JP5465136B2 - Vapor deposition flux measuring device and vacuum vapor deposition device - Google Patents

Description

  The present invention relates to a deposition flux measuring apparatus and a vacuum deposition apparatus using the measuring apparatus, which are used to control a deposition rate in deposition by vacuum deposition.

  In film formation by vacuum deposition or the like, the film formation rate or the like is measured by measuring the vapor deposition flux (vapor of the film formation material (evaporation particles of the film formation material)) from the evaporation source to the substrate to be formed by atomic absorption spectrometry. It is known to control.

For example, as disclosed in Patent Document 1, a method for measuring the vapor deposition flux (hereinafter referred to as a flux) includes a light source such as a holocathode lamp that emits measurement light having a wavelength corresponding to a film forming material for measuring the flux. Using a light receiver that measures the amount of measurement light, the measurement light emitted from the light source is passed through the flux in the vicinity of the substrate, and the measurement light that has passed through the flux is measured by the light receiver.
The amount of the measurement light that has passed through the flux is absorbed and reduced in accordance with the amount of the measurement component (measuring particle) in the flux. Therefore, by measuring the amount of measurement light that has passed through the flux, the amount of film-forming material that flies toward the substrate can be measured. For example, the heating in the evaporation source can be controlled accordingly. Thus, the film formation rate can be managed.

  In such flux measurement, when the flux distribution is measured in a plane parallel to the substrate surface, it is necessary to measure the flux at a plurality of points in a predetermined direction. For example, when measuring the flux distribution in the x direction on the xy plane, it is necessary to perform measurement that passes the flux in the y direction at a plurality of points in the x direction.

If film formation is performed on a fixed substrate (substrate held at a predetermined position) as shown in Patent Document 1, the flux distribution can be measured in both the x and y directions by this measurement method. it can.
However, this measurement is required when film formation is performed while transporting a substrate in a specified direction, such as when performing film formation by roll-to-roll (Roll to Roll) while transporting a long substrate. It is difficult to measure the flux distribution in the direction orthogonal to the conveying direction by this method. In particular, when a plurality of stages of film formation are performed in a plurality of film formation chambers arranged in the substrate transport direction, it is difficult to measure the flux distribution in the direction orthogonal to the transport direction by this measurement method.

JP 2001-108615 A

  As is well known, roll-to-roll film formation uses a supply roll formed by winding a long substrate (web-like substrate) into a roll, and transports the substrate fed from the supply roll to the film formation chamber. Then, the film is formed while being conveyed in the longitudinal direction in the film formation chamber, and the long substrate on which the film has been formed is again wound into a roll shape.

Here, when measuring the flux distribution in the width direction (x direction) of the substrate, it is necessary to perform the measurement of passing the flux in the substrate transport direction (y direction) at a plurality of points in the width direction. However, in film formation by roll-to-roll, the film formation chamber often becomes longer in the transport direction. In this case, in order to measure the flux distribution in the width direction, it is necessary to arrange a light source such as a holocathode lamp or a light receiver in the film forming chamber.
However, if a light source or a light receiver is disposed in the film forming chamber, it is naturally contaminated by flux (film forming material vapor), and accurate measurement cannot be performed gradually.

If the length of the film forming chamber in the transport direction is short, a light source and a light receiver can be arranged outside the film forming chamber so as to face the transport direction. However, even in this case, when a plurality of film formation chambers are arranged in the substrate transfer direction and a plurality of stages of film formation are performed, the result is that a light source or the like is arranged in the adjacent film formation chamber. Accurate measurement cannot be performed.
Such a problem is not limited to film formation by roll-to-roll, but also when film formation is performed while a sheet-like substrate is conveyed.

  An object of the present invention is to solve the above-mentioned problems of the prior art, and when film formation is performed in vacuum deposition using roll-to-roll, a light source such as a holocathode lamp and a light receiver are used as a flux. Flux measuring apparatus capable of measuring the flux distribution in the direction (x direction) perpendicular to the substrate transport direction (y direction) by measuring the deposition flux using atomic absorption method without being contaminated by The object is to provide a vacuum deposition apparatus using

  In order to achieve the above object, the present invention provides a deposition flux measurement for measuring a deposition flux in the x direction orthogonal to the y direction when a film is deposited on the substrate by deposition while the substrate is transported in the y direction. An apparatus, a light source for irradiating measurement light for measuring the deposition flux, a light receiver for measuring the amount of the measurement light that has passed through the measurement region of the deposition flux, and extending in the x direction, and A first and second cylindrical portions that are spaced apart in the y direction and that have a measurement light transmission region extending in the x direction and are hermetically separated from the film formation space by the vapor deposition; In the first cylindrical part, the light source moving means for moving the light source in the x direction, and in the second cylindrical part, the light receiver is moved in the x direction in synchronization with the movement of the light source. A receiver moving means. Providing a deposition flux measuring apparatus according to claim.

In order to achieve the above object, the present invention provides a vapor deposition for measuring a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction. A flux measuring device, having a measurement light transmission region extending in the x direction and extending in the x direction and spaced apart in the y direction; A light source that irradiates measurement light for measuring the vapor flux so as to pass through the first cylindrical part in the x direction, the first and second cylindrical parts separated in an airtight manner, and
A first mirror that reflects the measurement light emitted from the light source to the second cylindrical part in the first cylindrical part, and a first mirror in the second cylindrical part. The second mirror that reflects the reflected measurement light in the x direction, a light receiver that receives the measurement light reflected by the second mirror, and the first and second mirrors are synchronized. And a moving means for moving the vapor deposition flux.

In order to achieve the above object, the present invention provides a vapor deposition for measuring a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction. A flux measuring device, having a measurement light transmission region extending in the x direction and extending in the x direction and spaced apart in the y direction; A light source that emits measurement light for measuring the vapor flux so as to pass through the first cylindrical portion in the x direction, the first and second cylindrical portions being hermetically separated; A plurality of first mirrors arranged in the y direction and reflecting the measurement light emitted from the light source to the second cylindrical portion in the first cylindrical portion, and the second cylindrical shape The first mirror arranged in the y direction in the unit Vapor deposition flux measurement comprising: a plurality of second mirrors that reflect the reflected measurement light in the x direction; and a light receiver that receives the measurement light reflected by the second mirror. Providing equipment.
Here, it is preferable that the plurality of first mirrors are half mirrors.

In such a vapor deposition flux measuring apparatus of the present invention, it is preferable that the first cylindrical portion and the second cylindrical portion penetrate a vacuum chamber forming a film formation space in the x direction.
Moreover, it is preferable that the first cylindrical portion and the second cylindrical portion are disposed under a mask that restricts the film forming region in the y direction.
Alternatively, it is preferable that the first cylindrical portion and the second cylindrical portion also serve as a mask that regulates the film formation region in the y direction.

In addition, the first cylindrical portion and the second cylindrical portion have flux shielding members that extend in the x direction with the optical path of the measurement light interposed therebetween and project toward the cylindrical portions. It is preferable.
Moreover, it is preferable that the flux shielding member also serves as a mask that regulates the film forming region in the y direction.
Moreover, it is preferable to measure the flux in the y direction at a plurality of locations in the x direction.

  Moreover, in order to achieve the said objective, it is preferable that this invention provides the vacuum deposition apparatus characterized by having the deposition flux measuring apparatus in any one of said.

Here, it is preferable to feed back the measurement result of the vapor deposition flux and control the distribution of the vapor deposition flux in the x direction.
Moreover, it is preferable that film-forming to the said board | substrate performs vapor deposition, conveying a long board | substrate, making a longitudinal direction and a y direction correspond.
In addition, it is preferable that a plurality of film forming sources be arranged in the film forming chamber to form a film by vapor deposition.
Moreover, it is preferable to have a plurality of film forming chambers and to measure the vapor deposition flux in the x direction in each film forming chamber.

According to the present invention, when film formation is performed while the substrate is transported in the y direction, the film formation extends in the x direction perpendicular to the y direction and is spaced apart in the y direction. In the first and second cylindrical portions that are airtightly separated from the space, in the first cylindrical portion, the moving means that moves the light source or the first mirror in the x direction, and in the second cylindrical portion And a moving means for moving the light receiver or the second mirror in the x direction in synchronization with the light source or the first movement, thereby changing the passing position of the measuring light in the x direction with respect to the vapor deposition flux. The vapor deposition flux distribution in the direction can be measured.
Therefore, according to the vapor deposition flux measuring apparatus of the present invention, the film distribution can be controlled by properly grasping the flux distribution in the x direction in a roll-to-roll film forming apparatus or the like. Can be performed stably. Further, since the light source and the light receiver or the mirror can be arranged outside the film forming chamber or inside the cylindrical portion, contamination of the light source due to the film forming material can be prevented.

It is a figure which shows notionally the vacuum deposition apparatus of this invention using an example of the deposition flux measuring apparatus of this invention. It is a figure which shows notionally the sectional view on the AA line of the vacuum evaporation system shown in FIG. It is a figure which shows notionally another example of the vapor deposition flux measuring apparatus of this invention. It is a figure which shows notionally a part of other example of the vapor deposition flux measuring apparatus of this invention.

  Hereinafter, the vapor deposition flux measuring apparatus and the vacuum vapor deposition apparatus of the present invention will be described in detail based on the preferred examples shown in the accompanying drawings.

In FIG. 1, an example of the vacuum evaporation system of this invention which utilizes an example of the evaporation flux measuring apparatus of this invention is shown notionally.
A film forming apparatus (vacuum evaporation apparatus) 10 shown in FIG. 1 sends out a substrate from a substrate roll 12 formed by winding a long substrate Z (web-shaped substrate Z) in a roll shape, and conveys the substrate in the longitudinal direction. This is a so-called roll-to-roll film forming apparatus in which a film is formed by vacuum deposition and the film-formed substrate Z is again wound around the take-up shaft 14 to form a roll.
In the illustrated example, the film forming apparatus 10 includes three film forming chambers formed in a vacuum chamber 16, which are a supply chamber 18, a first film forming chamber 20a, a second film forming chamber 20b, and a third film forming chamber 20c. A film forming zone 20 having a winding chamber 24 and a winding chamber 24.

The supply chamber 18 is a chamber for delivering the substrate Z from the substrate roll 12 and transporting it to the film formation zone 20 (first film formation chamber 20a). The supply chamber 18 is provided with a rotary shaft 26, guide rollers 28a to 28c, a vacuum exhaust means 30, and the like. It is comprised.
The substrate roll 12 is loaded on the rotating shaft 26. The rotating shaft 26 loaded with the substrate roll 12 rotates clockwise in the drawing, and sends out the substrate Z wound around the substrate roll 12 in the longitudinal direction (y direction in the drawing).
The guide rollers 28a to 28c are known guide rollers, and may be drive rollers or driven rollers. In this regard, the same applies to each guide roller described later.

The vacuum exhaust means 30 is for reducing the pressure in the supply chamber 18 to a predetermined pressure (degree of vacuum).
The vacuum exhaust means 30 is not particularly limited, and includes a vacuum pump such as a turbo pump, a mechanical booster pump, a rotary pump, and a dry pump, an auxiliary means such as a cryocoil, and a means for adjusting the ultimate vacuum and the exhaust amount. Various known (vacuum) evacuation means used in the vacuum film forming apparatus can be used. In this regard, the same applies to the vacuum exhaust means 42 and 56 described later.

  The substrate Z sent out from the substrate roll 12 is conveyed in the y direction (longitudinal direction) and guided by the guide rolls 28a to 28c to separate the supply chamber 18 and the film formation zone 20 (first film formation chamber 20a). Then, the film is transported to the film formation zone 20 from the carry-in port 34 a formed in the partition wall 34.

The film formation zone 20 is for performing film formation on the surface of the substrate Z by vacuum vapor deposition, and is arranged in the transport direction of the substrate Z to form the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation. The chamber 20c has three film forming chambers.
The first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber have basically the same configuration, and include an evaporation source 36, a guide roller 38, masks 40a and 40b, and a vacuum. It has an exhaust means 42 and a vapor deposition flux measuring device 70. Only the most downstream third film formation chamber 20c has a guide roller 46 at the most downstream position.
Further, the film forming chambers are separated from each other by a partition wall 48 having a carry-in port 48a for the substrate Z.

The first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c are for performing film formation on the surface of the substrate Z transported in the y direction by vacuum deposition.
In the illustrated example, each film forming chamber is a film forming chamber capable of performing multi-source simultaneous vapor deposition, and four evaporation sources (vapor deposition sources) 36 are arranged in the transport direction of the substrate Z.
The evaporation source 36 is a known evaporation source (deposition source / crucible) used for vacuum evaporation. The evaporation source 36 may be heated by various known methods used in vacuum deposition, such as resistance heating, electron beam heating, induction heating, and the like.
Further, although not shown in the drawings, various members of a known vacuum vapor deposition apparatus such as a shutter for closing the vapor deposition source and a temperature adjusting means for the substrate Z are arranged in each film forming chamber as necessary. .

Here, as an example, the evaporation source 36 is a long rectangle extending in the x direction (width direction of the substrate Z) orthogonal to the y direction, which is the transport direction of the substrate Z (longitudinal direction of the substrate Z), Each region divided in the x direction is configured to be able to control heating.
The heating of the evaporation source 36 is controlled in accordance with, for example, the measurement result of the vapor deposition flux by the vapor deposition flux measuring device 70 described later.

The masks 40a and 40b are well-known masks that regulate a film formation region in the transport direction (y direction) of the substrate Z.
In the illustrated example, the mask 40a regulates the film forming region on the upstream side in the transport direction of the substrate Z, and the mask 40b regulates the film forming region on the downstream side. Each mask has a size covering almost the entire region in the film forming chamber in a direction (x direction) orthogonal to the transport direction.

  The vacuum exhaust means 42 is a vacuum exhaust means for exhausting the film forming chamber to a pressure corresponding to vacuum deposition to be performed.

The vapor deposition flux measuring device 70 (hereinafter referred to as the measuring device 70) measures the flux (vapor of the film forming material (evaporated particles of the film forming material)) by vacuum vapor deposition in each film forming chamber by the atomic absorption method. Is.
FIG. 2 conceptually shows a cross-sectional view taken along line AA of the film forming apparatus shown in FIG. In FIG. 2, the moving means 82 is not shown.
The measuring device 70 includes a light source 72, a light receiver 74, a first cylindrical portion 76, a second cylindrical portion 78, a first mirror 80a, a second mirror 80b, and a moving means 82. And shielding plates 84a, 84b, 86a and 86b.

  The measuring device 70 of the present invention can measure flux at a plurality of positions in the x direction (width direction of the substrate Z) orthogonal to the y direction, which is the transport direction of the substrate Z (longitudinal direction of the substrate Z). That is, the apparatus can measure the flux distribution in the x direction. In the illustrated example, the measuring apparatus 70 is disposed in each of the first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber 20c.

The light source 72 irradiates the measurement light L for measuring the flux by the atomic absorption method.
In the measuring apparatus 70 of the present invention, the flux measuring method itself is basically a known flux measuring method using an atomic absorption method. Therefore, the light source 72 is a known light source used for flux measurement by atomic absorption method, such as a holo cathode lamp that irradiates light having a wavelength absorbed by the flux according to the flux to be measured (film forming material atoms). Use it.

For example, in the CIGS film formation by the multi-source co-deposition described above, when measuring the copper flux, the copper holocathode lamp is used. When measuring the indium flux, the indium holocathode lamp is used, and the gallium flux. In the measurement, a gallium holocathode lamp may be used as the light source 72, respectively.
When measuring the flux of a plurality of film forming materials (atoms), a light source corresponding to each film forming material is placed on a rotatable turret or the like, and the light source corresponding to the film forming material to be measured. May be used. Alternatively, the flux of the target film forming material may be measured by analyzing the wavelength using a light source that emits light having a normal continuous wavelength.

The light source 72 is arranged so that the optical path of the measurement light L from the light source 72 to the first mirror 80a arranged in the cylinder of the first cylindrical portion 76 described later coincides with the x direction.
The light source 72 is disposed outside the vacuum chamber 16. That is, the light source 72 is outside the x-direction chamber wall 16a that forms the first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber 20c (in FIG. 1, the outside in the direction perpendicular to the paper surface). Placed in.

  The first cylindrical portion 76 is a cylindrical member having a rectangular cross-section in the direction perpendicular to the axis, and extends in the x direction, and is disposed downstream of the evaporation source 36 in the film forming chamber. Yes. Further, the first cylindrical portion 76 is disposed below the mask 40 (on the film forming source 36 side). In the cylinder of the first cylindrical portion 76, a first mirror 80a and a moving means 82, which will be described later, are arranged. The length of the first cylindrical portion 76 in the axial direction is equal to the width of the film forming chamber in the x direction, and the first cylindrical portion 76 penetrates the film forming chamber in the x direction. It arrange | positions so that the cylinder inside of the cylindrical part 76 and the exterior of the film-forming chamber may communicate. In other words, the inside of the first cylindrical portion 76 and the film forming chamber are hermetically separated, and the film deposit is prevented from being deposited on the first mirror 80a and the moving means 82 arranged in the cylinder. To do.

  Further, the surface of the first cylindrical portion 76 on the evaporation source 36 side is made of a light transmissive material such as quartz glass so that the measurement light L for measuring the flux can pass therethrough. A window 76a is formed. The transmission window 76a has a sufficient length in the x direction according to the amount of movement of the first mirror 80a described later. Further, the transmission window 76a only needs to be formed in a height sufficient for the measurement light L to pass in the vertical direction (direction perpendicular to the x direction and the y direction).

  The second cylindrical portion 78 is a cylindrical member having a rectangular cross section in a direction perpendicular to the axis, and extends in the x direction, and is disposed on the upstream side of the evaporation source 36 in the film forming chamber. Yes. The second cylindrical portion 78 is disposed below the mask 40 (on the film forming source 36 side). A second mirror 80b and a moving means 82, which will be described later, are disposed in the cylinder of the second cylindrical portion 78. The length of the second cylindrical portion 78 in the axial direction is equal to the width of the film forming chamber in the x direction, and the second cylindrical portion 78 penetrates the film forming chamber in the x direction. It arrange | positions so that the cylinder inside of the cylindrical part 78 and the exterior of the film-forming chamber may communicate. In other words, the inside of the second cylindrical portion 78 and the film forming chamber are separated from each other in an airtight manner, and deposition of the film formation on the second mirror 80b and the moving means 82 disposed in the cylinder is prevented. To do.

  In addition, a transmission window 78a made of a light transmissive material is formed on the surface of the second cylindrical portion 78 on the evaporation source 36 side so that the measurement light L for measuring the flux can pass therethrough. Yes. The transmission window 78a has a sufficient length in the x direction according to the amount of movement of a second mirror 80b described later. Further, the transmission window 78a only needs to be formed in a height sufficient for the measurement light L to pass in the vertical direction (direction perpendicular to the x direction and the y direction).

  In the illustrated example, the first cylindrical portion 76 and the second cylindrical portion 78 have transmission windows 76a and 78a for allowing the measurement light L to pass therethrough, but the present invention is not limited thereto. The entire cylindrical portion may be formed of a light transmissive material.

  The first mirror 80a and the second mirror 80b are for guiding the measurement light L emitted from the light source 72 to a predetermined optical path. The first mirror 80a and the second mirror 80b only need to be able to reflect the measurement light L, and a known mirror may be used.

Specifically, the first mirror 80a is disposed so as to be movable in the cylinder of the first cylindrical portion 76, reflects the measurement light L emitted from the light source 72, and enters the measurement light from the x direction. The optical axis of L is matched with the y direction. The measurement light L reflected by the first mirror 80a passes on the evaporation source 36, that is, in the flux, and reaches the second mirror 80b.
The second mirror 80b is arranged so as to be movable in the cylinder of the second cylindrical portion 78, reflects the measurement light L reflected by the first mirror 80a, and enters the measurement light from the y direction. The optical axis of L is matched with the x direction. The measurement light L reflected by the second mirror 80 b reaches the light receiver 74.

The light receiver 74 measures the light amount of the measurement light L, and all the light receivers that can measure the light amount (luminance / light intensity) of the measurement light L and are used for flux measurement by a known atomic absorption method are used. Is possible.
In the measuring device 70, the amount of flux is detected by, for example, detecting the relationship between the amount of the measuring light L received by the light receiver 74 and the amount of the flux in advance through experiments, simulations, etc., and creating a table. For example, a known method used in a flux measurement method using an atomic absorption method may be used.

The light receiver 74 is disposed such that the optical path of the measurement light L from the second mirror 80b disposed in the cylinder of the second cylindrical portion 78 to the light receiver 74 coincides with the x direction.
The light receiver 74 is disposed outside the vacuum chamber 16. In other words, the light receiver 74 is located outside the x-direction chamber wall 16a that forms the first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber 20c (in FIG. 1, the outside perpendicular to the paper surface). ).

The moving means 82 is for moving the first mirror 80a and the second mirror 80b in the x direction within the cylinders of the first cylindrical portion 76 and the second cylindrical portion 78, respectively.
The moving means 82 is not particularly limited, and various known moving means such as a single-axis actuator, rack and pinion, screw transmission, and a moving method using a pulley and a belt can be used.
The moving unit 82 moves the first mirror 80a and the second mirror 80b by matching (synchronizing) the positions of the first mirror 80a and the second mirror 80b in the x direction.

  The moving means 82 moves the first mirror 80a and the second mirror 80b in the x direction, so that the measurement of passing the flux in the y direction can be performed at a plurality of locations in the x direction. Thereby, the flux distribution in the x direction can be measured.

The measuring device 70 in the illustrated example has shielding plates 84a, 84b, 86a, and 86b as a preferred embodiment.
The shielding plates 84 a, 84 b, 86 a and 86 b are plate-like plates that prevent the deposition from being deposited on the transmission window 76 a of the first cylindrical portion 76 and the transmission window 78 a of the second cylindrical portion 78. It is a shielding plate.

Specifically, the shielding plate 84a and the shielding plate 86a are disposed on the outer surface of the first cylindrical portion 76 below and above the transmission window 76a, respectively. That is, the shielding plate 84a and the shielding plate 86a are arranged so that the measurement light reflected by the mirror 80a passes between the shielding plate 84a and the shielding plate 86a.
Further, the shielding plate 84b and the shielding plate 86b are respectively disposed on the outer surface of the second cylindrical portion 78 below and above the transmission window 78a. That is, the shielding plate 84b and the shielding plate 86b are arranged so that the measurement light incident on the mirror 80b passes between the shielding plate 84b and the shielding plate 86b.

  The shielding plates 84 a, 84 b, 86 a and 86 b are arranged to prevent deposition of a film deposit on the transmission window 76 a of the first cylindrical portion 76 and the transmission window 78 a of the second cylindrical portion 78. As a result, it is possible to prevent the optical path of the measurement light L from being contaminated by the film-formed material and preventing accurate measurement.

As described above, in the flux measurement method described in Patent Document 1 or the like, in order to measure the flux distribution in the x direction, a light source and a light receiver are arranged so as to irradiate measurement light in the y direction, and x It is necessary to measure the flux at multiple points in the direction.
However, in roll-to-roll film formation, the film formation chamber may become longer in the transport direction. At this time, even if measurement is performed with a light source or a light receiver placed outside the film forming chamber, the amount of light absorption increases, and there is a possibility that accurate flux measurement cannot be performed. In addition, when a plurality of film forming chambers are provided, the flux components from the respective film forming chambers are simultaneously measured, so that accurate flux measurement cannot be performed.
Further, if a light source or a light receiver is disposed in the film forming chamber in order to measure the flux distribution in the width direction, naturally, it is contaminated by the flux (film forming material vapor), and accurate measurement becomes gradually impossible.

  On the other hand, in the present invention, on the upstream side and the downstream side of the vapor deposition flux measurement region, a cylindrical cylindrical part having a measurement light transmission window is disposed, and a light source and a light receiver in the cylinder, or A mirror is disposed, and the light source and the light receiver or the mirror are moved within the cylindrical portion. Thereby, the passage position of the measurement light with respect to the vapor deposition flux in the x direction (direction perpendicular to the y direction) can be changed, and thereby the vapor deposition flux distribution in the x direction can be measured. Therefore, as in the film forming apparatus 10 shown in FIG. 1, an apparatus including a plurality of film forming chambers and a plurality of evaporation sources are formed while the long substrate Z is transported in the longitudinal direction. Even in the apparatus having the above, it is possible to prevent the light source, the light receiver, the mirror and the like from being contaminated, and the flux distribution in the x direction can be preferably measured.

  In the illustrated measurement apparatus 70, the light source 72 is disposed downstream of the flux measurement region and the light receiver 74 is disposed upstream of the flux measurement region. However, the present invention is not limited to this. It may be arranged on the upstream side of the measurement area, and the light receiver 74 may be arranged on the downstream side of the flux measurement area.

Further, in the measuring apparatus 70 of the illustrated example, the first cylindrical portion 76 and the second cylindrical shape are provided with the first cylindrical portion 76 and the second cylindrical portion 78 and the masks 40a and 40b as separate members. Although the portion 78 is disposed below the masks 40a and 40b, the present invention is not limited to this, and the first cylindrical portion 76 and the second cylindrical portion 78 may also serve as a mask, or the shielding plate 84a. , 84b, 86a and 86b may also serve as a mask.
By forming the mask as a separate member and disposing it above the first cylindrical portion 76 and the second cylindrical portion 78, that is, at a position closer to the substrate Z, the film formation region can be more accurately defined. On the other hand, the configuration is simplified by using the mask also as another member.

  In the illustrated example, the cylindrical portions (the first cylindrical portion 76 and the second cylindrical portion 78) penetrate the film formation chamber in the x direction. If the inside of the shape part and the film forming chamber are separated in an airtight manner and a desired flux distribution in the x-direction can be measured, it may not be penetrated.

  Further, in the illustrated measuring apparatus 70, the first mirror 80a and the second mirror 80b are disposed in the cylinders of the first cylindrical portion 76 and the second cylindrical portion 78, respectively. Although the mirror 80a and the second mirror 80b are moved by the moving means 82, the present invention is not limited to this, and the light source 72 and the light receiver 74 may be arranged and moved in the cylindrical portion. .

FIG. 3 is a diagram conceptually showing another example of the vapor deposition flux measuring apparatus of the present invention.
The vapor deposition flux measuring apparatus 100 shown in FIG. 3 has the same configuration as the measuring apparatus 70 shown in FIG. 2 except that the light source 72 and the light receiver 74 are arranged in the cylinder instead of the mirrors 80a and 80b. Therefore, the same parts are denoted by the same reference numerals, and the following explanation will mainly be made on different parts.

The measuring apparatus 100 has a configuration in which the light source 72 is arranged in the cylinder of the first cylindrical portion 76 and the light receiver 74 is arranged in the cylinder of the second cylindrical portion 78.
The light source 72 is arranged so that the optical axis of the measurement light L to be irradiated coincides with the y direction. The measurement light L irradiated by the light source 72 passes through the flux and reaches the light receiver 74. Further, the light source 72 is moved in the x direction within the cylinder of the first cylindrical portion 76 by a moving means 82 (not shown).
The light receiver 74 is disposed at a position within the cylinder of the second cylindrical portion 78 to receive the measurement light L irradiated by the light source 72. Further, the light receiver 74 is moved in the x direction in the cylinder of the second cylindrical portion 78 by the moving means 82 (not shown) according to the movement of the light source 72.

  As described above, the light source 72 and the light receiver are also provided by the configuration in which the light source 72 is disposed in the cylinder of the first tubular portion 76 and the light receiver 74 is movably disposed in the cylinder of the second tubular portion 78. By moving 74 in the x direction, the flux can be measured at a plurality of locations in the x direction, the vapor deposition flux distribution can be measured, and the film is formed while conveying the long substrate Z in the longitudinal direction. Even in an apparatus having a plurality of film forming chambers and an apparatus having a plurality of evaporation sources, the light source and the light receiver can be prevented from being contaminated, and the vapor deposition flux distribution in the x direction is preferably measured. be able to.

In the illustrated measurement apparatus 70, the mirrors 80a and 80b are moved to perform measurement at a plurality of positions in the x direction. However, the present invention is not limited to this, and a plurality of mirrors are arranged in the x direction. It is good also as a structure arranged in order.
In FIG. 4, a part of other example of the vapor deposition flux measuring apparatus of this invention is shown. 4 has the same configuration except that it has a plurality of half mirrors 112, a plurality of mirrors 114, and a light receiver 116 instead of the mirrors 80a and 80b and the moving means 82. The same parts are denoted by the same reference numerals, and different parts are mainly described below.

  The measuring apparatus 110 arranges the plurality of half mirrors 112 in the cylinder of the first cylindrical portion 76 in the x direction and arranges the plurality of mirrors 114 in the cylinder of the second cylindrical portion 78 in the x direction and It has the structure which arranges and arranges in ay direction. In addition, the light receiver 116 receives each of the plurality of measurement lights and measures the amount of the measurement light.

The half mirror 112 is arranged in the x direction in the cylinder of the first cylindrical portion 76, reflects a part of the measurement light emitted from the light source 72, and sets the optical axis of the measurement light to y. Match the direction. Further, the measurement light that has not been reflected by the half mirror 112 reaches the next half mirror 112, and a part of the measurement light is reflected so that the optical axis coincides with the y direction.
The measurement light reflected by the half mirror 112 passes over the evaporation source 36 (in the flux) and reaches the mirror 114.
In this way, a plurality of half mirrors 112 are arranged in the cylindrical portion, and the measurement light emitted from the light source 72 is separated so that the measurement light passes through the flux at a plurality of locations in the x direction. The flux can be measured at a plurality of locations in the x direction, and the vapor deposition flux distribution can be measured.

  The mirror 114 is arranged in the cylinder of the second cylindrical portion 78 in the x direction and the y direction, reflects the measurement light incident from the y direction, and matches the optical axis of the measurement light with the x direction. . Specifically, in the x direction, the mirror 114 is arranged at each of the positions where the plurality of measurement lights reflected by the half mirror 112 are incident, corresponding to the positions of the plurality of half mirrors 112 in the x direction. Further, in the y direction, they are respectively arranged at positions corresponding to a plurality of light receiving portions of a light receiver 116 described later. The measurement light reflected by the mirror 114 reaches the light receiver 116 without interference between the measurement lights.

  The light receiver 116 is a light receiver having a plurality of light receiving units that independently receive a plurality of measurement lights reflected by the plurality of mirrors 114.

  In this way, the plurality of half mirrors 112 are arranged in the x direction in the cylinder of the first cylindrical portion 76, and the plurality of mirrors 114 are arranged in the x direction and y in the cylinder of the second cylindrical portion 78. Even with the arrangement arranged in the direction, the flux can be measured at a plurality of locations in the x direction, the deposition flux distribution can be measured, and the long substrate Z is conveyed in the longitudinal direction. Even in a device that forms a film and has a plurality of film forming chambers or a device that has a plurality of evaporation sources, it is possible to prevent the light source and the light receiver from being contaminated, and to appropriately distribute the vapor deposition flux in the x direction. Can be measured.

In the measurement apparatus 110 of the illustrated example, the plurality of half mirrors 112 are arranged in the cylinder of the first cylindrical portion 76, but the present invention is not limited thereto, and the inside of the second cylindrical portion 78 is not limited thereto. Similarly to the mirror 114 arranged in the above, the mirrors may be arranged in the x direction and the y direction, and a plurality of light sources may be provided, or a moving unit that moves the light sources in the y direction may be provided.
A configuration in which a plurality of half mirrors are arranged and arranged in the cylindrical portion is preferable in that it does not require the use of a plurality of light sources or a light source moving means, and the configuration is simplified.

  In the illustrated measurement apparatus 110, a plurality of mirrors (half mirrors) are arranged in two cylindrical parts. However, the present invention is not limited to this, and a mirror (half mirror) is provided in one cylindrical part. And a mirror, or a light source or a light receiver may be movably disposed in the other cylindrical portion.

  In the illustrated measurement apparatus 110, the light receiver 116 having a plurality of light receiving units is used. However, the present invention is not limited to this, and a plurality of light receivers having one light receiving unit are arranged in the y direction. Alternatively, one light receiver may be moved in the y direction by the moving means so as to receive light corresponding to a plurality of measurement lights.

In the illustrated film forming apparatus 10, in the film forming zone 20, the same film may be formed in each film forming chamber of the first film forming chamber 20a, the second film forming chamber 20b, and the third film forming chamber 20c. It can be different. In the film formation zone 20, the film formation may be performed using all three film formation chambers, or the film formation may be performed using only one or two chambers.
Furthermore, it is not always necessary to use all the evaporation sources 36 in each film forming chamber.

For example, when forming a CIGC film in the film formation zone 20 (film formation apparatus 10) by the three-stage method of multi-source co-evaporation, in the first film formation chamber 20a, each of the three evaporation sources 36 is supplied with In. , Ga, and Se, in the second film formation chamber 20b, the two evaporation sources 36 are filled with Cu and Se, respectively, and in the third film formation chamber 20c, the three evaporation sources 36 are Each is filled with In, Ga, and Se.
Then, while transporting the substrate Z, indium, gallium, and selenium are co-evaporated in the first film formation chamber 20, and then copper and selenium are co-evaporated in the second film formation chamber 20b. CIGS is deposited on the substrate Z by simultaneously depositing indium, gallium, and selenium in the deposition chamber 20c.

  The substrate Z transferred from the supply chamber 18 to the first film formation chamber 20a is sequentially transferred to the first film formation chamber 20a, the second film formation chamber 20b, and the third film formation chamber 20c, and one or more formation layers are transferred. The film chamber is formed by vacuum deposition in the film chamber, and is guided by the guide roller 46 to be carried in by the partition wall 50 separating the film formation zone 20 (third film formation chamber 20c) and the winding chamber 24. Then, it is conveyed to the winding chamber 24.

In the winding chamber 24, the substrate Z formed in the film forming zone 20 is wound around the winding shaft 14 to be rolled again.
In the illustrated example, the winding chamber 24 includes the above-described winding shaft 14, four guide rollers 54 a to 54 d, and a vacuum exhaust unit 56 that exhausts the winding chamber 24 to a predetermined pressure.
The film-formed substrate Z transported to the winding chamber 24 is sequentially guided to the guide rollers 54a to 54d, transported along a predetermined transport path, wound around the winding shaft 14, and again in a roll shape. To be.

In the measuring apparatus of the present invention, the flux to be measured is not particularly limited, and all the fluxes that can be measured by the atomic absorption method can be measured.
Here, the measuring apparatus of the present invention has a cylindrical portion disposed in the film forming chamber, and a mirror or a light source and a light receiver are movably disposed in the cylindrical portion so that the measuring light in the x direction can be moved. Change the flux passage position. Therefore, it can be particularly suitably used for measurement of highly straight atoms such as copper, indium, and gallium.

Hereinafter, the operation of the film forming apparatus 10 will be described.
When the substrate roll 12 is mounted on the rotating shaft 26, the substrate Z is pulled out from the substrate roll 12, and the guide rollers 28 a to 28 c in the supply chamber 18, the guide roller 38 in each film formation chamber in the film formation zone 20, and the final guide. The roller 46 and the guide rollers 54 a to 54 d in the winding chamber 24 are passed through a predetermined conveying path that reaches the winding shaft 14.
In the film formation zone 20, each evaporation source 36 in each film formation chamber is filled with a film formation material corresponding to the film to be formed.

When the substrate Z is inserted through the predetermined transport path and the filling of the film forming material is completed, the vacuum chamber 16 is closed, and the vacuum evacuation means 30, 42, and 56 are driven.
When the pressure in each chamber is stabilized and the temperature of each evaporation source is stabilized, the conveyance of the substrate Z is started, and when the conveyance speed of the substrate Z is stabilized, the deposition is performed in each deposition chamber of the deposition zone 20. The shutter of the source is opened and film formation on the substrate Z is started.
The substrate Z sent out from the substrate roll 12 is transferred from the supply chamber 18 to the film formation zone 20, heated in each film formation chamber by the heating means 38, and formed into a film by the evaporation source 36. It is conveyed, wound around the take-up shaft 14, and is again rolled.

Here, during the film formation on the substrate Z, the film forming apparatus 10 uses the measuring unit 70 to measure each film forming material in the x direction (direction perpendicular to the substrate transport direction (y direction) (width direction of the substrate Z) ) To measure the flux distribution. Further, as described above, each evaporation source 36 has a long rectangular shape extending in the x direction, and is configured to control heating in each region divided in the x direction.
In the film forming apparatus 10, the heating of the evaporation source 36 of each film forming material is controlled in accordance with the measured flux distribution in the x direction so that each film forming material forming the film has a predetermined ratio and amount. . Furthermore, according to the measured flux distribution in the x direction, the heating of each region in the x direction is controlled in each evaporation source 36 so that the film forming material becomes uniform in the x direction.
Therefore, according to the film forming apparatus 10 using the measuring means 70 of the present invention, a film with a proper amount ratio of components by each film forming material in the formed film and uniform in the x direction can be stably formed. To form a film.

  As mentioned above, although the vapor deposition flux measuring apparatus of this invention was demonstrated in detail, this invention is not limited to the above-mentioned example, You may perform various improvement and change in the range which does not deviate from the summary of this invention. Of course.

For example, in the illustrated example, the deposition flux measuring apparatus of the present invention is used in a roll-to-roll apparatus that performs film formation while transporting a long substrate Z in the longitudinal direction. However, the present invention is not limited to this, and can be suitably used for a film forming apparatus that forms a film while transporting a cut sheet substrate in a predetermined direction (y direction).
Further, the present invention is not limited to the measurement of the deposition flux in film formation by vapor deposition such as vacuum vapor deposition, and can also be used for film formation by sputtering.

  For example, it can be suitably used for management of a deposition rate (film formation rate) in film formation by vacuum deposition or the like, such as CIGS film formation used for solar cells.

DESCRIPTION OF SYMBOLS 10 Film-forming apparatus 12 Substrate roll 14 Winding shaft 16 Vacuum chamber 18 Supply chamber 20 Film-forming zone 20a 1st film-forming chamber 20b 2nd film-forming chamber 20c 3rd film-forming chamber 24 Wind-up chamber 26 Rotating shafts 28a-28c, 38, 46, 54a to 54d Guide rollers 30, 42, 56 Vacuum exhaust means 34, 48, 50 Partition 36 Evaporation source 40a, 40b Mask 70, 100, 110 (Vapor deposition flux) measuring device 72 Light source 74, 116 Light receiver 76 First 1 cylindrical portion 76a, 78a transmission window 78 second cylindrical portion 80a, 80b, 114 mirror 82 moving means 84a, 84b, 86a, 86b shielding plate 112 half mirror Z substrate

Claims (15)

A vapor deposition flux measuring device that measures a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction,
A light source that emits measurement light for measuring the deposition flux;
A light receiver that measures the amount of the measurement light that has passed through the measurement region of the deposition flux;
A measurement light transmission region extending in the x direction and extending in the x direction and spaced apart in the y direction, and is first hermetically separated from the film formation space by the vapor deposition. And a second tubular part,
In the first cylindrical part, the light source moving means for moving the light source in the x direction, and in the second cylindrical part, the light receiver is moved in the x direction in synchronization with the movement of the light source. A vapor deposition flux measuring apparatus comprising: a light receiver moving means. A vapor deposition flux measuring device that measures a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction,
A measurement light transmission region extending in the x direction and extending in the x direction and spaced apart in the y direction, and is first hermetically separated from the film formation space by the vapor deposition. And a second tubular part,
A light source that emits measurement light for measuring the vapor deposition flux so as to pass through the first cylindrical portion in the x direction;
A first mirror that reflects the measurement light emitted from the light source to the second cylindrical part in the first cylindrical part;
A second mirror that reflects the measurement light reflected by the first mirror in the x direction in the second cylindrical portion;
A light receiver that receives the measurement light reflected by the second mirror;
A vapor deposition flux measuring apparatus comprising: moving means for moving the first mirror and the second mirror synchronously. A vapor deposition flux measuring device that measures a vapor deposition flux in the x direction perpendicular to the y direction when forming a film on the substrate by vapor deposition while transporting the substrate in the y direction,
A measurement light transmission region extending in the x direction and extending in the x direction and spaced apart in the y direction, and is first hermetically separated from the film formation space by the vapor deposition. And a second tubular part,
A light source that emits measurement light for measuring the vapor deposition flux so as to pass through the first cylindrical portion in the x direction;
A plurality of first mirrors arranged in the y direction in the first cylindrical portion and reflecting the measurement light emitted from the light source to the second cylindrical portion;
A plurality of second mirrors arranged in the y direction and reflecting the measurement light reflected by the first mirror in the x direction in the second cylindrical portion;
A vapor deposition flux measurement apparatus comprising: a light receiver that receives the measurement light reflected by the second mirror.   The vapor deposition flux measuring apparatus according to claim 3, wherein the plurality of first mirrors are half mirrors. It said first cylindrical portion and the second cylindrical portion, the deposition flux measuring device according to any one of claims 1 to 4, through the vacuum chamber for forming a deposition space to the x-direction. Said first cylindrical portion and the second cylindrical portion, the deposition flux measuring device according to any one of claims 1 to 5, arranged under the mask for regulating the deposition region of the y-direction . It said first cylindrical portion and the second cylindrical portion, the deposition flux measuring apparatus according to any one of claims 1 to 5, also serves as a mask for regulating a film formation region of the y-direction. The said 1st cylindrical part and the 2nd cylindrical part have a flux shielding member which protrudes toward each cylindrical part extended in the x direction on both sides of the optical path of the said measurement light. The vapor deposition flux measuring apparatus according to any one of 1 to 7. The first cylindrical part and the second cylindrical part have a flux shielding member that protrudes toward the cylindrical part extending in the x direction across the optical path of the measurement light,
The flux shielding member, deposition flux measuring device according to any one of claims 1～5,7 also serves as a mask for regulating a film formation region of the y-direction. Deposition flux measuring device according to any one of claims 1-9 for measuring the y-direction of the flux at a plurality of locations of the x-direction. A film forming chamber for forming a film on the substrate by vapor deposition;
Vacuum vapor deposition apparatus having a deposition flux measuring device according to any one of claims 1 to 10 for measuring the deposition flux of the deposition chamber.   The vacuum deposition apparatus according to claim 11, wherein a measurement result of the deposition flux is fed back to control a distribution of the deposition flux in the x direction.   The vacuum deposition apparatus according to claim 11 or 12, wherein the film formation on the substrate is performed while the long substrate is transported with the longitudinal direction and the y direction being matched. By placing a plurality of film deposition source to the deposition chamber, a vacuum vapor deposition apparatus according to any one of claims 11 to 13 to form a film by vapor deposition. A plurality of deposition chambers, each deposition chamber, a vacuum vapor deposition apparatus according to any one of claims 11 to 14 for measuring a deposition flux in the x-direction.

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