JP2012072420A - Vapor-deposited flux measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure the vapor-deposited flux in the x-direction orthogonal to the y-direction by the atomic absorption method without polluting a light source or a light receiving device with a film deposition material when executing the film deposition by vapor deposition while conveying a substrate in the y-direction.SOLUTION: Measuring light is made to pass in the x-direction orthogonal to the y-direction. The passing position of the measuring light in the x-direction with respect to the vapor-deposited flux not shielded by a shielding plate is changed by relatively moving the optical path of the measuring light to the shielding plate by using the shielding plate to shield the vapor-deposited flux arranged on the evaporation source side from the optical path of the measuring light.

Description

  The present invention relates to an apparatus for measuring a deposition flux that is used to control a film formation rate or the like in film formation by vacuum vapor deposition.

  In film formation by vacuum evaporation or the like, the vapor deposition flux (deposition material vapor (evaporation particles of the film formation material) from the evaporation source to the substrate to be formed is measured by atomic absorption method to determine the film formation rate and the like. It is known to control.

For example, as disclosed in Patent Document 1, a method for measuring the vapor deposition flux (hereinafter referred to as a flux) includes a light source such as a holocathode lamp that emits measurement light having a wavelength corresponding to a film forming material for measuring the flux. Using a light receiver that measures the amount of measurement light, the measurement light emitted from the light source is passed through the flux in the vicinity of the substrate, and the measurement light that has passed through the flux is measured by the light receiver.
The amount of the measurement light that has passed through the flux is absorbed and reduced in accordance with the amount of the measurement component (measuring particle) in the flux. Therefore, by measuring the amount of measurement light that has passed through the flux, the amount of film-forming material that flies toward the substrate can be measured. For example, the heating in the evaporation source can be controlled accordingly. Thus, the film formation rate can be managed.

  In such flux measurement, when the flux distribution is measured in a plane parallel to the substrate surface, it is necessary to measure the flux at a plurality of points in a predetermined direction. For example, when measuring the flux distribution in the x direction on the xy plane, it is necessary to perform measurement that passes the flux in the y direction at a plurality of points in the x direction.

If film formation is performed on a fixed substrate (substrate held at a predetermined position) as shown in Patent Document 1, the flux distribution can be measured in both the x and y directions by this measurement method. it can.
However, this measurement is required when film formation is performed while transporting a substrate in a specified direction, such as when performing film formation by roll-to-roll (Roll to Roll) while transporting a long substrate. It is difficult to measure the flux distribution in the direction orthogonal to the conveying direction by this method. In particular, when a plurality of stages of film formation are performed in a plurality of film formation chambers arranged in the substrate transport direction, it is difficult to measure the flux distribution in the direction orthogonal to the transport direction by this measurement method.

JP 2001-108615 A

  As is well known, roll-to-roll film formation uses a supply roll formed by winding a long substrate (web-like substrate) into a roll, and transports the substrate fed from the supply roll to the film formation chamber. Then, the film is formed while being conveyed in the longitudinal direction in the film formation chamber, and the long substrate on which the film has been formed is again wound into a roll shape.

Here, when measuring the flux distribution in the width direction (x direction) of the substrate, it is necessary to perform the measurement of passing the flux in the substrate transport direction (y direction) at a plurality of points in the width direction. However, in film formation by roll-to-roll, the film formation chamber often becomes longer in the transport direction. In this case, in order to measure the flux distribution in the width direction, it is necessary to arrange a light source such as a holocathode lamp or a light receiver in the film forming chamber.
However, if a light source or a light receiver is disposed in the film forming chamber, naturally, the light source or the like is contaminated by the flux (film forming material vapor), so that accurate measurement gradually becomes impossible.

If the length of the film forming chamber in the transport direction is short, a light source and a light receiver can be arranged outside the film forming chamber so as to face the transport direction. However, even in this case, when a plurality of film formation chambers are arranged in the substrate transfer direction and a plurality of stages of film formation are performed, the result is that a light source or the like is arranged in the adjacent film formation chamber. Accurate measurement cannot be performed.
Such a problem is not limited to film formation by roll-to-roll, but also when film formation is performed while transporting a sheet-like substrate.

  An object of the present invention is to solve the above-mentioned problems of the prior art, and a light source such as a holocathode lamp and a light receiver are formed when film formation is performed in vacuum deposition using roll-to-roll. Vapor deposition flux measuring device that can be disposed outside the film chamber and can measure the distribution of the vapor deposition flux in the direction (x direction) perpendicular to the substrate transport direction (y direction) by measuring the vapor deposition flux using atomic absorption method. Is to provide.

  In order to achieve the above object, the vapor deposition flux measuring apparatus according to the present invention uses the vapor deposition flux in the x direction orthogonal to the y direction when the substrate is transported in the y direction and the film is deposited on the substrate by vapor deposition. A vapor deposition flux measuring apparatus for measuring, wherein a measurement light for measuring the vapor deposition flux is disposed so as to pass through a predetermined vapor deposition flux measurement region in the x direction, And a light receiver that measures the amount of measurement light that has passed through the measurement region of the vapor deposition flux, and a shielding plate that is disposed below the optical path of the measurement light that passes through the measurement region of the vapor deposition flux. And by relatively moving the optical path of the measurement light and the shielding plate, the measurement light with respect to the vapor deposition flux that is not shielded by the shielding plate. Providing a deposition flux measuring apparatus characterized by having a moving means for changing the direction of the passing position.

In such a vapor deposition flux measuring apparatus of the present invention, it is preferable that the shielding plate has an end portion extending in the x direction and inclined with respect to the x direction.
In this case, it is preferable that the moving means moves the optical path of the measurement light in at least one direction opposite to the y direction and the y direction so as to pass through the upper part of the inclined end portion of the shielding plate. Further, the moving means moves the shielding plate in at least one direction that is opposite to the y direction and the y direction so that the inclined end portion of the shielding plate passes through the lower part of the optical path of the measurement light. Is preferred.

  Further, the moving means changes the angle of the optical path of the measurement light with respect to the x direction about a predetermined center point, and changes the intersection of the end of the shielding plate and the optical path of the measurement light in the x direction. As described above, it is preferable to move the light source and the light receiver, and in this case, it is preferable that a mask for restricting the film forming region in the y direction also serves as the shielding plate.

  In addition, it is preferable that the shielding plate is a plate-like object disposed below the optical path of the measurement light, and the moving unit moves the plate-like object along the optical path of the measurement light. .

In addition, it is preferable that the film formation on the substrate is performed while vapor deposition is performed while a long substrate is conveyed with the longitudinal direction and the y direction aligned with each other, and the light source and the light receiver are formed in the film formation chamber. It is preferable to be arranged outside the x direction.
Furthermore, it is preferable to have two combinations of the light source, the light receiver, and the shielding plate spaced apart in the y direction. In this case, the optical path of the measurement light from one light source is switched by a mirror. Preferably, the measurement light is incident on a light receiver disposed upstream and downstream in the y direction.

According to the present invention, when film formation is performed while the substrate is transported in the y direction, a shield plate for measuring vapor deposition flux is used, and the shield plate and the optical path of the measurement light are moved relatively. By changing the passing position of the measurement light with respect to the vapor deposition flux in the x direction (direction perpendicular to the y direction), the vapor deposition flux distribution in the x direction can be measured.
Therefore, according to the vapor deposition flux measuring apparatus of the present invention, the film distribution can be controlled by properly grasping the flux distribution in the x direction in a roll-to-roll film forming apparatus or the like. Can be performed stably. Further, since the light source and the light receiver can be disposed outside the film formation chamber, contamination of the light source and the like due to the film formation material can be prevented.

It is a figure which shows notionally the film-forming apparatus using an example of the vapor deposition flux measuring apparatus of this invention. It is a figure which shows notionally an example of the vapor deposition flux measuring apparatus of this invention, (A) is a top view, (B) is a front view, (C) is a top view of a modification. It is a conceptual diagram for demonstrating the effect | action of the vapor deposition flux measuring apparatus shown in FIG. (A) And (B) is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention. It is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention. (A) And (B) is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention. It is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention. It is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention.

  Hereinafter, the vapor deposition flux measuring apparatus of the present invention will be described in detail based on the preferred examples shown in the accompanying drawings.

In FIG. 1, an example of the film-forming apparatus using an example of the vapor deposition flux measuring apparatus of this invention is shown notionally.
A film forming apparatus 10 shown in FIG. 1 sends out a substrate from a substrate roll 12 formed by winding a long substrate Z (web-shaped substrate Z) in a roll shape, and forms the film by vacuum deposition while conveying the substrate in the longitudinal direction. The film forming apparatus is a so-called roll-to-roll process in which the film-formed substrate Z is again wound around the winding shaft 14 to form a roll.
In the illustrated example, the film forming apparatus 10 includes three film forming chambers formed in a vacuum chamber 16, which are a supply chamber 18, a first film forming chamber 20a, a second film forming chamber 20b, and a third film forming chamber 20c. A film forming zone 20 having a winding chamber 24 and a winding chamber 24.

The supply chamber 18 is a chamber for delivering the substrate Z from the substrate roll 12 and transporting it to the film formation zone 20 (first film formation chamber 20a). The supply chamber 18 is provided with a rotary shaft 26, guide rollers 28a to 28c, vacuum evacuation means 30, and the like. It is comprised.
The substrate roll 12 is loaded on the rotating shaft 26. The rotating shaft 26 loaded with the substrate roll 12 rotates clockwise to send out the substrate Z wound around the substrate roll 12 in the longitudinal direction (y direction in the figure).
The guide rollers 28a to 28c are known guide rollers, and may be drive rollers or driven rollers. In this regard, the same applies to each guide roller described later.

The vacuum exhaust means 30 is for reducing the pressure in the supply chamber 18 to a predetermined pressure (degree of vacuum).
The vacuum exhaust means 30 is not particularly limited, and includes a vacuum pump such as a turbo pump, a mechanical booster pump, a rotary pump, and a dry pump, an auxiliary means such as a cryocoil, and a means for adjusting the ultimate vacuum and the exhaust amount. Various known (vacuum) evacuation means used in the vacuum film forming apparatus can be used. In this regard, the same applies to the vacuum exhaust means 42 and 56 described later.

  The substrate Z sent out from the substrate roll 12 is conveyed in the y direction (longitudinal direction) and guided by the guide rolls 28a to 28c to separate the supply chamber 18 and the film formation zone 20 (first film formation chamber 20a). Then, the film is transported to the film formation zone 20 from the carry-in port 34 a formed in the partition wall 34.

The film formation zone 20 is for performing film formation on the surface of the substrate Z by vacuum vapor deposition, and is arranged in the transport direction of the substrate Z to form the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation. The chamber 20c has three film forming chambers.
The first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c basically have the same configuration, and include an evaporation source 36, a guide roller 38, masks 40a and 40b, Vacuum evacuation means 42. Only the most downstream third film formation chamber 20c has a guide roller 46 at the most downstream position.
Further, the film forming chambers are separated from each other by a partition wall 48 having a carry-in port 48a for the substrate Z.

Further, the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c are provided with the vapor deposition flux measuring device 70 of the present invention for measuring the vapor deposition flux by vacuum vapor deposition by the atomic absorption method. Yes.
In FIG. 1, only the shielding plate 76 constituting the vapor deposition flux measuring device 70 is shown in order to clearly show the configuration of each film forming chamber. The vapor deposition flux measuring device will be described in detail later.

The first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c are for performing film formation on the surface of the substrate Z transported in the y direction by vacuum deposition.
In the illustrated example, each film forming chamber is a film forming chamber capable of performing multi-source simultaneous vapor deposition, and four evaporation sources (vapor deposition sources) 36 are arranged in the transport direction of the substrate Z.
The evaporation source 36 is a known evaporation source (deposition source / crucible) used for vacuum evaporation. The evaporation source 36 may be heated by various known methods used in vacuum deposition, such as resistance heating, electron beam heating, induction heating, and the like.
Further, although not shown in the drawings, various members of a known vacuum vapor deposition apparatus such as a shutter for closing the vapor deposition source and a temperature adjusting means for the substrate Z are arranged in each film forming chamber as necessary. .

Here, as an example, the evaporation source 36 is a long rectangle extending in the x direction (width direction of the substrate Z) orthogonal to the y direction, which is the transport direction of the substrate Z (longitudinal direction of the substrate Z), Each region divided in the x direction is configured to be able to control heating.
The heating of the evaporation source 36 is controlled in accordance with, for example, the measurement result of the vapor deposition flux by the vapor deposition flux measuring device 70 described later.

The masks 40a and 40b are well-known masks that regulate a film formation region in the transport direction (y direction) of the substrate Z.
In the illustrated example, the mask 40a regulates the film forming region on the upstream side in the transport direction of the substrate Z, and the mask 40b regulates the film forming region on the downstream side. Both masks have a size covering almost the entire region in the film forming chamber in the direction (x direction) perpendicular to the transport direction.
A shielding plate 76 constituting the vapor deposition flux measuring device 70 of the present invention is fixed to the upstream mask 40a. The shielding plate 76 will be described in detail later.

  The vacuum exhaust means 42 is a vacuum exhaust means for exhausting the film forming chamber to a pressure corresponding to vacuum deposition to be performed.

In the illustrated film forming apparatus 10, in the film forming zone 20, the same film may be formed in each film forming chamber of the first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber 20c. It can be different. In the film formation zone 20, the film formation may be performed using all three film formation chambers, or the film formation may be performed using only one or two chambers.
Furthermore, it is not always necessary to use all the evaporation sources 36 in each film forming chamber.

For example, when forming a CIGS film in the film formation zone 20 (film formation apparatus 10) by the three-stage method of multi-source co-evaporation, in the first film formation chamber 20a, each of the three evaporation sources 36 is supplied with In. , Ga, and Se, in the second film formation chamber 20b, the two evaporation sources 36 are filled with Cu and Se, respectively, and in the third film formation chamber 20c, the three evaporation sources 36 are Each is filled with In, Ga, and Se.
Then, while transporting the substrate Z, indium, gallium, and selenium are co-evaporated in the first film formation chamber 20, and then copper and selenium are co-evaporated in the second film formation chamber 20b. 3. CIGS is deposited on the substrate Z by co-evaporating indium, gallium, and selenium in the third deposition chamber 20c.

  The substrate Z transferred from the supply chamber 18 to the first film formation chamber 20a is sequentially transferred to the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c, and one or more formation layers are transferred. The film chamber is formed by vacuum deposition in the film chamber, and is guided by the guide roller 46 to be carried in by the partition wall 50 separating the film formation zone 20 (third film formation chamber 20c) and the winding chamber 24. Then, it is conveyed to the winding chamber 24.

In the winding chamber 24, the substrate Z formed in the film forming zone 20 is wound around the winding shaft 14 to be rolled again.
In the illustrated example, the winding chamber 24 includes the above-described winding shaft 14, four guide rollers 54 a to 54 d, and a vacuum exhaust unit 56 that exhausts the winding chamber 24 to a predetermined pressure.
The film-formed substrate Z transported to the winding chamber 24 is sequentially guided to the guide rollers 54a to 54d, transported along a predetermined transport path, wound around the winding shaft 14, and again in a roll shape. To be.

As described above, in the illustrated film forming apparatus 10, the deposition flux measurement of the present invention is performed in the first film forming chamber 20 a, the second film forming chamber 20 b, and the third film forming chamber 20 c in the film forming zone 20. The device is in place.
FIG. 2 conceptually shows an example thereof. 2A is a top view and FIG. 2B is a front view. 2B is a view seen from the same direction as FIG.

A vapor deposition flux measuring apparatus 70 (hereinafter referred to as a measuring apparatus 70) shown in FIG. 2 is a vapor deposition flux (vapor of film forming material (vaporized particles of film forming material) by vacuum evaporation in each film forming chamber by atomic absorption method. And includes a light source 72, a light receiver 74, a shielding plate 76, and a moving means (not shown) for moving the light source 72 and the light receiver 74.
The measuring apparatus 70 of the present invention has a vapor flux F (in FIG. 2) at a plurality of positions in the x direction (width direction of the substrate Z) orthogonal to the y direction, which is the transport direction of the substrate Z (longitudinal direction of the substrate Z). It is a device that can measure the flux distribution in the x direction.
In FIG. 2, in order to simplify the drawing and clarify the configuration of the measuring apparatus 70 of the present invention, the guide roller 38 is omitted, and the evaporation source 36 is one (not shown in FIG. 2A). ). Similarly, in FIG. 2A, the mask 40a located above the shielding plate 76 is indicated by a broken line, and the substrate Z is indicated by a two-dot chain line.

The light source 72 irradiates the measurement light L for measuring the vapor deposition flux (hereinafter also referred to as flux) F by the atomic absorption method.
In the measuring apparatus 70 of the present invention, the flux measuring method itself is basically a known vapor deposition flux measuring method using an atomic absorption method. Therefore, the light source 72 is a well-known method used for flux measurement by an atomic absorption method such as a holocathode lamp that irradiates light having a wavelength absorbed by the flux F according to the flux F (film forming material atoms) to be measured. A light source may be used.

For example, in the above-described CIGS film formation by multi-source co-evaporation, a copper holocathode lamp is used to measure copper flux, an indium holocathode lamp is used to measure indium flux, and a gallium flux. In the measurement, a gallium holocathode lamp may be used as the light source 72, respectively.
Further, when measuring the flux F of a plurality of film forming materials (atoms), a light source corresponding to each film forming material is placed on a rotatable turret or the like to correspond to the film forming material to be measured. A light source may be used. Alternatively, the flux of the target film forming material may be measured by analyzing the wavelength using a light source that emits light having a normal continuous wavelength.

As the light receiver 74, all light receivers that can measure the light amount (luminance / light intensity) of the measurement light L and are used for flux measurement by a known atomic absorption method can be used.
In the measuring apparatus 70, the flux amount is detected by, for example, detecting the relationship between the amount of the measurement light L received by the light receiver 74 and the amount of the flux F in advance by experimentation or simulation, and creating a table. It is sufficient to use a known method that is used in a method for measuring a vapor deposition flux using an atomic absorption method, such as a method for preparing a film.

The light source 72 and the light receiver 74 are arranged so that the optical path of the measurement light L from the light source 72 to the light receiver 74 coincides with the x direction.
Further, the light source 72 and the light receiver 74 are disposed outside the vacuum chamber 16. That is, the light source 72 and the light receiver 74 are arranged outside the x-direction chamber wall 16a that forms the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c (in FIG. 2B) It is arranged outside (perpendicular to the paper surface).
A window portion 78 made of a material that can transmit the measurement light L, such as quartz glass, is formed at the passage position of the measurement light L on the chamber wall 16a in the x direction of each film forming chamber.

In the measurement apparatus 70 in the illustrated example, the light source 72 and the light receiver 74 are provided with an optical path for the x direction and the measurement light L in order to measure the flux distribution in the x direction orthogonal to the y direction (the transport direction of the substrate Z). Are moved in the a direction which coincides with the y direction (or the reverse direction) which is the transport direction of the substrate Z.
Accordingly, the window 76 has a sufficient length in the a direction according to the amount of movement of the light source 72 and the light receiver 74.

As described above, in the flux measurement method described in Patent Document 1 or the like, in order to measure the flux distribution in the x direction, a light source and a light receiver are arranged so as to irradiate measurement light in the y direction, and x It is necessary to measure the flux at multiple points in the direction.
On the other hand, in the present invention, as will be described in detail later, the flux distribution in the x direction can be measured by irradiating the measurement light L in the x direction. Therefore, as in the film forming apparatus 10 shown in FIG. 1, even an apparatus in which a long substrate Z is transported in the longitudinal direction and a plurality of film forming chambers are arranged can be easily formed. The light source 72 and the light receiver 74 can be disposed outside the film chamber (film formation space), and contamination of the light source 72 and the light receiver 74 with the film forming material vapor can be prevented.

As described above, in the measurement apparatus 70 in the illustrated example, in order to measure the flux distribution in the x direction, the light source 72 and the light receiver 74 are arranged on the substrate Z in a state where the x direction and the optical path of the measurement light L coincide with each other. It moves in the a direction that coincides with the y direction (or the reverse direction) that is the transport direction. That is, in the measuring device 70, the measuring light L moves in the a direction along the optical path with the optical path coinciding with the x direction. This will be described in detail later.
The moving method of the light source 72 and the light receiver 74 is not particularly limited, and all known moving methods such as a rack and pinion, screw transmission, and a moving method using a pulley and a belt can be used.

A shielding plate 76 is disposed below the mask 40a on the upstream side among the masks 40a and 40b that regulate the film forming region in the transport direction of the substrate Z in the y direction.
As shown in FIG. 2B, the light source 72 and the light receiver 74 are arranged so that the measurement light L for measuring the flux F passes between the shielding plate 76 and the mask 40a. Here, since the measurement of the flux F is preferably performed as close to the substrate Z as possible, the interval between the shielding plate 76 and the mask 40a is an interval through which the measurement light L can sufficiently pass and is as close as possible. Is preferably set.

The shielding plate 76 is a plate-like object extending in the x direction having the same length as the mask 40a in the x direction (the width direction of the substrate Z), and an end portion (end side) 76a on the downstream side in the y direction is It has a shape inclined with respect to the x direction.
In the measurement apparatus 70 of the illustrated example, such a shielding plate 76 having an end portion 76a extending in the x direction and inclined with respect to the x direction is used, and the optical path (light source 72) of the measurement light L is used. And by moving the light receiver 74) in the a direction so as to pass over the end portion 76a, it is possible to measure the flux F at a plurality of points in the x direction and measure the flux distribution in the x direction. ing.

As described above, the optical path of the measurement light L is set between the shielding plate 76 and the mask 40a.
Here, in the measuring apparatus 70 having the shielding plate 76 that extends in the direction of the arrow x and has an end portion 76a that is inclined with respect to the direction of the arrow x, the measurement light L traveling in the x direction is located in the a direction. The optical path length of the measurement light L that passes through a place where there is no shielding plate 76 differs depending

For example, as conceptually shown in FIG. 3, when the optical path of the measurement light L (hereinafter also simply referred to as “measurement light L”) is at a position p <b> 1 where the shielding plate 76 does not exist in the y direction, the measurement light L L passes through the place where there is no shielding plate 76 from the beginning to the end for the length d1, and reaches the light receiver 74.
On the other hand, when the measurement light L passes through the position p2 where the shielding plate 76 exists in the y direction, the measurement light L is shielded after passing through a place where the shielding plate 76 is not provided for a length d2 shorter than d1. It passes over the plate 76 and reaches the light receiver 74.
Further, when the measurement light L passes through the position p3 on the left in the drawing, the measurement light L passes over the shielding plate 76 after passing through a place where there is no shielding plate 76 for a length d3 shorter than d2. Then, the light receiver 74 is reached.

Here, as described above, the optical path of the measurement light L is set on the shielding plate 76 (and below the mask 40a). Accordingly, the flux F is naturally not shielded at the position where the shielding plate 76 is not present, and thus rises to the optical path of the measuring light L.
Therefore, when the measurement light L passes through the position p1, the measurement light L passes through the flux F at a distance d1 across the entire deposition chamber. On the other hand, when the measurement light L is p2, the distance that the measurement light L passes through the flux F is shortened to d2. Furthermore, when the optical path of the measurement light L is p3, the distance that the measurement light L passes through the flux F is further shortened to d3.
That is, in the measuring device 70, the length of the measurement light L passing through the flux F in the x direction varies depending on the position of the measurement light L in the a direction.

Therefore, the measurement light L (that is, the light source 72 and the light receiver 74) is moved continuously (or intermittently) in the direction a, the amount of the measurement light L is measured, and the flux amount is detected. By differentiating the result, the amount of flux at a plurality of points in the x direction is detected using the intersection of the measurement light L and the shielding plate 76 in the x direction as a measurement point, and the flux in the x direction perpendicular to the transport direction of the substrate Z is detected. Distribution can be measured.
Alternatively, for example, by taking the difference in the flux amount at each measurement position, similarly, the amount of flux in the x direction between the measurement points with the intersection of the measurement light L and the shielding plate 76 in the x direction as the measurement point. And the flux distribution in the x direction may be measured.

That is, the vapor deposition flux measuring apparatus of the present invention allows the measurement light L to pass in the x direction perpendicular to the y direction with respect to the flux F when the substrate is transported in the predetermined y direction to perform film formation, and the flux By using a shielding plate for flux measurement that shields F, and further moving the shielding plate and the measurement light L relative to each other, the passing position of the measurement light in the x direction with respect to the flux F is changed. The flux F is measured at a plurality of points in the direction, and the flux distribution in the x direction can be measured.
In addition, since the measurement light L is passed in the x direction with respect to the flux F, measurement is performed even when a plurality of film forming chambers are arranged and a plurality of stages of film forming are performed as in the film forming apparatus 10 shown in FIG. The light source and the light receiver of the light L can be disposed outside the film forming chamber, and the measurement error of the flux F caused by contamination of the light source and the light receiver with the film forming material can be eliminated.

In the measuring apparatus 70, the means for moving the measuring light L in the direction a is not limited to the method of moving the light source 72 and the light receiver 74 as shown in the illustrated example, and various kinds of means used in various optical apparatuses. These methods are available.
For example, as shown in FIG. 2C, the light source 72 and the light receiver 74 are fixed using an optical system that matches the measurement light L with the x direction using two mirrors 80, and the mirror 80 is moved in the a direction. , The optical path of the measurement light L may be moved in the a direction in a state where it coincides with the x direction.
The flux distribution may be measured by moving the measurement light L in any direction of the a direction, or may be performed by moving in both directions of the a direction.

The measuring apparatus 70 in the illustrated example moves the shielding plate 76 and the measuring light L relatively by moving the measuring light L in the direction a, but the present invention is not limited to this.
For example, as shown conceptually in FIG. 4A, the same shield plate 76 is used, the measurement light L (the light source 72 and the light receiver 74) is fixed, and the shield plate 76 is moved in the direction a. Thus, the shielding plate 76 and the measurement light L may be moved relative to each other. Alternatively, both the shielding plate 76 and the measurement light L may be moved in the a direction.

Further, the measuring device 70 is not limited to the configuration using the shielding plate 76 having the end portion 76a inclined in one direction with respect to the x direction. For example, like the shielding plate 84 shown in FIG. In addition, a shape having a mountain-shaped end portion 84a that inclines in the opposite direction with the center in the x direction as a vertex, and has an end portion (end side) that extends in the x direction and is inclined with respect to the x direction Then, various shapes of shielding plates can be used.
Furthermore, the optical path of the measurement light L is not limited to a configuration that coincides with the x direction. If the optical path passes through the flux F to be measured in the x direction, an angle with respect to the x direction is obtained. The optical path of the measurement light L may be set.

  The vapor deposition flux measuring apparatus of the present invention is not limited to the configuration using the shielding plate 76 extending in the x direction and inclined with respect to the x direction, and various shielding plates can be used.

  As an example, as conceptually shown in FIG. 5, a shielding plate 86 having an end portion 86a extending in alignment with the x direction is used, and the light source 72 is connected to the measurement light L in the y direction or in the reverse direction (in the drawing). It is also possible to use a configuration in which the light receiver 74 rotates (rotates in the b direction) and the light receiver 74 moves (rotates) in synchronization with the rotation of the measurement light L. In this configuration as well, it is natural that the measurement light L passes between the shielding plate 86 and the mask 40a.

As shown in FIG. 5, according to this configuration, when the measurement light L rotates around the light source 72, the angle between the x direction and the measurement light L gradually changes, thereby the shielding plate 86. The intersection of the end of the light and the measuring light L moves in the x direction. Therefore, the length that the measurement light L passes through the flux not shielded by the shielding plate 86 can be changed in the x direction by changing the angle of the measurement light L with respect to the x direction and moving the intersection with the shielding plate 86. .
Accordingly, even in this configuration, the flux F can be measured at a plurality of points in the x direction and the distribution in the x direction can be measured in the same manner as the measurement device 70 described above.

In the vapor deposition flux measuring apparatus having the configuration shown in FIG. 5, a shielding plate having an end that coincides with the x direction can be used. Therefore, when there is a gap through which the measurement light L can pass between the substrate Z and the mask 40a, an optical path of the measurement light L is set on the mask 40a, and the mask 40a is used as a shielding plate. Good.
In the configuration shown in FIG. 5, the measurement light L may be rotated using a mirror or the like other than the configuration in which the light source 72 is rotated.
Furthermore, also in the structure which rotates this measurement light L, you may utilize the shielding board which has an edge part inclined with respect to the x direction shown in FIG.

In the vapor deposition flux measuring apparatus of the present invention, the passage position of the measurement light L in the x direction may be changed with respect to the flux F that is not shielded by the shielding plate by using a shielding plate that moves in the x direction.
FIG. 6A shows an example of the shielding plate.
The example shown in FIG. 6A is a configuration in which a shielding plate 90 movable in the x direction is provided under the mask 40a, and an optical path of the measuring light L is provided between the shielding plate 90 and the mask 40a. . In this configuration, the position of the flux F not shielded by the shielding plate 90 in the x direction changes according to the position of the shielding plate 90 in the x direction.
Therefore, by moving the shielding plate 90 in the x direction, the passage position of the measurement light L in the x direction is changed with respect to the flux F not shielded by the shielding plate 90, and flux measurement is performed at a plurality of points in the x direction. It is possible to detect the flux distribution in the x direction.

  In the configuration shown in FIG. 6A, the moving method of the shielding plate 90 is not particularly limited, and all known plate-like moving methods can be used.

Further, as another configuration for moving the shielding plate in the x direction, a configuration using an endless belt as shown in FIG. 6B can be used.
The endless belt 92 is formed of a material that can transmit the measurement light L, and is stretched between two rollers 94 at a lower portion of the mask 40a (not shown) and is arranged in the x direction by a known method. It is rotated. Here, a convex portion 92 a that acts as a shielding plate is formed at the end of the endless belt 92 on the downstream side in the y direction (evaporation source side). Further, the measurement light L passes above the convex portion 92a (that is, as a result, between the convex portions 92a).
Accordingly, also in this configuration, the position of the convex portion 92a is moved in the x direction by the rotation of the endless belt 92, and the position of the unshielded flux F in the x direction is changed according to the position of the convex portion 92a. For the flux F not shielded by the convex portion 92a (shielding plate), the passage position of the measurement light L in the x direction is changed, the flux is measured at a plurality of points in the x direction, and the flux distribution in the x direction is detected. be able to.

  The size x1 and the interval x2 in the x direction of the protrusion 92a are not particularly limited, but according to the calculation by the present inventors, both the size x1 and the interval x2 are relative to the effective width of the vapor deposition region in the x direction. It is preferable to set it to about 1/2.

As shown in FIGS. 6A and 6B, in the configuration in which the shielding plate is moved in the x direction, a fixed shielding plate may be provided in addition to the vapor deposition region, if necessary.
Further, as shown in FIGS. 6A and 6B, in the configuration in which the shielding plate is moved in the x direction, the moving direction of the shielding plate, that is, the optical axis of the measurement light L does not necessarily coincide with the x direction. It is not necessary that the optical path of the measurement light L coincides with the moving direction of the shielding plate. However, it is preferable that the moving direction of the measuring light L and the shielding plate coincide with the x direction in that the flux distribution in the x direction can be appropriately measured.

In the above example, the flux F is shielded by the y-direction evaporation source 36 side of the shielding plate, and the passing position of the measurement light L in the x direction with respect to the flux F not shielded by the shielding plate is changed. The invention is not limited to this.
That is, as conceptually shown in FIG. 7, the flux F is applied by the opposite side of the evaporation source 36 of the shielding plate that shields the flux F (flux shielding mechanism FIG. 7 is exemplified by the shielding plate 76 shown in FIG. 2). The passing position of the measurement light L in the x direction with respect to the flux F not shielded by the shielding plate may be changed.

In the above example, a shielding plate is disposed under the mask 40a disposed on the upstream side in the y direction (the transport direction of the substrate Z), and flux measurement is performed on the upstream side of the film forming region in the y direction. However, the present invention is not limited to this.
That is, a shielding plate is arranged under the mask 40b on the downstream side in the y direction, and the measurement light L is placed between the shielding plate and the mask 40b (or on the mask 40b if the configuration shown in FIG. 5). An optical path may be set, and flux measurement may be performed on the downstream side of the film formation region in the y direction. Alternatively, flux measurement may be performed both in the upstream and downstream of the y direction.

Here, when the flux measurement is performed in both the upstream and downstream in the y direction, the light source 72 is not limited to be provided corresponding to both the upstream and downstream measurement positions.
For example, as schematically shown in FIG. 8 (as an example, illustrated by the shielding plate 84 in FIG. 4B), a single light source 72 is provided, and a mirror 98 is disposed at a position facing the light receiver 74. A mirror 100 that swings as shown by an arrow c in the figure is provided between the mirrors 98, and the mirror 100 is swung to distribute the measurement light L to the upstream and downstream measuring devices, You may make it perform a flux measurement in both the upstream and downstream of ay direction.

In the measuring apparatus of the present invention, the flux F to be measured is not particularly limited, and all the flux F that can be measured by the atomic absorption method can be measured.
Here, the measuring apparatus of the present invention changes the flux passing position of the measuring light in the x direction by regulating the flux F using a shielding plate. Therefore, it can be particularly suitably used for measurement of highly straight atoms such as copper, indium, and gallium.

Hereinafter, the operation of the film forming apparatus 10 will be described.
When the substrate roll 12 is mounted on the rotating shaft 26, the substrate Z is pulled out from the substrate roll 12, and the guide rollers 28 a to 28 c in the supply chamber 18, the guide roller 38 in each film formation chamber in the film formation zone 20, and the final guide. The roller 46 and the guide rollers 54 a to 54 d in the winding chamber 24 are passed through a predetermined conveying path that reaches the winding shaft 14.
In the film formation zone 20, each evaporation source 36 in each film formation chamber is filled with a film formation material corresponding to the film to be formed.

When the substrate Z is inserted through the predetermined transport path and the filling of the film forming material is completed, the vacuum chamber 16 is closed, and the vacuum evacuation means 30, 42, and 56 are driven.
When the pressure in each chamber is stabilized and the temperature of each evaporation source is stabilized, the conveyance of the substrate Z is started, and when the conveyance speed of the substrate Z is stabilized, the deposition is performed in each deposition chamber of the deposition zone 20. The shutter of the source is opened and film formation on the substrate Z is started.
The substrate Z sent out from the substrate roll 12 is transferred from the supply chamber 18 to the film formation zone 20, heated in each film formation chamber by the heating means 38, and formed into a film by the evaporation source 36. It is conveyed, wound around the take-up shaft 14, and is again rolled.

Here, during the film formation on the substrate Z, the film forming apparatus 10 uses the measuring unit 70 to measure each film forming material in the x direction (direction orthogonal to the substrate transport direction (y direction) (width direction of the substrate Z)). ) To measure the flux distribution. Further, as described above, each evaporation source 36 has a long rectangular shape extending in the x direction, and is configured to control heating in each region divided in the x direction.
In the film forming apparatus 10, the heating of the evaporation source 36 of each film forming material is controlled in accordance with the measured flux distribution in the x direction so that each film forming material forming the film has a predetermined ratio and amount. . Furthermore, according to the measured flux distribution in the x direction, the heating of each region in the x direction is controlled in each evaporation source 36 so that the film forming material becomes uniform in the x direction.
Therefore, according to the film forming apparatus 10 using the measuring means 70 of the present invention, a film with a proper amount ratio of components by each film forming material in the formed film and uniform in the x direction can be stably formed. To form a film.

  As mentioned above, although the vapor deposition flux measuring apparatus of this invention was demonstrated in detail, this invention is not limited to the above-mentioned example, You may perform various improvement and change in the range which does not deviate from the summary of this invention. Of course.

For example, in the illustrated example, the deposition flux measuring apparatus of the present invention is used in a roll-to-roll apparatus that performs film formation while transporting a long substrate Z in the longitudinal direction. However, the present invention is not limited to this, and can be suitably used for a film forming apparatus that forms a film while transporting a cut sheet substrate in a predetermined direction (y direction).
In addition, the present invention is not limited to the measurement of the deposition flux in film formation by vapor deposition such as vacuum vapor deposition, and can also be used for film formation by sputtering.

  For example, it can be suitably used for management of a deposition rate (film formation rate) in film formation by vacuum deposition or the like, such as CIGS film formation used for solar cells.

DESCRIPTION OF SYMBOLS 10 Film-forming apparatus 12 Substrate roll 14 Winding shaft 16 Vacuum chamber 18 Supply chamber 20 Film-forming zone 20a 1st film-forming chamber 20b 2nd film-forming chamber 20c 3rd film-forming chamber 24 Wind-up chamber 26 Rotating shafts 28a-28c, 38, 46, 54a to 54d Guide rollers 34, 48, 50 Bulkhead 30, 42, 56 Vacuum evacuation means 36 Evaporation source 70 (deposition flux) measuring device 72 Light source 74 Receiver 76, 82, 86, 90 Shield plate 78 Window portion 80, 98, 100 Mirror 92 Endless belt 94 Roller

Claims (11)

A vapor deposition flux measuring device that measures a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction,
The measurement light for measuring the deposition flux passes through the measurement light source and the deposition flux measurement area, which are arranged so as to pass through a predetermined deposition flux measurement area in the x direction. A receiver for measuring the amount of measured light,
A shielding plate for shielding the vapor deposition flux, disposed below the optical path of the measurement light passing through the measurement region of the vapor deposition flux;
And moving means for changing the passage position of the measurement light in the x direction with respect to the vapor deposition flux not shielded by the shielding plate by relatively moving the optical path of the measuring light and the shielding plate. Evaporation flux measuring device.   The vapor deposition flux measuring apparatus according to claim 1, wherein the shielding plate has an end portion extending in the x direction and inclined with respect to the x direction.   The vapor deposition according to claim 2, wherein the moving unit moves the optical path of the measurement light in at least one direction opposite to the y direction and the y direction so as to pass through an upper portion of the inclined end portion of the shielding plate. Flux measuring device.   The said moving means moves the said shielding board to at least 1 direction opposite to the said y direction and the said y direction so that the inclination edge part of the said shielding board may pass the lower part of the optical path of the said measurement light. Or the vapor deposition flux measuring apparatus of 3.   The moving unit changes an angle of the optical path of the measurement light with respect to the x direction with a predetermined center point as an axis, and changes an intersection of the end of the shielding plate and the optical path of the measurement light in the x direction. The vapor deposition flux measuring apparatus according to claim 1, wherein the light source and the light receiver are moved.   The vapor deposition flux measuring apparatus according to claim 5, wherein a mask that regulates the film formation region in the y direction also serves as the shielding plate. The shielding plate is a plate-like object disposed below the optical path of the measurement light;
The vapor deposition flux measuring apparatus according to claim 1, wherein the moving means moves the plate-like object along the optical path of the measuring light.   The vapor deposition flux measuring apparatus according to any one of claims 1 to 7, wherein the film formation on the substrate is performed while the long substrate is conveyed while the longitudinal direction and the y direction are matched.   The vapor deposition flux measuring apparatus according to any one of claims 1 to 8, wherein the light source and the light receiver are disposed outside the film forming chamber in the x direction.   The vapor deposition flux measuring apparatus according to any one of claims 1 to 9, wherein two combinations of the light source and the light receiver and the shielding plate are separated from each other in the y direction.   The vapor deposition flux measurement apparatus according to claim 10, wherein the measurement light is incident on a light receiver disposed upstream and downstream in the y direction by switching an optical path of the measurement light from one light source with a mirror.

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