時間の補正を行う様にしても良い。At this time, the film formation rate may be checked at an appropriate timing, and the film formation time may be corrected as necessary.
尚、上記の連続成膜は、測定器7が成膜器Ifを検出す
る場合だけでなく、膜厚を検出する場合も同様に実施で
きるものである。Note that the continuous film formation described above can be performed not only when the measuring device 7 detects the film forming device If, but also when detecting the film thickness.
又、上記の動作において、基板16の処理室1への出入
は、第1図に示す従来の連続成膜装置と全く同様に行な
われるものである。Further, in the above operation, the movement of the substrate 16 into and out of the processing chamber 1 is performed in exactly the same manner as in the conventional continuous film forming apparatus shown in FIG.
以上の説明から明らかな様に、不発明によ扛ば、成膜速
度又は膜厚の測定器と制御部が電気的に接続さn、成膜
時間又は供給電力が自動的に補正できる。従って、基板
の設定枚数ごとに成膜時間又は供給電力が定期的に自動
補正され、連続して複数の基板を成膜することが可能に
なり、しかも基板上に付着する膜厚の精度が同上する。As is clear from the above description, according to the invention, the film forming rate or film thickness measuring device and the control unit are electrically connected, and the film forming time or the supplied power can be automatically corrected. Therefore, the deposition time or power supply is automatically corrected periodically for each set number of substrates, making it possible to deposit films on multiple substrates in succession, and the accuracy of the film thickness deposited on the substrates is the same as above. do.
父、振動子式センサを成膜位置とほぼ同一のレベルに配
置することができるので、上記の自動補正は更に正確な
ものとなり、製品歩留が同上する効果をm−fる。Furthermore, since the vibrator type sensor can be placed at almost the same level as the film forming position, the above automatic correction becomes even more accurate, and the effect of improving the product yield is reduced.
第1図は従来の連続成膜装置をボすブロック図、
−第2図は本発明の連続成膜装置の一実施例を示すブロ
ック図で&)る。
1“°・処理M、 2.s・・・ゲートパルプ
4・・・成膜源、 b・・・搬送手段6・・・
検出D(振動子式センサ)、 7・・・測定器8・・
・を源、 9・・・シャッタ10・・・制御
部、 11・・・人出力部12・・・中央処理部
、 16・・・電力設定器14・・・成膜時間設定器
、 15・・・開閉スイッチ16・・・基板、1
7・・・成膜速度設定器18・・・膜厚設定器、
a・・・成膜信号b・・・電力、 C・・・
開閉信号d・・・成MX情報〇Figure 1 is a block diagram of a conventional continuous film deposition system.
- FIG. 2 is a block diagram showing an embodiment of the continuous film forming apparatus of the present invention. 1"°・Processing M, 2.s...Gate pulp 4...Film forming source, b...Transporting means 6...
Detection D (oscillator type sensor), 7... Measuring device 8...
- Source, 9... Shutter 10... Control section, 11... Human output section 12... Central processing section, 16... Power setting device 14... Film forming time setting device, 15. ... Open/close switch 16... Board, 1
7... Film-forming speed setting device 18... Film thickness setting device,
a... Film formation signal b... Electric power, C...
Opening/closing signal d...Single MX information〇
Claims (1)
けられた検出器の出力を受は膜厚又は成膜速度を成膜情
報として出力する測定器と、成膜源と検出器の間に設け
られ開状態で検出器を作動可能の状態にするシャッタと
、所定のタイミングで所定の時間だけシャッタを開状態
にする信号を送出し、かつ該タイミングで測定器から出
力される成膜情報に基づいて成膜に供給する電力値又は
電力供給時間を制御する制御手段とを有してなることを
特徴とする連続成膜装置。A deposition source that deposits a deposition material onto a substrate, a measuring device that receives the output of a detector installed near the substrate and outputs film thickness or deposition rate as deposition information, and a deposition source and detector. A shutter is provided between the sensor and the sensor to enable the detector to operate when it is open, and a shutter that sends a signal to open the shutter for a predetermined time at a predetermined timing and outputs a signal from the measuring instrument at the timing. 1. A continuous film forming apparatus, comprising: a control means for controlling a power value or power supply time to be supplied for film formation based on film information.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11852182A JPS5910339A (en) | 1982-07-09 | 1982-07-09 | Continuous film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11852182A JPS5910339A (en) | 1982-07-09 | 1982-07-09 | Continuous film forming device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5910339A true JPS5910339A (en) | 1984-01-19 |
JPS6347504B2 JPS6347504B2 (en) | 1988-09-22 |
Family
ID=14738670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11852182A Granted JPS5910339A (en) | 1982-07-09 | 1982-07-09 | Continuous film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5910339A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104746034A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PVD (physical vapor deposition) chamber shielding plate detecting device and PVD chamber |
WO2017191796A1 (en) * | 2016-05-06 | 2017-11-09 | 株式会社アルバック | Thin-film production device, and thin-film production method |
-
1982
- 1982-07-09 JP JP11852182A patent/JPS5910339A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104746034A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PVD (physical vapor deposition) chamber shielding plate detecting device and PVD chamber |
WO2017191796A1 (en) * | 2016-05-06 | 2017-11-09 | 株式会社アルバック | Thin-film production device, and thin-film production method |
KR20180110004A (en) * | 2016-05-06 | 2018-10-08 | 가부시키가이샤 알박 | Thin Film Manufacturing Device, Thin Film Manufacturing Method |
JPWO2017191796A1 (en) * | 2016-05-06 | 2018-10-25 | 株式会社アルバック | Thin film manufacturing apparatus and thin film manufacturing method |
CN109154071A (en) * | 2016-05-06 | 2019-01-04 | 株式会社爱发科 | Apparatus for manufacturing thin film, film-forming method |
Also Published As
Publication number | Publication date |
---|---|
JPS6347504B2 (en) | 1988-09-22 |
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