TWM491672U - Electron beam evaporation apparatus - Google Patents

Description

Electron beam evaporation device

The utility model relates to an evaporation device using an electron beam.

The vapor deposition apparatus using an electron beam heats the material by irradiating the material in the crucible disposed in the vacuum chamber with electrons accelerated by a predetermined voltage, evaporates the material in the crucible, and attaches the evaporated material. A film is formed on the surface of the substrate which is disposed in the vacuum container as the member to be vapor-deposited.

Since the vapor deposition device can form a film at a high speed for a plurality of materials, it is suitable for various applications, and secondary electrons and reflected electrons generated by irradiating an electron beam to a material in the crucible are incident on the film formation portion, which may cause formation. The composition of the membrane changes. In particular, when the substrate is subjected to electron beam evaporation in the film formation step of the organic device, the composition of the surface of the organic film may be changed by the secondary electrons and the reflected electrons, and the characteristics of the organic device may be deteriorated.

In order to suppress secondary electrons and reflected electrons, for example, Patent Document 1 is known. Patent Document 1 discloses that a pair of electromagnets are opposed to each other in a space in which a substrate and a crucible face each other such that a direction of a magnetic field is lateral, and a probe is provided in the vicinity of the substrate, and the probe is observed to flow therethrough. The electronic current is adjusted for the excitation current of a pair of electromagnets.

However, in Patent Document 1, if the interference of the magnet with respect to the electron beam deflection magnetic field is considered, it is necessary to set a prescribed distance between the magnet and the electron beam in a manner that does not affect the deflection of the electron beam, and the magnet has to be placed close to it. The substrate, but since the magnetic field region is formed by a pair of magnets in the space opposite to the substrate and the substrate, the magnet itself becomes a mask, thereby limiting the vapor deposition range, and therefore the technique disclosed in Patent Document 1 It is difficult to apply to large glass substrates such as G2 to G4 sizes.

Further, even if secondary electrons and reflected electrons incident directly from the crucible to the substrate can be covered by the magnet, there are secondary electrons and reflected electrons deflected from the substrate direction due to the magnetic field region, which are wound by being reflected by the inner wall of the vacuum container or the like. There is a possibility of passing through the magnetic field region and reaching the substrate, so there is a problem that electrons incident on the film formation surface of the substrate cannot be completely covered by only a pair of magnets.

Prior technical literature

Patent Document 1: Japanese Patent Laid-Open Publication No. 5-156528

The technical problem to be solved by the present invention is that the magnet itself for forming a magnetic field region in the space between the substrate and the crucible becomes a mask, thereby limiting the range of vapor deposition and preventing secondary electrons and reflected electrons from entering the substrate. The effect is poor.

The present invention provides an electron beam evaporation apparatus which forms a magnetic field and which is heated by the accelerated electron irradiation so that the evaporated material adheres to the surface of the substrate, thereby forming a thin film which generates electrons The entrance of the substrate is shielded so that the storage container of the vapor deposition material is located below the substrate on which the vapor deposition is performed, and the upper space is located closer to the center of the substrate than the center of the storage container. A pair of magnets are disposed at a predetermined interval in the center of the storage container, and the pair of magnets are disposed such that the end portions on the substrate center side of the respective magnets are inclined downward from the other end portions.

In the electron beam vapor deposition apparatus of the present invention, the magnet is disposed so as to form an optimum magnetic field corresponding to the lower side of the substrate on which the vapor deposition material storage container is to be vapor-deposited, so that the magnet does not become a mask that hinders vapor deposition. Things.

Further, regarding the arrangement of the magnets, a pair of magnets are disposed at a predetermined interval by sandwiching the center of the storage container, and the pair of magnets are disposed such that the ends of the substrate center side of the respective magnets are closer to the other end portion than the other end portion When the magnet is tilted downward, the magnet does not become an obstacle to vapor deposition, and it is possible to prevent secondary electrons and reflected electrons generated by the electron beam irradiated toward the storage container from directly entering the film formation portion of the substrate.

In the electron beam evaporation apparatus, a grounded electronic mask is provided around the storage container. When a grounded electronic mask is provided in the vicinity of the storage container and does not become a vapor deposition mask, secondary electrons and reflected electrons can flow to the ground through the inner wall or the like, thereby suppressing secondary electrons. And reflected electrons are incident on the substrate film forming portion.

Further, in the electron beam evaporation apparatus, the electron beam evaporation apparatus includes: a container elevating mechanism that changes a height from a vapor deposition surface of the substrate to a storage container of the storage container; and a magnet lifting mechanism that changes a height of the inclined upper end of the magnet at a height of the storage container; a magnet tilt changing mechanism to change an inclination angle of the magnet; a moving mechanism between the magnets to change an interval between the pair of magnets; and a control portion based on evaporation Controlling the storage container elevating mechanism, the magnet lifting mechanism, and the magnet tilt changing mechanism by a material type, a substrate shape, and an amount of electrons measured by an electronic measuring device disposed at a relative position of a diameter of a rotation locus of the substrate And the action of the inter-magnet moving mechanism. Since the electron beam evaporation apparatus has the structure, the magnet can be disposed on the basis of the type of the evaporation material, the shape of the substrate, and the amount of electrons measured by the electronic measuring device disposed at the relative position of the diameter of the rotation track outside the substrate. The best location.

According to the present invention, it is possible to suppress a decrease in characteristics of an organic device caused by a change in composition of an organic thin film, and incident electrons and secondary electrons generated during electron beam evaporation are incident on the surface of the organic thin film formed before electron beam evaporation. The composition change of the organic thin film is generated, and the evaporation range which has been hindered by the permanent magnet can be expanded to the entire area of the substrate of the G4 substrate size, and in addition, the organic device formed by resistance heating evaporation can be obtained in principle. With the same characteristics, the resistance heating type vapor deposition does not generate secondary electrons and reflected electrons, and does not cause deterioration in characteristics due to the secondary electrons and reflected electrons. Further, it is faster than the case of the resistance heating type. The use of an electron beam evaporation apparatus which is easy to use a film becomes possible.

Further, when an electromagnet is used as a magnet for performing an electronic mask, the present invention does not require changing a magnet according to a material for vapor deposition using a permanent magnet. The magnetic field adjustment is performed by stopping the apparatus at the time of the interval, and when a plurality of materials are continuously vapor-deposited, a suitable magnetic field for the electronic mask can be formed and a uniform film thickness distribution can be obtained, and the film can be formed at a high speed.

1‧‧‧Substrate

2‧‧‧坩埚

3‧‧‧Electronic gun

4‧‧‧ magnet

10‧‧‧Control Department

21‧‧‧坩埚 lifting mechanism

41‧‧‧Magnetic lifting mechanism

42‧‧‧Magnetic tilt change mechanism

43‧‧‧Magnet moving mechanism

45‧‧‧Electronic measuring device

4A‧‧‧ Magnet

4B‧‧‧ Magnet

P‧‧‧ virtual line

P'‧‧‧ virtual line

Distance from the centre of Y‧‧‧

H‧‧‧ Height

H'‧‧‧ Height of the upper side

Distance in the direction of R‧‧‧

C‧‧‧Change distance

5‧‧‧Electronic mask

5A‧‧‧Electronic mask

5B‧‧‧Electronic mask

5C‧‧‧Electronic mask

5D‧‧‧Electronic mask

5E‧‧‧Electronic mask

Fig. 1 is a view showing a schematic configuration of an electron beam evaporation apparatus of the present invention.

2(a) and 2(b) are views showing an optimum arrangement of magnets of the electron beam evaporation apparatus of the present invention.

3(a) and 3(b) are views showing the arrangement relationship between the magnet and the storage container of the electron beam vapor deposition device of the present invention with respect to the substrate.

4 is a view showing the arrangement of an electronic mask of the electron beam evaporation apparatus of the present invention.

Fig. 5 is a view for explaining the amount of influence of a magnetic field on a vapor deposition rate.

Fig. 6 is a view showing the position in the vapor deposition range of the organic EL element in an experiment conducted to confirm the effects of the present invention.

In the present invention, the object of suppressing the incidence of secondary electrons and reflected electrons on the substrate and the fact that the magnet itself becomes a mask and impeding vapor deposition can be achieved by: arranging the storage container of the vapor deposition material at the vapor deposition In the upper space of the substrate, a pair of magnets are disposed at a predetermined interval from the center of the storage container in a space above the center of the storage container, and the pair of magnets are disposed at the center of the substrate of each magnet. The side end is inclined downward from the other end.

[Examples]

Hereinafter, the mode for carrying out the present invention will be described in detail with reference to the accompanying drawings.

In the drawings, only the main features of the electron beam vapor deposition device of the present invention are shown. In the following description, members that are not shown are not given reference numerals.

The electron beam evaporation apparatus of this example is disposed such that a rectangular substrate 1 having a film formed on the surface thereof is disposed above the inside of the vacuum container, and while rotating the center of the surface of the substrate 1 Perform evaporation.

The substrate 1 is used for a substrate such as a G4 size, and is used for a so-called organic device which is an organic EL illumination composed of an organic film and a metal or a transparent electrode, an organic EL display, an organic TFT, an organic solar battery, or the like.

坩埚2 is a storage container in which a vapor deposition material (hereinafter referred to as a material) is placed. The crucible 2 is disposed at the end of the substrate, and is disposed below the circular orbit of the rectangular substrate 1 in this example.

In this example, the height of the crucible 2 and the distance from the vapor deposition surface of the substrate 1 can be changed by the crucible lifting mechanism 21 (the height H to be described later: see FIG. 3). The 坩埚 2 sometimes employs a so-called turntable method that switches between a plurality of materials, for example, at one evaporation source position. At this time, since each material has a unique vapor deposition profile, the uniformity of the film thickness is maintained by the crucible lifting mechanism 21 as described above by changing the height H of the crucible according to the material used in the vapor deposition source.

Further, the reason why the crucible is not adjusted so as to move the distance from the central axis of the substrate 1 is as follows: in the turret method in which a plurality of materials are vapor-deposited as described above, it is difficult to move the crucible 2 and the crucible center in the level direction. The distance R on.

The forward path of the electrons irradiated from the electron gun 3 as the electron beam source is deflected by the magnet and the electrons are guided to the crucible 2, and the material loaded in the crucible 2 is heated and evaporated by the collision of the electrons reaching the crucible 2. The illustration and description of the structure of the electron beam forward path deflecting magnet are omitted.

Regarding the electron beam source, in this example, since the amount of X-rays depending on the acceleration voltage is lowered, adjustment of a low acceleration voltage (for example, -6 kV or more) can be performed. In the vapor deposition of the organic device to be vapor-deposited, vapor deposition is performed at an acceleration voltage of -2 kV or more.

For example, a magnet 4 (4A, 4B) such as a neodymium magnet or a samarium-cobalt magnet is used to deflect secondary electrons and reflected electrons generated after irradiation of the material in the crucible 2, in this example, as shown in FIG. (a), in the space in the direction of the substrate 1 of the crucible 2, the center of the crucible 2 is interposed, and a predetermined direction is defined from the center toward the direction away from each other. The magnets 4 (4A, 4B) are arranged in such a manner that the N poles and the S poles are opposed at equal intervals, and one end is inclined with respect to the other end.

As shown in FIG. 2(b), the arrangement of the N pole and the S pole of the magnet 4 is such that the center is oriented toward the center of the substrate 1, and the right side is the N pole and the left side is the S pole. In the present embodiment, the magnet 4A is referred to as an S pole, and the magnet 4B is referred to as an N pole, and the direction of the magnetic field is a direction from the magnet 4B toward the magnet 4A. At this time, if electrons generated by the electron beam evaporation apparatus enter the magnetic field in the magnet 4A and the magnet 4B, the electrons are guided to the outside of the substrate 1 (in contrast, if the magnet 4A is taken as the N pole and the magnet 4B is taken as the S pole, then The electrons are guided to the substrate side).

In this example, as shown in FIG. 1, the magnets 4 (4A, 4B) can change the height H' of the surface on the upper side of the crucible 2 to be described later by the magnet elevating mechanism 41, and the magnet 4 to be described later can be changed by the magnet tilt changing mechanism 42. The angle of the inclination θ is changed, and the distance C between the magnet 4A and the magnet 4B sandwiching the 坩埚 2 described later can be changed by the inter-magnet moving mechanism 43.

Further, as described above, the crucible 2 changes the height of the crucible 2 and the distance from the vapor deposition surface of the substrate 1 (the height H to be described later) by the crucible lifting mechanism 21, but does not change the distance R in the horizontal direction. Here, in this example, depending on the material used, in order to change the vapor deposition distribution with respect to the substrate 1, it is necessary to change the height H of the crucible 2, but sometimes the magnet 4 cannot completely cover the evaporation range and the electronic mask becomes Difficult, or sometimes the magnet 4 itself interferes with evaporation.

Therefore, in this example, as shown in FIG. 1, the amount of electrons reaching the substrate 1 is monitored by the electronic measuring device 45 provided at the relative position of the diameter of the rotation locus of the substrate 1, so as to become a magnet arrangement condition to be described later. The height H' of the magnet 4 is changed by the magnet lifting mechanism 41, the inclination θ is changed by the magnet tilt changing mechanism 42, and the distance C is changed by the inter-magnet moving mechanism 43.

In the control unit 10, the electron beam vapor deposition apparatus of the present invention controls the crucible lifting mechanism 21 and the magnet based on the type of the vapor deposition material input from the input unit (not shown) and the shape of the substrate 1 (length × width of the substrate 1). Lifting mechanism 41, magnet tilt changing mechanism 42 The initial operation of the moving mechanism 43 between the magnets and the magnets is started, and the output from the electronic measuring unit 45 is transmitted to the control unit 10 to perform linear control.

As shown in FIG. 4, the electronic mask 5 is for preventing reflected electrons and secondary electrons from reaching the substrate 1. Due to the magnetic field of the magnet 4, electrons of the electron beam between the magnet 4A and the magnet 4B are masked there, but electrons of the electron beam sometimes pass under the magnet 4, and electrons bent by the magnetic field are incident on the substrate 1 . Further, electrons that fly outside the substrate 1 and are reflected in the vacuum container sometimes reach the substrate 1.

Therefore, in this example, the electronic mask 5 is provided under the magnetic field at the position where the magnets 4 and 坩埚2 are located to surround the 坩埚2. The electronic mask 5 is grounded, and is disposed around the crucible 2 in the center direction of the substrate 1 (to be the front), the outer direction of the circular locus (to be the rear), and the separation width direction of the magnet 4A and the magnet 4B (will This is the side) and the direction of the substrate 1 seen from 坩埚2 (which is taken as the upper side).

Specifically, in this example, the electronic mask 5 is disposed in the manner shown in FIG. The front electronic mask 5A is disposed between the lower end and the lower end of the magnet 4A and the magnet 4B in a gapless manner, and the upper electronic mask 5B is disposed in a manner of no gap between the magnet 4A and the magnet 4B. Between the upper end and the upper end, the side electronic mask panels 5C and 5D are disposed on the outer side portions of the magnet 4A and the magnet 4B with no gap, and the electronic mask panel 5E is disposed in a manner without a gap. At the rear of 2, a casing is formed by the electronic mask 5, and the casing covers the crucible 2 in which the interval between the magnet 4A and the magnet 4B is opened.

Further, when the arrangement of the crucible 2 and the magnet 4 is changed by the respective mechanisms of the crucible elevating mechanism 21, the magnet elevating mechanism 41, the magnet tilt changing mechanism 42, and the inter-magnet moving mechanism 43 in the above manner, sometimes the gap can be set without a gap. The electronic mask 5, but when the electronic mask can be sufficiently performed by the magnet 4, there may be a gap between the 行程2 and the moving stroke portion of the magnet 4.

Since the electronic mask 5 is provided in the manner described, it is possible to mask the reflected electrons, and the electrons flying in other directions are also enclosed in the closed box by the electronic mask 5. In the space and finally to the earth, it is possible to very effectively prevent electrons from reaching the evaporation range of the substrate 1.

Next, the arrangement of the magnet 4A and the magnet 4B based on the positions of the substrate 1 and the crucible 2 will be specifically described with reference to FIGS. 2 and 3. Further, the arrangement condition of the magnet 4 described below is also a condition in which the electron mask effect is an optimum magnetic field generation range.

Further, an object of the present invention is to adjust the output of the magnetic field in the case where the magnet 4 is used as an electromagnet in order to perform the electronic mask, and to pass the magnetic field generation output of the magnet 4 during the vapor deposition. By setting the arrangement of the magnets 4 to an appropriate condition, it is possible to realize an electronic mask and a uniform and high-speed film formation.

The effect of magnetic field on the electron beam

When the magnetic field of the magnet 4 for the purpose of the electronic mask reaches the electron beam orbit, the deflection and convergence of the electron beam are affected, resulting in a failure to concentrate the electron beam irradiation on the material, thereby causing a decrease in the vapor deposition rate. When observing FIG. 5, it can be understood that when the magnetic flux density on the electron beam orbit is 0.5 mT, the vapor deposition rate is decreased by 10%. In the present embodiment, the magnet is configured such that the magnetic field formed for the purpose of the electronic mask is The magnetic flux density on the electron beam orbit does not become 0.5 mT or more.

Magnet configuration

Basically, according to the vapor deposition material and the vapor deposition area of the substrate, for example, the magnetic field generation output of the magnet 4 and the output of the electron beam can be adjusted, thereby being able to cope with any situation, but in this example, not by the electrical control described above. In order to cope with this, an object of this example is to find an "optimal arrangement condition of the magnet 4 corresponding to the vapor deposition area of the substrate 1 in the case where the magnetic field generation output of the magnet 4 is fixed, which is matched with the film formation conditions."

As described above, the crucible 2 is located below the substrate 1. Since each of the vapor deposition materials has a unique vapor deposition profile, the distance between the lower surface (film formation portion) of the substrate 1 and the upper surface of the crucible 2 is changed to a height at which a predetermined film thickness uniformity can be obtained. . Further, in this example, the amount of electrons reaching the substrate 1 is measured using the output of the electronic measuring device 45, according to the lower surface (film forming portion) of the substrate 1 and the crucible 2 The distance determines the configuration of the magnet. Next, each arrangement of the magnets 4 is determined based on the position of the crucible 2 with respect to the substrate 1.

As shown in FIG. 3, as for the magnet 4, the height H' of the surface from the upper side of the crucible 2, the length B of the magnet 4, the inclination θ of the magnet 4, and the distance C between the magnet 4A and the magnet 4B are as follows. Just fine.

Height H': 200mm Height H' 400mm

The height H' (distance) of the upper end of the end portion of the substrate 1 from the upper surface of the crucible 2 to the magnet 4 of the inclined arrangement 4 is 200 mm. Height H' 400mm can be. If the height of the upper end of the magnet 4 is less than 200 mm (close to 坩埚2), the deflection and convergence of the electron beam to the evaporation source may be disturbed, and the material may not be efficiently heated, resulting in a decrease in film formation speed. On the other hand, if the height of the upper end of the magnet 4 is higher than 400 mm (away from the crucible 2), it becomes a vapor-deposited mask.

Length B

The length B of the magnet 4 is set to be longer than the range (dotted line) drawn by the imaginary line connecting the substrate 1 on the same plane perpendicular to the substrate 1 and the range (dotted line) drawn by the imaginary lines P and P' at the center of the 坩埚2. . The length B of the magnet 4 changes the rotational diameter of the substrate 1, the height of the crucible 2 with respect to the substrate 1, the height H' of the magnet 4, and the inclination θ described later as a factor, and conversely, if the magnet 4 is even When the length B is fixed while the main factor is also in a range that can be coped with, the length B of the magnet 4 may also be a fixed length.

Magnet inclination θ: 5° Magnet tilt θ 45°

The magnet 4 is disposed such that the electron beam is not affected, and the lower end surface A of the magnet 4 which is inclined downward does not exceed the range of the center of rotation of the substrate 1, and is located substantially at the center of the connection 坩埚2 in the vertical plane and the rotation of the substrate 1. The diameter of the track is at the farthest point on the virtual line P'. On the other hand, the inclined upper end surface of the magnet 4 is defined by the height H'. Therefore, in accordance with the length B of the magnet 4, the inclination θ of the magnet 4 inclined so that the upper end surface of the magnet 4 is the height H' and the lower end surface is the predetermined position of the imaginary line P' is substantially 5°. Magnet tilt θ 45°.

If the inclination θ is less than 5°, the magnet 4 becomes a vapor-deposited mask of the substrate 1 and, for example, when other vapor deposition sources or mechanisms are provided on the opposite side with respect to the center of the substrate 1, as a mask or interference thereof The possibility that the substance is a factor that hinders the vapor deposition increases. On the other hand, if the inclination θ is larger than 45°, the range of the virtual line P-P′ cannot be covered with the magnet, and the electron passes outside the magnetic field forming region required for the deflection of the reflected electron or the secondary electron and reaches the substrate 1 , or When the electron beam advances from the front direction, the possibility that the electronic mask interferes with the electron beam trajectory increases.

Distance C: 100mm High distance C 400mm

The interval between the magnet 4A and the magnet 4B sandwiching the crucible 2 is shorter than 100 mm, and the magnet 4 is a vapor-deposited mask. On the other hand, if the interval between the magnet 4A and the magnet 4B sandwiching the crucible 2 is longer than 400 mm, it is difficult to form a magnetic field required for the electronic mask, or there is a mask which becomes another vapor deposition source in the vacuum container or The possibility of interference from other agencies.

Next, the results of an experiment conducted to confirm the effects of the present invention in the following configuration that satisfies the above-described arrangement conditions of the magnet 4 are shown. First, as a basic requirement, the acceleration voltage of the electron beam is -2 kV or less, for example, -2 kV, and the magnetic flux density between the magnet 4A of the magnet 4 and the magnet 4B is 5 mT or more, for example, 5 mT by the permanent magnet.

Further, the distance R of the crucible 2 in the horizontal direction is configured such that when the substrate is rotated, the crucible center is located at a position more than 0.5 times the radius D of the rotational locus, for example, the center of the crucible is located at a position twice the radius D of the rotational locus. That is, it is located directly below the rotation track.

The relationship between the distance H from the vapor deposition surface of the substrate 1 to the center of the crucible 2 and the height H' of the magnet 4 is of course the height H' of the magnet 4, the distance H, which fits from the center of the crucible 2 to the center of the substrate 1. The distance Y is 1500 mm or less, and finally the distance H from the vapor deposition surface of the substrate 1 to the center of the crucible 2 is determined.

The distance R from the vapor deposition surface of the substrate 1 to the center of the crucible 2 and the distance R of the crucible 2 in the horizontal direction are not particularly limited as long as the target film thickness can be made uniform, but since When the distance Y from the center of the center 2 to the center of the substrate 1 is longer than 1500 mm, the vapor deposition rate is lowered. Therefore, 1500 mm capable of obtaining a vapor deposition rate of 10/s or more is set as the upper limit of the distance Y from the center of the crucible 2 to the center of the substrate 1.

Next, the results of experiments conducted to confirm the effects of the present invention are shown. The experiment was carried out by evaluating an organic EL device produced under the following conditions.

In the center of the vapor deposition range of 370 mm × 470 mm, 550 mm × 650 mm (the distance from the center of the substrate is 0 mm) and the end portion (the distance from the center of the substrate is 250 mm and 375 mm), the length is 50 mm square. On the glass substrate, ITO was formed by patterning, and the organic thin film was vapor-deposited, and then aluminum was electron-deposited at a vapor deposition rate of 10/s and a film thickness of 2000 using a vapor deposition mask as a member having a square side of 2 mm square. The vapor deposition was carried out to prepare an organic EL device for evaluation. In the following, as shown in FIG. 6 , the organic EL element produced in the center of the vapor deposition range is referred to as a “central element”, and the organic EL element fabricated at the end is referred to as an “end element”.

In the following Table 1, the amount of electrons incident on the substrate 1 is vapor-deposited so that the height H', the length B, the inclination θ, and the interval C of the magnet 4 are in accordance with the description of Table 1 which meets the above conditions. The results of (current density) and luminous efficiency were evaluated. On the other hand, Table 2 below shows the results of vapor deposition under the conditions that do not satisfy the above conditions or under conditions other than the above conditions.

When the composition of the organic thin film layer formed first by the secondary electrons or the reflected electrons changes during the electron beam evaporation, the luminous efficiency is lowered (the composition change of the organic thin film and the deterioration of the device characteristics due to the absence of X-rays are confirmed. The voltage was evaluated). Therefore, for reference, the influence of the amount of secondary electrons and reflected electrons was evaluated by comparison with the luminous efficiency of an element fabricated by a resistance heating method in which secondary electrons and reflected electrons were not generated.

In the case where the configuration of the magnet 4 is not satisfied, etc. (Table 2), in particular, the magnet 4 is arranged in a level, and the inclination θ is 0° (that is, not inclined) or exceeds the upper limit of the range. The magnet itself becomes a vapor-deposited mask, or cannot cover secondary electrons and reflected electrons, causing secondary electrons and reflected electrons to reach the substrate 1, and thus the characteristics of the element are degraded.

In the case of the configuration of the present example which satisfies the arrangement condition of the magnet 4 (Table 1), it is confirmed that the luminous efficiency equivalent to the element obtained by vapor-depositing aluminum by the resistance heating method can be obtained: this example can prevent secondary electrons And reflected electrons are incident on the evaporation range, and the entire area of the evaporation range for the substrate 1 is also the central element and the end The components are capable of masking the amount of electrons that cause composition changes or the like in the organic film. In addition, it was confirmed that the electronic mask can be more efficiently performed by combining the electronic masks.

In the above embodiment, vapor deposition is performed so that the substrate is rotated, but the substrate may be fixed or transported to the substrate. The rotation trajectory when the substrate or the vapor deposition opening portion is rotated may be drawn, and the magnet arrangement at this time may be determined based on the rotation trajectory.

1‧‧‧Substrate

2‧‧‧坩埚

3‧‧‧Electronic gun

4‧‧‧ magnet

10‧‧‧Control Department

21‧‧‧坩埚 lifting mechanism

41‧‧‧Magnetic lifting mechanism

42‧‧‧Magnetic tilt change mechanism

43‧‧‧Magnet moving mechanism

45‧‧‧Electronic measuring device

Claims (3)

An electron beam evaporation apparatus which forms a magnetic field and which is heated by the accelerated electron irradiation so that the evaporated material adheres to the surface of the substrate, thereby forming a thin film which is incident on the generated electrons toward the substrate In the electron beam vapor deposition apparatus, the storage container of the vapor deposition material is positioned below the substrate on which vapor deposition is performed, and is closer to the center of the substrate than the center of the storage container. In the upper space, a pair of magnets are disposed at a predetermined interval from the center of the storage container, and the pair of magnets are disposed such that the end portions on the substrate center side of the respective magnets are inclined downward from the other end portions. The electron beam evaporation apparatus according to claim 1, wherein a grounded electronic mask is provided around the storage container. The electron beam evaporation apparatus according to claim 1 or 2, wherein the electron beam evaporation apparatus includes: a storage container elevating mechanism that changes a height from a vapor deposition surface of the substrate to a storage container of the storage container; a magnet lifting mechanism that changes a height of an inclined upper end of the magnet at a height of the receiving container; a magnet tilt changing mechanism that changes an inclination angle of the magnet; a magnet moving mechanism that changes an interval of the pair of magnets; and a control Controlling the storage container lifting mechanism, the magnet lifting mechanism, and the portion based on the type of the vapor deposition material, the shape of the substrate, and the amount of electrons measured by the electronic measuring device disposed at a relative position of the diameter of the rotating track of the substrate The operation of the magnet tilt changing mechanism and the inter-magnet moving mechanism.