JP2011214025A - Vacuum vapor deposition apparatus, film thickness measuring method, and vacuum vapor deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film thickness measuring method capable of measuring the thickness of a deposited thin film over a wider range, and to provide a vacuum vapor deposition apparatus and a vacuum vapor deposition method for depositing a thin film of the uniform thickness.SOLUTION: A thin film material 60 is irradiated with electron beam so as to emit the vapor from the thin film material 60. When a thin film is deposited on the surface of an object 80 to be film-deposited while making the object 80 run with respect to the thin film material 60, the intensity of X-ray which is emitted from the thin film material 60 and transmitted through the thin film and the object 80 is detected by an X-ray detection device 20 on the object 80. The thickness of the thin film deposited on the object 80 is measured from the correspondence relationship between the stored intensity of the transmitted X-ray and the thickness of the thin film. By comparing the result of measurement with the reference value, the moving speed of the object 80 and the moving speed of the irradiation position of electron beam are changed based on the result of comparison, and the thickness of the thin film is increased or reduced so that the thickness of the thin film is made close to the reference value.

Description

  The present invention relates to a vacuum deposition apparatus, a film thickness measuring method, and a vacuum deposition method, and more particularly to the field of performing vacuum deposition by evaporating a thin film material by electron beam irradiation.

Currently, an electron gun that emits a high-power electron beam capable of dissolving, evaporating, and sublimating an irradiation target is used in a high-speed continuous winding vacuum deposition apparatus that has a relatively large energy.
Here, the high-power electron beam is an electron beam having an energy of several kV to several tens of kV, a current of ampere order, an output of several kW to 1,000 kW, and even higher.
A conventional vacuum deposition apparatus holds a relatively large vacuum chamber having a volume of 1 m ³ or more, an evacuation device that evacuates the inside of the vacuum chamber, an electron gun that emits an electron beam into the vacuum chamber, and an object to be irradiated. And an irradiation material container. Here, the irradiation material container is a water-cooled hearth and is usually made of copper having good heat conduction.
The irradiation object is mainly a metal such as aluminum, titanium, or copper.
In an evacuated vacuum chamber, these irradiation objects are irradiated with an electron beam from an electron gun, vapor is released from the irradiation object, and the emitted vapor reaches the surface of the film formation object, A thin film is formed on the surface of the film formation target.
As a method for measuring the film thickness of the thin film thus formed, a method for detecting the amount of visible light transmitted and absorbed has been conventionally used.
However, the method of detecting the amount of visible light transmitted and absorbed requires a large cost of about 6 million yen or more per device, and the measurable film thickness range is narrow because the visible light transmission power is weak ( There was a problem of an aluminum thin film of about 0.3 μm or less.

JP-A-5-172532

  The present invention was created to solve the above-mentioned disadvantages of the prior art. The purpose of the present invention is to provide a film thickness measuring method capable of measuring a film thickness of a formed thin film in a wider range than before, and a uniform film thickness. An object of the present invention is to provide a vacuum deposition apparatus and a vacuum deposition method capable of forming a thin film.

In order to solve the above problems, the present invention has a vacuum chamber, a vacuum exhaust device that evacuates the vacuum chamber, and an electron gun configured to emit an electron beam into the vacuum chamber, The thin film material disposed in the vacuum chamber is irradiated with an electron beam from the electron gun to release vapor from the thin film material, and the thin film is applied to the surface of the film formation target disposed at the position where the vapor is incident. A vacuum deposition apparatus for forming a film, which is disposed on the opposite side of the thin film material as viewed from the film formation target, and is emitted from the thin film material irradiated with the electron beam, and the thin film and the film formation target An X-ray detector that detects the intensity of transmitted X-rays that have passed through the storage device, a storage device that stores a correspondence relationship between the intensity of the transmitted X-rays and the film thickness of the thin film, and the X-ray detector. The intensity of the detected transmitted X-ray and the stored in the storage device And a serial relationship, is a vacuum vapor deposition apparatus having a measuring device for measuring the thickness of the thin film.
The present invention is a vacuum deposition apparatus, comprising: a deposition target moving unit that moves the deposition target relative to the thin film material while forming a thin film on the surface of the deposition target. Device.
The present invention is a vacuum vapor deposition apparatus, which compares the film thickness of the thin film measured by the measurement apparatus with a reference value, and from the comparison result, determines the film thickness of the thin film formed on the surface of the film formation target. It is a vacuum evaporation apparatus having a control device configured to increase or decrease the thickness of the thin film formed on the surface of the film formation target to be close to the reference value.
The present invention is a vacuum deposition apparatus, wherein the control device controls the film formation target moving unit to change a moving speed of the film formation target and is formed on the surface of the film formation target. A vacuum deposition apparatus configured to increase or decrease the thickness of the thin film.
The present invention is a vacuum deposition apparatus configured such that the electron gun changes the irradiation direction of the electron beam and moves the irradiation position of the electron beam on the surface of the thin film material, and the control device includes: The vacuum deposition apparatus is configured to change the moving speed of the irradiation position to increase or decrease the thickness of the thin film formed on the surface of the film formation target.
The present invention is a vacuum vapor deposition apparatus, which compares the film thickness of the thin film measured by the measurement apparatus with a reference value, and from the comparison result, determines the film thickness of the thin film formed on the surface of the film formation target. And a control device configured to increase or decrease the film thickness of the thin film formed on the surface of the film formation object close to a predetermined value, the electron gun changes an irradiation direction of the electron beam, and the electron The irradiation device is configured to move the irradiation position of the line on the surface of the thin film material, and the measuring device has a plurality of measurement positions in a direction perpendicular to the traveling direction of the film formation target on the film formation target. The controller is configured to measure a film thickness, and the control device compares the measured value of the film thickness at each of the measurement positions with the reference value, at a location facing each of the measurement positions on the thin film material. It is configured to change the moving speed of the irradiation position for each irradiation position. It was a vacuum vapor deposition apparatus.
The present invention is the vacuum deposition apparatus in which the film formation target is a belt-like film, wherein the film formation target moving unit is positioned from a position where the vapor is incident on the movement direction of the film formation target. A vacuum deposition apparatus configured to wind up the film on the end point side.
The present invention irradiates a thin film material with an electron beam in an evacuated vacuum chamber, releases vapor from the thin film material, and deposits the thin film on the surface of a film formation target disposed at the position where the vapor is incident. A film thickness measuring method for measuring a film thickness of the thin film when forming a film, wherein the thin film is released from the thin film material before forming the thin film on the surface of the film formation target, and A correspondence relationship between the intensity of transmitted X-rays that have been sequentially transmitted through the film object and the film thickness of the thin film is stored, and when the thin film is formed on the surface of the film formed object, the transmitted X-rays are stored. Is a film thickness measurement method for measuring the film thickness of the thin film from the detected intensity of the transmitted X-ray and the stored correspondence relationship.
In the present invention, the thin film material is irradiated with an electron beam in an evacuated vacuum chamber to release vapor from the thin film material, and the film formation target is moved and moved relative to the thin film material. A vacuum vapor deposition method for forming a thin film on the surface of a film object, wherein a reference value of the thickness of the thin film is determined before forming the thin film on the surface of the film object, When forming a thin film on the surface of an object, the film thickness of the thin film is measured by the film thickness measurement method, and the measured film thickness of the thin film is compared with the reference value. In this vacuum evaporation method, the film thickness of the thin film formed on the surface of the object is increased or decreased to bring the film thickness of the thin film formed on the surface of the film formation object close to the reference value.
The present invention is a vacuum deposition method, and after comparing the measured thickness of the thin film with the reference value, from the comparison result, the moving speed of the film formation object is changed to change the surface of the film formation object. It is a vacuum evaporation method which increases / decreases the film thickness of the said thin film formed in this.
The present invention is a vacuum deposition method in which when the electron beam is irradiated onto the thin film material, the irradiation direction of the electron beam is changed, and the irradiation position of the electron beam on the surface of the thin film material is moved. After comparing the film thickness of the thin film and the reference value, from the comparison result, the moving speed of the irradiation position is changed to increase or decrease the film thickness of the thin film formed on the surface of the film formation target. It is a vapor deposition method.
In the present invention, when the thin film material is irradiated with the electron beam in an evacuated vacuum chamber, the irradiation direction of the electron beam is changed, the irradiation position of the electron beam on the surface of the thin film material is moved, and A vacuum deposition method for depositing a thin film on a surface of the film formation target while discharging the vapor from the thin film material and moving the film formation target with respect to the thin film material, the film formation target Before forming a thin film on the surface of the film, a reference value of the film thickness of the thin film is determined, and when the thin film is formed on the surface of the film formation target, the film formation is performed on the film formation target. The film thickness measurement method measures the film thickness at a plurality of measurement positions in a direction perpendicular to the traveling direction of the object, compares the film thickness measurement value at each measurement position with the reference value, and compares the results. From the above, the moving speed of the irradiation position at the position facing each measurement position on the thin film material is referred to. By changing the position, the film thickness of the thin film formed on the film formation target is increased or decreased, and the film thickness of the thin film formed on the surface of the film formation target is brought close to the reference value. is there.

  When the irradiation position of the electron beam on the surface of the thin film material is moved, the irradiation position is moved at a moving speed having a component perpendicular to the moving direction of the film formation target.

The film thickness of the deposited thin film can be measured at about half the cost compared to the conventional method of detecting the amount of visible light transmitted and absorbed. Moreover, operation cost is not required as compared with the conventional quartz film thickness meter method.
The film thickness range (dynamic range) of the thin film that can be measured is dependent on conditions such as the light transmittance and X-ray transmittance of the film forming material compared to the conventional method of detecting the amount of visible light transmitted and absorbed. Can be magnified 10 times or more, and can be enlarged 100 times or more if the conditions are good.
It is possible to produce a thin film product having a uniform film thickness and good quality. For example, it can contribute to quality improvement of high storage media such as film capacitors and magnetic tapes, and optical application films such as heat ray blocking films.

Internal configuration diagram of the vacuum deposition apparatus according to the present invention Schematic diagram showing the periphery of the X-ray detection device in three dimensions Schematic configuration diagram for explaining the structure of the electron gun Schematic configuration diagram for explaining the structure of the X-ray detection apparatus

The structure of the vacuum deposition apparatus according to the present invention will be described.
FIG. 1 shows an internal configuration diagram of the vacuum deposition apparatus 10.
The vacuum evaporation apparatus 10 includes a vacuum chamber 11, an evacuation apparatus 13, a thin film material container 50, an electron gun 30, a film formation target holding unit 70, and an X-ray detection apparatus 20.
The vacuum exhaust device 13 is connected to the vacuum chamber 11 and configured to evacuate the vacuum chamber 11.
Here, the thin film material container 50 is a boat-shaped water-cooled copper hearth, and has a narrow recess in a planar shape. The length of the concave portion in the longitudinal direction is 10 to 20% longer than the width of the film formation region of the film formation target 80 to be described later.
The thin film material container 50 is disposed at the bottom of the vacuum chamber 11 with the opening of the recess facing upward, and is configured to hold the thin film material 60 inside the recess.
A thin film material adding device 12 is provided on the side wall of the vacuum chamber 11 so as to penetrate the side wall in an airtight manner. The thin film material adding device 12 is configured to carry in the thin film material 60 from the outside to the inside of the vacuum chamber 11 while maintaining the vacuum atmosphere in the vacuum chamber 11 and to load the thin film material 60 into the recess of the thin film material container 50. Has been.

FIG. 3 shows a schematic configuration diagram of the electron gun 30.
The electron gun 30 has a bottomed cylindrical casing 31 provided with a muzzle 114 at one end.
Inside the casing 31, a gun chamber 110, a connection path 111, an intermediate chamber 112, and a discharge path 113 are provided in this order from the bottom of the casing 31 toward the muzzle 114 on the central axis.
A vacuum exhaust unit (not shown) is connected to each of the gun chamber 110 and the intermediate chamber 112, and the vacuum exhaust unit is configured so that each chamber 110, 112 can be evacuated. The connection path 111 is formed so that the inner periphery is smaller than the gun chamber 110 and the intermediate chamber 112, and is configured to connect the inside of the gun chamber 110 and the inside of the intermediate chamber 112. Therefore, the connection path 111 between the gun chamber 110 and the intermediate chamber 112 is connected. And has a differential exhaust structure. A partition valve 39 is disposed inside the connection path 111.
The interior of the intermediate chamber 112 is connected to the muzzle 114 via the discharge path 113.
Hereinafter, the gun chamber 110 side of the casing 31 is referred to as upstream, and the opposite muzzle 114 side is referred to as downstream.

In the gun chamber 110, the filament 32, the cathode 33, the Wehnelt 34, and the anode 35 are arranged in this order from upstream to downstream on the central axis of the casing 31.
A filament power supply 41 is electrically connected to the filament 32. The filament power source 41 is configured to heat the filament 32 by passing a current through the filament 32.
A cathode heating power source 42 is electrically connected to the filament 32 and the cathode 33. The cathode heating power source 42 is configured to be able to apply a voltage between the filament 32 and the cathode 33 so that the potential of the cathode 33 becomes positive with respect to the filament 32.
The Wehnelt 34 is formed in a bottomless cylindrical shape having a larger inner circumference than the cathode 33, and is directed so that its own central axis coincides with the central axis of the casing 31. The Wehnelt 34 is electrically connected to the cathode 33.
The anode 35 is formed in a bottomless cylindrical shape, and is directed so that its center axis coincides with the center axis of the housing 31. The anode 35 is electrically connected to the housing 31.

A high voltage power supply 43 is electrically connected to the casing 31 and the cathode 33. The high voltage power supply 43 is configured to be able to apply a voltage between the casing 31 and the cathode 33 so that the potential of the cathode 33 is negative with respect to the potential of the casing 31, that is, the potential of the anode 35.
Downstream of the anode 35, a first lens 36, a second lens 37, and a swing coil 38 are arranged in this order along the central axis of the housing 31.
Here, the first lens 36 is disposed outside the connection path 111 so as to surround the connection path 111, and the second lens 37 is disposed outside the discharge path 113 so as to surround the discharge path 113.
A lens power supply 44 is electrically connected to each of the first and second lenses 36 and 37. The lens power supply 44 is configured to cause a current to flow through the first lens 36 to form a magnetic field in the connection path 111 and to cause a current to flow through the second lens 37 to form a magnetic field in the emission path 113. Yes.

The swing coil 38 is disposed so as to surround the muzzle 114 outside the discharge path 113. A coil power supply 45 is electrically connected to the swing coil 38. The coil power supply 45 is configured to cause a current to flow through the oscillating coil 38 and form a magnetic field in the trajectory of the electron beam located inside the muzzle 114.
A magnetic field controller (not shown) is connected to the coil power supply 45. The magnetic field control device is configured to determine the direction and amount of current supplied from the coil power supply 45 to the oscillating coil 38 and to control the direction and magnitude of the magnetic field formed in the trajectory of the electron beam.
When the power supply device of the electron gun 30 is referred to as an electron gun power supply 40, the electron gun power supply 40 includes a filament power supply 41, a cathode heating power supply 42, a high voltage power supply 43, a lens power supply 44, and a coil power supply 45.

Referring to FIG. 1, here, the electron gun 30 is hermetically inserted into the side wall of the vacuum chamber 11 with the muzzle 114 facing the thin film material 60 in the thin film material container 50.
When electric power is supplied from the electron gun power source 40 to the electron gun 30, the electron gun 30 emits an electron beam from the muzzle 114 into the vacuum chamber 11 and irradiates the thin film material 60 in the thin film material container 50 with the electron beam. It is configured as follows.
Further, by controlling the current flowing from the electron gun power supply 40 to the oscillation coil 38 of the electron gun 30, the irradiation direction of the electron beam emitted from the electron gun 30 is changed, and the irradiation position of the electron beam on the surface of the thin film material 60 is changed. Are moved in a moving direction having a component parallel to at least the longitudinal direction of the thin film material 60.
When the thin film material 60 is irradiated with an electron beam and heated, vapor is released from the thin film material 60.
The film formation target holding unit 70 is disposed above the thin film material container 50. When the vapor is released from the thin film material 60 in the thin film material container 50, the vapor reaches the surface of the film formation target 80 held by the film formation target holding unit 70 and adheres to the film formation target 80. A thin film is formed on the surface.
Here, the film formation target 80 is a belt-like film, and is formed by being wound into a roll before film formation.

The film formation target holding unit 70 includes a drive shaft 71, a driven shaft 72, and a drive shaft rotating device 73 here.
The drive shaft 71 and the driven shaft 72 are disposed above the thin film material container 50 and spaced apart from each other along the width direction of the concave portion of the thin film material container 50, and are respectively parallel to the longitudinal direction of the concave portion of the thin film material container 50. Is directed.
The driven shaft 72 is inserted into the center of the roll of the film formation target 80, and the end of the film formation target 80 drawn from the outer periphery of the roll is wound around the drive shaft 71. Therefore, the width direction of the film formation target 80 attached to the film formation target holding unit 70 is parallel to the longitudinal direction of the concave portion of the thin film material container 50.
The drive shaft rotating device 73 is connected to the drive shaft 71 and configured to be able to rotate the drive shaft 71 around the central axis of the drive shaft 71.
When the drive shaft 71 is rotated by the drive shaft rotating device 73, the film formation target 80 wound around the drive shaft 71 is pulled, and the driven shaft 72 is rotated by the force, and the film formation target 80 is fed out of the roll. It is.
At this time, a force opposite to the rotational force due to the pulling force applied to the roll is generated on the driven shaft 72, and the film forming object 80 is caused to move between the drive shaft 71 and the driven shaft 72 by the two forces. It is designed to be stretched between the two.

When the drive shaft 71 is further rotated, the film formation target 80 travels from the driven shaft 72 toward the drive shaft 71 while maintaining planarity between the drive shaft 71 and the driven shaft 72, and the drive shaft 71 71 is wound into a roll shape. Reference numeral 5 indicates a moving direction of the film formation target 80.
A device that moves the film formation target 80 relative to the thin film material 60 is called a film formation target moving unit. Here, the film formation target moving unit includes a drive shaft 71, a driven shaft 72, and a drive shaft rotating device. 73.
Here, since the driven shaft 72 and the drive shaft 71 are spaced apart from each other along the width direction of the concave portion of the thin film material container 50, the movement of the film formation target 80 attached to the film formation target holding unit 70. The direction is parallel to the width direction of the concave portion of the thin film material container 50.
Between the film formation object 80 held by the film formation object holding unit 70 and the thin film material 60 in the thin film material container 50, an adhesion preventing plate 75 that shields vapor particles is formed on the film formation object 80. It is arranged to cover the bottom.

A long and narrow opening through which X-rays and steam pass is provided at a position facing the thin film material container 50 in the deposition preventing plate 75. The longitudinal direction of the opening of the deposition preventing plate 75 is parallel to the longitudinal direction of the concave portion of the thin film material container 50, and is formed 10 to 20% longer than the width of the film formation region of the film formation target 80.
When the vapor is released from the thin film material 60, the vapor incident on the opening of the deposition preventing plate 75 passes through the opening of the deposition preventing plate 75 and reaches the film formation target 80 facing the opening of the deposition preventing plate 75. The vapor incident on the shielding portion outside the opening of the deposition preventing plate 75 is shielded by the deposition preventing plate 75, so that it does not reach the film formation target 80 facing the shielding portion.
When vapor is released from the thin film material 60 while rotating the drive shaft 71, the film formation target 80 moves from the driven shaft 72 side toward the drive shaft 71, so that it starts to face the opening of the deposition preventing plate 75. The thin film is not formed on the film formation target 80 before the opening, and the film thickness of the thin film formed on the film formation target 80 is closer to the drive shaft 71 side after starting to face the opening of the deposition preventing plate 75. The thickness of the thin film formed on the film formation target 80 does not change and becomes constant after the opening of the deposition preventing plate 75 and the facing are finished.
Here, the length in the longitudinal direction of the concave portion of the thin film material container 50 and the opening of the deposition preventing plate 75 is set to be 10% to 20% longer than the width of the film forming region of the film forming target 80. In the vicinity of both ends of the film formation region of the object 80 in the width direction (direction perpendicular to the moving direction), it is prevented that the amount of vapor reached decreases and the film thickness decreases.

When the thin film material 60 is irradiated with an electron beam having keV order energy as in this embodiment, X-rays (characteristic X-rays and white X-rays) are emitted from the thin film material 60. Here, characteristic X-rays are X-rays emitted from atoms on the surface of the thin film material 60 excited by irradiation with an electron beam, and white X-rays are emitted from electrons of an electron beam damped on the surface of the thin film material 60. X-rays.
At least a part of the X-rays emitted from the thin film material 60 passes through the opening of the deposition preventing plate 75 and enters the film formation target 80 facing the opening of the deposition preventing plate 75. In the present invention, the shielding portion other than the opening of the deposition preventing plate 75 may be formed of a material that shields incident X-rays as long as it is formed of a material that shields incident vapor. May be formed.

FIG. 4 shows a schematic configuration diagram of the X-ray detection apparatus 20. Here, the X-ray detection apparatus 20 includes a plurality of X-ray detectors 20a to 20d. Since the structures of the X-ray detectors 20a to 20d are the same, the structure will be described by taking the X-ray detector 20a as an example.
The X-ray detector 20a has a detector container 21 made of a material that blocks X-rays. An X-ray detection unit 24 is disposed inside the detection unit container 21.
Since the energy of the electron beam in this embodiment is about several keV to 40 keV as will be described later, the energy of the X-ray emitted from the thin film material 60 irradiated with the electron beam is in the same range. As the X-ray detector 24, an X-ray detector having sensitivity to X-rays having energy in this range is used.
As long as the X-ray detection unit 24 satisfies the above requirements, various types of X-ray detection units can be used by selecting features from commercially available X-ray detection units.
For example, GM counters (Geiger-Muller counters) and proportional counters are typical examples of detectors that use gas ionization. However, since these gas detectors increase in size in principle, it is preferable to use a solid state detector typified by a semiconductor diode detector rather than a gas detector.

A scintillation counter using a scintillation caused by X-rays can also be used as the X-ray detection unit. In this method, flash light generated by X-rays is detected by a photomultiplier tube. There are many materials (scintillators) that generate light regardless of whether they are gases, liquids, or solids, but sodium iodide (NaI (Tl)) crystals to which a small amount of thallium iodide is added are often used.
An X-ray detector power source 25 is electrically connected to the X-ray detector 24, and the X-ray detector power source 25 is configured to be able to apply a voltage to the X-ray detector 24.
A detection window 23 is disposed between the X-ray detection unit 24 and the opening of the detection unit container 21.
A thing attached to the above-mentioned commercially available detector can be used for the detection window 23 as it is. In general, it is necessary to select a material that can transmit X-rays having a wide energy range for the detection window 23. However, since the power to transmit X-rays with higher energy is larger, if a material that can transmit X-rays with lower energy is selected. Therefore, a material composed of an element having a low atomic number is generally selected as the material of the detection window 23. For example, Be material is used for metal, and glass or plastic material is used for non-metal.

A window 22 is disposed on the opposite side of the X-ray detection unit 24 with the detection window 23 in the center so as to cover the opening of the detection unit container 21, and the window 22 is airtightly fixed to the opening of the detection unit container 21. ing. The window portion 22 is thin so that X-rays can pass therethrough, and is formed to have a strength to keep the inside of the detection portion container 21 airtight as a vacuum wall.
The window portion 22 can be made of a low atomic number metal (Be, Al, Si, Ti, etc.), glass or plastic. Further, these materials reinforced with a metal mesh such as stainless steel can be used more safely.
Since the detection unit container 21 is made of a material that blocks X-rays, only the X-rays that pass through the window 22 reach the X-ray detection unit 24 when the X-rays enter the X-ray detector 20a. It is supposed to be.
The window 22 is configured to keep the inside of the detection unit container 21 airtight together with the detection unit container 21. When the X-ray detector 20a is disposed in the evacuated vacuum chamber 11, the detection window 23 and the X-rays are arranged. It plays the role which isolate | separates the detection part 24 from a vacuum atmosphere.

Referring to FIG. 1, each of the X-ray detectors 20 a to 20 d is arranged on the opposite side of the thin film material 60 as viewed from the film formation target 80, so that the window 22 faces the back surface of the film formation target 80. Is directed.
Since the vapor particles incident on the film formation target 80 do not pass through the film formation target 80, the vapor does not reach the X-ray detectors 20a to 20d, and the vapor adheres to the X-ray detectors 20a to 20d. As a result, the X-ray detection performance does not deteriorate.
Between each X-ray detector 20a-20d and the film-forming target 80, the shielding board 76 which shields X-rays is arrange | positioned, and the window part 22 of each X-ray detector 20a-20d of the shielding board 76 faces. An opening for allowing X-rays to pass therethrough is provided in the portion.
When X-rays are incident on the film formation target 80, when the film formation target 80 is formed of a material that transmits at least a part of the X-rays, the transmitted X-rays transmitted through the film formation target 80 are , Enters the shielding plate 76. The transmitted X-rays that enter the opening of the shielding plate 76 pass through the opening and enter the windows 22 of the X-ray detectors 20a to 20d that face the opening, and are shielded outside the opening of the shielding plate 76. The X-rays incident on the part are shielded by the shielding part and do not enter the X-ray detectors 20a to 20d.
When the positions of the film formation target 80 facing the X-ray detectors 20a to 20d are referred to as measurement positions, the X-ray detectors 20a to 20d transmit X through the measurement positions of the film formation target 80 facing each other. The intensity of the line can be detected.

FIG. 2 is a schematic diagram three-dimensionally showing the periphery of the X-ray detectors 20a to 20d.
Here, the X-ray detectors 20a to 20d are arranged at equal intervals along the width direction perpendicular to the traveling direction of the film formation target 80. Accordingly, each of the X-ray detectors 20 a to 20 d is configured to detect the intensity of transmitted X-rays at a plurality of measurement positions located at equal intervals along the width direction of the film formation target 80.
Here, each of the X-ray detectors 20a to 20d is disposed directly above a predetermined position near the end of the deposition target 80 in the moving direction of the opening of the deposition preventing plate 75. .
The film thickness of the thin film formed on the film formation target 80 is moved while the film formation target 80 moves from the position facing each of the X-ray detectors 20a to 20d to the position where the opening of the deposition preventive plate 75 ends. The increase amount is negligibly small, and when the thin film attenuates the intensity of incident X-rays according to the film thickness, the intensity of transmitted X-rays incident on the X-ray detectors 20a to 20d is the end of film formation. It can be regarded as the intensity of transmitted X-rays transmitted through a thin film having the same thickness as that later.

A measuring device 17 is connected to each of the X-ray detectors 20a to 20d, and a storage device 18 is connected to the measuring device 17.
The storage device 18 sequentially transmits the thin film on the surface of the film formation target 80 and the film formation target 80 when the thin film material 60 is irradiated with an electron beam having a predetermined power as will be described later. The correspondence between the line intensity and the film thickness of the thin film is stored.
The measuring device 17 performs a plurality of measurements perpendicular to the traveling direction of the film formation target 80 based on the intensity of the transmitted X-rays detected by the X-ray detectors 20a to 20d and the correspondence relationship stored in the storage device 18. The thickness of the thin film at the position is measured.
After measuring the film thickness of the thin film with the measuring device 17, for example, manually compare the measured value with the reference value, and increase or decrease the film thickness of the thin film formed on the surface of the film formation target 80 from the comparison result. Thus, the film thickness of the thin film formed on the film formation target 80 can be brought close to the reference value.

Here, a control device 19 is connected to the measuring device 17 and the storage device 18. The control device 19 stores a target reference value for the film thickness of the thin film and the installation positions of the X-ray detectors 20a to 20d. The film thickness of the thin film at each measurement position measured by the measurement device 17 is stored. The film thickness of the thin film formed on the surface of the film formation target 80 is increased or decreased from the comparison result so that the film thickness of the thin film formed on the surface of the film formation target 80 approaches the reference value. It is configured.
Here, the control device 19 is connected to the electron gun power source 40 and the film formation target moving unit.

  The control device 19 sends a control signal to the electron gun power source 40, changes the irradiation direction of the electron beam emitted from the electron gun 30, changes the moving speed of the irradiation position on the thin film material 60, and forms the film formation target. The film thickness of the thin film formed on the surface of the object 80 can be increased or decreased, and a control signal is sent to the film formation object moving unit to change the moving speed of the film formation object 80 to form a film. The thickness of the thin film formed on the surface of the object 80 can be increased or decreased.

Next, a vacuum vapor deposition method using the above-described vacuum vapor deposition apparatus 10 will be described by taking as an example a case where an aluminum thin film is formed on a film-shaped film formation target 80.
The film formation target 80 needs to be formed of a material that transmits at least a part of incident X-rays. Here, the film formation target 80 has a width of 600 to 1200 mm, a thickness of 2 to 3 μm, and one roll. A film of PET, PP, polyimide or the like having a length of 1600 m is used.
The thin film material 60 is made of aluminum (Al). An aluminum film attenuates the intensity of incident X-rays according to the film thickness, but an aluminum film having a target film thickness (several hundred nm) can transmit at least part of incident X-rays.

Referring to FIG. 1, first, as a test process, a roll made of a test film formation target 80 is carried into the vacuum chamber 11 and attached to the film formation target holding unit 70.
The inside of the vacuum chamber 11 is evacuated by the evacuation device 13. Thereafter, evacuation is continued and the vacuum atmosphere in the vacuum chamber 11 is maintained.
The thin film material adding device 12 loads aluminum, which is the thin film material 60 shaped into an elongated shape, into the vacuum chamber 11 and loads the aluminum into the concave portion of the thin film material container 50.

Referring to FIG. 3, when the inside of the vacuum chamber 11 is evacuated, the inside of the housing 31 of the electron gun 30 is also evacuated.
When the pressure in the vacuum chamber 11 enters the 10 ⁻² Pa range, the inside of the gun chamber 110 and the intermediate chamber 112 of the electron gun 30 is evacuated by an exhaust system (not shown), and the partition valve 39 is opened.
Since the intermediate chamber 112 is provided and the working exhaust structure is provided, the pressure in the vacuum chamber 11 is increased by electron beam irradiation and the like, and the pressure in the gun chamber 110 is reduced to about 1 × 10 ⁻¹ Pa. It can be kept at ^10-3 Pa or less. Thereby, abnormal discharge in the gun chamber 110 can be prevented, and burning of the filament 32 and the cathode 33 can be prevented.
The casing 31, the anode 35, the vacuum chamber 11 and the thin film material container 50 of the electron gun 30 are all electrically grounded.
A voltage is applied between the filament 32 and the cathode 33 so that the potential of the cathode 33 becomes positive with respect to the potential of the filament 32. Further, a voltage is applied between the cathode 33 and the anode 35 so that the potential of the cathode 33 is negative (in this case, −40 kV) with respect to the ground potential (0 V) of the anode 35. Further, a current is passed through the first and second lenses 36 and 37 to form magnetic fields inside the connection path 111 and the discharge path 113, respectively, and a current is passed through the oscillating coil 38 to the inside of the muzzle 114. A magnetic field is formed.

When the intermediate chamber 112 enters the 10 ⁻³ Pa level and the gun chamber 110 enters the 10 ⁻⁴ Pa level, current is supplied from the filament power supply 41 to the filament 32 to heat the filament 32. When the filament 32 reaches a high temperature (here, 2800 K), thermoelectrons are generated from the filament 32.
The thermoelectrons are accelerated toward the cathode 33, collide with the cathode 33, and heat the cathode 33.
Thermoelectrons are generated from the heated cathode 33. The amount of generated thermoelectrons increases as the temperature of the cathode 33 increases. The temperature of the cathode 33 is controlled by the cathode heating power source 42, and accordingly, the amount of thermoelectrons generated is controlled by the cathode heating power source 42.
The Wehnelt 34 has the same potential as that of the cathode 33 and serves to suppress the divergence of electrons from the cathode 33 and lead it to the anode 35.
Electrons that have passed through the inside of the cylindrical shape of the anode 35 are converged by the magnetic field of the first lens 36, pass through the opening of the gate valve 39, pass through the intermediate chamber 112, and then converged again by the magnetic field of the second lens 37. The Further, the electrons are subjected to trajectory correction by the magnetic field of the oscillating coil 38 and are emitted into the vacuum chamber 11.
The electrons generated from the cathode 33 in this manner are linearly shaped and transported inside the casing 31 of the electron gun 30 and are therefore usually called electron beams.

As described above, the casing 31, the anode 35, the vacuum chamber 11, and the thin film material container 50 of the electron gun 30 are all electrically grounded, and the thin film material 60 is also electrically grounded via the thin film material container 50. Has been.
The electron beam is first accelerated by the difference (40 kV) between the potential of the cathode 33 (here, −40 kV) and the ground potential (0 V) of the anode 35 to acquire 40 keV energy. Thereafter, the thin film material 60 at the ground potential is irradiated with the energy of 40 keV through the ground potential space (that is, the electric field free space) (see FIG. 1).

In the present embodiment, the power of the electron beam is determined by the current of the electron beam. When the current is 1 A, 40 kV × 1 A = 40 kW.
Aluminum, which is the thin film material 60 irradiated with the electron beam, is heated and melted to release aluminum vapor.
The electron gun power supply 40 is controlled to change the irradiation direction of the electron beam, and the irradiation position of the electron beam is reciprocated at a constant speed along the longitudinal direction of the thin film material 60.
The thin film material 60 is heated uniformly along the longitudinal direction, and vapor is released at a uniform evaporation rate along the longitudinal direction.
The vapor released from the thin film material 60 and passing through the opening of the deposition preventing plate 75 reaches the surface of the film formation target 80 facing the opening of the deposition preventing plate 75 and adheres thereto.

While the test film formation target 80 is kept stationary at the position facing the opening of the deposition preventive plate 75, the electron beam irradiation is continued, and vapor particles are deposited on the surface of the film formation target 80. In the meantime, the intensity of the transmitted X-ray transmitted through the film formation target 80 is detected by each of the X-ray detection devices 20a to 20d, and the detected intensity of the transmitted X-ray is stored together with the elapsed time of the electron beam irradiation.
After the electron beam irradiation is continued for a predetermined time, a control signal is transmitted to the electron gun power source 40 to stop the emission of the electron beam from the electron gun 30. Next, after the test film formation target 80 is taken out from the vacuum chamber 11, the film thickness of the thin film formed on the surface of the test film formation target 80 is measured with a film thickness meter (not shown).
The measured film thickness is divided by the electron beam irradiation time to determine the film forming speed of the thin film material 60, and the detected transmitted X-ray intensity and the film thickness at that time are stored in association with each other.

Next, as a production process, a roll made of a production film formation target 80 is carried into the vacuum chamber 11 and attached to the film formation target holding unit 70.
The film forming speed of the thin film material 60 obtained in the test process, the moving distance of the film forming object 80 (that is, the length of the opening of the deposition preventing plate 75 with respect to the moving direction of the film forming object 80), and the target thin film From the film thickness (reference value), the moving speed of the film-forming object 80 for production is determined, and the film-forming object 80 is moved between the drive shaft 71 and the driven shaft 72 at the determined moving speed. Here, the film-forming target 80 is moved and moved at a speed of about 350 m / min.
An electron beam having the same power as that in the test process is emitted from the electron gun 30 and the irradiation position of the electron beam is moved on the irradiation surface of the thin film material 60 at the same moving speed as in the test process so that the thin film material 60 is heated and evaporated. Let
Since the electron beam is irradiated under the same irradiation conditions as in the test process, vapor is released from the thin film material 60 at the same film formation rate as in the test process.
The emitted vapor reaches the production film forming object 80 that travels and moves in a position facing the opening of the shielding plate 76, and a thin film is formed on the surface of the production film forming object 80.

While irradiating the thin film material 60 with an electron beam, the X-ray detectors 20a to 20d emit the thin film material 60 and form the thin film material 60 on the production target 80, and the production target. The intensity of transmitted X-rays that have passed through 80 in order is detected.
Based on the detected transmitted X-ray intensity and the correspondence stored in the test process, the film thickness of the thin film formed on the production target 80 is measured.
Here, since the electron beam is irradiated with the same power as in the test process, X-rays are emitted from the thin film material 60 with the same intensity as in the test process. Therefore, the correspondence stored in the test process can be used as it is.

In this manner, the film thickness of the formed thin film can be measured while continuously forming the thin film on the surface of the film formation target 80 for production.
In the film thickness measurement method of the present invention, since the amount of X-ray transmission having a greater transmission power than visible light is detected, the film thickness can be measured even with an aluminum film having a thickness of 0.3 μm or more.
Here, the thin film material 60 is irradiated with an electron beam under the same conditions as in the test process, and the film formation target 80 for production is moved at a moving speed calculated from the film forming speed of the thin film material 60. A thin film having a target film thickness is continuously formed on the target film formation object 80.

However, for example, when the amount of the thin film material 60 in the thin film material container 50 decreases with time during the electron beam irradiation, the evaporation amount of the thin film material 60 per unit time decreases, and the film formation rate decreases. Thus, the film thickness of the thin film formed on the surface of the film formation target 80 is reduced.
At this time, the transmitted X-ray intensities detected by the X-ray detectors 20a to 20d all increase with the same magnitude. The measuring device 17 measures the film thickness of the thin film at each measurement position from the intensity of transmitted X-rays at each measurement position. When the measured thickness of the thin film is smaller than the allowable value than the reference value set in the control device 19, the control device 19 determines the measured thin film thickness and the moving speed of the film formation target 80. Based on the movement distance (the length of the opening of the shielding plate 76 with respect to the movement direction of the film formation target 80), the amount of change in the movement speed of the film formation target 80 is calculated, and based on the calculation result, the film formation target 80 is obtained. Slow down the movement speed. Since the time during which the film formation surface of the film formation target 80 is exposed to vapor increases and the amount of vapor reaching the film formation surface increases, the film thickness of the thin film increases and approaches the reference value.

  Conversely, when the film thickness of the thin film formed on the film formation target 80 increases, the intensity of the transmitted X-rays detected by the X-ray detectors 20a to 20d decreases with the same magnitude. The measuring device 17 measures the film thickness of the thin film at each measurement position from the intensity of transmitted X-rays at each measurement position. When the measured thickness of the thin film exceeds the reference value and exceeds the allowable range, the control device 19 determines the film formation target from the measured thickness of the thin film, the moving speed and the moving distance of the film forming object 80. The amount of change in the moving speed of the object 80 is calculated, and the moving speed of the film forming object 80 is increased based on the calculation result. Since the time during which the film formation surface of the film formation target 80 is exposed to vapor is reduced and the amount of vapor reaching the film formation surface is reduced, the film thickness of the thin film is reduced and approaches the reference value.

In the above description, when the transmitted X-ray intensities detected by the X-ray detectors 20a to 20d are all increased or decreased by the same magnitude, the moving speed of the film formation target 80 is changed so that the film formation target 80 is changed. Although the film thickness of the thin film to be formed is brought close to the reference value, the present invention is not limited to this method, and the moving speed of the irradiation position on the thin film material 60 is changed by changing the electron beam irradiation direction as described later. By changing the thickness, the thickness of the thin film may be brought close to the reference value.
In order to increase or decrease the thickness of the thin film, a method of changing the power of the electron beam is also conceivable. However, when the power of the electron beam is changed, the intensity of the X-rays emitted from the thin film material 60 changes, and the test process. Since the correspondence relationship stored in (1) cannot be used, the power of the electron beam is not changed in the present invention, and irradiation is performed with a constant power.
In this manner, an aluminum thin film is continuously formed on the surface of the film formation target 80 with a film thickness (here, several hundred nm (film resistance is 1.6Ω)) that can be regarded as constant within an allowable range. Is done.

Furthermore, when the temperature of the thin film material 60 is locally increased in a specific irradiation region with the passage of time, for example, during the electron beam irradiation, the amount of vapor per unit time of vapor from the irradiation region increases, The film thickness of the thin film formed on the surface of the film formation target 80 increases at the measurement position facing the irradiation region.
At this time, the intensity of transmitted X-rays detected by the X-ray detector (for example, reference numeral 20a) facing the measurement position via the film formation target 80 decreases, and the other X-ray detectors (20b to 20d) The intensity of the transmitted X-ray to be detected does not change. The measuring device 17 measures the film thickness of the thin film at each measurement position from the intensity of transmitted X-rays at each measurement position. When the measured thickness of the thin film is larger than the allowable value than the reference value set in the control device 19, the control device 19 determines the thickness of the thin film at the measurement position and the moving speed of the film formation target 80. The amount of change in the irradiation direction of the electron beam is calculated from the movement distance and the moving speed of the irradiation position when passing through the irradiation region on the thin film material 60, and the irradiation direction of the electron beam is determined based on the calculation result. The moving speed when the irradiation position on the thin film material 60 passes through the irradiation region is changed. Since the time during which the irradiated region is exposed to the electron beam decreases, the amount of heating in the irradiated region decreases, and the film formation speed decreases, the film thickness of the thin film formed at the measurement position facing the irradiated region is Decrease and approach the reference value.

  Conversely, when the film thickness of the thin film deposited on the surface of the film formation target 80 is reduced at a specific measurement position, the transmission X detected by the X-ray detector facing the measurement position through the film formation target 80. The intensity of the line increases, and the intensity of transmitted X-rays detected by other X-ray detectors does not change. The measuring device 17 measures the film thickness of the thin film at each measurement position from the intensity of transmitted X-rays at each measurement position. When the measured thickness of the thin film is smaller than the allowable value than the reference value set in the control device 19, the control device 19 determines the thickness of the thin film at the measurement position and the moving speed of the film formation target 80. The amount of change in the irradiation direction of the electron beam is calculated from the movement distance and the moving speed of the irradiation position when passing through the irradiation region on the thin film material 60. It changes, and the moving speed when an irradiation position passes the said irradiation area | region of the thin film material 60 is made slow. Since the time during which the irradiated area is exposed to the electron beam increases, the heating amount of the irradiated area increases, and the film formation speed of the irradiated area increases, so the thin film formed at the measurement position facing the irradiated area The film thickness increases and approaches the reference value.

In this way, the film thickness of the thin film can be prevented from changing with respect to the width direction of the film formation target 80.
The film formation target 80 is wound around the drive shaft 71 in a roll shape.
After the film formation for one roll is completed, the emission of the electron beam from the electron gun 30 is stopped, the vacuum evacuation device 13 is stopped, and the inside of the vacuum chamber 11 is released to the atmosphere. A new roll to be formed is loaded into the film formation object holding unit 70, and the next film formation cycle is performed.

In the above description, the case where aluminum is used as the thin film material 60 has been described as an example. However, the thin film material of the present invention is not limited to this, and titanium, copper, or the like can be used as the thin film material.
In the above description, the X-ray detection apparatus 20 has a plurality of X-ray detectors 20a to 20d. However, the present invention includes a case in which one X-ray detector is provided. However, when the number of X-ray detectors is one, a change in the film thickness of the thin film cannot be detected in the width direction of the film formation target 80, so it is preferable to use a plurality of X-ray detectors.

  In the above description, all of the plurality of X-ray detectors 20a to 20d are disposed directly above a predetermined position near the end of the deposition target 80 in the moving direction of the opening of the deposition preventing plate 75. However, the position of the X-ray detectors 20a to 20d of the present invention is not limited to the above position as long as it is directly above the opening of the deposition preventing plate 75. When the X-ray detectors 20a to 20d are arranged at positions away from the end on the end side in the moving direction of the film formation target 80 in the opening of the deposition preventing plate 75, the detected transmitted X-ray intensity and Then, the film thickness of the thin film at the detection position is measured from the stored correspondence relationship, the measured film thickness of the thin film, the moving speed and moving distance of the film forming object 80, and the moving direction of the film forming object 80 The film thickness of the thin film after film formation may be obtained by calculation from the distance between the end of the film and the measurement position.

DESCRIPTION OF SYMBOLS 10 ... Vacuum evaporation apparatus 11 ... Vacuum tank 13 ... Vacuum exhaust apparatus 17 ... Measuring apparatus 18 ... Memory | storage device 19 ... Control apparatus 20a-20d ... X-ray detection apparatus 30 ... Electron gun 60 ... Thin film Material 70 ... Deposition target moving part 80 ... Deposition target

Claims (12)

A vacuum chamber;
An evacuation device for evacuating the vacuum chamber;
An electron gun configured to emit an electron beam into the vacuum chamber;
Have
The thin film material disposed in the vacuum chamber is irradiated with an electron beam from the electron gun to release vapor from the thin film material, and the thin film is applied to the surface of the film formation target disposed at the position where the vapor is incident. A vacuum evaporation apparatus for forming a film,
Intensity of transmitted X-rays disposed on the opposite side of the thin film material as viewed from the film formation target, emitted from the thin film material irradiated with the electron beam, and sequentially transmitted through the thin film and the film formation target An X-ray detection device for detecting
A storage device in which the correspondence between the intensity of the transmitted X-rays and the film thickness of the thin film is stored in advance;
A measuring device for measuring the film thickness of the thin film from the intensity of the transmitted X-ray detected by the X-ray detection device and the correspondence stored in the storage device;
A vacuum deposition apparatus having:   The vacuum deposition apparatus according to claim 1, further comprising a film formation object moving unit that moves the film formation object relative to the thin film material while forming a thin film on the surface of the film formation object.   The film thickness of the thin film measured by the measuring device is compared with a reference value, and from the comparison result, the film thickness of the thin film formed on the surface of the film formation target is increased or decreased, and the surface of the film formation target is The vacuum evaporation apparatus of any one of Claim 1 or 2 which has a control apparatus comprised so that the film thickness of the said thin film formed may approximate the said reference value.   The control device controls the film formation object moving unit to change the moving speed of the film formation object so as to increase or decrease the film thickness of the thin film formed on the surface of the film formation object. The vacuum evaporation apparatus according to claim 3, which is configured. The vacuum deposition apparatus according to claim 3, wherein the electron gun is configured to change an irradiation direction of the electron beam and move an irradiation position of the electron beam on a surface of the thin film material,
The said control apparatus is a vacuum evaporation apparatus comprised so that the movement speed of the said irradiation position may be changed and the film thickness of the said thin film formed in the said film-forming target object may be increased / decreased. The film thickness of the thin film measured by the measuring device is compared with a reference value, and from the comparison result, the film thickness of the thin film formed on the surface of the film formation target is increased or decreased, and the surface of the film formation target is A control device configured to bring the thickness of the thin film to be formed closer to a predetermined value;
The electron gun is configured to change an irradiation direction of the electron beam and move an irradiation position on the surface of the thin film material of the electron beam,
The measuring apparatus is configured to measure film thicknesses at a plurality of measurement positions in a direction perpendicular to a traveling direction of the film formation target on the film formation target;
The control device compares the measured value of the film thickness at each of the measurement positions with the reference value, and determines the movement speed of the irradiation position at a location facing each of the measurement positions on the thin film material. The vacuum deposition apparatus according to claim 2, which is configured to change every time. The vacuum deposition apparatus according to any one of claims 2 to 6, wherein the film formation target is a belt-like film.
The film deposition target moving unit is a vacuum deposition apparatus configured to wind up the film on the end point side from the position where the vapor is incident with respect to the moving direction of the film formation target. When the thin film material is irradiated with an electron beam in an evacuated vacuum chamber, the vapor is released from the thin film material, and the thin film is formed on the surface of the film formation target disposed at the position where the vapor is incident And a film thickness measuring method for measuring the film thickness of the thin film,
Before forming a thin film on the surface of the film formation target, the intensity of transmitted X-rays emitted from the thin film material and sequentially transmitted through the thin film and the film formation target, and the film thickness of the thin film Remember the correspondence,
When forming a thin film on the surface of the film formation target, the intensity of the transmitted X-ray is detected, and the film thickness of the thin film is determined from the detected intensity of the transmitted X-ray and the stored correspondence relationship. Film thickness measurement method to be measured. The thin film material is irradiated with an electron beam in an evacuated vacuum chamber, vapor is released from the thin film material, and the film formation target is moved and moved relative to the thin film material. A vacuum deposition method for forming a thin film on a surface,
Before forming a thin film on the surface of the film formation target, determine a reference value for the thickness of the thin film,
When forming a thin film on the surface of the film formation target, the film thickness of the thin film is measured by the film thickness measurement method according to claim 8, and the measured film thickness of the thin film is compared with the reference value. The vacuum deposition method of increasing or decreasing the film thickness of the thin film formed on the surface of the film formation object from the comparison result to bring the film thickness of the thin film formed on the surface of the film formation object close to the reference value.   After comparing the measured film thickness of the thin film with the reference value, from the comparison result, the moving speed of the film formation target is changed to determine the film thickness of the thin film formed on the surface of the film formation target. The vacuum deposition method according to claim 9, wherein the number is increased or decreased. The vacuum deposition method according to claim 9, wherein when irradiating the electron beam to the thin film material, the irradiation direction of the electron beam is changed, and the irradiation position on the surface of the thin film material of the electron beam is moved.
After comparing the measured thickness of the thin film with the reference value, from the comparison result, the moving speed of the irradiation position is changed to increase or decrease the thickness of the thin film formed on the surface of the film formation target. Vacuum deposition method. When irradiating the thin film material with the electron beam in an evacuated vacuum chamber, the electron beam irradiation direction is changed, the irradiation position of the electron beam on the thin film material surface is moved, and the thin film material is vaporized. A vacuum vapor deposition method for forming a thin film on the surface of the film formation target while moving the film formation target with respect to the thin film material.
Before forming a thin film on the surface of the film formation target, determine a reference value for the thickness of the thin film,
9. The film thicknesses at a plurality of measurement positions in a direction perpendicular to the traveling direction of the film forming object on the film forming object when forming a thin film on the surface of the film forming object. The film thickness measurement method is used to measure the film thickness measurement value at each measurement position with the reference value. From the comparison result, the irradiation at the location facing each measurement position on the thin film material The position moving speed is changed for each irradiation position to increase or decrease the film thickness of the thin film formed on the film formation target, and the film thickness of the thin film formed on the film formation target surface is the reference. Vacuum deposition method that approaches the value.

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